CN108281363B - A low-cost piezoelectric resonator/sensor packaging process method - Google Patents
A low-cost piezoelectric resonator/sensor packaging process method Download PDFInfo
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- CN108281363B CN108281363B CN201810046581.0A CN201810046581A CN108281363B CN 108281363 B CN108281363 B CN 108281363B CN 201810046581 A CN201810046581 A CN 201810046581A CN 108281363 B CN108281363 B CN 108281363B
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000012858 packaging process Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 27
- 235000019687 Lamb Nutrition 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000007747 plating Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- LUKDNTKUBVKBMZ-UHFFFAOYSA-N aluminum scandium Chemical compound [Al].[Sc] LUKDNTKUBVKBMZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 7
- 239000008367 deionised water Substances 0.000 abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract description 4
- 239000012530 fluid Substances 0.000 abstract description 3
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- 239000002861 polymer material Substances 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910015844 BCl3 Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
本发明涉及一种低成本的压电谐振器/传感器封装工艺方法。本发明在现成的氮化铝兰姆波谐振器AlN Lame mode resonator器件上采用Si、Ge、SiGe等四族材料作为牺牲层材料，氧化硅或者氮化硅薄膜作为封装结构层，在氮化铝谐振器器件完全释放后，沉积SU‑8高分子材料进行密封封装，全套工艺在400℃完成，与现行CMOS工艺完全兼容而且成本低，封装层的厚度有二氧化硅和SU‑8层共同决定，可以出现10微米以下的封装层，适合流体等高灵敏度环境下使用。经测试，封装后的器件在去离子水环境里性能没有明显变化。The invention relates to a low-cost piezoelectric resonator/sensor packaging process method. In the present invention, four groups of materials such as Si, Ge, SiGe are used as sacrificial layer materials on the ready-made aluminum nitride Lamb wave resonator AlN Lame mode resonator device, and silicon oxide or silicon nitride film is used as the packaging structure layer. After the resonator device is completely released, SU-8 polymer material is deposited for sealing and encapsulation. The whole process is completed at 400 °C, which is fully compatible with the current CMOS process and has low cost. The thickness of the encapsulation layer is determined by the silicon dioxide and SU-8 layers. , an encapsulation layer below 10 microns can appear, which is suitable for use in high-sensitivity environments such as fluids. After testing, the performance of the packaged device did not change significantly in the deionized water environment.
Description
Technical Field
The invention relates to a packaging process method of a piezoelectric resonator or a piezoelectric sensor.
Background
The cost of the existing bonding and packaging process under the wafer scale is high, for example: "Hermetic Wafer Level thin film Packaging for MEMS", Jeffrey Bo Wooon Soon, Navab Singh, EnesCalayir, GaryK. Fedder, Gianluca Piazza, 2016IEEE 66th Electronic Components and technology conference shows a Wafer Level silicon-based package suitable for large-scale fabrication. However, the method is high in cost, and the thickness of the packaging layer is difficult to reduce, so that the method is not suitable for measurement of a high-sensitivity sensor.
Disclosure of Invention
The invention aims to provide a packaging process of a high-sensitivity sensor suitable for being used in fluid or organism and other environments, and the performance of a packaged device is not influenced.
In order to achieve the above object, the present invention provides a low-cost piezoelectric resonator/sensor packaging process, which is characterized by comprising the following steps:
step 1, manufacturing a piezoelectric lamb wave resonator or sensor on high-resistance silicon, and plating a metal bottom electrode layer on the piezoelectric lamb wave resonator or sensor;
step 2, plating a piezoelectric material layer (such as aluminum nitride, or doped aluminum nitride, or other piezoelectric materials) on the metal bottom electrode layer, and exposing a part of the metal bottom electrode by adopting a wet etching process;
step 3, plating a layer of metal on the piezoelectric material layer to serve as an upper electrode;
step 4, utilizeContaining Cl2、BCl3Etching the piezoelectric material layer with the ion gas;
step 5, sputtering and depositing an amorphous four-group material layer on the active area of the piezoelectric lamb wave resonator or the sensor;
step 6, depositing a layer of insulating medium material layer by utilizing an ion-enhanced chemical vapor deposition process, and etching release holes on the insulating medium material layer by utilizing dry etching;
step 7, etching partial bulk silicon materials below the amorphous state four-family material layer and the metal bottom electrode layer by using xenon difluoride until the piezoelectric lamb wave resonator or the sensor is completely released;
and 8, coating an SU-8 layer by gluing, and exposing the electrode plate by using the negative glue characteristic of the SU-8 layer through a photoetching process to perform electrical measurement.
