CN104124938A - Resonator and resonant frequency regulate and control method thereof - Google Patents

Abstract

The invention discloses a resonator and a resonant frequency control method of the resonator. The resonant frequency control method includes: providing a resonator, wherein the resonator includes a piezoelectric layer and a plurality of electrode layers; It is required to form a multi-layer molecular film on the surface of the resonator, wherein the multi-layer molecular film is used to adjust the resonant frequency of the resonator. The present invention forms a multilayer molecular film on the surface of the resonator, and can simply and effectively realize the adjustment and control of the resonant frequency of the resonator through the formed multilayer molecular film, and at the same time can save costs and improve the accuracy of frequency regulation; in addition, the present invention In the invention, by performing plasma treatment on the surface of the resonator, the multi-layer molecular film is selectively deposited on the surface of the resonator, and the influence of the processed resonator on the bonding wire connection is avoided.

Description

Resonator and resonant frequency control method of resonator

technical field

The invention relates to the field of semiconductors, in particular to a resonator and a method for regulating the resonant frequency of the resonator.

Background technique

With the rapid development of communication technology, the center frequency of communication equipment has been greatly improved. Therefore, the communication system has higher requirements on the performance and size of the frequency selection device-filter, and many other aspects. Moreover, the small size of the communication system Globalization and integration have also become the inevitable trend of system development.

However, for the existing traditional filters, when the center frequency of the communication system is raised high enough, for example, the center frequency reaches above gigahertz, then due to the limitations of its own performance and other reasons, the existing traditional filters are obviously It cannot meet the needs of communication system integration and miniaturization.

Therefore, in order to overcome the above-mentioned defects of traditional filters, a variety of new filters have been developed on the market, such as thin film bulk acoustic resonator filters, and because the new filters have small size, high quality factor, high operating frequency and compatibility with The many advantages of high compatibility of semiconductor technology make it have a broader market prospect in the field of communication.

Then, as far as the thin film bulk acoustic resonator filter is concerned, it realizes the filtering of signals through the topology formed by connecting multiple thin film bulk acoustic resonators in series and in parallel. Therefore, the resonance of the resonator in the filter The frequency directly affects the passband position of the filter, that is to say, the resonant frequency of the resonator has a direct impact on the filtering effect of the filter.

Therefore, in order to make the filtering effect of the new filter better, in the traditional resonator process, the resonant frequency of the resonator is mainly adjusted by changing the thickness of the mass load on the surface of the resonator, that is to say, the existing The technology is to adjust the resonant frequency of the resonator by adopting the traditional deposition, photolithography and etching methods in the semiconductor process.

However, for the above-mentioned traditional methods of adjusting the resonant frequency of resonators, there are generally problems of high cost of adjustment, long time, complicated operation and low accuracy of adjustment. In addition, due to the need to use photoresist , etching solution and other chemical preparations, therefore, it will also bring certain hazards to operators and the environment.

However, no effective solution has been proposed to address the problems of long control time, high cost, complicated operation, and low control accuracy in the related art when adjusting the resonant frequency of the resonator.

Contents of the invention

Aiming at the problems of long regulation time, high cost, complicated operation and low regulation precision in the related art when regulating the resonant frequency of the resonator, the present invention proposes a resonator and a resonant frequency regulation of the resonator According to the method, the resonant frequency of the resonator can be adjusted by forming a multi-layer molecular thin film on the surface of the resonator, and at the same time, the cost can be saved and the precision of frequency regulation can be improved.

Technical scheme of the present invention is realized like this:

According to one aspect of the present invention, a method for adjusting the resonant frequency of a resonator is provided.

The resonant frequency regulation method includes:

providing a resonator, wherein the resonator includes a piezoelectric layer and a plurality of electrode layers;

According to the expected resonant frequency requirement, a multilayer molecular film is formed on the surface of the resonator, wherein the multilayer molecular film is used to adjust the resonant frequency of the resonator.

Wherein, when forming a multilayer molecular film on the surface of the resonator, a molecular self-assembly technique can be used to form a multilayer molecular film on the surface of the resonator.

