CN102449189A - 用来处理基质的装置和基质载体 - Google Patents
用来处理基质的装置和基质载体 Download PDFInfo
- Publication number
- CN102449189A CN102449189A CN2010800228431A CN201080022843A CN102449189A CN 102449189 A CN102449189 A CN 102449189A CN 2010800228431 A CN2010800228431 A CN 2010800228431A CN 201080022843 A CN201080022843 A CN 201080022843A CN 102449189 A CN102449189 A CN 102449189A
- Authority
- CN
- China
- Prior art keywords
- matrix
- substrate
- binder layer
- carrier
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Catalysts (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20095578A FI123170B (fi) | 2009-05-26 | 2009-05-26 | Järjestely substraatin käsittelemiseksi sekä asennusalusta substraattia varten |
FI20095578 | 2009-05-26 | ||
PCT/FI2010/050408 WO2010136644A1 (en) | 2009-05-26 | 2010-05-21 | Arrangement for processing substrate and substrate carrier |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102449189A true CN102449189A (zh) | 2012-05-09 |
CN102449189B CN102449189B (zh) | 2016-02-10 |
Family
ID=40680757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080022843.1A Active CN102449189B (zh) | 2009-05-26 | 2010-05-21 | 用来处理基质的装置和基质载体 |
Country Status (6)
Country | Link |
---|---|
US (3) | US20120055407A1 (zh) |
EP (1) | EP2435597B1 (zh) |
CN (1) | CN102449189B (zh) |
FI (1) | FI123170B (zh) |
TW (1) | TWI500808B (zh) |
WO (1) | WO2010136644A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI491755B (zh) * | 2011-12-13 | 2015-07-11 | 聯華電子股份有限公司 | 基材載具及其應用 |
WO2014191622A1 (en) * | 2013-05-29 | 2014-12-04 | Beneq Oy | Barrier, carrier arrangement and method for preventing material growth |
US9499908B2 (en) * | 2015-02-13 | 2016-11-22 | Eastman Kodak Company | Atomic layer deposition apparatus |
FI3733928T3 (fi) * | 2019-03-29 | 2023-04-03 | Picosun Oy | Näytteensuojus |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1110723A (zh) * | 1993-12-28 | 1995-10-25 | 佳能株式会社 | 形成淀积膜的方法和设备 |
CN1422979A (zh) * | 2001-12-03 | 2003-06-11 | 柯尼卡株式会社 | 透明导电膜、其形成方法与具有该透明导电膜的物品 |
US20070062455A1 (en) * | 2005-09-12 | 2007-03-22 | Saxler Adam W | Gas driven rotation apparatus and method for forming crystalline layers |
CN1957428A (zh) * | 2003-12-15 | 2007-05-02 | 美国超能公司 | 用于稀土-钡-铜-氧化物薄膜生长的高产量异位方法 |
US20080182101A1 (en) * | 2003-05-16 | 2008-07-31 | Peter Francis Carcia | Barrier films for plastic substrates fabricated by atomic layer deposition |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3602192A (en) * | 1969-05-19 | 1971-08-31 | Ibm | Semiconductor wafer processing |
US3814051A (en) * | 1972-11-29 | 1974-06-04 | L Lewison | Contact lens and apparatus for producing same |
US4610748A (en) * | 1984-12-10 | 1986-09-09 | Advanced Semiconductor Materials Of America, Inc. | Apparatus for processing semiconductor wafers or the like |
US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
US4949669A (en) * | 1988-12-20 | 1990-08-21 | Texas Instruments Incorporated | Gas flow systems in CCVD reactors |
US5122391A (en) * | 1991-03-13 | 1992-06-16 | Watkins-Johnson Company | Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD |
JP3081122B2 (ja) * | 1994-07-18 | 2000-08-28 | シャープ株式会社 | 基板搬送用治具及びそれを用いた液晶表示素子の製造方法 |
US5972152A (en) * | 1997-05-16 | 1999-10-26 | Micron Communications, Inc. | Methods of fixturing flexible circuit substrates and a processing carrier, processing a flexible circuit and processing a flexible circuit substrate relative to a processing carrier |
