CN103117040B - Image element circuit, display device and display drive method - Google Patents
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Abstract
本申请公开了一种像素电路、显示装置及显示驱动方法,通过电流偏置方式提取第二晶体管的第一阈值电压信息及发光元件的第二阈值电压信息,并连同像素的灰度信息一起作为第一电容的基准电压,从而在发光阶段,使通过发光元件的驱动电流与上述第一阈值电压信息及第二阈值电压信息无关,精确补偿了TFT器件及OLED的阈值电压漂移或显示面板各处TFT器件阈值电压的不均匀性,通过电压编程方式将灰度信息存储至第一电容,实现了快速的数据输入,并且,简单的电路结构增加了像素的开口率和显示装置的成品率,降低了生产成本。
The present application discloses a pixel circuit, a display device, and a display driving method. The first threshold voltage information of the second transistor and the second threshold voltage information of the light-emitting element are extracted by means of current bias, and used together with the grayscale information of the pixel as The reference voltage of the first capacitor, so that in the light-emitting stage, the driving current passing through the light-emitting element has nothing to do with the above-mentioned first threshold voltage information and second threshold voltage information, and accurately compensates the threshold voltage drift of TFT devices and OLEDs or various parts of the display panel. The non-uniformity of the threshold voltage of the TFT device stores the grayscale information to the first capacitor through voltage programming, which realizes fast data input, and the simple circuit structure increases the aperture ratio of the pixel and the yield of the display device, reducing the production cost.
Description
技术领域technical field
本申请涉及显示器件技术领域,尤其涉及一种像素电路、显示装置及显示驱动方法。The present application relates to the technical field of display devices, in particular to a pixel circuit, a display device and a display driving method.
背景技术Background technique
有机发光二极管(OrganicLight-EmittingDiode,OLED)显示因具有高亮度、高发光效率、宽视角和低功耗等优点,近年来被人们广泛研究,并迅速应用到新一代的显示当中。OLED显示的驱动方式可以为无源矩阵驱动(PassiveMatrixOLED,PMOLED)和有源矩阵驱动(ActiveMatrixOLED,AMOLED)两种。无源矩阵驱动虽然成本低廉,但是存在交叉串扰现象不能实现高分辨率的显示,且无源矩阵驱动电流大,降低了OLED的使用寿命。相比之下,有源矩阵驱动方式在每个像素上设置数目不同的晶体管作为电流源,避免了交叉串扰,所需的驱动电流较小,功耗较低,使OLED的寿命增加,可以实现高分辨的显示。Organic Light-Emitting Diode (OLED) display has been widely studied in recent years due to its advantages of high brightness, high luminous efficiency, wide viewing angle and low power consumption, and has been rapidly applied to a new generation of displays. OLED display can be driven in two ways: passive matrix drive (PassiveMatrixOLED, PMOLED) and active matrix drive (ActiveMatrixOLED, AMOLED). Although the cost of passive matrix driving is low, it cannot realize high-resolution display due to crosstalk phenomenon, and the passive matrix driving current is large, which reduces the service life of OLED. In contrast, the active matrix driving method sets a different number of transistors on each pixel as a current source, which avoids crosstalk, requires less driving current, and lower power consumption, which increases the life of the OLED and can achieve High resolution display.
传统AMOLED的像素电路是简单的两薄膜场效应晶体管(ThinFilmTransistor,TFT)结构,如图1所示,该像素电路10包括开关晶体管13、电容16、驱动晶体管14和发光件OLED15。开关晶体管13响应来自扫描控制线SCAN12的控制信号采样来自数据线DATA11的数据信号。电容16在开关晶体管13关断后保存所采样的数据信号电压。驱动晶体管14在给定的发光期间根据电容16所保留的输入电压来供应输出电流。发光件OLED15通过来自驱动晶体管14的输出电流来发出其亮度与数据信号相称的光。根据晶体管的电压电流公式,驱动晶体管14流过的电流可以表示为:The pixel circuit of a traditional AMOLED is a simple two Thin Film Transistor (TFT) structure. As shown in FIG. The switching transistor 13 samples the data signal from the data line DATA11 in response to the control signal from the scan control line SCAN12. The capacitor 16 stores the sampled data signal voltage after the switching transistor 13 is turned off. The driving transistor 14 supplies an output current according to the input voltage held by the capacitor 16 during a given light emitting period. The light emitting element OLED15 emits light whose brightness is commensurate with the data signal by the output current from the driving transistor 14 . According to the voltage-current formula of the transistor, the current flowing through the driving transistor 14 can be expressed as:
IDS=1/2μnCoxW/L(VG-VOLED-VTH)2……(1)I DS =1/2μ n C ox W/L(V G -V OLED -V TH ) 2 ……(1)
其中,IDS为驱动晶体管14的漏极流向源极的漏极电流,μn为TFT器件的有效迁移率,Cox为TFT器件单位面积的栅电容,W、L分别为TFT器件的有效沟道宽度和沟道长度,VG为TFT器件的栅极电压,VOLED是OLED15上的偏置电压,VTH为TFT器件的阈值电压,VOLED与OLED15的阈值电压相关。Among them, I DS is the drain current flowing from the drain to the source of the driving transistor 14, μ n is the effective mobility of the TFT device, C ox is the gate capacitance per unit area of the TFT device, W and L are the effective channel of the TFT device respectively channel width and channel length, V G is the gate voltage of the TFT device, V OLED is the bias voltage on the OLED15, V TH is the threshold voltage of the TFT device, and V OLED is related to the threshold voltage of the OLED15.
这种电路虽然结构简单,但是不能补偿驱动晶体管14阈值电压VTH漂移、OLED15阈值电压漂移或因TFT器件采用多晶硅材料制成而导致面板各处TFT器件的阈值电压VTH不均匀性。当驱动晶体管14阈值电压VTH、OLED15阈值电压发生漂移或在面板上各处VTH的值不一致时,根据公式(1)驱动电流IDS就会改变,并且面板上不同的像素因偏置电压的不同漂移情况也不一样,这样就会造成面板显示的不均匀性。Although this kind of circuit has a simple structure, it cannot compensate the drift of the threshold voltage V TH of the driving transistor 14, the drift of the threshold voltage of the OLED 15, or the non-uniformity of the threshold voltage V TH of the TFT devices at various parts of the panel caused by the TFT devices made of polysilicon material. When the threshold voltage V TH of the driving transistor 14 and the threshold voltage of the OLED 15 drift or the values of V TH on the panel are inconsistent, the driving current I DS will change according to the formula (1), and different pixels on the panel will be affected by the bias voltage The different drift conditions are also different, which will cause the unevenness of the panel display.
因此,就目前来说,为了解决TFT器件的VTH漂移带来的问题,不管AMOLED的像素电路采用的工艺是多晶硅(poly-Si)技术、非晶硅(a-Si)技术还是氧化物半导体技术,其在构成像素电路时都需要提供阈值电压VTH补偿机制。目前出现了很多提供补偿的像素电路,这些电路大致可以分为两类:电压驱动型像素电路和电流驱动型像素电路。电流驱动型像素电路主要采用电流镜或者电流源将数据电流按一定比例复制为驱动电流的方式来点亮发光件。由于OLED是电流型器件,因此采用电流驱动型电路可以很精确的补偿阈值电压的漂移和迁移率的不同。但是在实际应用时,由于数据线上的寄生电容效应,数据电流的建立需要较长的时间,这个问题在小电流的情况下更加突出,严重影响了电路的驱动速度。电压驱动型像素电路相对于电流驱动型像素电路有很快的充放电速度,可以满足大面积、高分辨显示的需要。但是,许多电压驱动型像素电路在补偿阈值电压VTH的漂移时,需要复杂的电路结构且引入了多条扫描线,这使得像素的开口率降低且对外部的栅极驱动IC要求较高,并且增加了线路成本。Therefore, for now, in order to solve the problems caused by the V TH drift of TFT devices, regardless of whether the AMOLED pixel circuit adopts polysilicon (poly-Si) technology, amorphous silicon (a-Si) technology or oxide semiconductor technology technology, it is necessary to provide a threshold voltage V TH compensation mechanism when forming a pixel circuit. At present, there are many pixel circuits that provide compensation, and these circuits can be roughly divided into two categories: voltage-driven pixel circuits and current-driven pixel circuits. The current-driven pixel circuit mainly uses a current mirror or a current source to copy the data current as a driving current in a certain proportion to light up the light-emitting element. Since the OLED is a current-mode device, the drift of the threshold voltage and the difference in mobility can be compensated precisely by using a current-driven circuit. However, in practical applications, due to the parasitic capacitance effect on the data line, it takes a long time to establish the data current. This problem is more prominent in the case of low current, which seriously affects the driving speed of the circuit. Compared with the current-driven pixel circuit, the voltage-driven pixel circuit has a faster charging and discharging speed, which can meet the needs of large-area and high-resolution display. However, many voltage-driven pixel circuits require a complex circuit structure and introduce multiple scanning lines when compensating for the drift of the threshold voltage VTH , which reduces the aperture ratio of the pixel and requires higher external gate driver ICs. And increased line costs.
考虑以上因素,一个既能如电流型电路一样精确补偿TFT器件或OLED的阈值电压漂移或显示面板各处TFT器件阈值电压的不均匀性,又可以和电压型驱动电路一样实现快速的数据输入,且电路结构简单,使用器件数目少的像素驱动电路将会有很明显的优势。Considering the above factors, one can accurately compensate the threshold voltage drift of TFT devices or OLEDs or the non-uniformity of threshold voltages of TFT devices around the display panel like a current-type circuit, and can achieve fast data input like a voltage-type drive circuit. Moreover, the circuit structure is simple, and the use of a pixel driving circuit with a small number of components will have obvious advantages.
发明内容Contents of the invention
本申请提供一种像素电路、显示装置及显示驱动方法,能精确补偿TFT器件及OLED的阈值电压漂移或显示面板各处TFT器件阈值电压的不均匀性,并且实现快速的数据输入,且电路结构简单,增加像素的开口率和显示装置的成品率,降低生产成本。The present application provides a pixel circuit, a display device and a display driving method, which can accurately compensate the threshold voltage drift of TFT devices and OLEDs or the non-uniformity of the threshold voltages of TFT devices in various parts of the display panel, and realize fast data input, and the circuit structure The invention is simple, increases the aperture ratio of the pixel and the yield of the display device, and reduces the production cost.
