CN102569052B - Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof - Google Patents
Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof Download PDFInfo
- Publication number
- CN102569052B CN102569052B CN201110356287.8A CN201110356287A CN102569052B CN 102569052 B CN102569052 B CN 102569052B CN 201110356287 A CN201110356287 A CN 201110356287A CN 102569052 B CN102569052 B CN 102569052B
- Authority
- CN
- China
- Prior art keywords
- nickel silicide
- polysilicon
- grid
- carries out
- eliminating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a device structure conducive to eliminating U-shaped nickel silicide and a corresponding technology thereof. The device structure comprises polycrystalline silicon; the top of the polycrystalline silicon is locally grooved; the grooving technology adopts a new photomask and forms a grid by single imaging and etching formation; and when nickel reacts with the polycrystalline silicon to form a silicide, a grid nickel silicide with flat morphology is finally formed. Through the device structure conducive to eliminating U-shaped nickel silicide and the corresponding technology thereof disclosed by the invention, the grid nickel silicide with flat morphology is finally formed by a method of forming a grid locally grooved at the top of the polycrystalline silicon.
Description
Technical field
The present invention relates to a kind of technical field of manufacturing semiconductors, particularly relate to a kind of device contributing to eliminating U-shaped nickel silicide.
Background technology
In existing nickel suicide structure, the normal technical process adopting side wall shaping.But (dry etching) very easily causes grid top rake in side wall molding process, meanwhile, the oxide between grid and side wall can form the cavity of certain depth in integration process.Fig. 1 is the nickel silicide of existing employing side wall molding process, shown in Figure 1.In fact react when nickel and polysilicon form silicide time, nickel is a side of movement, and therefore finally grid nickel silicide (NiSi) is easy to present inverted U-shaped.
Summary of the invention
The invention provides and a kind ofly contribute to eliminating the device architecture of U-shaped nickel silicide and corresponding technique thereof, effectively solve the problem that existing U-shaped nickel silicide causes top rake and cavity etc.
To achieve these goals, the technical scheme that the present invention takes is:
A kind of contributing to, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, wherein, include polysilicon, at the top differential trench open of described polysilicon, this grooving processes adopts new light shield, adopts single to be graphically shaped with etching, to form grid, when nickel and described polysilicon react form silicide time, be finally configured as the grid nickel silicide that pattern is straight.
Above-mentioned contributing to, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, and wherein, the first step, described polysilicon carries out thin film deposition, and then spin coating photoresistance carries out photoetching, then adopts dry etching to open oxide.
Above-mentioned contributing to, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, and wherein, second step, removes photoresistance, then carry out high-temperature oxydation.
Above-mentioned contributing to, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, and wherein, the 3rd step, carries out etching polysilicon gate, then remove oxide layer.
A kind of contributing to, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, wherein, include polysilicon, cvd silicon oxide and silicon nitride film are as substrate successively, at the top differential trench open of described polysilicon, this grooving processes adopts polysilicon gate backlight cover, coordinate thin film deposition, autoregistration dry etching is adopted to form top portions of gates fluting, graphical and twice dry etching of single, to form grid, when nickel and described polysilicon react form silicide time, be finally configured as the grid nickel silicide that pattern is straight.
Above-mentioned contributing to, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, and wherein, the first step, at described polysilicon and silica, adopts backlight cover carry out patterning process the nitride silicon based end.
Above-mentioned contributing to, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, and wherein, second step, carries out the deposition of silicon nitride.
Above-mentioned contributing to, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, and wherein, the 3rd step, carries out dry etching.
Above-mentioned contributing to, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, and wherein, the 4th step, carries out high-temperature oxydation
Above-mentioned contributing to, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, and wherein, the 5th step, carries out etching polysilicon gate, then remove oxide layer.
The present invention is owing to have employed above-mentioned technology, and the good effect making it to have is:
By the gate method of shaped crown differential trench open on the polysilicon, thus finally form the straight grid nickel silicide of pattern.
Accompanying drawing explanation
Fig. 1 is the nickel silicide of existing employing side wall molding process;
Fig. 2 is a kind of schematic diagram contributing to the first technological process first step of the device architecture eliminating U-shaped nickel silicide of the present invention;
Fig. 3 is a kind of schematic diagram contributing to the first technological process second step of the device architecture eliminating U-shaped nickel silicide of the present invention;
Fig. 4 is a kind of schematic diagram contributing to the first technological process the 3rd step of the device architecture eliminating U-shaped nickel silicide of the present invention;
Fig. 5 is a kind of schematic diagram contributing to the second technological process first step of the device architecture eliminating U-shaped nickel silicide of the present invention;
Fig. 6 is a kind of schematic diagram contributing to the second technological process second step of the device architecture eliminating U-shaped nickel silicide of the present invention;
Fig. 7 is a kind of schematic diagram contributing to the second technological process the 3rd step of the device architecture eliminating U-shaped nickel silicide of the present invention;
Fig. 8 is a kind of schematic diagram contributing to the second technological process the 4th step of the device architecture eliminating U-shaped nickel silicide of the present invention;
Fig. 9 is a kind of schematic diagram contributing to the second technological process the 5th step of the device architecture eliminating U-shaped nickel silicide of the present invention.
