CN102820433B - The anti-reflection structure of OLED - Google Patents
The anti-reflection structure of OLED Download PDFInfo
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- CN102820433B CN102820433B CN201210320027.XA CN201210320027A CN102820433B CN 102820433 B CN102820433 B CN 102820433B CN 201210320027 A CN201210320027 A CN 201210320027A CN 102820433 B CN102820433 B CN 102820433B
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- 239000010405 anode material Substances 0.000 claims abstract description 32
- 239000010406 cathode material Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 206
- 239000000463 material Substances 0.000 claims description 108
- 239000002346 layers by function Substances 0.000 claims description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 229910021389 graphene Inorganic materials 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims description 14
- 238000010276 construction Methods 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 abstract description 4
- 238000000605 extraction Methods 0.000 abstract description 3
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 13
- 238000002310 reflectometry Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
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- 230000005540 biological transmission Effects 0.000 description 2
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- 230000005525 hole transport Effects 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention provides the anti-reflection structure of a kind of OLED, to increase an antireflection layer at the negative electrode of top-illuminating OLED or on the anode of end illuminating OLED, and make the refractive index of this antireflection layer between the refractive index of its upper and lower two layer medium, thus improve light extraction efficiency, improve the performance of OLED. In the time that described antireflection layer is positioned on the negative electrode of top-illuminating OLED, it can be arranged on cathode material layer top or below; In the time that described antireflection layer is positioned on the anode of end illuminating OLED, it can be arranged on anode material layer top or below, all can reach antireflective effect.
Description
Technical field
The present invention relates to the male or female structure of a kind of OLED, can be applied to top luminous or the end is luminousIn AMOLED structure.
Background technology
Compare present main flow flat panel display Thin Film Transistor-LCD (TFT-LCD), active squareBattle array organic light emitting diode display (AMOLED) has high-contrast, wide viewing angle, low-power consumption, gentlier moreThe advantage such as thin, is expected to become the flat panel display of future generation after LCD, is current flat panel displayIn one of the maximum technology that receives publicity.
Organic light emitting diode display (OLED) is a kind of active illuminating device, and it not only can be as formingThe pixel of AMOLED display, also can be used as the light source of solid-state illumination. So the raising of OLED performance,Especially the lifting of efficiency directly has influence on its application.
Wherein, improving the transmitance of top-illuminating OLED negative electrode and the transmitance of end illuminating OLED anode hasBe beneficial to the efficiency that improves OLED and respective devices thereof.
Summary of the invention
For the deficiencies in the prior art, the object of the invention is to: the anti-reflection structure of a kind of OLED is provided,To promote the light extraction efficiency of OLED.
For achieving the above object, the technical solution used in the present invention comprises:
An anti-reflection structure of OLED is covered with successively functional layer, negative electrode on the anode of described OLEDMaterial layer and cover layer, is characterized in that: between described cathode material layer and described cover layer, increase and haveThe antireflection layer of electric conductivity, the refractive index of described cathode material layer is c, described tectal refractive index is a, andThe refractive index b of described antireflection layer meets: c>b>A, or c<b<a.
Described cover layer is any one that select in Alq3, Liq, light emitting layer material, LiF, ZnSeThe single layer structure that material forms, or select the laminated construction that wherein any at least two materials form;
The material of described cathode material layer is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of described antireflection layer is Al, Ag, ITO, IZO or AZO.
Described antireflection layer is the material of composite construction or the material of nanostructured, and its equivalent refractive index b ' is situated betweenBetween a and c.
For achieving the above object, the technical solution used in the present invention also comprises:
An anti-reflection structure of OLED is covered with successively functional layer and negative electrode on the anode of described OLEDMaterial layer, the refractive index of described cathode material layer is c, it is characterized in that: described cathode material layer with described inBetween functional layer, increase the antireflection layer with conductive characteristic, the work function of described antireflection layer is less than 4eV, described inThe refractive index of the layer of material of pressing close to most with described antireflection layer in functional layer is d, and the refractive index of described antireflection layerB meets: c>b>D, or c<b<d.
The layer of material of pressing close to most with described antireflection layer in described functional layer be select LiF, CsF, Liq, K,In Mg, Ca one;
The material of described cathode material layer is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of described antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
Described antireflection layer is the material of composite construction or the material of nanostructured, and its equivalent refractive index b ' is situated betweenBetween c and d.
