CN102075208A - Radio frequency front-end with low power consumption - Google Patents
Radio frequency front-end with low power consumption Download PDFInfo
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Abstract
本发明提出了一种低功耗射频前端,包括锁相环、低噪声放大器和功率放大器,所述锁相环包括压控振荡器,还包括模式切换控制器,所述模式切换控制器的两输出端分别接功率放大器及低噪声放大器的输入端,所述低噪声放大器及功率放大器分别通过第一负载网络和第二负载网络与压控振荡器相连接,所述模式切换控制器及压控振荡器均接电源端。本发明利用了电流复用技术,使得低噪声放大器、压控振荡器和功率放大器这三个模块的总功耗大大降低,而每个模块使用的电流没有减小,因此电路的性能不会有明显的恶化;引入模式切换控制器后可以将不需要使用的模块关断,进一步减小系统功耗。
The present invention proposes a low-power radio frequency front end, including a phase-locked loop, a low-noise amplifier, and a power amplifier. The phase-locked loop includes a voltage-controlled oscillator, and a mode switching controller. The two modes of the mode switching controller The output ends are respectively connected to the input ends of the power amplifier and the low noise amplifier, the low noise amplifier and the power amplifier are respectively connected to the voltage-controlled oscillator through the first load network and the second load network, and the mode switching controller and the voltage control The oscillators are all connected to the power supply. The present invention utilizes the current multiplexing technology, so that the total power consumption of the three modules of the low-noise amplifier, the voltage-controlled oscillator and the power amplifier is greatly reduced, and the current used by each module is not reduced, so the performance of the circuit will not be reduced. Obvious deterioration; after the introduction of the mode switching controller, the unused modules can be turned off, further reducing the system power consumption.
Description
技术领域technical field
本发明涉及的是一种射频前端,具体涉及的是一种低功耗射频前端。The invention relates to a radio frequency front end, in particular to a low power consumption radio frequency front end.
背景技术Background technique
在无线传感网、ZigBee和GPS中,低功耗收发系统(模块)设计是主要的目标。实现低功耗设计的方法之一是将MOS管偏置在亚阈值区。但是此方法存在一些问题,比如在亚阈值区工作的晶体管的尺寸一般都很大,限制了晶体管的最高工作频率,也就是说电路的工作速度比较低,通常这种方法不适合在射频领域中应用。另外一种方法是减小各支路晶体管的尺寸,使得获得较小的工作电流,这将导致较大的失配和闪烁噪声。以上讨论表明,在射频领域中,使晶体管工作于亚阈值区,获得较小的工作电流或减小晶体管尺寸,获得较小的工作电流都存在一定的问题。In wireless sensor networks, ZigBee and GPS, low power consumption transceiver system (module) design is the main goal. One of the methods to achieve low power consumption design is to bias the MOS tube in the sub-threshold region. However, there are some problems with this method. For example, the size of transistors operating in the subthreshold region is generally large, which limits the maximum operating frequency of the transistor, which means that the operating speed of the circuit is relatively low. Usually, this method is not suitable for use in the radio frequency field. application. Another method is to reduce the size of each branch transistor to obtain a smaller operating current, which will lead to larger mismatch and flicker noise. The above discussion shows that in the radio frequency field, there are certain problems in making the transistor work in the sub-threshold region to obtain a smaller working current or reducing the size of the transistor to obtain a smaller working current.
发明内容Contents of the invention
针对现有技术上存在的不足,本发明目的是在于提供一种低功耗的射频前端,复用了一路电流,供多个模块使用,对于每个模块电流足够保证其性能,而对于多个模块在不严重恶化性能的前提下实现了低功耗。Aiming at the deficiencies in the prior art, the purpose of the present invention is to provide a low-power RF front-end, which multiplexes one current for use by multiple modules, and the current for each module is sufficient to ensure its performance, while for multiple The module achieves low power consumption without seriously degrading performance.