Embodiment
Provide below in conjunction with accompanying drawing that the present invention is a kind of contributes to eliminating the device architecture of U-shaped nickel silicide and the embodiment of corresponding technique thereof.
First method of the present invention:
Fig. 2 is a kind of schematic diagram contributing to the first technological process first step of the device architecture eliminating U-shaped nickel silicide of the present invention, Fig. 3 is a kind of schematic diagram contributing to the first technological process second step of the device architecture eliminating U-shaped nickel silicide of the present invention, Fig. 4 is a kind of schematic diagram contributing to the first technological process the 3rd step of the device architecture eliminating U-shaped nickel silicide of the present invention, refers to shown in Fig. 2 to Fig. 4.A kind of contributing to of the present invention, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, include polysilicon 4, slot in local, the top of polysilicon 4, and the technique of this fluting adopts new light shield, single is adopted graphically to be shaped with etching, effectively to form grid.When nickel and polysilicon 4 react formation silicide, it is made finally to be configured as the straight grid nickel silicide of pattern.
The present invention also has following execution mode on above-mentioned basis:
Please continue see shown in Fig. 2 to Fig. 4.The first step, polysilicon 4 carries out thin film deposition, then spin coating photoresistance, then adopts dry etching to open silicon oxide layer.Namely by flim stack deposition+PR patterning+dry etching (oxide open) realize as shown in Figure 2 there is respectively oxide 5 and PR layer 6 on polysilicon 4.Second step, removes the photoresist layer 6 on polysilicon 4, then carries out high temperature oxidation process.Namely pass through PR remove+oxidation to realize polysilicon 4 as shown in Figure 3, and photoresist layer 6 is removed.3rd step, polysilicon 4 carries out etching polysilicon gate, then removes oxide 5.Namely normal poly etching+oxide strip is passed through to realize polysilicon 4 as shown in Figure 4.By the grid of first shaped crown differential trench open, finally form the straight grid nickel silicide of pattern.
Second method of the present invention:
Fig. 5 is a kind of schematic diagram contributing to the second technological process first step of the device architecture eliminating U-shaped nickel silicide of the present invention, Fig. 6 is a kind of schematic diagram contributing to the second technological process second step of the device architecture eliminating U-shaped nickel silicide of the present invention, Fig. 7 is a kind of schematic diagram contributing to the second technological process the 3rd step of the device architecture eliminating U-shaped nickel silicide of the present invention, Fig. 8 is a kind of schematic diagram contributing to the second technological process the 4th step of the device architecture eliminating U-shaped nickel silicide of the present invention, Fig. 9 is a kind of schematic diagram contributing to the second technological process the 5th step of the device architecture eliminating U-shaped nickel silicide of the present invention, refer to shown in Fig. 5 to Fig. 9.A kind of contributing to of the present invention, eliminates the device architecture of U-shaped nickel silicide and corresponding technique thereof, include polysilicon 4, cvd silicon oxide 5 and silicon nitride 7 film are as substrate successively, slot in local, the top of polysilicon 4, and the technique of this fluting adopts polysilicon gate backlight cover, and coordinate thin film deposition, adopt autoregistration dry etching to form top portions of gates fluting.When nickel and polysilicon 4 react formation silicide, it is made finally to be configured as the straight grid nickel silicide of pattern.
The present invention also has following execution mode on above-mentioned basis:
Please continue see shown in Fig. 5 to Fig. 9.The first step, polysilicon 4 and laminated construction thereof adopts grid backlight cover carry out patterning process and is opened by silicon nitride.Namely realize that monocrystalline silicon piece 2 as shown in Figure 5 has gate oxide 3, polysilicon 4, silica 5 and silicon nitride 7 respectively by reverse poly mask patterning+SiN opening.Second step, carries out the deposition of thin layer silicon nitride to the silicon nitride 7 on polysilicon 4, form the thin layer silicon nitride deposited layer 8 on silicon nitride 7 as shown in Figure 6.3rd step, carries out further dry etching to polysilicon 4, eliminates silicon nitride 7, as shown in Figure 7.4th step, carries out high-temperature oxydation to polysilicon 4, makes it have oxide at polysilicon layer 4, as shown in Figure 8.5th step, polysilicon 4 carries out grid etch, then removes oxide 5.Namely normal poly etching+oxide strip is passed through to realize polysilicon 4 as shown in Figure 4.By the grid of first shaped crown differential trench open, finally form the straight grid nickel silicide of pattern.
