CN102403432B - Light emitting structure and manufacturing method thereof - Google Patents

Abstract

The invention discloses a light-emitting structure and a manufacturing method thereof. The light emitting structure comprises a semiconductor light emitting element, wherein the semiconductor light emitting element comprises a first contact and a second contact. The light emitting structure further comprises a first electrode electrically connected with the first contact and a second electrode electrically connected with the second contact, and the first electrode and the second electrode form a concave surface. Wherein the semiconductor light emitting element is located within the concave surface.

Description

Light emitting structure and manufacturing method thereof

technical field

The invention mainly relates to a light-emitting structure and a manufacturing method thereof, and the light-emitting structure includes a semiconductor light-emitting element and an electrode. The electrode forms a concave surface, which can reflect the light emitted by the semiconductor light emitting element, thereby improving the light extraction efficiency of the semiconductor light emitting element. Through the manufacturing method of the present invention, the process of encapsulation and wavelength conversion material coating can be completed more efficiently.

Background technique

The current common light-emitting structure process is to form a single die by cutting the light-emitting element such as a light-emitting diode after the epitaxial process is completed, and then place the die individually on a sub-carrier. This time the carrier can be a lead frame. (leadframe) or large-size inlaid base (mountingsubstrate) for wiring, soldering, phosphor coating and subsequent packaging processes. Since the above-mentioned process requires multiple steps to complete, it is not only time-consuming, but also greatly increases the production cost.

Contents of the invention

The invention provides a light-emitting structure, which includes a semiconductor light-emitting element, and the semiconductor light-emitting element includes a first contact and a second contact. The above-mentioned light emitting structure further includes that the first electrode is electrically connected to the first contact point and the second electrode is electrically connected to the second contact point, and the first electrode and the second electrode form a concave surface. Wherein the semiconductor light emitting element is located in the concave surface.

The present invention also discloses a method for manufacturing a light-emitting structure, the steps of which at least include: providing a carrier plate, providing a plurality of semiconductor light-emitting elements on the carrier plate; forming an adhesive layer with a curved surface on the side wall of the semiconductor light-emitting element; and forming a metal Layer on the glue layer. The metal layer forms corresponding curved surfaces on the adhesive layer, and further forms the first electrode and the second electrode. Removing the adhesive layer and the carrier board makes the concave surface formed by the first electrode and the second electrode reflect the light emitted by the semiconductor light emitting element.

Description of drawings

1A-1G show the manufacturing process of the embodiment of the present invention;

Fig. 2 is an embodiment of the present invention;

Fig. 3 is another embodiment of the present invention;

4A-4G show the manufacturing process of another embodiment of the present invention;

Explanation of reference signs

10: carrier board;

20: semiconductor light emitting element;

30: adhesive layer;

50: light-emitting structure;

60: wavelength conversion layer;

70: encapsulation layer;

200: first surface;

201: the first contact point;

202: the second contact;

204: walkway area;

400a: first electrode;

400b: second electrode;

402: Groove;

405: concave surface;

detailed description

The invention discloses a light emitting structure and a manufacturing method thereof. 1A to 1G are structural schematic diagrams of a manufacturing process according to an embodiment of the present invention. As shown in FIG. 1A , a carrier board 10 is provided, on which there are a plurality of semiconductor light emitting elements 20 . There is a walkway area 204 between the semiconductor light emitting elements 20 . The plurality of semiconductor light emitting elements 20 can emit light with the same or different wavelengths, and the light emitting range can be from ultraviolet light to infrared light. The semiconductor light emitting device 20 can be a light emitting diode and includes a first surface 200 , wherein the first surface 200 includes at least a first contact 201 and a second contact 202 for passing current into the semiconductor light emitting device 20 to make it emit light. The carrier plate 10 can be a growth substrate of the semiconductor light emitting element 20, such as sapphire (Sapphire), silicon carbide (SiC), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN) or gallium arsenide (GaAs ), etc., a plurality of semiconductor light emitting elements 20 can be formed on the carrier 10 through known semiconductor growth techniques.

