CN101376491A - A method for manufacturing a micro-electromechanical system micro-magnetic actuator with a double-layer structure - Google Patents
A method for manufacturing a micro-electromechanical system micro-magnetic actuator with a double-layer structure Download PDFInfo
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- CN101376491A CN101376491A CNA200710121076XA CN200710121076A CN101376491A CN 101376491 A CN101376491 A CN 101376491A CN A200710121076X A CNA200710121076X A CN A200710121076XA CN 200710121076 A CN200710121076 A CN 200710121076A CN 101376491 A CN101376491 A CN 101376491A
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 30
- 229920005591 polysilicon Polymers 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 21
- 238000001259 photo etching Methods 0.000 claims description 17
- 239000012528 membrane Substances 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 239000012530 fluid Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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Abstract
本发明涉及微机电系统微型执行器技术领域，公开了一种双层结构的微机电系统微磁执行器的制作方法，该方法包括：A.在硅晶片背面淀积氮化硅薄膜；B.保护正面，背面光刻，刻蚀形成氮化硅薄膜窗口；C.在硅晶片正面淀积一层PSG薄膜，在PSG层上再淀积一层多晶硅薄膜；D.在多晶硅薄膜上再淀积一层PSG，退火，对多晶硅薄膜进行磷掺杂；E.去掉PSG，光刻，刻蚀形成执行器图形；F.正面淀积一层氮化硅薄膜，光刻，刻蚀形成接触孔；G.正面光刻，打底胶，电子束蒸发Cr/Au，剥离形成金属线圈以及电极；H.腐蚀背面体硅，直到PSG层；I.在HF溶液中腐蚀PSG层，释放执行器。本发明简化了制作工艺，克服了用于流体控制的微执行器驱动力小的问题。
The invention relates to the micro-electromechanical system micro-actuator technical field, and discloses a method for manufacturing a micro-electromechanical system micro-magnetic actuator with a double-layer structure. The method includes: A. depositing a silicon nitride film on the back side of a silicon wafer; B. Protect the front side, photolithography on the back side, etch to form a silicon nitride film window; C. Deposit a layer of PSG film on the front side of the silicon wafer, and then deposit a layer of polysilicon film on the PSG layer; D. Re-deposit on the polysilicon film A layer of PSG, annealed, phosphorus-doped polysilicon film; E. Remove PSG, photolithography, etching to form actuator pattern; F. Deposit a layer of silicon nitride film on the front, photolithography, etching to form contact holes; G. Front side photolithography, primer, electron beam evaporation of Cr/Au, and stripping to form metal coils and electrodes; H. Etching the back bulk silicon until the PSG layer; I. Etching the PSG layer in HF solution to release the actuator. The invention simplifies the manufacturing process and overcomes the problem of small driving force of the micro-actuator used for fluid control.
Description
Technical field
The present invention relates to the miniature actuation technologies of MEMS (MEMS) field, relate in particular to the preparation method of the little magnetic executor of a kind of double-deck MEMS.
Background technology
The miniature actuator that utilizes micro electro mechanical system (MEMS) technology to be made both at home and abroad, of a great variety owing to the difference of principle, comprise thermal actuator, electrostatic actuator, electromagnetic actuator, permalloy actuator, artificial synthesizing jet-flow actuator, silicon rubber balloon actuator etc.
Produce the strong microactrator of convection cell interference performance, key will increase the driving force to actuator.In the various microactrators, utilize the actuator driven power of heat, electrostatic principle little, the skew that actuator is produced can not cause appreciable impact by convection cell, and some static magnetic executor is owing to the reason of stress and fuel factor, itself just produced very big deformation, and artificial jet, balloon actuator complex process are difficult to realize.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of double-deck MEMS preparation method of little magnetic executor, to simplify manufacture craft, to overcome the little problem of microactrator driving force that is used for fluid control.
