CN103730450A - Organic electric excitation light-emitting diode storage capacitor structure and manufacturing method thereof - Google Patents
Organic electric excitation light-emitting diode storage capacitor structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN103730450A CN103730450A CN201310597790.1A CN201310597790A CN103730450A CN 103730450 A CN103730450 A CN 103730450A CN 201310597790 A CN201310597790 A CN 201310597790A CN 103730450 A CN103730450 A CN 103730450A
- Authority
- CN
- China
- Prior art keywords
- metal level
- insulating barrier
- metal layer
- layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses an organic electric excitation light-emitting diode storage capacitor structure and a manufacturing method of the organic electric excitation light-emitting diode storage capacitor structure. The organic electric excitation light-emitting diode storage capacitor structure comprises a polycrystalline silicon layer, a first insulating layer, a first metal layer, a second insulating layer, a second metal layer and a third insulating layer, wherein the polycrystalline silicon layer, the first insulating layer, the first metal layer, the second insulating layer, the second metal layer and the third insulating layer are arranged on a glass substrate in sequence, and the first metal layer is parallel to the second metal layer, so that a first capacitor is formed; a third metal layer is arranged on the third insulating layer, the third metal layer is parallel to the second metal layer, so that a second capacitor is formed, contact holes are formed in the positions, corresponding to the first metal layer and the third metal layer, of the second insulating layer and the third insulating layer, an avoiding area used for avoiding the contact holes are formed on the second metal layer, and the third metal layer is in contact connection with the first metal layer through the contact holes, so that parallel connection of the first capacitor and the second capacitor is achieved. According to the organic electric excitation light-emitting diode storage capacitor structure, the third metal layer is additionally arranged on the first capacitor, the second capacitor is formed by the third metal layer and the second metal layer, the parallel connection between the second capacitor and the first capacitor is achieved through the contact holes, and as a result, the areas of the capacitors are reduced, and the capacity of the capacitors is maintained.
Description
Technical field
The present invention relates to a kind of AMOLED backboard pixel layout technique, relate in particular to a kind of electromechanical excitation light dipolar body storage capacitor structure and preparation method thereof.
Background technology
AMOLED backboard pixel layout area occupied maximum is exactly storage capacitors at present, as depicted in figs. 1 and 2, storage capacitors consists of upper and lower two-layer parallel metal layers 21 and 22, the larger capacitance of metal level area is larger, storage capacity is stronger, if can reduce the area of storage capacitors, can greatly dwindle the area of pixel panel, thereby reach high precision pixel interpolating (Precise Pixel Interpolation is called for short PPI) demand.If but storage capacitors area reduces, the capacitance of electric capacity will and then reduce, and affects image element circuit driving force.Along with AMOLED product resolution increases, image quality demand promotes simultaneously, and Pixel Dimensions is more and more less, and image element circuit becomes increasingly complex.How, in the situation that the storage capacitors area of plane reduces, can maintain capacitance again, keep electrical demand, be a crucial technical research direction.
Summary of the invention
Technical problem to be solved by this invention is to provide and a kind ofly can reduces electric capacity plane layout area maintaining capacitance constant in the situation that, reaches the electromechanical excitation light dipolar body storage capacitor structure that improves pixel quality.
For realizing above-mentioned technique effect, the invention discloses a kind of electromechanical excitation light dipolar body storage capacitor structure, be included in the polysilicon layer, one first insulating barrier, a first metal layer, one second insulating barrier, one second metal level and one the 3rd insulating barrier that on glass substrate, set gradually, described the first metal layer and described the second metal level are parallel to each other and form one first electric capacity, wherein:
On described the 3rd insulating barrier, be provided with one the 3rd metal level, described the 3rd metal level and described the second metal level are parallel to each other and form one second electric capacity, described the second insulating barrier is formed with and contacts hole with described the 3rd metal level position with the corresponding described the first metal layer of described the 3rd insulating barrier, described the second metal level is formed with for avoiding the region of dodging in described contact hole, described the 3rd metal level contacts hole contact conducting with described the first metal layer by described, thereby forms being connected in parallel of described the first electric capacity and described the second electric capacity.
The present invention is owing to having adopted above technical scheme, making it have following beneficial effect is: by increase one deck the 3rd metal level on the first electric capacity of the first metal layer and the second metal level formation on solid space, and make itself and the second metal level form one second electric capacity, by contact hole, make the first metal layer contact conducting with the 3rd metal level again, make the second electric capacity and the first electric capacity form two capacitance structures parallel with one another, so just can be in the situation that reducing the storage capacitance area of plane, maintain capacitance, do not affect image element circuit driving force.
