CN108305956B - OLED display panel and OLED display device - Google Patents
OLED display panel and OLED display device Download PDFInfo
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- CN108305956B CN108305956B CN201810077203.9A CN201810077203A CN108305956B CN 108305956 B CN108305956 B CN 108305956B CN 201810077203 A CN201810077203 A CN 201810077203A CN 108305956 B CN108305956 B CN 108305956B
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- 238000002347 injection Methods 0.000 claims description 43
- 239000007924 injection Substances 0.000 claims description 43
- 238000005538 encapsulation Methods 0.000 claims description 22
- 230000005525 hole transport Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 316
- 239000012044 organic layer Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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Abstract
The invention discloses an OLED display panel and an OLED display device. The refractive index of the reflection increasing layer is lower, the total reflection angle of light rays emitted by the organic light emitting layer can be reduced, most of the light rays emitted by the organic light emitting layer are emitted to the same direction, the transparent display brightness of the display panel is improved under the condition that an additional transparent area is not required to be added, and the aperture opening ratio of the display panel is also improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to an OLED display panel and an OLED display device.
Background
An Organic Light Emitting Diode (OLED) has many excellent characteristics such as self-luminescence, low energy consumption, wide viewing angle, and fast response, and a panel made of the OLED has characteristics such as simple structure and flexibility, which has attracted great interest in the scientific research and industrial fields, and is considered as a next generation display technology with great potential. The transparent display is also a great direction for the development of display technology due to the application prospect in the fields of 3D display, vehicle-mounted display and the like.
At present, the pixels where the OLED devices applied to the transparent display are located are opaque, and the transparent display is realized by leaving a transparent area between the pixels. However, the display panel formed of the aforementioned OLED device has not only a small aperture ratio but also insufficient brightness of transparent display.
Disclosure of Invention
The invention mainly solves the technical problem of providing the OLED display panel and the OLED display device, which can improve the brightness of the transparent display of the display panel and improve the aperture opening ratio of the display panel.
In order to solve the technical problems, the first technical scheme adopted by the invention is as follows: the OLED display panel comprises a device layer, an organic light emitting layer arranged on the device layer, and an encapsulation layer covering the organic light emitting layer, wherein at least one layer of reflection increasing layer is further arranged between the device layer and the encapsulation layer.
In order to solve the above technical problems, the second technical solution adopted by the present invention is: there is provided an OLED display device including the display panel according to any one of the present invention.
The invention has the beneficial effects that: the OLED display panel comprises a device layer, an organic light-emitting layer arranged on the device layer, and an encapsulation layer covering the organic light-emitting layer, wherein at least one reflection increasing layer is arranged between the device layer and the encapsulation layer. The refractive index of the reflection increasing layer is lower, the total reflection angle of light rays emitted by the organic light emitting layer can be reduced, most of light rays emitted by the organic light emitting layer are emitted to the same direction, the transparent display brightness of the display panel is improved under the condition that an additional transparent area is not needed to be added, and the aperture opening ratio of the display panel is also improved.
Drawings
FIG. 1a is a schematic structural diagram of a first embodiment of an OLED display panel according to the present invention;
FIG. 1b is a schematic diagram of an embodiment of an organic layer of the OLED display panel of FIG. 1 a;
FIG. 2a is a schematic structural diagram of a second embodiment of an OLED display panel according to the present invention;
FIG. 2b is a schematic diagram of an embodiment of an organic layer of the OLED display panel shown in FIG. 2 a;
FIG. 3a is a schematic structural diagram of a third embodiment of an OLED display panel according to the present invention;
FIG. 3b is a schematic diagram of an embodiment of organic layers of the OLED display panel shown in FIG. 3 a;
FIG. 4a is a schematic structural diagram of a fourth embodiment of an OLED display panel according to the present invention;
FIG. 4b is a schematic structural diagram of an embodiment of an organic layer of the OLED display panel shown in FIG. 4 a.
Detailed Description
The present invention provides an OLED display panel and an OLED display device, and in order to make the objects, technical solutions and technical effects of the present invention more clear and clearer, the present invention is further described in detail below, and it should be understood that the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention.
The present embodiment provides an OLED display panel, which includes a device layer, an organic light emitting layer disposed on the device layer, and an encapsulation layer covering the organic light emitting layer, wherein at least one reflection enhancement layer is further included between the device layer and the encapsulation layer.