Among them, the way to realize molecular self-assembly may include at least one of the following:

Assemble polyacrylamine hydrochloride or allylamine hydrochloride with polyacrylic acid;

Assembly of polyethyleneimine and polyacrylic acid;

Assemble polylysine and hyaluronic acid;

Assembling polystyrene sulfonate or styrene sulfonate with polyallylamine hydrochloride or allylamine hydrochloride;

Assembling polydiallyldimethylammonium chloride or diallyldimethylammonium chloride with polystyrene sulfonate or styrene sulfonate;

Assembling tannic acid and polyvinylpyrrolidone;

Assembling tannic acid with poly-N-vinylcaprolactam;

Assembling tannic acid and poly-N-isopropylacrylamide;

Assemble poly-4-vinylpyridine or 4-vinylpyridine with polyacrylic acid.

In addition, when forming a multi-layer molecular film on the surface of the resonator, the resonator can be deposited separately by different solutions, so that the different solutions can pass through the molecules between the solutions without external force. The interaction force forms a multilayer molecular film on the surface of the resonator.

Among them, the way of deposition treatment includes at least one of the following:

by means of solution immersion;

Apply by swirling.

In addition, when adjusting the resonant frequency of the resonator, the adjusted object may include at least one of the following:

the concentration of each solution;

The hydrogen ion activity index (PH) value of each solution;

The deposition time of each solution on the resonator surface;

The number of times the deposition process of the solution is performed on the resonator.

Among them, the solution can be composed of organic solution or inorganic solution, and different solutions can be composed of two or more organic solutions or two or more inorganic solutions. composition of the solution.

And, the interaction force of molecules between various solutions may include at least one of the following:

Electrostatic interactions between organic molecules;

Hydrogen bonding between organic molecules;

Coordination bonds between organic molecules;

Interactions between inorganic molecules;

The interaction of modified functional groups between inorganic substances, wherein the functional group modification has been completed on the inorganic substances in advance.

In addition, before forming a multilayer molecular film on the surface of the resonator, the resonance frequency regulation method further includes:

By modifying the resonator with functional groups, chemical functional groups are formed on the surface of the resonator;

And, corresponding to it, when forming a multilayer molecular film on the surface of the resonator, a multilayer molecular film can be formed on the surface of the resonator with chemical functional groups, wherein, the chemical functional group and the multilayer molecular film can be realized. Self-assembly.

Wherein, before modifying the resonator with functional groups, the resonance frequency regulation method further includes:

Hydroxyl groups are formed on the surface of the resonator by plasma treatment of the resonator;

And, correspondingly, when the functional group modification is performed on the resonator, the functional group modification can be performed on the surface of the resonator on which hydroxyl groups have been formed.

Wherein, the manner of functional group modification may include at least one of the following:

Chemical vapor deposition; wet chemical means.

In addition, before forming a multilayer molecular film on the surface of the resonator, the resonance frequency regulation method further includes:

Hydroxyl groups are formed on the surface of the resonator by plasma treatment of the resonator;

And, correspondingly, when forming a multilayer molecular film on the surface of the resonator, a multilayer molecular film can be formed on the surface of the resonator on which hydroxyl groups have been formed, so that the hydroxyl group and the multilayer molecular film can realize molecular self-assembly.

According to another aspect of the present invention, a resonator is provided.

The resonator consists of:

first electrode;

a piezoelectric layer, wherein at least a portion of the piezoelectric layer is disposed over the first electrode;

a second electrode, wherein at least a portion of the second electrode is disposed over the piezoelectric layer;

A surface, the first electrode, the piezoelectric layer and the second electrode are located below the surface;

A multilayer molecular film is located above the surface, wherein the multilayer molecular film is used to adjust the resonant frequency of the resonator.

Among them, the multilayer molecular film can be formed by molecular self-assembly technology, and the way of molecular self-assembly can include at least one of the following:

Assemble polyacrylamine hydrochloride or allylamine hydrochloride with polyacrylic acid;

Assembly of polyethyleneimine and polyacrylic acid;

Assemble polylysine and hyaluronic acid;

Assembling polystyrene sulfonate or styrene sulfonate with polyallylamine hydrochloride or allylamine hydrochloride;

Assembling polydiallyldimethylammonium chloride or diallyldimethylammonium chloride with polystyrene sulfonate or styrene sulfonate;

Assembling tannic acid and polyvinylpyrrolidone;

Assembling tannic acid with poly-N-vinylcaprolactam;

Assembling tannic acid and poly-N-isopropylacrylamide;

Assemble poly-4-vinylpyridine or 4-vinylpyridine with polyacrylic acid.