For achieving the above object, the technical solution used in the present invention also comprises:
An anti-reflection structure of OLED is covered with successively functional layer and sun below the negative electrode of described OLEDUtmost point material layer, is characterized in that: between described anode material layer and described functional layer, be added with and have conductionThe antireflection layer of characteristic, the work function of described antireflection layer is greater than 4.5eV, and the refractive index of described anode material layer is e,The refractive index of pressing close to the layer of material of described antireflection layer in described functional layer is most f, the refractive index of described antireflection layerB meets: e>b>F, or e<b<f.
The layer of material of pressing close to most with described antireflection layer in described functional layer is NPB, TPD, m-MTDATAIn one;
The material of described anode material layer is Al, Ag, ITO, IZO, AZO or Graphene;
The material of described antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
Described antireflection layer is the material of composite construction or the material of nanostructured, and its equivalent refractive index b ' is situated betweenBetween e and f.
For achieving the above object, the technical solution used in the present invention also comprises:
An anti-reflection structure of OLED is covered with successively functional layer and sun below the negative electrode of described OLEDUtmost point material layer, is characterized in that: below described anode material layer, be added with the antireflection layer with conductive characteristic,The refractive index of described anode material layer is e, presses close to the layer of material of described anode material layer in described functional layer mostRefractive index be f, the refractive index b of described antireflection layer meets: f>e>B, or f<e<b.
The layer of material of pressing close to most described anode material layer in described functional layer is NPB, TPD, m-MTDATAIn one;
The material of described anode material layer is Al, Ag, ITO, IZO, AZO or Graphene;
The material of described antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
Described antireflection layer is the material of composite construction or the material of nanostructured, and its equivalent refractive index b ' is fullFoot: f>e>B ' or f<e<b '.
Compared with prior art, the beneficial effect that the present invention has is: the present invention is at top-illuminating OLEDNegative electrode or increase an antireflection layer on the anode of end illuminating OLED, and make the refractive index of this antireflection layerBetween the refractive index of its upper and lower two layer medium, can improve light extraction efficiency, thereby improve OLED'sPerformance.
Brief description of the drawings
Fig. 1 is light incides substrate S2 through deielectric-coating S1 reflection and refraction schematic diagram from medium S0;
Fig. 2 is that monofilm reflectivity R is with optical thickness of thin film n1The change curve of h;
Fig. 3 is the anti-reflection structural representation of a kind of top-illuminating OLED negative electrode provided by the invention;
Fig. 4 is the anti-reflection structural representation of another kind of top-illuminating OLED negative electrode provided by the invention;
Fig. 5 is the anti-reflection structural representation of illuminating OLED anode of a kind of end provided by the invention;
Fig. 6 is the anti-reflection structural representation of illuminating OLED anode of the another kind of end provided by the invention.
Detailed description of the invention
The basic optical principle of paper is as follows:
As shown in Figure 1, light is n from refractive index0Medium S0 through refractive index be n1, the thickness medium that is hIt is n that film S1 incides refractive index2Substrate S2, the reflectance formula on deielectric-coating S1 is as follows:
Wherein: R is the reflectivity on deielectric-coating S1;
It is the optical thickness of deielectric-coating S1.
Above formula shows, for certain substrate S2 and deielectric-coating S1, n1And n2For constant, R with(withn1H) change.
Below with crown board K9 glass (refractive index n2=1.52) (refractive index is n to plated surface thin film1)，Wavelength is that (refractive index is n from air for the light of λ0) in vertical incidence be example, to setted wavelength λ and different foldingPenetrate rate n1Deielectric-coating, the monofilm reflectivity R that can calculate is with optical thickness of thin film n1The change curve of h,As shown in Figure 2.
According to the analysis to film total reflectivity, from Fig. 2, can find out:
(1) film of which kind of refractive index no matter, as long as the optical thickness n of film1H is that the integral multiple of λ/2 (is λ/4Even-multiple), reflectivity all equals the not reflectivity before plated film of substrate, neither anti-reflection do not increase yet anti-.
