CN102043340B - Method for uniformly spraying photoresist - Google Patents
Method for uniformly spraying photoresist Download PDFInfo
- Publication number
- CN102043340B CN102043340B CN201010524828A CN201010524828A CN102043340B CN 102043340 B CN102043340 B CN 102043340B CN 201010524828 A CN201010524828 A CN 201010524828A CN 201010524828 A CN201010524828 A CN 201010524828A CN 102043340 B CN102043340 B CN 102043340B
- Authority
- CN
- China
- Prior art keywords
- wafer
- nozzle
- speed
- photoresist
- fillet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The invention relates to a process for processing a wafer for an integrated circuit, in particular to a method for uniformly spraying photoresist on the wafer, aiming to solve the problem existing in the prior art that the photoresist layer thickness uniformity index needs to further improve. The wafer to be coated and processed is rotated centrifugally, and a spray nozzle is made to move horizontally along the diameter direction of the wafer to spray the photoresist. Chain-shaped photoresist spots are formed by the sprayed photoresist on the wafer, wherein the trajectory of the photoresist spots is in the shape of a discal mosquito-repellent incense. The centrifugal rotation speed of the wafer and the horizontal movement speed of the spray nozzle are set according to the established process formula. The method for uniformly spraying the photoresist on the wafer can effectively ensure that the thickness of the photoresist in the seams of the photoresist spots is consistent with that of the photoresist in the central areas of the photoresist spots, can meet the continuously enhanced photoresist layer thickness uniformity index requirement and can improve the capacity of a photoresist spraying module.
Description
Technical field
The present invention relates to integrated circuit and make the process technology of wafer, specifically a kind of method that on wafer, obtains even jet-coating photoresit.
Background technology
In the existing spraying photoresist technology, the wafer of processing to be sprayed is placed on specific working position and keeps motionless, moves sprinkling photoresist according to " it " font route toward complex plane through special nozzle and forms gum spot, obtains the photoresist layer of crystal column surface.
Along with scientific-technical progress, the coating material kind of spraying crystal column surface needs to increase, and photoresist layer thickness evenness index needs further to improve, and makes the process of spraying photoresist processing wafer increase supporting systemic technical data refinement more.
Summary of the invention
The object of the present invention is to provide a kind of method of even spraying photoresist, solve the problems such as the further raising of photoresist layer thickness evenness index needs that exist in the prior art.
Technical scheme of the present invention is:
A kind of method of even spraying photoresist, when wafer rotated, nozzle moved horizontally the sprinkling photoresist along the diameter wafer direction.
The method of described even spraying photoresist, the wafer of processing to be sprayed are carried out centrifugal rotation, nozzle moves horizontally the sprinkling photoresist along the diameter wafer direction, and the sprinkling photoresist forms on wafer and is the chain gum spot, and the gum spot track is " coiled mosquito-repellent incense " shape; Afterwards, it is air-dry that the wafer of spray process has carried out high rotating speed, and high rotating speed is 100-400 rev/min.
The method of described even spraying photoresist, the speed of the centrifugal rotation of wafer are 5-400 rev/min, and the speed that nozzle moves horizontally along the diameter wafer direction is the 2-40 mm/second.
The method of described even spraying photoresist; The height of nozzle distance wafer is 5～50 millimeters; The internal diameter of nozzle is 0.1～10 millimeter, and the flow velocity of photoresist is 0.01～10 milliliters/second, and the diameter of wafer is 100～300 millimeters; The diameter of gum spot is 5～40 millimeters, and the time of spraying photoresist is 10～300 seconds.
When the method for described even spraying photoresist, wafer were rotated with a constant speed, nozzle moved horizontally linear speed regulating; Nozzle is with than the edge of low velocity v1 near wafer, linear gradually the acceleration, the maximum v2 of speed when arriving crystal circle center, linear gradually again the deceleration, up to nozzle to leave the edge of wafer than low velocity v3.
The method of described even spraying photoresist, nozzle move horizontally speed v 2＞v3＞v1.
The method of described even spraying photoresist, nozzle be during with a constant level translational speed, wafer rotational angular velocity linear speed regulating; Nozzle is above edge of wafer the time, and fillet speed w1 is maximum; Afterwards, fillet speed diminishes from big linearity, and nozzle is above crystal circle center the time, and fillet speed w2 is minimum; Afterwards, fillet speed linear becomes big from little, and nozzle is above another edge of wafer the time, and fillet speed w1 be a maximum.
The method of described even spraying photoresist, wafer rotational angular velocity w1＞w2.
