CN102383085A - Method of preparing NiO buffer layer of double-sided texture coated conductor by oxidation epitaxy - Google Patents
Method of preparing NiO buffer layer of double-sided texture coated conductor by oxidation epitaxy Download PDFInfo
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Abstract
本发明公开了一种自氧化外延制备双面织构涂层导体NiO缓冲层的方法,包括以下步骤:a、基带的表面腐蚀修饰:将退火处理后双轴织构NiW合金(200)基带(宽为10mm),正反两面先后经过酒精,丙酮清洗后,在稀释后浓度为30%-50%的硝酸溶液中悬空浸渍40-120s,取出洗净,双面晾干。再将其在150体积的氨水和1-4体积的双氧水配置的混合修饰液中悬空浸渍20-60s,取出,洗净,双面晾干;b、氧化热处理:将a步表面腐蚀修饰后的NiW合金(200)基带(宽为10mm)悬空放入内径大于10mm,小于13mm的陶瓷管中,再将陶瓷管推入管式气氛烧结炉中在氩气气氛中740-800℃温度条件下,氧化热处理20-50分钟,取出即得。该方法制作成本低,工艺简单,易制得品质良好的双面NiO(200)缓冲层薄膜,并且厚度容易控制,能有效地发挥涂层导体缓冲层的作用。此外,本悬空放置于陶瓷管的方法也适合制备其它涂层导体的双面缓冲层或超导层。
The invention discloses a method for preparing a NiO buffer layer of a double-sided texture coating conductor by self-oxidation epitaxy, which comprises the following steps: a. Surface corrosion modification of the base band: biaxially textured NiW alloy (200) base band after annealing treatment ( Width is 10mm), the front and back sides have been washed with alcohol and acetone successively, suspended and dipped in a diluted nitric acid solution with a concentration of 30%-50% for 40-120s, taken out and cleaned, and dried on both sides. Then it is suspended and dipped in the mixed modification solution prepared by 150 volumes of ammonia water and 1-4 volumes of hydrogen peroxide for 20-60s, taken out, washed, and dried on both sides; b. Oxidation heat treatment: the surface corrosion modified in step a The NiW alloy (200) base tape (10mm wide) is placed in the air into a ceramic tube with an inner diameter greater than 10mm and less than 13mm, and then the ceramic tube is pushed into a tubular atmosphere sintering furnace at a temperature of 740-800°C in an argon atmosphere. Oxidation heat treatment for 20-50 minutes, take it out and get it. The method has low production cost and simple process, and is easy to prepare a double-sided NiO(200) buffer layer film with good quality, and the thickness is easy to control, and can effectively play the role of the coating conductor buffer layer. In addition, the method of placing the ceramic tube suspended in the air is also suitable for preparing double-sided buffer layers or superconducting layers of other coated conductors.
Description
技术领域 technical field
本发明属于高温超导材料制备技术领域,尤其涉及高温超导涂层导体缓冲层薄膜的制备技术。The invention belongs to the technical field of high-temperature superconducting material preparation, and in particular relates to the preparation technology of a high-temperature superconducting coating conductor buffer layer film.
背景技术 Background technique
第二代高温超导带材即稀土钡铜氧REBCO涂层导体,具有较第一代BSCCO系超导带材更高的临界电流密度以及磁场中更好的超导性能,在超导电缆、超导电机和超导变压器等方面将有着重大应用前景,各发达国家从本国电力能源的技术革新和长远利益,大力推进第二代高温超导体研究与实用化进程,国际间竞争愈来愈激烈。The second-generation high-temperature superconducting tape, that is, the REBCO coated conductor, has a higher critical current density and better superconducting performance in a magnetic field than the first-generation BSCCO-based superconducting tape. It is used in superconducting cables, Superconducting motors and superconducting transformers will have great application prospects. Developed countries are vigorously promoting the research and practical application of second-generation high-temperature superconductors based on their own technological innovation and long-term interests in electric energy. The international competition is becoming more and more fierce.
