CN101859757B - Stack light-emitting diode chip structure and manufacturing method thereof - Google Patents

Abstract

The invention discloses a stack light emitting diode chip structure, comprising: the two semiconductor epitaxial layers are arranged on the substrate at intervals; and the flip chip type light emitting diode chip is arranged between the two semiconductor epitaxial layers and is electrically connected with the two semiconductor epitaxial layers. The invention also discloses a manufacturing method of the stacked light-emitting diode chip structure, and a substrate is provided; the two semiconductor epitaxial layers are separately arranged on the substrate; and arranging a flip-chip light-emitting diode chip on the two semiconductor epitaxial layers, and electrically connecting the flip-chip light-emitting diode chip with the two semiconductor epitaxial layers. The invention can improve the light-emitting area under the fixed area.

Description

Stacked light-emitting diode chip structure and its manufacturing method

technical field

The invention relates to the field of light-emitting diodes, in particular to a stacked light-emitting diode chip structure; the invention also relates to a manufacturing method of the stacked light-emitting diodes.

Background technique

LED Light Emitting Diode (LED Light Emitting Diode) is a light-emitting component made of semiconductor materials. The component has two electrode terminals, a voltage is applied between the two electrode terminals, a very small current is passed through, and the remaining energy can be excited and released in the form of light through the combination of electron holes, which is the basic light-emitting principle of light-emitting diodes. . Light-emitting diodes are different from ordinary incandescent light bulbs. Light-emitting diodes are cold-emitting, with low power consumption, long component life, no need for warm-up time, and fast response. In addition, they are small in size, vibration-resistant, and suitable for mass production. , It is easy to make extremely small or arrayed components according to the application requirements. At present, light-emitting diodes have been widely used in indicators and display devices of information, communication and consumer electronics products, and have become an indispensable and important component in daily life.

There are many disclosures about light-emitting diodes in many prior arts, such as China Taiwan Patent Publication No. 408497 "Light Emitting Diode Lighting Device", Taiwan Patent Publication No. 452202 "Sealed Light-Emitting Diode Lighting Device" and Taiwan Patent Publication No. No. 512548 "Light Emitting Diode Illuminator" is disclosed. The technologies disclosed in the aforementioned announcements focus more on using the light of multiple LEDs as a light source for lighting. The main progressive technology still focuses on how to use the most suitable layout of multiple LEDs to achieve Achieve better luminous efficiency and improve brightness. However, in the actual production and manufacturing of the disclosed technologies, problems arising from mass assembly will be faced, because most of the aforementioned technologies must use a plurality of single light-emitting diodes arranged in a rectangular array or a circular array. Only then can the luminous area be increased; how to increase the luminous area per unit area is really a major issue.

Furthermore, in terms of luminous efficiency, the power that the light-emitting diode can withstand is an important factor. When the light-emitting diode can withstand high-power applications, the brightness of a single light-emitting diode can be increased upwards. Further, the application range of the light-emitting diode can be effectively increased, especially for lighting; therefore, how to improve the brightness of the light-emitting diode is a very important subject. As for power improvement, the first problem to be overcome is how to eliminate or reduce the increase in operating temperature of the light-emitting diode after the current is turned on? Looking at the data disclosed in the aforementioned technologies, it can be found that the heat dissipation design of most LEDs is more than completed during packaging, that is, an external heat sink with heat dissipation function is connected during packaging. For example, China Taiwan Patent Publication No. 518775 "Liquid-Cooled Light-Emitting Diode and Its Packaging Method" discloses related technologies, and Taiwan Patent Publication No. 508833 "Direct Cooling Light-Emitting Diode" also discloses related technologies. This type of heat dissipation design aims to use an external heat dissipation design, such as adding an airtight cover to fill liquid or gas, etc., so that the operating temperature of the LED after the current conduction can be dissipated by this heat dissipation design, and then The working temperature will not be too high, so that the light-emitting diode can withstand high-power applications without light attenuation, so as to ensure its applicability. However, although the external design can achieve the purpose of heat dissipation, it also increases the processing procedures during packaging, and whether the external heat dissipation design can be effectively combined with packaging will inevitably become another burden in the quality inspection process.

In addition, please refer to FIG. 1 , which is a schematic structural diagram of a conventional front-side light-emitting diode disposed on a carrier board. As shown in the figure, the substrate of the light-emitting diode is generally arranged on the carrier board, and the two LED chips have a certain distance, so that the area of the carrier board is not equal to the light-emitting area, which reduces the usability. FIG. 2 is a schematic structural diagram of a flip-chip LED disposed on a carrier board in the prior art; the same problem exists with the structure shown in FIG. 1 , and the area of the carrier board is not equal to the light emitting area.

