CN101625895B - 内部电压发生电路 - Google Patents
内部电压发生电路 Download PDFInfo
- Publication number
- CN101625895B CN101625895B CN200910158601.4A CN200910158601A CN101625895B CN 101625895 B CN101625895 B CN 101625895B CN 200910158601 A CN200910158601 A CN 200910158601A CN 101625895 B CN101625895 B CN 101625895B
- Authority
- CN
- China
- Prior art keywords
- circuit
- clock signal
- voltage
- charge pump
- pump circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Power Sources (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008179566A JP5142861B2 (ja) | 2008-07-09 | 2008-07-09 | 内部電圧発生回路 |
JP2008179566 | 2008-07-09 | ||
JP2008-179566 | 2008-07-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101625895A CN101625895A (zh) | 2010-01-13 |
CN101625895B true CN101625895B (zh) | 2014-01-01 |
Family
ID=41504622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910158601.4A Active CN101625895B (zh) | 2008-07-09 | 2009-07-07 | 内部电压发生电路 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7969231B2 (zh) |
JP (1) | JP5142861B2 (zh) |
CN (1) | CN101625895B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101712070B1 (ko) * | 2010-05-06 | 2017-03-06 | 삼성디스플레이 주식회사 | 전압 발생회로 및 이를 구비한 표시장치 |
US8085086B1 (en) * | 2010-07-20 | 2011-12-27 | Macronix International Co., Ltd. | Non-volatile memory device and charge pump circuit for the same |
US8258857B2 (en) * | 2010-08-25 | 2012-09-04 | Summit Microelectronics, Inc. | Charge pump circuits and methods |
US8482340B2 (en) * | 2011-11-04 | 2013-07-09 | Texas Instruments Incorporated | Master-slave low-noise charge pump circuit and method |
FR3007857B1 (fr) * | 2013-06-26 | 2018-11-16 | Stmicroelectronics (Rousset) Sas | Regulateur pour circuit integre |
KR102299324B1 (ko) * | 2014-12-19 | 2021-09-08 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그의 구동방법 |
US9467154B2 (en) * | 2015-01-12 | 2016-10-11 | Microchip Technology Incorporated | Low power and integrable on-chip architecture for low frequency PLL |
KR20160094658A (ko) * | 2015-02-02 | 2016-08-10 | 에스케이하이닉스 주식회사 | 내부전압 생성회로, 반도체 장치 및 반도체 시스템 |
US11190182B2 (en) * | 2017-02-13 | 2021-11-30 | Skyworks Solutions, Inc. | Control circuitry for silicon-on-insulator chip |
JP7103888B2 (ja) * | 2018-08-08 | 2022-07-20 | エイブリック株式会社 | クロック波高値ブースト回路 |
US11114938B1 (en) * | 2020-08-28 | 2021-09-07 | Apple Inc. | Analog supply generation using low-voltage digital supply |
US11955196B2 (en) * | 2022-07-13 | 2024-04-09 | Nanya Technology Corporation | Memory device, voltage generating device and voltage generating method thereof |
CN115882839A (zh) * | 2022-12-19 | 2023-03-31 | 锐石创芯(深圳)科技股份有限公司 | 信号输出系统及电子设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1466764A (zh) * | 2000-07-25 | 2004-01-07 | 恩益禧电子股份有限公司 | 内部电压电平控制电路和半导体存储装置以及其控制方法 |
CN1551236A (zh) * | 2003-05-19 | 2004-12-01 | ������������ʽ���� | 电压发生电路 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57110076A (en) * | 1980-12-25 | 1982-07-08 | Mitsubishi Electric Corp | Booster circuit |
KR100271840B1 (ko) * | 1997-08-27 | 2000-11-15 | 다니구찌 이찌로오 | 회로 면적의 증대를 억제하면서 복수의 전위를 출력할 수 있는내부 전위 발생 회로 |
US5940284A (en) * | 1997-12-18 | 1999-08-17 | Zilog, Inc. | Low voltage charge pump circuit |
JP2000236657A (ja) * | 1999-02-15 | 2000-08-29 | Nec Kyushu Ltd | 昇圧回路 |
US6278317B1 (en) * | 1999-10-29 | 2001-08-21 | International Business Machines Corporation | Charge pump system having multiple charging rates and corresponding method |
JP4223270B2 (ja) * | 2002-11-19 | 2009-02-12 | パナソニック株式会社 | 昇圧回路およびそれを内蔵した不揮発性半導体記憶装置 |