(2) when the refractive index n of rete1Be less than substrate of glass refractive index n2, as long as optical thickness of thin film n1H is notBe the integral multiple of λ/2, have anti-reflection effect, and n1Less, reflectivity R is less, and antireflective effect is better,As the optical thickness n of film1When h is the odd-multiple of λ/4, it is minimum that reflectivity reaches, and is anti-reflection film;
(3) when the refractive index n of rete1Be greater than substrate of glass refractive index n2, as long as optical thickness of thin film n1H is notBe the integral multiple of λ/2, all can have the effect that increases reflection, and n1Larger, reflectivity R is larger, reflection effectFruit is better, and in the time of odd-multiple that optical thickness of thin film is λ/4, maximum appears in reflectivity, for increasing anti-film.
Therefore, the present invention is based on above-mentioned optical principle, provide a kind of raising top-illuminating OLED negative electrode to see throughThe anti-reflection structure of the OLED of rate and end illuminating OLED anode transmitance.
As shown in Figure 3, be the anti-reflection structure of a kind of top-illuminating OLED negative electrode provided by the invention, described topThe anode of illuminating OLED can by anode layer 11 of two-layer indium tin oxide 10,12 (ITO) therebetween (asAl) form, in prior art, generally covering function layer 20 on described anode, in described functional layer 20 againCovered cathode material layer 30 and cover layer 40. Wherein, the version of described functional layer 20 has a lot of changesChange form, cannot enumerate in this application, in Fig. 3, only with modal version for example asUnder, it comprises: hole injection layer 22 (HIL), hole transmission layer, luminescent layer, electron transfer layer and electronicsImplanted layer 21 (EIL), and claim that the part between hole injection layer 22 and electron injecting layer 21 is organic layer 23.When described OLED work, described functional layer 20 is because the radiation recombination in electronics and hole is and luminous, and light is saturatingCross cathode material layer 30 and cover layer 40 and penetrate to top.
In order to improve light penetration, the present invention described cathode material layer 30 (refractive index be c) with described inCover layer 40 (refractive index be increase between a) antireflection layer 50 that one deck has conductive characteristic (refractive index is b,Thickness is H), known according to above-mentioned principle analysis, as long as the refractive index of described antireflection layer 50 meets: c > b > a,Or c <b < a, can make described antireflection layer 50 have antireflective effect.
Also having other requirement: b × H as for the optical thickness of saying described antireflection layer 50 can not be wavelength of light1/4th even-multiple, in actual OLED but without this factor of worry about. Reason is:The light of the hole injection layer (HIL) of organic layer 20 and the luminous generation of described electron injecting layer 21 (EIL) radiation recombinationThe wave-length coverage of line is a continuum, is assumed to be [λ 1, λ 2], its spectrum not only have one or several fromLoose point, therefore, even if described antireflection layer 50 is for the some wavelength value in [λ 1, λ 2] or certain several wavelengthValue does not have anti-reflection effect, but for whole wave-length coverage [λ 1, λ 2], described antireflection layer 50 on the wholeStill can play antireflective effect, but concrete thickness need to carry out thickness optimization adjusting according to actual conditions.
Certainly, corresponding to the OLED of the different characteristics of luminescences (as ruddiness, green glow, blue light OLED, white lightOLED), it requires the wavelength of light mainly passed through also not identical, therefore needs described antireflection layer 50Optical thickness b × H adjusts. To require the main light by the most responsive 500nm of human eye as example, thisTime, should avoid as far as possible the optical thickness b × H of described antireflection layer 50 close 500nm 1/4thEven-multiple, and the optical thickness b × H that as far as possible makes described antireflection layer 50 near 500nm 1/4th strangeSeveral times, so that the light that wavelength is 500nm can farthest be passed by the top of top-illuminating OLED. ValueOne carry, the thickness of concrete antireflection layer need to according to actual conditions and need to carry out thickness optimization adjusting (thickDegree may be less than 1/4th wavelength, but still have anti-reflection function), to make the transmitance utmost pointGreatly.
