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CN101621101A - 发光二极管及其制造方法 - Google Patents

发光二极管及其制造方法 Download PDF

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Publication number
CN101621101A
CN101621101A CN200810302460A CN200810302460A CN101621101A CN 101621101 A CN101621101 A CN 101621101A CN 200810302460 A CN200810302460 A CN 200810302460A CN 200810302460 A CN200810302460 A CN 200810302460A CN 101621101 A CN101621101 A CN 101621101A
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Prior art keywords
emitting diode
substrate
light emitting
bonding layer
groove
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CN200810302460A
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Inventor
陈东安
徐智鹏
张忠民
李泽安
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ADVANCED DEVELOPMENT PHOTOELECTRIC Co Ltd
Zhanjing Technology Shenzhen Co Ltd
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ADVANCED DEVELOPMENT PHOTOELECTRIC Co Ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to CN200810302460A priority Critical patent/CN101621101A/zh
Priority to US12/487,821 priority patent/US20090321778A1/en
Publication of CN101621101A publication Critical patent/CN101621101A/zh
Pending legal-status Critical Current

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Abstract

本发明涉及一种发光二极管及其制造方法。所述发光二极管包括：一个基板；一个发光二极管晶片，其覆晶接合在该基板上；一个接合层，其设置在该基板与该发光二极管晶片之间用以接合该基板与该发光二极管晶片并使二者电性导通。该基板的与该发光二极管晶片相接合的表面具有至少一个凹槽，该接合层设置在该至少一个凹槽上。所述发光二极管中的接合层设置在该基板的凹槽中，使得发光二极管晶片与基板通过的接合层接合的较为稳固，并且该接合层不易产生移位，保证了发光二极管晶片与基板具有较好的电连接性能。

