CN102683319B - Layout structure of metal-insulator-metal (MIM) capacitor with inter-metallic air isolation structure - Google Patents
Layout structure of metal-insulator-metal (MIM) capacitor with inter-metallic air isolation structure Download PDFInfo
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- CN102683319B CN102683319B CN201210169549.4A CN201210169549A CN102683319B CN 102683319 B CN102683319 B CN 102683319B CN 201210169549 A CN201210169549 A CN 201210169549A CN 102683319 B CN102683319 B CN 102683319B
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Abstract
The invention provides a layout structure of a metal-insulator-metal (MIM) capacitor with an inter-metallic air isolation structure. The layout structure comprises a first metal layer pattern, a contact hole pattern and a second metal layer pattern, which are sequentially laminated, wherein the first metal layer pattern comprises a first part which is rectangular and annular and a second part which is rectangular; the first part surrounds the second part; the first part and the second part are separated from each other at a rectangular and annular interval; the contact hole pattern comprises first contact hole parts, second contact hole parts and third contact hole parts; the first contact hole parts are arranged at three edges of the first part; the second contact hole parts are arranged at the three edges of the rectangular and annular interval between the first part and the second part; the third contact hole parts are arranged on the second part and rectangular; the second metal layer pattern comprises a first metal part and a second metal part; the first metal part covers the second contact hole parts; and the second metal part covers the first contact hole parts and the third contact hole parts.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of domain structure of the MIM capacitor with intermetallic air isolation structure and adopted described in there is the integrated circuit of domain structure of the MIM capacitor of intermetallic air isolation structure.
Background technology
So-called metal one insulator one metal M IM (Metal-Insulator-Metal) capacitor is widely used in various circuit as capacity cell.This M I M capacitor is integrated in multilayer interconnect structure conventionally, thereby MIM capacitor forms a part for multilayer interconnect structure.
Fig. 1 shows the structure of traditional MIM capacitor.
As shown in Figure 1, the sandwich structure that traditional MIM capacitor structure is comprised of metal, insulator, metal three-layer thin-film, specifically, traditional MIM capacitor structure comprises a metal level M2 (as the bottom crown of MIM capacitor), another metal level M3, top crown B2 and insulation dielectric layer A2.The top crown B2 of MIM capacitor is defined by one deck light shield, between upper and lower two parallel electrode plates (metal level M2, top crown B2), is insulation dielectric layer A2, forms thus a fixed capacity element.
Further, the bottom crown (metal level M2) that metal level M2 is connected electric capacity with at least one through hole C3 between metal level M3 is drawn from metal level M3.On the other hand, the top crown B2 that metal level M3 is connected electric capacity with at least one through hole C2 between top crown B2 draws from metal level M3.
Yet, minimizing along with device size, coupling effect parasitic between adjacent metal is more and more obvious, the opening speed that can have influence on circuit is yield and the integrity problem of circuit even, especially for NAN D type flash memory (NAN D Flash), DRAM (dynamic random access memory), the SRAM (static RAM) of large buffer memory, the dense degree of metal is higher, coupling effect can be more obvious, interference between adjacent metal can have influence on the reading current of memory cell, programming and erasing speed.And air is as the medium (more bigger than vacuum, to be about 1) of dielectric constant minimum, by air insulated (air gap), can make the coupling effect between adjacent metal become very little.On market, there is now the product of the air insulated utilized.
Therefore, hope can provide a kind of domain scheme of manufacturing cheaply the MIM capacitor with intermetallic air isolation structure.
Summary of the invention
Technical problem to be solved by this invention is for there being above-mentioned defect in prior art, and a kind of domain structure of manufacturing cheaply the MIM capacitor with intermetallic air isolation structure is provided.