In addition, the resonator may be a thin-film bulk acoustic wave resonator, a surface acoustic wave resonator, or a contour mode resonator.

In addition, the constituent material of the piezoelectric layer may be selected from the group comprising: zinc oxide, aluminum nitride.

Optionally, the resonator further includes:

a substrate defining a cavity;

a seed layer disposed over the substrate, and at least a portion of the seed layer disposed over the cavity in the substrate;

And, the first electrode is disposed over the seed layer.

Wherein, the substrate is a silicon substrate.

And, the constituent material of the seed layer may be selected from the group consisting of aluminum nitride material.

Additionally, the resonator may include:

A passivation layer for electrical insulation of the resonator and to prevent oxidation of the resonator;

Gold thin film, used to realize the bonding of the resonator and the peripheral printed circuit board (PCB) gold wire;

Wherein, both the passivation layer and the gold film are located outside the first electrode, the piezoelectric layer and the second electrode, and the multilayer molecular film is formed on the outer surface of the passivation layer.

Also, the constituent material of the passivation layer may be selected from the group comprising: aluminum nitride material, silicon material, silicon dioxide material, quartz material.

According to the expected resonant frequency requirements, the invention forms multi-layer molecular films on the surface of the resonator, and realizes the adjustment of the resonant frequency of the resonator through the multi-layer molecular films. While the adjustment of the resonant frequency of the resonator is completed, the cost can be saved, and the precision of frequency adjustment is improved.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required in the embodiments. Obviously, the accompanying drawings in the following description are only some of the present invention. Embodiments, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without any creative effort.

FIG. 1 is a flow chart of a method for regulating the resonance frequency of a resonator according to an embodiment of the present invention;

Fig. 2 is a cross-sectional view of a thin film bulk acoustic resonator according to a specific embodiment of the present invention;

Fig. 3 is a flow chart of adjusting the frequency by depositing a molecular self-assembled multilayer film on a device according to a specific embodiment of the present invention;

4 is a schematic diagram of a chemical reaction of molecular self-assembled multilayer film deposition according to a specific embodiment of the present invention;

5 is a cross-sectional view of a multi-layer molecular film formed on the surface of a thin-film BAW resonator according to a specific embodiment of the present invention, and is also a cross-sectional view of the resonator according to an embodiment of the present invention.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.

According to an embodiment of the present invention, a method for regulating the resonant frequency of a resonator is provided.

As shown in FIG. 1, the resonator regulation method according to the embodiment of the present invention includes:

Step S101, providing a resonator, wherein the resonator includes a piezoelectric layer and a plurality of electrode layers;

Step S103, according to the expected resonant frequency requirements, a multi-layer molecular film is formed on the surface of the resonator, wherein the multi-layer molecular film is used to adjust the resonant frequency of the resonator.

Through the above solution of the present invention, the resonant frequency of the resonator can be adjusted by forming a multi-layer molecular film on the surface of the resonator, and at the same time, the cost can be saved and the precision of frequency regulation can be improved.

Since the self-assembly technology is simple and easy, and does not require special devices, in one embodiment, when a multi-layer molecular film is formed on the surface of the resonator, the molecular self-assembly technology can be used to form a multi-layer molecular film on the surface of the resonator. film.

Among them, the way to realize molecular self-assembly may include at least one of the following:

Assemble polyacrylamine hydrochloride or allylamine hydrochloride with polyacrylic acid;

Assembly of polyethyleneimine and polyacrylic acid;

Assemble polylysine and hyaluronic acid;

Assembling polystyrene sulfonate or styrene sulfonate with polyallylamine hydrochloride or allylamine hydrochloride;

Assembling polydiallyldimethylammonium chloride or diallyldimethylammonium chloride with polystyrene sulfonate or styrene sulfonate;

Assembling tannic acid and polyvinylpyrrolidone;

Assembling tannic acid with poly-N-vinylcaprolactam;

Assembling tannic acid and poly-N-isopropylacrylamide;

Assemble poly-4-vinylpyridine or 4-vinylpyridine with polyacrylic acid.