The number of the reflection increasing layers is not particularly limited, and may be, for example, 1 layer, 3 layers, or 5 layers, depending on the actual situation.
The organic light emitting layer comprises an anode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode layer which are sequentially stacked.
In this embodiment, the refractive index of the reflection increasing layer is lower than the refractive indices corresponding to the anode layer, the hole injection layer, the electron injection layer, and the cathode layer.
For the sake of clarity, the OLED display panel of the above embodiment is explained by taking the example that the OLED display panel includes one reflection increasing layer.
Referring to fig. 1a and fig. 1b, fig. 1a is a schematic structural diagram of a first embodiment of an OLED display panel according to the present invention; FIG. 1b is a schematic structural diagram of an embodiment of an organic layer of the OLED display panel shown in FIG. 1 a.
Referring to fig. 1a, in one embodiment, an OLED display panel 10 includes a device layer 11, an inversion layer 12, an organic light emitting layer 13, and an encapsulation layer 14, which are sequentially stacked.
Wherein the refractive index of the reflection increasing layer 12 is 1.2-1.4. In one embodiment, the constituent of the reflection-increasing layer 12 includes MgF2The refractive index of the reflection increasing layer 12 is 1.38. In other embodiments, other low index materials may be used to form the reflection-increasing layer 12.
Among them, the device layer 11 is formed of a plurality of thin film transistors for driving the organic light emitting layer 13 in the OLED display panel 10 to emit light according to a driving current. The encapsulation layer 14 serves to protect the OLED display panel 10.
The organic light emitting layer 13 includes an anode layer 131, an organic layer 132, and a cathode layer 133, which are sequentially stacked. In this embodiment, the anode layer 131 and the cathode layer 133 are semi-transparent structures, and external light can be emitted from the anode layer 131 or the cathode layer 133 at the same time, so that the OLED display panel 10 realizes transparent display.
Meanwhile, since the anode layer 131 and the cathode layer 133 are semi-transparent structures, the brightness of the OLED display panel 10 can be improved without adding an additional transparent region, and the aperture ratio of the OLED display panel 10 is increased. Specifically, the anode layer 131 includes indium tin oxide and Ag. In this embodiment, the anode layer 131 is a semi-transparent electrode composed of a two-layer structure of indium tin oxide and Ag. Wherein the indium tin oxide is transparent; and when the thickness of Ag is different, the transparent state is not the same. In a specific application scenario, the semi-permeable electrode can be formed by controlling the thickness of Ag.
In the present embodiment, the composition of the cathode layer 133 includes Mg and Ag in a ratio range of 1: 9-9: 1, the performance of the OLED display panel 10 can be flexibly adjusted and controlled, and is not particularly limited herein.
For clarity of the structure of the organic layer 132, please continue to refer to fig. 1b, the organic layer 132 includes a hole injection layer 1321, a hole transport layer 1322, an emission layer 1323, an electron transport layer 1324 and an electron injection layer 1325 stacked in sequence.
With continued reference to fig. 1a, a hole injection layer 1321 is disposed adjacent the anode layer 131 and an electron injection layer 1325 is disposed adjacent the cathode layer 133.
In the present embodiment, the OLED display panel 10 is a top emission display panel, in which light of the top emission display panel is emitted from the top of the display panel. That is, in the present embodiment, the surface where the cathode layer 133 is located is the front surface of the OLED display panel 10, and the light emitted from the light emitting layer 1323 is mainly emitted from the cathode layer 133.
In another embodiment, the OLED display panel 10 further includes a first substrate on which the device layer 11 is formed. The first substrate is a substrate, and may be a glass substrate, for example.
Referring to fig. 1a and 1b and the related text, the structure of the OLED display panel 10 of this embodiment has been described in detail, and the following describes a process flow for manufacturing the OLED display panel 10 of this embodiment and the operating principle of the OLED display panel 10.
First, the device layer 11 is formed on the first substrate, and the device layer 11 may be formed of amorphous silicon or low temperature polysilicon, and a compound such as an oxide semiconductor. An enhanced contrast layer 12 is then deposited on the device layer 11. In one embodiment, MgF may be used2The reflection-increasing layer 12 is formed, and the refractive index of the reflection-increasing layer 12 is 1.38. In other embodiments, the reflection-increasing layer 12 may be formed using a material having a low refractive index so as to have a lower refractive index than the anode layer 131.
