CN102637662B - Semiconductor device using solder alloy - Google Patents
Semiconductor device using solder alloy Download PDFInfo
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- CN102637662B CN102637662B CN201210102888.0A CN201210102888A CN102637662B CN 102637662 B CN102637662 B CN 102637662B CN 201210102888 A CN201210102888 A CN 201210102888A CN 102637662 B CN102637662 B CN 102637662B
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- solder alloy
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- insulating substrate
- tin
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 81
- 239000000956 alloy Substances 0.000 title claims abstract description 81
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 70
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 38
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 28
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 28
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 239000000919 ceramic Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000003466 welding Methods 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 18
- 239000000203 mixture Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000032683 aging Effects 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 235000011837 pasties Nutrition 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000004087 circulation Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
- C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A conductor pattern 3 on an insulative substrate 10 having a semiconductor chip 4 and a heat sink plate 8 are joined with a Sn-Sb-Ge solder alloy 9 containing 3 to 5 wt% of antimony (Sb), not more than 0.2 wt% of germanium (Ge), and the balance of tin (Sn). The semiconductor chip 4 and a conductor pattern 2 on the insulative substrate 10 may be joined with the same type of solder alloy 5. The semiconductor chip 4 and a wiring conductor 6 may be joined with the same type of solder alloy 7.
Description
The division of the application's's " solder alloy and use the semiconductor device of this solder alloy " by name that to be Fuji Electrical Machinery Co., Ltd. submit on February 28th, 2006 No. 200610051542.7th, application for a patent for invention.
Cross-reference to related applications
The present invention is No. 2005-148730th, Japanese publication based on submitting on May 20th, 2005, and requires the priority of this application, and this application is incorporated by reference into herein in full.
Technical field
The present invention relates to the semiconductor device of lead-free solder alloy and this solder alloy of use, relate in particular to the solder alloy of tin (Sn)-antimony (Sb) system.
Background technology
Solder alloy need to have enough binding abilities and corrosion resistance conventionally.At the power semiconductor arrangement for power inverter (power converter) purposes, with solder alloy, the back side of semiconductor chip is connected with the conductive pattern that is positioned at the first type surface (front surface) of insulating substrate, described insulating substrate is the ceramic substrate in its surface with conductive pattern.This solder alloy need to have high thermal fatigue resistance intensity, and this is owing to can produce very large thermal strain (thermal strain) at welding region.The back side of semiconductor chip is connected with the lip-deep conductive pattern of insulating substrate in the mode of plane-welding, and the thermal coefficient of expansion of semiconductor chip is different from the thermal coefficient of expansion of conductive pattern.In addition, semiconductor chip can produce heat in conducting period.Therefore weld part branch stands very large thermal strain.
In being arranged on the power semiconductor arrangement (power semiconductor device) of power inverter (in motor vehicle for power conversion), the conductive pattern that is positioned at other first type surface (back side) of insulating substrate is connected with metal heating panel.Due to the non-constant width of welding region, for the solder alloy of this joint, must there is fabulous wetability.In addition, in the engaging zones between heating panel and the conductive pattern at the insulating substrate back side, because the thermal coefficient of expansion of insulating substrate (ceramic substrate) and heating panel is different, can produce very large thermal strain.Because the welding region of joint between the conductive pattern on heating panel and the insulating substrate back side is very large, the strain therefore producing at welding region is greater than the strain that connects place generation between the conductive pattern on aforesaid semiconductor chip and insulating substrate front surface.
Recently, consider environmental protection, need to have the solder alloy of not leaded (Pb).A kind of known this solder alloy is tin (Sn)-antimony (Sb) alloy.The key component that a kind of known solder alloy (for example seeing patent documentation 1) comprises is tin (Sn), also comprise be no more than 3.0 % by weight antimony (Sb), be no more than 3.5 % by weight silver (Ag), be no more than the germanium (Ge) of 0.1 % by weight, in addition, also comprise and be no more than the copper of 1.0 % by weight or be no more than the nickel of 1.0 % by weight or comprise this two kinds of elements simultaneously.Germanium (Ge), the antimony of 5-30 % by weight and the tin (Sn) of 65-90 % by weight that another kind of known solder alloy (for example seeing patent documentation 2) comprises 0.01-10 % by weight.
