CN103022275B - 发光二极管的封装方法 - Google Patents
发光二极管的封装方法 Download PDFInfo
- Publication number
- CN103022275B CN103022275B CN201110285443.6A CN201110285443A CN103022275B CN 103022275 B CN103022275 B CN 103022275B CN 201110285443 A CN201110285443 A CN 201110285443A CN 103022275 B CN103022275 B CN 103022275B
- Authority
- CN
- China
- Prior art keywords
- electrode
- cover layer
- light
- conductive frame
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 title abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 238000005538 encapsulation Methods 0.000 claims abstract description 16
- 230000005496 eutectics Effects 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
Description
Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110285443.6A CN103022275B (zh) | 2011-09-23 | 2011-09-23 | 发光二极管的封装方法 |
TW100134683A TWI455367B (zh) | 2011-09-23 | 2011-09-26 | 發光二極體的封裝方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110285443.6A CN103022275B (zh) | 2011-09-23 | 2011-09-23 | 发光二极管的封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103022275A CN103022275A (zh) | 2013-04-03 |
CN103022275B true CN103022275B (zh) | 2015-05-20 |
Family
ID=47970629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110285443.6A Expired - Fee Related CN103022275B (zh) | 2011-09-23 | 2011-09-23 | 发光二极管的封装方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103022275B (zh) |
TW (1) | TWI455367B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI509843B (zh) * | 2013-10-23 | 2015-11-21 | Opto Tech Corp | 發光二極體的封裝結構 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101621101A (zh) * | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050034936A (ko) * | 2003-10-10 | 2005-04-15 | 삼성전기주식회사 | 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법 |
JP2005294736A (ja) * | 2004-04-05 | 2005-10-20 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
US8044418B2 (en) * | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
TW200834968A (en) * | 2007-02-13 | 2008-08-16 | Harvatek Corp | Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby |
US20080246397A1 (en) * | 2007-04-04 | 2008-10-09 | Bily Wang | Manufacturing method of white light led and structure thereof |
JP5500904B2 (ja) * | 2009-08-11 | 2014-05-21 | シチズン電子株式会社 | 発光装置の製造方法 |
-
2011
- 2011-09-23 CN CN201110285443.6A patent/CN103022275B/zh not_active Expired - Fee Related
- 2011-09-26 TW TW100134683A patent/TWI455367B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101621101A (zh) * | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103022275A (zh) | 2013-04-03 |
TWI455367B (zh) | 2014-10-01 |
TW201314962A (zh) | 2013-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5106813B2 (ja) | 色変換型発光ダイオード | |
TWI528508B (zh) | 高功率發光二極體陶瓷封裝之製造方法 | |
TWI328293B (en) | Light emitting diode and wafer level package method, wafer level bonding method thereof and circuit structure for wafer level package | |
CN103123949A (zh) | 可挠式发光二极管封装结构及其制造方法 | |
JP2009033081A (ja) | 発光ダイオード装置 | |
US8216864B2 (en) | LED device and packaging method thereof | |
US20120268916A1 (en) | Light emitting device package and method of manufacturing the same | |
CN104393154A (zh) | 一种led芯片级白光光源的晶圆级封装方法 | |
CN102881812B (zh) | 发光二极管封装结构的制造方法 | |
CN106356441A (zh) | 发光二极管封装结构 | |
CN103236490B (zh) | Led倒装芯片封装器件、其制造方法及使用其的封装结构 | |
WO2018023027A1 (en) | Light emitting device package with reflective side coating | |
CN102760822B (zh) | 发光二极管封装结构及其制造方法 | |
KR20130077069A (ko) | Led 패키지의 제조방법 | |
CN104409615A (zh) | 倒装led芯片、倒装led芯片封装体及其制作方法 | |
CN103972372A (zh) | 发光二极管封装结构 | |
TWI528596B (zh) | 發光二極體封裝結構及其製造方法 | |
CN103022275B (zh) | 发光二极管的封装方法 | |
KR20130077059A (ko) | Led 패키지 및 그 제조방법 | |
CN208157452U (zh) | 一种倒装led发光器件 | |
CN103855280B (zh) | 一种led晶片级封装方法 | |
CN105826447A (zh) | 封装结构及其制法 | |
TWI425676B (zh) | 半導體封裝結構 | |
CN103855282A (zh) | 一种led | |
CN103236486B (zh) | Led封装方法、封装结构及使用该封装结构的led灯 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160728 Address after: 226371 Jiangsu city of Nantong province Tongzhou District Xing Dong Zhen Sun Li Qiao Cun West eight groups Patentee after: NANTONG JIEJING SEMICONDUCTOR TECHNOLOGY CO.,LTD. Address before: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Patentee before: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Packaging method of LED Effective date of registration: 20210916 Granted publication date: 20150520 Pledgee: Jiangsu Zaibao South communication Financing Guarantee Co.,Ltd. Pledgor: NANTONG JIEJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: Y2021980009417 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20220920 Granted publication date: 20150520 Pledgee: Jiangsu Zaibao South communication Financing Guarantee Co.,Ltd. Pledgor: NANTONG JIEJING SEMICONDUCTOR TECHNOLOGY CO.,LTD. Registration number: Y2021980009417 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150520 |
|
CF01 | Termination of patent right due to non-payment of annual fee |