CN102360164A - Method for spraying photoresist - Google Patents
Method for spraying photoresist Download PDFInfo
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- CN102360164A CN102360164A CN2011102985080A CN201110298508A CN102360164A CN 102360164 A CN102360164 A CN 102360164A CN 2011102985080 A CN2011102985080 A CN 2011102985080A CN 201110298508 A CN201110298508 A CN 201110298508A CN 102360164 A CN102360164 A CN 102360164A
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Abstract
The invention provides a method for spraying photoresist. The method is characterized by comprising the following steps: providing a wafer to be sprayed; providing a nozzle used for spraying the photoresist on the surface of the wafer; and horizontally moving the nozzle along the radius direction of the wafer and spraying the photoresist, wherein the nozzle is horizontally moved above the central position of the wafer from the position above the initial position of the wafer edge. The method has the following technical effect: the photoresist-dripping nozzle is horizontally moved along the radius direction of the wafer and sprays photoresist and the rotation speed of the wafer and the horizontal movement speed of the nozzle are executed according to the set technological parameters, thus solving the problem that the patterns on the wafer are not completely filled during photoresist spraying.
Description
Technical field
The present invention relates to integrated circuit and make manufacture field, particularly a kind of method that on Semiconductor substrate, evenly sprays photoresist.
Background technology
Usually, when making semiconductor devices, the homogeneity of photoresist is very crucial mass parameter on the Semiconductor substrate.If said photoresist not by even coating, then can cause differentiating problems such as rate variance in subsequent technique, thereby directly influences lithographic results.
The method that is used for evenly applying photoresist comprises spin coating (Spin Coating) method; Spin-coating method is on the disc supporter, to place wafer; And after said wafer center drippage photoresist, make the substrate rotation, thereby under action of centrifugal force, make photoresist tiling crystal column surface.
In the prior art, adopt two kinds of gluing modes usually, static gluing and dynamic gluing.Wherein, static gluing is meant that photoresist is dropped in silicon chip central authorities when silicon chip is static, and behind the static glue, silicon chip is low speed rotation at first, and photoresist is evenly spread out, in case photoresist arrives silicon chip edge, rotating speed is accelerated to the velocity of rotation of setting.Another kind method, dynamically gluing is to drip glue when rotating (for example 100-200rpm) at a slow speed at silicon chip, this is in order evenly to cover silicon chip, to accelerate to the rotating speed of setting then.Like publication number is the one Chinese patent application of CN1206933A, and it discloses photoresist through being fixed on the nozzle ejection of wafer top one ad-hoc location, and wafer is installed on the rotary fixture and with a rated speed and rotates.
No matter which kind of above-mentioned gluing mode, dripping the glue nozzle all is the center position spray glue that is fixed in wafer, with centrifugal force tiling crystal column surface.Jet-coating photoresit method synoptic diagram as shown in Figure 1.Yet along with the production technology progress, the photoresist uniformity index needs further to improve, and supporting jet-coating photoresit technical data needs refinement more.Especially for the large scale wafer, the method for existing fixed nozzle spraying photoresist can not satisfy the demand of even coating photoresist fully.
Summary of the invention
The present invention is directed to the deficiency that prior art exists, a kind of method that sprays photoresist is provided, be prone to the problem that figure is not exclusively filled when solving the jet-coating photoresit that exists in the prior art.
For solving the problems of the technologies described above, the embodiment of the invention provides a kind of method that sprays photoresist, comprising:
The wafer of processing to be sprayed is provided;
Nozzle is provided, is used for photoresist is sprayed at said crystal column surface;
Nozzle is moved horizontally and sprays photoresist along the wafer radius direction, and said nozzle moves to the top, center of wafer from the reference position upper horizontal of crystal round fringes.
Optional; The reference position of said crystal round fringes is that said R is a wafer radius apart from arbitrary position in zone between the circumference
to
.
Optional, move to above the center of wafer from the reference position upper horizontal of crystal round fringes at nozzle after, wafer accelerates to be set velocity of rotation and rotates, to the photoresist whirl coating of spraying.
Optional, the setting velocity of rotation of said wafer is 1500-4000 rev/min.
Optional, said nozzle is hovering the schedule time above the reference position of crystal round fringes with above the center of wafer.
Optional, the said schedule time of hovering is 0.5s～1s.