According to a first aspect of the invention, provide a kind of domain structure with the MIM capacitor of intermetallic air isolation structure, it comprises: the first metal layer pattern stacking gradually, contact hole pattern and the second metal layer pattern; Wherein, described the first metal layer pattern comprises: the first of rectangular ring and the second portion of rectangle, and wherein said first is around second portion, and described first and second portion are spaced from each other with rectangular ring interval; Described contact hole pattern comprises: be arranged in the first contact hole part on three limits of first, be arranged in the second contact hole part on three limits at the rectangular ring interval between described first and second portion and the 3rd contact hole part that is arranged in the layout rectangle of second portion; The second metal layer pattern comprises: the first metal part and the second metal part, and wherein, the first metal has partly covered the second contact hole part, and the second metal has partly covered the first contact hole part and the 3rd contact hole part.
Preferably, described rectangular ring interval has formed described air isolation structure.
Preferably, do not arrange that last limit of first of the first contact hole part is relative with last limit of not arranging the second contact hole rectangular ring interval partly.
Preferably, the described second portion of described the first metal layer pattern and described first partly connect together as a pole plate of described MIM electric capacity by the second metal of the second metal layer pattern.
Preferably, in the described second portion of described the first metal layer pattern and the rectangular ring interval between described first, fill filler, formed thus another pole plate of described MIM capacitor.
Preferably, described another pole plate of described MIM capacitor is partly connected together and is drawn by described first metal of described the second metal layer pattern.
Preferably, define a that is spaced apart between the described M11 of first and second portion M12, the minimum dimension of described the first contact hole, described the second contact hole and described the 3rd contact hole is b, described the first contact hole, described the second contact hole and described the 3rd contact hole are c to the distance between metal, the process window of the minimum dimension of the first metal layer pattern is d, and the process window of the aligning of the first metal layer pattern is e; The process window of the minimum dimension of described the first contact hole, described the second contact hole and described the 3rd contact hole is f, and the process window of the aligning of described the first contact hole, described the second contact hole and described the 3rd contact hole is g; Satisfy condition: a > 2b+d+e+f+g and c > (a-b-d-e-f-g)/2.
According to a second aspect of the invention, provide a kind of integrated circuit of the domain structure of the described MIM capacitor with intermetallic air isolation structure according to a first aspect of the invention that adopted.
According to the present invention, provide a kind of domain structure of manufacturing cheaply the MIM capacitor with intermetallic air isolation structure.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily to the present invention, there is more complete understanding and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows the structure of traditional MIM capacitor.
Fig. 2 schematically shows according to the diagram of the contact hole pattern of the domain structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention and the first metal layer pattern.
Fig. 3 schematically shows according to the diagram of the contact hole pattern of the domain structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention and the second metal layer pattern.
Fig. 4 schematically shows according to the cross section structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention.
It should be noted that, accompanying drawing is used for illustrating the present invention, and unrestricted the present invention.Note, the accompanying drawing that represents structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Below with reference to Fig. 2 to Fig. 4, describe the domain structure of the MIM capacitor with intermetallic air isolation structure in detail.
According to the domain structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention, comprise: the first metal layer pattern stacking gradually, contact hole pattern and the second metal layer pattern.
More particularly, Fig. 2 schematically shows according to the diagram of the contact hole pattern of the domain structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention and the first metal layer pattern (for example,, as lower metal layer pattern).
As shown in Figure 2, according to the first metal layer pattern of the domain structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention, comprise: the M11 of first of rectangular ring and the second portion M12 of rectangle, the wherein said M11 of first is around second portion M12, and the described M11 of first and second portion M12 are spaced from each other with rectangular ring interval.And described rectangular ring interval has formed described air isolation structure.
Further as shown in Figure 2, according to the contact hole pattern of the domain structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention, comprise: be arranged in the first contact hole part V1 on three limits of the M11 of first, be arranged in the second contact hole part V2 on three limits at the rectangular ring interval between the described M11 of first and second portion M12 and the 3rd contact hole part V3 that is arranged in the layout rectangle of second portion M12.