The method of described even spraying photoresist, when turntable angular velocity linear change, the speed that nozzle moves horizontally is linear change; Nozzle is above edge of wafer the time, and fillet speed w1 is maximum, speed v 1 minimum that nozzle moves horizontally; Afterwards, fillet speed diminishes from big linearity, and nozzle moves horizontally speed from little linear the increasing; Nozzle is above crystal circle center the time, and fillet speed w2 is minimum, speed v 2 maximums that nozzle moves horizontally; Afterwards, fillet speed is from little linear the change greatly, and nozzle moves horizontally from big linearity and diminishes; Nozzle is above another edge of wafer the time, and fillet speed w1 is maximum, speed v 1 minimum that nozzle moves horizontally.
The method of described even spraying photoresist, w1＞w2, v2＞v1.
Advantage of the present invention and beneficial effect are:
1, the present invention with the wafer of processing to be sprayed carry out centrifugal rotation, nozzle moves horizontally the sprinkling photoresist along the diameter wafer direction; The centrifugal rotational speed of wafer, nozzle move horizontally speed and carry out according to set technical recipe; This method can effectively guarantee in photoresist thickness and the photoetching gum spot center of seam crossing of each gum spot circle consistent; Satisfy the photoresist layer thickness evenness index request that constantly promotes, also can improve the production capacity of spray rubber moulding piece.
2, the present invention's wafer rotational angular velocity, nozzle that will influence spraying photoresist inhomogeneity technical data moves horizontally speed, and the requirement of explained hereafter is not only satisfied in the supporting enforcement in back of programming, and also makes spraying photoresist uniformity index promote.
3, the present invention rotates with nozzle through wafer and moves horizontally, and has realized the interaction of two main action components of spraying photoresist, and is useful greatly to improving wafer spraying photoresist production capacity.
Description of drawings
Fig. 1 is an action synoptic diagram of the present invention, adopts " coiled mosquito-repellent incense " shape gum spot track route spraying photoresist, sets up glue-line.
Fig. 2 is the action synoptic diagram of the embodiment of the invention 1, and when wafer rotated with a constant speed, nozzle moved horizontally linear speed regulating.
Fig. 3 is the action synoptic diagram of the embodiment of the invention 2, and nozzle is during with a constant level translational speed, wafer rotational angular velocity linear speed regulating.
Among the figure, 1 nozzle; 2 wafers; 3 gum spots.
Embodiment
Below in conjunction with accompanying drawing the present invention is done detailed description.
Implement general introduction:
As shown in Figure 1, the wafer 2 of processing to be sprayed is placed on the turntable, and nozzle 1 moves horizontally the sprinkling photoresist along the diameter wafer direction.The wafer 2 of processing to be sprayed carries out centrifugal rotation, nozzle 1 moves horizontally the sprinkling photoresist along wafer 2 diametric(al)s, and the sprinkling photoresist forms on wafer and is chain gum spot 3, and gum spot 3 tracks are " coiled mosquito-repellent incense " shape.Afterwards, it is air-dry that the wafer 2 of spray process has carried out high rotating speed, and high rotating speed is 100-400 rev/min.
Among the present invention, the speed of wafer 2 centrifugal rotations is 5-400 rev/min (being preferably 10-100 rev/min), and the speed that nozzle 1 moves horizontally along wafer 2 diametric(al)s is 2-40 mm/second (being preferably the 2-30 mm/second).
Among the present invention, the height of nozzle distance wafer is 5～50 millimeters, and the internal diameter of nozzle is 0.1～10 millimeter; The flow velocity of photoresist is 0.01～10 milliliters/second; The diameter of wafer is 100～300 millimeters, and the diameter of gum spot is 5～40 millimeters, and the time of spraying photoresist is 10～300 seconds.
Embodiment 1:
As shown in Figure 2, the wafer 2 of processing to be sprayed is placed on the turntable, and nozzle 1 moves horizontally the sprinkling photoresist along the diameter wafer direction.When wafer 2 rotated with a constant speed, nozzle 1 moved horizontally linear speed regulating.When wafer 2 rotates with a constant speed w; The speed that nozzle 1 moves horizontally changes; Nozzle 1 is so that (v2＞v1) near the edge of wafer, linearity is quickened gradually, the maximum v2 of speed when arriving crystal circle center than low velocity v1; Linear gradually again the deceleration, up to nozzle 1 with the edge that leaves wafer than low velocity v3 (v2＞v3).It is air-dry that the wafer 2 of spray process has carried out high rotating speed, and high rotating speed is 300 rev/mins.