为了实现上述目的,本发明是通过如下的技术方案来实现:In order to achieve the above object, the present invention is achieved through the following technical solutions:
本发明包括锁相环、低噪声放大器和功率放大器,锁相环包括压控振荡器,还包括模式切换控制器,模式切换控制器的两输出端分别接功率放大器及低噪声放大器的输入端,低噪声放大器及功率放大器分别通过第一负载网络和第二负载网络与压控振荡器相连接,模式切换控制器及压控振荡器均接电源端。本发明的压控振荡器、功率放大器和低噪声放大器这三个模块共用一路电流,大大降低了电路的总功耗。The present invention includes a phase-locked loop, a low-noise amplifier and a power amplifier. The phase-locked loop includes a voltage-controlled oscillator and a mode switching controller. The two output ends of the mode switching controller are respectively connected to the input ends of the power amplifier and the low-noise amplifier. The low noise amplifier and the power amplifier are respectively connected to the voltage-controlled oscillator through the first load network and the second load network, and both the mode switching controller and the voltage-controlled oscillator are connected to the power supply terminal. The voltage-controlled oscillator, the power amplifier and the low-noise amplifier of the present invention share one current, which greatly reduces the total power consumption of the circuit.
上述模式切换控制器包括晶体管,其中,第十七晶体管的栅极接第十晶体管的栅极,其公共端接控制逻辑输入信号,源极接电源端,漏极接第十晶体管的漏极;第十晶体管的源极接地,漏极接第十八晶体管的栅极和第十一晶体管的栅极;第十八晶体管的源极接电源端,漏极接第十一晶体管的漏极,栅极接第十四晶体管的栅极和第十五晶体管的栅极;第十一晶体管的漏极接第十三晶体管的栅极和第十六晶体管的栅极,源极接地;第十四晶体管的漏极接低噪声放大器,源极接地;第十三晶体管的源极接第十四晶体管的漏极,漏极接第十二晶体管的栅极;第十二晶体管的漏极接基准电流,栅极与漏极短接,源极接地;第十六晶体管的源极接地,漏极接功率放大器;第十五晶体管的源极接第十六晶体管的漏极,漏极接第十二晶体管的漏极。The above-mentioned mode switching controller includes a transistor, wherein the gate of the seventeenth transistor is connected to the gate of the tenth transistor, its common terminal is connected to the control logic input signal, its source is connected to the power supply terminal, and its drain is connected to the drain of the tenth transistor; The source of the tenth transistor is grounded, and the drain is connected to the gate of the eighteenth transistor and the gate of the eleventh transistor; the source of the eighteenth transistor is connected to the power supply terminal, and the drain is connected to the drain of the eleventh transistor, and the gate The pole is connected to the gate of the fourteenth transistor and the gate of the fifteenth transistor; the drain of the eleventh transistor is connected to the gate of the thirteenth transistor and the gate of the sixteenth transistor, and the source is grounded; the fourteenth transistor The drain of the thirteenth transistor is connected to the low-noise amplifier, and the source is grounded; the source of the thirteenth transistor is connected to the drain of the fourteenth transistor, and the drain is connected to the gate of the twelfth transistor; the drain of the twelfth transistor is connected to the reference current, The gate and the drain are short-circuited, and the source is grounded; the source of the sixteenth transistor is grounded, and the drain is connected to the power amplifier; the source of the fifteenth transistor is connected to the drain of the sixteenth transistor, and the drain is connected to the twelfth transistor the drain.