[patent documentation 1]
No. H11-58066th, the uncensored Patent Application Publication of Japan
[patent documentation 2]
No. 2003-94194th, the uncensored Patent Application Publication of Japan
The peritectic point of tin (Sn)-antimony (Sb) alloy is at antimony, to be the position of 8.5 % by weight, and peritectic temperature is 245 ℃, the antimony that the composition of common tin used (Sn)-antimony (Sb) alloy contains 8 % by weight.Tin (Sn)-antimony (Sb) alloy occurs to melt between 245 ℃ of 232 ℃ of the fusing points of tin (Sn) and peritectic points.Solid-liquid coexisting region is very narrow, and thermal endurance is good, by increasing the content of antimony (Sb), can obtain outstanding mechanical performance.Yet the antimony of high-load (Sb) can bring the problem that wetability is low when alloy welds.The oxidation of the solder compositions of tin (Sn) and so on can bring other problem, i.e. welding performance variation.
Summary of the invention
According to the problems referred to above, carried out research of the present invention.An object of the present invention is to provide a kind of tin (Sn)-antimony (Sb) system solder alloy with fabulous wetability and satisfactory welding performance.Another object of the present invention is to provide the semiconductor device that uses tin (Sn)-antimony (Sb) system solder alloy with fabulous wetability and satisfactory welding performance.
In order to solve described problem, reach these objects, the tin of the antimony that comprises 3-5 % by weight according to the solder alloy of the claims in the present invention 1, the germanium of trace and surplus.
According to the solder alloy of the claims in the present invention 2, be according to the alloy of the claims in the present invention 1, wherein the content of germanium is no more than 0.2 % by weight.
According to the semiconductor device of the use solder alloy of the claims in the present invention 3, comprise: the insulating substrate all on two surface with conductive pattern, the semiconductor chip being connected with conductive pattern on described insulating substrate front surface, the heating panel being connected with conductive pattern on the insulating substrate back side.With solder alloy, the conductive pattern on the insulating substrate back side and heating panel are welded the tin of the antimony that described solder alloy comprises 3-5 % by weight, the germanium of trace and surplus.
According to the semiconductor device of the use solder alloy of the claims in the present invention 4, according to the semiconductor device of the claims in the present invention 3, wherein with solder alloy, the conductive pattern on the back side of semiconductor chip and insulating substrate front surface is welded the tin of the antimony that described solder alloy comprises 3-5 % by weight, the germanium of trace and surplus.
According to the semiconductor device of the use welding alloy of the claims in the present invention 5, according to the semiconductor device of the claims in the present invention 3 or claim 4, wherein with solder alloy to being positioned at electrode in semiconductor chip surface and welding the tin of the antimony that described solder alloy comprises 3-5 % by weight, the germanium of trace and surplus for the conductor of wiring.
According to the semiconductor device of the use solder alloy of the claims in the present invention 6, be that wherein in solder alloy, the content of germanium is no more than 0.2 % by weight according to the semiconductor device of any one in the claims in the present invention 3-5.
According to the semiconductor device of the use welding alloy of the claims in the present invention 7, according to the semiconductor device of any one in the claims in the present invention 3-5, wherein said insulating substrate is the ceramic substrate being mainly comprised of aluminium oxide, aluminium nitride or silicon nitride, on two surfaces of substrate, all have copper pattern, described heating panel is made of copper.
