CN102403432A - Light emitting structure and method for manufacturing the same - Google Patents
Light emitting structure and method for manufacturing the same Download PDFInfo
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- CN102403432A CN102403432A CN2010102829571A CN201010282957A CN102403432A CN 102403432 A CN102403432 A CN 102403432A CN 2010102829571 A CN2010102829571 A CN 2010102829571A CN 201010282957 A CN201010282957 A CN 201010282957A CN 102403432 A CN102403432 A CN 102403432A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
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Abstract
The invention discloses a light-emitting structure and a manufacturing method thereof. The light emitting structure comprises a semiconductor light emitting element, wherein the semiconductor light emitting element comprises a first contact and a second contact. The light emitting structure further comprises a first electrode electrically connected with the first contact and a second electrode electrically connected with the second contact, and the first electrode and the second electrode form a concave surface. Wherein the semiconductor light emitting element is located within the concave surface.
Description
Technical field
The present invention relates generally to ray structure and its manufacturing approach, and this ray structure comprises semiconductor light-emitting elements and electrode.Its electrode forms concave surface, can the light that semiconductor light-emitting elements sent be reflected, and then promotes the light extraction efficiency of semiconductor light-emitting elements.See through manufacturing approach of the present invention, the technology that can more efficient completion encapsulation be coated with material for transformation of wave length.
Background technology
At present common ray structure technology be with as the light-emitting component of light-emitting diode behind the completion epitaxy technique; The mode that sees through cutting forms single tube core; Then again tube core is placed in individually on time carrier; This time carrier can be that lead frame (lead frame) or large scale are inlayed substrate (mounting substrate), with go between, welding, fluorescent material cover and follow-up packaging technology.Because above-mentioned arts demand multiple tracks step is accomplished, and is not only consuming time, and significantly increases production cost.
Summary of the invention
The present invention provides a kind of ray structure, and it comprises semiconductor light-emitting elements, and this semiconductor light-emitting elements comprises first contact and second contact.Above-mentioned ray structure comprises that again first electrode electricity connects first contact and is connected second contact with second electrode electricity, and first electrode and second electrode formation concave surface.Wherein semiconductor light-emitting elements is positioned at concave surface.
The present invention discloses a kind of manufacturing approach of ray structure again, and its step comprises at least: support plate is provided, provides a plurality of semiconductor light-emitting elements on support plate; Forming the surface is the sidewall of the glue-line of curved surface in semiconductor light-emitting elements; With form metal level on glue-line.Metal level forms corresponding curved surface on glue-line, and further forms first electrode and second electrode.But remove the light that glue-line and support plate are penetrated win electrode and the formed concave surface reflective semiconductor of second electrode light-emitting component.
Description of drawings
Figure 1A-1G is shown as the manufacturing process of the embodiment of the invention;
Fig. 2 is the embodiment of the invention;
Fig. 3 is another embodiment of the present invention;
Fig. 4 A-4G is shown as the manufacturing process of further embodiment of this invention;
Description of reference numerals
10: support plate;
20: semiconductor light-emitting elements;
30: glue-line;
50: ray structure;
60: wavelength conversion layer;
70: encapsulated layer;
200: first surface;
201: the first contacts;
202: the second contacts;
204: the aisle district;
400a: first electrode;
400b: second electrode;
402: groove;
405: concave surface;
Embodiment
The present invention discloses a kind of ray structure and preparation method thereof.Figure 1A to Fig. 1 G is the structural representation according to embodiment of the invention manufacturing process.Shown in Figure 1A, support plate 10 is provided, a plurality of semiconductor light-emitting elements 20 are arranged on support plate 10.Aisle district 204 is arranged between the semiconductor light-emitting elements 20.Above-mentioned a plurality of semiconductor light-emitting elements 20 can send the light with identical or different wavelength, and its light emitting region can be from ultraviolet light to infrared ray.Semiconductor light-emitting elements 20 can be light-emitting diode, comprises first surface 200, and wherein first surface 200 comprises first contact 201 and second contact 202 at least and can electric current be reached in the semiconductor light-emitting elements 20 and make it luminous.Support plate 10 can be the growth substrate of semiconductor light-emitting elements 20; For example sapphire (Sapphire), carborundum (SiC), zinc oxide (ZnO), gallium nitride (GaN), aluminium nitride (AlN) or GaAs (GaAs) etc., a plurality of semiconductor light-emitting elements 20 can see through the known semiconductor growing technology and be formed on the support plate 10.