但是REBCO超导层在制备过程中对氧的依赖很严重,很容易氧化金属基底,同时金属离子也会向超导层扩散,这都将严重影响了REBCO的超导性能。因此,在金属衬底和REBCO之间必须增加一层缓冲层材料,既要充当金属衬底从到REBCO外延生长的中间模板,又要阻挡两种材料的相互扩散,这样才能保证制备出性能优良的REBCO高温超导涂层导体。因此,高温超导涂层导体都具有衬底、缓冲层(至少一层)和REBCO超导涂层三层结构,并开发出了如CeO2,LaAlO3,MgO,La2Zr2O7,BaZrO3等缓冲层材料。另一方面,随着采用RABiTS(轧制辅助双轴织构法)制备双轴织构的Ni基合金基带的日趋成熟,在RABiTS的Ni基合金基带外延生长高品质的缓冲层以及后续的超导层已逐渐成为制备第二代高温超导带材的主要技术趋势。However, the REBCO superconducting layer relies heavily on oxygen during the preparation process, and it is easy to oxidize the metal substrate. At the same time, metal ions will also diffuse into the superconducting layer, which will seriously affect the superconducting performance of REBCO. Therefore, a layer of buffer layer material must be added between the metal substrate and REBCO, which not only serves as an intermediate template for the epitaxial growth of the metal substrate from the REBCO, but also blocks the mutual diffusion of the two materials, so as to ensure the preparation of excellent performance REBCO HTS coated conductors. Therefore, high-temperature superconducting coated conductors have a three-layer structure of substrate, buffer layer (at least one layer) and REBCO superconducting coating, and developed such as CeO 2 , LaAlO 3 , MgO, La 2 Zr 2 O 7 , BaZrO 3 and other buffer layer materials. On the other hand, as the use of RABiTS (rolling-assisted biaxial texturing method) to prepare biaxially textured Ni-based alloy substrates has become increasingly mature, epitaxial growth of high-quality buffer layers on Ni-based alloy substrates of RABiTS and subsequent superstructure The conductive layer has gradually become the main technical trend of preparing the second-generation high-temperature superconducting tape.
此外,在Ni基合金基底上沉积氧化物缓冲层时,由于Ni基合金基底的自发不定向氧化,很容易导致取向杂乱的NiO的生成,进而严重影响后续超导层的织构生长。为了解决这个问题,通常采用还原气氛或者纯氩气氛中制备,以避免NiO的生成,这无疑提高了制备成本。另外一个有效的解决途径就是利用自氧化外延(SOE)技术使其预先生成织构的NiO,这样织构的NiO薄膜既可以做后续缓冲层和超导层织构的生长模板,又可以起到阻止Ni扩散的缓冲层作用,而自氧化外延(SOE)技术也将成为一种简单有效,成本低廉的制备涂层导体缓冲层的技术In addition, when the oxide buffer layer is deposited on the Ni-based alloy substrate, due to the spontaneous non-directional oxidation of the Ni-based alloy substrate, it is easy to generate NiO with disordered orientation, which seriously affects the texture growth of the subsequent superconducting layer. In order to solve this problem, it is usually prepared in a reducing atmosphere or a pure argon atmosphere to avoid the formation of NiO, which undoubtedly increases the preparation cost. Another effective solution is to use self-oxidation epitaxy (SOE) technology to pre-generate textured NiO, so that the textured NiO film can be used as a growth template for the subsequent buffer layer and superconducting layer texture, and can also play a role. The role of the buffer layer to prevent Ni diffusion, and self-oxidation epitaxy (SOE) technology will also become a simple, effective, and low-cost technology for preparing coated conductor buffer layers
国外Matsumoto等人[Physica C.2000,335:39]于2000年最早提出在RABiTS的Ni基带上利用SOE的方法制备出了双轴织构良好的NiO缓冲层,并在其上依次沉积了MgO和YBCO,得到Jc(77K,0T)=3×105A/cm2。近年,Huhne等人[Supercond.Sci.Technol.2006,19:169][Appl.Phys.Lett.2007,90:012510]发展了Mastsumoto等人的工作,分别在Ni-Ag,Ni-C,Ni-V,Ni-Ce和Ni-Mo合金基带上成功制备出了双轴织构良好的NiO缓冲层,并沉积了后续的BaZrO3、SrZrO3等缓冲层。但是他们大都是在高温1000℃-1200℃下进行制备,不仅工业设备要求高,高温下金属形变也高,而且向800℃左右超导层的制备温区过度的难度也大。开发一种低温下自氧化外延制备织构良好的NiO缓冲层的技术将对涂层导体的大规模应用起到非常重要的作用。Foreign Matsumoto et al [Physica C.2000, 335:39] first proposed in 2000 that a NiO buffer layer with a good biaxial texture was prepared on the Ni baseband of RABiTS by using the SOE method, and MgO was sequentially deposited on it. With YBCO, Jc(77K, 0T)=3×10 5 A/cm 2 is obtained. In recent years, Huhne et al [Supercond.Sci.Technol.2006, 19:169] [Appl.Phys.Lett.2007, 90:012510] developed the work of Mastsumoto et al. in Ni-Ag, Ni-C, Ni -V, Ni-Ce and Ni-Mo alloy substrates were successfully prepared NiO buffer layer with good biaxial texture, and subsequent buffer layers such as BaZrO 3 and SrZrO 3 were deposited. However, most of them are prepared at a high temperature of 1000°C-1200°C, which not only requires high industrial equipment, but also high metal deformation at high temperature, and it is also difficult to transition to the preparation temperature range of the superconducting layer around 800°C. The development of a low-temperature self-oxidative epitaxy technique to prepare a well-textured NiO buffer layer will play a very important role in the large-scale application of coated conductors.