上述低噪声放大器包括第三电感、第四电感、第一电容、与第一电容一端串联的第五电感、第二电容、与第二电容一端串联的第六电感、第二晶体管、第三晶体管、第四晶体管和第五晶体管;所述第五电感和第六电感的另一段分别接第四晶体管的栅极和第五晶体管的栅极,第四晶体管和第五晶体管的源极分别接第三电感和第四电感的一端,所述第三电感和第四电感的另一端均接地,所述第四晶体管和第五晶体管的漏极分别接第二晶体管和第三晶体管的源极,第二晶体管和第三晶体管的栅极均接第一偏置电压,第二晶体管及第三晶体管的漏极分别接第一负载网络及第二负载网络。The above-mentioned low noise amplifier comprises a third inductor, a fourth inductor, a first capacitor, a fifth inductor connected in series with one end of the first capacitor, a second capacitor, a sixth inductor connected in series with one end of the second capacitor, a second transistor, and a third transistor , the fourth transistor and the fifth transistor; the other section of the fifth inductance and the sixth inductance are respectively connected to the gate of the fourth transistor and the gate of the fifth transistor, and the sources of the fourth transistor and the fifth transistor are respectively connected to the first One end of the third inductance and the fourth inductance, the other end of the third inductance and the fourth inductance are grounded, the drains of the fourth transistor and the fifth transistor are respectively connected to the sources of the second transistor and the third transistor, and The gates of the second transistor and the third transistor are both connected to the first bias voltage, and the drains of the second transistor and the third transistor are respectively connected to the first load network and the second load network.
上述功率放大器包括第三电容、第四电容、第六晶体管、第七晶体管、第八晶体管和第九晶体管;所述第三电容和第四电容分别接第六晶体管的栅极和第七晶体管的栅极,第六晶体管的源极和第七晶体管的源极均接地,第六晶体管的漏极和第七晶体管的漏极分别接第八晶体管的源极和第九晶体管的源极,第八晶体管和第九晶体管的栅极均接第二偏置电压,第八晶体管及第九晶体管的漏极分别接第一负载网络及第二负载网络。The power amplifier includes a third capacitor, a fourth capacitor, a sixth transistor, a seventh transistor, an eighth transistor, and a ninth transistor; the third capacitor and the fourth capacitor are respectively connected to the gate of the sixth transistor and the gate of the seventh transistor. The grid, the source of the sixth transistor and the source of the seventh transistor are all grounded, the drain of the sixth transistor and the drain of the seventh transistor are respectively connected to the source of the eighth transistor and the source of the ninth transistor, and the eighth transistor is connected to the source of the ninth transistor. The gates of the transistor and the ninth transistor are both connected to the second bias voltage, and the drains of the eighth transistor and the ninth transistor are respectively connected to the first load network and the second load network.
上述压控振荡器包括谐振网络、第零晶体管和第一晶体管;所述谐振网络包括第零电感、第零电容和可变电容,三者相互并联,且第零电感接电源端;第零晶体管的栅极接第一晶体管的漏极,其公共端接可变电容的一个极板;第一晶体管的栅极接第零晶体管的漏极,其公共端接可变电容的另一个极板;所述第一负载网络及第二负载网络分别接第零晶体管及第一晶体管的源极。The voltage-controlled oscillator includes a resonant network, a zeroth transistor, and a first transistor; the resonant network includes a zeroth inductance, a zeroth capacitor, and a variable capacitor, and the three are connected in parallel with each other, and the zeroth inductance is connected to the power supply terminal; the zeroth transistor The gate of the first transistor is connected to the drain of the first transistor, and its common terminal is connected to a plate of the variable capacitor; the gate of the first transistor is connected to the drain of the zeroth transistor, and its common terminal is connected to the other plate of the variable capacitor; The first load network and the second load network are respectively connected to the sources of the zeroth transistor and the first transistor.
上述第零晶体管的源极和第一晶体管的源极通过大容量的第七电容相连,对射频信号短路,低中频信号开路,保持压控振荡器尾电流恒定;所述第零晶体管的源极及第一晶体管的源极还分别连接有第五电容和第六电容,第五电容和第六电容能够有效地抑制输出共模电平的变化,使其保持在适当的范围之内。The source of the above-mentioned zeroth transistor is connected to the source of the first transistor through the seventh large-capacity capacitor, which is short-circuited to the radio frequency signal and opened to the low-intermediate frequency signal, so as to keep the tail current of the voltage-controlled oscillator constant; the source of the zeroth transistor The fifth capacitor and the sixth capacitor are respectively connected to the source of the first transistor, and the fifth capacitor and the sixth capacitor can effectively suppress the change of the output common mode level and keep it within an appropriate range.