Then, shown in Figure 1B, form glue-line 30 in aisle district 204.This glue-line 30 mainly is formed at the sidewall of semiconductor light-emitting elements 20 and forms surface 301.Wherein above-mentioned glue-line 30 can utilize modes such as rotary coating, printing or mold encapsulating to form; And the material of glue-line 30 can be elastomeric material; For example be silicon rubber (silicone rubber), silicones (silicone resin), silica gel, elastic polyurethane (PU), cellular polyurethane (PU), acrylic rubber (acrylic rubber) or die separation glue, like blue film or ultraviolet (UV) glue.Possibly have first contact 201 and second contact 202 that part covers semiconductor light-emitting elements 20 in the process that glue-line 30 forms; At this moment; Can be with glossing (polishprocess) shown in Fig. 1 C; The part glue-line 30 that covers semiconductor light-emitting elements 20 is removed, expose first contact 201 and second contact 202 of semiconductor light-emitting elements 20.
Subsequently, shown in Fig. 1 D, form metal level 40 on glue-line 30 and semiconductor light-emitting elements 20.This metal level 40 can utilize modes such as plating, vapor deposition or sputter to form, and the material of metal level 40 can be selected from the material of tool conductivity such as copper (Cu), aluminium (Al), gold (Au), silver (Ag) or its alloy and high reflectance.Because metal level 40 is the shape of following its below constituent when forming, therefore, the metal level 40 on glue-line 30 can form respective face 401 along the surface 301 of glue-line 30, and contacts with second contact 202 with first contact 201 of semiconductor light-emitting elements 20.Wherein this respective face 401 can be the combination on curved surface, inclined-plane or part curved surface and part inclined-plane.
Then; Shown in Fig. 1 E; Can form a plurality of grooves 402 with etching technique patterned metal layer 40 by gold-tinted (photolithography), the groove 402 that wherein is positioned at semiconductor light-emitting elements 20 tops can be separated into the metal level 40 of semiconductor light-emitting elements 20 tops the first electrode 400a and the second electrode 400b.The first electrode 400a is electrically connected first contact, 201, the second electrode 400b and is electrically connected second contact 202.The groove 402 that is positioned at 204 tops, aisle district can be with 20 electrical isolation of two adjacent semiconductor light-emitting components.
Subsequently, shown in Fig. 1 F, can laser lift-off, mode such as etching removes support plate 10, shown in Fig. 1 G glue-line 30 removed for another example at last, the respective face 401 of win the electrode 400a and the second electrode 400b is exposed and accomplished a plurality of ray structures 50.What this will propose especially be; The first electrode 400a that this ray structure 50 is comprised and the second electrode 400b be owing to have a conducting function, therefore can import foreign current in the semiconductor light-emitting elements 20 and make it luminous via first contact 201 that is electrically connected with the first electrode 400a and second contact 202 that is electrically connected with the second electrode 400b.Therefore do not need again lead is received first contact 201 and second contact 202 of light-emitting component like the mode of gold-tinted lead joint, wire-bonded.Again because the respective face 401 of the first electrode 400a and the second electrode 400b forms concave surface 405; And this concave surface 405 is for having the metal surface of reflection function; Therefore when the semiconductor light-emitting elements that is positioned at this concave surface 405 20 when a side exiting surface 206 of semiconductor light-emitting elements 20 emits beam 15 (being represented by dotted lines), the whole light extraction efficiency that respective face 401 can reflect light 15 with increase semiconductor light-emitting elements 20.