此外,在二代的超导带材的应用开发中,缺乏可靠,性价比高,易于推广的带材制备技术是制约其大规模应用的瓶颈,一方面要求带材越长越好,另一方面如何在基带上制备出双面织构的缓冲层是急需解决的技术问题。In addition, in the application and development of the second-generation superconducting tape, the lack of reliable, cost-effective, and easy-to-promote tape preparation technology is the bottleneck restricting its large-scale application. On the one hand, the longer the tape, the better. How to prepare a double-sided textured buffer layer on the base tape is an urgent technical problem to be solved.
发明内容Contents of the invention
本发明的目的在于提供一种自氧化外延制备双面织构涂层导体NiO(200)缓冲层的方法。该方法的制作成本低,工艺简单,易制得品质良好的双面NiO(200)缓冲层薄膜,并且厚度容易控制,能有效地发挥涂层导体缓冲层的作用。The purpose of the present invention is to provide a method for preparing a NiO(200) buffer layer of a double-sided texture coating conductor by self-oxidation epitaxy. The method has low production cost and simple process, and is easy to prepare a good-quality double-sided NiO(200) buffer layer film, and the thickness is easy to control, and can effectively play the role of the coating conductor buffer layer.
本发明实现其发明目的所采用的技术方案是,一种自氧化外延制备双面织构涂层导体NiO(200)缓冲层的方法,其步骤是:The technical solution adopted by the present invention to realize its object of the invention is a kind of method for preparing double-sided texture coating conductor NiO (200) buffer layer from oxidation epitaxy, and its steps are:
a、基带的表面腐蚀修饰:将退火处理后双轴织构NiW合金(200)基带(宽为10mm),正反两面先后经过酒精,丙酮清洗后,在稀释后浓度为30%-50%的硝酸溶液中悬空浸渍40-120s,取出洗净,双面晾干。再将其在150体积的双氧水和1-4体积的氨水配置的混合修饰液中悬空浸渍20-60s,取出,洗净,双面晾干;a. Surface corrosion modification of the baseband: After the annealed biaxially textured NiW alloy (200) baseband (10mm in width), the front and back sides have been washed with alcohol and acetone successively, and the concentration after dilution is 30%-50%. Suspend and immerse in nitric acid solution for 40-120s, take it out, wash it, and dry it on both sides. Then suspend and immerse it in the mixed modification solution prepared by 150 volumes of hydrogen peroxide and 1-4 volumes of ammonia water for 20-60s, take it out, wash it, and dry it on both sides;
b、氧化热处理:将a步表面腐蚀修饰后的NiW合金(200)基带(宽为10mm)悬空放入内径大于10mm,小于13mm的陶瓷管中,再将陶瓷管推入管式气氛烧结炉中在氩气气氛中740-800℃温度条件下,氧化热处理20-50分钟,取出即得。b. Oxidation heat treatment: put the NiW alloy (200) base strip (10mm wide) after the surface corrosion modification in step a into the ceramic tube with an inner diameter greater than 10mm and less than 13mm, and then push the ceramic tube into the tubular atmosphere sintering furnace Under the temperature condition of 740-800°C in an argon atmosphere, oxidize heat treatment for 20-50 minutes, and then take it out.
