CN102569052A - Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof - Google Patents
Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof Download PDFInfo
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- CN102569052A CN102569052A CN2011103562878A CN201110356287A CN102569052A CN 102569052 A CN102569052 A CN 102569052A CN 2011103562878 A CN2011103562878 A CN 2011103562878A CN 201110356287 A CN201110356287 A CN 201110356287A CN 102569052 A CN102569052 A CN 102569052A
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- Prior art keywords
- nickel silicide
- eliminate
- polysilicon
- helps
- device architecture
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021334 nickel silicide Inorganic materials 0.000 title claims abstract description 61
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 238000005516 engineering process Methods 0.000 title claims abstract description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 11
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920005591 polysilicon Polymers 0.000 claims description 47
- 238000001312 dry etching Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000000427 thin-film deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 206010010144 Completed suicide Diseases 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention discloses a device structure conducive to eliminating U-shaped nickel silicide and a corresponding technology thereof. The device structure comprises polycrystalline silicon; the top of the polycrystalline silicon is locally grooved; the grooving technology adopts a new photomask and forms a grid by single imaging and etching formation; and when nickel reacts with the polycrystalline silicon to form a silicide, a grid nickel silicide with flat morphology is finally formed. Through the device structure conducive to eliminating U-shaped nickel silicide and the corresponding technology thereof disclosed by the invention, the grid nickel silicide with flat morphology is finally formed by a method of forming a grid locally grooved at the top of the polycrystalline silicon.
Description
Technical field
The present invention relates to a kind of technical field of manufacturing semiconductors, relate in particular to a kind of device that helps to eliminate U type nickel silicide.
Background technology
In existing nickel suicide structure, often adopt the technical process of side wall moulding.But (dry etching) very easily causes the grid top rake in the side wall molding process, and simultaneously, the oxide between grid and the side wall can form the cavity of certain depth in integration process.Fig. 1 is the nickel silicide of existing employing side wall molding process, sees also shown in Figure 1.In fact reacting when nickel and polysilicon when forming silicide, nickel is a side who moves, and therefore finally grid nickel silicide (NiSi) is easy to appear inverted U-shaped.
Summary of the invention
The present invention provides a kind of device architecture and corresponding technology thereof that helps to eliminate U type nickel silicide, solves existing U type nickel silicide effectively and causes the problem in top rake and cavity etc.
To achieve these goals, the technical scheme taked of the present invention is:
A kind of device architecture and corresponding technology thereof that helps to eliminate U type nickel silicide wherein, includes polysilicon; The differential trench open at the top of said polysilicon; This grooving processes adopts new light shield, adopts the graphical and etching shaping of single, to form grid; When nickel and said polysilicon react when forming silicide, finally be configured as the straight grid nickel silicide of pattern.
The above-mentioned device architecture and the corresponding technology thereof that help to eliminate U type nickel silicide, wherein, the first step is carried out thin film deposition on said polysilicon, and the spin coating photoresistance carries out photoetching then, adopts dry etching to open oxide again.
The above-mentioned device architecture and the corresponding technology thereof that help to eliminate U type nickel silicide, wherein, second step, remove photoresistance, carry out high-temperature oxydation then.
The above-mentioned device architecture and the corresponding technology thereof that help to eliminate U type nickel silicide, wherein, the 3rd step, carry out etching polysilicon gate, remove oxide layer then.
A kind of device architecture and corresponding technology thereof that helps to eliminate U type nickel silicide wherein, includes polysilicon; Cvd silicon oxide and silicon nitride film are as substrate successively, and the differential trench open at the top of said polysilicon, this grooving processes adopt polysilicon gate backlight cover; Cooperate thin film deposition; Adopt the autoregistration dry etching to form the top portions of gates fluting, graphical and twice dry etching of single is to form grid; When nickel and said polysilicon react when forming silicide, finally be configured as the straight grid nickel silicide of pattern.
The above-mentioned device architecture and the corresponding technology thereof that help to eliminate U type nickel silicide, wherein, the first step adopts the backlight cover to carry out graphical technology at said polysilicon and silica, at nitride silicon based the end.
The above-mentioned device architecture and the corresponding technology thereof that help to eliminate U type nickel silicide, wherein, second goes on foot, and carries out the deposition of silicon nitride.
The above-mentioned device architecture and the corresponding technology thereof that help to eliminate U type nickel silicide wherein, in the 3rd step, are carried out dry etching.
The above-mentioned device architecture and the corresponding technology thereof that help to eliminate U type nickel silicide wherein, in the 4th step, are carried out high-temperature oxydation
The above-mentioned device architecture and the corresponding technology thereof that help to eliminate U type nickel silicide, wherein, the 5th step, carry out etching polysilicon gate, remove oxide layer then.
The present invention is owing to adopted above-mentioned technology, and the good effect that makes it to have is:
Through the grid method of moulding top differential trench open on polysilicon, thereby finally form the straight grid nickel silicide of pattern.