TW462946B (en) * | 2000-04-21 | 2001-11-11 | Ritdisplay Corp | Substrate transfer method of OLED process |
US6867539B1 (en) * | 2000-07-12 | 2005-03-15 | 3M Innovative Properties Company | Encapsulated organic electronic devices and method for making same |
US7041579B2 (en) * | 2003-10-22 | 2006-05-09 | Northrop Grumman Corporation | Hard substrate wafer sawing process |
US8304019B1 (en) * | 2004-02-19 | 2012-11-06 | Nanosolar Inc. | Roll-to-roll atomic layer deposition method and system |
US7976899B2 (en) * | 2006-10-23 | 2011-07-12 | General Electric Company | Methods for selective deposition of graded materials on continuously fed objects |
ES2336870B1 (es) * | 2007-08-20 | 2011-02-18 | Novogenio, S.L. | Sistema y procedimiento para el recubrimiento en vacio y en continuo de un material en forma de banda. |
KR101420285B1 (ko) * | 2008-01-09 | 2014-07-17 | 삼성전자주식회사 | 반도체 제조설비 그의 웨이퍼 로딩/언로딩 방법 |
-
2009
- 2009-05-26 FI FI20095578A patent/FI123170B/fi active IP Right Grant
-
2010
- 2010-05-21 CN CN201080022843.1A patent/CN102449189B/zh active Active
- 2010-05-21 EP EP10726140.6A patent/EP2435597B1/en active Active
- 2010-05-21 WO PCT/FI2010/050408 patent/WO2010136644A1/en active Application Filing
- 2010-05-21 US US13/318,919 patent/US20120055407A1/en not_active Abandoned
- 2010-05-25 TW TW099116633A patent/TWI500808B/zh active
-
2017
- 2017-06-05 US US15/613,532 patent/US20170268106A1/en not_active Abandoned
-
2019
- 2019-03-11 US US16/298,207 patent/US20190203356A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1110723A (zh) * | 1993-12-28 | 1995-10-25 | 佳能株式会社 | 形成淀积膜的方法和设备 |
CN1422979A (zh) * | 2001-12-03 | 2003-06-11 | 柯尼卡株式会社 | 透明导电膜、其形成方法与具有该透明导电膜的物品 |
US20080182101A1 (en) * | 2003-05-16 | 2008-07-31 | Peter Francis Carcia | Barrier films for plastic substrates fabricated by atomic layer deposition |
CN1957428A (zh) * | 2003-12-15 | 2007-05-02 | 美国超能公司 | 用于稀土-钡-铜-氧化物薄膜生长的高产量异位方法 |
US20070062455A1 (en) * | 2005-09-12 | 2007-03-22 | Saxler Adam W | Gas driven rotation apparatus and method for forming crystalline layers |
Also Published As
Publication number | Publication date |
---|---|
US20170268106A1 (en) | 2017-09-21 |
US20190203356A1 (en) | 2019-07-04 |
TWI500808B (zh) | 2015-09-21 |
CN102449189B (zh) | 2016-02-10 |
EP2435597A1 (en) | 2012-04-04 |
TW201109466A (en) | 2011-03-16 |
FI20095578A0 (fi) | 2009-05-26 |
FI123170B (fi) | 2012-11-30 |
EP2435597B1 (en) | 2018-10-17 |
WO2010136644A1 (en) | 2010-12-02 |
US20120055407A1 (en) | 2012-03-08 |
FI20095578L (fi) | 2010-11-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230516 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Patentee after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Finland Vantaa Patentee before: BENEQ OY |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Building 3, No.11 Mumashan Road, Qingdao Area, China (Shandong) Pilot Free Trade Zone, Qingdao City, Shandong Province, China 266000 Patentee after: Qingdao Sirui Intelligent Technology Co.,Ltd. Country or region after: China Address before: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao Pilot Free Trade Zone, Shandong Province (A) Patentee before: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Country or region before: China |