与现有技术相比,本发明的有益效果是:Compared with prior art, the beneficial effect of the present invention is:
一、较1000℃及其以上高温工艺,740-800℃的中温制备NiO(200)缓冲层,温度低,成本低,热处理时间在20-50分钟,便于控制,同时也有利于超导层制备温区800℃左右过渡,有利于长带的连续化制备。1. Compared with the high temperature process of 1000°C and above, the NiO(200) buffer layer is prepared at a medium temperature of 740-800°C, the temperature is low, the cost is low, and the heat treatment time is 20-50 minutes, which is easy to control and is also conducive to the preparation of the superconducting layer The transition temperature range is around 800°C, which is conducive to the continuous preparation of long tapes.
二、开发出了一种新的腐蚀和修饰溶液,易于去除NiW合金表面上的W,防止太多单斜结构NiWO3的生成,提高了织构度,有助于后续缓冲层和超导层的沉积。2. A new corrosion and modification solution has been developed, which can easily remove W on the surface of NiW alloy, prevent the formation of too much monoclinic structure NiWO 3 , improve the texture, and help the subsequent buffer layer and superconducting layer deposition.
三、在制备过程中,通过控制热处理气氛流量,热处理时间和温度即可方便控制NiO(200)缓冲层的厚度。3. During the preparation process, the thickness of the NiO(200) buffer layer can be conveniently controlled by controlling the heat treatment atmosphere flow, heat treatment time and temperature.
四、通过悬空放置于陶瓷管的方法,简单有效的制得双面织构良好的涂层导体NiO(200)缓冲层,并且此方法也适合制备其它双面薄膜的缓冲层或超导层。4. A NiO(200) buffer layer with good double-sided texture coating conductor can be easily and effectively prepared by placing it in the air in the ceramic tube, and this method is also suitable for preparing buffer layers or superconducting layers of other double-sided thin films.
上述b步中氧化热处理的具体做法为:将管式气氛烧结炉快速升温到所述温度,当温度和通入气氛气流量稳定后,再将悬空放置的正反双面腐蚀修饰后的NiW合金(200)基带推入炉中,当基带在炉中的时间达到所述氧化热处理的时间后,将氧化后的基带从炉中推出,冷却至室温,即可。The specific method of oxidation heat treatment in the above b step is: quickly raise the temperature of the tubular atmosphere sintering furnace to the above-mentioned temperature, and when the temperature and the gas flow rate of the atmosphere are stabilized, then corrode the modified NiW alloy on both sides of the suspension placed (200) The base tape is pushed into the furnace. When the time of the base tape in the furnace reaches the oxidation heat treatment time, the oxidized base tape is pushed out from the furnace and cooled to room temperature.
上述b步中悬空放置于陶瓷管的方法,是指所用陶瓷管的内径大于基带本身宽度3mm左右,可使基带悬空即可,本方法也适合制备其它双面薄膜的缓冲层或超导层。The method of placing the ceramic tube suspended in the above b step means that the inner diameter of the ceramic tube used is about 3 mm larger than the width of the baseband itself, so that the baseband can be suspended in the air. This method is also suitable for preparing buffer layers or superconducting layers of other double-sided thin films.
下面结合附图和具体实施方式对本发明作进一步的详细说明。The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
附图说明 Description of drawings
图1是实施例一制得的NiO(200)缓冲层的正反两面X射线衍射图谱。Fig. 1 is the front and back X-ray diffraction patterns of the NiO(200) buffer layer prepared in Example 1.
图2是实施例一制得的NiO(200)缓冲层的正反两面的50000倍扫描电子显微镜(SEM)照片。Fig. 2 is a 50000 times scanning electron microscope (SEM) photo of the front and back sides of the NiO(200) buffer layer prepared in Example 1.
图3是实施例二制得的NiO(200)缓冲层的正反两面的X射线衍射图谱。Fig. 3 is the X-ray diffraction patterns of the front and back sides of the NiO(200) buffer layer prepared in Example 2.
图4是实施例二制得的NiO(200)缓冲层的正反两面的50000倍扫描电子显微镜(SEM)照片。4 is a 50000 times scanning electron microscope (SEM) photo of the front and back sides of the NiO(200) buffer layer prepared in Example 2.
图5是实施例三制得的NiO(200)缓冲层的正反两面的X射线衍射图谱。Fig. 5 is the X-ray diffraction patterns of the front and back sides of the NiO(200) buffer layer prepared in Example 3.