For make described cathode material layer 30 (refractive index be c), described cover layer 40 (refractive index be a) withAnd described antireflection layer 50 (refractive index is that refractive index b) meets: c>b>A, or c<b<a, described negative electrodeThe material of material layer 30, described cover layer 40 and described antireflection layer 50 can do multiple choices, at this point twoThe situation of kind illustrates:
(1)c>b>a
Described cover layer 40 selects LiF (refractive index is 1.4) or other organic material as NPB, TPD(refractive index approximately 1.8 left and right) or Alq3 (refractive index is 1.71).
Now, if the material selection IZO of described cathode material layer 30, the material of described antireflection layer 50 canSelect ITO.
As shown in table 1, be refractive index and the extinction coefficients of various materials at 550nm wavelength place:
Table 1
| Material | Refractive index | Extinction coefficient |
| Al | 0.963 | 6.69 |
| Ag | 0.124 | 3.348 |
| Li | 0.206 | 2.474 |
| K | 0.05 | 1.55 |
| Mg | 0.31 | 5.10 |
| Ca | 0.620 | 2.142 |
| Ni | 1.772 | 3.252 |
| Au | 0.359 | 2.691 |
| Cu | 0.944 | 2.594 |
| ITO | 1.822 | 0.018 |
| IZO | 2.031 | 0.019 |
| SiNx | 1.799 | 0 |
| SiOx | 1.723 | 0 |
(note: table 1 is just used for making reference, does not represent can be used for doing male or female. )
(2)c<b<a
Described cover layer 40 can be selected the organic materials such as NPB, TPD or Alq3, and (refractive index is about 1.8-1.9Between) or ZnSe (refractive index is 2.89) or Ta2O5(refractive index is 2.16).
Now, as shown in Table 1, if the material selection Al of described cathode material layer 30, described antireflection layer50 material can be selected ITO, IZO (if while selecting ZnSe to do cover layer) etc.; If described cathode materialThe material selection Ag of layer 30, the material of described antireflection layer 50 can be selected Al, ITO or IZO ... soEtc..
Be exemplified below in detail again:
Described cover layer 40 is to select Alq3, Liq, EML (light emitting layer material), LiF, ZnSeIn the single layer structure that forms of any one material, or select wherein arbitrarily that at least two materials form foldedLayer structure;
The material of described cathode material layer 30 is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of described antireflection layer 50 is Al, Ag, ITO, IZO or AZO.
In above-mentioned situation (1) and situation (2), the material of described antireflection layer 50 is except selecting above-mentioned table 1In outside the material enumerated, can also be that (for example multiple layers of different materials composition is compound for the material of composite constructionStructure) or the material of nanostructured, as long as its have conductive characteristic and translucence (in fact as long asEnough thinly all there is translucence), and its equivalent refractive index b ' is between a and c.
As shown in Figure 4, be the anti-reflection structure of another kind of top-illuminating OLED negative electrode provided by the invention, its bagDraw together anode, functional layer 20, cathode material layer 30 (refractive index be c) with cover layer 40, in order to improve lightTransmitance, the present invention increases one deck and has conduction between described cathode material layer 30 and described functional layer 20Characteristic and work function less (as, be less than 4eV) antireflection layer 50 (refractive index is b, and thickness is H), andAnd, suppose that the refractive index of the layer of material of pressing close to most with described antireflection layer 50 in described functional layer 20 is d,As long as meet formula: c>b>D, or c<b<d, can realize anti-reflection function.
In the present embodiment, one deck of pressing close to most with described antireflection layer 50 in described functional layer 20 is electron beamEnter layer 21, electron injecting layer 21 described herein, can be both the material layer only with electronic injection function,Also can be the doped layer that has electronic injection function and electric transmission function concurrently, unite with electron injecting layer 21 at thisBe referred to as.
In the present embodiment, described cathode material layer 30, described electron injecting layer 21 and described antireflection layer 50Material can do multiple choices, illustrate in two kinds of situation at this:
(1)c<b<d
Described electron injecting layer 21 is selected LiF (refractive index is 1.4) or Liq (refractive index is 1.7 left and right).
Now, if the material selection Al of described cathode material layer 30, the material of described antireflection layer 50 is optionalUse Ag.
(2)c>b>d
Described electron injecting layer 21 is selected K or Ca or Mg. And the material of antireflection layer 50 can be selected Al,Cathode material layer 30 can be selected ITO or IZO etc.