Wherein, preferably, as shown in Figure 2, do not arrange that last limit of the M11 of first of the first contact hole part V1 is relative with last limit at rectangular ring interval of not arranging the second contact hole part V2.
More particularly, Fig. 3 schematically shows according to the diagram of the contact hole pattern of the domain structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention and the second metal layer pattern (for example,, as upper metal layers pattern).
As shown in Figure 3, according to the second metal layer pattern of the domain structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention, comprise: the first metal part M21 and the second metal part M22.Wherein, the first metal part M21 has covered the second contact hole part V2, and the second metal part M22 has covered the first contact hole part V1 and the 3rd contact hole part V3.
That is, it is upper that the second contact hole part V2 has been connected to the first metal part M21 of the second metal layer pattern, and the first contact hole part V1 and the 3rd contact hole part V3 have been connected on the second metal part M22 of the second metal layer pattern.
Therefore,, by the second metal layer pattern shown in the first metal layer pattern shown in Fig. 2 and Fig. 3 is gathered into folds according to the corresponding relation of contact hole, can find out according to the domain structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention.
Fig. 4 schematically shows according to the cross section structure of the MIM capacitor with intermetallic air isolation structure of the embodiment of the present invention.For example, the cross section structure shown in Fig. 4 may be the cross section structure figure along the dotted line intercepting shown in Fig. 2 and Fig. 3.
As a reference, Fig. 4 is tangent plane schematic diagram.In Fig. 2, middle bulk metal (second portion M12) and peripheral becket (M11 of first) can by conduct for example the second metal part M22 of the second metal layer pattern of upper metal layers pattern connect together as a pole plate of MIM electric capacity and draw.
And the space between middle bulk metal (second portion M12) and peripheral metal ring (M11 of first) can form air isolation structure, because contact hole can be opened this air isolation structure.Subsequently, filler can be filled in air isolation structure, form another pole plate of MIM capacitor, and this another pole plate is also connected together and drawn by the first metal part M21 of the second metal layer pattern as upper metal layers pattern.
Because the formation of MIM capacitor does not increase any extra technique and light shield, do not increase any cost, realized thus low cost.
More particularly, for example the material of described upper metal layers pattern and described lower metal layer pattern is Al, W etc.After forming the syndeton of described upper metal layers pattern and described lower metal layer pattern, the mode that forms air isolation structure is that using plasma strengthens tetraethoxysilane deposit silicon dioxide (PE-TEOS), and the thickness of silicon dioxide is for example 5000A～25000A.
In addition, the filler of contact hole can be Ti, TiN, and W or this composite material of three kinds or other suitable material, and the method for filling can be for example chemical vapour deposition (CVD) (CVD).
For realizing the performance of this domain, need to meet process capability and the window of technique.Referring to Fig. 2, definition: be spaced apart a between the described M11 of first and second portion M12; The minimum dimension of contact hole (the first contact hole V1, the second contact hole V2 and the 3rd contact hole V3) is b; Contact hole is c to the distance between metal.
In addition, the process window that also defines the minimum dimension of the first metal layer pattern is d, and the process window of the aligning of the first metal layer pattern is e; The process window of the minimum dimension of contact hole is f, and the process window of the aligning of contact hole is g; Preferably need to meet following condition:
a＞2b+d+e+f+g
c＞(a-b-d-e-f-g)/2
According to another preferred embodiment of the invention, the present invention also provides a kind of integrated circuit of the domain structure of the MIM capacitor with intermetallic air isolation structure described in above preferred embodiment that adopted according to the present invention.