Optional, said nozzle moves horizontally in the process along the wafer radius direction, and wafer rotates.
Optional, said nozzle moves horizontally along the wafer radius direction with constant speed, and wafer rotates with constant rotation speed.
Optional, said nozzle is the 30-100 mm/second along the speed of moving horizontally of radial direction.
Optional, the constant rotation speed of said wafer is 500-1000 rev/min.
Optional, said nozzle moves horizontally along the wafer radius direction with constant speed, and said nozzle is above the reference position of crystal round fringes the time, and the initial rotation speed of wafer is r1; Afterwards, wafer accelerates to r2, and rotates with constant rotational speed r2; When said nozzle moved to the top, center of wafer, wafer was decelerated to and stops velocity of rotation r3, and said termination velocity of rotation r3 is less than r2, and said r1 is less than r2.
Optional, the velocity of rotation r1 of said wafer, r2, r3 are 500-1000 rev/min, the initial rotation speed r1＜r2 of said wafer, the termination velocity of rotation r3＜r2 of said wafer.
Optional, the height of said nozzle distance wafer is 4mm-8mm, and the internal diameter of said nozzle is 0.5mm-4mm, and the flow velocity of said photoresist is 1ml/s-2ml/s.
Compared with prior art, the present invention has following technique effect:
1, the present invention moves horizontally and sprays photoresist along the wafer radius direction through dripping the glue nozzle; The speed that moves horizontally of the velocity of rotation of wafer and nozzle is carried out according to set technological parameter; The problem that figure (groove, hole etc.) is not exclusively filled on the wafer when having solved jet-coating photoresit, thus the homogeneity of jet-coating photoresit on the wafer guaranteed.
2, the present invention sprays the method for photoresist, and the mobile route of nozzle only need be from the top, center of reference position to the wafer of crystal round fringes, and mobile route is short, has saved the time of spraying photoresist, is particularly useful for large-sized wafer.
3, the present invention sprays the method for photoresist; Make nozzle spray photoresist above when reference position and final position, hovering over wafer; Then move horizontally to final position from reference position in other positions with constant speed; So both guarantee the complete filling of crystal round fringes place photoresist, avoided the waste of edge photoresist again, improved the utilization factor of photoresist.
4, the present invention dynamically adjusts through the velocity of rotation to wafer, can tackle the different size figure flexibly, further improves the homogeneity that photoresist applies, and especially is fit to large-sized wafer.
Description of drawings
Fig. 1 is a jet-coating photoresit method synoptic diagram in the prior art;
Fig. 2 is the schematic flow sheet that the present invention sprays the photoresist method;
Fig. 3 is the synoptic diagram of the spraying photoresist method of embodiment of the present invention;
Fig. 4 is that the synoptic diagram that the glue nozzle is positioned at the crystal round fringes reference position is dripped in the present invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth detail in the following description so that make much of the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention does not receive the restriction of following disclosed embodiment.
The inventor finds through long-term practice, in the process of spraying photoresist, because often there is the uneven situation of coating in the influence of factors such as the velocity of rotation of every bit, centrifugal force, surface tension on the wafer on the wafer.
In fact; Under the microstate, the wafer of photoresist to be sprayed generally is that the surface has figure, particularly for the wafer with the very dark figure of vertical wide ratio; If still adopt and drip the technology that the glue nozzle is fixed in the center position sprinkling photoresist of wafer in the prior art; So, be sprayed onto the groove (trench) of crystal round fringes place figure, the photoresist in hole (hole), also do not reach this groove of complete filling, hole; Just possibly the photoresist in this groove, the hole thrown out, cause not exclusively filling the phenomenon of photoresist because of follow-up high speed rotating whirl coating.For large-sized wafer, the phenomenon of this incomplete filling is especially outstanding.
In order to solve the problems of the technologies described above, the embodiment of the invention provides a kind of method that sprays photoresist, and is as shown in Figure 2, comprising:
Step S1 provides the wafer of processing to be sprayed;
Step S2 provides nozzle, is used for photoresist is sprayed at said crystal column surface;
Step S3 moves horizontally nozzle and spray photoresist along the wafer radius direction, and said nozzle moves to the top, center of wafer from the reference position upper horizontal of crystal round fringes.
