CN102479909B - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
- Publication number
- CN102479909B CN102479909B CN201010558248.1A CN201010558248A CN102479909B CN 102479909 B CN102479909 B CN 102479909B CN 201010558248 A CN201010558248 A CN 201010558248A CN 102479909 B CN102479909 B CN 102479909B
- Authority
- CN
- China
- Prior art keywords
- light
- base
- protective film
- emitting diode
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001681 protective effect Effects 0.000 claims abstract description 35
- 239000002245 particle Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 9
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 239000010445 mica Substances 0.000 claims description 2
- 229910052618 mica group Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims 2
- 238000004383 yellowing Methods 0.000 abstract description 5
- 239000000919 ceramic Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- -1 polypropylene adipate Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
一种发光二极管,包括基座、安装基座上的第一引脚及第二引脚及与第一引脚及第二引脚电连接的发光芯片,所述基座包括基底及形成于该基底上的环状反射杯,所述发光芯片设置于基底的表面上,所述反射杯的内侧壁面围绕发光芯片设置,所述反射杯的内侧壁面上覆盖有保护膜。该发光二极管由于采用了保护膜对基座的反射杯进行保护,使得反射杯可以不受发光芯片照射影响,因此可防止光线对反射杯照射所带来的黄化及脆裂等问题。
A light-emitting diode, including a base, a first pin and a second pin on the mounting base, and a light-emitting chip electrically connected to the first pin and the second pin, the base includes a base and is formed on the base An annular reflective cup on the base, the light-emitting chip is arranged on the surface of the base, the inner wall of the reflective cup surrounds the light-emitting chip, and the inner wall of the reflective cup is covered with a protective film. Since the light-emitting diode adopts a protective film to protect the reflective cup of the base, the reflective cup is not affected by the light-emitting chip, so problems such as yellowing and embrittlement caused by light irradiation on the reflective cup can be prevented.
Description
技术领域 technical field
本发明涉及一种半导体元件,特别是指一种发光二极管。The invention relates to a semiconductor element, in particular to a light emitting diode.
背景技术 Background technique
发光二极管凭借其高光效、低能耗、无污染等优点,已被应用于越来越多的场合之中,大有取代传统光源的趋势。Light-emitting diodes have been used in more and more occasions due to their advantages of high light efficiency, low energy consumption, and no pollution, and have a tendency to replace traditional light sources.
发光二极管是通过采用电流激发其发光芯片的方式进行发光。根据所选用的材料,发光二极管的芯片能够辐射出各种相应的可见光以及不可见光,范围涵盖紫外至红外波段。对于紫外发光芯片而言,其既可搭配RGB(红绿蓝)三色荧光粉使用来合成白光以进行照明,也可以单独使用来达到杀菌、净化、探测、固化等目的。Light-emitting diodes emit light by exciting their light-emitting chips with electric current. According to the selected materials, the chip of the light-emitting diode can radiate various corresponding visible and invisible light, covering the range from ultraviolet to infrared. For ultraviolet light-emitting chips, it can be used with RGB (red, green and blue) three-color phosphors to synthesize white light for lighting, and can also be used alone to achieve sterilization, purification, detection, curing and other purposes.
发光二极管基座通常是由合成高分子材料如PPA(聚己二酸丙二醇酯)或者PMMA(聚甲基丙烯酸甲酯)制成,这样制造成本低且易成型。然而,这些材质对于某些光线的耐性较低,在经过长时间照射之后容易发生黄化甚至于脆裂,造成发光二极管的使用寿命降低。The LED base is usually made of synthetic polymer materials such as PPA (polypropylene adipate) or PMMA (polymethyl methacrylate), which is low in manufacturing cost and easy to shape. However, these materials are less resistant to certain light, and are prone to yellowing or even brittle cracking after long-term exposure, resulting in a reduction in the service life of the LED.
发明内容 Contents of the invention
因此,有必要提供一种不易黄化及脆裂的发光二极管。Therefore, it is necessary to provide a light-emitting diode that is not prone to yellowing and brittleness.
一种发光二极管,包括基座、安装基座上的第一引脚及第二引脚及与第一引脚及第二引脚电连接的发光芯片,所述基座包括基底及形成于该基底上的环状反射杯,所述发光芯片设置于基底的表面上,所述反射杯的内侧壁面围绕发光芯片设置,所述反射杯的内侧壁面上覆盖有保护膜。A light-emitting diode, including a base, a first pin and a second pin on the mounting base, and a light-emitting chip electrically connected to the first pin and the second pin, the base includes a base and is formed on the base An annular reflective cup on the base, the light-emitting chip is arranged on the surface of the base, the inner wall of the reflective cup is arranged around the light-emitting chip, and the inner wall of the reflective cup is covered with a protective film.