Be understandable that, although the present invention with preferred embodiment disclosure as above, yet above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (8)
1. a domain structure with the MIM capacitor of intermetallic air isolation structure, is characterized in that comprising: the first metal layer pattern stacking gradually, contact hole pattern and the second metal layer pattern;
Wherein, described the first metal layer pattern comprises: the first of rectangular ring and the second portion of rectangle, and wherein said first is around second portion, and described first and second portion are spaced from each other with rectangular ring interval;
Described contact hole pattern comprises: be arranged in the first contact hole part on three limits of first, be arranged in the second contact hole part on three limits at the rectangular ring interval between described first and second portion and the 3rd contact hole part that is arranged in the layout rectangle of second portion;
The second metal layer pattern comprises: the first metal part and the second metal part, and wherein, the first metal has partly covered the second contact hole part, and the second metal has partly covered the first contact hole part and the 3rd contact hole part.
2. the domain structure with the MIM capacitor of intermetallic air isolation structure according to claim 1, is characterized in that, described rectangular ring interval has formed described air isolation structure.
3. the domain structure with the MIM capacitor of intermetallic air isolation structure according to claim 1 and 2, it is characterized in that, do not arrange that last limit of the first contact hole first partly is relative with last limit of not arranging the second contact hole rectangular ring interval partly.
4. the domain structure with the MIM capacitor of intermetallic air isolation structure according to claim 1 and 2, it is characterized in that, the described second portion of described the first metal layer pattern and described first partly connect together as a pole plate of described MIM electric capacity by the second metal of the second metal layer pattern.
5. the domain structure with the MIM capacitor of intermetallic air isolation structure according to claim 1 and 2, it is characterized in that, filler has been filled in the described second portion of described the first metal layer pattern and the contact hole inside in the rectangular ring interval between described first, forms thus another pole plate of described MIM capacitor.
6. the domain structure with the MIM capacitor of intermetallic air isolation structure according to claim 5, it is characterized in that, described another pole plate of described MIM capacitor is partly connected together and is drawn by described first metal of described the second metal layer pattern.
7. the domain structure with the MIM capacitor of intermetallic air isolation structure according to claim 1 and 2, it is characterized in that, define a that is spaced apart between the described M11 of first and second portion M12, the minimum dimension of described the first contact hole, described the second contact hole and described the 3rd contact hole is b, described the first contact hole, described the second contact hole and described the 3rd contact hole are c to the distance between metal, the process window of the minimum dimension of the first metal layer pattern is d, and the process window of the aligning of the first metal layer pattern is e; The process window of the minimum dimension of described the first contact hole, described the second contact hole and described the 3rd contact hole is f, and the process window of the aligning of described the first contact hole, described the second contact hole and described the 3rd contact hole is g; Satisfy condition: a>2b+d+e+f+g and c> (a-b-d-e-f-g)/2.
8. an integrated circuit that has adopted the domain structure of the described MIM capacitor with intermetallic air isolation structure of one of claim 1 to 7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210169549.4A CN102683319B (en) | 2012-05-28 | 2012-05-28 | Layout structure of metal-insulator-metal (MIM) capacitor with inter-metallic air isolation structure |
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| CN201210169549.4A CN102683319B (en) | 2012-05-28 | 2012-05-28 | Layout structure of metal-insulator-metal (MIM) capacitor with inter-metallic air isolation structure |
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| CN102683319B true CN102683319B (en) | 2014-11-26 |
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| CN107591388A (en) * | 2017-09-01 | 2018-01-16 | 格科微电子（上海）有限公司 | Metal layer insulating metal level capacitor and forming method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1835235A (en) * | 2005-03-17 | 2006-09-20 | 富士通株式会社 | Semiconductor device and mim capacitor |
| CN101461060A (en) * | 2006-06-02 | 2009-06-17 | 肯奈特公司 | Improved metal-insulator-metal capacitors |
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| JP2006332290A (en) * | 2005-05-25 | 2006-12-07 | Elpida Memory Inc | Capacitive element, semiconductor device, and terminal capacitance setting method of pad electrode thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1835235A (en) * | 2005-03-17 | 2006-09-20 | 富士通株式会社 | Semiconductor device and mim capacitor |
| CN101461060A (en) * | 2006-06-02 | 2009-06-17 | 肯奈特公司 | Improved metal-insulator-metal capacitors |
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