CN101533663B - Method for improving flash memory medium data access speed - Google Patents
Method for improving flash memory medium data access speed Download PDFInfo
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- CN101533663B CN101533663B CN200810007361.3A CN200810007361A CN101533663B CN 101533663 B CN101533663 B CN 101533663B CN 200810007361 A CN200810007361 A CN 200810007361A CN 101533663 B CN101533663 B CN 101533663B
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- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
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Abstract
The invention provides a method for improving flash memory medium data access speed. The method comprises the following steps: acquiring flash memory character of a flash memory medium; receiving commands written in configuration parameters; executing the commands written in the configuration parameters, writing the flash memory character in an interior information record chart; writing information for controlling data access, formatting the flash memory medium; binding a physical block according to the configuration parameters; and performing data manipulation to the bound physical block. The method for improving flash memory medium data access speed can unify a variety of multi-plate flash memory mediums produced by various manufacturers so as to form a unified general management module for configuration management; and according to the configuration, the page and bock are bound in a flexible and logical manner, so that the read-write speed is improved to the utmost, and the data processing capability of the master control of a storage device is improved.
Description
Technical field
The present invention relates to semiconductor storage medium field, particularly a kind of method that improves flash memory medium data access speed.
Background technology
Along with the development of semiconductor memory technologies, the flash media of usining is as comparatively universal in flash disk as the memory storage of data storage medium, and the prime cost of this type of memory storage is flash media chip.And the producer that produces flash media chip is more and more, also may there is larger difference in the type of the flash media chip of each manufacturer production and the technology of using, the technology that is intended to improve flash media chip data read or write speed is also to constantly update, as outside intersects read-write technology (interleave), internal chiasma read-write technology, multistage read-write technology (two plane) etc.
As previously mentioned, there is the technology of multiple raising reading and writing data speed in flash media itself, but the type of the flash media that different manufacturers produce and the reading and writing data technology adopting are not identical, there is each other situation incompatible or that do not support, as the reading and writing data technology of supporting Toshiba (Toshiba) flash media just do not support Samsung (Samsung), support the reading and writing data technology of magnesium light (Micron) flash media just not support the modern times (Hyundai).Based on above reason, when a certain memory storage comprises flash media chip that two or more different manufacturers are produced or polylith flash media chip, cannot improve by the Data Access Technology of each self-supporting the data access speed of this memory storage.
Summary of the invention
The invention provides a kind of method that improves flash memory medium data access speed, comprising:
Obtain the step of the flash memory characteristic of flash media;
Reception writes the order of configuration parameter;
Execution writes the order of configuration parameter, and described flash memory characteristic is write to internal information record sheet;
Write for controlling the information of data access, to described flash media format;
According to the step of configuration parameter binding physical piece, wherein, this step is included as binding physical piece allocated physical address, and sets up binding contrast relationship;
Binding physical piece is carried out to the step of data manipulation, described step of binding physical piece being carried out to data manipulation, comprising:
Read described configuration parameter;
Receive the order of data writing, carry out data writing operation;
Determine whether last outside read-write operation that intersects, if not according to described binding contrast relationship, use the outside read-write technology of intersecting to carry out data writing operation;
Determine whether last internal chiasma read-write operation, as otherwise according to as described in binding contrast relationship, use internal chiasma read-write technology to carry out data writing operation;
Judge whether data writing operation carries out last rank, as no, described binding contrast relationship, is used multistage read-write technology to carry out data writing operation.
Preferably, above-mentioned flash memory characteristic includes but not limited to: in the outer plate number of support, the sheet of support, in the crystal grain of number of die, support, exponent number, rank binding page increment and/or crystal grain are bound page increment.
Preferably, the above-mentioned step of obtaining the flash memory characteristic of flash media comprises: read flash media numbering; The sheet number that comprises of judgement flash media, if comprise, multi-disc thinks that flash media supports the outside read-write mode that intersects of multichannel, otherwise thinks that flash media do not support the outside read-write technology of intersecting of multichannel; Judge in the physics sheet of flash media whether have multiway intersection read-write technology, if having, think that flash media supports multichannel internal chiasma read-write mode, otherwise think that flash media do not support multichannel internal chiasma read-write technology; Judge in the crystal grain of flash media whether have a plurality of rank, if having, think that flash media support has multistage; Otherwise think that flash media do not support multistage; Using above-mentioned judged result as flash memory characteristic, repeat above-mentioned steps until obtain the flash memory characteristic of all flash medias; The flash memory characteristic of all flash medias is write to flash memory characteristic records table.