According to the claims in the present invention 1-7, in tin (Sn), add antimony (Sb), the thermal endurance of gained alloy and thermal fatigue resistance intensity have all obtained raising.The fusion temperature of alloy raises, and thermal endurance improves.Tin (Sn) the grain coarsening phenomenon causing due to thermal stress has been subject to inhibition, has improved thermal ageing property.Here, because if the content of antimony is less than 3 % by weight, thermal lifetime can be very short, and the amount of the antimony (Sb) therefore adding is preferably at least 3 % by weight.If the content of antimony (Sb) surpasses 5 % by weight, the wetability of scolder can variation.The amount of the antimony therefore, adding (Sb) is preferably no more than 5 % by weight.
By add the germanium (Ge) of trace in tin (Sn)-antimony (Sb) alloy, when solder fusing, can form thin oxide-film, thereby suppress the oxidation of tin (Sn) and so on solder compositions, improve welding effect.The amount of the germanium herein adding (Ge) is preferably at least 0.01 % by weight, fully effectively to suppress oxidation.If Ge content surpasses 0.2 % by weight on the other hand, germanium (Ge) oxide-film can be grown blocked uply, and welding performance is caused to negative effect.Therefore, the amount of the germanium adding is wanted suitably, to be no more than 0.2 % by weight.Therefore when the addition of germanium is 0.01-0.2 % by weight, can provide gratifying welding performance and fabulous heat aging performance.
According to the present invention, make tin (Sn)-antimony (Sb) alloy with fabulous wetability and satisfactory welding performance.According to the present invention, made the semiconductor device of tin (Sn)-antimony (Sb) alloy that a kind of use has fabulous wetability and satisfactory welding performance.
Next with reference to the accompanying drawings to solder alloy of the present invention and use some preferred implementations of the semiconductor device of this solder alloy to be described in detail.
Accompanying drawing explanation
Fig. 1 is the sectional view of example that uses the semiconductor device of solder alloy of the present invention.
Symbol description
1 ceramic substrate
2,3 conductive patterns
4 semiconductor chips
5,7,9 solder alloys
6 wire conductors
8 heating panels
10 insulating substrates
Embodiment
In an electric furnace, melt raw material tin (Sn), antimony (Sb) and germanium (Ge) are prepared solder alloy.The purity of each raw material is equal to or higher than 99.99%.The antimony that consists of 3-5 % by weight of material therefor, the germanium of 0.01-0.2 % by weight, surplus is key component tin (Sn).
Next, will an example that use the semiconductor device of above-mentioned solder alloy be described below.Fig. 1 is the sectional view of this semiconductor device structure of explanation.Referring to Fig. 1, insulating substrate 10 comprises ceramic substrate 1 and is connected to the conductive pattern 2 and 3 on two faces of this ceramic substrate.Described ceramic substrate is mainly comprised of aluminium oxide, aluminium nitride or silicon nitride.The conductive pattern 2 being formed on ceramic substrate 1 front surface is metal conductor pattern of forming circuit.On the back side of ceramic substrate 1, there is metal conductor pattern 3.Described conductive pattern 2 and 3 is preferably comprised of cheapness and the high copper of thermal conductance.The backplate (not shown) on the back side of semiconductor chip 4 with metal film form.With the solder alloy 5 with aforementioned component, the conductive pattern on the front surface of these backplates and insulating substrate 10 is connected.
On the front surface of semiconductor chip 4, there is metal film front surface electrode (not shown).With the solder alloy 7 with above-mentioned composition, front surface electrode is connected with line conductor 6.With the solder alloy 9 with above-mentioned composition, the conductive pattern 3 on insulating substrate 10 back sides is connected with metallic heat radiating plate 8.Described heating panel is heat carrier, can conduct heat to the outside heat sink (not shown) of semiconductor shell.The heating panel copper that preferably thermal conductivity is high by cheapness becomes.