Then, can further coat semiconductor light-emitting elements 20 with wavelength conversion layer 60, as shown in Figure 2.Modes such as wherein above-mentioned wavelength conversion layer 60 can rotary coating, deposition, some glue, scraper or casting film encapsulating are processed.Wavelength conversion layer 60 comprises at least a material and is selected from the material group that blue colour fluorescent powder, yellow fluorescent powder, green emitting phosphor, red fluorescence powder, zinc selenide, cadmium selenide zinc, III family phosphide, III family arsenide and III group-III nitride are formed.Described blue colour fluorescent powder is meant that the light that can will be incident to fluorescent material converts the fluorescent material of blue light into; Other such as yellow fluorescent powder, green emitting phosphor, and red fluorescence powder also have similar meaning.Each phosphor material powder and composition thereof belong to the known technology in this field, do not give unnecessary details at this.Wavelength conversion layer 60 can send all or part of second wavelength that converts into of first wavelength with 20 of semiconductor light-emitting elements.After accomplishing wavelength conversion layer 60 coatings, also can on ray structure 50, form encapsulated layer 70 like the mode of a glue.Encapsulated layer 70 can be designed with the structure of lens effect, to increase light extraction efficiency.
Fig. 3 shows another embodiment of the present invention, mainly is that the ray structure 50 with above-mentioned completion shown in Figure 2 encapsulation places on time carrier 80, this time carrier 80 can be printed circuit board (PCB) or have in connect the support plate of embolism (viaplug).Through this inferior carrier 80 control signal is imported ray structure 50 with design circuit.Ray structure 50 can be welded in it on carrier 80 like the high frequency welding procedure.
Fig. 4 A to Fig. 4 G is the sketch map of another embodiment of the present invention manufacturing process.Shown in Fig. 4 A, support plate 10 is provided, and can rotary coating, mode such as vapor deposition or printing form upper and lower surfaces tool stickiness articulamentum 12 so that a plurality of semiconductor light-emitting elements 20 are fixed on the support plate 10.Has a plurality of aisle district 204 between a plurality of semiconductor light-emitting elements 20.Above-mentioned a plurality of semiconductor optoelectronic element 20 can send the light with identical or different wavelength, and its light emitting region can be from ultraviolet light to infrared ray.Semiconductor light-emitting elements 20 can be light-emitting diode, comprises first contact 201 and second contact 202 at least and electric current is reached in the semiconductor light-emitting elements 20 makes it luminous.Support plate 10 can be temporary base, and a plurality of semiconductor light-emitting elements 20 can transfer on the support plate 10 earlier after the elsewhere completes.The material of above-mentioned support plate 10 can be selected from silicon rubber (silicone), glass, quartz, pottery or alloy.
Then, shown in Fig. 4 B, form glue-line 30 in aisle district 204.This glue-line 30 mainly is formed at the sidewall of semiconductor light-emitting elements 20 and forms surface 301.Wherein above-mentioned glue-line 30 can utilize modes such as rotary coating, printing or mold encapsulating to form; And the material of glue-line 30 can be elastomeric material; For example be silicon rubber (silicone rubber), silicones (silicone resin), silica gel, elasticity PU, porous PU, acrylic rubber (acrylic rubber) or die separation glue, like blue film or UV glue.Possibly have first contact 201 and second contact 202 that part covers semiconductor light-emitting elements 20 in the process that glue-line 30 forms; At this moment; Can be with glossing (polish process) shown in Fig. 4 C; The part glue-line 30 that covers semiconductor light-emitting elements 20 is removed, first contact 201 of semiconductor light-emitting elements 20 and second contact 202 are exposed.