Further, a semi-transparent ITO/Ag anode layer 131, a hole injection layer 1321, a hole transport layer 1322, a light emitting layer 1323, an electron transport layer 1324, and an electron injection layer 1325 are sequentially deposited on the reflection-increasing layer 12. And then, co-evaporating Mg and Ag to form a semi-permeable cathode layer 133, wherein in the components of the cathode layer 133, the ratio of Mg to Ag can be flexibly regulated according to the performance of the OLED display panel 10, and the ratio of Mg to Ag is 1: 9 to 9: 1, the product is obtained.
Finally, an encapsulation layer 14 is deposited on the cathode layer 133, wherein the encapsulation layer 14 is a thin film.
The above is a process flow for manufacturing the OLED display panel 10 of the present embodiment. The operation of the OLED display panel 10 will be described below.
In this embodiment, since both the cathode layer 133 and the anode layer 131 have a semi-permeable structure, light emitted from the light-emitting layer 1323 may be emitted from the cathode layer 133 or the anode layer 131. However, when the light emitted from the OLED is emitted to both the cathode layer 133 and the anode layer 131, the display contrast of one side of the OLED display panel 10 is reduced. In order to improve the brightness and contrast of the front surface of the OLED display panel 10, most of the light needs to be emitted from the front surface.
In this embodiment, since the refractive index of the reflection-increasing layer 12 is smaller than the refractive index of the anode layer 131, most of the light emitted to the reflection-increasing layer 12 is totally reflected by using the total reflection principle, so that most of the light is emitted from the cathode layer 133, thereby improving the front brightness of the OLED display panel 10.
Specifically, the refractive index of the anode layer 131 is 1.8, the refractive index of the reflection-increasing layer 12 is in a range of 1.2-1.4, and the refractive index of the reflection-increasing layer 12 is smaller than the refractive index of the anode layer 131. The critical angle of total reflection of the light emitted from the light emitting layer 1323 at the coplanar interface between the anode layer 131 and the reflection-increasing layer 12 is small, and when the incident angle of the light at the coplanar interface between the anode layer 131 and the reflection-increasing layer 12 is greater than or equal to the critical angle of total reflection, total reflection occurs, so that the light is reflected back to the direction of the cathode layer 133, thereby avoiding the loss caused by light refraction and improving the front brightness of the OLED display panel 10.
In one embodiment, the refractive index of the reflection-increasing layer 12 is 1.38, the refractive index of the anode layer 131 is 1.8, and the critical angle of total reflection at the coplanar interface between the anode layer 131 and the reflection-increasing layer 12 is about 50 °, and when the incident angle of the light at the coplanar interface between the anode layer 131 and the reflection-increasing layer 12 is greater than or equal to 50 °, total reflection occurs, so that the light is reflected back to the cathode layer 133.
Further, referring to fig. 2a and fig. 2b, fig. 2a is a schematic structural diagram of a second embodiment of the OLED display panel of the present invention, and fig. 2b is a schematic structural diagram of an embodiment of an organic layer of the OLED display panel in fig. 2 a.
Referring to fig. 2a, in one embodiment, the OLED display panel 20 includes a device layer 21, an inversion layer 22, an organic light emitting layer 23, and an encapsulation layer 24.
The organic light emitting layer 23 includes an anode layer 231, an organic layer 232, and a cathode layer 233. In this embodiment, the anode layer 231 and the cathode layer 233 are semi-transparent structures, and external light can be emitted from the anode layer 231 or the cathode layer 233 at the same time, so that the OLED display panel 20 realizes transparent display.
For clarity of illustration of the structure of the organic layer 232, please continue to refer to fig. 2b, the organic layer 232 includes a hole injection layer 2321, a hole transport layer 2322, a light emitting layer 2323, an electron transport layer 2324 and an electron injection layer 2325, which are sequentially stacked. Wherein the hole injection layer 2321 is disposed adjacent to the reflection-increasing layer 22 and the electron injection layer 2325 is disposed adjacent to the cathode layer 233.
In the present embodiment, the OLED display panel 20 is a top emission display panel, in which light of the top emission display panel is emitted from the top of the display panel. That is, in the present embodiment, the surface where the cathode layer 233 is located is the front surface of the OLED display panel 20, and the light emitted from the light-emitting layer 2323 is mainly emitted from the cathode layer 233.