Next, as shown in FIG. 1B , an adhesive layer 30 is formed on the aisle area 204 . The adhesive layer 30 is mainly formed on the sidewall of the semiconductor light emitting device 20 and forms the surface 301 . Wherein the above-mentioned adhesive layer 30 can be formed by means of spin coating, printing or casting glue, and the material of the adhesive layer 30 can be an elastic material, such as silicone rubber (siliconerubber), silicone resin (siliconeresin), silica gel, elastic polyurethane ( PU), porous polyurethane (PU), acrylic rubber (acrylicrubber) or die cutting glue, such as blue film or ultraviolet (UV) glue. During the formation of the adhesive layer 30, the first contact 201 and the second contact 202 of the semiconductor light emitting element 20 may be partially covered. At this time, as shown in FIG. Part of the adhesive layer 30 is removed, exposing the first contact 201 and the second contact 202 of the semiconductor light emitting device 20 .

Subsequently, as shown in FIG. 1D , a metal layer 40 is formed on the adhesive layer 30 and the semiconductor light emitting element 20 . The metal layer 40 can be formed by means of electroplating, vapor deposition or sputtering, and the material of the metal layer 40 can be selected from copper (Cu), aluminum (Al), gold (Au), silver (Ag) or alloys thereof, etc. Conductive and highly reflective material. Since the metal layer 40 is formed to follow the shape of the composition below it, the metal layer 40 on the adhesive layer 30 will form a corresponding surface 401 along the surface 301 of the adhesive layer 30, and is compatible with the first surface of the semiconductor light emitting element 20. The contact 201 is in contact with the second contact 202 . Wherein the corresponding surface 401 may be a curved surface, an inclined surface, or a combination of a partially curved surface and a partially inclined surface.

Next, as shown in FIG. 1E , the metal layer 40 can be patterned by photolithography and etching techniques to form a plurality of grooves 402, wherein the grooves 402 above the semiconductor light emitting element 20 can divide the metal layer above the semiconductor light emitting element 20 40 is divided into a first electrode 400a and a second electrode 400b. The first electrode 400 a is electrically connected to the first contact 201 , and the second electrode 400 b is electrically connected to the second contact 202 . The trench 402 above the aisle area 204 can electrically isolate two adjacent semiconductor light emitting elements 20 .

Subsequently, as shown in FIG. 1F , the carrier 10 can be removed by means of laser lift-off, etching, etc., and finally the adhesive layer 30 is removed as shown in FIG. 1G , so that the corresponding surfaces 401 of the first electrode 400 a and the second electrode 400 b are A plurality of light emitting structures 50 are exposed and completed. It should be mentioned here that the first electrode 400a and the second electrode 400b included in the light emitting structure 50 have a conductive function, so they can be electrically connected to the first electrode 400a through the first contact 201 and the second electrode 400b. The electrically connected second contact 202 introduces external current into the semiconductor light emitting element 20 to make it emit light. Therefore, it is no longer necessary to connect wires to the first contact 201 and the second contact 202 of the light-emitting element in a manner such as yellow light wire bonding or wire bonding. And because the corresponding surfaces 401 of the first electrode 400a and the second electrode 400b form a concave surface 405, and this concave surface 405 is a metal surface with a reflective function, so when the semiconductor light emitting element 20 located in the concave surface 405 is formed from one side of the semiconductor light emitting element 20 When the side light-emitting surface 206 emits the light 15 (indicated by a dotted line), the corresponding surface 401 will reflect the light 15 to increase the overall light-emitting efficiency of the semiconductor light emitting device 20 .