图6是实施例三制得的NiO(200)缓冲层的正反两面的50000倍扫描电子显微镜(SEM)照片。Fig. 6 is a 50000 times scanning electron microscope (SEM) photograph of the front and back sides of the NiO(200) buffer layer prepared in Example 3.
图1,3,5的纵坐标为衍射强度(Intensity)、任意单位(a.u.);横坐标为衍射角2θ,单位为度(deg)。The vertical coordinates of Figures 1, 3 and 5 are diffraction intensity (Intensity), arbitrary unit (a.u.); the horizontal coordinates are diffraction angle 2θ, and the unit is degree (deg).
具体实施方式 Detailed ways
实施例一Embodiment one
本发明的第一种具体实施方式是,一种自氧化外延制备双面织构涂层导体NiO(200)缓冲层的方法,其步骤是:The first embodiment of the present invention is a method for preparing a double-sided texture coating conductor NiO (200) buffer layer from oxidation epitaxy, the steps of which are:
a、基带的表面腐蚀修饰:将退火处理后双轴织构NiW合金(200)基带(宽为10mm),正反两面先后经过酒精,丙酮清洗后,在稀释后浓度为30%的硝酸溶液中悬空浸渍40s,取出洗净,两面晾干。再将其在150体积的双氧水和1-4体积的氨水配置的混合修饰液中悬空浸渍60s,取出,洗净,双面晾干;a. Surface corrosion modification of the baseband: After the annealed biaxial textured NiW alloy (200) baseband (10mm in width), the front and back sides have been cleaned by alcohol and acetone, and then diluted in a nitric acid solution with a concentration of 30%. Soak in the air for 40s, take it out, wash it, and dry it on both sides. Then suspend and immerse it in a mixed modification solution prepared with 150 volumes of hydrogen peroxide and 1-4 volumes of ammonia water for 60 seconds, take it out, wash it, and dry it on both sides;
b、氧化热处理:将a步表面腐蚀修饰后的NiW合金(200)基带(宽为10mm)悬空放入内径为11mm的陶瓷管中,再将陶瓷管推入管式气氛烧结炉中在氩气气氛中740℃温度条件下,氧化热处理50分钟,取出即得。b. Oxidation heat treatment: Put the NiW alloy (200) base strip (10mm wide) after surface corrosion modification in step a into a ceramic tube with an inner diameter of 11mm, and then push the ceramic tube into a tubular atmosphere sintering furnace in argon gas Under the temperature condition of 740°C in the atmosphere, oxidize heat treatment for 50 minutes, and then take it out.
本例中氧化处理的具体做法是:将管式气氛烧结炉快速升温到740℃,当温度和通入气氛气流量稳定后,再将悬空放置的正反双面腐蚀修饰后的NiW合金(200)基带推入炉中,当基带在炉中的时间达到50分钟后,将氧化后的基带从炉中推出,冷却至室温,即可。The specific method of oxidation treatment in this example is: quickly raise the temperature of the tubular atmosphere sintering furnace to 740 °C, and when the temperature and the flow rate of the atmosphere are stable, then corrode the modified NiW alloy (200 ) The baseband is pushed into the furnace, and when the time of the baseband in the furnace reaches 50 minutes, the oxidized baseband is pushed out from the furnace and cooled to room temperature.
图1是本发明实施例一的NiO(200)缓冲层的的正反两面X射线衍射图谱。由图1可知:所制得的NiO正反面都具有相似很好的(200)织构,并且NiWO3也为很好的织构生长。图2是本发明实施例一NiO(200)缓冲层的正反两面50000倍扫描电子显微镜(SEM)照片。由图2可知:缓冲层薄膜样品正反两面都平整、致密,无洞无缝。由此可知此实施例一制备出了织构良好,表面致密平整的NiO(200)的正反两面缓冲层。Fig. 1 is the front and back X-ray diffraction patterns of the NiO(200) buffer layer in Example 1 of the present invention. It can be seen from Figure 1 that both the front and back sides of the prepared NiO have similar good (200) textures, and NiWO 3 also grows with a good texture. Fig. 2 is a 50000 times scanning electron microscope (SEM) photo of the front and back sides of the NiO(200) buffer layer in Example 1 of the present invention. It can be seen from Figure 2 that the front and back sides of the buffer layer film sample are flat, dense, and seamless without holes. It can be seen that in Example 1, the front and back buffer layers of NiO(200) with good texture and dense and smooth surface were prepared.