根据本申请的第一方面,本申请提供一种像素电路,包括:According to the first aspect of the present application, the present application provides a pixel circuit, comprising:
发光元件;light emitting element;
第二晶体管,其第三电极用于连接到一偏置电流线,第四电极连接到所述发光元件,用于为所述发光元件提供驱动电流;a second transistor, the third electrode of which is used to be connected to a bias current line, and the fourth electrode is connected to the light emitting element, and is used to provide a driving current for the light emitting element;
第一电容,其第一端连接到所述第二晶体管的第二控制极,第二端连接到用于提供像素灰度信息的数据线,用于为所述第二晶体管提供基准电压;A first capacitor, the first end of which is connected to the second control electrode of the second transistor, and the second end is connected to a data line for providing pixel grayscale information, and is used for providing a reference voltage for the second transistor;
第一晶体管,其第一电极用于连接到所述偏置电流线,第二电极连接到所述第二控制极,第一控制极用于连接到一提供扫描信号的扫描线,用于在所述扫描信号的控制下导通,使得所述第二晶体管导通以使第一电容提供的基准电压包含第二晶体管的第一阈值电压信息、发光元件的第二阈值电压信息和灰度信息。A first transistor, the first electrode of which is used to be connected to the bias current line, the second electrode is connected to the second control electrode, and the first control electrode is used to be connected to a scan line for providing a scan signal, for use in Turning on under the control of the scanning signal, so that the second transistor is turned on so that the reference voltage provided by the first capacitor includes the first threshold voltage information of the second transistor, the second threshold voltage information and grayscale information of the light-emitting element .
根据本申请的第二方面,本申请提供一种像素电路,包括:According to the second aspect of the present application, the present application provides a pixel circuit, comprising:
发光元件;light emitting element;
第二晶体管,其第三电极用于连接到一偏置电流线,第四电极连接到所述发光元件,用于为所述发光元件提供驱动电流;a second transistor, the third electrode of which is used to be connected to a bias current line, and the fourth electrode is connected to the light emitting element, and is used to provide a driving current for the light emitting element;
第一电容,其第一端连接到所述第二晶体管的第二控制极,第二端连接到一公共节点,用于为所述第二晶体管提供基准电压;a first capacitor, the first end of which is connected to the second control electrode of the second transistor, and the second end is connected to a common node, for providing a reference voltage for the second transistor;
第一晶体管,其第一电极用于连接到所述偏置电流线,第二电极连接到所述第二控制极,第一控制极用于连接到一提供扫描信号的扫描线,用于在所述扫描信号的控制下导通,使得所述第二晶体管导通以使第一电容提供的基准电压包含第二晶体管的第一阈值电压信息、发光元件的第二阈值电压信息和灰度信息。A first transistor, the first electrode of which is used to be connected to the bias current line, the second electrode is connected to the second control electrode, and the first control electrode is used to be connected to a scan line for providing a scan signal, for use in Turning on under the control of the scanning signal, so that the second transistor is turned on so that the reference voltage provided by the first capacitor includes the first threshold voltage information of the second transistor, the second threshold voltage information and grayscale information of the light-emitting element .
根据本申请的第三方面,本申请提供一种显示装置,包括:According to a third aspect of the present application, the present application provides a display device, comprising:
显示面板,包括若干如上述第一种的像素电路;A display panel, including a plurality of pixel circuits as described in the first type above;
栅极驱动电路,用于通过所述扫描线向像素电路提供扫描信号;a gate drive circuit, configured to provide a scan signal to the pixel circuit through the scan line;
数据驱动电路,用于通过所述数据线向像素电路提供灰度信息,所述数据驱动电路还包括偏置电流源、电压源和可控开关,所述偏置电流源、电压源分别通过偏置电流线向像素电路提供偏置电流、电源电压;A data driving circuit, used to provide gray scale information to the pixel circuit through the data line, the data driving circuit also includes a bias current source, a voltage source and a controllable switch, and the bias current source and the voltage source respectively pass the bias The setting current line provides bias current and power supply voltage to the pixel circuit;
时序控制电路,用于在所述扫描信号扫描一帧时间内,控制所述可控开关在数据输入阶段切换为偏置电流源和偏置电流线连通的状态,在发光阶段切换为所述电压源和偏置电流线连通的状态。The timing control circuit is used to control the controllable switch to switch to the state where the bias current source and the bias current line are connected in the data input stage, and to switch to the state of the voltage in the light-emitting stage within the scanning signal scanning time of one frame. The state in which the source and bias current lines are connected.
根据本申请的第四方面,本申请提供一种显示装置,包括:According to a fourth aspect of the present application, the present application provides a display device, including:
显示面板,包括若干如上述第二种的像素电路;A display panel, including a plurality of pixel circuits as in the second type above;
栅极驱动电路,用于通过所述扫描线向像素电路提供扫描信号;a gate drive circuit, configured to provide a scan signal to the pixel circuit through the scan line;
数据驱动电路,用于从所述偏置电流线上提取所述第一阈值电压信息及第二阈值电压信息,所述数据驱动电路包括偏置电流源、数据电压源、电压源和可控开关,所述偏置电流源、数据电压源、电压源分别通过偏置电流线向像素电路提供偏置电流、包含所述第一阈值电压信息及第二阈值电压信息及灰度信息的驱动电压、电源电压;A data driving circuit, configured to extract the first threshold voltage information and the second threshold voltage information from the bias current line, the data driving circuit includes a bias current source, a data voltage source, a voltage source and a controllable switch , the bias current source, the data voltage source, and the voltage source respectively provide a bias current, a driving voltage including the first threshold voltage information, the second threshold voltage information, and the gray scale information to the pixel circuit through the bias current line, voltage;
时序控制电路,用于在所述扫描信号扫描一帧时间内,控制所述可控开关在阈值提取模式切换为偏置电流源和偏置电流线连通的状态;在所述扫描信号扫描另一帧时间内,控制所述可控开关在发光模式的数据输入阶段切换为所述数据电压源和偏置电流线连通的状态,在发光模式的发光阶段切换为所述电压源和偏置电流线连通的状态。The timing control circuit is used to control the controllable switch to switch to the state where the bias current source and the bias current line are connected in the threshold value extraction mode during the scan signal scan time of one frame; In the frame time, control the controllable switch to switch to the state where the data voltage source and the bias current line are connected in the data input stage of the light-emitting mode, and switch to the state where the voltage source and the bias current line are connected in the light-emitting stage of the light-emitting mode. connected state.
根据本申请的第五方面,本申请提供一种显示驱动方法,所述方法基于上述第一种显示装置,所述方法包括:将所述扫描信号扫描一帧时间分为数据输入阶段和发光阶段;在所述数据输入阶段,通过电流偏置方式为所述第二晶体管提供包含所述第一阈值电压信息、发光元件的第二阈值电压信息和灰度信息的基准电压;在所述发光阶段,向所述第二晶体管提供电源电压,使得所述第二晶体管为发光元件提供与所述第一阈值电压信息及第二阈值电压信息无关的驱动电流。According to the fifth aspect of the present application, the present application provides a display driving method, the method is based on the above-mentioned first display device, and the method includes: dividing the scanning signal into a data input phase and a light emitting phase by scanning one frame time ; In the data input phase, provide the second transistor with a reference voltage including the first threshold voltage information, the second threshold voltage information of the light-emitting element and the grayscale information through a current bias mode; in the light-emitting phase , providing a power supply voltage to the second transistor, so that the second transistor provides a driving current for the light-emitting element that is not related to the first threshold voltage information and the second threshold voltage information.
根据本申请的第六方面,本申请提供一种显示驱动方法,所述方法基于上述第二种显示装置,所述方法包括:在所述扫描信号扫描一帧时间的阈值提取模式下,通过电流偏置方式从所述偏置电流线上提取所述第一阈值电压信息及第二阈值电压信息;将所述扫描信号扫描另一帧时间分为数据输入阶段和发光阶段,在所述数据输入阶段,通过电压编程方式为所述第二晶体管提供包含所述第一阈值电压信息、第二阈值电压信息和灰度信息的基准电压;在所述发光阶段,向所述第二晶体管提供电源电压,使得所述第二晶体管为发光元件提供与所述第一阈值电压信息及第二阈值电压信息无关的驱动电流。According to the sixth aspect of the present application, the present application provides a display driving method, the method is based on the above-mentioned second display device, and the method includes: in the threshold extraction mode in which the scanning signal scans one frame time, passing a current The bias mode extracts the first threshold voltage information and the second threshold voltage information from the bias current line; divides the scanning signal scanning another frame time into a data input phase and a light emitting phase, and during the data input In the stage of voltage programming, a reference voltage including the first threshold voltage information, second threshold voltage information and grayscale information is provided to the second transistor by means of voltage programming; in the light emitting stage, a power supply voltage is provided to the second transistor , so that the second transistor provides a driving current for the light-emitting element that is independent of the first threshold voltage information and the second threshold voltage information.
本申请的有益效果是:The beneficial effect of this application is:
通过提供一种像素电路、显示装置及显示驱动方法,通过电流偏置方式提取第二晶体管的第一阈值电压信息及发光元件的第二阈值电压信息,并连同像素的灰度信息一起作为第一电容的基准电压,从而在发光阶段,使通过发光元件的驱动电流与上述第一阈值电压信息及第二阈值电压信息无关,精确补偿了TFT器件及OLED的阈值电压漂移或显示面板各处TFT器件阈值电压的不均匀性,通过电压编程方式将灰度信息存储至第一电容,实现了快速的数据输入,并且,简单的电路结构增加了像素的开口率和显示装置的成品率,降低了生产成本。By providing a pixel circuit, a display device and a display driving method, the first threshold voltage information of the second transistor and the second threshold voltage information of the light-emitting element are extracted through a current bias method, and together with the grayscale information of the pixel are used as the first The reference voltage of the capacitor, so that in the light-emitting stage, the driving current through the light-emitting element has nothing to do with the above-mentioned first threshold voltage information and second threshold voltage information, and accurately compensates the threshold voltage drift of TFT devices and OLEDs or TFT devices around the display panel The non-uniformity of the threshold voltage stores the grayscale information in the first capacitor through voltage programming, which realizes fast data input, and the simple circuit structure increases the aperture ratio of the pixel and the yield of the display device, reducing the production rate. cost.
附图说明Description of drawings
图1为现有技术的无补偿两TFT像素电路;FIG. 1 is a prior art non-compensated two TFT pixel circuit;
图2为本申请实施例一的显示装置的结构图;FIG. 2 is a structural diagram of a display device according to Embodiment 1 of the present application;
图3为本申请实施例一的数据驱动电路53的结构图;FIG. 3 is a structural diagram of a data driving circuit 53 according to Embodiment 1 of the present application;
图4为本申请实施例一的像素电路56的结构图;FIG. 4 is a structural diagram of a pixel circuit 56 according to Embodiment 1 of the present application;
图5为本申请实施例一的显示装置在显示驱动过程中的一种信号时序图;FIG. 5 is a signal timing diagram during the display driving process of the display device according to Embodiment 1 of the present application;
图6为本申请实施例二的像素电路56的结构图;FIG. 6 is a structural diagram of a pixel circuit 56 according to Embodiment 2 of the present application;
图7为本申请实施例二的显示装置在显示驱动过程中的一种信号时序图;FIG. 7 is a signal timing diagram during the display driving process of the display device according to Embodiment 2 of the present application;
图8为本申请实施例三的数据驱动电路53的结构图;FIG. 8 is a structural diagram of a data driving circuit 53 in Embodiment 3 of the present application;
图9为本申请实施例三的像素电路56的结构图;FIG. 9 is a structural diagram of a pixel circuit 56 according to Embodiment 3 of the present application;
图10为本申请实施例三的显示装置在显示驱动过程中的一种信号时序图;FIG. 10 is a signal timing diagram during the display driving process of the display device according to Embodiment 3 of the present application;
图11为本申请实施例四的像素电路56的结构图;FIG. 11 is a structural diagram of a pixel circuit 56 according to Embodiment 4 of the present application;
图12为本申请其他实施例的显示装置中增加预充电电源46的示意图。FIG. 12 is a schematic diagram of adding a pre-charging power supply 46 to a display device according to another embodiment of the present application.