Unlike the first embodiment, the position where the reflection-increasing layer 22 is provided in the present embodiment is different, and in the present embodiment, the reflection-increasing layer 22 is provided between the anode layer 231 and the hole injection layer 2321, where the refractive index of the reflection-increasing layer 22 is lower than the refractive index of the hole injection layer 2321. In one embodiment, the hole injection layer 2321 has a refractive index ranging from 1.5 to 1.8, and the reflection-increasing layer 22 has a refractive index ranging from 1.2 to 1.4.
The process flow of the OLED display panel 20 of the present embodiment is basically the same as that of the first embodiment, and is different from the first embodiment in that the anode layer 231 is fabricated immediately after the device layer 21 is fabricated, the reflection-increasing layer 22 is fabricated after the anode layer 231 is fabricated, and then the hole injection layer 2321, the hole transport layer 2322, the light-emitting layer 2323, the electron transport layer 2324, the electron injection layer 2325, the cathode layer 233, and the encapsulation layer 24 are sequentially fabricated.
In this embodiment, since both the cathode layer 233 and the anode layer 231 have a semi-permeable structure, light emitted from the light-emitting layer 2323 may be emitted from the cathode layer 233 or the anode layer 231. In order to improve the brightness and contrast of the front surface of the OLED display panel 20, most of the light needs to be emitted from the front surface.
In this embodiment, since the refractive index of the reflection-increasing layer 22 is smaller than the refractive index of the hole injection layer 2321, most of the light emitted to the reflection-increasing layer 22 is totally reflected by using the total reflection principle, so that most of the light is emitted from the cathode layer 233, and the brightness of the front surface of the OLED display panel 20 is further improved.
The critical angle of total reflection of the light emitted by the light-emitting layer 2323 at the coplanar interface of the hole injection layer 2321 and the reflection-increasing layer 22 is small, and when the incident angle of the light at the coplanar interface of the hole injection layer 2321 and the reflection-increasing layer 22 is greater than or equal to the critical angle of total reflection, total reflection can occur, so that the light is reflected back to the direction of the cathode layer 233, further, the loss caused by light refraction is avoided, and the brightness of the front surface of the OLED display panel 20 is improved.
Referring to fig. 3a and 3b, fig. 3a is a schematic structural diagram of a third embodiment of the OLED display panel of the present invention, and fig. 3b is a schematic structural diagram of an embodiment of an organic layer of the OLED display panel in fig. 3 a. Referring to fig. 3a, in one embodiment, the OLED display panel 30 includes a device layer 31, an organic light emitting layer 32, an inversion layer 33, and an encapsulation layer 34, which are sequentially stacked.
The organic light emitting layer 32 includes an anode layer 321, an organic layer 322, and a cathode layer 323. In this embodiment, the anode layer 321 and the cathode layer 323 are semi-transparent structures, and external light can be emitted from the anode layer 321 or the cathode layer 323 at the same time, so that the OLED display panel 30 realizes transparent display.
To clearly illustrate the structure of the organic layer 322, please continue to refer to fig. 2b, the organic layer 322 includes a hole injection layer 3221, a hole transport layer 3222, a light emitting layer 3223, an electron transport layer 3224, and an electron injection layer 3225, which are sequentially stacked. Among them, the hole injection layer 3221 is disposed adjacent to the anode layer 321, and the electron injection layer 3225 is disposed adjacent to the cathode layer 323.
Unlike the first embodiment, in the present embodiment, the OLED display panel 30 is a bottom emission display panel in which light of the bottom emission display panel is emitted from the bottom of the display panel. That is, in this embodiment, the anode layer 321 is located on the front surface of the OLED display panel 30, and light emitted from the light-emitting layer 3223 is mainly emitted from the anode layer 321.
Unlike the first embodiment, the reflection-increasing layer 33 of the present embodiment is provided at a different position, and in the present embodiment, the reflection-increasing layer 33 is provided between the cathode layer 323 and the sealing layer 34, wherein the refractive index of the reflection-increasing layer 33 is lower than the refractive index of the cathode layer 323.
The process flow of the OLED display panel 30 of the present embodiment is basically the same as that of the first embodiment, and is different from the first embodiment in that the organic light emitting layer 32 is fabricated immediately after the device layer 31 is fabricated, the inversion layer 33 is fabricated after the organic light emitting layer 32 is fabricated, and the encapsulation layer 34 is fabricated finally.