In conductive pattern 3 and the welding region between heating panel 8 on insulating substrate 10 back sides, can cause very large thermal strain due to thermal coefficient of expansion between the ceramic substrate 1 of insulating substrate 10 and heating panel 8 different.The thermal coefficient of expansion of copper particularly with large thermal coefficient of expansion is significantly different from ceramic substrate 1.Therefore, in the conductive pattern 3 on insulating substrate 10 back sides and the welding region between heating panel 8, can produce very large strain.For example, if heating panel is the material (alloy of aluminium or copper and molybdenum) that is less than copper by thermal coefficient of expansion, make, can reduce the strain producing due to thermal coefficient of expansion difference.Yet these material prices are expensive and thermal conductivity is low, cause the cooling performance variation of semiconductor device.
The solder alloy by use with above-mentioned composition comes bonding conductor pattern 3 and heating panel 8, can be in the situation that use cheapness and the high copper of thermal conductivity to obtain fabulous cooling performance and gratifying welding performance.Can connect front surface electrode and the wire conductors 6 of semiconductor chip 4 with forming different scolders from solder alloy 5,7,9, and be used for connecting the backplate of semiconductor chip 4 and the conductive pattern 2 on insulating substrate 10.
Embodiment
Embodiment 1 to 4
Preparation has tin (Sn)-antimony (Sb) system solder alloy of following composition: the antimony of 5.0 % by weight (Sb), four kinds of content are at the germanium (Ge) of 0.01-0.2 % by weight scope and the tin (Sn) of surplus.Ge content in embodiment 1 is 0.01 % by weight, and the Ge content in embodiment 2 is 0.05 % by weight, and the Ge content in embodiment 3 is 0.1 % by weight, and the Ge content in embodiment 4 is 0.2 % by weight.
Embodiment 5 to 8
Preparation has tin (Sn)-antimony (Sb) system solder alloy of following composition: the antimony of 3.0 % by weight (Sb), four kinds of content are at the germanium (Ge) of 0.01-0.2 % by weight scope and the tin (Sn) of surplus.Ge content in embodiment 5 is 0.01 % by weight, and the Ge content in embodiment 6 is 0.05 % by weight, and the Ge content in embodiment 7 is 0.1 % by weight, and the Ge content in embodiment 8 is 0.2 % by weight.
Comparative example 1 to 4
The solder alloy of preparation not germanic (Ge) contrasts.Sb content in comparative example 1 is 6.0 % by weight, and the Sb content in comparative example 2 is 5.0 % by weight, and the Sb content in comparative example 3 is 3.0 % by weight, and the Sb content in comparative example 4 is 2.0 % by weight; Component remaining in each comparative example is tin (Sn).
Adopt meniscus to measure (meni scograph) method, use the scaling powder (soldering flux) of RMA type, measure the wetability (wet strength (wet strength)) of the solder alloy of each preparation.Measure ratio and the angle of wetting of the wetted area on each solder alloy, and observe the oxide-film formational situation on melt.Also evaluate the thermal lifetime of various solder alloys.When evaluating thermal lifetime, use various solder alloys that the metal conductor pattern on insulating substrate and metallic heat radiating plate are welded, made connector (conjugated body) (combination of heating panel 8 and insulating substrate 10, with solder alloy 9, insulating substrate 10 and the heating panel 8 with conductive pattern 3 are coupled together, as shown in Figure 1).
These connectors are applied repeatedly to the temperature cycles of-40 ℃ to 125 ℃.1000 circulations, measure afterwards the length of crackle.Table 1 has been listed result.In " oxide-film " hurdle of table 1, * represent respectively significantly to generate oxide-film and few oxide-film that generates with ◎.
Table 1
Table 1 has shown following content.Along with the increase of the antimony adding (Sb), heat aging performance has obtained improvement, but further increases the content of antimony after having surpassed 5.0 % by weight again, can further not improve heat aging performance.And if antimony (Sb) content is less than 3.0 % by weight, can make the remarkable variation of heat aging performance.Add the germanium of 0.01-0.2 % by weight significantly to suppress the formation of oxide-film on fusion welding, improved wetability simultaneously.