Description of drawings
Fig. 1 is the nickel silicide of existing employing side wall molding process;
Fig. 2 is the sketch map of first kind of technological process first step of a kind of device architecture that helps to eliminate U type nickel silicide of the present invention;
Fig. 3 is the sketch map in second step of first kind of technological process of a kind of device architecture that helps to eliminate U type nickel silicide of the present invention;
Fig. 4 is the sketch map in the 3rd step of first kind of technological process of a kind of device architecture that helps to eliminate U type nickel silicide of the present invention;
Fig. 5 is the sketch map of second kind of technological process first step of a kind of device architecture that helps to eliminate U type nickel silicide of the present invention;
Fig. 6 is the sketch map in second step of second kind of technological process of a kind of device architecture that helps to eliminate U type nickel silicide of the present invention;
Fig. 7 is the sketch map in the 3rd step of second kind of technological process of a kind of device architecture that helps to eliminate U type nickel silicide of the present invention;
Fig. 8 is the sketch map in the 4th step of second kind of technological process of a kind of device architecture that helps to eliminate U type nickel silicide of the present invention;
Fig. 9 is the sketch map in the 5th step of second kind of technological process of a kind of device architecture that helps to eliminate U type nickel silicide of the present invention.
Embodiment
Provide below in conjunction with accompanying drawing that the present invention is a kind of to help to eliminate the device architecture of U type nickel silicide and the embodiment of corresponding technology thereof.
First method of the present invention:
Fig. 2 helps to eliminate the sketch map of first kind of technological process first step of the device architecture of U type nickel silicide for the present invention is a kind of; Fig. 3 helps to eliminate the sketch map in second step of first kind of technological process of the device architecture of U type nickel silicide for the present invention is a kind of; Fig. 4 helps to eliminate the sketch map in the 3rd step of first kind of technological process of the device architecture of U type nickel silicide for the present invention is a kind of, see also Fig. 2 to shown in Figure 4.A kind of device architecture and corresponding technology thereof that helps to eliminate U type nickel silicide of the present invention; Include polysilicon 4, slot in the part, top of polysilicon 4, and the new light shield of process using that should slot; Adopt the graphical and etching shaping of single, to form grid effectively.When nickel and polysilicon 4 react when forming silicide, make it finally be configured as the straight grid nickel silicide of pattern.
The present invention also has following execution mode on above-mentioned basis:
Please continue referring to Fig. 2 to shown in Figure 4.The first step is carried out thin film deposition on polysilicon 4, the spin coating photoresistance adopts dry etching to open silicon oxide layer more then.Promptly realize as shown in Figure 2 on polysilicon 4, have respectively oxide 5 and PR layer 6 through flim stack deposition+PR patterning+dry etching (oxide open).Second step, the photoresist layer on the polysilicon 46 is removed, carry out high temperature oxidation process then.Promptly through PR remove+oxidation realizing polysilicon as shown in Figure 34, and photoresist layer 6 removed.The 3rd step, on polysilicon 4, carry out etching polysilicon gate, remove oxide 5 then.Promptly through normal poly etching+oxide strip to realize polysilicon as shown in Figure 44.Through the grid of moulding top differential trench open at first, finally form the straight grid nickel silicide of pattern.
Second method of the present invention:
Fig. 5 helps to eliminate the sketch map of second kind of technological process first step of the device architecture of U type nickel silicide for the present invention is a kind of; Fig. 6 helps to eliminate the sketch map in second step of second kind of technological process of the device architecture of U type nickel silicide for the present invention is a kind of; Fig. 7 helps to eliminate the sketch map in the 3rd step of second kind of technological process of the device architecture of U type nickel silicide for the present invention is a kind of; Fig. 8 helps to eliminate the sketch map in the 4th step of second kind of technological process of the device architecture of U type nickel silicide for the present invention is a kind of; Fig. 9 helps to eliminate the sketch map in the 5th step of second kind of technological process of the device architecture of U type nickel silicide for the present invention is a kind of, see also Fig. 5 to shown in Figure 9.A kind of device architecture and corresponding technology thereof that helps to eliminate U type nickel silicide of the present invention; Include polysilicon 4; Cvd silicon oxide 5 and silicon nitride 7 films are slotted in the part, top of polysilicon 4 as substrate successively, and the process using polysilicon gate backlight cover that should slot; And the cooperation thin film deposition, adopt the autoregistration dry etching to form the top portions of gates fluting.When nickel and polysilicon 4 react when forming silicide, make it finally be configured as the straight grid nickel silicide of pattern.