Description

发光二极管及其制造方法
技术领域
本发明涉及一种发光二极管及制造方法，特别涉及一种覆晶式发光二极管及其制造方法。
背景技术
现有的发光二极管(Light Emitting Diode，LED)的晶片(chip)与基板(substrate)的电性接合方式一般包括打线接合(Wire Bonding)与覆晶接合(Flip-chip bonding)两种。参见图1，一种晶片与基板覆晶接合的发光二极管50，其包括封装壳体51、基板52及晶片53。封装壳体51具有一容置槽510，基板52设置在容置槽510底部。晶片53具有电极的一面通过接合层54与基板52接合。接合层54可为金属凸块(如金凸块)或焊料凸块(Solder Bump)等接合物质。晶片53的电极与基板52通过接合层54相接合，而晶片53的出光面530位于基板52的上方，从而可以避免晶片53的电极遮蔽出光面530出光以提高出光率。另外，覆晶式发光二极管50还具有较高的散热效率及较小的封装体积。
然而，接合层54与基板52、以及晶片53的电极接合不够牢固，晶片53容易相对基板52产生移位，从而造成晶片53与基板52电连接性能不佳。另外，在覆晶式发光二极管50的制造过程中，接合层54在基板52与晶片53之间会产生接点移位，造成接合良率不佳的情形。因此，有必要提供一种晶片与基板通过接合层稳固接合的发光二极管及其制造方法。
发明内容
以下将以实施例说明一种晶片与基板通过接合层稳固接合的发光二极管及其制造方法。
一种发光二极管，其包括：一个基板；一个发光二极管晶片，其覆晶接合在该基板上；一个接合层，其设置在该基板与该发光二极管晶片之间用以接合该基板与该发光二极管晶片并使二者电性导通。该基板的与该发光二极管晶片相接合的表面具有至少一个凹槽，该接合层设置在该至少一个凹槽上。
一种发光二极管的制造方法，包括：提供一发光二极管晶片与一具有至少一凹槽的基板；提供一第一接合层并使其与该发光二极管晶片相接合；提供一第二接合层并将其设置在该基板的至少一凹槽中；将该发光二极管晶片压向该基板，使该第一接合层与该第二接合层相接触；加热该第一接合层与该第二接合层直至二者结合为一体。
与现有技术相比，上述发光二极管及其制造方法中基板的与发光二极管晶片相接合的表面具有至少一个凹槽，接合层设置在该至少一个凹槽中，发光二极管晶片通过接合层覆晶接合在基板上，使得发光二极管晶片与基板通过接合层接合的较为稳固，并且接合层不易产生移位，保证了发光二极管晶片与基板具有较好的电连接性能。
附图说明
图1为一种现有的覆晶式发光二极管的截面示意图。
图2为本发明第一实施例提供的发光二极管的截面示意图。
图3为本发明第二实施例提供的发光二极管的截面示意图。
图4为本发明第三实施例提供的发光二极管的截面示意图。
图5为本发明第四实施例提供的发光二极管的截面示意图。
图6至图12为本发明第五实施例提供的发光二极管的制造方法的流程示意图。
具体实施方式
下面结合附图对本发明作进一步的详细说明。
请参见图2，本发明第一实施例提供的发光二极管10，其包括封装壳体(Housing)11，基板12，发光二极管晶片13，接合层14，封装层15。
封装壳体11具有一容置槽110。封装壳体11所用材料为绝缘材料，例如液晶聚合物(Liquid Crystal Polymer)、塑料等。
基板12设置在容置槽110的底部，其用于承载发光二极管晶片13。基板12与外部电源(图未示)相连，使外部电源通过基板12传导驱动电流至发光二极管晶片13。基板12为一导线架(Lead Frame)，其所用材料为高导电性材料，例如金、银、铜等金属。基板12的暴露在容置槽110底部的表面121上具有一第一凹槽122及一与第一凹槽122并列设置的第二凹槽123。第一凹槽122与第二凹槽123均为一立方体凹槽。可以理解的是，第一凹槽122与第二凹槽123也可为其它形状的凹槽，如半球形凹槽等。
发光二极管晶片13为一半导体发光元件，其可为氮化镓(GaN)，氮化铝铟镓(AlInGaN)，砷化镓(GaAs)，磷化镓(GaP)，磷化铝铟镓(AlInGaP)等发光二极管晶片。驱动电流流过发光二极管晶片13时可使其发出特定波长的光。以氮化镓发光二极管晶片为例，其包含蓝宝石层(Sapphire)，氮化镓过渡层(Buffer)，N型氮化镓层，多重量子阱(Multiple Quantum Well，MQW)发光层，P型氮化镓层，第一电极层及第二电极层。在本实施例中，发光二极管晶片13为一氮化镓发光二极管晶片，其设置在容置槽110中且覆晶接合于基板12，即发光二极管晶片13的第一电极131与第二电极132位于发光二极管晶片13的同一侧且通过接合层14与基板12相接合。
接合层14设置在基板12与发光二极管晶片13之间，用以接合基板12与发光二极管晶片13并使二者电性导通。接合层14为金属块(如金块)或焊料块(锡块)。根据基板12的材料及发光二极管的制程条件，可选择不同的锡块种类，例如高熔点的95％铅-5％锡合金，或低熔点的51％铟-32.5％铋-16.5％锡合金、63％铅-37％锡合金、50％铅-50％铟合金等。在本实施例中，接合层14包括第一焊料块141与第二焊料块142，其均为51％铟-32.5％铋-16.5％锡合金。第一焊料块141部分嵌入基板12的第一凹槽122内并与发光二极管晶片13的第一电极131相连，第二焊料块142部分嵌入在基板12的第二凹槽123内并与发光二极管晶片13的第二电极132相连。由于接合层14所包括的第一焊料块141与第二焊料块142分别设置在第一凹槽122与第二凹槽123内，使得发光二极管晶片13与基板12通过接合层14接合的较为稳固，并且接合层14不易产生移位，保证了发光二极管晶片13与基板12具有较好的电连接性能。在此，接合层14的平行于基板12的表面121的横截面积小于第一凹槽122及第二凹槽123的平行于基板12的表面121的横截面积，即第一焊料块141、第二焊料块142的平行于基板12的表面121横截面积分别小于第一凹槽122及第二凹槽123的平行于基板12的表面121横截面积。