具体实施方式detailed description
下面通过具体实施方式结合附图对本发明作进一步详细说明。The present invention will be further described in detail below through specific embodiments in conjunction with the accompanying drawings.
首先对一些术语进行说明。晶体管可以是任何结构的晶体管,比如场效应晶体管(FieldEffectTransistor,FET)或者双极型晶体管(BipolarJunctionTransistor,BJT)。当晶体管为BJT时,其控制极是指BJT的基极B,第一、二电极分别指BJT的集电极C和发射极E;当晶体管为FET时,其控制极是指FET的栅极G,第一、二电极(即电流导通极)分别指FET的漏极D和源极S。显示装置中的晶体管通常为TFT器件,此时,晶体管的控制极是TFT器件的栅极G,第一、二电极分别指TFT器件的漏极D和源极S,在晶体管作为开关元件时,其漏极D和源极S可以互换,即第一、第二电极也可以分别指TFT器件的源极S和漏极D。后续所提第三、第四电极也同样类似。First some terminology is explained. The transistor may be a transistor of any structure, such as a field effect transistor (FieldEffectTransistor, FET) or a bipolar transistor (BipolarJunctionTransistor, BJT). When the transistor is a BJT, its control electrode refers to the base B of the BJT, and the first and second electrodes refer to the collector C and emitter E of the BJT respectively; when the transistor is a FET, its control electrode refers to the gate G of the FET , The first and second electrodes (that is, the current conduction electrodes) refer to the drain D and source S of the FET, respectively. The transistor in the display device is usually a TFT device. At this time, the control electrode of the transistor is the gate G of the TFT device, and the first and second electrodes refer to the drain D and the source S of the TFT device respectively. When the transistor is used as a switching element, The drain D and the source S can be interchanged, that is, the first and second electrodes can also refer to the source S and the drain D of the TFT device respectively. The third and fourth electrodes mentioned later are also similar.
实施例一:Embodiment one:
请参考图2,图2示出了本申请第一实施例的显示装置的结构,其主要包括显示面板、栅极驱动电路52及数据驱动电路53。显示面板包括若干像素阵列51。其中,像素阵列51是由N行M列像素电路56按矩阵方式排列而成,即该像素阵列51为N行、M列,其中N、M均为正整数。一般地,像素阵列51中的同一行像素电路56均连接到同一条扫描线57,像素阵列51中的同一列像素电路56则连接到同一条数据线55和偏置电流线54。栅极驱动电路52用于通过扫描线57向像素电路56提供扫描信号。数据驱动电路53用于通过数据线55向像素电路提供灰度信息,即将灰度信息通过数据线55传输到对应的像素单元内以实现图像灰度,并且为像素电路56提供偏置电流源47、电压源45及可控开关411,偏置电流源47提供偏置电流,电压源45为像素电路56的最终显示提供电源电压。Please refer to FIG. 2 . FIG. 2 shows the structure of the display device according to the first embodiment of the present application, which mainly includes a display panel, a gate driving circuit 52 and a data driving circuit 53 . The display panel includes several pixel arrays 51 . Wherein, the pixel array 51 is composed of N rows and M columns of pixel circuits 56 arranged in a matrix, that is, the pixel array 51 has N rows and M columns, where N and M are both positive integers. Generally, the pixel circuits 56 in the same row in the pixel array 51 are connected to the same scan line 57 , and the pixel circuits 56 in the same column in the pixel array 51 are connected to the same data line 55 and bias current line 54 . The gate driving circuit 52 is used to provide scanning signals to the pixel circuits 56 through the scanning lines 57 . The data driving circuit 53 is used to provide grayscale information to the pixel circuit through the data line 55, that is, to transmit the grayscale information to the corresponding pixel unit through the data line 55 to realize the image grayscale, and to provide the pixel circuit 56 with a bias current source 47 , the voltage source 45 and the controllable switch 411 , the bias current source 47 provides a bias current, and the voltage source 45 provides a power supply voltage for the final display of the pixel circuit 56 .
需要说明的是,尽管像素阵列51是以N×M矩阵形式布置,但是为了图示简化,图2所示的像素阵列51只以2×2矩阵形式布置,其他3×4矩阵形式布置、5×5矩阵形式布置等均可根据实际情况选择。It should be noted that although the pixel array 51 is arranged in the form of an N×M matrix, for the sake of simplification of illustration, the pixel array 51 shown in FIG. 2 is only arranged in the form of a 2×2 matrix. The layout in the form of ×5 matrix can be selected according to the actual situation.
请参考图3,上述数据驱动电路53主要包括数字模拟转换器49、输出缓冲48、电压源45、偏置电流源47及可控开关411组成。其中,数字模拟转换器49接收来自于总线410的表征灰度信息的数字信号和控制信号,并在控制信号的控制下将数字信号转化成模拟信号通过输出缓冲48输出到数据线55上,偏置电流源47用于提供偏置电流,可控开关411由一时序控制电路控制,电压源45、偏置电流源47通过可控开关411与偏置电流线54耦合。需要说明的是,本实施例中,时序控制电路包含于总线410中,因此,总线410一方面需要提供灰度信息,另一方面还要提供时序控制信号来控制可控开关411和数模转换器等。Please refer to FIG. 3 , the data driving circuit 53 mainly includes a digital-to-analog converter 49 , an output buffer 48 , a voltage source 45 , a bias current source 47 and a controllable switch 411 . Wherein, the digital-to-analog converter 49 receives the digital signal representing grayscale information and the control signal from the bus 410, and under the control of the control signal, converts the digital signal into an analog signal and outputs it to the data line 55 through the output buffer 48. The current source 47 is used to provide bias current, the controllable switch 411 is controlled by a timing control circuit, the voltage source 45 and the bias current source 47 are coupled to the bias current line 54 through the controllable switch 411 . It should be noted that, in this embodiment, the timing control circuit is included in the bus 410. Therefore, the bus 410 needs to provide grayscale information on the one hand, and on the other hand, also needs to provide timing control signals to control the controllable switch 411 and the digital-to-analog conversion. device etc.
请参考图4,上述像素电路56主要包括:一个有机发光二极管29作为发光元件,第一电容27,第二电容26,设置有第一控制极、第一电极及第二电极的第一晶体管24,以及设置有第二控制极、第三电极及第四电极的第二晶体管25,为方便起见,这里设定一个存储节点28(即第一电容27的第一端)。第一控制极耦合至扫描线57,第一电极耦合至偏置电流线54,偏置电流线54可由于可控开关411的动作在偏置电流源47及电压源45之间切换;第二控制极耦合至第二电极,第三电极耦合至偏置电流线54,第四电极耦合至有机发光二极管29的阳极,偏置电流源47提供的偏置电流可触发第一晶体管24及第二晶体管25将第二晶体管25的第一阈值电压信息及有机发光二极管29的第二阈值电压信息存储至第一电容27,以为第二晶体管25提供基准电压;第一电容27的第一端耦合至第二电极,第二端耦合至数据线55,数据线55可提供灰度信息或参考电位,第二电容26的第三端耦合至扫描线57,第四端耦合至第二电极;有机发光二极管29的阴极耦合至地线。Please refer to FIG. 4, the pixel circuit 56 mainly includes: an organic light emitting diode 29 as a light emitting element, a first capacitor 27, a second capacitor 26, a first transistor 24 with a first control electrode, a first electrode and a second electrode , and the second transistor 25 provided with a second control electrode, a third electrode and a fourth electrode. For convenience, a storage node 28 (ie, the first end of the first capacitor 27 ) is set here. The first control electrode is coupled to the scan line 57, the first electrode is coupled to the bias current line 54, and the bias current line 54 can be switched between the bias current source 47 and the voltage source 45 due to the action of the controllable switch 411; The control electrode is coupled to the second electrode, the third electrode is coupled to the bias current line 54, the fourth electrode is coupled to the anode of the organic light emitting diode 29, and the bias current provided by the bias current source 47 can trigger the first transistor 24 and the second transistor 24. The transistor 25 stores the first threshold voltage information of the second transistor 25 and the second threshold voltage information of the organic light emitting diode 29 to the first capacitor 27, so as to provide a reference voltage for the second transistor 25; the first terminal of the first capacitor 27 is coupled to The second electrode, the second end is coupled to the data line 55, the data line 55 can provide grayscale information or reference potential, the third end of the second capacitor 26 is coupled to the scan line 57, and the fourth end is coupled to the second electrode; organic light emitting The cathode of diode 29 is coupled to ground.
具体实现时,偏置电流线54耦合到10μA的偏置电流源47上,为其所耦合的像素电路56提供10μA的偏置电流。扫描线57可以耦合到栅极驱动电路52的某行驱动电路上,用于为某一个或一行像素电路56提供选择或非选择信号,例如,若扫描线57上充电到15V,会使得所耦合的像素电路56处于下述的数据输入选择阶段,若扫描线57上充电到-5V,会使得所耦合的像素电路56处于下述的数据输入非选择阶段。当然,上述数值为举例,实际应用时可选用其他数值不仅限于此。During specific implementation, the bias current line 54 is coupled to a 10 μA bias current source 47 to provide a 10 μA bias current to the pixel circuit 56 coupled thereto. The scanning line 57 can be coupled to a certain row driving circuit of the gate driving circuit 52 to provide a selection or non-selection signal for a certain or a row of pixel circuits 56. For example, if the scanning line 57 is charged to 15V, the coupled The pixel circuit 56 is in the following data input selection phase, if the scan line 57 is charged to -5V, the coupled pixel circuit 56 will be in the following data input non-selection phase. Of course, the above numerical values are examples, and other numerical values may be selected in actual application and are not limited thereto.
请参考图5,图5是图4所示像素电路56的一种信号时序图,其中SCAN[1]为第一行像素的扫描信号,以此类推。下面结合图5来具体描述图4所示像素电路56的一种显示驱动过程,即本申请实施例一的显示驱动方法。Please refer to FIG. 5 . FIG. 5 is a signal timing diagram of the pixel circuit 56 shown in FIG. 4 , wherein SCAN[1] is the scanning signal of the first row of pixels, and so on. A display driving process of the pixel circuit 56 shown in FIG. 4 , that is, a display driving method according to Embodiment 1 of the present application, will be described in detail below in conjunction with FIG. 5 .