In the present embodiment, wafer 2 velocity of rotation w are 50 rev/mins;
In the present embodiment, the v1 when nozzle 1 is moved horizontally to the edge of wafer 2 has been a spot speed, and linear then the acceleration reaches maximal value v2 when arriving wafer 2 centers, linear then the deceleration, and the speed of moving horizontally is reduced to v2 when arriving wafer 2 another edges.
In the present embodiment, v1=3 mm/second, v2=25 mm/second, v3=4 mm/second.
In the present embodiment, nozzle 1 is 10 millimeters apart from the height of wafer 2, and the internal diameter of nozzle 1 is 5 millimeters, and the flow velocity of photoresist is 3 milliliters/second, and the diameter of wafer 2 is 300 millimeters, and the diameter of gum spot 3 is 10 millimeters, and the time of spraying photoresist is 25 seconds.
Embodiment 2:
Be with embodiment 1 difference:
As shown in Figure 3, the wafer 2 of processing to be sprayed is placed on the turntable, and nozzle 1 moves horizontally the sprinkling photoresist along the diameter wafer direction.Nozzle 1 is during with a constant level translational speed, wafer 2 rotational angular velocity linear speed regulatings.When nozzle 1 with a constant speed v along diameter wafer direction level through wafer 2, nozzle 1 is above an edge of wafer 2 time, wafer 2 angular velocity w1 be maximum; Afterwards, wafer 2 angular velocity diminish from big linearity, and nozzle 1 is above wafer 2 centers the time, and wafer 2 angular velocity w2 are minimum; Afterwards, wafer 2 angular velocity linear become big from little, and nozzle 1 is above wafer 2 another edges the time, and wafer 2 angular velocity w1 be maximum (w1＞w2).It is air-dry that the wafer 2 of spray process has carried out high rotating speed, and high rotating speed is 300 rev/mins.
In the present embodiment, nozzle 1 speed of moving horizontally is 10 mm/second;
In the present embodiment, when above the edge of nozzle 1 at wafer 2, wafer 2 rotational angular velocities are w1; In nozzle 1 level in wafer 2 center moving process; Wafer 2 rotational angular velocities are when big linearity diminishes, and when arriving the center of wafer 2, wafer 2 rotational angular velocities are w2; When nozzle 1 level when wafer 2 another edges move, wafer 2 rotational angular velocities linear become big from little, when arriving another top, edge, wafer 2 rotational angular velocities are w1.
In the present embodiment, w1=30 rev/min, w2=10 rev/min;
In the present embodiment, nozzle 1 is 10 millimeters apart from the height of wafer 2, and the internal diameter of nozzle 1 is 6 millimeters, and the flow velocity of photoresist is 4 milliliters/second, and the diameter of wafer 2 is 300 millimeters, and the diameter of gum spot 3 is 15 millimeters, and the time of spraying photoresist is 30 seconds.
Embodiment 3:
In addition, when turntable angular velocity linear change, the speed that nozzle moves horizontally is linear change; Nozzle is above edge of wafer the time, and fillet speed w1 is maximum, speed v 1 minimum that nozzle moves horizontally; Afterwards, fillet speed diminishes from big linearity, and nozzle moves horizontally speed from little linear the increasing; Nozzle is above crystal circle center the time, and fillet speed w2 is minimum, and speed v 2 maximums that nozzle moves horizontally (w1＞w2, v2＞v1); Afterwards, fillet speed is from little linear the change greatly, and nozzle moves horizontally from big linearity and diminishes; Nozzle is above another edge of wafer the time, and fillet speed w1 is maximum, speed v 1 minimum that nozzle moves horizontally.It is air-dry that the wafer of spray process has carried out high rotating speed, and high rotating speed is 350 rev/mins.
In the present embodiment, nozzle moves horizontally speed: v1=3 mm/second, v2=25 mm/second;
In the present embodiment, fillet speed: w1=30 rev/min, w2=10 rev/min;
In the present embodiment, nozzle 1 is 10 millimeters apart from the height of wafer 2, and the internal diameter of nozzle 1 is 6 millimeters, and the flow velocity of photoresist is 4 milliliters/second, and the diameter of wafer 2 is 300 millimeters, and the diameter of gum spot 3 is 18 millimeters, and the time of spraying photoresist is 25 seconds.