该发光二极管由于采用了保护膜对基座的反射杯进行保护,使得反射杯可以不受发光芯片照射影响,因此可防止光线对反射杯照射所带来的黄化及脆裂的问题。Since the light-emitting diode adopts a protective film to protect the reflective cup of the base, the reflective cup can not be affected by the light-emitting chip, so the problems of yellowing and embrittlement caused by light irradiation on the reflective cup can be prevented.
下面参照附图,结合具体实施例对本发明作进一步的描述。The present invention will be further described below in conjunction with specific embodiments with reference to the accompanying drawings.
附图说明 Description of drawings
图1是本发明一实施例的发光二极管的剖面示意图。FIG. 1 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the present invention.
主要元件符号说明Description of main component symbols
具体实施方式 Detailed ways
请参阅图1,示出了本发明一实施例的发光二极管。该发光二极管包括基座10、分别固定于基座10相对两端的第一引脚20及第二引脚30、安装于第一引脚20上的发光芯片40、覆盖基座10内表面的保护膜50及覆盖发光芯片40的封装体60。Please refer to FIG. 1 , which shows a light emitting diode according to an embodiment of the present invention. The light-emitting diode includes a base 10, a first pin 20 and a second pin 30 respectively fixed on opposite ends of the base 10, a light-emitting chip 40 mounted on the first pin 20, and a protective cover covering the inner surface of the base 10. The film 50 and the package body 60 covering the light emitting chip 40 .
上述基座10包括基底11及形成基底11上的反射杯12。所述反射杯12呈环状,其中部形成一凹陷部(未标示)。所述第一引脚20及第二引脚30均由金属材料制成,并弯折成U型,分别穿置于基座10的基底11的相对两端。第一引脚20与第二引脚30相互隔开以避免短路。第一引脚20及第二引脚30均包括位于基底11底面的接触段24、34、位于基底11顶面且暴露于凹陷部内的接线段22、32及连接接触段24、34及接线段22、32的连接段26、36。该接触段24、34用于与外部的电路(图未示)连接以将电能输入进发光二极管内。该接线段22、32用于与发光芯片40电连接,以驱动发光芯片40发光。该接线段22、32平行于接触段24、34且垂直于连接段26、36。所述基座10可以由LCP(Liquid Crystal Polymer,即液晶高分子)材料一体制成,也可以为不同材料分开制造,比如所述基座10的反射杯12由LCP材料制成,而基底11为硅基板、塑料基板或陶瓷基板。另外,在制作中,所述LCP材料中可以混入塑胶(Plastic)粒子、陶瓷(Ceramic)粒子或者高挥发性溶液。The base 10 includes a base 11 and a reflection cup 12 formed on the base 11 . The reflecting cup 12 is annular, and a recess (not shown) is formed in the middle thereof. Both the first pin 20 and the second pin 30 are made of metal material, bent into a U-shape, and respectively passed through opposite ends of the base 11 of the base 10 . The first pin 20 and the second pin 30 are separated from each other to avoid short circuit. Both the first pin 20 and the second pin 30 include contact sections 24, 34 located on the bottom surface of the base 11, wiring sections 22, 32 located on the top surface of the base 11 and exposed in the recess, and connecting contact sections 24, 34 and wiring sections. 22,32 connecting sections 26,36. The contact sections 24, 34 are used to connect with an external circuit (not shown) to input electric energy into the LED. The wiring segments 22 and 32 are used to electrically connect with the light emitting chip 40 to drive the light emitting chip 40 to emit light. The connection section 22 , 32 is parallel to the contact section 24 , 34 and perpendicular to the connection section 26 , 36 . The base 10 can be integrally made of LCP (Liquid Crystal Polymer, i.e. liquid crystal polymer) material, and can also be manufactured separately for different materials, such as the reflection cup 12 of the base 10 is made of LCP material, and the base 11 It is a silicon substrate, a plastic substrate or a ceramic substrate. In addition, during production, the LCP material may be mixed with plastic (Plastic) particles, ceramic (Ceramic) particles or a highly volatile solution.
上述发光芯片40容置于所述基座10的反射杯12内,并固定于第一引脚20的接线段22表面上,其是由氮化镓、氮化铟镓等半导体化合材料所制成。所述发光芯片40在通电之后可发射出各种可见光或者不可见光,如黄光、蓝光及紫外光等。该发光芯片40通过二金线42分别连接至第一引脚20及第二引脚30的接线段22、32以实现电性导通。当然,发光芯片40也可采用倒装(flip-chip)的方式直接固定于第一引脚20及第二引脚30的接线段22、32表面,而无需使用金线42。The above-mentioned light-emitting chip 40 is accommodated in the reflective cup 12 of the base 10, and fixed on the surface of the connection section 22 of the first pin 20, which is made of semiconductor compound materials such as gallium nitride and indium gallium nitride. become. The light emitting chip 40 can emit various visible light or invisible light after being powered on, such as yellow light, blue light and ultraviolet light. The light-emitting chip 40 is respectively connected to the connection sections 22 and 32 of the first pin 20 and the second pin 30 through two gold wires 42 to achieve electrical conduction. Of course, the light-emitting chip 40 can also be directly fixed on the surface of the connection segments 22 and 32 of the first pin 20 and the second pin 30 in a flip-chip manner, without using the gold wire 42 .