The present invention is dripped a glue nozzle through dynamic control, make drip the glue nozzle along the wafer radius direction from reference position on direction final position top move and spray photoresist.Wherein, reference position is the position near crystal round fringes, and final position is the center of wafer.
Below, in conjunction with accompanying drawing embodiment of the present invention is elaborated.
Referring to Fig. 3 and Fig. 4, the wafer 1 of processing to be sprayed is placed on the turntable, and wherein this wafer radius is R, and the crystal circle center position is O.Drip glue nozzle 2 and move horizontally the sprinkling photoresist, at this moment, drip the glue nozzle and move horizontally with a constant speed v along the wafer radius direction.
Said nozzle moves horizontally the sprinkling photoresist along the wafer radius direction, is meant that nozzle moves to the top of the center O of wafer from the reference position upper horizontal of crystal round fringes.Because the present invention is dripped the glue nozzle and is moved horizontally the sprinkling photoresist along radial direction, therefore drip the glue nozzle and only need move the distance of wafer radius R nearly, just accomplished the coating of crystal column surface photoresist.Be fixed in the wafer top with respect to nozzle and spray photoresist, especially large scale wafer, the present invention has saved the time of spraying photoresist, has improved production efficiency.
The reference position of said glue nozzle is positioned at the top near crystal round fringes one position; In the present embodiment; Said near crystal round fringes one position refer to apart from the wafer circumference approximately
to arbitrary position in zone between
approximately, wherein R is the wafer circumference.As shown in Figure 4; Position A locates apart from circumference about
on the wafer radius; Position B be on the wafer radius apart from circumference approximately
locate arbitrary position in the said annular section that refers to position A to B near crystal round fringes one position.The final position of said glue nozzle is positioned at the top of the O of crystal circle center.
Said nozzle is at reference position and the final position certain hour that all will hover; Promptly; Nozzle in spraying the process of photoresist, above the reference position of crystal round fringes with the center of wafer above the certain hour that hovers, between reference position and final position, then move horizontally with constant speed.
Selection in conjunction with above-mentioned glue nozzle mobile route; The present invention sprays the method for photoresist; Make nozzle when reference position and final position, hover over above the wafer and spray photoresist, then move horizontally to final position from reference position, so both guaranteed the complete filling of crystal round fringes place figure photoresist with constant speed in other positions; Avoid the waste of edge photoresist again, improved the utilization factor of photoresist.
Below will provide two specific embodiments to further specify the method that the present invention sprays photoresist, wherein, when wafer rotated, when said nozzle moved horizontally the sprinkling photoresist along the wafer radius direction, the velocity of rotation of wafer was r.Certainly, those skilled in the art should understand, and when nozzle moved horizontally along radial direction, the rotating manner of wafer was not in order to limit the present invention.
Embodiment 1:
Drip the glue nozzle with a constant speed v from reference position when the wafer radius direction moves horizontally, the velocity of rotation r of wafer remains unchanged.Wherein nozzle hovers the schedule time with end position initial, and other times move horizontally with constant speed v.
In the present embodiment, drip the glue nozzle from the annular section of the A to B of wafer arbitrary position directly over move horizontally along radial direction, stop to the top of the position O of crystal circle center, this moment, the velocity of rotation of wafer was r.In the process of above-mentioned mobile route spraying photoresist; Nozzle at first hovers the schedule time in reference position; Move horizontally along radial direction with constant speed v then, hover the schedule time during to the position O of crystal circle center top again, the process of whole spraying photoresist (gluing) finishes.At this moment, the photoresist of spraying covers whole crystal column surface.
Afterwards, the velocity of rotation of wafer is set velocity of rotation s by the instantaneous whirl coating that accelerates to, and on wafer, obtains uniform photoresist glued membrane overlayer, and gets rid of unnecessary photoresist.
In the present embodiment, dripping the glue nozzle is 0.5s-1s in the schedule time of hovering of reference position and final position.
In the present embodiment, the speed of moving horizontally of dripping the glue nozzle is the 30-100 mm/second.
In the present embodiment, the velocity of rotation r of wafer is 500-1000 rev/min.
In the present embodiment, it is 1500-4000 rev/min that the whirl coating of wafer is set velocity of rotation s.