In this embodiment, since both the cathode layer 323 and the anode layer 321 have a semi-transparent structure, light emitted from the light-emitting layer 3223 may be emitted from the cathode layer 323 or the anode layer 321. In order to improve the brightness and contrast of the front surface of the OLED display panel 30, most of the light needs to be emitted from the front surface.
In this embodiment, since the refractive index of the reflection-increasing layer 33 is smaller than the refractive index of the cathode layer 323, most of the light emitted to the reflection-increasing layer 33 is totally reflected back by using the total reflection principle, so that most of the light is emitted from the anode layer 321, thereby improving the front brightness of the OLED display panel 30.
The critical angle of total reflection of the light emitted by the light emitting layer 3223 at the coplanar interface between the cathode layer 323 and the reflection-increasing layer 33 is small, and when the incident angle of the light at the coplanar interface between the cathode layer 323 and the reflection-increasing layer 33 is greater than or equal to the critical angle of total reflection, total reflection occurs, so that the light is reflected back to the direction of the anode layer 321, thereby avoiding the loss caused by light refraction, and improving the front brightness of the OLED display panel 30.
With continuing reference to fig. 4a and 4b, fig. 4a is a schematic structural diagram of a fourth embodiment of the OLED display panel of the present invention, and fig. 4b is a schematic structural diagram of an embodiment of an organic layer of the OLED display panel in fig. 4 a.
Referring to fig. 4a, in one embodiment, the OLED display panel 40 includes a device layer 41, an organic light emitting layer 42, an anti-reflection layer 43, and an encapsulation layer 44.
The organic light emitting layer 42 includes an anode layer 421, an organic layer 422, and a cathode layer 423. In this embodiment, the anode layer 421 and the cathode layer 423 are semi-transparent structures, and external light can be emitted from the anode layer 421 or the cathode layer 423 at the same time, so that the OLED display panel 40 realizes transparent display.
For clarity of illustration of the structure of the organic layer 422, please continue to refer to fig. 4b, the organic layer 422 includes a hole injection layer 4221, a hole transport layer 4222, a light emitting layer 4223, an electron transport layer 4224 and an electron injection layer 4225 stacked in sequence. Here, the electron injection layer 4225 is disposed adjacent to the reflection increasing layer 43, and the hole injection layer 4221 is disposed adjacent to the anode layer 421.
Unlike the first embodiment, in the present embodiment, the OLED display panel 40 is a bottom emission display panel in which light of the bottom emission display panel is emitted from the bottom of the display panel. That is, in this embodiment, the surface where the anode layer 421 is located is the front surface of the OLED display panel 40, and light emitted from the light-emitting layer 4223 is mainly emitted from the anode layer 421.
Unlike the first embodiment, the reflection-increasing layer 43 of the present embodiment is provided at a position different from that of the first embodiment, and in the present embodiment, the reflection-increasing layer 43 is provided between the cathode layer 423 and the electron injection layer 4225, wherein the refractive index of the reflection-increasing layer 43 is lower than that of the electron injection layer 4225. In one embodiment, the electron injection layer 4225 has a refractive index ranging from 1.5 to 1.8, and the reflection increasing layer 43 has a refractive index ranging from 1.2 to 1.4.
The process flow of the OLED display panel 40 of the present embodiment is basically the same as that of the first embodiment, and differs from the first embodiment in that the anode layer 421 is formed immediately after the device layer 41 is formed, the organic layer 422 is formed after the anode layer 421 is formed, the inversion layer 43 is formed, the cathode layer 423 is formed, and the sealing layer 44 is formed.
In this embodiment, since both the cathode layer 423 and the anode layer 421 have a semi-permeable structure, light emitted from the light-emitting layer 4223 may be emitted from the cathode layer 423 or the anode layer 421. In order to improve the brightness and contrast of the front surface of the OLED display panel 40, most of the light needs to be emitted from the front surface. In the embodiment, the reflection increasing layer 43 is added between the cathode layer 423 and the electron injection layer 4225, and since the refractive index of the reflection increasing layer 43 is smaller than that of the electron injection layer 4225, most of the light emitted to the reflection increasing layer 43 is totally reflected by using the total reflection principle, so that most of the light is emitted from the anode layer 421, and the brightness of the front surface of the OLED display panel 40 is further improved.