上述保护膜50包括覆盖于反射杯12的内侧壁面上的第一保护膜51,及贴设于基底11顶面上的第二保护膜52。所述第一保护膜51覆盖反射杯12的整个内侧壁面。所述第二保护膜52围绕所述发光芯片40设置,并由第一引脚20表面延伸至第二引脚30的表面以覆盖第一引脚20与第二引脚30之间暴露出的基底11顶面。该保护膜50是一种反射膜,其优选地由二氧化钛制成,也可以由二氧化硅、氮化硅等玻璃类或陶瓷类材料所制成。在本实施例中,所述保护膜50将直接暴露在发光芯片40照射范围内的基座10的表面均对应覆盖。在其他实施例中,可以理解地,根据具体情况需要,所述保护膜50可以仅包括覆盖于反射杯12的内侧壁面上的第一保护膜51,或者仅包括贴设于基底11顶面上的第二保护膜52。经由保护膜50的反射,发光芯片40朝向基座10发出的光线可被有效地被反射而最终射出,进而提升光利用率。并且,采用上述材料制成的保护膜50对于紫外波段的光线有着较高的反射率,因此可将发光芯片40发出光线中的紫外线有效地进行反射,从而保护位于反射膜50背面的基座10。特别地,当基座10采用上述LCP材料制造时,其对于紫外线的耐性较低,因此更需要保护膜50的保护作用。由于保护膜50的反射率较高(可达到99%以上),因此仅有非常少量的光透射过该保护膜50到达至基座10表面,从而确保基座10基本不会受光线影响而致黄化或者脆裂。另外,采用LCP材料制成的基座10的耐热性较好,可进一步延长基座10的使用寿命。The protective film 50 includes a first protective film 51 covering the inner wall surface of the reflection cup 12 , and a second protective film 52 attached on the top surface of the base 11 . The first protective film 51 covers the entire inner wall surface of the reflective cup 12 . The second protective film 52 is arranged around the light-emitting chip 40 and extends from the surface of the first pin 20 to the surface of the second pin 30 to cover the exposed between the first pin 20 and the second pin 30 base 11 top surface. The protective film 50 is a reflective film, which is preferably made of titanium dioxide, and can also be made of glass or ceramic materials such as silicon dioxide and silicon nitride. In this embodiment, the protective film 50 covers the surface of the base 10 that is directly exposed to the irradiation range of the light-emitting chip 40 correspondingly. In other embodiments, it can be understood that, according to specific circumstances, the protective film 50 may only include the first protective film 51 covering the inner side wall of the reflective cup 12, or only include the first protective film 51 attached to the top surface of the base 11. The second protective film 52. Through the reflection of the protective film 50 , the light emitted by the light-emitting chip 40 toward the base 10 can be effectively reflected and finally emitted, thereby improving light utilization efficiency. Moreover, the protective film 50 made of the above materials has a high reflectivity for ultraviolet light, so it can effectively reflect the ultraviolet rays in the light emitted by the light-emitting chip 40, thereby protecting the base 10 located on the back of the reflective film 50. . In particular, when the base 10 is made of the above-mentioned LCP material, its resistance to ultraviolet light is relatively low, so the protective effect of the protective film 50 is more needed. Due to the high reflectivity of the protective film 50 (up to 99%), only a very small amount of light is transmitted through the protective film 50 to reach the surface of the base 10, thereby ensuring that the base 10 is basically not affected by light. Yellowing or brittleness. In addition, the base 10 made of LCP material has better heat resistance, which can further prolong the service life of the base 10 .
上述封装体60填满反射杯12的凹陷部内以保护位于凹陷部内的发光芯片40。封装体60由聚碳酸酯或者聚甲基丙烯酸甲酯等透明材料所制成。封装体60内可以均匀地掺杂有荧光粉颗粒70。该荧光粉颗粒70可由钇铝石榴石、氮化物、氮氧化物、硅酸盐等荧光材料所制成,具体取决于实际的光色需求。The package body 60 fills the recessed portion of the reflective cup 12 to protect the light-emitting chip 40 located in the recessed portion. The package body 60 is made of transparent materials such as polycarbonate or polymethyl methacrylate. Phosphor particles 70 may be uniformly doped in the package body 60 . The phosphor particles 70 can be made of phosphor materials such as yttrium aluminum garnet, nitride, oxynitride, silicate, etc., depending on the actual light color requirement.