In sum, adopt the present invention a kind of contributing to eliminate the device architecture of U-shaped nickel silicide and corresponding technique thereof, by the gate method of shaped crown differential trench open on the polysilicon, thus finally form the straight grid nickel silicide of pattern.
Above specific embodiments of the invention are described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, the method wherein do not described in detail to the greatest extent and processing procedure are construed as to be implemented with the common mode in this area; Those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present invention.All any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1. prepare the technique contributing to the device architecture eliminating U-shaped nickel silicide for one kind, it is characterized in that, include polysilicon, cvd silicon oxide and silicon nitride film are as substrate successively, at the top differential trench open of described polysilicon, this grooving processes adopts polysilicon gate backlight cover, coordinate thin film deposition, autoregistration dry etching is adopted to form top portions of gates fluting, graphical and twice dry etching of single, to form grid, when nickel and described polysilicon react form silicide time, be finally formed as the grid nickel silicide that pattern is straight;
Wherein, specifically comprise the following steps:
The first step, at described polysilicon and silica, adopts backlight cover carry out patterning process the nitride silicon based end to be opened by described silicon nitride film;
Second step, carries out the deposition of thin layer silicon nitride on described silicon nitride film;
3rd step, carries out dry etching;
4th step, carries out high-temperature oxydation and generates oxide layer;
5th step, carries out etching polysilicon gate, and removes described oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110356287.8A CN102569052B (en) | 2011-11-11 | 2011-11-11 | Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110356287.8A CN102569052B (en) | 2011-11-11 | 2011-11-11 | Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102569052A CN102569052A (en) | 2012-07-11 |
| CN102569052B true CN102569052B (en) | 2015-06-17 |
Family
ID=46414166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110356287.8A Active CN102569052B (en) | 2011-11-11 | 2011-11-11 | Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102569052B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319881A (en) * | 2000-03-09 | 2001-10-31 | 三星电子株式会社 | Method for forming self-aligning contact welding disc in metal inlay grid technology |
| CN102437186A (en) * | 2011-08-04 | 2012-05-02 | 上海华力微电子有限公司 | Device structure beneficial to elimination of inverted U-shaped nickel silicide and preparation process thereof |
-
2011
- 2011-11-11 CN CN201110356287.8A patent/CN102569052B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319881A (en) * | 2000-03-09 | 2001-10-31 | 三星电子株式会社 | Method for forming self-aligning contact welding disc in metal inlay grid technology |
| CN102437186A (en) * | 2011-08-04 | 2012-05-02 | 上海华力微电子有限公司 | Device structure beneficial to elimination of inverted U-shaped nickel silicide and preparation process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102569052A (en) | 2012-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104979173B (en) | Semiconductor structure and forming method thereof | |
| CN103871968A (en) | Manufacturing method of MOS (metal oxide semiconductor) transistor | |
| CN106298940A (en) | The preparation method of VDMOS integrated ESD structure | |
| CN104347375B (en) | The method that barrier layer performs etching to grid polycrystalline silicon is done using oxide-film | |
| CN109545855B (en) | Preparation method of active region of silicon carbide double-groove MOSFET device | |
| CN102496568B (en) | Fabrication method of trench power device structure | |
| CN102569052B (en) | Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof | |
| CN113078102B (en) | Method for manufacturing semiconductor structure | |
| CN103178014B (en) | A kind of manufacture method of U-shaped groove | |
| CN103681274A (en) | Semiconductor device manufacturing method | |
| CN103390558B (en) | The forming method of transistor | |
| CN113496949B (en) | Method for improving electric leakage phenomenon after forming metal silicide layer on surface of gate structure | |
| CN102543716B (en) | The forming method of blocking layer of metal silicide | |
| CN113471078A (en) | SGT-MOSFET and manufacturing method thereof | |
| CN107978555A (en) | The process of grid curb wall | |
| TWI528424B (en) | Method for forming shielding gate in gold oxide half field effect transistor | |
| CN102856179A (en) | Method for forming semiconductor device | |
| CN102446765B (en) | Manufacturing method of small-sized MOS (Metal Oxide Semiconductor) device | |
| CN104637799B (en) | Fully self aligned high-density, trench gate field-effect method, semi-conductor device manufacturing method | |
| CN105225957B (en) | Slot type power device production method and slot type power device | |
| CN111696867B (en) | Semiconductor structures and formation methods | |
| CN101800193B (en) | Fabrication method of trench type metal oxide semiconductor element | |
| CN107359121B (en) | Preparation method of VDMOS power device and VDMOS power device | |
| CN103367133A (en) | High-dielectric-constant metal gate production method | |
| CN105789329B (en) | Optimize the cavity type trench schottky power device and its manufacturing method of structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |