CN102025340A - Sonic wave resonator and processing method thereof - Google Patents
Sonic wave resonator and processing method thereof Download PDFInfo
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- CN102025340A CN102025340A CN2010105135596A CN201010513559A CN102025340A CN 102025340 A CN102025340 A CN 102025340A CN 2010105135596 A CN2010105135596 A CN 2010105135596A CN 201010513559 A CN201010513559 A CN 201010513559A CN 102025340 A CN102025340 A CN 102025340A
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Abstract
一种声波谐振器及其加工方法，声波谐振器包括：具有空气腔的基底；在基底上形成的第一钝化层，且位于空气腔上方；在第一钝化层上形成的种子层，第一钝化层阻止种子层与谐振器周围环境相互作用；在种子层上形成的多层结构；以及在多层结构上表面形成的第二钝化层。方法包括如下步骤：提供带有牺牲层的基底；在牺牲层上形成第一钝化层并延伸至整个基底；在第一钝化层上形成种子层；在种子层上形成多层结构；在多层结构上表面形成第二钝化层；以及将牺牲层从基底移除以形成空气腔。本发明可以减弱材料在谐振器表面的吸附，消除或减轻由于周围空气或潮湿环境影响而产生的谐振器频率偏移，很大程度上放松了对谐振器密闭封装的要求，极大的降低了器件制造成本。
An acoustic wave resonator and a processing method thereof, the acoustic wave resonator comprising: a substrate having an air cavity; a first passivation layer formed on the substrate and located above the air cavity; a seed layer formed on the first passivation layer, A first passivation layer prevents the seed layer from interacting with the surrounding environment of the resonator; a multilayer structure formed on the seed layer; and a second passivation layer formed on the upper surface of the multilayer structure. The method includes the following steps: providing a substrate with a sacrificial layer; forming a first passivation layer on the sacrificial layer and extending to the entire substrate; forming a seed layer on the first passivation layer; forming a multilayer structure on the seed layer; forming a second passivation layer on the upper surface of the multilayer structure; and removing the sacrificial layer from the substrate to form an air cavity. The invention can weaken the adsorption of materials on the surface of the resonator, eliminate or reduce the frequency shift of the resonator due to the influence of the surrounding air or humid environment, greatly relax the requirements for the hermetic package of the resonator, and greatly reduce the Device manufacturing cost.
Description
Technical field
The present invention relates to a kind of acoustic resonator.Particularly relate to a kind of acoustic resonator and processing method thereof with one or more layers passivation layer structure.
Background technology
The simple structure of film bulk acoustic (BAW) resonator is made up of relative plate electrode and the piezoelectric that is clipped in therebetween.Under condition of work, can cause in piezoelectric layer producing time dependent electric field applying voltage on the electrode.Electric field is causing organizator sound wave on the piezoelectric layer direction of vibration, and then forms resonance.Sound wave is propagated along direction of an electric field, reflects at electrode edge then.Processing bulk wave (BAW) resonator is normally at upper surface of substrate deposited bottom electrode successively, piezoelectric layer and top electrodes.Therefore, top electrodes and air dielectric have a common boundary, and bottom electrode is located in the substrate, so intersection need be done some specific designs.Carry out mechanical resonant in order to make bulk wave (BAW) the resonator response two interelectrode signals of telecommunication, have two kinds of known solutions to realize this re-set target at the bottom intersection, the fundamental difference point of these two kinds of methods is to preserve the method difference of acoustic energy.First kind of scheme is to hang resonator film (hereinafter referred to as " FBAR ") is arranged on the air chamber of substrate inside.A kind of method is the back-etching base material from substrate.If base material is a silicon, a part of base material of resonant cavity below is removed by back side bulk silicon etching technology.Usually, back side bulk silicon etching technology can for example KOH, TMAH and EDP realize by using deep trench ionic reaction etching or using the etching that relies on crystallographic direction.In another kind of structure, device architecture is suspended in above the shallow chamber of substrate top or inside.Usually, can deposit the formation sacrifice layer, form the acoustic resonance layer then in the above.At the last of the course of processing or in the step, can remove sacrificial layer material.Second kind of scheme provides a suitable acoustic reflecting layer and replaces above-described air/material layer junction, this resonator (being commonly referred to " SMR ") bottom is made of alternately high and low acoustic impedance material, and acoustic energy can be controlled effectively in the piezoelectric resonator chamber.Additional acoustic reflecting layer can reduce the effective coupling coefficient of SMR, and can produce extra acoustical energy losses mechanism and cause the total Q value of SMR poor than FBAR.