Preferably, according in the rank binding page increment of described flash media and crystal grain binding page incremental implementation binding sheet.
Preferably, the above-mentioned step according to configuration parameter binding physical piece comprises: read the flash memory characteristic of flash media, described flash memory characteristic comprises the piece number of flash media, the number of die of every flash media; If described flash media comprises two, in the crystal grain from the first flash media and the second flash media, order is got at least one physical block without binding respectively; Got a plurality of physical blocks are bound into a physical block, form a binding piece; Repeat above-mentioned steps until complete the binding of all physical blocks; For described binding piece allocated physical address, set up binding contrast relationship; Using the physical address of binding piece as configuration parameter.
Preferably, according in the rank binding page increment of described flash media and crystal grain binding page incremental implementation binding sheet.
Preferably, be bound into after a physical block often completing got a plurality of physical blocks, allocated physical address is also set up binding contrast relationship, then carry out the bindings to other physical block.
Preferably, if the number of die of described flash media is 1, the described step according to configuration parameter binding physical piece comprises: the flash memory characteristic that reads flash media; From each sheet of crystal grain, get respectively at least one physical block without binding; Got a plurality of physical blocks are bound into a physical block, form a binding piece; Repeat above-mentioned steps until complete the binding of all physical blocks; For described binding piece allocated physical address, set up binding contrast relationship; Using the physical address of binding piece as configuration parameter.
Preferably, according in the rank binding page incremental implementation binding sheet of described flash media.
Preferably, be bound into after a physical block often completing got a plurality of physical blocks, allocated physical address is also set up binding contrast relationship, then carry out the bindings to other physical block.
The method of raising flash memory medium data access speed provided by the invention can be united the flash media of multi-disc, polytype, various manufacturers, forming unified general administration module is managed for configuration, according to configuration, carry out the flex logic binding of page and piece, improve to greatest extent read or write speed. improve the data-handling capacity of memory storage master control.
Accompanying drawing explanation
Fig. 1 is that embodiment of the present invention memory device structure forms and principle schematic;
Fig. 2 is the schematic flow sheet that the embodiment of the present invention is obtained flash memory characteristic;
Fig. 3 is the process flow diagram that the embodiment of the present invention arranges flash memory characteristic;
Fig. 4 is that the embodiment of the present invention forms the physical block in polylith flash media the schematic diagram of binding piece;
Fig. 5 is that the embodiment of the present invention forms the physical block in a plurality of crystal grain the schematic diagram of binding piece;
Organization of Data form schematic diagram in piece after the binding of Fig. 6 embodiment of the present invention;
Data writing operation process flow diagram after Fig. 7 embodiment of the present invention formation binding piece.
The realization of the object of the invention, functional characteristics and advantage, in connection with embodiment, are described further with reference to accompanying drawing.
Embodiment
As is known to the person skilled in the art, flash media is that flash chip is formed by one or more crystal grain (die) encapsulation, each crystal grain comprises one or more rank (plane), each rank comprises several storage blocks (Block), each storage block consists of a plurality of pages (Page), and every page comprises a plurality of sectors.The characteristic Shi Yiyewei unit data writing of flash media storage data, Yi Kuaiwei unit's obliterated data; When data writing, by the sector of page, sequentially write.In flash media, to storage block, distribute address in order, distributed the storage of address to be called soon physical block, and the imaginary address in use with divided block is called logical address, between logical address and physical address, by address mapping table, set up mapping relations.