由图5所示,整个扫描信号扫描一帧的时间被分为数据输入阶段和发光阶段。其中在数据输入阶段,每行的像素电路56又分为数据输入选择阶段和数据输入非选择阶段。当与像素电路56耦合的扫描线57的电平为高时,则像素电路56处于数据输入选择阶段;当与像素电路56耦合的扫描线57的电平为低时,则像素电路56处于数据输入非选择阶段。As shown in FIG. 5 , the whole scan signal scanning time of one frame is divided into a data input phase and a light emitting phase. In the data input phase, the pixel circuits 56 of each row are further divided into a data input selection phase and a data input non-selection phase. When the level of the scan line 57 coupled with the pixel circuit 56 is high, the pixel circuit 56 is in the data input selection stage; when the level of the scan line 57 coupled with the pixel circuit 56 is low, the pixel circuit 56 is in the data input selection stage; Enter the non-selection stage.
在数据输入选择阶段,由于总线410控制可控开关411,偏置电流线54耦合到偏置电流源47上,并且提供一个恒定的偏置电流。当与像素电路56耦合的扫描线57变为高电平时,第一晶体管24处于导通状态,使像素电路56处于数据输入选择阶段。此时,偏置电流线54上的偏置电流通过第一晶体管24给第一电容27充电,也就是给存储节点28充电,存储节点28的电位因此会慢慢升高。由于第二晶体管25的第二控制极耦合到存储节点28,所以第二晶体管25会因存储节点28电位的升高而逐渐由截止状态变为导通状态。第二晶体管25导通以后,偏置电流线54上的偏置电流就会部分流过第二晶体管25的第三电极和第四电极,此流过第二晶体管25的电流大小为:During the data input selection phase, since the bus 410 controls the controllable switch 411, the bias current line 54 is coupled to the bias current source 47 and provides a constant bias current. When the scanning line 57 coupled with the pixel circuit 56 becomes high level, the first transistor 24 is in the conduction state, so that the pixel circuit 56 is in the data input selection phase. At this time, the bias current on the bias current line 54 charges the first capacitor 27 through the first transistor 24 , that is, charges the storage node 28 , so the potential of the storage node 28 will gradually increase. Since the second control electrode of the second transistor 25 is coupled to the storage node 28 , the second transistor 25 will gradually change from the off state to the on state due to the increase in the potential of the storage node 28 . After the second transistor 25 is turned on, the bias current on the bias current line 54 will partially flow through the third electrode and the fourth electrode of the second transistor 25, and the magnitude of the current flowing through the second transistor 25 is:
其中,μn、Cox、W、L及VTH2分别为第二晶体管25的有效迁移率、单位面积栅电容、沟道宽度、沟道长度以及第一阈值电压。Vstore、VOLED则分别为存储节点28的电压和有机发光二极管29上的电压。由公式(2),可以看出,流经第二晶体管25的电流随存储节点28的电位升高而增大。最后,当IDS2等于偏置电流IBIAS的时候,偏置电流IBIAS在像素电路56中完全建立起来,此时存储节点28的电位Vstore可以由公式(2)推导为:Wherein, μ n , C ox , W, L and V TH2 are the effective mobility, the gate capacitance per unit area, the channel width, the channel length and the first threshold voltage of the second transistor 25 respectively. V store and V OLED are the voltage of the storage node 28 and the voltage of the OLED 29 respectively. From formula (2), it can be seen that the current flowing through the second transistor 25 increases as the potential of the storage node 28 increases. Finally, when I DS2 is equal to the bias current I BIAS , the bias current I BIAS is fully established in the pixel circuit 56, and at this time the potential V store of the storage node 28 can be deduced from the formula (2):
此处,IBIAS为偏置电流,VOLED可以认为是有机发光二极管29的偏置电压,它与有机发光二极管29的第二阈值电压是相关的。由(3)可以发现,此时存储节点28的电位包含了第二晶体管25的第一阈值电压信息和有机发光二极管29的第二阈值电压信息。Here, I BIAS is the bias current, and V OLED can be regarded as the bias voltage of the OLED 29 , which is related to the second threshold voltage of the OLED 29 . It can be found from (3) that the potential of the storage node 28 at this time includes the first threshold voltage information of the second transistor 25 and the second threshold voltage information of the organic light emitting diode 29 .
在数据输入选择阶段,数据线55会同步提供代表灰度信息的数据电压,此处设定其电压值为Vdata。此数据电压Vdata和存储节点28的存储电压Vstore,分别存储在第一电容27两端,则第一电容27上的电压差为:Vdata-Vstore。In the data input selection phase, the data line 55 will synchronously provide a data voltage representing gray scale information, and the voltage value thereof is set to V data here. The data voltage V data and the storage voltage V store of the storage node 28 are respectively stored at both ends of the first capacitor 27 , and the voltage difference on the first capacitor 27 is: V data −V store .
此时,存储节点28的电荷量可以表示为:At this time, the charge amount of the storage node 28 can be expressed as:
QA=(Vstore-Vdata)C1+(Vstore-VH)C2+(Vstore-VOLED-VTH2)Cg2……(4)Q A =(V store -V data )C1+(V store -V H )C2+(V store -V OLED -V TH2 )C g2 ……(4)
其中,VH为数据输入选择阶段扫描信号的电平值,Cg2为第二晶体管的栅电容,C1和C2分别为第一电容26和第二电容27的电容值。Wherein, V H is the level value of the scanning signal in the data input selection stage, C g2 is the gate capacitance of the second transistor, C1 and C2 are the capacitance values of the first capacitor 26 and the second capacitor 27 respectively.
在数据输入选择阶段结束,数据输入非选择阶段开始时,扫描线57由高电平变为低电平,此电压变化不但使得第一晶体管24由导通状态变为截止状态,还通过第二电容26耦合到存储节点28,使存储节点28的电位变为第一负电位,第二晶体管25在数据输入非选择阶段进入并保持截止状态。When the data input selection phase ends and the data input non-selection phase begins, the scanning line 57 changes from a high level to a low level. This voltage change not only makes the first transistor 24 change from the on state to the off state, but also passes the second The capacitor 26 is coupled to the storage node 28, so that the potential of the storage node 28 becomes a first negative potential, and the second transistor 25 enters and maintains an off state during the data input non-selection phase.
在数据输入非选择阶段,第一晶体管24和第二晶体管25都处于截止状态,偏置电流线54和数据线55为其他像素电路56分别提供偏置电流和表征灰度信息的数据电压。需要注意的是,在这个过程中,数据线55的电平变化可能会通过第一电容27耦合到存储节点28,使存储节点28的电位升高,因此,为了确保第二晶体管25在数据输入非选择阶段不导通,存储节点28的第一负电位需要足够低。In the data input non-selection stage, both the first transistor 24 and the second transistor 25 are in the cut-off state, and the bias current line 54 and the data line 55 respectively provide bias current and data voltage representing grayscale information for other pixel circuits 56 . It should be noted that during this process, the level change of the data line 55 may be coupled to the storage node 28 through the first capacitor 27, so that the potential of the storage node 28 will increase. Therefore, in order to ensure that the second transistor 25 is In the non-selection phase, the first negative potential of the storage node 28 needs to be sufficiently low.
在上述数据输入阶段,所有像素逐行进入数据输入选择阶段和数据输入非选择阶段,并且同一时间只有一行像素处于数据输入选择阶段,并在此数据输入选择阶段将上述第一阈值电压信息、第二阈值电压信息及灰度信息作为基准电压存储到像素的存储节点28中。In the above data input stage, all pixels enter the data input selection stage and data input non-selection stage row by row, and only one row of pixels is in the data input selection stage at the same time, and in this data input selection stage, the above-mentioned first threshold voltage information, second Two threshold voltage information and gray scale information are stored in the storage node 28 of the pixel as a reference voltage.
在数据输入阶段过后,紧接着是发光阶段。在发光阶段,由于总线410控制可控开关411,偏置电流线54断开与偏置电流源47的连接,而耦合到电压源45上,此电压源45用于为所有与偏置电流线54耦合的像素电路提供恒定的电源电压,使得第二晶体管25为有机发光二极管29提供一驱动电流。数据线55此时也提供一个参考电位,此电压值为Vref。数据线55上电位的变动会通过第一电容27耦合到存储节点28中,使得存储节点28的电位变为VHIGH。需要注意的是,在数据输入非选择阶段和发光阶段,存储节点28处于悬浮状态,其中的电荷量没有变化。其在发光阶段可以表示为:After the data input phase, the light phase follows. In the lighting phase, since the bus 410 controls the controllable switch 411, the bias current line 54 is disconnected from the bias current source 47 and coupled to the voltage source 45, which is used to power all the bias current lines. The pixel circuit coupled with 54 provides a constant power supply voltage, so that the second transistor 25 provides a driving current for the OLED 29 . At this time, the data line 55 also provides a reference potential, which is V ref . The change in the potential on the data line 55 will be coupled to the storage node 28 through the first capacitor 27, so that the potential of the storage node 28 becomes V HIGH . It should be noted that, during the data input non-selection phase and the light-emitting phase, the storage node 28 is in a floating state, and the amount of charge therein does not change. It can be expressed as:
QA=(VHIGH-VL)C2+(VHIGH-Vref)C1+(VHIGH-VOLED-VTH2)Cg2……(5)Q A =(V HIGH -V L )C2+(V HIGH -V ref )C1+(V HIGH -V OLED -V TH2 )C g2 ... (5)
其中,VL是数据输入非选择阶段扫描信号的电压值。将公式(4)代入到公式(5)中,可以求得VHIGH的表达式为:Among them, V L is the voltage value of the scanning signal in the data input non-selection stage. Substituting formula (4) into formula (5), the expression of VHIGH can be obtained as:
其中,VOVERDRIVE与上述第一阈值电压和第二阈值电压无关。由公式(6)可以推出,在发光阶段,有机发光二极管29上流过的驱动电流为:Wherein, V OVERDRIVE has nothing to do with the above-mentioned first threshold voltage and second threshold voltage. It can be deduced from formula (6), that in the light-emitting stage, the driving current flowing through the organic light-emitting diode 29 is:
IOLED=1/2μnCoxW/L(VHIGH-VOLED-VTH2)2=1/2μnCoxW/L(VOVERDRIVE)2……(7)I OLED =1/2μ n C ox W/L(V HIGH -V OLED -V TH2 ) 2 =1/2μ n C ox W/L(V OVERDRIVE ) 2 ……(7)
由公式(7)可以发现,在发光阶段,有机发光二极管29上所流过的驱动电流与第二晶体管25的第一阈值电压以及有机发光二极管29的第二阈值电压无关,即可以补偿由这两种元件阈值电压变化引起的显示的不均匀性,另一方面,由于上述驱动电流IOLED与第二晶体管25的第一阈值电压无关,则可以补偿因TFT器件采用多晶硅材料制成而导致面板各处TFT器件的阈值电压VTH不均匀性,保证了显示面板上的显示的均匀性。From the formula (7), it can be found that in the light-emitting stage, the driving current flowing through the organic light-emitting diode 29 has nothing to do with the first threshold voltage of the second transistor 25 and the second threshold voltage of the organic light-emitting diode 29, that is, it can compensate for the The non-uniformity of the display caused by the variation of the threshold voltage of the two elements, on the other hand, since the above-mentioned drive current IOLED has nothing to do with the first threshold voltage of the second transistor 25, it can compensate for the TFT device being made of polysilicon material which causes the panel The non-uniformity of the threshold voltage V TH of the TFT devices in various places ensures the uniformity of the display on the display panel.