However, it should be noted that in practical applications, the way to realize molecular self-assembly can also be the assembly between other organic or inorganic substances not listed above, as long as it can realize molecular self-assembly, that is to say, the present invention The technical solution is not limited to the assembly methods listed above.

In another embodiment, when a multi-layer molecular film is formed on the surface of the resonator, the resonator can be deposited by different kinds of solutions, so that the different kinds of solutions can pass through multiple layers without external force. The molecular interaction force between the two solutions forms a multi-layer molecular film on the surface of the resonator.

Wherein, the deposition treatment method may be solution immersion, or spin coating, and of course other deposition treatment methods, which are not limited in the present invention.

In addition, in another embodiment, the solution may be an organic solution or an inorganic solution, and different solutions may be composed of two or more organic solutions, or may be composed of two Or two or more inorganic solutions, which is not limited in the present invention.

In addition, in one embodiment, the molecular interaction force between various solutions can be the interaction between organic molecules, or the interaction between inorganic molecules;

For the interaction between organic molecules, in practical applications, it can be the electrostatic force of positive and negative charges between organic molecules, such as: poly(acrylamine hydrochloride) and polyacrylic acid, polyethyleneimine and polyacrylic acid , polylysine and hyaluronic acid, poly(styrene sulfonate) and poly(allylamine hydrochloride), poly(diallyldimethylammonium chloride) and poly(styrene sulfonate ) etc.; it can also be hydrogen bonding between organic molecules, for example: tannic acid and polyvinylpyrrolidone, tannic acid and poly N-vinyl caprolactam, tannic acid and poly N-isopropylacrylamide, poly (4-vinylpyridine) and polyacrylic acid, etc.; it can also be the coordination bond between organic molecules; of course, it can also be other effects between organic molecules, as long as it can be formed on the surface of the resonator through the interaction between molecules A multi-layer molecular film is sufficient, and the present invention is not limited thereto.

For the interaction between inorganic molecules, in practical applications, it can be the interaction between inorganic molecules; it can also be the interaction of modified functional groups between inorganic substances, where the functional groups can be pre-completed for inorganic substances grooming.

In addition, in another embodiment, it is possible to adjust the concentration of each solution, the pH value of each solution, the deposition time of each solution on the surface of the resonator, and the number of times the solution is deposited on the resonator. The formation of multi-layer molecular films on the surface of the resonator achieves the purpose of adjusting the resonant frequency of the resonator.

However, it should be noted that in practical applications, when adjusting the resonant frequency of the resonator, the object of adjustment can be any one of the above-listed ones, or any combination, which is not limited in the present invention. In addition, In practical applications, the adjustment object may also be other unlisted factors affecting the formation of the multilayer molecular film, which is not limited in the present invention.

In another embodiment, before forming a multi-layer molecular film on the surface of the resonator, the resonance frequency regulation method may further include:

The resonator is modified with functional groups to form chemical functional groups on the surface of the resonator to realize the first layer deposition of the molecular film; The surface of the functional group resonator forms a multilayer molecular film, wherein the modified chemical functional group can be an amino group, a carboxyl group, or other chemical functional groups, as long as it can realize molecular self-assembly with the multilayer molecular film, so as to achieve The effect of enhancing the stability of the multilayer molecular film is sufficient, and the present invention is not limited thereto.

Wherein, before carrying out functional group modification to the resonator, the resonator can also be subjected to plasma treatment to form hydroxyl groups on the surface of the resonator, of course, it can also be other chemical groups, which is not limited in the present invention; and, with Correspondingly, when the functional group modification is performed on the resonator, the functional group modification is performed on the surface of the resonator on which hydroxyl groups have been formed.

Wherein, the method of functional group modification can be chemical vapor deposition, wet chemical method, or a combination of the two, and of course other functional group modification methods, which are not limited in the present invention.

In another embodiment, before forming a multi-layer molecular film on the surface of the resonator, the resonance frequency regulation method may further include:

Plasma treatment of the resonator to form hydroxyl groups on the surface of the resonator;

And, correspondingly, when a multilayer molecular film is formed on the surface of the resonator, a multilayer molecular film is formed on the surface of the resonator on which hydroxyl groups have been formed, so that the hydroxyl group and the multilayer molecular film realize molecular self-assembly.