Subsequently, shown in Fig. 4 D, form metal level 40 on glue-line 30 and semiconductor light-emitting elements 20.This metal level 40 can utilize modes such as plating, vapor deposition or sputter to form, and the material of metal level 40 can be selected from the material of tool conductivity such as copper (Cu), aluminium (Al), gold (Au), silver (Ag) or its alloy and high reflectance.Because metal level 40 is the shape of following its below constituent when forming, therefore, the metal level 40 on glue-line 30 can form respective face 401 along the surface 301 of glue-line 30.Metal level 40 contacts with second contact 202 with first contact 201 of semiconductor light-emitting elements 20.Wherein respective face 401 can be the combination on curved surface, inclined-plane or part curved surface and part inclined-plane.
Then; Shown in Fig. 4 E; Can form a plurality of grooves 402 with etching technique patterned metal layer 40 by gold-tinted (photolithography), the groove 402 that wherein is positioned at semiconductor light-emitting elements 20 tops can be separated into the metal level 40 of semiconductor light-emitting elements 20 tops the first electrode 400a and the second electrode 400b.The first electrode 400a is electrically connected first contact 201, and likewise, the second electrode 400b is electrically connected second contact 202.The groove 402 that is positioned at 204 tops, aisle district can be with 20 electrical isolation of two adjacent semiconductor light-emitting components.
Subsequently, shown in Fig. 4 F, can laser lift-off, mode such as etching removes support plate 10 and articulamentum 12, shown in Fig. 4 G glue-line 30 removed for another example at last, the respective face 401 of win the electrode 400a and the second electrode 400b is exposed and accomplished a plurality of ray structures 50.What this will propose especially be; Therefore the first electrode 400a that this ray structure 50 is comprised and the second electrode 400b can import semiconductor light-emitting elements 20 with foreign current via first contact 201 that is electrically connected with the first electrode 400a and second contact 202 that is electrically connected with the second electrode 400b and make it luminous owing to have conducting function.Therefore do not need again lead is received first contact 201 and second contact 202 of light-emitting component like the mode of gold-tinted lead joint, wire-bonded.Respective face 401 owing to the first electrode 400a and the second electrode 400b forms concave surfaces 405 again, and this concave surface 405 is for having the metal surface of reflection function.Therefore when the semiconductor light-emitting elements that is positioned at this concave surface 405 20 when a side exiting surface 206 of semiconductor light-emitting elements 20 emits beam 15 (being represented by dotted lines), the whole light extraction efficiency that respective face 401 can reflect light 15 with increase semiconductor light-emitting elements 20.
Cited each embodiment of the present invention in order to explanation the present invention, is not in order to limit scope of the present invention only.Anyone was to the present invention did any showing and be prone to the modification of knowing or change neither disengaging spirit of the present invention and scope.
Claims (10)
1. ray structure comprises:
Semiconductor light-emitting elements comprises first surface, and wherein this first surface has first contact and second contact;
First electrode electricity connects this first contact; And
Second electrode electricity connects this second contact, and this first electrode and this second electrode form concave surface;
Wherein this semiconductor light-emitting elements is positioned on this concave surface.
2. ray structure as claimed in claim 1, wherein this ray structure further comprises groove, to separate this first electrode and this second electrode.
3. ray structure as claimed in claim 1, wherein this ray structure further comprises wavelength conversion layer, to coat this semiconductor light-emitting elements.
4. ray structure as claimed in claim 3, wherein this ray structure further comprises encapsulated layer.
5. ray structure as claimed in claim 4, wherein this encapsulated layer has lens effect, is used to increase the light extraction efficiency of this ray structure.
6. ray structure comprises:
Support plate;
A plurality of semiconductor light-emitting elements are positioned on this support plate, and wherein this semiconductor light-emitting elements comprises first surface, and this first surface has first contact and second contact;
First electrode electricity connects this first contact; And
Second electrode electricity connects this second contact, and this first electrode and this second electrode form concave surface; Wherein this semiconductor light-emitting elements is positioned on this concave surface.