为进一步提升光利用率,使更多的光线能够照射到荧光粉颗粒70上,所述封装体60内还掺杂有反射颗粒80。所述反射颗粒80可由云母、二氧化钛、氧化锌等对于光线有较高反射率的材料制成,其粒径介于0.1μm~0.3μm之间。通过反射颗粒80的反射,可改变原本未经过荧光粉颗粒70的光线的光路,使其有一定几率照射到荧光粉颗粒70上。因此,发光二极管的出光效率相应地得到了提升。In order to further improve light utilization efficiency and allow more light to irradiate phosphor particles 70 , reflective particles 80 are also doped in the package body 60 . The reflective particles 80 can be made of mica, titanium dioxide, zinc oxide and other materials with high reflectivity to light, and the particle size is between 0.1 μm and 0.3 μm. Through the reflection of the reflective particles 80 , the optical path of the light that does not pass through the phosphor particles 70 can be changed so that it has a certain probability to irradiate the phosphor particles 70 . Therefore, the light extraction efficiency of the light emitting diode is correspondingly improved.
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010558248.1A CN102479909B (en) | 2010-11-24 | 2010-11-24 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010558248.1A CN102479909B (en) | 2010-11-24 | 2010-11-24 | Light emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102479909A CN102479909A (en) | 2012-05-30 |
CN102479909B true CN102479909B (en) | 2014-12-10 |
Family
ID=46092459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010558248.1A Expired - Fee Related CN102479909B (en) | 2010-11-24 | 2010-11-24 | Light emitting diode |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102479909B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102820409A (en) * | 2012-08-13 | 2012-12-12 | 深圳市灏天光电有限公司 | High-power LED (Light Emitting Diode) bracket and high-power LED packaging structure |
JP6237826B2 (en) * | 2015-09-30 | 2017-11-29 | 日亜化学工業株式会社 | Package, light emitting device, and manufacturing method thereof |
CN106449623A (en) * | 2016-11-07 | 2017-02-22 | 深圳市兴东芯科技有限公司 | An SMD light emitting diode |
CN109390327B (en) * | 2017-08-02 | 2020-10-30 | 吴裕朝 | Light-emitting device, backlight module applying same, light source module and preparation method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1549355A (en) * | 2003-05-08 | 2004-11-24 | 连营科技股份有限公司 | Light emitting diode and method for manufacturing the same |
CN2826702Y (en) * | 2005-04-05 | 2006-10-11 | 亿光电子工业股份有限公司 | Light-emitting diode packaging structure |
KR100665216B1 (en) * | 2005-07-04 | 2007-01-09 | 삼성전기주식회사 | Side-side light emitting diode with improved sidewall reflection structure |
US7967476B2 (en) * | 2007-07-04 | 2011-06-28 | Nichia Corporation | Light emitting device including protective glass film |
CN101459211B (en) * | 2007-12-11 | 2011-03-02 | 富士迈半导体精密工业(上海)有限公司 | Solid illuminating device |
-
2010
- 2010-11-24 CN CN201010558248.1A patent/CN102479909B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102479909A (en) | 2012-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108260361B (en) | light emitting device | |
TWI550915B (en) | Light-emitting device package and light-emitting system using same | |
KR102184381B1 (en) | Light emitting device having uv light diode and lighting apparatus including the same | |
US8039862B2 (en) | White light emitting diode package having enhanced white lighting efficiency and method of making the same | |
JP5788539B2 (en) | Light emitting element | |
CN103682068B (en) | Light-emitting device | |
CN107665940A (en) | Light-emitting device and its manufacture method | |
KR20170000087A (en) | Optical lens and light emitting module having thereof | |
JP6065408B2 (en) | Light emitting device and manufacturing method thereof | |
TW201347240A (en) | Illuminating device package | |
CN102479909B (en) | Light emitting diode | |
US8461609B2 (en) | Light emitting device package | |
KR20140004351A (en) | Light emitting diode package | |
CN104157769B (en) | Light-emitting diode packaging structure | |
CN108369978B (en) | light emitting device | |
CN102487116B (en) | Light emitting diode | |
KR20130014755A (en) | Light emitting device package and lighting system | |
KR101039979B1 (en) | Light emitting device package and lighting system | |
TWI409977B (en) | Light emitting diode | |
CN102456798B (en) | Light emitting diode | |
TW201218458A (en) | Light emitting diode | |
KR102409180B1 (en) | Light emitting device package and lighiting device | |
KR20120020600A (en) | Light emitting device package | |
KR20120013548A (en) | The light- | |
KR20150140039A (en) | Light emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141210 Termination date: 20151124 |