In order to better understand the above-mentioned technical scheme of the present invention, the molecular self-assembly of polyacrylic acid and poly(4-vinylpyridine) is taken as an example below, and on the thin film bulk acoustic resonator, a multilayer molecular film is formed by molecular self-assembly technology , to further elaborate on the implementation method of adjusting the frequency of the resonator.

Fig. 2 is a cross-sectional view of a typical thin film bulk acoustic resonator. As shown in 200, where 201 is a silicon substrate, after depositing a layer of aluminum nitride seed layer 211, a layer of bottom electrode 212 will be deposited again, and then the most important layer of piezoelectric layer 213 will be on the bottom electrode Formed, this layer of piezoelectric layer is usually zinc oxide or aluminum nitride, now take aluminum nitride as an example. A layer of top electrode 214 is then deposited, thus forming a resonator with a sandwich structure formed by the bottom electrode, the piezoelectric layer and the top electrode. In order to realize the electrical insulation of the device and prevent the device from being oxidized, a layer of aluminum nitride 215 is usually deposited on the surface of the thin-film bulk acoustic wave as a passivation layer. Finally, in order to achieve gold wire bonding between the chip and the peripheral PCB, a layer of gold film 216 will be deposited on the device by photolithography. In the present invention, we just carry out amino modification on the aluminum nitride insulating layer 215 to realize the deposition of molecular self-assembled multilayer film.

Figure 3 is a representative flowchart for tuning frequency by deposition of molecularly self-assembled multilayer films on devices. As indicated by 300, the whole process is as follows: firstly, the thin film bulk acoustic resonator is cleaned 301 with absolute ethanol to remove some impurities on the surface, and dried 302 with nitrogen. Subsequently, the chip is put into a plasma cleaning machine 303, and its surface is lightly bombarded with plasma, and a layer of hydroxyl groups is formed on the surface of aluminum nitride during the bombardment process. Furthermore, the thin film bulk acoustic resonator was put into a vacuum desiccator for amino modification 304, and a small amount of liquid 3-aminopropyltriethoxysilane was put together. After the above steps, use a vacuum pump to evacuate the inside of the vacuum drier and maintain it for 12 hours, so that the liquid 3-aminopropyltriethoxysilane can be better volatilized to the surface of the aluminum nitride film containing hydroxyl groups, and with it A chemical reaction occurs to form an amino functional group. Finally, in order to form a more uniform and stable film, the film bulk acoustic resonator treated above is heated in a vacuum oven at 305 for a period of time. The characteristic of this method is that, after plasma treatment, no hydroxyl group will be formed on the gold surface, so 3-aminopropyltriethoxysilane will not be deposited on the surface of the gold pad, so that it is selectively deposited on the non-soldering surface. The location of the pad area will not be carried out on the pad area in the subsequent molecular self-assembled multilayer film deposition, which facilitates the gold wire bonding between the chip and the PCB. That is to say, this method avoids time-consuming and labor-intensive processes such as photolithography or stripping using a photolithography plate.

After the above treatment, the thin film bulk acoustic resonator is alternately soaked in ethanol solution 306 containing polyacrylic acid and in ethanol solution 308 containing poly(4-vinylpyridine), such soaking makes the carboxyl group of polyacrylic acid and poly(4- The pyridines of vinylpyridine) are bonded together through hydrogen bonds and form a thin film deposited on the surface of the aluminum nitride passivation layer, which will be cleaned with absolute ethanol 307 and 309 after each soaking. In this way, a two-layer molecular self-assembled film is formed, and a multilayer film structure is formed by cyclically soaking the film bulk acoustic resonator in polyacrylic acid and poly(4-vinylpyridine). The more the number of films, the higher the mass loading. Larger, the frequency change of the film bulk acoustic resonator is larger.

Figure 4 is a schematic diagram of a representative chemical reaction for the deposition of molecularly self-assembled multilayer films. As shown in 400, the hydroxyl group 401 is first generated by plasma bombardment on the surface of aluminum nitride, and then modified into amino group 402 by the reaction of 3-aminopropyltriethoxysilane and the hydroxyl group, and the generated amino group will be mixed with the ethanol solution containing polyacrylic acid The carboxyl groups of 403 are bonded together through hydrogen bonds, and the excess carboxyl groups will be further combined with the amino groups of the ethanol solution 404 containing poly(4-vinylpyridine) soaked in the next step through hydrogen bonds, thus forming a two-layer molecular self-assembly film.