Be exemplified below in detail again:
The layer of material of pressing close to most with described antireflection layer 50 in described functional layer 20 be select LiF, CsF, Liq,In K, Mg, Ca one;
The material of described cathode material layer 30 is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of described antireflection layer 50 is Al, Ag, ITO, IZO, AZO or Graphene.
Similarly, in above-mentioned situation (1) and situation (2), the material of described antireflection layer 50 is except selectingOutside the material of enumerating in above-mentioned table 1, it can also be material (for example multiple layers of different materials group of composite constructionThe composite construction becoming) or the material of nanostructured, as long as it has translucence and conductive characteristic, andWork function less (as, be less than 4eV), and its equivalent refractive index b ' is between c and d.
As shown in Figure 5, be the anti-reflection structure of illuminating OLED anode of a kind of end provided by the invention, the described endThe structure of the negative electrode 60 of illuminating OLED does not repeat them here, and below described negative electrode 60, is also coated with function(refractive index is e) to layer 20, and the present invention is more in described anode material layer 70 and institute with anode material layer 70State and between functional layer 20, added antireflection layer 50 (refractive index is b), and pastes most in described functional layer 20The refractive index of the layer of material of nearly described antireflection layer 50 is f, now, requires described antireflection layer 50 to have conductionCharacteristic and higher work function (as be greater than 4.5eV, be beneficial to the injection in hole), and meet formula: e > b > f,Or e <b < f.
In the present embodiment, one deck of pressing close to most with described antireflection layer 50 in described functional layer 20 is hole noteEnter layer 22 (HIL), hole injection layer 22 described herein, can be both only to have hole function of injectingMaterial layer, can be also the doped layer that has hole function of injecting and hole transport function concurrently, notes with hole at thisEnter layer 22 general designation.
In the present embodiment, described anode material layer 70, described hole injection layer 22 and described antireflection layer50 material can do multiple choices, illustrates in two kinds of situation at this:
(1)e<b<f
Described hole injection layer 22 is selected NPB, TPD, or one in m-MTDATA etc.
Now, if the material selection Al of described anode material layer 70, the material of described antireflection layer 50 is optionalUse ITO.
(2)e>b>f
Described hole injection layer 22 is selected NPB, TPD, or one in m-MTDATA etc.
Now, if the material selection IZO of described anode material layer 70, the material of described antireflection layer 50 canSelect ITO.
Be exemplified below in detail again:
The layer of material of pressing close to most with described antireflection layer 50 in described functional layer 20 be NPB, TPD orm-MTDATA；
The material of described anode material layer 70 is Al, Ag, ITO, IZO, AZO or Graphene;
The material of described antireflection layer 50 is Al, Ag, ITO, IZO, AZO or Graphene.
Similarly, in above-mentioned situation (1) and situation (2), the material of described antireflection layer 50 is except selectingOutside the material of enumerating in above-mentioned table 1, it can also be material (for example multiple layers of different materials group of composite constructionThe composite construction becoming) or the material of nanostructured, as long as it has translucent, conductive characteristic and higherWork function (as being greater than 4.5eV), and its equivalent refractive index b ' is between e and f.
As shown in Figure 6, be the anti-reflection structure of illuminating OLED anode of the another kind of end provided by the invention, described inThe negative electrode below of end illuminating OLED be also coated with functional layer 20 and anode material layer 70 (refractive index is e),And the present invention more below described anode material layer 70, cover one deck antireflection layer 50 (refractive index is b), andThe refractive index of pressing close to the layer of material of described anode material layer 70 in described functional layer 20 is most f, now,Ask described antireflection layer 50 to there is translucent and conductive characteristic, and meet formula: f e>B, or f<e<b.
In the present embodiment, one deck of pressing close to most with institute anode material layer 70 in described functional layer 20 is holeImplanted layer 22 (HIL), hole injection layer 22 described herein, can be both only to have hole function of injectingMaterial layer, can be also the doped layer that has hole function of injecting and hole transport function concurrently, at this with holeImplanted layer 22 general designations.
In the present embodiment, described anode material layer 70, described hole injection layer 22 and described antireflection layer 50Material can do multiple choices, illustrate in two kinds of situation at this:
(1)f<e<b
Described hole injection layer 22 is selected NPB, TPD, or one in m-MTDATA etc.