Because packaging cost can be dominated total manufacturing cost, be its key factor of on the consumption market, succeeing so improve the packaging cost benefit of FBAR and SMR device.Owing to there is not the bottom air chamber, the passivation of SMR and relevant encapsulation thereof are simpler than the cavity type FBAR that requires enclosed package.Non-enclosed package method cost is lower, but needs fabulous passivation resonator to make it not be subjected to infection under wet environment.
Therefore, above-mentioned many defectives and deficiency need be well solved.
Summary of the invention
Technical problem to be solved by this invention is, a kind of acoustic resonator and processing method thereof are provided, acoustic resonator is the FBAR resonator structure, adopt the FBAR of this structure to eliminate or alleviate because surrounding air or wet environment influence the frequency shift (FS) that produces, and loosen the requirement of enclosed package to a great extent, keep good electromechanical coupling factor of resonator and quality factor unaffected simultaneously.
The technical solution adopted in the present invention is: a kind of acoustic resonator comprises:
(a) has the substrate of air chamber;
(b) first passivation layer that in substrate, forms, and be positioned at the air chamber top;
(c) Seed Layer that forms on first passivation layer, first passivation layer stop Seed Layer and resonator surrounding environment to interact;
(d) sandwich construction that on Seed Layer, forms; And
(e) second passivation layer that forms at the sandwich construction upper surface.
Sandwich construction wherein comprises:
(a) bottom electrode that on Seed Layer, forms;
(b) piezoelectric layer that on bottom electrode, forms; And
(c) top electrodes that on piezoelectric layer, forms.
Sandwich construction wherein comprises:
(a) first bottom electrode that on Seed Layer, forms;
(b) first piezoelectric layer that on first bottom electrode, forms;
(c) first top electrodes that on first piezoelectric layer, forms;
(d) decoupler layer that on first top electrodes, forms;
(e) second bottom electrode that on decoupler layer, forms;
(f) second piezoelectric layer that on second bottom electrode, forms; And
(g) second top electrodes that on second piezoelectric layer, forms.
The constituent material of described first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal (DLC), silica, silicon nitride and the hydrophobic polymer.
Described second passivation material and first passivation material are identical or different.
The thickness of described first passivation layer is 10～10000 dusts.
The constituent material of described Seed Layer is a kind of or two or more mixtures in aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and the carborundum.
A kind of method of making acoustic resonator comprises the steps:
(a) provide the substrate that has sacrifice layer;
(b) on sacrifice layer, form first passivation layer and extend to whole substrate;
(c) on first passivation layer, form Seed Layer;
(d) on Seed Layer, form sandwich construction;
(e) form second passivation layer at the sandwich construction upper surface; And
(f) sacrifice layer is removed to form air chamber from substrate.
The process that wherein forms sandwich construction comprises following several steps:
(a) on Seed Layer, form bottom electrode;
(b) on bottom electrode, form piezoelectric layer; And
(c) on piezoelectric layer, form top electrodes.
The process that wherein forms sandwich construction comprises following several steps:
(a) on Seed Layer, form first bottom electrode;
(b) on first bottom electrode, form first piezoelectric layer;
(c) on first piezoelectric layer, form first top electrodes;
(d) on first top electrodes, form decoupler layer;
(e) on decoupler layer, form second bottom electrode;
(f) on second bottom electrode, form second piezoelectric layer; And
(g) on second piezoelectric layer, form second top electrodes.
The manufacturing materials of first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal (DLC), silica, silicon nitride and the hydrophobic polymer.
The constituent material of the constituent material of second passivation layer and first passivation layer is identical or different.
Wherein the thickness of first passivation layer is 10～10000 dusts.
The constituent material of Seed Layer is a kind of or two or more mixtures in aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and the carborundum.
A kind of method of making acoustic resonator comprises the steps:
(a) provide substrate;
(b) in substrate, form first passivation layer;
(c) on first passivation layer, form Seed Layer;
(d) form sandwich construction;
(e) form second passivation layer at the sandwich construction upper surface; And
(f) a part of substrate below first passivation layer is removed to form air chamber.