封装层15设置在设置在容置槽110中用以覆盖发光二极管晶片13。封装层15可为硅胶等透明胶体。发光二极管10还可进一步包括光波长转换物质16，例如荧光粉。光波长转换物质16掺杂在封装层15中，用以对发光二极管晶片13发出的特定波长进行光色转换，使得发光二极管10发出白光或多色光。
参见图3，本发明第二实施例提供的发光二极管20，其与上述第一实施例所提供的发光二极管10基本相同，不同之处在于：基板22包括一绝缘层221及一设置在绝缘层221上的导电层222。导电层222位于与发光二极管晶片13相邻的一侧。发光二极管晶片13通过与接合层14与导电层222电性连接。绝缘层221所用材料可为陶瓷，硅，氮化铝，氮化硼或碳化硅。导电层222所用材料可为金、银、铜等。可以理解的是，基板22还可为金属芯电路板(Metalcore PCB，MCPCB)或铝基板(Aluminum Substrate)等。
参见图4，本发明第三实施例提供的发光二极管30，其与上述第一实施例所提供的发光二极管10基本相同，不同之处在于：发光二极管30进一步包括接着胶层35。
接着胶层35设置在发光二极管晶片13与基板12之间除了由接合层14接合以外的空隙处，使得发光二极管晶片13通过接合层14与基板12电性导通之外的部位不会与基板12电性导通，以避免造成短路或电极击穿等现象而损坏发光二极管晶片13。接着胶层35还可用以提高发光二极管晶片13与基板12接合过程的稳定性，以提升接合过程的良率。接着胶层35为一柔性胶质绝缘材料，如高分子绝缘胶、助焊剂(flux)、非导电性固晶胶等。
参见图5，本发明第四实施例提供的发光二极管40，其与上述第二实施例所提供的发光二极管20基本相同，不同之处在于：发光二极管40进一步包括接着胶层35。接着胶层35设置在设置在发光二极管晶片13与基板22的导电层222之间除了由通过接合层14接合以外的空隙处。
参见图6至图12，本发明第五实施例提供的发光二极管30的制造方法，包括以下步骤：
如图6所示，提供一发光二极管晶片13与一接合层17。接合层17包括第一焊料块171与第二焊料块172。第一焊料块171的一端为半球形，第二焊料块172的一端为锥形。接合层17的形成方式主要有蒸镀、沉积、焊料印刷或电镀法等。
如图7所示，将接合层17与发光二极管晶片13接合。在此，将第一焊料块171的与其半球形端部相对的一端与发光二极管晶片13的第一电极131接合，将第二焊料块172的与其锥形端部相对的一端与发光二极管晶片13的第二电极132接合。
如图8所示，提供一基板12，基板12的一表面具有第一凹槽122与第二凹槽123。第一凹槽122与第二凹槽123的平行于基板12的表面121的横截面积分别大于第一焊料块171、第二焊料块172的横截面积。
如图9所示，将接合物质置入基板12的第一凹槽122与第二凹槽123内以形成接合层18。接合层18与接合层17为同一物质。第一凹槽122与第二凹槽123的平行于基板12的表面121的横截面积分别大于第一焊料块171、第二焊料块172的横截面积，有利于接合层17与接合层18相接合。
如图10所示，将一接着胶层35设置在基板12的表面以覆盖第一凹槽122，第二凹槽123及接合层18。接着胶层35的形成方法可为印刷、涂布、点胶等。
如图11所示，发光二极管晶片13及与其连结的接合层17下压在基板12上的接合层18。在此，第一焊料块171的半球形端部压入第一凹槽122内的接合层18，第二焊料块172的锥形端部压入第二凹槽123内的接合层18。由于接合层17与接合层18为一硬性材料，其硬度比由柔性胶质材料构成的接着胶层35大，因此，发光二极管晶片13及与其连结的接合层17的下压过程中，会将接着胶层35往周围排开使得接合层17与接合层18直接接触。第一焊料块171与第二焊料块172分别具有半球形端部与锥形端部，从而有利于接合层17与接合层18相接合。
如图12所示，通过温度控制以使接合层17与接合层18形成熔融态，使得接合层17插入接合层18内部以结合为一体以接合发光二极管晶片13与基板12。此时，接着胶层35分布在发光二极管晶片13与基板12间除了由接合层17与接合层18接合之外的空隙处。接着胶层35还可防止接合层17与接合层18融合为一体前因外力作用造成二者间滑动移位，避免接合层17与接合层18对位不精准而造成良率降低。
另外，本领域技术人员还可于本发明精神内做其它变化，例如：上述实施例所提供的发光二极管包括多个发光二极管晶片，多个与其对应的基板以及多个分别设置在该多个发光二极管晶片与该多个基板之间的接合层，只要其不偏离本发明的技术效果，这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (11)