The total reflection critical angle of the light emitted by the light emitting layer 4223 at the coplanar interface of the electron injection layer 4225 and the reflection increasing layer 43 is small, and when the incident angle of the light at the coplanar interface of the electron injection layer 4225 and the reflection increasing layer 43 is greater than or equal to the total reflection critical angle, total reflection can be generated, so that the light is reflected back to the direction of the anode layer 421, further, the loss caused by light refraction is avoided, and the brightness of the front surface of the OLED display panel 40 is improved.
Here, the OLED display panel according to any one of the first to fourth embodiments is a transparent display panel, and transparent display can be achieved on both the front side and the back side of the display panel, and the reflection increasing layer is added, so that most of the light emitted from the light emitting layer is emitted from the front side, and the transparent display effect on the front side of the display panel is better than the display effect on the back side of the display panel.
Different from the prior art, the OLED display panel of the embodiment includes a device layer, an organic light emitting layer disposed on the device layer, and an encapsulation layer covering the organic light emitting layer, wherein at least one reflection increasing layer is further included between the device layer and the encapsulation layer. The refractive index of the reflection increasing layer is lower, the total reflection angle of light rays emitted by the organic light emitting layer can be reduced, most of light rays emitted by the organic light emitting layer are emitted to the same direction, the transparent display brightness of the display panel is improved under the condition that an additional transparent area is not needed to be added, and the aperture opening ratio of the display panel is also improved.
The invention also provides a display device which comprises the OLED display panel of any one of the above embodiments.
The structure, the manufacturing process and the working principle of the OLED display panel are described in detail with reference to fig. 1a to 4b and the related text descriptions, and are not repeated herein.
The display device is wearable equipment, such as an intelligent bracelet and an intelligent watch; and may be a VR (virtual reality) device or the like. But also may be a mobile phone, an electronic book, an electronic newspaper, a television, or a transparent billboard, etc., and is not limited thereto.
Different from the prior art, the display device of the embodiment includes an OLED display panel, where the OLED display panel includes a device layer, an organic light emitting layer disposed on the device layer, and an encapsulation layer covering the organic light emitting layer, and at least one reflection increasing layer is further included between the device layer and the encapsulation layer. The refractive index of the reflection increasing layer is lower, the total reflection angle of light rays emitted by the organic light emitting layer can be reduced, most of light rays emitted by the organic light emitting layer are emitted to the same direction, the transparent display brightness of the display panel is improved under the condition that an additional transparent area is not needed to be added, and the aperture opening ratio of the display panel is also improved.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (3)
1. An OLED display panel is characterized in that the OLED display panel comprises a device layer, an organic light emitting layer arranged on the device layer, and an encapsulation layer covering the organic light emitting layer, wherein the organic light emitting layer comprises an anode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode layer which are sequentially overlapped, the anode layer is adjacent to the device layer, the cathode layer is adjacent to the encapsulation layer, at least one reflection increasing layer is further arranged between the device layer and the encapsulation layer, the OLED display panel is a top emission display panel, and the reflection increasing layer is arranged between the anode layer and the hole injection layer; or the OLED display panel is a bottom emission display panel, the reflection increasing layer is arranged between the electron injection layer and the cathode layer, and the refractive index of the reflection increasing layer is lower than the refractive indexes corresponding to the anode layer, the hole injection layer, the electron injection layer and the cathode layer;
the refractive index range of the reflection increasing layer is 1.2-1.4; the component of the reflection increasing layer comprises MgF2(ii) a The anode layer comprises indium tin oxide and Ag; the cathode layer comprises Mg and Ag, and the proportion range of the Mg to the Ag is 1: 9-9: 1.
2. the display panel according to claim 1, further comprising a first substrate, wherein the device layer is formed on the first substrate.
3. An OLED display device, comprising the OLED display panel according to any one of claims 1-2.
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| CN103650196A (en) * | 2011-07-12 | 2014-03-19 | 欧司朗光电半导体有限公司 | Organic light-emitting component and method for producing an organic light-emitting component |
| CN102956837A (en) * | 2011-08-26 | 2013-03-06 | 三菱综合材料株式会社 | Organic electroluminescence component and manufacturing method thereof |
| CN102820433A (en) * | 2012-08-31 | 2012-12-12 | 昆山工研院新型平板显示技术中心有限公司 | Anti-reflection structure of organic light emitting diode (OLED) |
| CN102891265A (en) * | 2012-09-28 | 2013-01-23 | 昆山工研院新型平板显示技术中心有限公司 | Reflection enhancement structure of OLED (Organic Light Emitting Diode) anode and reflection enhancement structure of OLED cathode |
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