The result shows; The present invention carries out centrifugal rotation, nozzle move horizontally the sprinkling photoresist along the diameter wafer direction method with the wafer of processing to be sprayed; Can effectively guarantee in photoresist thickness and the photoetching gum spot center of seam crossing of each gum spot circle consistent; Satisfy the photoresist layer thickness evenness index request that constantly promotes, also can improve the production capacity of spray rubber moulding piece.
Claims (5)
1. even method of spraying photoresist, it is characterized in that: when wafer rotated, nozzle moved horizontally the sprinkling photoresist along the diameter wafer direction; When wafer rotated with a constant speed W, nozzle moved horizontally linear speed regulating; Nozzle is with than the edge of low velocity v1 near wafer, linear gradually acceleration the, the maximum v2 of speed when arriving crystal circle center; Linear gradually again the deceleration, up to nozzle to leave the edge of wafer, v1=3 mm/second than low velocity v3; The v2=25 mm/second, v3=4 mm/second, W=50 rev/min.
2. even method of spraying photoresist, it is characterized in that: when wafer rotated, nozzle moved horizontally the sprinkling photoresist along the diameter wafer direction; Nozzle passes through wafer, wafer rotational angular velocity linear speed regulating with a constant speed V along diameter wafer direction level; Nozzle is above edge of wafer the time, and fillet speed w1 is maximum; Afterwards, fillet speed diminishes from big linearity, and nozzle is above crystal circle center the time, and fillet speed w2 is minimum; Afterwards, fillet speed linear becomes big from little, and nozzle is above another edge of wafer the time, and fillet speed w1 be a maximum, V=10 mm/second, w1=30 rev/min, w2=10 rev/min.
3. even method of spraying photoresist, it is characterized in that: when wafer rotated, nozzle moved horizontally the sprinkling photoresist along the diameter wafer direction; When turntable angular velocity linear change, the speed that nozzle moves horizontally is linear change; Nozzle is above edge of wafer the time, and fillet speed w1 is maximum, speed v 1 minimum that nozzle moves horizontally; Afterwards, fillet speed diminishes from big linearity, and nozzle moves horizontally speed from little linear the increasing; Nozzle is above crystal circle center the time, and fillet speed w2 is minimum, speed v 2 maximums that nozzle moves horizontally; Afterwards, fillet speed is from little linear the change greatly, and nozzle moves horizontally from big linearity and diminishes; Nozzle is above another edge of wafer the time, and fillet speed w1 is maximum, speed v 1 minimum that nozzle moves horizontally, and the v1=3 mm/second, the v2=25 mm/second, w1=30 rev/min, w2=10 changes a part clock.
4. according to the method for claim 1,2, one of 3 described even spraying photoresists; It is characterized in that: the wafer of processing to be sprayed carries out centrifugal rotation, nozzle moves horizontally the sprinkling photoresist along the diameter wafer direction; The sprinkling photoresist forms on wafer and is the chain gum spot, and the gum spot track is " coiled mosquito-repellent incense " shape; Afterwards, it is air-dry that the wafer of spray process has carried out high rotating speed, and high rotating speed is 100-400 rev/min.
5. according to the method for claim 1,2, one of 3 described even spraying photoresists; It is characterized in that: the height of nozzle distance wafer is 5～50 millimeters; The internal diameter of nozzle is 0.1～10 millimeter, and the flow velocity of photoresist is 0.01～10 milliliters/second, and the diameter of wafer is 100～300 millimeters; The diameter of gum spot is 5～40 millimeters, and the time of spraying photoresist is 10～300 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010524828A CN102043340B (en) | 2010-10-29 | 2010-10-29 | Method for uniformly spraying photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010524828A CN102043340B (en) | 2010-10-29 | 2010-10-29 | Method for uniformly spraying photoresist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102043340A CN102043340A (en) | 2011-05-04 |
| CN102043340B true CN102043340B (en) | 2012-10-03 |
Family
ID=43909598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010524828A Active CN102043340B (en) | 2010-10-29 | 2010-10-29 | Method for uniformly spraying photoresist |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102043340B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102360164A (en) * | 2011-09-28 | 2012-02-22 | 上海宏力半导体制造有限公司 | Method for spraying photoresist |