In view of the above problems, the prior art aims to increase the luminous efficiency of a single chip, because the problem of heat dissipation has not been solved, so the light attenuation after increasing the efficiency cannot be solved. Improving the light emitting area is actually one of the problems to be solved in the current industry. The light emitting diode chip set provided by the present invention does not aim at improving the light emitting efficiency of a single crystal grain.

Contents of the invention

The technical problem to be solved by the present invention is to provide a stacked light-emitting diode chip structure to increase the light-emitting area under a fixed area; for this purpose, the present invention also provides a manufacturing method of the stacked light-emitting diode chip structure.

In order to solve the above-mentioned technical problems, the stacked LED chip structure of the present invention includes:

A substrate on which two semiconductor epitaxial layers are spaced apart;

A flip-chip light-emitting diode chip is arranged between the two semiconductor epitaxial layers and electrically connected with the two semiconductor epitaxial layers.

The manufacturing method of the stacked light-emitting diode chip structure is realized by adopting the following technical scheme:

providing a substrate;

disposing two semiconductor epitaxial layers separately on the substrate; and

A flip-chip light-emitting diode chip is arranged on the two semiconductor epitaxial layers, and the flip-chip light-emitting diode chip is electrically connected with the two semiconductor epitaxial layers.

The stacked light-emitting diode and its manufacturing method of the present invention use two front-emitting light-emitting diode chips and a flip-chip light-emitting diode chip to be stacked in a stacked manner, thereby increasing the utilization area arranged on a substrate, and the substrate can be increased. overall luminous area.

Description of drawings

Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

FIG. 1 is a schematic structural view of an existing front light-emitting diode arranged on a carrier board;

FIG. 2 is a schematic structural view of an existing flip-chip light-emitting diode disposed on a carrier board;

Fig. 3 is a schematic structural view of Embodiment 1 of the present invention;

4A to 4D are the manufacturing flowchart of the embodiment shown in FIG. 3;

Fig. 5 is a schematic structural diagram of Embodiment 2 of the present invention;

Fig. 6 is a schematic structural diagram of Embodiment 3 of the present invention.

Explanation of symbols in the figure:

10 is the substrate; 20 is the first semiconductor epitaxial layer; 211 is the first semiconductor layer;

212 is the first light-emitting layer; 213 is the second semiconductor layer; 214 is the first electrode;

215 is the second electrode; 30 is the second semiconductor epitaxial layer; 311 is the first semiconductor layer;

312 is the first light-emitting layer; 313 is the second semiconductor layer; 314 is the first electrode;

315 is the second electrode; 40 is the flip-chip light-emitting diode chip; 41 is the third semiconductor layer;

42 is the second light-emitting layer; 43 is the fourth semiconductor layer; 44 is the transparent substrate;

45 is the third electrode; 46 is the fourth electrode; 50 is the first bump;

60 is the second bump; D is the separation distance.

Detailed ways

In the prior art, the light-emitting diode chips are fixed on a carrier board by front-side or flip-chip method, and they must be spaced apart, so that the area of the carrier board is not equal to the light-emitting area, resulting in low luminous brightness per unit area; the present invention The purpose of the invention is to solve the problems in the prior art and provide a stacked light-emitting diode capable of increasing the light-emitting area and a manufacturing method thereof.

Refer to Embodiment 1 of the stacked light emitting diode chip structure of the present invention shown in FIG. 3 . As shown in the figure, in this embodiment, the stacked LED includes a substrate 10 , two semiconductor epitaxial layers 20 , 30 of front-emitting type, and a flip-chip LED chip 40 . Wherein, the two semiconductor epitaxial layers 20 , 30 are disposed on the substrate 10 and separated from each other with a distance D between them. The electrodes of the flip-chip LED chip 40 are electrically connected to the electrodes of the two semiconductor epitaxial layers 20 , 30 , and the flip-chip LED chip 40 is not in contact with the substrate 10 .

The structure of the first semiconductor epitaxial layer 20 and the second semiconductor epitaxial layer 30 includes a first semiconductor layer 211, 311, a first light emitting layer 212, 312 and a second semiconductor layer 213, 313 from bottom to top, and according to sequentially stacked on the substrate 10; also includes a first electrode 214, 314 and a second electrode 215, 315, the first electrode 214, 314 is disposed on the first semiconductor layer 211, 311, the second The electrodes 215 , 315 are disposed on the second semiconductor layer 213 , 313 .