实施例二Embodiment two
本例的制备方法依次由以下步骤构成:The preparation method of this example consists of the following steps in turn:
a、基带的表面腐蚀修饰:将退火处理后双轴织构NiW合金(200)基带(宽为10mm),正反两面先后经过酒精,丙酮清洗后,在稀释后浓度为40%的硝酸溶液中悬空浸渍100s,取出洗净,双面晾干。再将其在150体积的双氧水和1-4体积的氨水配置的混合修饰液中悬空浸渍30s,取出,洗净,双面晾干;a. Surface corrosion modification of the baseband: after the annealing treatment, the biaxially textured NiW alloy (200) baseband (10mm in width) is washed successively by alcohol and acetone on both sides, and diluted in a nitric acid solution with a concentration of 40%. Soak in the air for 100s, take it out, wash it, and dry it on both sides. Then suspend and immerse it in a mixed modification solution prepared with 150 volumes of hydrogen peroxide and 1-4 volumes of ammonia water for 30 seconds, take it out, wash it, and dry it on both sides;
b、氧化热处理:将a步表面腐蚀修饰后的NiW合金(200)基带(宽为10mm)悬空放入内径为12mm的陶瓷管中,再将陶瓷管推入管式气氛烧结炉中在氩气气氛中770℃温度条件下,氧化热处理30分钟,取出即得。b. Oxidation heat treatment: Put the NiW alloy (200) base strip (10mm wide) after surface corrosion modification in step a into a ceramic tube with an inner diameter of 12mm, and then push the ceramic tube into a tubular atmosphere sintering furnace in argon gas Under the temperature condition of 770°C in the atmosphere, oxidize heat treatment for 30 minutes, and then take it out.
本例中氧化处理的具体做法是:将管式气氛烧结炉快速升温到770℃,当温度和通入气氛气流量稳定后,再将悬空放置的正反双面腐蚀修饰后的NiW合金(200)基带推入炉中,当基带在炉中的时间达到30分钟后,将氧化后的基带从炉中推出,冷却至室温,即可。The specific method of oxidation treatment in this example is: quickly raise the temperature of the tubular atmosphere sintering furnace to 770 °C, and when the temperature and the flow rate of the atmosphere are stable, the NiW alloy (200 ) the baseband into the furnace, when the time of the baseband in the furnace reaches 30 minutes, the oxidized baseband is pushed out from the furnace and cooled to room temperature.
图3是本发明实施例二的NiO(200)缓冲层的的正反两面X射线衍射图谱。由图3可知:所制得的NiO正反面都具有相似很好的(200)织构,并且NiWO3也为很好的织构生长。图4是本发明实施例二NiO(200)缓冲层的正反两面50000倍扫描电子显微镜(SEM)照片。由图4可知:缓冲层样品正反两面都平整、致密,无洞无缝。由此可知此实施例二制备出了织构良好,表面致密平整的NiO(200)的正反两面缓冲层。Fig. 3 is the front and back X-ray diffraction patterns of the NiO(200) buffer layer in Example 2 of the present invention. It can be seen from Figure 3 that both the front and back sides of the prepared NiO have similar good (200) textures, and NiWO 3 also grows with a good texture. Fig. 4 is a 50000 times scanning electron microscope (SEM) photo of the front and back sides of the NiO(200) buffer layer in Example 2 of the present invention. It can be seen from Figure 4 that the front and back sides of the buffer layer sample are flat, dense, and seamless without holes. It can be seen from this that in Example 2, the front and back buffer layers of NiO(200) with good texture and dense and smooth surface were prepared.