| CN104377153B (en) * | 2014-11-18 | 2018-07-17 | 通富微电子股份有限公司 | A kind of Wafer cleaning machine and its nozzle moving method, disk moving method |
| CN107885035A (en) * | 2016-09-30 | 2018-04-06 | 苏州能讯高能半导体有限公司 | A kind of coating technique of photoresist |
| CN112439582A (en) * | 2019-08-30 | 2021-03-05 | 长鑫存储技术有限公司 | Spraying device, semiconductor processing equipment and method for spraying reactants |
| DE102020126216A1 (en) * | 2020-04-29 | 2021-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and device for coating a substrate with photoresist |
| CN111505906B (en) * | 2020-06-10 | 2023-09-05 | 沈阳芯源微电子设备股份有限公司 | Gluing method |
| CN111604236B (en) * | 2020-06-11 | 2022-07-08 | 沈阳芯源微电子设备股份有限公司 | Glue coating method for ultrathin wafer with taiko ring structure as substrate |
| CN111905988B (en) * | 2020-08-14 | 2022-10-04 | 中国科学院微电子研究所 | Gluing method of photoresist |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5532192A (en) * | 1993-09-08 | 1996-07-02 | At&T Corp. | Method of spiral resist deposition |
| CN1206933A (en) * | 1997-07-25 | 1999-02-03 | 三星电子株式会社 | Apparatus and method for spraying photoresist |
| CN1324106A (en) * | 2000-04-27 | 2001-11-28 | 株式会社东芝 | Method for making mask, semiconductor device and its mfg. method, method for mfg. recording medium |
| US6626996B1 (en) * | 2000-03-14 | 2003-09-30 | Pizza Hut, Inc. | Pizza sauce dispensing devices and methods |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3257369B2 (en) * | 1995-09-20 | 2002-02-18 | 松下電器産業株式会社 | Film forming method and film forming apparatus |
-
2010
- 2010-10-29 CN CN201010524828A patent/CN102043340B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5532192A (en) * | 1993-09-08 | 1996-07-02 | At&T Corp. | Method of spiral resist deposition |
| CN1206933A (en) * | 1997-07-25 | 1999-02-03 | 三星电子株式会社 | Apparatus and method for spraying photoresist |
| US6626996B1 (en) * | 2000-03-14 | 2003-09-30 | Pizza Hut, Inc. | Pizza sauce dispensing devices and methods |
| CN1324106A (en) * | 2000-04-27 | 2001-11-28 | 株式会社东芝 | Method for making mask, semiconductor device and its mfg. method, method for mfg. recording medium |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平9-75826A 1997.03.25 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102043340A (en) | 2011-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102043340B (en) | Method for uniformly spraying photoresist | |
| CN207401632U (en) | A kind of adjustable non-full circle cambered surface automatic spray apparatus of sprinkler height | |
| US20160027637A1 (en) | Apparatus and methods for manufacturing semiconductor devices and treating substrates | |
| CN105413905A (en) | Two-phase-flow atomized-spray washing device and two-phase-flow atomized-spray washing method | |
| CN106835028A (en) | A kind of vapor deposition source, evaporation coating device and evaporation coating method | |
| CN101791604A (en) | Device and method for spraying liquid material film based on ultrasonic vibration table | |
| US20150151311A1 (en) | Spin coating apparatus and spin coating method | |
| CN102360164A (en) | Method for spraying photoresist | |
| CN102148131A (en) | Wafer cleaning method and cleaning device | |
| CN101954322A (en) | Speed-variable supersonic flame spraying spherical device | |
| JP2009061516A (en) | Method and apparatus for grinding | |
| CN104646248A (en) | Method and device for preparing thin film materials by spin-coating method | |
| CN208705657U (en) | Scan-type photoresist coating system | |
| CN109414721A (en) | Coating method | |
| CN105436056A (en) | Rotary gluing method for semiconductor chip | |
| JP6158737B2 (en) | Substrate processing apparatus and substrate processing method | |
| CN112750684B (en) | Wafer cleaning method | |
| TWI453797B (en) | Method to attain uniformity of the thickness of photoresist applied on wafers | |
| CN203778253U (en) | coating device for substrate side | |
| CN106583186A (en) | Double-nozzle triangle glue-spraying method | |
| CN111672720B (en) | Spraying method | |
| CN203561823U (en) | Gluing machine chamber | |
| CN102024687B (en) | Method for improving gluing capacity | |
| JP2010192619A (en) | Method of coating sensitization liquid | |
| CN203437361U (en) | Washing device of upper cover of gelatinizing development machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 110168 No. 16 Feiyun Road, Hunnan District, Shenyang City, Liaoning Province Patentee after: Shenyang Core Source Microelectronic Equipment Co., Ltd. Address before: 110168 No. 16 Feiyun Road, Hunnan New District, Shenyang City, Liaoning Province Patentee before: Shenyang Siayuan Electronic Equipment Co., Ltd. |