The present invention further improves and is, described in dodge region area be greater than the area in described contact hole, and the deposition of material of described the 3rd insulating barrier is dodged region and is contacted between hole described in being filled in.When making the second metal level, need to avoid contacting position corresponding to hole, and it is larger than contact hole to dodge scope, such the 3rd insulating barrier is taken advantage of a situation and is deposited, after contact hole etching completes, sidewall at the second metal level still can retain the 3rd certain insulating layer material, flows to the second metal level contact of contact Nei Yu side, hole while avoiding depositing the 3rd metal level.
The invention also discloses a kind of preparation method of electromechanical excitation light dipolar body storage capacitor structure, on glass substrate, make successively a polysilicon layer, one first insulating barrier, a first metal layer, one second insulating barrier, one second metal level and one the 3rd insulating barrier, described the first metal layer and described the second metal level are parallel to each other and form one first electric capacity, wherein:
When making described the second metal level, form one and dodge region, on described the second metal level, make described the 3rd insulating barrier, and the material of described the 3rd insulating barrier is taken advantage of a situation described in being deposited on and dodged region;
In described the second insulating barrier and the corresponding described the first metal layer of described the 3rd insulating barrier with dodge regional location and form and contact hole;
On described the 3rd insulating barrier, make one the 3rd metal level, described the 3rd metal level and described the second metal level are parallel to each other and form one second electric capacity, and by described contact hole, make described the 3rd metal level contact conducting with described the first metal layer, thereby form being connected in parallel of described the first electric capacity and described the second electric capacity.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of existing storage capacitor structure.
Fig. 2 is the part sectioned view of Fig. 1.
Fig. 3 is the schematic diagram of electromechanical excitation light dipolar body storage capacitor structure of the present invention.
Fig. 4 is the part sectioned view of Fig. 3.
Fig. 5 is the local circuit schematic diagram of electromechanical excitation light dipolar body storage capacitor structure of the present invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation.
The invention discloses a kind of electromechanical excitation light dipolar body storage capacitor structure, consult shown in Fig. 3～Fig. 5, be included on glass substrate 11 and be disposed with a polysilicon layer 12, one first insulating barrier 13, a first metal layer 14, one second insulating barrier 15, one second metal level 16 and one the 3rd insulating barrier 17, the first metal layer 14 and the second metal level 16 are parallel to each other and form one first capacitor C 1.
On the 3rd insulating barrier 17, being provided with one the 3rd metal level 18, the three metal levels 18 and the second metal level 16 is parallel to each other and forms one second capacitor C 2.The second insulating barrier 15 is formed with and contacts hole 19 with the 3rd metal level 18 positions with the corresponding the first metal layer 14 of the 3rd insulating barrier 17, the second metal level 16 is formed with dodges region 190 for what avoid contacting hole 19, the area of dodging region 190 is greater than the area in contact hole 19, and the deposition of material of the 3rd insulating barrier 17 is filled in dodges region 190 and contacts between hole 19, after contact hole 19 etchings complete, sidewall at the second metal level 16 still can retain the 3rd certain insulating barrier 17 materials, while avoiding depositing the 3rd metal level 18, flow to the second metal level 16 contacts of contact 19Nei Yu side, hole, the 3rd metal level 18 directly contacts conducting with the first metal layer 14 by contact hole 19, thereby form being connected in parallel of the first capacitor C 1 and the second capacitor C 2.
The preparation method of electromechanical excitation light dipolar body storage capacitor structure of the present invention mainly comprises:
On glass substrate 11, evaporation is made polysilicon layer 12, on polysilicon layer 12, deposit the first insulating barrier 13, on the first insulating barrier 13, deposit the first metal layer 14 and carry out etching, on the first metal layer 14, deposit again the second insulating barrier 15, and at the second insulating barrier 15, deposit again the second metal level 16 and carry out etching, the first metal layer 14 and the second metal level 16 are parallel to each other and form the first capacitor C 1, when deposition the second metal level 16, in the second metal level 16 etchings, form and dodge region 190, on the second metal level 16, deposit the 3rd insulating barrier 17, and the material that makes the 3rd insulating barrier 17 is taken advantage of a situation to be deposited on and is dodged region 190 inner edges, sidewall at the second metal level 16 still can retain the 3rd certain insulating barrier 17 materials.
Then in the second insulating barrier 15 and the corresponding the first metal layer 14 of the 3rd insulating barrier 17 with dodge 190 positions, region and form and contact hole 19;
On the 3rd insulating barrier 17, deposit one the 3rd metal level 18 and carry out etching, the 3rd metal level 18 and the second metal level 16 are parallel to each other and form one second capacitor C 2, and by contact hole 19, make the 3rd metal level 18 contact conducting with the first metal layer 14, thereby form being connected in parallel of the first capacitor C 1 and the second capacitor C 2.