实施例三Embodiment Three
本例的制备方法依次由以下步骤构成:The preparation method of this example consists of the following steps in turn:
a、基带的表面腐蚀修饰:将退火处理后双轴织构NiW合金(200)基带(宽为10mm),正反两面先后经过酒精,丙酮清洗后,在稀释后浓度为50%的硝酸溶液中悬空浸渍120s,取出洗净,双面晾干。再将其在150体积的双氧水和1-4体积的氨水配置的混合修饰液中悬空浸渍20s,取出,洗净,双面晾干;a, the surface corrosion modification of the baseband: after the annealing treatment, the biaxially textured NiW alloy (200) baseband (10mm in width), the front and back sides have been washed with alcohol and acetone successively, and then diluted in a nitric acid solution with a concentration of 50%. Soak in the air for 120s, take it out, wash it, and dry it on both sides. Then suspend and immerse it in a mixed modification solution prepared with 150 volumes of hydrogen peroxide and 1-4 volumes of ammonia water for 20 seconds, take it out, wash it, and dry it on both sides;
b、氧化热处理:将a步表面腐蚀修饰后的NiW合金(200)基带(宽为10mm)悬空放入内径为13mm的陶瓷管中,再将陶瓷管推入管式气氛烧结炉中在氩气气氛中800℃温度条件下,氧化热处理20分钟,取出即得。b. Oxidation heat treatment: put the NiW alloy (200) base strip (10mm wide) after surface corrosion modification in step a into a ceramic tube with an inner diameter of 13mm, and then push the ceramic tube into a tubular atmosphere sintering furnace in argon Under the temperature condition of 800°C in the atmosphere, oxidize heat treatment for 20 minutes, and then take it out.
本例中氧化处理的具体做法是:将管式气氛烧结炉快速升温到800℃,当温度和通入气氛气流量稳定后,再将悬空放置的正反双面腐蚀修饰后的NiW合金(200)基带推入炉中,当基带在炉中的时间达到20分钟后,将氧化后的基带从炉中推出,冷却至室温,即可。The specific method of oxidation treatment in this example is: quickly raise the temperature of the tubular atmosphere sintering furnace to 800 °C, and when the temperature and the flow rate of the atmosphere are stable, then corrode the NiW alloy (200° C. ) the baseband into the furnace, when the time of the baseband in the furnace reaches 20 minutes, push the oxidized baseband out of the furnace and cool to room temperature.
图5是本发明实施例三的NiO(200)缓冲层的的正反两面X射线衍射图谱。由图5可知:所制得的NiO正反面都具有相似很好的(200)织构,并且NiWO3也为很好的织构生长。图6是本发明实施例三NiO(200)缓冲层的正反两面50000倍扫描电子显微镜(SEM)照片。由图6可知:缓冲层样品正反两面都平整、致密,无洞无缝。由此可知此实施例三制备出了织构良好,表面致密平整的NiO(200)的正反两面缓冲层。Fig. 5 is the front and back X-ray diffraction patterns of the NiO(200) buffer layer in Example 3 of the present invention. It can be seen from Figure 5 that both the front and back sides of the prepared NiO have similar good (200) textures, and NiWO 3 also grows with a good texture. Fig. 6 is a 50000 times scanning electron microscope (SEM) photo of the front and back sides of the NiO(200) buffer layer in Example 3 of the present invention. It can be seen from Figure 6 that the front and back sides of the buffer layer sample are flat, dense, and seamless without holes. It can be seen that in Example 3, the front and back buffer layers of NiO(200) with good texture and dense and smooth surface were prepared.
本发明的一种自氧化外延制备双面织构涂层导体NiO(200)缓冲层的方法制备过程中使用的氨水的浓度为分析纯25%-28%,双氧水的浓度为分析纯30%,所选用陶瓷管的内径最好大于基带本身3mm左右,这样基带可以充分悬空放置在陶瓷管内。本悬空放置于陶瓷管的方法也适合制备其它涂层导体的双面缓冲层或超导层。整个烧结过程中,烧结炉中通入氩气,氩气的纯度最好为99.999%,制成品的性能得到保证;否则,制成品的性能将会降低。The concentration of ammonia water used in the preparation process of the method for preparing a NiO(200) buffer layer of a double-sided textured coating conductor by self-oxidation epitaxy of the present invention is 25%-28% of analytical purity, and the concentration of hydrogen peroxide is 30% of analytical purity. The inner diameter of the selected ceramic tube is preferably about 3mm larger than the baseband itself, so that the baseband can be fully suspended in the ceramic tube. The method of placing the ceramic tube suspended in the air is also suitable for preparing double-sided buffer layers or superconducting layers of other coated conductors. During the whole sintering process, argon gas is fed into the sintering furnace, and the purity of the argon gas is preferably 99.999%, so that the performance of the finished product is guaranteed; otherwise, the performance of the finished product will be reduced.
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