In the present embodiment, the height that drips glue nozzle distance wafer is 4mm-8mm, and the internal diameter of nozzle is 0.5mm-4mm, and the flow velocity of photoresist is 1ml/s-2ml/s, and the time of spraying photoresist is 30s-40s.
The present invention especially is fit to the large scale wafer, for example is 8 cun, 12 cun, or even large scale more, for example is 20 cun large scale wafer.This enforcement is example with 8 cun wafers; Be that diameter is that the wafer of 200mm is an example; These 8 cun wafers are sprayed the operation of photoresist, and preferred, the speed of moving horizontally of dripping the glue nozzle is: 50 mm/second; The velocity of rotation r of wafer is 1000 rev/mins, and it is 1500 rev/mins that the whirl coating of wafer is set velocity of rotation s.
Embodiment 2:
Be with embodiment 1 difference, dripping when a glue nozzle moves horizontally that the velocity of rotation of wafer can dynamically be adjusted according to formed dimension of picture on the size of wafer and the wafer.
Said nozzle moves horizontally with constant speed, and said nozzle is above the reference position of crystal round fringes the time, and the initial rotation speed of wafer is r1; Afterwards, wafer accelerates to r2, and rotates with constant rotational speed r2; When said nozzle is moved horizontally to center when top of wafer along the wafer radius direction, wafer is decelerated to and stops velocity of rotation r3.
When drip the glue nozzle with a constant speed v from reference position when the wafer radius direction moves horizontally; In the present embodiment; Drip the glue nozzle from the annular section of the A to B of wafer arbitrary position directly over move horizontally along radial direction, stop to the top of the position O of crystal circle center.
Nozzle is in the process of above-mentioned mobile route spraying photoresist, and nozzle at first hovers the schedule time above reference position, and this moment, the initial rotation speed of wafer was r1; After the nozzle reference position was hovered, the instantaneous speedup of the velocity of rotation of wafer moved horizontally along with dripping the glue nozzle to r2; Arrive after the crystal circle center position; The velocity of rotation of wafer reduces again, and this moment, the termination velocity of rotation of wafer was r3, and nozzle hovers the schedule time at final position then.
Through after the above-mentioned steps, drip the glue nozzle is moved horizontally to wafer from the edge of wafer top, center, the process of whole spraying photoresist (gluing) finishes, the photoresist tiling crystal column surface of spraying this moment.
Afterwards, wafer is set velocity of rotation s by stopping the instantaneous whirl coating that accelerates to of velocity of rotation r3, on wafer, obtains uniform photoresist glued membrane overlayer, and gets rid of unnecessary photoresist.
The setting of above-mentioned wafer velocity of rotation r1, r2, r3; Be dynamically to adjust according to formed dimension of picture on the size of wafer and the wafer; Make the termination velocity of rotation r3 of initial rotation speed r1 and wafer of wafer lower with respect to r2; The rotating speed r2 that is wafer is maximum, and the initial rotation speed r1 of said wafer is less than r2, and the termination velocity of rotation r3 of said wafer is less than r2.And, have the wafer of indulging the very dark figure of wide ratio for the edge, can make the relative r2 of initial rotation speed r1 lower, can obtain the photoresist filling effect in better crystal round fringes figure (groove, hole) like this.
In the present embodiment, dripping the glue nozzle is 0.5s～1s in the schedule time of hovering of reference position and final position.Nozzle hovers above the wafer reference position after 0.5s～1s, and wafer accelerates to r2 by initial rotation speed r1.
In the present embodiment, the speed of moving horizontally of dripping the glue nozzle is the 30-100 mm/second.
In the present embodiment, the velocity of rotation r1 of said wafer, r2, r3 are 500-1000 rev/min.
In the present embodiment, it is 1500-4000 rev/min that the whirl coating of wafer is set velocity of rotation s.
In the present embodiment, the height that drips glue nozzle distance wafer is 4-8mm, and the internal diameter of nozzle is 0.5-4mm, and the flow velocity of photoresist is 1-2ml/s, and the diameter of wafer is 200mm, and the time of spraying photoresist is 30-40s.
The present invention especially is fit to the large scale wafer, for example is 8 cun, 12 cun, or even large scale more, for example is 20 cun large scale wafer.This enforcement is example with 8 cun wafers, and preferred, the initial rotation speed r1 of wafer is 600 rev/mins, and the velocity of rotation r2 of wafer is 1000 rev/mins, and the termination velocity of rotation r3 of wafer is 800 rev/mins.