Preferably, in the step 2, the piezoelectric material is a piezoelectric material with a high electromechanical coupling coefficient.
Preferably, the piezoelectric material with high electromechanical coupling coefficient is aluminum nitride or scandium (Sc) -doped aluminum nitride or the like.
Preferably, the thickness of the piezoelectric material layer of the piezoelectric lamb wave resonator or the sensor is 500 nm-1 μm, and the thickness of the metal bottom electrode layer is 100-300 nm.
Preferably, in the step 6, the thickness of the insulating medium material layer is 2 μm.
Preferably, in the step 6, the insulating dielectric material is silicon dioxide or silicon nitride.
Preferably, in the step 8, the thickness of the SU-8 layer is 4-8 μm.
Preferably, the amorphous group iv material is an amorphous group a material, wherein a is a group iv element compound (e.g., SiGe) or an amorphous group iv element material (e.g., Ge).
According to the invention, four-group materials such as Si, Ge, SiGe and the like are adopted as sacrificial layer materials on a ready-made piezoelectric lamb wave resonator Lame mode resonator device, a silicon dioxide or silicon nitride film is adopted as a packaging structure layer, SU-8 high polymer materials are deposited for sealing and packaging after the resonator device is completely released, the whole set of process is completed at 400 ℃, the process is completely compatible with the existing CMOS process and has low cost, the thickness of the packaging layer is determined by the silicon dioxide and the SU-8 layers, the packaging layer below 10 microns can be realized, and the piezoelectric lamb wave resonator Lame mode resonator device is suitable for being used in high-sensitivity environments such as fluid and the like. Through testing, the performance of the packaged device in a deionized water environment is not obviously changed.
Drawings
FIGS. 1a to 1h are process diagrams of the present invention;
FIG. 2 is a diagram of device performance in a deionized water environment for a packaged device actually produced by the process of the present invention;
fig. 3 is a graph of device performance in a deionized water environment after 9 months for a packaged device actually fabricated by the process of the present invention.
Detailed Description
In order to make the invention more comprehensible, preferred embodiments are described in detail below with reference to the accompanying drawings.
The invention provides a low-cost piezoelectric resonator/sensor packaging process method, which comprises the following steps:
step 1, as shown in fig. 1a, a piezoelectric lamb wave resonator or sensor is manufactured on high-resistance silicon, and then a metal bottom electrode layer is plated on the piezoelectric lamb wave resonator or sensor. The thickness of the piezoelectric lamb wave resonator or sensor is 1 mu m, and the thickness of the metal bottom electrode layer is 100 nm.
And 2, as shown in fig. 1b, plating an aluminum nitride layer on the metal bottom electrode layer, and exposing a part of the metal bottom electrode by adopting a wet etching process. The thickness of the aluminum nitride layer was 100 nm.
And step 3, as shown in figure 1c, plating a layer of metal on the aluminum nitride layer to be used as an upper electrode.
Step 4, as shown in FIG. 1d, using a solution containing Cl2、BCl3The ion gas of (2) etches the aluminum nitride layer.
Step 5, as shown in FIG. 1e, sputter depositing an amorphous silicon a-Si (e.g., Ge or SiGe) layer over the active area of the AlAlN lamb wave resonator or sensor.
And 6, as shown in figure 1f, depositing a silicon dioxide layer by using an ion-enhanced chemical vapor deposition process, and etching release holes on the silicon dioxide layer by using dry etching. The thickness of the silicon dioxide layer was 2 μm.