Fig. 5 is a representative cross-sectional view of a molecular self-assembled multilayer film deposited on the surface of a thin-film bulk acoustic resonator. As shown at 500, on the basis of the structure of the thin film bulk acoustic resonator shown in FIG. 516 on.

In this embodiment, the present invention regulates the resonant frequency of the resonator by means of chemical modification and molecular self-assembly. This method forms hydroxyl groups on the surface of aluminum nitride materials through plasma treatment, and uses the method of vapor phase deposition to realize the chemical combination of silylating reagents and hydroxyl groups, forming a layer of amino functional groups on the surface of the device, and finally through the self-organization of molecules of two organic compounds. Assembled and deposited a layer of organic thin film on the surface of thin film bulk acoustic resonator as a mass load to adjust its resonant frequency. Its advantages are time-saving and labor-saving, low cost, simple operation, high frequency regulation accuracy, and because no hydroxyl group will be formed on the gold surface through plasma treatment, molecular self-assembly deposition will not be performed on the gold pad, eliminating the need for The photolithography process using a mask avoids the impact on the bonding wire connection, etc., and realizes selective deposition.

Wherein, in practical application, when realizing molecular self-assembled layered deposition, it can be carried out either manually or through professionally designed fully automatic equipment, which is not limited in the present invention.

In addition, in practical applications, the technical solution of the present invention can not only be applied to resonators, but also can be applied to the manufacture of qualified devices in other semiconductor manufacturing processes, which is not limited by the present invention.

According to an embodiment of the present invention, a resonator is also provided.

As shown in Figure 5, the resonator according to the embodiment of the present invention includes:

first electrode 512;

a piezoelectric layer 513, wherein at least a portion of the piezoelectric layer is disposed over the first electrode;

a second electrode 514, wherein at least a portion of the second electrode is disposed over the piezoelectric layer;

a surface (not shown), the first electrode, the piezoelectric layer and the second electrode are located below the surface;

The multi-layer molecular film 517 is located above the surface, wherein the multi-layer molecular film is used to adjust the resonant frequency of the resonator.

Wherein, in one embodiment, the multilayer molecular film 517 can be formed by molecular self-assembly technology, and the manner of molecular self-assembly includes at least one of the following:

Assemble polyacrylamine hydrochloride or allylamine hydrochloride with polyacrylic acid;

Assembly of polyethyleneimine and polyacrylic acid;

Assemble polylysine and hyaluronic acid;

Assembling polystyrene sulfonate or styrene sulfonate with polyallylamine hydrochloride or allylamine hydrochloride;

Assembling polydiallyldimethylammonium chloride or diallyldimethylammonium chloride with polystyrene sulfonate or styrene sulfonate;

Assembling tannic acid and polyvinylpyrrolidone;

Assembling tannic acid with poly-N-vinylcaprolactam;

Assembling tannic acid and poly-N-isopropylacrylamide;

Assemble poly-4-vinylpyridine or 4-vinylpyridine with polyacrylic acid.

And, in one embodiment, the type of the resonator may be a film bulk acoustic resonator, may also be a surface acoustic wave resonator, may also be a contour mode resonator, and of course may also be other resonators not listed, the present invention This is not limited.

Furthermore, in another embodiment, the constituent material of the piezoelectric layer 513 is selected from the group consisting of: zinc oxide, aluminum nitride.

In one embodiment, the resonator further comprises:

a substrate 501 defining a cavity;

a seed layer 511 disposed over the substrate 501, and at least a portion of the seed layer 511 disposed over the cavity in the substrate 501;

Also, the first electrode is disposed over the seed layer 511 .

Wherein, the substrate 501 is a silicon substrate.

Furthermore, in another embodiment, the constituent material of the seed layer 511 is selected from the group comprising aluminum nitride material.