Electromechanical excitation light dipolar body storage capacitor structure of the present invention by increasing one deck the 3rd metal level 18 on solid space in the first capacitor C 1 of the first metal layer 14 and the second metal level 16 formations, and make itself and the second metal level 16 form one second capacitor C 2, by contact hole 19, the first metal layer 14 is contacted to conducting with the 3rd metal level 18 again, make the second capacitor C 2 and the first capacitor C 1 form two capacitance structures parallel with one another, so just can be in the situation that reducing the storage capacitance area of plane, maintain capacitance, do not affect image element circuit driving force.
Below embodiment has been described in detail the present invention by reference to the accompanying drawings, and those skilled in the art can make many variations example to the present invention according to the above description.Thereby some details in embodiment should not form limitation of the invention, the present invention will be usingd scope that appended claims defines as protection scope of the present invention.
Claims (3)
1. an electromechanical excitation light dipolar body storage capacitor structure, be included in the polysilicon layer, one first insulating barrier, a first metal layer, one second insulating barrier, one second metal level and one the 3rd insulating barrier that on glass substrate, set gradually, described the first metal layer and described the second metal level are parallel to each other and form one first electric capacity, it is characterized in that:
On described the 3rd insulating barrier, be provided with one the 3rd metal level, described the 3rd metal level and described the second metal level are parallel to each other and form one second electric capacity, described the second insulating barrier is formed with and contacts hole with described the 3rd metal level position with the corresponding described the first metal layer of described the 3rd insulating barrier, described the second metal level is formed with for avoiding the region of dodging in described contact hole, described the 3rd metal level contacts hole contact conducting with described the first metal layer by described, thereby forms being connected in parallel of described the first electric capacity and described the second electric capacity.
2. storage capacitor structure as claimed in claim 1, is characterized in that: described in dodge region area be greater than the area in described contact hole, and the deposition of material of described the 3rd insulating barrier is dodged region and is contacted between hole described in being filled in.
3. the preparation method of an electromechanical excitation light dipolar body storage capacitor structure, on glass substrate, make successively a polysilicon layer, one first insulating barrier, a first metal layer, one second insulating barrier, one second metal level and one the 3rd insulating barrier, described the first metal layer and described the second metal level are parallel to each other and form one first electric capacity, it is characterized in that:
When making described the second metal level, form one and dodge region, on described the second metal level, make described the 3rd insulating barrier, and the material of described the 3rd insulating barrier is taken advantage of a situation described in being deposited on and dodged region;
In described the second insulating barrier and the corresponding described the first metal layer of described the 3rd insulating barrier with dodge regional location and form and contact hole;
On described the 3rd insulating barrier, make one the 3rd metal level, described the 3rd metal level and described the second metal level are parallel to each other and form one second electric capacity, and by described contact hole, make described the 3rd metal level contact conducting with described the first metal layer, thereby form being connected in parallel of described the first electric capacity and described the second electric capacity.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310597790.1A CN103730450A (en) | 2013-11-22 | 2013-11-22 | Organic electric excitation light-emitting diode storage capacitor structure and manufacturing method thereof |
| TW102147109A TW201521255A (en) | 2013-11-22 | 2013-12-19 | Storage capacitor structure of an organic light emitting diode and the preparation method thereof |
| JP2014082859A JP2015102867A (en) | 2013-11-22 | 2014-04-14 | Organic light-emitting diode storage capacitor structure and manufacturing method of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310597790.1A CN103730450A (en) | 2013-11-22 | 2013-11-22 | Organic electric excitation light-emitting diode storage capacitor structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103730450A true CN103730450A (en) | 2014-04-16 |
Family
ID=50454467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310597790.1A Pending CN103730450A (en) | 2013-11-22 | 2013-11-22 | Organic electric excitation light-emitting diode storage capacitor structure and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2015102867A (en) |
| CN (1) | CN103730450A (en) |
| TW (1) | TW201521255A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019184321A1 (en) * | 2018-03-28 | 2019-10-03 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| CN111653577A (en) * | 2020-06-16 | 2020-09-11 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN111682047A (en) * | 2020-06-12 | 2020-09-18 | 福建华佳彩有限公司 | A compensation capacitor structure and a method for improving its capacitance |