The forming process of sandwich construction comprises following several steps:
(a) on Seed Layer, form bottom electrode;
(b) on bottom electrode, form piezoelectric layer; And
(c) on piezoelectric layer, form top electrodes.
The forming process of sandwich construction comprises following several steps:
(a) on Seed Layer, form first bottom electrode;
(b) on first bottom electrode, form first piezoelectric layer;
(c) on first piezoelectric layer, form first top electrodes;
(d) on first top electrodes, form decoupler layer;
(e) on decoupler layer, form second bottom electrode;
(f) on second bottom electrode, form second piezoelectric layer; And
(g) on second piezoelectric layer, form second top electrodes.
The manufacturing materials of first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal (DLC), silica, silicon nitride and the hydrophobic polymer.
The material that constitutes second passivation layer is identical or different with the material that constitutes first passivation layer.
Wherein the thickness of first passivation layer is 10～10000 dusts.
The constituent material of Seed Layer is aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and carborundum or their combination.
A kind of acoustic resonator comprises:
(a) have the substrate of the second surface of first surface and correspondence, and on the substrate first surface, have air chamber;
(b) first passivation layer on the substrate first surface, and first passivation layer is positioned at the air chamber top;
(c) second passivation layer and first passivation layer are spaced apart and come;
(d) sandwich construction is between first passivation layer and second passivation layer.
Further comprise being positioned at first passivation layer and the middle Seed Layer of sandwich construction, such first passivation layer is used to stop Seed Layer and resonator surrounding environment to interact.
Acoustic resonator of the present invention and processing method thereof, can weaken the absorption of material in resonator surface, eliminate or alleviate because the resonant frequency that surrounding air or wet environment influence produce is offset, loosened requirement to a great extent, greatly reduced the device manufacturing cost the resonator enclosed package.Therefore good electromechanical coupling factor and the quality factor of resonator are not affected simultaneously.
Description of drawings
Accompanying drawing is set forth principle of the present invention for detailed embodiment the present invention together with explanation.Use the identical identical or similar part of number indication in the accompanying drawings as far as possible, wherein:
Figure 1A and 1B are the acoustic resonator sectional views of first example of this patent;
Fig. 2 A and 2B are the acoustic resonator sectional views of second example of this patent;
Fig. 3 A and 3B are the acoustic resonator sectional views of the 3rd example of this patent;
Fig. 4 A and 4B are the acoustic resonator sectional views of the 4th example of this patent;
Figure 5 shows that the process chart of the acoustic resonator among Figure 1A and the 1B;
Figure 6 shows that the process chart of the acoustic resonator among Fig. 2 A and the 2B;
Figure 7 shows that the process chart of the acoustic resonator among Fig. 3 A and the 3B;
Figure 8 shows that the process chart of the acoustic resonator among Fig. 4 A and the 4B.
Embodiment
Below in conjunction with embodiment and accompanying drawing acoustic resonator of the present invention and processing method thereof are made a detailed description.
The present invention will be together with elaborating with reference to the accompanying drawings hereinafter, and its representative instance is also in this displaying.Although the present invention has many multi-form embodiments, the present invention is not limited to example as described herein.More accurately, providing of these examples is that elaboration in order to make this technology can be detailed and complete, and can fully pass on scope of the present invention to the people that are familiar with this field.Identical reference number is represented identical part all the time.
Example of the present invention is associated with the method for making acoustic wave device.FBAR will be described in the example below as a kind of acoustic wave device.
Carry out the description of example of the present invention together with accompanying drawing 1-8.Purpose according to this patent, just as described in detail, the present invention is relevant with the acoustic resonator of making in the substrate that has air chamber from the one hand, and this resonator has first passivation layer, Seed Layer, bottom electrode, piezoelectric, top electrodes and second passivation layer and they pile up continuously.Seed Layer selects for use certain material to guarantee the crystal orientation growth of bottom electrode, and the crystal orientation structure of bottom electrode is necessary for the piezoelectric layer that generates high crystal lattice orientation.First passivation layer can weaken the absorption of material in resonator surface, and is not subjected to the air that brings by air chamber and the influence of wet environment as following protective layer protection Seed Layer, and this air chamber is the hole that stays behind the releasing sacrificial layer.Therefore, the resonant frequency drift that is caused by environmental pollution is reduced to minimum, and resonator can be avoided the damaging influence that humidity or corrosive liquids cause.