整体来看,显示装置的工作分为数据输入阶段和发光阶段,其中数据输入阶段又分为数据输入选择阶段和数据输入非选择阶段。像素在数据输入选择阶段由扫描线57控制处于开启状态,耦合到偏置电流源47的偏置电流线54上提供的偏置电流流过像素电路56,并在存储节点28产生相应的基准电压。这个阶段有机发光二极管29会由于偏置电流的流过而发光。在数据输入非选择阶段,由于扫描线57负向变动使得像素电路56处于关闭状态,有机发光二极管29不会发光。在发光阶段,数据线55上给出一个高的参考电位,偏置电流线54也耦合到电压源45上,显示面板上所有像素电路56都开始导通,并且导通的电流大小与数据输入选择阶段输入的数据电压相关,即有机发光二极管29上的驱动电流与第二晶体管25的第一阈值电压以及有机发光二极管29的第二阈值电压无关,而与灰度信息有关。平均来看,显示面板的整体亮度是有机发光二极管29在数据输入选择阶段和发光阶段发出的光的平均效应。On the whole, the work of the display device is divided into a data input phase and a light emitting phase, wherein the data input phase is further divided into a data input selection phase and a data input non-selection phase. The pixel is in the ON state controlled by the scan line 57 during the data input selection phase, the bias current provided by the bias current line 54 coupled to the bias current source 47 flows through the pixel circuit 56, and generates a corresponding reference voltage at the storage node 28 . At this stage, the organic light emitting diode 29 will emit light due to the flow of the bias current. In the non-selection phase of data input, the pixel circuit 56 is turned off due to the negative change of the scanning line 57, and the organic light emitting diode 29 does not emit light. In the light-emitting phase, a high reference potential is provided on the data line 55, and the bias current line 54 is also coupled to the voltage source 45. All pixel circuits 56 on the display panel start to conduct, and the magnitude of the conduction current is the same as that of the data input. The data voltage input in the selection phase is related, that is, the driving current on the OLED 29 is not related to the first threshold voltage of the second transistor 25 and the second threshold voltage of the OLED 29, but related to grayscale information. On average, the overall brightness of the display panel is the average effect of the light emitted by the organic light emitting diode 29 in the data input selection phase and the light emitting phase.
实施例二:Embodiment two:
请参考图6,与实施例一的区别主要在于,显示装置中,栅极驱动电路52还提供一在数据输入阶段与扫描线电平相反的控制线64,而像素电路56主要包括:一个有机发光二极管29作为发光元件,第一电容27,设置有第一控制极、第一电极及第二电极的第一晶体管24作为开关控制模块,以及设置有第二控制极、第三电极及第四电极的第二晶体管25作为驱动模块,为方便起见,这里设定一个存储节点68(即第一电容27的第一端)。第一控制极耦合至扫描线57,第一电极耦合至偏置电流线54,偏置电流线54可由于可控开关411的动作在偏置电流源47及电压源45之间切换;第二控制极耦合至第二电极,第三电极耦合至偏置电流线54,第四电极耦合至有机发光二极管29的阳极,偏置电流源47提供的偏置电流可触发第一晶体管24及第二晶体管25将第二晶体管25的第一阈值电压信息及有机发光二极管29的第二阈值电压信息存储至第一电容27,以为第二晶体管25提供基准电压;第一电容27的第一端耦合至第二电极,第二端耦合至数据线55,数据线55可提供灰度信息或参考电位;有机发光二极管29的阴极耦合至控制线64。Please refer to FIG. 6 , the main difference from Embodiment 1 is that in the display device, the gate drive circuit 52 also provides a control line 64 whose level is opposite to that of the scanning line in the data input stage, and the pixel circuit 56 mainly includes: an organic The light-emitting diode 29 is used as a light-emitting element, the first capacitor 27, the first transistor 24 provided with the first control electrode, the first electrode and the second electrode is used as a switch control module, and the second control electrode, the third electrode and the fourth electrode are provided. The second transistor 25 of the electrode is used as a driving module. For convenience, a storage node 68 (that is, the first terminal of the first capacitor 27 ) is set here. The first control electrode is coupled to the scan line 57, the first electrode is coupled to the bias current line 54, and the bias current line 54 can be switched between the bias current source 47 and the voltage source 45 due to the action of the controllable switch 411; The control electrode is coupled to the second electrode, the third electrode is coupled to the bias current line 54, the fourth electrode is coupled to the anode of the organic light emitting diode 29, and the bias current provided by the bias current source 47 can trigger the first transistor 24 and the second transistor 24. The transistor 25 stores the first threshold voltage information of the second transistor 25 and the second threshold voltage information of the organic light emitting diode 29 to the first capacitor 27, so as to provide a reference voltage for the second transistor 25; the first terminal of the first capacitor 27 is coupled to The second electrode, the second terminal is coupled to the data line 55 , the data line 55 can provide grayscale information or reference potential; the cathode of the organic light emitting diode 29 is coupled to the control line 64 .
请参考图7,图7是图6所示像素电路56的一种信号时序图,其中SCAN[1]为第一行像素的扫描信号,CNTR[1]为第一行像素的控制线上的控制信号,以此类推。下面结合图7来具体描述图6所示像素电路56的一种显示驱动过程,即本申请实施例二的显示驱动方法。Please refer to FIG. 7. FIG. 7 is a signal timing diagram of the pixel circuit 56 shown in FIG. control signals, and so on. A display driving process of the pixel circuit 56 shown in FIG. 6 , that is, a display driving method according to Embodiment 2 of the present application, will be described in detail below in conjunction with FIG. 7 .
由图7所示,整个扫描信号扫描一帧的时间被分为数据输入阶段和发光阶段。其中在数据输入阶段,每行的像素电路56又分为数据输入选择阶段和数据输入非选择阶段。当与像素电路56耦合的扫描线57的电平为高时,则像素电路56处于数据输入选择阶段;当与像素电路56耦合的扫描线57的电平为低时,则像素电路56处于数据输入非选择阶段。As shown in FIG. 7 , the whole scan signal scanning time of one frame is divided into a data input phase and a light emitting phase. In the data input phase, the pixel circuits 56 of each row are further divided into a data input selection phase and a data input non-selection phase. When the level of the scan line 57 coupled with the pixel circuit 56 is high, the pixel circuit 56 is in the data input selection stage; when the level of the scan line 57 coupled with the pixel circuit 56 is low, the pixel circuit 56 is in the data input selection stage; Enter the non-selection stage.
在数据输入选择阶段,由于总线410控制可控开关411,偏置电流线54耦合到偏置电流源47上,并且提供一个恒定的偏置电流。当与像素电路56耦合的扫描线57变为高电平时,第一晶体管24处于导通状态,使像素电路56处于数据输入选择阶段。此时,控制线64为低电平,偏置电流线54上的偏置电流通过第一晶体管24给存储节点68充电,存储节点68的电位因此会慢慢升高。由于第二晶体管25的第二控制极耦合到存储节点68,所以第二晶体管25会因存储节点68电位的升高而逐渐由截止状态变为导通状态。第二晶体管25导通以后,偏置电流线54上的偏置电流就会部分流过第二晶体管25的第三电极和第四电极,此流过第二晶体管25的电流大小可仍由上述公式(2)表示。During the data input selection phase, since the bus 410 controls the controllable switch 411, the bias current line 54 is coupled to the bias current source 47 and provides a constant bias current. When the scanning line 57 coupled with the pixel circuit 56 becomes high level, the first transistor 24 is in the conduction state, so that the pixel circuit 56 is in the data input selection phase. At this time, the control line 64 is at a low level, and the bias current on the bias current line 54 charges the storage node 68 through the first transistor 24, so the potential of the storage node 68 will gradually increase. Since the second control electrode of the second transistor 25 is coupled to the storage node 68 , the second transistor 25 will gradually change from the off state to the on state due to the increase in the potential of the storage node 68 . After the second transistor 25 is turned on, the bias current on the bias current line 54 will partially flow through the third electrode and the fourth electrode of the second transistor 25, and the magnitude of the current flowing through the second transistor 25 can still be determined by the above-mentioned Formula (2) expresses.
由公式(2),可以看出,流经第二晶体管25的电流随存储节点68的电位升高而增大。最后,当IDS2等于偏置电流的时候,偏置电流在像素电路56中完全建立起来,此时存储节点68的电位Vstore可以由上述公式(3)类似表示。From formula (2), it can be seen that the current flowing through the second transistor 25 increases as the potential of the storage node 68 increases. Finally, when I DS2 is equal to the bias current, the bias current is fully established in the pixel circuit 56 , and the potential V store of the storage node 68 can be similarly expressed by the above formula (3).
由(3)可以发现,此时存储节点68的电位包含了第二晶体管25的第一阈值电压信息和有机发光二极管29的第二阈值电压信息。It can be found from (3) that the potential of the storage node 68 at this time includes the first threshold voltage information of the second transistor 25 and the second threshold voltage information of the organic light emitting diode 29 .
需要注意的是,在数据输入选择阶段,数据线55会同步提供代表灰度信息的数据电压,即灰度信息,此处设定其电压值为Vdata。此数据电压Vdata和存储节点68的存储电压Vstore,分别存储在第一电容27两端,则第一电容27上的电压差为:Vdata-Vstore。It should be noted that during the data input selection stage, the data line 55 will synchronously provide a data voltage representing grayscale information, that is, grayscale information, and its voltage value is set here as V data . The data voltage V data and the storage voltage V store of the storage node 68 are respectively stored at both ends of the first capacitor 27 , and the voltage difference on the first capacitor 27 is: V data −V store .
在数据输入选择阶段结束时,数据输入非选择阶段开始时,扫描线57由高电平变为低电平,从而使得第一晶体管24由导通状态变为截止状态,同时控制线64的电平由低变为高,使得第二晶体管25和有机发光二极管29也都处于并保持在截止状态。At the end of the data input selection phase and the beginning of the data input non-selection phase, the scanning line 57 changes from high level to low level, so that the first transistor 24 changes from the on state to the off state, and at the same time, the voltage of the control line 64 The level changes from low to high, so that both the second transistor 25 and the organic light emitting diode 29 are also in and remain in the cut-off state.
在数据输入非选择阶段,第一晶体管24和第二晶体管25都处于截止状态,偏置电流线54和数据线55为其他像素提供分别偏置电流和表征灰度信息的数据电压。需要注意的是,在这个过程中,数据线55的电平变化可能会通过第一电容27耦合到存储节点68,使存储节点68的电位升高,因此,控制线64的高电平要足够高以确保第二晶体25在数据输入非选择阶段不导通。In the data input non-selection stage, both the first transistor 24 and the second transistor 25 are in the cut-off state, and the bias current line 54 and the data line 55 respectively provide bias current and data voltage representing grayscale information to other pixels. It should be noted that during this process, the level change of the data line 55 may be coupled to the storage node 68 through the first capacitor 27, so that the potential of the storage node 68 will increase. Therefore, the high level of the control line 64 must be sufficient. High to ensure that the second crystal 25 is not turned on during the data input non-selection phase.