Add the welding of germanium (Ge) convection cell and reflow soldering all effectively same.In addition, germanium act in pasty state scolder and sheet scolder all effectively same.Along with Ge content raises from 0.01 % by weight, while adding the germanium (Ge) that surpasses 0.01 % by weight, wetability and oxide-film formational situation there is no remarkable difference.The germanium adding (Ge) not only can suppress the oxidation of tin (Sn) in welding process, and can in preparing the process of solder alloy, suppress the oxidation of tin, thereby can prepare, has seldom oxide-film and high-quality solder alloy.
In the method for the preparation of the solder alloy powder of pasty state scolder for example, the particle of wishing powder is spherical.In order to make spheric granules powder, must under the condition that only has surface tension acts, prepare this powder, this condition need to be suppressed to minimum degree as far as possible by surface oxidation.Therefore, should add germanium (Ge) to suppress surface oxidation.The oxidation rate of germanium (Ge) is stable, only adds on a small quantity and just can keep effect.
As mentioned above, in tin (Sn)-antimony (Sb) alloy, add germanium (Ge) to provide and there is the solder alloy of fabulous heat aging performance, the solder alloy that there is stable on heating solder alloy, there is the solder alloy of high wettability and there is gratifying welding performance.Due to this alloy not leaded (Pb), provide and can not cause the solder alloy of environmental pollution.
As mentioned above, by solder alloy of the present invention and the semiconductor device applications of using solder alloy of the present invention in various very helpful while thering is the equipment of welding assembly, be specially adapted to the semiconductor device that power conversion is used, be used on the power conversion equipment in motor vehicle.
Claims (2)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005148730A JP4635715B2 (en) | 2005-05-20 | 2005-05-20 | Solder alloy and semiconductor device using the same |
| JP2005-148730 | 2005-05-20 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100515427A Division CN1864909B (en) | 2005-05-20 | 2006-02-28 | Solder alloy and semiconductor device using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102637662A CN102637662A (en) | 2012-08-15 |
| CN102637662B true CN102637662B (en) | 2014-09-24 |
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Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100515427A Active CN1864909B (en) | 2005-05-20 | 2006-02-28 | Solder alloy and semiconductor device using the same |
| CN201210102888.0A Active CN102637662B (en) | 2005-05-20 | 2006-02-28 | Semiconductor device using solder alloy |
| CN2010102407673A Active CN101905388B (en) | 2005-05-20 | 2006-02-28 | Method for manufacturing semiconductor device |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2006100515427A Active CN1864909B (en) | 2005-05-20 | 2006-02-28 | Solder alloy and semiconductor device using the same |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010102407673A Active CN101905388B (en) | 2005-05-20 | 2006-02-28 | Method for manufacturing semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20060263235A1 (en) |
| JP (1) | JP4635715B2 (en) |
| CN (3) | CN1864909B (en) |
| DE (1) | DE102006005271B4 (en) |
| GB (1) | GB2426251B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008221330A (en) * | 2007-03-16 | 2008-09-25 | Fuji Electric Holdings Co Ltd | Solder alloy |
| US20100328247A1 (en) * | 2008-02-22 | 2010-12-30 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Touch panel sensor |
| JP2009283741A (en) * | 2008-05-23 | 2009-12-03 | Fuji Electric Device Technology Co Ltd | Semiconductor device |
| TWI541488B (en) * | 2011-08-29 | 2016-07-11 | 奇鋐科技股份有限公司 | Heat dissipation device and method of manufacturing same |