The embodiment that the present invention proposes comprises a memory storage as shown in Figure 1, this memory storage 100 at least comprise control the control module 10 of data access, for configuration module 30 and the memory module 40 of storage configuration parameter, control module 10 comprises flash media processing module 50, register series module 60 and runs on the solidification software 20 in control module 10.Flash media processing module 50 respectively with register series module 60, solidification software 20 and memory module 40, control the read-write operation of memory module 40 and storage administration.Solidification software 20 reads the configuration parameter in configuration module 30, for flash media processing module 50.Wherein memory module 40 comprises that one or more is for storing the flash media of data, the same model chip that this one or more flash media can be same manufacturer production, the dissimilar chip that also different manufacturers is produced.
Different flash medias has different flash memory characteristics, by configuration parameter, describes flash memory characteristic.Configuration parameter includes but not limited to the quantity of sector in the quantity, each page of page in the numbering (ID), flash memory title model, flash memory manufacturer, each piece of flash media, number of die in the sheet of the outer plate number of support, support, support in crystal grain between exponent number, read command parameter, write order parameter, read states order, erase command, intercrystalline page increment and/or rank page increment etc.These configuration parameters are arranged in memory storage when production inventory device, by consulting the datasheet of each flash media, just can remove to set up flash memory characteristic records table according to the characterisitic parameter of every kind of flash media.Flash memory characteristic records table is as shown in table 1, according to the numbering of flash media wherein, can know that memory module 40 comprises how many flash medias.For example number " 123423450000 " in table 1, this numbering comprises " 1234 ", " 2345 " and " 0000 " three values, illustrate that this memory module 40 comprises two flash medias, i.e. the first flash media 401 and the second flash media 402, the first flash media 401 respective value " 1234 " wherein, its manufacturer is Samsung, the second flash media 402 respective value " 2345 ", and its manufacturer is Toshiba; Described memory module 40 is supported outside read-write technology and the two-way internal chiasma read-write technology of intersecting of two-way, and in the sheet of its support, number of die is 4, and in the crystal grain of support, exponent number is 2, and its rank binding page increment is 100, and crystal grain binding page increment is 1000.
Table 1
Fig. 2 illustrates the present embodiment, and to obtain the flow process of flash memory characteristic as follows:
Step S101, chooses the flash media of a model, inquires about its function declaration book;
Step S102, numbers by reading flash media the characteristic that obtains flash media, comprises which kind of flash, supports which kind of technology, consists of etc. several flash medias;
Step S103, judges the sheet number that this flash media comprises, if comprise, multi-disc carries out step S104, otherwise carries out step S105;
Step S104, thinks that this flash media support has the outside read-write mode that intersects of multichannel;
Step S105, thinks that this flash media only supports the outside read-write technology of intersecting in 1 tunnel, does not support the outside read-write technology of intersecting of multichannel;
Step S106, judges in each physics sheet of this flash media whether have multiway intersection read-write technology, if had, carries out step S107, otherwise carries out step S108;
Step S107, thinks that this flash media supports multichannel internal chiasma read-write mode;
Step S108, thinks that this flash media only supports 1 tunnel internal chiasma read-write technology, does not support multichannel internal chiasma read-write technology;
Step S109, judges in each crystal grain of this flash media whether have a plurality of rank, if had, carries out step S110, otherwise carries out step S111;
Step S110, thinks that this flash media support has multistage;
Step S111, thinks that this flash media only supports 1 rank, does not support multistage;
Step S112, using above-mentioned judged result as one group of flash memory characteristic;
Step S113, writes flash memory characteristic records table by flash memory characteristic;
Step S114, judges whether to also have new flash media, if having, returns to step S101, otherwise carries out step S115;
Step S115, completes flash memory characteristic records table.
Adopt successively above-mentioned flow process to obtain the flash memory characteristic of each flash media, and insert respectively flash memory characteristic records table, complete obtaining of flash memory characteristic.