In reference Figure 1A and 1B, resonator 100 first example for obtaining according to the present invention.Resonator 100 comprises substrate 110, first passivation layer 120 that in substrate 110, forms, the Seed Layer 130 that on first passivation layer 120, forms, the bottom electrode 142 that on Seed Layer 130, forms, the piezoelectric layer 144 that on bottom electrode 142, forms, the top electrodes 146 that on piezoelectric layer 144, forms, and second passivation layer 150 that on top electrodes 146, forms.
On Seed Layer 130, deposited bottom electrode 142 one by one, piezoelectric layer 144 and top electrodes 146.Bottom electrode 142 and top electrodes 146 are made by following metal, as gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), and ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminium (Al), titanium metalloids such as (Ti), but be not limited to above material.Piezoelectric layer 144 is by following material, as aluminium nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO
3), quartzy (quartz), potassium niobate (KNbO
3) or lithium tantalate (LiTaO
3) wait material, but be not limited to above material.
The piezoelectric layer material depends on the roughness and the material of the bottom electrode layer that is positioned at its below to a great extent.Seed Layer 130 can provide bottom electrode 142 level and smooth, that have good lattice structure, the bottom electrode 142 of good lattice structure and then can promote has the formation of the piezoelectric layer 144 of good lattice structure and C-axle orientation, therefore piezoelectric layer 144 has good quality, can make high performance resonator 100.In an example, the constituent material of Seed Layer 130 can be identical with the constituent material of piezoelectric layer 144, as aluminium nitride (AlN).The electromechanical coupling factor of resonator 100 is improved, and is suitable for making broadband filter.
In addition, the manufacturing materials of second passivation layer 150 of deposition can be identical or different with first passivation material on top electrodes 146.Second passivation layer 150 is used to prevent that top electrodes 146 from contacting with air, humidity or pollution, with the service behaviour of stabilizing cavity 100.
With reference to figure 2A and 2B, second example of resonator 200 for obtaining according to the present invention.Resonator 200 comprises substrate 210, first passivation layer 220 that in substrate 210, forms, the Seed Layer 230 that on first passivation layer 220, forms, first bottom electrode 242 that on Seed Layer 230, forms, first piezoelectric layer 244 that on first bottom electrode 242, forms, first top electrodes 246 that on first piezoelectric layer 244, forms, the decoupler layer 260 that on first top electrodes 246, forms, second bottom electrode 272 that on decoupler layer 260, forms, second piezoelectric layer 274 that on second bottom electrode 272, forms, second top electrodes 276 that on second piezoelectric layer 274, forms, and second passivation layer 250 that on second top electrodes 276, forms.
First bottom electrode 242, first piezoelectric layer 244 and first top electrodes 246 pile up on Seed Layer 230 successively to form a FBAR.Second bottom electrode 272, second piezoelectric layer 274 and second top electrodes 276 stack gradually and form the 2nd FBAR.First, second FBAR uprightly piles up and forms acoustical coupling resonance filter (CRF).Such CRF can have the higher stopband inhibition far away and the pass band width of broad.
First bottom electrode 242, first top electrodes 246, second bottom electrode 272 and second top electrodes 276 can be made by following metal, as metalloids such as Au, W, Mo, Pt, Ru, Ir, TiW, Al, Ti, but are not limited to above material.First piezoelectric layer 244 and second piezoelectric layer 274 are by following material, as AlN, ZnO, PZT, quartz, LiNbO
3, KNbO
3Or LiTaO
3Deng material.
It is level and smooth that Seed Layer 230 can provide, and the bottom electrode with good lattice structure can form high-quality piezoelectric layer 244 having on the bottom electrode of good lattice structure.Therefore,, can make high-performance piezoelectric layer 244, and then improve the service behaviour of resonator 200 by Seed Layer 230.In an example, the manufacturing materials of Seed Layer 230 can be identical with piezoelectric layer 244 materials, as AlN.
With reference to figure 3A and 3B, three example of resonator 300 for obtaining according to the present invention.Resonator 300 comprises substrate 310, first passivation layer 320 that in substrate 310, forms, the Seed Layer 330 that on first passivation layer 320, forms, the bottom electrode 342 that on Seed Layer 330, forms, the piezoelectric layer 344 that on bottom electrode 342, forms, the top electrodes 346 that on piezoelectric layer 344, forms, and second passivation layer 350 that on top electrodes 346, forms.Can will be positioned at a part of substrate removal of first passivation layer, 320 belows from the back side of substrate 310 by etching technics, thereby form air chamber 312.