在上述数据输入阶段,所有像素逐行进入数据输入选择阶段和数据输入非选择阶段,并且同一时间只有一行像素处于数据输入选择阶段,并在此时将上述第一阈值电压信息、第二阈值电压信息及灰度信息作为基准电压存储到像素的存储节点68中。In the above-mentioned data input stage, all pixels enter the data input selection stage and data input non-selection stage row by row, and only one row of pixels is in the data input selection stage at the same time, and at this time the above-mentioned first threshold voltage information, second threshold voltage information Information and gradation information are stored in the storage node 68 of the pixel as a reference voltage.
在数据输入阶段过后,紧接着是发光阶段。在发光阶段,由于总线410控制可控开关411,偏置电流线54断开与偏置电流源47的连接,而耦合到一电压源45上,此电压源45为所有与偏置电流线54耦合的像素电路提供恒定的电源电压,使得第二晶体管25为有机发光二极管29提供一驱动电流。所有的控制线64也变回低电平。此时,数据线55也提供一个参考电位,此电压值为Vref。数据线55上电位的变动会通过第一电容27耦合到存储节点68中,使得存储节点68的电位变为:After the data input phase, the light phase follows. In the light-emitting phase, since the bus 410 controls the controllable switch 411, the bias current line 54 is disconnected from the bias current source 47, and coupled to a voltage source 45, which is all connected to the bias current line 54. The coupled pixel circuit provides a constant power supply voltage, so that the second transistor 25 provides a driving current for the OLED 29 . All control lines 64 also go back low. At this time, the data line 55 also provides a reference potential, which is V ref . The change in potential on the data line 55 will be coupled to the storage node 68 through the first capacitor 27, so that the potential of the storage node 68 becomes:
Cg2为第二晶体管25的栅电容,VOVERDRIVE是第二晶体管25的过驱动电压,其值与第二晶体管25的第一阈值电压或有机发光二极管29的第二阈值电压无关。C g2 is the gate capacitance of the second transistor 25 , V OVERDRIVE is the overdrive voltage of the second transistor 25 , and its value has nothing to do with the first threshold voltage of the second transistor 25 or the second threshold voltage of the OLED 29 .
由公式(8)可以推出,在发光阶段,有机发光二极管29上流过的驱动电流为:From formula (8), it can be deduced that in the light-emitting stage, the driving current flowing through the organic light-emitting diode 29 is:
IOLED=1/2μnCoxW/L(VHIGH-VOLED-VTH2)2=1/2μnCoxW/L(VOVERDRIVE)2......(9)I OLED =1/2μ n C ox W/L(V HIGH -V OLED -V TH2 ) 2 =1/2μ n C ox W/L(V OVERDRIVE ) 2 ......(9)
由公式(9),可以发现,在发光阶段,有机发光二极管29上所流过的驱动电流与第二晶体管25的第一阈值电压以及有机发光二极管29的第二阈值电压无关,即可以补偿由这两种元件阈值电压变化引起的显示的不均匀性,另一方面,由于上述驱动电流IOLED与第二晶体管25的第一阈值电压无关,则可以补偿因TFT器件采用多晶硅材料制成而导致面板各处TFT器件的阈值电压VTH不均匀性,保证了显示面板上的显示的均匀性。From formula (9), it can be found that in the light-emitting phase, the driving current flowing through the organic light-emitting diode 29 has nothing to do with the first threshold voltage of the second transistor 25 and the second threshold voltage of the organic light-emitting diode 29, that is, it can compensate for the The non-uniformity of the display caused by the variation of the threshold voltage of these two elements, on the other hand, because the above-mentioned drive current IOLED has nothing to do with the first threshold voltage of the second transistor 25, then it can compensate for the TFT device made of polysilicon material. The non-uniformity of the threshold voltage V TH of the TFT devices in various parts of the panel ensures the uniformity of the display on the display panel.
本实施例相对于实施例一由于省去了第二电容26,进一步减小了像素面积,增加了像素开口率。Compared with the first embodiment, this embodiment further reduces the pixel area and increases the pixel aperture ratio because the second capacitor 26 is omitted.
实施例三:Embodiment three:
请参考图8及图9,与实施例一的区别主要在于,显示装置中,如图8所示,数据驱动电路53还包括由模拟数字转换器104、输入缓冲器103、外部存储105、加法器106、数字模拟转换器107及输出缓冲器108组成的数据电压源,其中,模拟数字转换器104通过输入缓冲器103耦合到偏置电流源47的输出端,并且可通过可控开关411完成与偏置电流线54的耦合与断开,上述各器件功能在下述显示驱动过程中进行对应描述。如图9所示,像素电路56主要包括:一个有机发光二极管29作为发光元件,第二电容26,第一电容27,设置有第一控制极、第一电极及第二电极的第一晶体管24作为开关控制模块,以及设置有第二控制极、第三电极及第四电极的第二晶体管25作为驱动模块,为方便起见,这里设定一个存储节点88(即第一电容27的第一端)。第一控制极耦合至扫描线57,第一电极耦合至偏置电流线54,偏置电流线54可由于可控开关411的动作在偏置电流源47、输出缓冲器108及电压源45之间切换;第二控制极耦合至第二电极,第三电极耦合至偏置电流线54,第四电极耦合至有机发光二极管29的阳极,偏置电流源47提供的偏置电流可触发第一晶体管24及第二晶体管25将第二晶体管25的第一阈值电压信息及有机发光二极管29的第二阈值电压信息存储至第一电容27及外部存储105;第一电容27的第一端耦合至第二电极,第二端耦合至公共节点83,公共节点83在公共节点电位及参考电位之间切换,第二电容26的第三端耦合至扫描线57,第四端耦合至第二电极;有机发光二极管29的阴极耦合至地线。公共节点83可以是一行或整个显示面板所有行共享的节点。Please refer to FIG. 8 and FIG. 9. The difference from Embodiment 1 is that in the display device, as shown in FIG. 106, a digital-to-analog converter 107 and an output buffer 108, wherein the analog-to-digital converter 104 is coupled to the output end of the bias current source 47 through the input buffer 103, and can be completed by a controllable switch 411 The coupling and disconnection of the bias current line 54 and the functions of the above components are described in the following display driving process. As shown in FIG. 9, the pixel circuit 56 mainly includes: an organic light emitting diode 29 as a light-emitting element, a second capacitor 26, a first capacitor 27, and a first transistor 24 with a first control electrode, a first electrode, and a second electrode. As the switch control module, and the second transistor 25 provided with the second control electrode, the third electrode and the fourth electrode is used as the driving module, for convenience, a storage node 88 (i.e. the first end of the first capacitor 27) is set here ). The first control electrode is coupled to the scan line 57, the first electrode is coupled to the bias current line 54, and the bias current line 54 can be connected between the bias current source 47, the output buffer 108 and the voltage source 45 due to the action of the controllable switch 411. The second control electrode is coupled to the second electrode, the third electrode is coupled to the bias current line 54, the fourth electrode is coupled to the anode of the organic light emitting diode 29, and the bias current provided by the bias current source 47 can trigger the first The transistor 24 and the second transistor 25 store the first threshold voltage information of the second transistor 25 and the second threshold voltage information of the organic light emitting diode 29 to the first capacitor 27 and the external storage 105; the first terminal of the first capacitor 27 is coupled to The second electrode, the second terminal is coupled to the common node 83, the common node 83 is switched between the common node potential and the reference potential, the third terminal of the second capacitor 26 is coupled to the scan line 57, and the fourth terminal is coupled to the second electrode; The cathode of the OLED 29 is coupled to the ground. The common node 83 may be a node shared by one row or all rows of the entire display panel.
图8中,外部存储105与加法器106等可单独设置于数据驱动电路53之外,形成可共用的功能元件。In FIG. 8 , the external memory 105 and the adder 106 can be separately arranged outside the data driving circuit 53 to form shared functional elements.
请参考图10,图10显示的是图9所示像素电路56的一种信号时序图,其中SCAN[1]为第一行像素的扫描信号,以此类推。下面结合图8和图10来具体描述图9所示像素电路56的一种显示驱动过程,即本申请实施例三的显示驱动方法。Please refer to FIG. 10 . FIG. 10 shows a signal timing diagram of the pixel circuit 56 shown in FIG. 9 , wherein SCAN[1] is the scanning signal of the first row of pixels, and so on. A display driving process of the pixel circuit 56 shown in FIG. 9 , that is, a display driving method according to Embodiment 3 of the present application, will be described in detail below with reference to FIGS. 8 and 10 .
图8和图10所示的是一种采用外部补偿的驱动方法,这种驱动方式主要先将需要补偿的驱动模块及发光元件的阈值电压信息提取出来并以数字信号的形式存储到外部存储中,在输入灰度信息时,则将所存储的阈值电压信息及灰度信息一起叠加以实现阈值电压的补偿功能。由图10可以知,外部补偿的整个驱动过程可以在两种模式下进行:一种是阈值提取模式,一种是正常的发光模式。其中阈值提取模式可以在显示装置开关机的时候执行一次,其余时间都工作在发光模式;或者在显示装置开关机的时候执行一次后,在接下来的发光模式中每隔一帧或几帧时间对某一行的像素进行阈值电压信息的提取,以实时刷新其在外部存储中的阈值电压信息。Figure 8 and Figure 10 show a driving method using external compensation. This driving method mainly extracts the threshold voltage information of the driving module and light-emitting elements that need compensation and stores them in the external storage in the form of digital signals. , when the grayscale information is input, the stored threshold voltage information and grayscale information are superimposed together to realize the compensation function of the threshold voltage. It can be seen from Fig. 10 that the entire driving process of external compensation can be performed in two modes: one is the threshold value extraction mode, and the other is the normal light emitting mode. The threshold extraction mode can be executed once when the display device is turned on and off, and the rest of the time is in the light-emitting mode; or after being executed once when the display device is turned on and off, every frame or several frames in the next light-emitting mode Extract the threshold voltage information of pixels in a certain row to refresh their threshold voltage information in external storage in real time.
在阈值提取模式中,像素电路56的工作过程分为阈值提取选择阶段和阈值提取非选择阶段。当与像素电路56耦合的扫描线57的电平为高时,则像素电路56处于阈值提取选择阶段;当与像素电路56耦合的扫描线57的电平为低时,则像素电路56处于阈值提取非选择阶段。In the threshold extraction mode, the working process of the pixel circuit 56 is divided into a threshold extraction selection phase and a threshold extraction non-selection phase. When the level of the scan line 57 coupled with the pixel circuit 56 is high, the pixel circuit 56 is in the threshold extraction selection stage; when the level of the scan line 57 coupled with the pixel circuit 56 is low, the pixel circuit 56 is in the threshold value Extract the non-selection phase.