The present invention also has following execution mode on above-mentioned basis:
Please continue referring to Fig. 5 to shown in Figure 9.The first step adopts grid backlight cover to carry out graphical technology on polysilicon 4 and laminated construction thereof silicon nitride is opened.Promptly realize having gate oxide 3 respectively on the monocrystalline silicon piece 2 as shown in Figure 5, polysilicon 4, silica 5 and silicon nitride 7 through reverse poly mask patterning+SiN opening.Second step, the silicon nitride on the polysilicon 47 is carried out the deposition of thin layer silicon nitride, form the thin layer silicon nitride sedimentary deposit 8 on the silicon nitride 7 as shown in Figure 6.The 3rd step, polysilicon 4 is carried out further dry etching, eliminate silicon nitride 7, as shown in Figure 7.The 4th step, polysilicon 4 is carried out high-temperature oxydation, make it have oxide at polysilicon layer 4, as shown in Figure 8.The 5th step, on polysilicon 4, carry out grid etch, remove oxide 5 then.Promptly through normal poly etching+oxide strip to realize polysilicon as shown in Figure 44.Through the grid of moulding top differential trench open at first, finally form the straight grid nickel silicide of pattern.
In sum, adopt a kind of device architecture and corresponding technology thereof that helps to eliminate U type nickel silicide of the present invention,, thereby finally form the straight grid nickel silicide of pattern through the grid method of moulding top differential trench open on polysilicon.
More than specific embodiment of the present invention is described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, method of wherein not describing in detail to the greatest extent and processing procedure are construed as with the common mode in this area to be implemented; Those skilled in the art can make various distortion or modification within the scope of the claims, and this does not influence flesh and blood of the present invention.All any modifications of within spirit of the present invention and principle, being done, be equal to replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. device architecture and a corresponding technology thereof that helps to eliminate U type nickel silicide is characterized in that, includes polysilicon; The differential trench open at the top of said polysilicon; This grooving processes adopts new light shield, adopts the graphical and etching shaping of single, to form grid; When nickel and said polysilicon react when forming silicide, finally be configured as the straight grid nickel silicide of pattern.
2. according to said device architecture and the corresponding technology thereof that helps to eliminate U type nickel silicide of claim 1, it is characterized in that the first step is carried out thin film deposition on said polysilicon, the spin coating photoresistance carries out photoetching then, adopts dry etching to open oxide again.
3. according to said device architecture and the corresponding technology thereof that helps to eliminate U type nickel silicide of claim 2, it is characterized in that, second step, remove photoresistance, carry out high-temperature oxydation then.
4. according to said device architecture and the corresponding technology thereof that helps to eliminate U type nickel silicide of claim 3, it is characterized in that, the 3rd step, carry out etching polysilicon gate, remove oxide layer then.
5. device architecture and a corresponding technology thereof that helps to eliminate U type nickel silicide is characterized in that, includes polysilicon; Cvd silicon oxide and silicon nitride film are as substrate successively, and the differential trench open at the top of said polysilicon, this grooving processes adopt polysilicon gate backlight cover; Cooperate thin film deposition; Adopt the autoregistration dry etching to form the top portions of gates fluting, graphical and twice dry etching of single is to form grid; When nickel and said polysilicon react when forming silicide, finally be configured as the straight grid nickel silicide of pattern.
6. according to said device architecture and the corresponding technology thereof that helps to eliminate U type nickel silicide of claim 5, it is characterized in that the first step adopts the backlight cover to carry out graphical technology at said polysilicon and silica, at nitride silicon based the end.
7. according to said device architecture and the corresponding technology thereof that helps to eliminate U type nickel silicide of claim 6, it is characterized in that second goes on foot, and carries out the deposition of silicon nitride.
8. according to said device architecture and the corresponding technology thereof that helps to eliminate U type nickel silicide of claim 7, it is characterized in that, in the 3rd step, carry out dry etching.
9. said according to Claim 8 device architecture and the corresponding technology thereof that helps to eliminate U type nickel silicide is characterized in that, in the 4th step, carries out high-temperature oxydation.
10. according to said device architecture and the corresponding technology thereof that helps to eliminate U type nickel silicide of claim 9, it is characterized in that, the 5th step, carry out etching polysilicon gate, remove oxide layer then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110356287.8A CN102569052B (en) | 2011-11-11 | 2011-11-11 | Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110356287.8A CN102569052B (en) | 2011-11-11 | 2011-11-11 | Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof |
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| CN102569052A true CN102569052A (en) | 2012-07-11 |
| CN102569052B CN102569052B (en) | 2015-06-17 |
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| CN201110356287.8A Active CN102569052B (en) | 2011-11-11 | 2011-11-11 | Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319881A (en) * | 2000-03-09 | 2001-10-31 | 三星电子株式会社 | Method for forming self-aligning contact welding disc in metal inlay grid technology |
| CN102437186A (en) * | 2011-08-04 | 2012-05-02 | 上海华力微电子有限公司 | Device structure beneficial to elimination of inverted U-shaped nickel silicide and preparation process thereof |
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- 2011-11-11 CN CN201110356287.8A patent/CN102569052B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319881A (en) * | 2000-03-09 | 2001-10-31 | 三星电子株式会社 | Method for forming self-aligning contact welding disc in metal inlay grid technology |
| CN102437186A (en) * | 2011-08-04 | 2012-05-02 | 上海华力微电子有限公司 | Device structure beneficial to elimination of inverted U-shaped nickel silicide and preparation process thereof |
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| CN102569052B (en) | 2015-06-17 |
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