上述第一负载网络包括第一电感和与第一电感相连接的第一电容阵列;第二负载网络包括第二电感和与第二电感相连接的第二电容阵列。采用第一电容阵列及第二电容阵列,使得在接收和发射模式下,均可以实现负载的数字控制,可以修正不同工作模式下不同连接关系引起的寄生电容的差异,同时也可以补偿工艺、温度、电压引起的电容偏差。The first load network includes a first inductor and a first capacitor array connected to the first inductor; the second load network includes a second inductor and a second capacitor array connected to the second inductor. Using the first capacitor array and the second capacitor array, the digital control of the load can be realized in both the receiving and transmitting modes, and the difference in parasitic capacitance caused by different connection relationships in different working modes can be corrected, and the process and temperature can also be compensated. , Capacitance deviation caused by voltage.
本发明使得低噪声放大器、压控振荡器和功率放大器这三个模块的总功耗大大降低,而每个模块使用的电流没有减小,因此电路的性能不会有明显的恶化;引入模式切换控制器后可以将不需要使用的模块关断,进一步减小系统功耗;使用电容阵列使得低噪声放大器和功率放大器的负载可以通过数字控制的方法进行调整,可以修正不同工作模式下不同连接关系引起的寄生电容的差异,同时也可以补偿工艺、温度、电压引起的电容偏差;在压控振荡器交叉耦合管源极引入电容第五电容和第六电容,能够有效地抑制输出共模电平的变化,使其保持在适当的范围之内。The present invention greatly reduces the total power consumption of the three modules of the low-noise amplifier, the voltage-controlled oscillator and the power amplifier, while the current used by each module is not reduced, so the performance of the circuit will not be significantly deteriorated; the introduction of mode switching After the controller, the unnecessary modules can be turned off to further reduce the power consumption of the system; the load of the low-noise amplifier and the power amplifier can be adjusted through digital control by using the capacitor array, and different connection relationships under different working modes can be corrected The difference in parasitic capacitance caused by this can also compensate for the capacitance deviation caused by the process, temperature, and voltage; the fifth capacitor and the sixth capacitor are introduced into the source of the voltage-controlled oscillator cross-coupling tube, which can effectively suppress the output common-mode level changes to keep it within an appropriate range.
附图说明Description of drawings
下面结合附图和具体实施方式来详细说明本发明:Describe the present invention in detail below in conjunction with accompanying drawing and specific embodiment:
图1为本发明的系统图;Fig. 1 is a system diagram of the present invention;
图2为本发明的核心电路框图;Fig. 2 is a core circuit block diagram of the present invention;
图3为本发明的核心电路原理图;Fig. 3 is a schematic diagram of the core circuit of the present invention;
图4为本发明工作于接收模式时相关输出波形图(图中A为低噪声放大器输入波形,B为压控振荡器输出波形,C为低噪声放大器输出波形)。Fig. 4 is the relevant output waveform diagram when the present invention works in receiving mode (A among the figures is the input waveform of the low noise amplifier, B is the output waveform of the voltage controlled oscillator, and C is the output waveform of the low noise amplifier).