在阈值提取选择阶段,由于总线401控制可控开关411,偏置电流线54耦合到偏置电流源47上,并且提供一个恒定的偏置电流。当与像素电路56耦合的扫描线57变为高电平时,第一晶体管24处于导通状态,使像素电路56处于阈值提取选择阶段。此时,偏置电流线54上的偏置电流通过第一晶体管24给第一电容27充电,存储节点88的电位因此会慢慢升高。由于第二晶体管25的第二控制极耦合到存储节点88,所以第二晶体管25会因存储节点88电位的升高而逐渐由截止状态变为导通状态。第二晶体管25导通以后,偏置电流线54上的偏置电流就会部分流过第二晶体管25的第三电极和第四电极,此流过第二晶体管25的电流大小可以由上述公式(2)表示。由公式(2)可以看出,流经第二晶体管25的电流随存储节点88的电位升高而增大。最后,当IDS2等于偏置电流的时候,偏置电流在像素电路56中完全建立起来,此时存储节点88的电位Vstore可以由上述公式(3)表示,电位Vstore包含了上述第一阈值电压信息及第二阈值电压信息。During the threshold extraction selection phase, since the bus 401 controls the controllable switch 411, the bias current line 54 is coupled to the bias current source 47 and provides a constant bias current. When the scanning line 57 coupled with the pixel circuit 56 becomes high level, the first transistor 24 is in the conduction state, so that the pixel circuit 56 is in the threshold extraction selection stage. At this time, the bias current on the bias current line 54 charges the first capacitor 27 through the first transistor 24 , so the potential of the storage node 88 will gradually increase. Since the second control electrode of the second transistor 25 is coupled to the storage node 88 , the second transistor 25 will gradually change from the off state to the on state due to the increase in the potential of the storage node 88 . After the second transistor 25 is turned on, the bias current on the bias current line 54 will partially flow through the third electrode and the fourth electrode of the second transistor 25, and the magnitude of the current flowing through the second transistor 25 can be obtained by the above formula (2) Representation. It can be seen from formula (2) that the current flowing through the second transistor 25 increases as the potential of the storage node 88 increases. Finally, when I DS2 is equal to the bias current, the bias current is fully established in the pixel circuit 56. At this time, the potential V store of the storage node 88 can be expressed by the above formula (3), and the potential V store includes the above-mentioned first Threshold voltage information and second threshold voltage information.
由(3)可以发现,此时存储节点88的电位包含了第二晶体管25的第一阈值电压信息和有机发光二极管29的第二阈值电压信息。由于存储节点88上的电压和偏置电流线54上的电压值相同,所以此时与偏置电流线54耦合的模拟数字转换器104会采样偏置电流线54上电压信息Vstore并将其转换成数字信号输入到外部存储105中。It can be found from (3) that the potential of the storage node 88 at this time includes the first threshold voltage information of the second transistor 25 and the second threshold voltage information of the organic light emitting diode 29 . Since the voltage on the storage node 88 is the same as the voltage on the bias current line 54, the analog-to-digital converter 104 coupled to the bias current line 54 will sample the voltage information V store on the bias current line 54 and convert it to It is converted into a digital signal and input to the external storage 105 .
在阈值提取选择阶段结束,阈值提取非选择阶段开始时,扫描线57的电平由高电平变为低电平。此电压变化不但使得第一晶体管24由导通状态变为截止状态,还通过第二电容26耦合到存储节点88,使存储节点88的电位变为第一负电位,第二晶体管25在数据输入非选择阶段进入并保持截止状态。When the threshold value extraction selection phase ends and the threshold value extraction non-selection phase begins, the level of the scanning line 57 changes from high level to low level. This voltage change not only makes the first transistor 24 change from the on state to the off state, but also couples to the storage node 88 through the second capacitor 26, so that the potential of the storage node 88 becomes the first negative potential, and the second transistor 25 is in the data input state. The non-selection phase enters and remains cut-off.
在阈值提取非选择阶段,第一晶体管24和第二晶体管25都处于截止状态,偏置电流线54为其他像素电路56提供偏置电流。在阈值提取模式下,所有像素逐行进入阈值提取选择阶段和阈值提取非选择阶段,并且将存储节点88上的第一阈值电压信息及第二阈值电压信息存储到存储芯片105中。In the non-selection phase of threshold value extraction, both the first transistor 24 and the second transistor 25 are in an off state, and the bias current line 54 provides bias current for other pixel circuits 56 . In the threshold extraction mode, all pixels enter the threshold extraction selection stage and the threshold extraction non-selection stage row by row, and store the first threshold voltage information and the second threshold voltage information on the storage node 88 into the memory chip 105 .
发光模式中的驱动过程分为数据输入阶段和发光阶段。在数据输入阶段,由于总线410控制可控开关411,偏置电流线54断开与偏置电流源47的连接,而通过输出缓冲器108耦合到数字模拟转换器107上,用于输出一驱动电压,其驱动电压值为Vdrive。由于加法器106提前将来自总线410的灰度信息与外部存储105中的存储电压进行了叠加,驱动电压Vdrive则会包含在阈值提取模式下的电压信息Vstore和代表灰度信息的数据电压Vdata。当与像素电路56耦合的扫描线57变为高电平时,第一晶体管24处于导通状态,使像素电路56处于数据输入选择阶段。此时,偏置电流线54上的驱动电压Vdrive通过第一晶体管24输入到存储节点88中。The driving process in the lighting mode is divided into a data input phase and a lighting phase. In the data input phase, because the bus 410 controls the controllable switch 411, the bias current line 54 is disconnected from the bias current source 47, and is coupled to the digital-to-analog converter 107 through the output buffer 108 for outputting a drive voltage, and its driving voltage value is V drive . Since the adder 106 superimposes the grayscale information from the bus 410 and the storage voltage in the external storage 105 in advance, the driving voltage V drive will include the voltage information V store in the threshold value extraction mode and the data voltage representing the grayscale information V data . When the scanning line 57 coupled with the pixel circuit 56 becomes high level, the first transistor 24 is in the conduction state, so that the pixel circuit 56 is in the data input selection phase. At this moment, the driving voltage V drive on the bias current line 54 is input into the storage node 88 through the first transistor 24 .
此时,存储节点88的电荷量可以表示为:At this time, the charge amount of the storage node 88 can be expressed as:
QA=(Vdrive-V0)C1+(Vdrive-VH)C2+(Vdrive-VOLED-Vth2)Cg2……(10)Q A =(V drive -V 0 )C1+(V drive -V H )C2+(V drive -V OLED -V th2 )C g2 …(10)
其中,VH为数据输入选择阶段扫描信号的电平值,V0是数据输入阶段公共节点的电压值,Cg2为第二晶体管的栅电容,C1和C2分别为第一电容26和第二电容27的电容值。Among them, V H is the level value of the scan signal in the data input selection phase, V 0 is the voltage value of the common node in the data input phase, C g2 is the gate capacitance of the second transistor, C1 and C2 are the first capacitor 26 and the second transistor respectively. The capacitance value of the capacitor 27.
在数据输入选择阶段结束,数据输入非选择阶段开始时,扫描线57由高电平变为低电平,此电压变化不但使得第一晶体管24由导通状态变为截止状态,还通过第二电容26耦合到存储节点88,使存储节点88的电位变为第二负电位,第二晶体管25在数据输入非选择阶段进入并保持截止状态。When the data input selection phase ends and the data input non-selection phase begins, the scanning line 57 changes from a high level to a low level. This voltage change not only makes the first transistor 24 change from the on state to the off state, but also passes the second The capacitor 26 is coupled to the storage node 88, so that the potential of the storage node 88 becomes a second negative potential, and the second transistor 25 enters and maintains a cut-off state during the data input non-selection phase.
在数据输入非选择阶段,第一晶体管24和第二晶体管25都处于截止状态,偏置电流线54为其他像素提供驱动电压。In the data input non-selection stage, both the first transistor 24 and the second transistor 25 are in an off state, and the bias current line 54 provides driving voltage for other pixels.
在上述数据输入阶段,所有像素逐行进入数据输入选择阶段和数据输入非选择阶段,并且将第二晶体管25的第一阈值电压信息、有机发光二极管29的第二阈值电压信息及灰度信息作为基准电压存储到各个像素的存储节点88中。在数据输入阶段,公共节点83一直保持为一恒定电位V0。In the above-mentioned data input stage, all pixels enter the data input selection stage and the data input non-selection stage row by row, and use the first threshold voltage information of the second transistor 25, the second threshold voltage information and grayscale information of the organic light emitting diode 29 as The reference voltage is stored in the storage node 88 of each pixel. During the data input phase, the common node 83 is always kept at a constant potential V 0 .
在数据输入阶段过后,紧接着是发光阶段。在发光阶段,由于总线410控制可控开关411,偏置电流线54断开与输出缓冲器108的连接,而耦合到电压源45上,此电压源45为所有与偏置电流线54耦合的像素电路提供恒定的电源电压。此时公共节点83的电位也由原来的恒定电位V0变为参考电位,参考电位的电压值为Vref。公共节点83上电位的变动会通过第一电容27耦合到存储节点88中,使得存储节点88的电位变为VHIGH。需要注意的一点是,在数据输入非选择阶段和发光阶段,存储节点88处于悬浮状态,其中的电荷量没有变化。其在发光阶段可以表示为:After the data input phase, the light phase follows. In the lighting phase, since the bus 410 controls the controllable switch 411, the bias current line 54 is disconnected from the output buffer 108 and coupled to the voltage source 45, which is the source of all voltage sources coupled to the bias current line 54. The pixel circuit provides a constant supply voltage. At this time, the potential of the common node 83 also changes from the original constant potential V 0 to the reference potential, and the voltage value of the reference potential is V ref . The change of the potential on the common node 83 will be coupled to the storage node 88 through the first capacitor 27, so that the potential of the storage node 88 becomes V HIGH . One point to be noted is that during the data input non-selection phase and the light-emitting phase, the storage node 88 is in a floating state, and the amount of charge therein does not change. It can be expressed as:
QA=(VHIGH-VL)C2+(VHIGH-Vref)C1+(VHIGH-VOLED-VTH2)Cg2……(11)Q A =(V HIGH -V L )C2+(V HIGH -V ref )C1+(V HIGH -V OLED -V TH2 )C g2 ... (11)
其中,VL是数据输入非选择阶段扫描信号的电压值。将公式(10)代入到公式(11)中,可以求得VHIGH的表达式为:Among them, V L is the voltage value of the scanning signal in the data input non-selection stage. Substituting formula (10) into formula (11), the expression of V HIGH can be obtained as:
其中,VOVERDRIVE是第二晶体管25的过驱动电压,其值与第二晶体管25的第一阈值电压或有机发光二极管29的第二阈值电压无关。Wherein, V OVERDRIVE is the overdrive voltage of the second transistor 25 , and its value has nothing to do with the first threshold voltage of the second transistor 25 or the second threshold voltage of the OLED 29 .