Now, if the material selection ITO of described anode material layer 70, the material of described antireflection layer 50 canSelect IZO.
(2)f>e>b
Described hole injection layer 22 is selected NPB, TPD, or one in m-MTDATA etc.
Now, if the material selection ITO of described anode material layer 70, the material of described antireflection layer 50 canSelect Al, Ag or Graphene.
Be exemplified below in detail again:
The layer of material of pressing close to most with institute anode material layer 70 in described functional layer 20 be NPB, TPD orm-MTDATA；
The material of described anode material layer 70 is Al, Ag, ITO, IZO, AZO or Graphene;
The material of described antireflection layer 50 is Al, Ag, ITO, IZO, AZO or Graphene.
Similarly, in above-mentioned situation (1) and situation (2), the material of described antireflection layer 50 is except selectingOutside the material of enumerating in above-mentioned table 1, it can also be material (for example multiple layers of different materials group of composite constructionThe composite construction becoming) or the material of nanostructured, as long as it has translucent and conductive characteristic, and itsEquivalent refractive index b ' meets f>e>B ' or f<e<b '.
More than explanation is just illustrative for the purpose of the present invention, and nonrestrictive, ordinary skill peopleMember understands, in the case of not departing from the spirit and scope that claim limits, can make many amendments,Change or equivalence, but within all will falling into protection scope of the present invention.
Claims (9)
1. an anti-reflection structure of OLED is covered with successively functional layer with cloudy on the anode of described OLEDUtmost point material layer, the refractive index of described cathode material layer is c, it is characterized in that: in described cathode material layer and instituteState between functional layer and increase the antireflection layer with conductive characteristic, the work function of described antireflection layer is less than 4eV, instituteThe refractive index of stating the layer of material of pressing close to most with described antireflection layer in functional layer is d, and the refraction of described antireflection layerRate b meets: c > b > d.
2. the anti-reflection structure of OLED according to claim 1, is characterized in that:
The layer of material of pressing close to most with described antireflection layer in described functional layer be select LiF, CsF, Liq, K,In Mg, Ca one;
The material of described cathode material layer is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of described antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
3. the anti-reflection structure of OLED according to claim 1, is characterized in that: described antireflection layerBe the material of composite construction or the material of nanostructured, and its equivalent refractive index b ' is between c and d.
4. an anti-reflection structure of OLED, below the negative electrode of described OLED, be covered with successively functional layer withAnode material layer, is characterized in that: between described anode material layer and described functional layer, be added with to have and leadThe antireflection layer of electrical characteristics, the work function of described antireflection layer is greater than 4.5eV, and the refractive index of described anode material layer isE, the refractive index of pressing close to the layer of material of described antireflection layer in described functional layer is most f, the folding of described antireflection layerPenetrating rate b meets: e <b < f.
5. the anti-reflection structure of OLED according to claim 4, is characterized in that:
The layer of material of pressing close to most with described antireflection layer in described functional layer is NPB, TPD, m-MTDATAIn one;
The material of described anode material layer is Al, Ag, ITO, IZO, AZO or Graphene;
The material of described antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
6. the anti-reflection structure of OLED according to claim 4, is characterized in that: described antireflection layerBe the material of composite construction or the material of nanostructured, and its equivalent refractive index b ' is between e and f.
7. an anti-reflection structure of OLED, below the negative electrode of described OLED, be covered with successively functional layer withAnode material layer, is characterized in that: below described anode material layer, be added with and have the anti-reflection of conductive characteristicLayer, the refractive index of described anode material layer is e, presses close to one deck of described anode material layer in described functional layer mostThe refractive index of material is f, and the refractive index b of described antireflection layer meets: f > e > b.
8. the anti-reflection structure of OLED according to claim 7, is characterized in that:
The layer of material of pressing close to most described anode material layer in described functional layer is NPB, TPD, m-MTDATAIn one;
The material of described anode material layer is Al, Ag, ITO, IZO, AZO or Graphene;
The material of described antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
9. the anti-reflection structure of OLED according to claim 7, is characterized in that: described antireflection layerBe the material of composite construction or the material of nanostructured, and its equivalent refractive index b ' meets: f > e > b '.
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