Next, the semiconductor light emitting element 20 can be further coated with the wavelength conversion layer 60 , as shown in FIG. 2 . The above-mentioned wavelength conversion layer 60 can be made by spin coating, deposition, glue dispensing, doctor blade or casting glue. The wavelength conversion layer 60 comprises at least one material selected from blue phosphor, yellow phosphor, green phosphor, red phosphor, zinc selenide, cadmium zinc selenide, group III phosphide, group III arsenide, and III A group of materials composed of group nitrides. The blue phosphor refers to the phosphor that can convert the light incident on the phosphor into blue light; other phosphors such as yellow phosphor, green phosphor, and red phosphor also have similar meanings. Each phosphor material and its composition belong to the known technology in this field, and will not be repeated here. The wavelength conversion layer 60 can convert all or part of the first wavelength emitted by the semiconductor light emitting element 20 into the second wavelength. After the coating of the wavelength conversion layer 60 is completed, the encapsulation layer 70 may also be formed on the light emitting structure 50 in a manner such as dispensing glue. The encapsulation layer 70 can be designed to have a lens effect structure to increase light extraction efficiency.

FIG. 3 shows another embodiment of the present invention, mainly placing the packaged light-emitting structure 50 shown in FIG. 2 on a sub-carrier 80. This time the carrier 80 can be a printed circuit board or a viaplug. carrier board. The control signal is introduced into the light-emitting structure 50 through the sub-carrier 80 with the designed circuit. The light emitting structure 50 can be welded on the carrier 80 by high frequency welding process.

4A to 4G are schematic diagrams of a manufacturing process according to another embodiment of the present invention. As shown in FIG. 4A , a carrier 10 is provided, and an adhesive connection layer 12 on the upper and lower surfaces may be formed by spin coating, evaporation or printing to fix a plurality of semiconductor light emitting elements 20 on the carrier 10 . There are a plurality of aisle areas 204 between the plurality of semiconductor light emitting elements 20 . The plurality of semiconductor photoelectric elements 20 can emit light with the same or different wavelengths, and the light emission range can be from ultraviolet light to infrared light. The semiconductor light emitting element 20 can be a light emitting diode, which at least includes a first contact 201 and a second contact 202 to transmit current to the semiconductor light emitting element 20 to make it emit light. The carrier 10 can be a temporary substrate, and the plurality of semiconductor light emitting elements 20 can be fabricated elsewhere before being transferred to the carrier 10 . The material of the carrier 10 can be selected from silicone, glass, quartz, ceramic or alloy.

Next, as shown in FIG. 4B , an adhesive layer 30 is formed on the aisle area 204 . The adhesive layer 30 is mainly formed on the sidewall of the semiconductor light emitting device 20 and forms the surface 301 . Wherein the above-mentioned adhesive layer 30 can be formed by means of spin coating, printing or casting glue, and the material of the adhesive layer 30 can be an elastic material, such as silicone rubber (siliconerubber), silicone resin (siliconeresin), silica gel, elastic PU, Porous PU, acrylic rubber (acrylicrubber) or die cutting glue, such as blue film or UV glue. During the formation of the adhesive layer 30, the first contact 201 and the second contact 202 of the semiconductor light emitting element 20 may be partially covered. At this time, as shown in FIG. Part of the adhesive layer 30 is removed, exposing the first contact 201 and the second contact 202 of the semiconductor light emitting device 20 .

Subsequently, as shown in FIG. 4D , a metal layer 40 is formed on the adhesive layer 30 and the semiconductor light emitting element 20 . The metal layer 40 can be formed by means of electroplating, vapor deposition or sputtering, and the material of the metal layer 40 can be selected from copper (Cu), aluminum (Al), gold (Au), silver (Ag) or alloys thereof, etc. Conductive and highly reflective material. Since the metal layer 40 follows the shape of the underlying components when formed, the metal layer 40 on the adhesive layer 30 forms a corresponding surface 401 along the surface 301 of the adhesive layer 30 . The metal layer 40 is in contact with the first contact 201 and the second contact 202 of the semiconductor light emitting element 20 . Wherein the corresponding surface 401 may be a curved surface, an inclined surface, or a combination of a partially curved surface and a partially inclined surface.

Next, as shown in FIG. 4E , the metal layer 40 can be patterned with photolithography and etching techniques to form a plurality of grooves 402, wherein the grooves 402 above the semiconductor light emitting element 20 can divide the metal layer above the semiconductor light emitting element 20 40 is divided into a first electrode 400a and a second electrode 400b. The first electrode 400 a is electrically connected to the first contact 201 , and likewise, the second electrode 400 b is electrically connected to the second contact 202 . The trench 402 above the aisle area 204 can electrically isolate two adjacent semiconductor light emitting elements 20 .