The present invention dynamically adjusts through the velocity of rotation to wafer, can tackle the different size figure flexibly, further improves the uniformity coefficient that photoresist applies, and especially is fit to large-sized wafer.And the mobile route that drips the glue nozzle is short, only is about the distance of wafer radius R, like this, can practice thrift the time of spraying photoresist, and practices thrift the photoresist material.
The process that above embodiment provided is the preferred implementation that provides with present main flow semiconductor crystal wafer production line, is not in order to limit the present invention.Those skilled in the art are scrutable to be, can use material different, technological parameter to realize the present invention according to the needs of different production lines.
Adopt the said method of the embodiment of the invention; When spraying photoresist; Move to crystal circle center from the marginal position of wafer through dripping the glue nozzle; Can effectively guarantee to be positioned at crystal round fringes place figure (like groove, hole etc.) and obtain sufficient photoresist filling, solve the photoresist that exists in the prior art and filled incomplete problem.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of technical scheme of the present invention according to technical spirit of the present invention.
Claims (13)
1. spray the method for photoresist, it is characterized in that:
The wafer of processing to be sprayed is provided;
Nozzle is provided, is used for photoresist is sprayed at said crystal column surface;
Nozzle is moved horizontally and sprays photoresist along the wafer radius direction, and said nozzle moves to the top, center of wafer from the reference position upper horizontal of crystal round fringes.
2. the method for spraying photoresist as claimed in claim 1; It is characterized in that; The reference position of said crystal round fringes is that said R is a wafer radius apart from arbitrary position in zone between the circumference
to
.
3. the method for spraying photoresist as claimed in claim 1 is characterized in that, move to above the center of wafer from the reference position upper horizontal of crystal round fringes at nozzle after, wafer accelerates to be set velocity of rotation and rotates, to the photoresist whirl coating of spraying.
4. the method for spraying photoresist as claimed in claim 3 is characterized in that, the setting velocity of rotation of said wafer is 1500-4000 rev/min.
5. the method for spraying photoresist as claimed in claim 1 is characterized in that, said nozzle is hovering the schedule time above the reference position of crystal round fringes with above the center of wafer.
6. the method for spraying photoresist as claimed in claim 5 is characterized in that, the said schedule time of hovering is 0.5s～1s.
7. like the method for each described spraying photoresist in the claim 1～6, it is characterized in that said nozzle moves horizontally in the process along the wafer radius direction, wafer rotates.
8. the method for spraying photoresist as claimed in claim 7 is characterized in that, said nozzle moves horizontally along radial direction with constant speed, and wafer rotates with constant rotation speed.
9. the method for spraying photoresist as claimed in claim 8 is characterized in that, said nozzle is the 30-100 mm/second along the speed of moving horizontally of radial direction.
10. the method for spraying photoresist as claimed in claim 8 is characterized in that, the constant rotation speed of said wafer is 500-1000 rev/min.
11. the method like each described spraying photoresist of claim 1-6 is characterized in that, said nozzle moves horizontally along radial direction with constant speed, and said nozzle is above the reference position of crystal round fringes the time, and the initial rotation speed of wafer is r1; Afterwards, wafer accelerates to r2, and rotates with constant rotational speed r2; When said nozzle moved to the top, center of wafer, wafer was decelerated to and stops velocity of rotation r3, and said termination velocity of rotation r3 is less than r2, and said r1 is less than r2.
12. the method for spraying photoresist as claimed in claim 11 is characterized in that, the velocity of rotation r1 of said wafer, r2, r3 are 500-1000 rev/min.