| WO2022257092A1 (en) * | 2021-06-11 | 2022-12-15 | 华为技术有限公司 | Integrated device, semiconductor device, and integrated device manufacturing method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102675913B1 (en) | 2016-04-29 | 2024-06-17 | 엘지디스플레이 주식회사 | Backplane Substrate and Organic Light Emitting Display Device |
| JP6462035B2 (en) * | 2016-04-29 | 2019-01-30 | エルジー ディスプレイ カンパニー リミテッド | Backplane substrate and organic light emitting display device using the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1832070A (en) * | 2005-03-07 | 2006-09-13 | 三星电机株式会社 | Embedded multilayer chip capacitor and printed circuit board having same |
| CN101930846A (en) * | 2009-06-22 | 2010-12-29 | 财团法人工业技术研究院 | Multilayer capacitor and method for manufacturing the same |
| CN101989621A (en) * | 2009-08-06 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Metal-insulator-metal (MIM) capacitor and manufacturing method thereof |
| CN102548210A (en) * | 2010-12-29 | 2012-07-04 | 财团法人工业技术研究院 | Built-in capacitor substrate module |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0772506A (en) * | 1993-06-14 | 1995-03-17 | Casio Comput Co Ltd | Thin film transistor panel |
| JP4096585B2 (en) * | 2001-03-19 | 2008-06-04 | セイコーエプソン株式会社 | Display device manufacturing method, display device, and electronic apparatus |
| JP6079007B2 (en) * | 2012-07-03 | 2017-02-15 | 大日本印刷株式会社 | Display panel and display device including the display panel |
-
2013
- 2013-11-22 CN CN201310597790.1A patent/CN103730450A/en active Pending
- 2013-12-19 TW TW102147109A patent/TW201521255A/en unknown
-
2014
- 2014-04-14 JP JP2014082859A patent/JP2015102867A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1832070A (en) * | 2005-03-07 | 2006-09-13 | 三星电机株式会社 | Embedded multilayer chip capacitor and printed circuit board having same |
| CN101930846A (en) * | 2009-06-22 | 2010-12-29 | 财团法人工业技术研究院 | Multilayer capacitor and method for manufacturing the same |
| CN101989621A (en) * | 2009-08-06 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Metal-insulator-metal (MIM) capacitor and manufacturing method thereof |
| CN102548210A (en) * | 2010-12-29 | 2012-07-04 | 财团法人工业技术研究院 | Built-in capacitor substrate module |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019184321A1 (en) * | 2018-03-28 | 2019-10-03 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| US11094766B2 (en) | 2018-03-28 | 2021-08-17 | Boe Technology Group Co., Ltd. | Array substrate, display panel, and display device |
| CN111682047A (en) * | 2020-06-12 | 2020-09-18 | 福建华佳彩有限公司 | A compensation capacitor structure and a method for improving its capacitance |
| CN111653577A (en) * | 2020-06-16 | 2020-09-11 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN111653577B (en) * | 2020-06-16 | 2023-10-27 | 京东方科技集团股份有限公司 | Display substrate and display device |
| US12167642B2 (en) | 2020-06-16 | 2024-12-10 | Beijing Boe Technology Development Co., Ltd. | Display substrate and display device |
| WO2022257092A1 (en) * | 2021-06-11 | 2022-12-15 | 华为技术有限公司 | Integrated device, semiconductor device, and integrated device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201521255A (en) | 2015-06-01 |
| JP2015102867A (en) | 2015-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108376672B (en) | Array substrate and preparation method thereof, and display device | |
| CN103730450A (en) | Organic electric excitation light-emitting diode storage capacitor structure and manufacturing method thereof | |
| TWI520310B (en) | Back channel etching metal oxide thin film transistor and process | |
| CN102569250B (en) | High-density capacitor and electrode leading-out method thereof | |
| US9721976B2 (en) | Thin film transistor and fabrication method thereof, array substrate and display panel | |
| CN102945846B (en) | Array base palte and manufacture method, display unit | |
| JP6462035B2 (en) | Backplane substrate and organic light emitting display device using the same | |
| CN104733492A (en) | Organic light-emitting displaying device and preparing method thereof | |
| CN108352358A (en) | amorphous metal film nonlinear resistor | |
| CN109671722B (en) | Organic light emitting diode array substrate and manufacturing method thereof | |
| CN104716157A (en) | Array substrate of organic light-emitting display device and manufacturing method thereof | |
| CN106292100B (en) | Array substrate and liquid crystal display panel with same | |
| CN103219288B (en) | Semiconductor device and forming method thereof | |
| CN103700645A (en) | MOM (metal-oxide-metal) capacitor and manufacturing method thereof | |
| CN103839877A (en) | Semiconductor structure and forming method thereof | |
| US9269761B2 (en) | Metal-insulator-metal capacitor | |
| CN103426728A (en) | Capacitor structure and manufacturing method thereof | |
| US9960285B2 (en) | Contact structure | |
| US9741654B2 (en) | Integrated circuit having slot via and method of forming the same | |
| US10014214B2 (en) | Electronic device including moat power metallization in trench | |
| US9142607B2 (en) | Metal-insulator-metal capacitor | |
| CN101097912A (en) | Capacitance structure for enhancing capacitance of flat capacitance | |
| CN102751177A (en) | Capacitor structure and preparation method thereof | |
| KR101386911B1 (en) | Pilla type vertical dram cell and fabrication method therefor | |
| KR100928511B1 (en) | Semiconductor device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140416 |