Above Seed Layer 330, deposit first bottom electrode 342, piezoelectric layer 344 and first top electrodes 346 successively.First bottom electrode 342 and first top electrodes 346 can be made by following metal, as metalloids such as Au, W, Mo, Pt, Ru, Ir, TiW, Al, Ti, but are not limited to above material.Piezoelectric layer 344 is by following material, as AlN, ZnO, PZT, quartz (quartz), LiNbO
3, KNbO
3Or LiTaO
3Deng material.
With reference to figure 4A and 4B, four example of resonator 400 for obtaining according to the present invention.Resonator 400 comprises substrate 410, the first passivation layers 420, Seed Layer 430, the first bottom electrodes 442, first piezoelectric layer, 444, the first top electrodes 446, decoupler layer 460, the second bottom electrodes 472, second piezoelectric layer, 474, the second top electrodes 476, and second passivation layer 450.To be positioned at a part of substrate removal of first passivation layer, 420 belows by etching technics from the back side of substrate 410, thereby form air chamber 412.
First passivation layer 420 directly forms on air chamber 412.Better under the situation, the thickness of first passivation layer 420 is 10～10000 dusts.
Seed Layer 430 forms on first passivation layer 420.Seed Layer can be by AiN, AlON, WN, TiWN, SiO
2, Si
3N
4Or SiC or their these combinations of materials and make.
First passivation layer 420 prevents that as following protective layer Seed Layer 430 from acting on mutually with air that brings by air chamber and wet environment.If there is not first passivation layer 420, the resonance frequency of resonator 400 can be passed in time and be drifted about.Because air chamber 412 is connected with the resonator external environment condition, can cause the oxidation of resonator expose portion from air, humidity or the pollution of external environment condition.For the frequency drift with resonator is reduced to minimum, first passivation layer 420 is filled the material that is not easy to environmental activity usually, as carborundum (silicon oxide), aluminium oxide (aluminum oxide), diamond (diamond), diamond-like coal (DLC), silica (silicon oxide), silicon nitride (silicon nitride), hydrophobic polymer (hydrophobic polymer) or their combination.
First bottom electrode 442, first piezoelectric layer 444, first top electrodes 446 stack gradually and form a FBAR on first passivation layers 420.Second bottom electrode, 472, the second piezoelectric layers 474 and second top electrodes 476 stack gradually and form the 2nd FBAR.The one FBAR and the 2nd FBAR uprightly pile up and form CRF.CRF can have higher inhibition and have the bandwidth of broad at stopband far away.
First bottom electrode 442, first top electrodes 446, second bottom electrode 472 and second top electrodes 476 can be made by following metal, as metalloids such as Au, W, Mo, Pt, Ru, Ir, TiW, Al, Ti, but are not limited to these materials.First piezoelectric layer 444 and second piezoelectric layer 474 are by following material, as AlN, ZnO, PZT, quartz, LiNbO
3, KNbO
3Or LiTaO
3Deng material.
Decoupler layer 460 is clipped between first top electrodes 446 and second bottom electrode 472.Decoupler layer 460 can be that single layer structure also can be a sandwich construction.
Seed Layer 430 can provide bottom electrode level and smooth, that have good lattice structure, can form high-quality piezoelectric layer 444 having on the bottom electrode of good lattice structure.Therefore,, can make high-performance piezoelectric layer 444, and then improve the service behaviour of resonator 400 by Seed Layer 430.In an example, the manufacturing materials of Seed Layer 430 can be identical with the material of piezoelectric layer 444, as AlN.
Second passivation layer 450 forms on second top electrodes 476, contacts with air or wet environment to prevent second top electrodes 476.Second passivation layer, 450 manufacturing materials can be identical or different with first passivation layer, 420 materials.
The present invention also provides the manufacture method of above-described acoustic resonator.
In conjunction with Figure 1A and 1B, Figure 5 shows that the process chart of the acoustic resonator that obtains according to example of this patent, wherein comprise following step.