图中各序号分别表示:The serial numbers in the figure represent:
1-压控振荡器;2a-第一负载网络;2b-第二负载网络;3-功率放大器;4-低噪声放大器;5-模式切换控制器;Mod-控制逻辑输入信号;BiasL-第一控制逻辑输出信号;BiasP-第二控制逻辑输出信号;Ibias-基准电流;vco1-压控振荡器的第一差分输出端;vco2-压控振荡器的第二差分输出端;LNAin1-低噪声放大器的第一差分输入端;LNAin2-低噪声放大器的第二差分输入端;PAin1-功率放大器的第一差分输入端;PAin2-功率放大器的第二差分输入端;out1-第一公共差分输出端;out2-第二公共差分输出端;fout-中频输出信号;fin-中频输入信号;V1-第一偏置电压;V2-第二偏置电压;M1-第一晶体管;M2-第二晶体管;M3-第三晶体管;M4-第四晶体管;M5-第五晶体管;M6-第六晶体管;M7-第七晶体管;M8-第八晶体管;M9-第九晶体管;M10-第十晶体管;M11-第十一晶体管;M12-第十二晶体管;M13-第十三晶体管;M14-第十四晶体管;M15-第十五晶体管;M16-第十六晶体管;P0-第十七晶体管;P1-第十八晶体管;R0-第零电阻;R1-第一电阻;R2-第二电阻;R3-第三电阻;L0-第零电感;L1-第一电感;L2-第二电感;L3-第三电感;L4-第四电感;L5-第五电感;L6-第六电感;C0-第零电容;C1-第一电容;C2-第二电容;C3-第三电容;C4-第四电容;C5-第五电容;C6-第六电容;Cv-可变电容;Cc-第七电容;CO1-第八电容;CO2-第九电容;K[1]、K[2]...K[n]-控制字;C[1]、C[2]...C[n]-二进制权重电容。1-voltage controlled oscillator; 2a-first load network; 2b-second load network; 3-power amplifier; 4-low noise amplifier; 5-mode switching controller; Mod-control logic input signal; BiasL-first Control logic output signal; BiasP-second control logic output signal; Ibias-reference current; vco1-the first differential output of the voltage-controlled oscillator; vco2-the second differential output of the voltage-controlled oscillator; LNAin1-low noise amplifier The first differential input terminal of LNAin2-the second differential input terminal of the low noise amplifier; PAin1-the first differential input terminal of the power amplifier; PAin2-the second differential input terminal of the power amplifier; out1-the first common differential output terminal; out2-second common differential output terminal; fout-IF output signal; fin-IF input signal; V1-first bias voltage; V2-second bias voltage; M1-first transistor; M2-second transistor; M3 - third transistor; M4-fourth transistor; M5-fifth transistor; M6-sixth transistor; M7-seventh transistor; M8-eighth transistor; M9-ninth transistor; M10-tenth transistor; M11-th Eleventh transistor; M12-twelfth transistor; M13-thirteenth transistor; M14-fourteenth transistor; M15-fifteenth transistor; M16-sixteenth transistor; P0-seventeenth transistor; P1-tenth Eight transistors; R0-the zeroth resistance; R1-the first resistance; R2-the second resistance; R3-the third resistance; L0-the zeroth inductance; L1-the first inductance; L2-the second inductance; L3-the third inductance ; L4-fourth inductance; L5-fifth inductance; L6-sixth inductance; C0-zero capacitance; C1-first capacitance; C2-second capacitance; C3-third capacitance; C4-fourth capacitance; C5 -Fifth capacitor; C6-sixth capacitor; Cv-variable capacitor; Cc-seventh capacitor; CO1-eighth capacitor; CO2-ninth capacitor; K[1], K[2]...K[n ] - control word; C[1], C[2]...C[n] - binary weight capacitors.
具体实施方式Detailed ways
为使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解,下面结合具体实施方式,进一步阐述本发明。In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific embodiments.