Additionally, in one embodiment, the resonator further includes:

The passivation layer 515 is used to realize the electrical insulation of the resonator and prevent the resonator from being oxidized;

A gold thin film 516 is used to realize the bonding of the resonator and the PCB gold wire;

Wherein, the passivation layer 515 and the gold film 516 are located outside the first electrode 512 , the piezoelectric layer 513 and the second electrode 514 , and a multilayer molecular film 517 is formed on the outer surface of the passivation layer 515 .

Wherein, in one embodiment, the composition material of the passivation layer 515 is selected from the group comprising the following materials: aluminum nitride material, silicon material, silicon dioxide material, and quartz material.

In summary, with the help of the above technical solution of the present invention, by forming a multi-layer molecular film on the surface of the resonator, the regulation of the resonant frequency of the resonator can be realized simply and effectively through the formed multi-layer molecular film, and at the same time, it can save cost, and improve the accuracy of frequency control; in addition, the present invention through the plasma treatment of the surface of the resonator, so that the multi-layer molecular film has been selectively deposited on the surface of the resonator, avoiding the processing of the resonator on the bonding wire connection impact.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the scope of the present invention. within the scope of protection.

Claims (21)

1. a resonance frequency regulate and control method for resonator, is characterized in that, comprising:

One resonator is provided, and wherein, described resonator comprises piezoelectric layer and a plurality of electrode layer;

According to the resonance frequency requirement of expection, in described resonator surface, form multilayer molecular film, wherein, described multilayer molecular film is for adjusting the resonance frequency of described resonator.

2. resonance frequency regulate and control method according to claim 1, is characterized in that, forms multilayer molecular film comprise in described resonator surface:

By numerator self-assembly technique, in described resonator surface, form multilayer molecular film.

3. resonance frequency regulate and control method according to claim 2, is characterized in that, the mode that realizes molecular self-assembling comprise following one of at least:

By polypropylene amine hydrochloride or allylamine hydrochloride, assemble with polyacrylic acid;

Polymine and polyacrylic acid are assembled;

Poly-D-lysine and hyaluronic acid are assembled;

By poly styrene sulfonate or styrene sulfonate, assemble with polypropylene amine hydrochloride or allylamine hydrochloride;

By diallyl dimethyl ammoniumchloride or diallyldimethylammonium chloride, assemble with poly styrene sulfonate or styrene sulfonate;

Tannic acid and polyvinylpyrrolidone are assembled;

Tannic acid and poly N-vinyl caprolactam are assembled;

Tannic acid and poly-N-isopropyl acrylamide are assembled;

To gather 4-vinylpyridine or 4-vinylpyridine, assemble with polyacrylic acid.

4. resonance frequency regulate and control method according to claim 1, is characterized in that, forms multilayer molecular film comprise in described resonator surface:

By different multiple solution, described resonator is carried out respectively to deposition processes, make described different multiple solution under the effect that there is no external force, the interaction force by molecule between multiple solution forms multilayer molecular film in described resonator surface.

5. resonance frequency regulate and control method according to claim 4, is characterized in that, the mode of described deposition processes comprise following one of at least:

The mode of soaking by solution;

The mode of smearing by rotation.

6. resonance frequency regulate and control method according to claim 4, is characterized in that, when the resonance frequency of described resonator is adjusted, the object of adjustment comprise following one of at least:

The concentration of every kind of solution;

The hydrogen ion activity indices P H value of every kind of solution;

Every kind of time that solution deposits in described resonator surface;

Described resonator is carried out to the number of times of the deposition processes of solution.

7. resonance frequency regulate and control method according to claim 4, is characterized in that, described solution comprises organic solution or mineral solution, and described different multiple solution comprises at least two kinds of organic solutions or at least two kinds of mineral solutions.

8. resonance frequency regulate and control method according to claim 7, is characterized in that, between described multiple solution the interaction force of molecule comprise following one of at least:

Electrostatic interaction between organic molecule;

Hydrogen bond action between organic molecule;

Coordinate bond effect between organic molecule;

Interaction between inorganic matter molecule;

The interaction of the functional group of modifying between inorganic matter, wherein, completes modified with functional group in advance to described inorganic matter.