Subsequently, as shown in FIG. 4F , the carrier 10 and the connection layer 12 can be removed by means of laser lift-off, etching, etc., and finally the adhesive layer 30 is removed as shown in FIG. 4G , so that the first electrode 400a and the second electrode 400b The corresponding surfaces 401 of the exposed and completed multiple light emitting structures 50 . It should be mentioned here that the first electrode 400a and the second electrode 400b included in the light emitting structure 50 have a conductive function, so they can be electrically connected to the first electrode 400a through the first contact 201 and the second electrode 400b. The electrically connected second contact 202 introduces external current into the semiconductor light emitting element 20 to make it emit light. Therefore, it is no longer necessary to connect wires to the first contact 201 and the second contact 202 of the light-emitting element in a manner such as yellow light wire bonding or wire bonding. Furthermore, the corresponding surfaces 401 of the first electrode 400 a and the second electrode 400 b form a concave surface 405 , and the concave surface 405 is a metal surface with a reflective function. Therefore, when the semiconductor light emitting element 20 located in the concave surface 405 emits light 15 (shown by a dotted line) from one side of the light emitting surface 206 of the semiconductor light emitting element 20, the corresponding surface 401 will reflect the light 15 to increase the overall light output of the semiconductor light emitting element 20. efficiency.

The various embodiments listed in the present invention are only used to illustrate the present invention, and are not intended to limit the scope of the present invention. Any obvious modifications or changes made by anyone to the present invention will not depart from the spirit and scope of the present invention.

Claims (9)

1. A light-emitting structure, comprising: The semiconductor light emitting element includes a first surface and a second surface opposite to the first surface, wherein the first surface has a first contact and a second contact; the first electrode is electrically connected to the first contact; and the second electrode is electrically connected to the second contact, and the first electrode and the second electrode jointly form a concave surface; Wherein the semiconductor light emitting element is located in the concave surface, the second surface is located on the same level as the first electrode and the second electrode, and the first electrode and the second electrode are solid metal structures. 2. The light emitting structure according to claim 1, wherein the light emitting structure further comprises a groove to separate the first electrode and the second electrode, and the first electrode and the second electrode are connected to the first contact and The surface opposite to the surface of the second contact is a flat surface. 3. The light emitting structure as claimed in claim 1, wherein the light emitting structure further comprises a wavelength conversion layer to cover the semiconductor light emitting element. 4. The light emitting structure as claimed in claim 3, wherein the light emitting structure further comprises an encapsulation layer. 5. The light emitting structure according to claim 4, wherein the encapsulation layer has a lens effect for increasing the light extraction efficiency of the light emitting structure. 6. The light emitting structure according to claim 1, wherein the first electrode and the second electrode are jointly formed on a flat surface opposite to the concave surface, and the flat surface is used for direct bonding and electrical connection to a primary circuit having a circuit. carrier. 7. The light emitting structure as claimed in claim 6, wherein a solid metal structure is formed between the concave surface and the flat surface. 8. A method for manufacturing a light-emitting structure, comprising: Provide the carrier board; providing a plurality of semiconductor light emitting elements on the carrier; forming a glue layer on the sidewalls of the plurality of semiconductor light emitting elements, wherein the glue layer has a surface; forming a metal layer on the glue layer and the plurality of semiconductor light emitting elements, wherein the metal layer has a corresponding surface facing the glue layer; patterning the metal layer to form a plurality of electrodes corresponding to each of the plurality of semiconductor light emitting elements; removing the carrier plate; and The adhesive layer is removed to expose the corresponding surface, wherein the corresponding surface is a concave surface, and the plurality of semiconductor light emitting elements are located on the concave surface. 9. The manufacturing method of the light emitting structure according to claim 8, further forming a wavelength conversion layer and/or an encapsulation layer on the plurality of semiconductor light emitting elements.