参见图1和图2,本发明包括锁相环6、低噪声放大器4、功率放大器3和模式切换控制器5,锁相环6包括压控振荡器1。该压控振荡器1的电流是与低噪声放大器4和功率放大器3复用的。下混频器7b输入来自低噪声放大器4的输出射频信号和锁相环6提供的本振信号,产生中频输出信号fout;上混频器7a输入来自于中频输入信号fin和锁相环6提供的本振信号,输出作为功率放大器3的输入信号。Referring to FIG. 1 and FIG. 2 , the present invention includes a phase-locked loop 6 , a low-
模式切换控制器5的两输出端分别接功率放大器3及低噪声放大器4,功率放大器3及低噪声放大器4分别通过第一负载网络2a和第二负载网络2b与压控振荡器1相连接,模式切换控制器5及压控振荡器1均接电源端。电源端为压控振荡器1和模式切换控制器5供电,而功率放大器3和低噪声放大器4则共用压控振荡器1的电流。The two output terminals of the
本发明采用多模块层叠电流复用技术,通过模式切换控制器5控制为层叠连接的压控振荡器1和低噪声放大器4或压控振荡器1和功率放大器3提供偏置电流,使得功率放大器3和低噪声放大器4选择性工作。工作在发射模式时,压控振荡器1与功率放大器3层叠连接,功率放大器3共用压控振荡器1的尾电流,低噪声放大器4不工作;而工作于接收模式时,模式切换控制器5将切断压控振荡器1与功率放大器3的层叠通路,同时导通压控振荡器1与低噪声放大器4的层叠通路,低噪声放大器4共用压控振荡器1的尾电流,功率放大器3不工作。本发明的压控振荡器1、功率放大器3和低噪声放大器4这三个模块共用一路电流,大大降低了电路的总功耗。The present invention adopts multi-module lamination current multiplexing technology, and provides bias current for the voltage-controlled
低噪声放大器4及功率放大器3分别共用第一负载网络2a和第二负载网络2b。第一负载网络2a包括第一电感L1和第一电容阵列;第二负载网络2b包括第二电感L2和第二电容阵列。第一电容阵列和第二电容阵列均由二进制权重电容C[1]、C[2]...C[n]及开关组成,开关漏极分别接二进制权重电容C[1]、C[2]...C[n]下极板,栅极分别接控制字K[1]、K[2]...K[n],开关源极均接地。The
第一负载网络2a及第二负载网络2b分别通过改变第一电容阵列及第二电容阵列的控制字K[1]、K[2]...K[n],可以选通不同的电容,与第一电感L1及第二电感L2谐振。采用第一电容阵列及第二电容阵列的好处是:在接收和发射模式下均可以实现负载的数字控制,可以修正不同工作模式下不同连接关系引起的寄生电容的差异,同时也可以补偿工艺、温度、电压引起的电容偏差。The
参见图3,本发明的模式切换控制器5包括晶体管,其中,第十七晶体管M17的栅极接第十晶体管M10的栅极,其公共端接控制逻辑输入信号Mod,源极接电源端,漏极接第十晶体管M10的漏极;第十晶体管M10的源极接地,漏极接第十八晶体管M18的栅极和第十一晶体管M11的栅极;第十八晶体管M18的源极接电源端,漏极接第十一晶体管M11的漏极,栅极接第十四晶体管M14的栅极和第十五晶体管M15的栅极;第十一晶体管M11的漏极接第十三晶体管M13的栅极和第十六晶体管M16的栅极,源极接地;第十四晶体管M14的漏极通过第零电阻R0及第一电阻R1接低噪声放大器4,源极接地;第十三晶体管M13的源极接第十四晶体管M14的漏极,漏极接第十二晶体管M12的栅极;第十二晶体管M12的漏极接基准电流Ibias,栅极与漏极短接,源极接地;第十六晶体管M16的源极接地,漏极通过第二电阻R2及第三电阻R3接功率放大器3;第十五晶体管M15的源极接第十六晶体管M16的漏极,漏极接第十二晶体管M12的漏极。Referring to FIG. 3 , the
其中,第十三晶体管M13和第十四晶体管M14组成第一开关,第十五晶体管M15和第十六晶体管M16组成第二开关;第十七晶体管M17和第十晶体管M10构成第一反相器,第十八晶体管M18和第十一晶体管M11组成第二反相器,第一反相器和第二反相器产生控制逻辑输入信号Mod的同相和反相信号来控制第一开关和第二开关。Among them, the thirteenth transistor M13 and the fourteenth transistor M14 form the first switch, the fifteenth transistor M15 and the sixteenth transistor M16 form the second switch; the seventeenth transistor M17 and the tenth transistor M10 form the first inverter , the eighteenth transistor M18 and the eleventh transistor M11 form the second inverter, and the first inverter and the second inverter generate the in-phase and inversion signals of the control logic input signal Mod to control the first switch and the second switch.