1.一种发光二极管，其包括：
一个基板；
一个发光二极管晶片，其覆晶接合在该基板上；
一个接合层，其设置在该基板与该发光二极管晶片之间用以接合该基板与该发光二极管晶片并使二者电性导通；
其特征在于，该基板的与该发光二极管晶片相接合的表面具有至少一个凹槽，该接合层设置在该至少一个凹槽上。
2.如权利要求1所述的发光二极管，其特征在于：该发光二极管进一步包括一具有容置槽的封装壳体，该基板设置在该容置槽的底部。
3.如权利要求1所述的发光二极管，其特征在于：该基板为导线架，金属芯电路板或铝基板。
4.如权利要求1所述的发光二极管，其特征在于：该基板包括绝缘层及设置在该绝缘层上的导电层，该发光二极管晶片通过该接合层与该导电层电性连接。
5.如权利要求1所述的发光二极管，其特征在于：该接合层包括第一焊料块与第二焊料块，该基板的与该发光二极管晶片相接合的表面具有一个第一凹槽及一个与该第一凹槽并列设置的第二凹槽，该第一焊料块与该第二焊料块分别设置在该第一凹槽与该第二凹槽内。
6.如权利要求1所述的发光二极管，其特征在于：该至少一个凹槽的平行于该基板的与该发光二极管晶片相接合的表面的横截面积大于该接合层的平行于该基板的与该发光二极管晶片相接合的表面的横截面积。
7.如权利要求1所述的发光二极管，其特征在于：该发光二极管进一步包括一封装层，该封装层设置在该容置槽中用以覆盖该发光二极管晶片。
8.如权利要求1所述的发光二极管，其特征在于：该发光二极管进一步包括一接着胶层，该接着胶层设置在该发光二极管晶片与该基板之间除了由该接合层接合以外的空隙处。
9.一种发光二极管的制造方法，包括：
提供一发光二极管晶片与一具有至少一凹槽的基板；
提供一第一接合层并使其与该发光二极管晶片相接合；
提供一第二接合层并将其设置在该基板的至少一凹槽中；
将该发光二极管晶片压向该基板，使该第一接合层与该第二接合层相接触；
加热该第一接合层与该第二接合层直至二者结合为一体。
10.如权利要求9所述的发光二极管的制造方法，其特征在于：在将该发光二极管晶片压向该基板之前，提供一接着胶层，先将该接着胶层设置在该基板上以覆盖该至少一凹槽及该第二接合层。
11.如权利要求9所述的发光二极管的制造方法，其特征在于：第一接合层用与该第二接合层相接触的端部为锥形和半球形中至少一者。
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