The flip chip LED chip 40 includes a third semiconductor layer 41 , a second light emitting layer 42 and a fourth semiconductor layer 43 from bottom to top; it also includes a third electrode 45 and a fourth electrode 46 . The third electrode 45 is disposed under the fourth semiconductor layer 43 , and the fourth electrode 46 is disposed under the third semiconductor layer 41 .

The first electrode 214 of the first semiconductor epitaxial layer 20 is electrically connected to the fourth electrode 46 of the flip-chip light emitting diode chip 40 by a first bump 50; the second electrode 315 of the second semiconductor epitaxial layer 30 is connected to the flip-chip light emitting The third electrode 45 of the diode chip 40 is electrically connected with a second bump 60 .

The two semiconductor epitaxial layers 20 and 30 have the same single color light as the flip-chip LED chip 40 or have at least two or more color lights. For example: the two semiconductor epitaxial layers 20, 30 and the flip-chip light emitting diode chip 40 are both white light, or the two semiconductor epitaxial layers 20, 30 and the flip-chip light emitting diode chip 40 are respectively three primary colors or blue light and yellow light, and The light emission wavelengths of the two semiconductor epitaxial layers 20 and 30 are smaller than the light emission wavelength of the flip-chip light emitting diode chip 40 .

Referring again to FIGS. 4A to 4D , the manufacturing process of Embodiment 1 of the present invention shown in FIG. 3 includes the following steps (the present invention is a method for manufacturing a hybrid crystal-bonded light-emitting diode):

Provide a substrate 10 (see FIG. 4A);

Separate epitaxy to form two semiconductor epitaxial layers 20, 30 on the substrate 10 (see FIG. 4B);

A flip-chip LED chip 40 is provided, and a first bump 50 and a second bump 60 are in contact with the two semiconductor epitaxial layers 20, 30, and the three are electrically connected (see FIG. 4C ).

A transparent substrate 44 of the flip-chip LED chip 40 is removed. The light emitting surface of the fourth semiconductor layer 43 of the flip-chip LED chip 40 has a roughened structure (see FIG. 4D ).

The epitaxial method of the two semiconductor epitaxial layers 20, 30 and the flip-chip light emitting diode chip 40, from the substrate, the first semiconductor layer, the light emitting layer, the second semiconductor layer, the first electrode and the second electrode It is prior art and not a technical feature of the present invention, so it will not be described in detail.

In addition, if the steps shown in FIG. 4D are not performed, the hybrid die-bonding light-emitting diode of the present invention further includes a transparent substrate 44, as shown in FIG. 5 , which is the second embodiment of the present invention. diode.

When a plurality of semiconductor epitaxial layers 20, 30 are electrically connected to a plurality of flip-chip LED chips 40, a bridge can be formed between the semiconductor epitaxial layers 20, 30 and the flip-chip LED chips 40 in series. Type rectification structure, or form a bridge rectification structure according to parallel electrical connection, or form a bridge rectification structure according to series parallel electrical connection, or form a bridge type AC light emitting device or full wave AC light emitting device according to series electrical connection , or form a bridge-type AC light emitting device or a full-wave AC light-emitting device according to a parallel electrical connection, or form a bridge-type AC light-emitting device or a full-wave AC light-emitting device through a series-parallel electrical connection.

Finally, please refer to FIG. 6 , the third embodiment of stacked light emitting diodes of the present invention. It differs from the structure of the aforementioned embodiments in that it is connected in series and in parallel. The first electrode 214 of the first semiconductor epitaxial layer 20 is electrically connected to the third electrode 45 of the flip-chip LED chip 40 by a first bump 50, and the second electrode 315 of the second semiconductor epitaxial layer 30 is connected to the flip-chip LED chip 40 electrically. The fourth electrode 46 of the LED chip 40 is electrically connected with a second bump 60 .

The present invention has been described in detail through the above examples, but these are not intended to limit the present invention. Without departing from the principle of the present invention, those skilled in the art can also make many modifications and improvements, which should also be regarded as the protection scope of the present invention.

Claims (24)

1. a stack light-emitting diode chip structure, is characterized in that, comprising:

One substrate, two semiconductor epitaxial layers are arranged on this substrate separately;

One crystal-coated light-emitting diodes chip, is arranged between described two semiconductor epitaxial layers, and is electrically connected to these two semiconductor epitaxial layers;

Wherein, described crystal-coated light-emitting diodes chip is that the mode being stacked is arranged on described two semiconductor epitaxial layers.