The present embodiment is set up flash memory characteristic records table record flash memory characteristic, and various flash media is bound into specific logical block and logical page (LPAGE).When production inventory device, tool of production software is write flash memory characteristic records table in flash media in specific piece by USB-SCSI order, the solidification software 20 of the present embodiment reads flash memory characteristic records table, and according to flash memory characterisitic parameter wherein, flash media is done and classified, form the read-write operation of the unified various flash medias of general procedure parts.General procedure parts receive the flash memory characteristic of various different flash medias, take different reading/writing methods to carry out logic to different flash memory mechanism and write page and logical erase block.General procedure parts by reading the numbering of flash media, inquire corresponding record as index in production inventory device flash memory characteristic records table, then record are write to internal information record sheet by usb order; After the power-up initializing of memory storage use procedure, general procedure parts carry out corresponding read-write operation by read recorded information in internal information record sheet.Above-mentioned internal information record sheet (IIR:Inner Information Record) is user-defined, and flash memory only provides storage space, as for the inside, puts what content, uses which space and does not use which space all by user, to be specified.The present embodiment is used internal information record sheet to record self-defining information recording, comprises the manufacturer's information of movable storage device, configuration information of flash memory module etc.The internal information record sheet of the present embodiment is kept in some specific of flash media, can not be used to read and write data.
The process of configuration parameter is set in conjunction with Fig. 3 explanation:
Step S201, memory storage 100 powers on, and is placed in the state of setting; The order that writes configuration parameter that memory storage 100 Receiving Host System Uilities send;
Step S202, solidification software 20 judges whether to receive that USB-SCSI writes configuration parameter order;
Step S203, by tool software, the flash memory characteristic as in table 1 is write in internal information record sheet (IIR:Inner Information Record), a part as IIR table is stored in the message block of flash media, record the message block of IIR table, this message block is to hide piece, is specifically designed to the specific information of storing such as IIR table;
Step S204, writes other for controlling the information of data access by tool software, and the flash media in flash memory module 40 is formatd.
Step S205, completes the setting of flash memory characteristic.After described configuration parameter setting completes, when storage access data, by solidification software 20, read.
Below in conjunction with concrete scheme, above embodiment is further described.
Fig. 4 illustrates described memory module 40 and comprises that two flash medias are the binding of the first flash media 401 and the second flash media 402, described the first flash media 401 is by crystal grain A and crystal grain B, the second flash media 402 is encapsulated and forms respectively by crystal grain A ' and crystal grain B ', the crystal grain A of described the first flash media 401 and crystal grain B comprise that physical block 0 is to physical block 2047, the crystal grain A ' of described the second flash media 402 and crystal grain B ' comprise that physical block 0 ' is to physical block 2047 ', the first flash media 401 and the second flash media 402 are set up the basic table of comparisons by address mapping relation.
Now the physical block in the first flash media 401 and the second flash media 402 is carried out to binding, binding is actually the process into physical block dispensed physical address, and its concrete binding procedure comprises:
Step S301, solidification software 20 reads the flash memory characteristic in configuration module 40, as the piece number of flash media, the number of die of every flash media etc.;
Step S302, in each crystal grain from the first flash media 401 and the second flash media 402, order is got at least one physical block without binding respectively, as gets the first physical block 0 of flash media 401 crystal grain A and the physical block of crystal grain B 1024, the physical block 0 ' of the second flash media 402 crystal grain A ' and 4 physical blocks such as physical block 1024 ' of crystal grain B ';
Step S303, is bound into a physical block by got a plurality of physical blocks, and being about to above-mentioned 4 physical blocks binding becomes a binding piece 0, and the sector number of wherein binding in 0 page of piece is 4 physical block sector number sums;
Step S304, has judged whether the binding of all physical blocks, if not, returns to step S302, until complete the binding of all physical blocks; As the physical block 1 ' of the physical block 1 of the first flash media 401 and physical block 1025, the second flash media 402 and physical block 1025 ' binding become binding piece 1, the rest may be inferred,, until the physical block 1023 ' of the physical block 1023 of the first flash media 401 and physical block 2047, the second flash media 402 and physical block 2047 ' binding become binding piece 1023;
Step S305, is above-mentioned binding piece allocated physical address, sets up binding contrast relationship;
Step S306, the part using the physical address of binding piece as configuration parameter is written in configuration module 30.