Step 7, as shown in figure 1g, etching partial bulk silicon materials below the amorphous silicon a-Si layer and the metal bottom electrode layer by using xenon difluoride until the aluminum nitride lamb wave resonator or the sensor is completely released;
and 8, as shown in figure 1h, coating an SU-8 layer by a glue coating mode, and exposing the electrode plate by using the negative glue characteristic of the SU-8 layer through a photoetching process to perform electrical measurement. The thickness of the SU-8 layer is 4-8 μm.
Fig. 2 shows that the packaged device actually produced has no significant change in device performance in a deionized water environment.
Figure 3 shows that the performance of the packaged resonator still did not change significantly after 9 months.
Claims (6)
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| CN201810046581.0A CN108281363B (en) | 2018-01-17 | 2018-01-17 | A low-cost piezoelectric resonator/sensor packaging process method |
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| CN108281363A CN108281363A (en) | 2018-07-13 |
| CN108281363B true CN108281363B (en) | 2020-04-14 |
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| CN109450401B (en) * | 2018-09-20 | 2022-03-18 | 天津大学 | Flexible single crystal lamb wave resonator and method of forming the same |
| CN110071703B (en) * | 2019-02-19 | 2023-02-17 | 天津大学 | a duplexer |
| CN110266285B (en) * | 2019-05-31 | 2021-04-02 | 武汉大学 | Micromechanical resonator, preparation method thereof and frequency fine tuning correction method |
| CN111934635B (en) * | 2020-06-30 | 2024-03-01 | 上海科技大学 | Micro-electromechanical wireless signal wake-up receiver and preparation method thereof |
| CN112713235A (en) * | 2021-02-04 | 2021-04-27 | 曹建峰 | Manufacturing method of high-temperature aluminum nitride piezoelectric sensor based on metal substrate |
| WO2022226914A1 (en) * | 2021-04-29 | 2022-11-03 | 天津大学 | Piezoelectric mems silicon resonator having beam structure, forming method therefor, and electronic device |
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| CN100546178C (en) * | 2003-12-19 | 2009-09-30 | 宇部兴产株式会社 | Method for manufacturing piezoelectric thin film device and piezoelectric thin film device |
| CN102025340A (en) * | 2010-10-21 | 2011-04-20 | 张�浩 | Sonic wave resonator and processing method thereof |
| CN102122941A (en) * | 2010-11-01 | 2011-07-13 | 中国电子科技集团公司第二十六研究所 | Tunable preset cavity type silicon on insulator (SOI) substrate film body acoustic resonator and manufacturing method thereof |
| US8278802B1 (en) * | 2008-04-24 | 2012-10-02 | Rf Micro Devices, Inc. | Planarized sacrificial layer for MEMS fabrication |
| CN107199169A (en) * | 2017-04-14 | 2017-09-26 | 杭州士兰微电子股份有限公司 | Ultrasonic transducer, ultrasonic fingerprint sensor and its manufacture method |
| CN206878791U (en) * | 2014-12-08 | 2018-01-12 | 株式会社村田制作所 | piezoelectric device |
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- 2018-01-17 CN CN201810046581.0A patent/CN108281363B/en active Active
Patent Citations (6)
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| CN100546178C (en) * | 2003-12-19 | 2009-09-30 | 宇部兴产株式会社 | Method for manufacturing piezoelectric thin film device and piezoelectric thin film device |
| US8278802B1 (en) * | 2008-04-24 | 2012-10-02 | Rf Micro Devices, Inc. | Planarized sacrificial layer for MEMS fabrication |
| CN102025340A (en) * | 2010-10-21 | 2011-04-20 | 张�浩 | Sonic wave resonator and processing method thereof |
| CN102122941A (en) * | 2010-11-01 | 2011-07-13 | 中国电子科技集团公司第二十六研究所 | Tunable preset cavity type silicon on insulator (SOI) substrate film body acoustic resonator and manufacturing method thereof |
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