2. stack light-emitting diode chip structure as claimed in claim 1, is characterized in that: described two semiconductor epitaxial layers are divided into the first semiconductor epitaxial layers and the second semiconductor epitaxial layers, and it from bottom to top comprises respectively:

One first semiconductor layer, is arranged on described substrate;

One first luminescent layer, is arranged on described the first semiconductor layer; And

One second semiconductor layer, is arranged on described the first luminescent layer;

Also comprise one first electrode and one second electrode, this first electrode is arranged on described the first semiconductor layer, and this second electrode is arranged on described the second semiconductor layer.

3. stack light-emitting diode chip structure as claimed in claim 1, is characterized in that: described crystal-coated light-emitting diodes chip from bottom to top comprises:

One the 3rd semiconductor layer;

One second luminescent layer, is arranged on described the 3rd semiconductor layer; And

One the 4th semiconductor layer, is arranged on described the second luminescent layer;

Also comprise a third electrode and one the 4th electrode, this third electrode is arranged under described the 4th semiconductor layer, and the 4th electrode is arranged under described the 3rd semiconductor layer.

4. stack light-emitting diode chip structure as claimed in claim 2, is characterized in that: described crystal-coated light-emitting diodes chip from bottom to top comprises:

One the 3rd semiconductor layer;

One second luminescent layer, is arranged on described the 3rd semiconductor layer; And

One the 4th semiconductor layer, is arranged on described the second luminescent layer;

Also comprise a third electrode and one the 4th electrode, this third electrode is arranged under described the 4th semiconductor layer, and the 4th electrode is arranged under described the 3rd semiconductor layer;

The first electrode of described the first semiconductor epitaxial layers is connected with the third electrode of crystal-coated light-emitting diodes chip, and the second electrode of described the second semiconductor epitaxial layers is connected with the 4th electrode of crystal-coated light-emitting diodes chip.

5. stack light-emitting diode chip structure as claimed in claim 2, is characterized in that: described crystal-coated light-emitting diodes chip from bottom to top comprises:

One the 3rd semiconductor layer;

One second luminescent layer, is arranged on described the 3rd semiconductor layer; And

One the 4th semiconductor layer, is arranged on described the second luminescent layer;

Also comprise a third electrode and one the 4th electrode, this third electrode is arranged under described the 4th semiconductor layer, and the 4th electrode is arranged under described the 3rd semiconductor layer;

The first electrode of described the first semiconductor epitaxial layers is connected with the 4th electrode of crystal-coated light-emitting diodes chip, and the second electrode of described the second semiconductor epitaxial layers is connected with the third electrode of crystal-coated light-emitting diodes chip.

6. stack light-emitting diode chip structure as claimed in claim 2 or claim 3, is characterized in that: described two semiconductor epitaxial layers have identical single colored light with crystal-coated light-emitting diodes chip.

7. stack light-emitting diode chip structure as claimed in claim 2 or claim 3, is characterized in that: described two semiconductor epitaxial layers and crystal-coated light-emitting diodes chip have at least two kinds of above coloured light.

8. stack light-emitting diode chip structure as claimed in claim 2 or claim 3, is characterized in that: the emission wavelength of described two semiconductor epitaxial layers is less than the emission wavelength of crystal-coated light-emitting diodes chip.

9. stack light-emitting diode chip structure as claimed in claim 3, is characterized in that: described crystal-coated light-emitting diodes chip also comprises a transparency carrier, and this transparency carrier is positioned on the 4th semiconductor layer.

10. stack light-emitting diode chip structure as claimed in claim 3, is characterized in that: the exiting surface of described the 4th semiconductor layer is a matsurface.

11. stack light-emitting diode chip structures as claimed in claim 1, it is characterized in that: described semiconductor epitaxial layers is multipair, described crystal-coated light-emitting diodes chip is a plurality of, each is electrically connected to a crystal-coated light-emitting diodes chip respectively semiconductor epitaxial layers, forms a plurality of stack light-emitting diode chips.

12. stack light-emitting diode chip structures as claimed in claim 11, is characterized in that: described a plurality of stack light-emitting diode chips form a bridge rectifier structure according to being electrically connected in series.

13. stack light-emitting diode chip structures as claimed in claim 11, is characterized in that: described a plurality of stack light-emitting diode chips form a bridge rectifier structure according in parallel electrical connection.