由公式(12)可以推出,在发光阶段,有机发光二极管29上流过的电流为:From formula (12), it can be deduced that in the light-emitting stage, the current flowing through the organic light-emitting diode 29 is:
IOLED=1/2μnCoxW/L(VHIGH-VOLED-VTH2)2=1/2μnCoxW/L(VOVERDRIVE)2……(13)I OLED =1/2μ n C ox W/L(V HIGH -V OLED -V TH2 ) 2 =1/2μ n C ox W/L(V OVERDRIVE ) 2 ……(13)
由公式(13),可以发现,在发光阶段,有机发光二极管29上所流过的电流IOLED与第二晶体管25的第一阈值电压以及有机发光二极管29的第二阈值电压无关,即可以补偿由这两种元件阈值电压变化引起的显示的不均匀性,另一方面,由于上述驱动电流IOLED与第二晶体管25的第一阈值电压无关,则可以补偿因TFT器件采用多晶硅材料制成而导致面板各处TFT器件的阈值电压VTH不均匀性,保证了显示面板上的显示的均匀性。From formula (13), it can be found that in the light-emitting phase, the current I OLED flowing through the organic light-emitting diode 29 has nothing to do with the first threshold voltage of the second transistor 25 and the second threshold voltage of the organic light-emitting diode 29 , that is, it can compensate The non-uniformity of display caused by the threshold voltage variation of these two elements, on the other hand, because the above-mentioned driving current IOLED has nothing to do with the first threshold voltage of the second transistor 25, then it can compensate for the TFT device being made of polysilicon material. As a result, the threshold voltage V TH of the TFT devices in various parts of the panel is non-uniform, which ensures the uniformity of the display on the display panel.
本实施例三的优势在于,相对于实施例一、二而言,由于通过采用外部补偿方式,只需在开机时执行一次阈值提取模式,其他时间内显示装置可均工作在发光模式下;并且数据写入过程(即发光模式下的数据输入阶段)中,不需要偏置电流,而直接采用驱动电压将上述第一阈值电压信息、第二阈值电压信息及灰度信息加载于存储节点88上,采用电压编程方式可以大大降低数据写入的时间,从而增加发光时间所占帧比重。使得像素电路可以用于更高分辨率或更大面积的显示装置中。另外,采用外部补偿的方式可以简化像素结构,减少控制线的数目。The advantage of the third embodiment is that, compared with the first and second embodiments, by adopting the external compensation method, the threshold value extraction mode only needs to be executed once when starting up, and the display device can work in the light-emitting mode at other times; and In the data writing process (that is, the data input phase in the light-emitting mode), no bias current is required, and the driving voltage is directly used to load the above-mentioned first threshold voltage information, second threshold voltage information and grayscale information on the storage node 88 , using the voltage programming method can greatly reduce the data writing time, thereby increasing the proportion of the light-emitting time in the frame. The pixel circuit can be used in a display device with higher resolution or larger area. In addition, the use of external compensation can simplify the pixel structure and reduce the number of control lines.
实施例四:Embodiment four:
请参考图11,与实施例三的区别主要在于,显示装置中,栅极驱动电路52还提供一与扫描线电平相反的控制线64,而像素电路56中去除了第二电容26,类似于将实施例二与实施例三相结合。像素电路、显示装置及显示驱动方法在此处不再赘述。Please refer to FIG. 11 , the main difference from the third embodiment is that in the display device, the gate drive circuit 52 also provides a control line 64 with the level opposite to that of the scanning line, and the second capacitor 26 is removed from the pixel circuit 56, similar to In combination of embodiment two and embodiment three. The pixel circuit, display device and display driving method will not be repeated here.
需要说明的是:It should be noted:
1、在显示装置的其他实施例中,在上述数据输入选择阶段,存储节点上的电压和偏置电流线54上的电压是相同的,这个电压比电压源45提供的电压要小很多。因此,在新的一帧来临时,偏置电流线54上的电位就需要被快速拉低以建立上述偏置电流,为了加速这个过程,可以为每一列设置一个预充电电源46,偏置电流源47、电压源45、预充电电源46通过可控开关411与偏置电流线54耦合。如图12所示,这个预充电电源46的电压Vpre为:1. In other embodiments of the display device, the voltage on the storage node is the same as the voltage on the bias current line 54 during the above data input selection phase, which is much lower than the voltage provided by the voltage source 45 . Therefore, when a new frame comes, the potential on the bias current line 54 needs to be pulled down quickly to establish the above-mentioned bias current. In order to speed up this process, a pre-charge power supply 46 can be set for each column, and the bias current Source 47 , voltage source 45 , precharge power source 46 are coupled to bias current line 54 through controllable switch 411 . As shown in FIG. 12, the voltage Vpre of this pre-charging power supply 46 is:
这里,VTH20和VOLED0分别是第二晶体管的初始阈值和有机发光二极管的初始偏置电位。预充电电源46仅需要在帧初始时连接到偏置电流线54上很短的时间,就可以将偏置电流线54上多余的电荷放掉。Here, V TH20 and V OLED0 are the initial threshold of the second transistor and the initial bias potential of the OLED, respectively. The precharge power supply 46 only needs to be connected to the bias current line 54 for a short time at the beginning of the frame to discharge the excess charge on the bias current line 54 .
2、上述数据驱动电路可以集成在显示面板上,也可以集成外围IC芯片中,然后贴合到显示面板上。2. The above-mentioned data driving circuit can be integrated on the display panel, or integrated into a peripheral IC chip, and then bonded to the display panel.
3、虽然像素电路56采用了有机发光二极管作为发光元件,在另外的实施例中,也可以采用其他发光二极管作为发光元件。3. Although the pixel circuit 56 uses organic light emitting diodes as light emitting elements, in other embodiments, other light emitting diodes may also be used as light emitting elements.
4、在实施例一和实施例三中,第二电容26可以通过增大第一晶体管的控制极和第二电极的交叠面积来实现,也可以制作单独的电容原件。4. In Embodiment 1 and Embodiment 3, the second capacitor 26 can be realized by increasing the overlapping area of the control electrode of the first transistor and the second electrode, or a separate capacitor element can be made.
5、在本申请各实施例中,晶体管可由氧化物薄膜晶体管构成,也可由多晶硅或非晶硅薄膜晶体管构成。5. In each embodiment of the present application, the transistor may be formed of an oxide thin film transistor, or may be formed of a polysilicon or an amorphous silicon thin film transistor.
6、在其他实施例中,时序控制电路也可以不集成于总线中,而主要由总线提供灰度信息,时序控制电路单独控制可控开关。6. In other embodiments, the timing control circuit may not be integrated into the bus, but the grayscale information is mainly provided by the bus, and the timing control circuit independently controls the controllable switch.
本申请各实施例采用两TFT器件构建像素电路,其电路结构简单,不仅可以补偿TFT器件的阈值电压漂移,也可以补偿OLED器件7的阈值漂移,保证了显示的均匀性。此外,现有技术中,当TFT器件的阈值电压变为负值时,传统的电压型阈值补偿电路就无法再提供补偿,而本申请各实施例中采用电流偏置方式对正负阈值电压都有很好的补偿作用,因此具有更加优越的效果,这一点在采用耗尽型晶体管作为驱动管的显示装置中极为有利。Each embodiment of the present application adopts two TFT devices to build a pixel circuit, and the circuit structure is simple, which can not only compensate the threshold voltage drift of the TFT device, but also compensate the threshold voltage drift of the OLED device 7 to ensure the uniformity of display. In addition, in the prior art, when the threshold voltage of the TFT device becomes negative, the traditional voltage-type threshold compensation circuit can no longer provide compensation. It has a very good compensation effect, so it has a more superior effect, which is extremely beneficial in a display device that uses a depletion transistor as a driving tube.
以上内容是结合具体的实施方式对本申请所作的进一步详细说明,不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说,在不脱离本申请构思的前提下,还可以做出若干简单推演或替换。The above content is a further detailed description of the present application in conjunction with specific implementation modes, and it cannot be deemed that the specific implementation of the present application is limited to these descriptions. For those of ordinary skill in the technical field to which the present application belongs, some simple deduction or replacement can also be made without departing from the concept of the present application.
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CN103400546B (en) | 2013-07-25 | 2015-08-12 | 合肥京东方光电科技有限公司 | A kind of array base palte and driving method, display device |
CN103440846A (en) | 2013-08-29 | 2013-12-11 | 京东方科技集团股份有限公司 | Pixel drive units, drive method thereof, and pixel circuit |
CN104778915B (en) * | 2014-01-15 | 2017-05-24 | 北京大学深圳研究生院 | Display device and pixel circuit and display driving method thereof |
CN105139802A (en) * | 2015-09-10 | 2015-12-09 | 中国科学院上海高等研究院 | AMOLED pixel driving circuit and method realizing voltage and current mixed programming |
CN106157895B (en) * | 2016-07-04 | 2019-07-16 | 上海天马有机发光显示技术有限公司 | A kind of organic light emitting display panel and its driving method |
KR102650339B1 (en) * | 2016-12-27 | 2024-03-21 | 엘지디스플레이 주식회사 | Electro-luminecense display apparatus |
CN107424564B (en) * | 2017-08-07 | 2020-09-04 | 北京大学深圳研究生院 | Pixel device, driving method for pixel device, and display device |
WO2021075028A1 (en) * | 2019-10-17 | 2021-04-22 | シャープ株式会社 | Display device |
CN111583872B (en) | 2020-06-11 | 2021-03-12 | 京东方科技集团股份有限公司 | Pixel compensation device, pixel compensation method and display device |
TWI793862B (en) * | 2021-11-16 | 2023-02-21 | 友達光電股份有限公司 | Pixel structure and formation method thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1705001A (en) * | 2004-06-02 | 2005-12-07 | 索尼株式会社 | Pixel circuit, active matrix apparatus and display apparatus |
CN1713253A (en) * | 2004-06-22 | 2005-12-28 | 三星电子株式会社 | Display and driving method thereof |
CN1742308A (en) * | 2003-01-24 | 2006-03-01 | 皇家飞利浦电子股份有限公司 | Active matrix electroluminescent display devices |
CN1742309A (en) * | 2003-01-24 | 2006-03-01 | 皇家飞利浦电子股份有限公司 | Active matrix display devices |
CN1989539A (en) * | 2005-03-31 | 2007-06-27 | 卡西欧计算机株式会社 | Display drive apparatus, display apparatus and drive control method thereof |
CN102473376A (en) * | 2009-07-10 | 2012-05-23 | 夏普株式会社 | Display device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI346922B (en) * | 2006-06-14 | 2011-08-11 | Au Optronics Corp | Structure of pixel circuit for display and mothod of driving thereof |
-
2013
- 2013-01-25 CN CN201310029695.1A patent/CN103117040B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1742308A (en) * | 2003-01-24 | 2006-03-01 | 皇家飞利浦电子股份有限公司 | Active matrix electroluminescent display devices |
CN1742309A (en) * | 2003-01-24 | 2006-03-01 | 皇家飞利浦电子股份有限公司 | Active matrix display devices |
CN1705001A (en) * | 2004-06-02 | 2005-12-07 | 索尼株式会社 | Pixel circuit, active matrix apparatus and display apparatus |
CN1713253A (en) * | 2004-06-22 | 2005-12-28 | 三星电子株式会社 | Display and driving method thereof |
CN1989539A (en) * | 2005-03-31 | 2007-06-27 | 卡西欧计算机株式会社 | Display drive apparatus, display apparatus and drive control method thereof |
CN102473376A (en) * | 2009-07-10 | 2012-05-23 | 夏普株式会社 | Display device |
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