9. resonance frequency regulate and control method according to claim 1, is characterized in that, before described resonator surface forms multilayer molecular film, described resonance frequency regulate and control method further comprises:

Described resonator is carried out to modified with functional group, make the surface of described resonator form chemical functional group;

And, in described resonator surface, form multilayer molecular film and comprise:

On the surface that is formed with chemical functional group's described resonator, form multilayer molecular film, wherein, make described chemical functional group and described multilayer molecular film realize molecular self-assembling.

10. resonance frequency regulate and control method according to claim 9, is characterized in that, before described resonator is carried out to modified with functional group, described resonance frequency regulate and control method further comprises:

Described resonator is carried out to plasma treatment, make described resonator surface form hydroxyl;

And, described resonator is carried out to modified with functional group and comprises:

On the surface that is formed with the described resonator of hydroxyl, carry out modified with functional group.

11. resonance frequency regulate and control methods according to claim 9, is characterized in that, the mode of described modified with functional group comprise following one of at least:

Chemical vapour deposition (CVD); The mode of wet chemistry.

12. resonance frequency regulate and control methods according to claim 1, is characterized in that, before described resonator surface forms multilayer molecular film, described resonance frequency regulate and control method further comprises:

Described resonator is carried out to plasma treatment, make described resonator surface form hydroxyl;

And, in described resonator surface, form multilayer molecular film and comprise:

On the surface that is formed with the described resonator of hydroxyl, form multilayer molecular film, make described hydroxyl and described multilayer molecular film realize molecular self-assembling.

13. 1 kinds of resonators, is characterized in that, comprising:

The first electrode;

Piezoelectric layer, wherein, at least a portion of described piezoelectric layer is placed in described the first electrode top;

The second electrode, wherein, at least a portion of described the second electrode is placed in described piezoelectric layer top;

One surface, described the first electrode, described piezoelectric layer and described the second electrode are all positioned at the below on described surface;

Multilayer molecular film, is positioned at the top on described surface, and wherein, described multilayer molecular film is for adjusting the resonance frequency of described resonator.

14. resonators according to claim 13, is characterized in that, described multilayer molecular film forms by numerator self-assembly technique, the mode of molecular self-assembling comprise following one of at least:

By polypropylene amine hydrochloride or allylamine hydrochloride, assemble with polyacrylic acid;

Polymine and polyacrylic acid are assembled;

Poly-D-lysine and hyaluronic acid are assembled;

By poly styrene sulfonate or styrene sulfonate, assemble with polypropylene amine hydrochloride or allylamine hydrochloride;

By diallyl dimethyl ammoniumchloride or diallyldimethylammonium chloride, assemble with poly styrene sulfonate or styrene sulfonate;

Tannic acid and polyvinylpyrrolidone are assembled;

Tannic acid and poly N-vinyl caprolactam are assembled;

Tannic acid and poly-N-isopropyl acrylamide are assembled;

To gather 4-vinylpyridine or 4-vinylpyridine, assemble with polyacrylic acid.

15. resonators according to claim 13, is characterized in that, the type of described resonator comprises thin film bulk acoustic resonator, SAW (Surface Acoustic Wave) resonator, outline mode resonator.

16. resonators according to claim 13, is characterized in that, the composition material of described piezoelectric layer is selected from the group that comprises following material: zinc oxide, aluminium nitride.

17. resonators according to claim 13, is characterized in that, further comprise:

Define the substrate of cavity;

Seed Layer, is placed in described substrate top, and at least a portion of described Seed Layer is placed in the described cavity top in described substrate;

And described the first electrode arrangement is above described Seed Layer.

18. resonators according to claim 17, is characterized in that, described substrate is silicon substrate.

19. resonators according to claim 17, is characterized in that, the composition material of described Seed Layer is selected from the group that comprises following material: aluminium nitride material.

20. resonators according to claim 13, is characterized in that, further comprise:

Passivation layer, for realizing the electrical insulation of resonator, and prevents that described resonator is oxidized;

Gold thin film, for realizing the bonding of described resonator and peripheral printing board PCB gold thread;

Wherein, described passivation layer and described gold thin film are all positioned at beyond described the first electrode, described piezoelectric layer and described the second electrode, and described multilayer molecular film-shaped is formed in the outer surface of described passivation layer.

21. resonators according to claim 20, is characterized in that, the composition material of described passivation layer is selected from the group that comprises following material: aluminium nitride material, silicon materials, earth silicon material, quartz material.