In above-mentioned steps, if the number of die of this flash media is 1, the step of carrying out physical block bindings in rank comprises:
Step S401, as got respectively at least one physical block without binding rank A and rank B, as gets the physical block 0 of rank A and the physical block 1024 of rank B from each rank of crystal grain;
Step S402, is bound into a physical block by got a plurality of physical blocks, forms a binding piece; Be about to 1024 bindings of above-mentioned physical block 0 and physical block and become binding piece 0 ", wherein bind piece 0 " number of pages be above-mentioned 2 physical block number of pages sums, the sector number of its page is also 2 physical block sector number sums;
Step S403, has judged whether the binding of all physical blocks in each rank, if not, returns to step S401; Until complete the binding of all physical blocks; As physical block 1025 bindings of the physical block 1 of rank A and rank B become binding piece 1 ", the rest may be inferred ..., until the physical block 1023 of rank A and 2047 bindings of the physical block of rank B become binding piece 1023 ";
Step S404, is above-mentioned binding piece allocated physical address, sets up binding contrast relationship;
Step S405, the part using the physical address of binding piece as configuration parameter is written in configuration module 30.
Above-mentioned binding contrast relationship refers to the corresponding relation of binding piece and logical address, can use the binding table of comparisons to record this binding contrast relationship.About binding piece is identical with the binding of the physical block of aforementioned intergranule with the mapping relations of logical address, do not repeat them here.
For rank and crystal grain, define respectively relative binding page increment, namely rank binding page increment dtPlane and crystal grain binding page increment dtDie, by reading the function declaration book of flash media, can obtain this two values, just can know and how to bind in sheet, and mainly contain in sheet in 2 road sheets, intersect and read and write and the interior 2 rank patterns of crystal grain.
The signal of below enumerating the physical block after a binding of 2 tunnel internal chiasma read-write technology, this crystal grain has 1024 pieces, and each piece has 128 pages:
The actual physics page address of the 7th page of the 5th sector of the 0th block after above-mentioned binding is exactly: 128 pages of each piece of 7+1024*128=131079(), and sevtor address: 5%4=1 in actual page; Can obtain thus, be actually according to page address be 131079 and sevtor address 1 remove to access flash media.
Lift again the physical block signal after the outer binding of a slice, the address of this physical block is the same, but chip selection signal is with different for judging the whether ready signal line of flash media:
The actual physics page address of the 7th page of the 5th sector of the 0th block after above-mentioned binding is exactly: 7, and sevtor address: 5%4=1 in actual page; In fact accessing flash is the 1st sector of the 7th page of the 2nd of access.Because one page is physically 4 sectors, if be greater than the 2nd of the access of arriving of 4 sectors, so 0-3 at the 1st flash page, and 4-7 is in the 2nd flash page.
After the above-mentioned step for binding piece allocated physical address also can be arranged on step S303, i.e. allocated physical address after often completing got a plurality of physical blocks to be bound into a physical block, then carry out the bindings to other physical block.
Above-mentioned binding piece after binding is set up the binding piece physical address binding table of comparisons corresponding with logical address by address mapping relation, be above-mentioned binding piece 0 corresponding one by one with the logical address of mapping to binding piece 1023, as bound piece 0 counterlogic piece 0, bind piece 1 counterlogic piece 1 ..., until binding piece 1023 counterlogic pieces 1023.The institutional framework of the binding table of comparisons can be identical with the table of comparisons that prior art is used, but the contrast relationship recording in the binding table of comparisons is the binding contrast relationship of a plurality of bound physical blocks of logical address contrast.
The present embodiment is in data writing operation process, adopt the addressing of the binding table of comparisons to carry out write operation, when needs write new data, take binding piece logical address be unit, by the addressing of the binding table of comparisons, to binding data writing in piece, in conjunction with technology such as outside intersection read-writes, can further improve the speed of data writing.
Fig. 5 shows described memory module 40 and comprises the i.e. binding of the first flash media 401 of a flash media, described the first flash media 401 is formed by crystal grain A and crystal grain B encapsulation, wherein crystal grain A comprises physical block 0 to physical block 1023, and crystal grain B comprises physical block 1024 to physical block 2047.The first flash media 401 is set up the basic table of comparisons by address mapping relation, and above-mentioned physical block 0 is corresponding one by one with the logical address of mapping to physical block 2047.