Step S101 provides the substrate 110 that has sacrifice layer 114.The material of making sacrifice layer comprises silica (siliconoxide), polysilicon (polysilicon), metal (metal) (as germanium (germanium), magnesium (magnesium), aluminium (aluminum) etc.) or polymer (polymer), utilizes sputtering technology, chemical vapor deposition (CVD) technology, physical vapor deposition (PVD) technology, spin coating or other close technology that sacrificial layer material is deposited on substrate 110 inner or its upper surfaces.Planarization substrate 110 and sacrifice layer 114 then;
Step S103 forms first passivation layer 120, and makes first passivation layer 120 be positioned at sacrifice layer 114 tops in substrate 110, usually, first passivation layer 120 is formed on substrate 110 and above the sacrifice layer 114;
Step S105 forms Seed Layer 130 on first passivation layer 120;
Step S107 forms bottom electrode 142 on Seed Layer 130;
Step S109 forms piezoelectric layer 144 on bottom electrode 142;
Step S111 forms top electrodes 146 on piezoelectric layer 144;
Step S113 forms second passivation layer 150 on top electrodes 146;
Step S115 removes sacrifice layer 144 to form air chamber 112.
In an example, by emptying road 116 sacrificial layer material is etched away.Emptying road 116 is connected air chamber 112 with resonator 100 external environment conditions.Other etching technics such as deep reaction ion etching (DRIE) and utilization also can be used for sacrifice layer 114 is removed in substrate 110 as the dependence crystal orientation wet etching of KOH, TMAH or EDP.Step S115 can be placed on step S107, S109, S111 or S113 front.That is to say and before bottom electrode 142, piezoelectric layer 144, top electrodes 146 and second passivation layer 150 form, to get rid of sacrifice layer 114.
In conjunction with Fig. 2 A and 2B, Figure 6 shows that the process chart of the acoustic resonator that obtains according to another example of this patent, comprise following step in its manufacture process.
Step S201 provides the substrate 210 that has sacrifice layer 214.Sacrificial layer material comprises silica (silicon oxide), polysilicon (polysilicon), metal (metal) (as germanium (germanium), magnesium (magnesium), aluminium (aluminum) etc.) or polymer (polymer), utilize sputtering technology, chemical vapor deposition (CVD) technology, physical vapor deposition (PVD) technology, spin coating or other close technology that sacrificial layer material is deposited on substrate 210 inner or its upper surface, planarization substrate 210 and sacrifice layers 214 then;
Step S203 forms first passivation layer 220 on sacrifice layer 214.Usually, first passivation layer 220 is formed on substrate 210 and sacrifice layer 214 tops;
Step S205 forms Seed Layer 230 on first passivation layer 220;
Step S207 forms first bottom electrode 242 on Seed Layer 230;
Step S209 forms first piezoelectric layer 244 on first bottom electrode 242;
Step S211 forms first top electrodes 246 on first piezoelectric layer 244;
Step S213 forms decoupler layer 260 on first top electrodes 246;
Step S215 forms second bottom electrode 272 on decoupler layer 260;
Step S217 forms second piezoelectric layer 274 on second bottom electrode 272;
Step S219 forms second top electrodes 276 on second piezoelectric layer 274;
Step S221 forms second passivation layer 250 on second top electrodes 276;
Step S223 removes sacrifice layer 214 to form air chamber 212.
In an example, sacrifice layer 214 is removed by emptying road 216.Emptying road 216 is connected air chamber 212 with resonator 200 external environment conditions.Other etching technics such as deep reaction ion etching (DRIE) and utilization also can be used for sacrifice layer 214 is removed from substrate 210 as the dependence crystal orientation wet etching of KOH, TMAH or EDP.Step S223 can be placed on step S207, S209, S211, S213, S215, S217, S219 or S221 front.That is to say and before first bottom electrode 242, first piezoelectric layer 244, first top electrodes 246, decoupler layer 260, second bottom electrode 272, second piezoelectric layer 274, second top electrodes 276 and second passivation layer 250 form, to remove sacrifice layer 214.
In conjunction with Fig. 3 A and 3B, Figure 7 shows that the process chart of the acoustic resonator that obtains according to another example of this patent, comprise following step in its manufacture process.