US6980045B1 (en) * | 2003-12-05 | 2005-12-27 | Xilinx, Inc. | Merged charge pump |
JP4315981B2 (ja) * | 2004-12-03 | 2009-08-19 | ローム株式会社 | チャージポンプ回路の駆動回路および電源装置ならびに発光装置 |
JP2007199210A (ja) * | 2006-01-24 | 2007-08-09 | Seiko Epson Corp | 半導体集積回路 |
US7348829B2 (en) * | 2006-03-24 | 2008-03-25 | Intersil Americas Inc. | Slew rate control of a charge pump |
JP2008011649A (ja) * | 2006-06-29 | 2008-01-17 | Toshiba Microelectronics Corp | 半導体集積回路装置 |
US7579902B2 (en) * | 2006-12-11 | 2009-08-25 | Atmel Corporation | Charge pump for generation of multiple output-voltage levels |
KR100858875B1 (ko) * | 2007-04-18 | 2008-09-17 | 주식회사 하이닉스반도체 | 내부전원 생성장치 |
KR100915816B1 (ko) * | 2007-10-04 | 2009-09-07 | 주식회사 하이닉스반도체 | 내부 전압 생성 회로 |
-
2008
- 2008-07-09 JP JP2008179566A patent/JP5142861B2/ja active Active
-
2009
- 2009-07-02 US US12/497,090 patent/US7969231B2/en active Active
- 2009-07-07 CN CN200910158601.4A patent/CN101625895B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1466764A (zh) * | 2000-07-25 | 2004-01-07 | 恩益禧电子股份有限公司 | 内部电压电平控制电路和半导体存储装置以及其控制方法 |
CN1551236A (zh) * | 2003-05-19 | 2004-12-01 | ������������ʽ���� | 电压发生电路 |
Also Published As
Publication number | Publication date |
---|---|
US20100007408A1 (en) | 2010-01-14 |
JP2010022119A (ja) | 2010-01-28 |
US7969231B2 (en) | 2011-06-28 |
JP5142861B2 (ja) | 2013-02-13 |
CN101625895A (zh) | 2010-01-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101625895B (zh) | 内部电压发生电路 | |
US7439792B2 (en) | High voltage generation circuit and semiconductor device having the same | |
US8026755B2 (en) | Signal output apparatus, charge pump, voltage doubler and method for outputting current | |
CN102360565B (zh) | 电荷泵系统及用其产生读写操作字线电压的方法、存储器 | |
JP2010283992A (ja) | 電源電圧生成回路、及び半導体装置 | |
US8742833B2 (en) | Charge pump circuit and method thereof | |
JP2010119226A (ja) | チャージポンプ回路 | |
KR20120031940A (ko) | 회로 노드를 충전하고 방전하기 위한 방법 및 회로 | |
WO2015094374A1 (en) | Apparatus for charge recovery during low power mode | |
CN101340144B (zh) | 升压电路和升压方法 | |
US7724073B2 (en) | Charge pump circuit | |
US8319531B2 (en) | Multi-phase clock divider circuit | |
JP5779680B2 (ja) | 起動シーケンス制御方法及びそれを使用する低電流電源を有する装置 | |
TWI520490B (zh) | 高電壓產生器及產生高電壓之方法 | |
JP6756590B2 (ja) | 昇圧回路及びそれを備えた不揮発性メモリ | |
US8779845B2 (en) | Semiconductor apparatus | |
KR20170104787A (ko) | 차지 펌프 회로 및 이를 포함하는 내부 전압 생성 회로 | |
US20230261574A1 (en) | Voltage regulator comprising a charge pump circuit | |
JP5760784B2 (ja) | 電圧生成回路、半導体装置及び電圧生成回路の制御方法 | |
JP2972723B2 (ja) | 半導体集積回路 | |
KR100877623B1 (ko) | 피크 전류와 전원 노이즈를 감소시키기 위한 고전압발생회로와 그 방법 | |
KR0154290B1 (ko) | 챠지펌프 회로 | |
KR101005128B1 (ko) | 반도체 소자의 차지 펌프 회로 | |
US7642839B2 (en) | Current consumption prevention apparatus of a high voltage generator | |
JP7091113B2 (ja) | 半導体装置、および半導体装置の制御方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200828 Address after: Kyoto Japan Patentee after: Panasonic semiconductor solutions Co.,Ltd. Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: Kyoto Japan Patentee after: Nuvoton Technology Corporation Japan Country or region after: Japan Address before: Kyoto Japan Patentee before: Panasonic semiconductor solutions Co.,Ltd. Country or region before: Japan |
|
CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240529 Address after: 825 Waterscreek Avenue, Unit 250, Block M, Allen, Texas 75013, United States Patentee after: Advanced Storage Technology Co.,Ltd. Country or region after: U.S.A. Address before: Kyoto Japan Patentee before: Nuvoton Technology Corporation Japan Country or region before: Japan |
|
TR01 | Transfer of patent right |