Fig. 6 illustrates Organization of Data form in a piece after binding, and in each binding piece, page size remains unchanged, and in page, sector number is multiplied.
The order of above-mentioned the first flash media 401 its data writing when without binding is: send write order (80h)+transmission writing address (without page 0 address of binding logical block 0)+transmission data writing (2048bytes)+transmission program command (11h)+wait and write (wait rb).Therefore can only be to the physical block of crystal grain A or the physical block Yi Yewei unit of crystal grain B successively data writing when the first flash media 401 is without binding, and only have when upper secondary data writes, could continue to write the data of lower one page, so writing speed is relatively slow.
And the first flash media 401 after binding is when being used multistage read-write technology data writing, its data writing order is: send write order (80h)+transmissions writing address (the page 0 ' address of logical block 0 ')+send data writing (2048bytes)+transmissions program command (11h)+waits and write (wait rb)+transmission write order (81h)+transmission writing address (page 0 ' address of logical block 1 ')+transmission and write data (2048bytes)+transmission program command (10h)+wait and write (wait rb).Because physical address corresponding to logical block 0 ' is binding piece 0 ', and binding piece 0 ' is comprised of the physical block 0 of crystal grain A and the physical block 1024 of crystal grain B, binding piece 1 ' is comprised of the physical block 1 of crystal grain A and the physical block 1025 of crystal grain B, therefore described the first flash media 401 is used in multistage read-write technology data writing process after binding, physical block 1 and the physical block 1025 Yi Yewei units' while data writings to the first physical block 0 of flash media 401 crystal grain A and the physical block 1024 of crystal grain B and crystal grain A, the process of data writing is to carry out in crystal grain A and crystal grain B simultaneously, owing to sending the wait of write order (80h), to write time of (wait rb) very short, substantially negligible, therefore with without binding data writing compare, its programming time can be saved one times, use and once wait for that the time that writes (wait rb) completes the data of writing 2 pages.
Fig. 7 shows and uses the data of the flash media after binding to write flow process, comprises step:
Step S601, after power-up initializing, solidification software 20 reads the configuration parameter that configuration module 30 sets in advance, as the correlation parameter of binding piece;
Step S602, the order that Receiving Host system data writes, carries out to data writing operation in memory module 40, and this data writing operation comprises the logical address of data writing;
Step S603, determines whether last outside read-write operation that intersects, as no, and execution step S604; Otherwise, finish this data write operation;
Step S604, according to binding the corresponding relation of piece and logical address in the binding table of comparisons, is used the outside read-write technology of intersecting to carry out data writing operation;
Step S606, determines whether last internal chiasma read-write operation, as no, and execution step S607; Otherwise, return to step S603;
Step S607, according to binding the corresponding relation of piece and logical address in the binding table of comparisons, is used internal chiasma read-write technology to carry out data writing operation;
Step S608, judges whether data writing operation carries out last rank, as no, and execution step S609; Otherwise, return to step S606;
Step S609, according to binding the corresponding relation of piece and logical address in the binding table of comparisons, is used multistage read-write technology to carry out data writing operation.
The foregoing is only the preferred embodiments of the present invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes instructions of the present invention and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (10)
1. a method that improves flash memory medium data access speed, comprising:
Obtain the step of the flash memory characteristic of flash media;
Reception writes the order of configuration parameter;
Execution writes the order of configuration parameter, and described flash memory characteristic is write to internal information record sheet;
Write for controlling the information of data access, to described flash media format;
According to the step of configuration parameter binding physical piece, wherein, this step is included as binding physical piece allocated physical address, and sets up binding contrast relationship;
Binding physical piece is carried out to the step of data manipulation, described step of binding physical piece being carried out to data manipulation, comprising:
Read described configuration parameter;
Receive the order of data writing, carry out data writing operation;
Determine whether last outside read-write operation that intersects, if not according to described binding contrast relationship, use the outside read-write technology of intersecting to carry out data writing operation;
Determine whether last internal chiasma read-write operation, as otherwise according to as described in binding contrast relationship, use internal chiasma read-write technology to carry out data writing operation;
Judge whether data writing operation carries out last rank, as no, according to described binding contrast relationship, use multistage read-write technology to carry out data writing operation.