Step S301 provides substrate 310;
Step S303 forms first passivation layer 320 in substrate 310;
Step S305 forms Seed Layer 330 on first passivation layer 320, usually, Seed Layer 330 is formed on above first passivation layer 320;
Step S307 forms bottom electrode 342 on Seed Layer 330;
Step S309 forms piezoelectric layer 344 on bottom electrode 342;
Step S311 forms top electrodes 346 on piezoelectric layer 344;
Step S313 forms second passivation layer 350 on top electrodes 346;
Step S315, substrate 310 parts (forming first passivation layer 320 on it) remove from substrate 310 back sides to form air chamber 312 by etching technics.To be positioned at a part of substrate removal of first passivation layer, 320 belows by etching technics from the back side of substrate 310, thereby form air chamber 312.
In conjunction with Fig. 4, Figure 8 shows that the process chart of the acoustic resonator that further obtains according to another example of this patent, comprise following step in its manufacture process.
Step S401 provides substrate 410;
Step S403 forms first passivation layer 420 in substrate 410;
Step S405 forms Seed Layer 430 on first passivation layer 420.Usually, Seed Layer 430 is formed on first passivation layer, 420 surfaces;
Step S407 forms first bottom electrode 442 on Seed Layer 430;
Step S409 forms first piezoelectric layer 444 on first bottom electrode 442;
Step S411 forms first top electrodes 446 on first piezoelectric layer 444;
Step S413 forms decoupler layer 460 on first top electrodes 446;
Step S415 forms second bottom electrode 472 on decoupler layer 460;
Step S417 forms second piezoelectric layer 474 on second bottom electrode 472;
Step S419 forms second top electrodes 476 on second piezoelectric layer 474;
Step S421 forms second passivation layer 450 on second top electrodes 476;
Step S423 will be positioned at a part of substrate removal of first passivation layer, 420 belows by etching technics from the back side of substrate 410, thereby form air chamber 412.
Generally speaking, the invention discloses the acoustic resonator that has one deck passivation layer at least.Passivation layer is in order to weaken the absorption of material in resonator surface, and is not subjected to the air that brings by air chamber and the influence of wet environment as following protective layer protection Seed Layer.Therefore, the resonant frequency drift that is caused by environmental pollution is reduced to minimum, and resonator can be avoided the damaging influence that humidity or corrosive liquids cause simultaneously.
Above-mentioned description to several typical body wave resonators among the present invention only is in order to illustrate that these explanations are not very detailed, can not limit the definite form of invention.In view of the present invention, can make many modifications and variations.
The selection of example and description are in order to explain principle of the present invention and practical application, so that stimulate the other technologies in this field to use the present invention and various example, and to carry out suitable modification according to special-purpose.Do not depart from spirit and scope of the invention, it is easily that the technology of using this field changes example.Therefore, scope of the present invention is defined by accessory claim, rather than is determined by the example of foregoing description and wherein discussion.
Claims (23)
1. acoustic resonator is characterized in that: comprising:
(a) has the substrate of air chamber;
(b) first passivation layer that in substrate, forms, and be positioned at the air chamber top;
(c) Seed Layer that forms on first passivation layer, first passivation layer stop Seed Layer and resonator surrounding environment to interact;
(d) sandwich construction that on Seed Layer, forms; And
(e) second passivation layer that forms at the sandwich construction upper surface.
2. acoustic resonator according to claim 1 is characterized in that, sandwich construction wherein comprises:
(a) bottom electrode that on Seed Layer, forms;
(b) piezoelectric layer that on bottom electrode, forms; And
(c) top electrodes that on piezoelectric layer, forms.
3. acoustic resonator according to claim 1 is characterized in that, sandwich construction wherein comprises:
(a) first bottom electrode that on Seed Layer, forms;
(b) first piezoelectric layer that on first bottom electrode, forms;
(c) first top electrodes that on first piezoelectric layer, forms;
(d) decoupler layer that on first top electrodes, forms;
(e) second bottom electrode that on decoupler layer, forms;
(f) second piezoelectric layer that on second bottom electrode, forms; And
(g) second top electrodes that on second piezoelectric layer, forms.
4. acoustic resonator according to claim 1, it is characterized in that the constituent material of described first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal (DLC), silica, silicon nitride and the hydrophobic polymer.
5. acoustic resonator according to claim 1 is characterized in that, described second passivation material and first passivation material are identical or different.
6. acoustic resonator according to claim 1 is characterized in that, the thickness of described first passivation layer is 10～10000 dusts.
7. acoustic resonator according to claim 1 is characterized in that, the constituent material of described Seed Layer is a kind of or two or more mixtures in aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and the carborundum.