14. stack light-emitting diode chip structures as claimed in claim 11, is characterized in that: described a plurality of stack light-emitting diode chips are electrically connected to and form a bridge rectifier structure according to connection in series-parallel.

15. stack light-emitting diode chip structures as claimed in claim 11, is characterized in that: described a plurality of stack light-emitting diode chips form a bridge-type AC illuminator or all-wave AC illuminator according to being electrically connected in series.

16. stack light-emitting diode chip structures as claimed in claim 11, is characterized in that: described a plurality of stack light-emitting diode chips form a bridge-type AC illuminator or all-wave AC illuminator according in parallel electric connection.

17. stack light-emitting diode chip structures as claimed in claim 11, is characterized in that: described a plurality of stack light-emitting diode chips are electrically connected to and form a bridge-type AC illuminator or all-wave AC illuminator according to connection in series-parallel.

The manufacture method of 18. 1 kinds of stack light-emitting diode chip structures, is characterized in that:

One substrate is provided;

Two semiconductor epitaxial layers are separated mutually and are arranged on described substrate; And

One crystal-coated light-emitting diodes chip is set on described two semiconductor epitaxial layers, and this crystal-coated light-emitting diodes chip is electrically connected to described two semiconductor epitaxial layers;

Wherein, described crystal-coated light-emitting diodes chip is that the mode being stacked is arranged on described two semiconductor epitaxial layers.

19. manufacture methods as claimed in claim 18, is characterized in that: described semiconductor epitaxial layers comprises the first semiconductor epitaxial layers and the second semiconductor epitaxial layers, following steps for manufacturing:

Form one first semiconductor layer on described substrate;

Form one first luminescent layer on described the first semiconductor layer; And

Form one second semiconductor layer on described the first luminescent layer;

Also comprise the step that forms one first electrode and one second electrode, described the first electrode is arranged on described the first semiconductor layer, and described the second electrode is arranged on the second semiconductor layer.

20. manufacture methods as claimed in claim 18, is characterized in that: described crystal-coated light-emitting diodes chip following steps for manufacturing:

Form one the 3rd semiconductor layer;

Form one second luminescent layer on described the 3rd semiconductor layer;

Form one the 4th semiconductor layer on described the second luminescent layer; And

Form a third electrode and one the 4th electrode, this third electrode is arranged under described the 4th semiconductor layer, and the 4th electrode is arranged under described the 3rd semiconductor layer.

21. manufacture methods as claimed in claim 19, is characterized in that: described crystal-coated light-emitting diodes chip following steps for manufacturing:

Form one the 3rd semiconductor layer;

Form one second luminescent layer on described the 3rd semiconductor layer;

Form one the 4th semiconductor layer on described the second luminescent layer; And

Form a third electrode and one the 4th electrode, this third electrode is arranged under described the 4th semiconductor layer, and the 4th electrode is arranged under described the 3rd semiconductor layer;

Described crystal-coated light-emitting diodes chip is implemented to be electrically connected to as follows to carry out with two semiconductor epitaxial layers:

Connect the first electrode of described the first semiconductor epitaxial layers and the third electrode of crystal-coated light-emitting diodes chip; And

Connect the second electrode of described the second semiconductor epitaxial layers and the 4th electrode of crystal-coated light-emitting diodes chip.

22. manufacture methods as claimed in claim 19, is characterized in that: described crystal-coated light-emitting diodes chip following steps for manufacturing:

Form one the 3rd semiconductor layer;

Form one second luminescent layer on described the 3rd semiconductor layer;

Form one the 4th semiconductor layer on described the second luminescent layer; And

Form a third electrode and one the 4th electrode, this third electrode is arranged under described the 4th semiconductor layer, and the 4th electrode is arranged under described the 3rd semiconductor layer;

Described crystal-coated light-emitting diodes chip is implemented to be electrically connected to as follows to carry out with two semiconductor epitaxial layers:

Connect the first electrode of described the first semiconductor epitaxial layers and the 4th electrode of crystal-coated light-emitting diodes chip; And

Connect the second electrode of described the second semiconductor epitaxial layers and the third electrode of crystal-coated light-emitting diodes chip.

23. manufacture methods as claimed in claim 20, is characterized in that: also comprise and form the step of a transparency carrier on described the 4th semiconductor layer.

24. manufacture methods as claimed in claim 20, is characterized in that: also comprise an alligatoring step: the exiting surface of the 4th semiconductor layer described in alligatoring.

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