2. the method for raising flash memory medium data access speed as claimed in claim 1, it is characterized in that, described flash memory characteristic includes but not limited to: in the outer plate number of support, the sheet of support, in the crystal grain of number of die, support, exponent number, rank binding page increment and/or crystal grain are bound page increment.
3. the method for raising flash memory medium data access speed as claimed in claim 1, is characterized in that,
The described step of obtaining the flash memory characteristic of flash media comprises:
Read flash media numbering;
Judge the sheet number that described flash media comprises, if comprise, multi-disc thinks that described flash media supports the outside read-write technology of intersecting of multichannel, otherwise thinks that described flash media do not support the outside read-write technology of intersecting of multichannel;
Judge in the physics sheet of described flash media whether have multiway intersection read-write technology, if having, think that flash media supports multichannel internal chiasma read-write mode, otherwise think that flash media do not support multichannel internal chiasma read-write technology;
Judge in the crystal grain of described flash media whether have a plurality of rank, if having, think that described flash media support has multistage; Otherwise think that described flash media do not support multistage;
Using above-mentioned judged result as flash memory characteristic, repeat above-mentioned steps until obtain the flash memory characteristic of all flash medias;
The flash memory characteristic of all flash medias is write to flash memory characteristic records table.
4. the method for the raising flash memory medium data access speed as described in claims 1 to 3 any one, is characterized in that:
In the rank binding page increment of described flash media and crystal grain binding page incremental implementation binding sheet.
5. the method for the raising flash memory medium data access speed as described in claims 1 to 3 any one, is characterized in that, the described step according to configuration parameter binding physical piece comprises:
Read the flash memory characteristic of flash media, described flash memory characteristic comprises the piece number of flash media, the number of die of every flash media;
If described flash media comprises two, in the crystal grain from the first flash media and the second flash media, order is got at least one physical block without binding respectively;
Got a plurality of physical blocks are bound into a physical block, form a binding piece;
Repeat above-mentioned steps until complete the binding of all physical blocks;
For described binding piece allocated physical address, set up binding contrast relationship;
Using the physical address of binding piece as configuration parameter.
6. the method for raising flash memory medium data access speed as claimed in claim 5, is characterized in that:
In the rank binding page increment of described flash media and crystal grain binding page incremental implementation binding sheet.
7. the method for raising flash memory medium data access speed as claimed in claim 5, it is characterized in that, be bound into after a physical block often completing got a plurality of physical blocks, allocated physical address is also set up binding contrast relationship, then carry out the bindings to other physical block.
8. the method for the raising flash memory medium data access speed as described in claims 1 to 3 any one, is characterized in that, if the number of die of described flash media is 1, the described step according to configuration parameter binding physical piece comprises:
Read the flash memory characteristic of flash media;
From each rank of crystal grain, get respectively at least one physical block without binding;
Got a plurality of physical blocks are bound into a physical block, form a binding piece;
Repeat above-mentioned steps until complete the binding of all physical blocks;
For described binding piece allocated physical address, set up binding contrast relationship;
Using the physical address of binding piece as configuration parameter.
9. the method for raising flash memory medium data access speed as claimed in claim 8, is characterized in that:
In the rank binding page incremental implementation binding sheet of described flash media.
10. the method for raising flash memory medium data access speed as claimed in claim 8, it is characterized in that, be bound into after a physical block often completing got a plurality of physical blocks, allocated physical address is also set up binding contrast relationship, then carry out the bindings to other physical block.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810007361.3A CN101533663B (en) | 2008-03-11 | 2008-03-11 | Method for improving flash memory medium data access speed |
| PCT/CN2009/070736 WO2009111981A1 (en) | 2008-03-11 | 2009-03-11 | Method for improving data access speed of flash media and apparatus employing this method |
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| CN200810007361.3A CN101533663B (en) | 2008-03-11 | 2008-03-11 | Method for improving flash memory medium data access speed |
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| CN101533663B true CN101533663B (en) | 2014-07-16 |
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