13. the method for spraying photoresist as claimed in claim 1 is characterized in that, the height of said nozzle distance wafer is 4mm-8mm, and the internal diameter of said nozzle is 0.5mm-4mm, and the flow velocity of said photoresist is 1ml/s-2ml/s.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102985080A CN102360164A (en) | 2011-09-28 | 2011-09-28 | Method for spraying photoresist |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102985080A CN102360164A (en) | 2011-09-28 | 2011-09-28 | Method for spraying photoresist |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104517864A (en) * | 2013-10-08 | 2015-04-15 | 精材科技股份有限公司 | Manufacturing method of wafer level chip package |
| CN104826781A (en) * | 2014-02-11 | 2015-08-12 | 无锡华润上华半导体有限公司 | Wafer gluing method |
| CN106346354A (en) * | 2015-07-16 | 2017-01-25 | 盛美半导体设备（上海）有限公司 | Wafer rotating chuck optimized on basis of cathode spray head position change |
| CN107885035A (en) * | 2016-09-30 | 2018-04-06 | 苏州能讯高能半导体有限公司 | A kind of coating technique of photoresist |
| CN111505906A (en) * | 2020-06-10 | 2020-08-07 | 沈阳芯源微电子设备股份有限公司 | Gluing method |
| CN111672720A (en) * | 2020-06-29 | 2020-09-18 | 沈阳芯源微电子设备股份有限公司 | Spraying method |
| CN111905989A (en) * | 2020-08-14 | 2020-11-10 | 中国科学院微电子研究所 | Gluing method of high-viscosity photoresist |
| CN111905988A (en) * | 2020-08-14 | 2020-11-10 | 中国科学院微电子研究所 | Photoresist coating method |
| CN114967346A (en) * | 2021-02-24 | 2022-08-30 | 中国科学院微电子研究所 | Photoresist coating method |
| CN115770709A (en) * | 2021-09-01 | 2023-03-10 | 上海中欣晶圆半导体科技有限公司 | Method for improving flatness by silicon wafer positioning sectional type waxing rotation speed |
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| CN1206933A (en) * | 1997-07-25 | 1999-02-03 | 三星电子株式会社 | Apparatus and method for spraying photoresist |
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| CN1206933A (en) * | 1997-07-25 | 1999-02-03 | 三星电子株式会社 | Apparatus and method for spraying photoresist |
| CN1206850A (en) * | 1997-07-30 | 1999-02-03 | 世界先进积体电路股份有限公司 | Streak-free coating method for high viscosity photoresist coatings |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104517864A (en) * | 2013-10-08 | 2015-04-15 | 精材科技股份有限公司 | Manufacturing method of wafer level chip package |
| CN104826781A (en) * | 2014-02-11 | 2015-08-12 | 无锡华润上华半导体有限公司 | Wafer gluing method |
| CN104826781B (en) * | 2014-02-11 | 2017-02-08 | 无锡华润上华半导体有限公司 | Wafer gluing method |
| CN106346354A (en) * | 2015-07-16 | 2017-01-25 | 盛美半导体设备（上海）有限公司 | Wafer rotating chuck optimized on basis of cathode spray head position change |
| CN107885035A (en) * | 2016-09-30 | 2018-04-06 | 苏州能讯高能半导体有限公司 | A kind of coating technique of photoresist |
| CN111505906B (en) * | 2020-06-10 | 2023-09-05 | 沈阳芯源微电子设备股份有限公司 | Gluing method |
| CN111505906A (en) * | 2020-06-10 | 2020-08-07 | 沈阳芯源微电子设备股份有限公司 | Gluing method |
| CN111672720A (en) * | 2020-06-29 | 2020-09-18 | 沈阳芯源微电子设备股份有限公司 | Spraying method |
| CN111672720B (en) * | 2020-06-29 | 2022-09-06 | 沈阳芯源微电子设备股份有限公司 | Spraying method |
| CN111905988A (en) * | 2020-08-14 | 2020-11-10 | 中国科学院微电子研究所 | Photoresist coating method |
| CN111905988B (en) * | 2020-08-14 | 2022-10-04 | 中国科学院微电子研究所 | Gluing method of photoresist |
| CN111905989A (en) * | 2020-08-14 | 2020-11-10 | 中国科学院微电子研究所 | Gluing method of high-viscosity photoresist |
| CN114967346A (en) * | 2021-02-24 | 2022-08-30 | 中国科学院微电子研究所 | Photoresist coating method |
| CN115770709A (en) * | 2021-09-01 | 2023-03-10 | 上海中欣晶圆半导体科技有限公司 | Method for improving flatness by silicon wafer positioning sectional type waxing rotation speed |
| CN115770709B (en) * | 2021-09-01 | 2023-08-08 | 上海中欣晶圆半导体科技有限公司 | Method for improving flatness by silicon wafer positioning sectional type waxing rotating speed |
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