低噪声放大器4包括第三电感L3、第四电感L4、第一电容C1、与第一电容C1下极板相连接的第五电感L5、第二电容C2、与第二电容C2下极板相连接的第六电感L6、第二晶体管M2、第三晶体管M3、第四晶体管M4和第五晶体管M5。低噪声放大器的第一差分输入端LNAin1和低噪声放大器的第二差分输入端LNAin2分别接第一电容C1的上极板和第二电容C2的上极板;第五电感L5和第六电感L6的另一端分别接第四晶体管M4的栅极和第五晶体管M5的栅极,第四晶体管M4和第五晶体管M5的源极分别接第三电感L3和第四电感L4的一端,第三电感L3和第四电感L4的另一端均接地,第四晶体管M4和第五晶体管M5的漏极分别接第二晶体管M2和第三晶体管M3的源极,第二晶体管M2和第三晶体管M3的栅极均接第一偏置电压V1,第一偏置电压V1由参考电压源和缓冲器构成,第二晶体管M2的漏极接第一电感L1下端、第一电容阵列和小容量的第九电容CO2上极板,第三晶体管M3的漏极接第二电感L2下端、第二电容阵列和第八电容CO1的上极板。第四晶体管M4的栅极及第五晶体管M5的栅极分别与第零电阻R0及第一电阻R1相连接。第八电容CO1的下极板及第九电容CO2的下极板分别接第一公共差分输出端out1及第二公共差分输出端out2。The low-
第二晶体管M2、第四晶体管M4和第三晶体管M3、第五晶体管M5分别构成共源共栅结构,作为低噪声放大器4的放大管,提供一定的增益,同时减小第一公共差分输出端out1及第二公共差分输出端out2对放大管的影响。第三电感L3、第四电感L4、第五电感L5和第六电感L6用于低噪声放大器4的输入阻抗匹配,第一电容C1和第二电容C2用于隔离直流信号,并将低噪声放大器的第一差分输入端LNAin1及低噪声放大器的第二差分输入端LNAin2耦合到低噪声放大器4的输入管。The second transistor M2, the fourth transistor M4, the third transistor M3, and the fifth transistor M5 respectively form a cascode structure, which serves as the amplifier tube of the low-
功率放大器3包括第三电容C3、第四电容C4、第六晶体管M6、第七晶体管M7、第八晶体管M8和第九晶体管M9;功率放大器的第一差分输入端PAin1和功率放大器的第二差分输入端PAin2分别接第三电容C3的上极板和第四电容C4的上极板,第三电容C3的下极板和第四电容C4的下极板分别接第六晶体管M6的栅极和第七晶体管M7的栅极,第六晶体管M6的源极和第七晶体管M7的源极均接地,第六晶体管M6的漏极和第七晶体管M7的漏极分别接第八晶体管M8的源极和第九晶体管M9的源极,第八晶体管M8的栅极和第九晶体管M9的栅极均接第二偏置电压V2,第二偏置电压V2由参考电压源和缓冲器构成,第八晶体管M8的漏极接第一电感L1下端、第一电容阵列和第九电容CO2的上极板,第九晶体管M9的漏极接第二电感L2下端、第二电容阵列和第八电容CO1的上极板;第八电容CO1的下极板和第九电容CO2的下极板分别接第一公共差分输出端out1及第二公共差分输出端out2。第六晶体管M6的栅极及第七晶体管M7的栅极分别与第二电阻R2及第三电阻R3相连接。第一公共差分输出端out1及第二公共差分输出端out2为低噪声放大器4和功率放大器3的公共输出端。The
第六晶体管M6、第八晶体管M8和第七晶体管M7、第九晶体管M9分别构成共源共栅结构,作为功率放大器3的放大管,提供较高的功率增益;第三电容C3和第四电容C4用于隔离直流信号,并将功率放大器的第一差分输入端PAin1和功率放大器的第二差分输入端PAin2耦合到功率放大器3的输入管。The sixth transistor M6, the eighth transistor M8, the seventh transistor M7, and the ninth transistor M9 respectively form a cascode structure, which serves as an amplifying tube of the
压控振荡器1包括谐振网络、第零晶体管和第一晶体管M1,vco1为压控振荡器的第一差分输出端,vco2为压控振荡器的第二差分输出端。谐振网络包括第零电感L0、第零电容C0和可变电容Cv,三者相互并联,且第零电感L0接电源端;第零晶体管的栅极接第一晶体管M1的漏极,其公共端接可变电容Cv的一个极板,第一晶体管M1的栅极接第零晶体管的漏极,其公共端接可变电容Cv的另一个极板。第一晶体管M1和第零晶体管构成负阻,给压控振荡器1提供维持振荡的能量。The voltage controlled
第零晶体管的源极和第一晶体管M1的源极通过大容量的第七电容Cc相连,通过第七电容Cc连接,对射频信号短路,低中频信号开路,保持压控振荡器1尾电流恒定;同时第零晶体管的源极和第一晶体管M1的源极分别接第五电容C5的上极板和第六电容C6的上极板,第五电容C5的下极板和第六电容C6的下极板均接地,第五电容C5和第六电容C6能够有效地抑制输出共模电平的变化,使其保持在适当的范围之内。同时,第零晶体管及第一晶体管M1的源极分别与第一电感L1及第二电感L2的上端相连接。The source of the zeroth transistor and the source of the first transistor M1 are connected through the seventh large-capacity capacitor Cc, connected through the seventh capacitor Cc, the radio frequency signal is short-circuited, the low-intermediate frequency signal is open-circuited, and the tail current of the voltage-controlled