7. ray structure as claimed in claim 6, wherein this support plate is the growth substrate or the temporary base of these a plurality of semiconductor light-emitting elements.
8. the manufacturing approach of a ray structure comprises:
Support plate is provided;
Provide a plurality of semiconductor light-emitting elements on this support plate;
Form glue-line in the sidewall of these a plurality of semiconductor light-emitting elements, wherein this glue-line has the surface;
Form metal level on this glue-line and these a plurality of semiconductor light-emitting elements, wherein this metal level has respective face this surface towards this glue-line;
This metal level of patterning is to form respectively these a plurality of semiconductor light-emitting elements of a plurality of electrode pairs; And remove this support plate.
9. the manufacturing approach of ray structure as claimed in claim 8 further comprises and removes this glue-line to expose this respective face, and wherein this respective face is a concave surface, and these a plurality of semiconductor light-emitting elements are positioned on this concave surface.
10. the manufacturing approach of ray structure as claimed in claim 9 further forms wavelength conversion layer and/or encapsulated layer on these a plurality of semiconductor light-emitting elements.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010282957.1A CN102403432B (en) | 2010-09-15 | 2010-09-15 | Light emitting structure and manufacturing method thereof |
| CN201610239991.8A CN105762251B (en) | 2010-09-15 | 2010-09-15 | Light emitting structure and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010282957.1A CN102403432B (en) | 2010-09-15 | 2010-09-15 | Light emitting structure and manufacturing method thereof |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610239991.8A Division CN105762251B (en) | 2010-09-15 | 2010-09-15 | Light emitting structure and method for manufacturing the same |
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| Publication Number | Publication Date |
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| CN102403432A true CN102403432A (en) | 2012-04-04 |
| CN102403432B CN102403432B (en) | 2016-05-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010282957.1A Active CN102403432B (en) | 2010-09-15 | 2010-09-15 | Light emitting structure and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022945A (en) * | 2016-11-01 | 2018-05-11 | 群创光电股份有限公司 | Display device and forming method thereof |
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| CN1424774A (en) * | 2001-11-22 | 2003-06-18 | 株式会社西铁城电子 | LED devices |
| CN1564331A (en) * | 2004-04-05 | 2005-01-12 | 清华大学 | Method of mfg. GaN-base LED |
| US20050116324A1 (en) * | 2003-11-28 | 2005-06-02 | Tadashi Yamaguchi | Semiconductor device and manufacturing method thereof |
| CN1825637A (en) * | 2005-02-25 | 2006-08-30 | Lg电子有限公司 | Light source apparatus and mfg. method thereof |
| CN101103499A (en) * | 2005-01-11 | 2008-01-09 | 美商旭明国际股份有限公司 | System and method for manufacturing light emitting diode array |
| CN101814487A (en) * | 2010-02-09 | 2010-08-25 | 中山大学 | Multi-chip LED light source module group and manufacture method thereof |
-
2010
- 2010-09-15 CN CN201010282957.1A patent/CN102403432B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1424774A (en) * | 2001-11-22 | 2003-06-18 | 株式会社西铁城电子 | LED devices |
| US20050116324A1 (en) * | 2003-11-28 | 2005-06-02 | Tadashi Yamaguchi | Semiconductor device and manufacturing method thereof |
| CN1564331A (en) * | 2004-04-05 | 2005-01-12 | 清华大学 | Method of mfg. GaN-base LED |
| CN101103499A (en) * | 2005-01-11 | 2008-01-09 | 美商旭明国际股份有限公司 | System and method for manufacturing light emitting diode array |
| CN1825637A (en) * | 2005-02-25 | 2006-08-30 | Lg电子有限公司 | Light source apparatus and mfg. method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108022945A (en) * | 2016-11-01 | 2018-05-11 | 群创光电股份有限公司 | Display device and forming method thereof |
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