| CN102717201B (en) * | 2012-07-04 | 2015-04-22 | 深圳市斯特纳新材料有限公司 | High-strength high-temperature soldering flux with corrosion resistance |
| JP6713106B2 (en) * | 2014-02-24 | 2020-06-24 | 株式会社弘輝 | Lead-free solder alloy, solder material and joint structure |
| CN108428682B (en) * | 2018-04-13 | 2020-08-18 | 江西江铃集团新能源汽车有限公司 | Power module and preparation method thereof |
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| CN1195592A (en) * | 1997-02-15 | 1998-10-14 | 三星电子株式会社 | Lead-Free Alloys for Solder |
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| JPS62230493A (en) * | 1986-03-31 | 1987-10-09 | Taruchin Kk | Solder alloy |
| JP3269745B2 (en) * | 1995-01-17 | 2002-04-02 | 株式会社日立製作所 | Modular semiconductor device |
| JPH09330941A (en) * | 1996-06-13 | 1997-12-22 | Toshiba Corp | High heat-conduction paste solder and semiconductor device |
| JP3226213B2 (en) * | 1996-10-17 | 2001-11-05 | 松下電器産業株式会社 | Solder material and electronic component using the same |
| US6033488A (en) * | 1996-11-05 | 2000-03-07 | Samsung Electronics Co., Ltd. | Solder alloy |
| US6179935B1 (en) * | 1997-04-16 | 2001-01-30 | Fuji Electric Co., Ltd. | Solder alloys |
| JP3353662B2 (en) * | 1997-08-07 | 2002-12-03 | 富士電機株式会社 | Solder alloy |
| WO2000076717A1 (en) * | 1999-06-11 | 2000-12-21 | Nippon Sheet Glass Co., Ltd. | Lead-free solder |
| JP2002232022A (en) * | 2001-01-31 | 2002-08-16 | Aisin Seiki Co Ltd | Thermoelectric module and its manufacturing method |
| JP2002321084A (en) * | 2001-04-26 | 2002-11-05 | Sumitomo Metal Mining Co Ltd | Soldering alloy for joining electronic parts |
| TW592872B (en) * | 2001-06-28 | 2004-06-21 | Senju Metal Industry Co | Lead-free solder alloy |
| JP2003094194A (en) * | 2001-07-16 | 2003-04-02 | Uchihashi Estec Co Ltd | Fixing method for soldering material and member of electronic part |
| US20030178719A1 (en) * | 2002-03-22 | 2003-09-25 | Combs Edward G. | Enhanced thermal dissipation integrated circuit package and method of manufacturing enhanced thermal dissipation integrated circuit package |
| JP2004017093A (en) * | 2002-06-17 | 2004-01-22 | Toshiba Corp | Lead-free solder alloy and lead-free solder paste using the same |
| CN1230567C (en) * | 2003-07-02 | 2005-12-07 | 中国科学院金属研究所 | Industrial pure tin with resistance to liquid surface oxidizing and application |
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2005
- 2005-05-20 JP JP2005148730A patent/JP4635715B2/en active Active
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2006
- 2006-01-30 GB GB0601776A patent/GB2426251B/en not_active Expired - Fee Related
- 2006-02-02 US US11/345,516 patent/US20060263235A1/en not_active Abandoned
- 2006-02-06 DE DE102006005271A patent/DE102006005271B4/en active Active
- 2006-02-28 CN CN2006100515427A patent/CN1864909B/en active Active
- 2006-02-28 CN CN201210102888.0A patent/CN102637662B/en active Active
- 2006-02-28 CN CN2010102407673A patent/CN101905388B/en active Active
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| CN1195592A (en) * | 1997-02-15 | 1998-10-14 | 三星电子株式会社 | Lead-Free Alloys for Solder |
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| Title |
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| JP特开2002-321084A 2002.11.05 |
| JP特开2003-094194A 2003.04.02 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102006005271A1 (en) | 2006-11-23 |
| JP2006320955A (en) | 2006-11-30 |
| US20060263235A1 (en) | 2006-11-23 |
| JP4635715B2 (en) | 2011-02-23 |
| GB2426251B (en) | 2007-10-10 |
| CN101905388B (en) | 2012-05-30 |
| CN101905388A (en) | 2010-12-08 |
| GB0601776D0 (en) | 2006-03-08 |
| DE102006005271B4 (en) | 2012-12-06 |
| CN1864909B (en) | 2012-05-30 |
| GB2426251A (en) | 2006-11-22 |
| CN1864909A (en) | 2006-11-22 |
| CN102637662A (en) | 2012-08-15 |
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