以下为本发明的工作过程:Following is the working process of the present invention:
当控制逻辑输入信号Mod为高电平时,第十三晶体管M13和第十六晶体管M16导通,第十四晶体管M14、第十五晶体管M15关断,所以第二控制逻辑输出信号BiasP电平被下拉到地电位,功率放大器3被切断,而第一控制逻辑输出信号BiasL电平与第十二晶体管M12栅漏极电位相同,此时,第十二晶体管M12、第四晶体管M4和第五晶体管M5构成第一电流镜,为低噪声放大器4及压控振荡器1层叠结构的两条支路提供电流。When the control logic input signal Mod is at a high level, the thirteenth transistor M13 and the sixteenth transistor M16 are turned on, and the fourteenth transistor M14 and the fifteenth transistor M15 are turned off, so the level of the second control logic output signal BiasP is controlled by Pull down to the ground potential, the
反之,当控制逻辑输入信号Mod为低电平时,第十四晶体管M14、第十五晶体管M15导通,第十三晶体管M13和第十六晶体管M16关断,低噪声放大器4被切断,压控振荡器1和功率放大器3构成层叠结构,由第十二晶体管M12、第六晶体管M6和第七晶体管M7构成的第二电流镜为其提供电流。Conversely, when the control logic input signal Mod is at a low level, the fourteenth transistor M14 and the fifteenth transistor M15 are turned on, the thirteenth transistor M13 and the sixteenth transistor M16 are turned off, the
当控制逻辑输入信号Mod为高电平时,为接收模式;当控制逻辑输入信号Mod为低电平时,为发射模式;两种工作模式由模式切换控制器5进行切换。When the control logic input signal Mod is high level, it is the receiving mode; when the control logic input signal Mod is low level, it is the transmission mode; the two working modes are switched by the
参见图4,虽然本发明采用了层叠技术,但是低噪声放大器4的工作并不影响压控振荡器1的起振,压控振荡器1起振后,也不会对低噪声放大器4的工作有影响,所以压控振荡器1与低噪声放大器4的层叠结构能够互不影响的工作。同样的,压控振荡器1与功率放大器3的层叠结构也能正常工作。Referring to Fig. 4, although the present invention adopts the lamination technology, the work of the
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。The basic principles and main features of the present invention and the advantages of the present invention have been shown and described above. Those skilled in the industry should understand that the present invention is not limited by the above-mentioned embodiments. What are described in the above-mentioned embodiments and the description only illustrate the principle of the present invention. Without departing from the spirit and scope of the present invention, the present invention will also have Variations and improvements are possible, which fall within the scope of the claimed invention. The protection scope of the present invention is defined by the appended claims and their equivalents.
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