8. a method of making acoustic resonator is characterized in that: comprise the steps:
(a) provide the substrate that has sacrifice layer;
(b) on sacrifice layer, form first passivation layer and extend to whole substrate;
(c) on first passivation layer, form Seed Layer;
(d) on Seed Layer, form sandwich construction;
(e) form second passivation layer at the sandwich construction upper surface; And
(f) sacrifice layer is removed to form air chamber from substrate.
9. the method for manufacturing acoustic resonator according to claim 8 is characterized in that, the process that wherein forms sandwich construction comprises following several steps:
(a) on Seed Layer, form bottom electrode;
(b) on bottom electrode, form piezoelectric layer; And
(c) on piezoelectric layer, form top electrodes.
10. the method for manufacturing acoustic resonator according to claim 8 is characterized in that, the process that wherein forms sandwich construction comprises following several steps:
(a) on Seed Layer, form first bottom electrode;
(b) on first bottom electrode, form first piezoelectric layer;
(c) on first piezoelectric layer, form first top electrodes;
(d) on first top electrodes, form decoupler layer;
(e) on decoupler layer, form second bottom electrode;
(f) on second bottom electrode, form second piezoelectric layer; And
(g) on second piezoelectric layer, form second top electrodes.
11. the method for manufacturing acoustic resonator according to claim 8, it is characterized in that the manufacturing materials of first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal (DLC), silica, silicon nitride and the hydrophobic polymer.
12. the method for manufacturing acoustic resonator according to claim 8 is characterized in that, the constituent material of the constituent material of second passivation layer and first passivation layer is identical or different.
13. the method for manufacturing acoustic resonator according to claim 8 is characterized in that, wherein the thickness of first passivation layer is 10～10000 dusts.
14. the method for manufacturing acoustic resonator according to claim 8 is characterized in that, the constituent material of Seed Layer is a kind of or two or more mixtures in aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and the carborundum.
15. a method of making acoustic resonator is characterized in that: comprise the steps:
(a) provide substrate;
(b) in substrate, form first passivation layer;
(c) on first passivation layer, form Seed Layer;
(d) form sandwich construction;
(e) form second passivation layer at the sandwich construction upper surface; And
(f) a part of substrate below first passivation layer is removed to form air chamber.
16. the method for manufacturing acoustic resonator according to claim 15 is characterized in that, the forming process of sandwich construction comprises following several steps:
(a) on Seed Layer, form bottom electrode;
(b) on bottom electrode, form piezoelectric layer; And
(c) on piezoelectric layer, form top electrodes.
17. the method for manufacturing acoustic resonator according to claim 15 is characterized in that, the forming process of sandwich construction comprises following several steps:
(a) on Seed Layer, form first bottom electrode;
(b) on first bottom electrode, form first piezoelectric layer;
(c) on first piezoelectric layer, form first top electrodes;
(d) on first top electrodes, form decoupler layer;
(e) on decoupler layer, form second bottom electrode;
(f) on second bottom electrode, form second piezoelectric layer; And
(g) on second piezoelectric layer, form second top electrodes.
18. the method for manufacturing acoustic resonator according to claim 15, it is characterized in that the manufacturing materials of first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal (DLC), silica, silicon nitride and the hydrophobic polymer.
19. the method for manufacturing acoustic resonator according to claim 15 is characterized in that, the material that constitutes second passivation layer is identical or different with the material that constitutes first passivation layer.
20. the method for manufacturing acoustic resonator according to claim 15 is characterized in that, wherein the thickness of first passivation layer is 10～10000 dusts.
21. the method for manufacturing acoustic resonator according to claim 15 is characterized in that, the constituent material of Seed Layer is aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and carborundum or their combination.
22. an acoustic resonator is characterized in that: comprising:
(a) have the substrate of the second surface of first surface and correspondence, and on the substrate first surface, have air chamber;
(b) first passivation layer on the substrate first surface, and first passivation layer is positioned at the air chamber top;
(c) second passivation layer and first passivation layer are spaced apart and come;
(d) sandwich construction is between first passivation layer and second passivation layer.
23. acoustic resonator according to claim 22 is characterized in that, further comprises being positioned at first passivation layer and the middle Seed Layer of sandwich construction, such first passivation layer is used to stop Seed Layer and resonator surrounding environment to interact.
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