(2) technical scheme
For achieving the above object, the invention provides a kind of preparation method of double-deck micro-electro-mechanical system magnetic actuator, this method comprises:
A, at silicon wafer back side deposition silicon nitride film;
B, protection front, back side photoetching, etching forms silicon nitride film window;
C, at the positive deposit one deck of silicon wafer PSG film, deposit one deck polysilicon membrane again on the PSG layer;
D, on polysilicon membrane deposit one deck PSG again, annealing is carried out phosphorus doping to polysilicon membrane;
E, remove PSG, photoetching, etching forms the actuator figure;
F, positive deposit one deck silicon nitride film, photoetching, etching forms contact hole;
G, positive photoetching, bottoming glue, electron beam evaporation Cr/Au peels off and forms wire coil and electrode;
H, corrosion back side bulk silicon are up to the PSG layer;
I, in HF solution corrosion PSG layer, discharge actuator.
In the such scheme, silicon wafer described in the steps A is the n type silicon chip of the crystal orientation of two surface finish for (100), and described deposit adopts low-pressure chemical vapor deposition LPCVD method to carry out, and the thickness of described silicon nitride film is 1.5 μ m.
In the such scheme, the positive photoresist that adopts of protection described in the step B is protected the front, and back side photoetching using plasma dry method is carried out, and etching forms silicon nitride film window and is of a size of 1100 μ m * 900 μ m.
In the such scheme, deposit described in the step C adopts the LPCVD method to carry out, and the thickness of PSG film is 2 μ m, and the thickness of polysilicon membrane is
Wherein phosphorus content is 6% among the PSG.
In the such scheme, deposit described in the step D adopts the LPCVD method to carry out, and the PSG film thickness is
Annealing temperature is 950 ℃, and the time is 1 hour.
In the such scheme, described step e comprises: adopt HF solution to remove surperficial PSG, and adopt photoresist to do and shelter dry etching polysilicon formation actuator figure.
In the such scheme, deposit described in the step F adopts the LPCVD method to carry out, and silicon nitride film thickness is
Adopt photoresist to do and shelter dry etching silicon nitride formation contact hole.
In the such scheme, the thickness of the Cr of electron beam evaporation described in the step G is
The thickness of Au is
The width of peeling off the wire coil of formation is 10 μ m, coil be spaced apart 5 μ m.
In the such scheme, it is anisotropic etch in 30% the KOH solution that the back side bulk silicon of corrosion described in the step H adopts at mass ratio.
In the such scheme, this little magnetic executor is of a size of 300 μ m * 300 μ m, support by 2 cantilever beams that are positioned at a side, cantilever beam is of a size of 200 μ m * 24 μ m, polysilicon and wire coil are formed current loop jointly, the actuator of energising is placed in the external magnetic field, and actuator will produce outside skew vibration under the effect in magnetic field.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, the miniature magnetic executor of the present invention's making, adopt double-decker, be made up of the polysilicon and the silicon nitride that mix, wire coil is positioned on the plane of actuator, actuator is supported by 2 cantilever beams that are positioned at a side, and polysilicon and wire coil are formed current loop jointly.
2, the present invention utilizes magnetic force to be motive force, has strengthened actuator skew vibration ability greatly, can apply appreciable impact by convection cell, and technology is simple, realizes easily.
3, be placed in the external magnetic field after the little magnetic executor energising of the double-deck MEMS that the present invention is made, actuator will produce outside skew vibration under the effect in magnetic field, reach the purpose that changes flow dynamic characteristic thereby convection cell applies certain being used for.
Description of drawings
Fig. 1 is the method flow diagram of the little magnetic executor of the double-deck MEMS of making provided by the invention;
Fig. 2 is for making the process chart of the little magnetic executor of double-deck MEMS according to the embodiment of the invention; Wherein, 1 is silicon, and 2 is silicon nitride, and 3 is silica, and 4 is metal, and 5 is photoresist;
Fig. 3 is the vertical view according to the little magnetic executor of double-deck MEMS of embodiment of the invention making.
The specific embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The little magnetic executor of this double-deck MEMS provided by the invention, adopt double-decker, be made up of the polysilicon and the silicon nitride that mix, wire coil is positioned on the plane of actuator, actuator is supported by 2 cantilever beams that are positioned at a side, and polysilicon and wire coil are formed current loop jointly.To be placed in the external magnetic field after the little magnetic executor energising of the double-deck MEMS of the present invention's making, actuator will produce outside skew vibration under the effect in magnetic field, reach the purpose that changes flow dynamic characteristic thereby convection cell applies certain being used for.
As shown in Figure 1, Fig. 1 is the method flow diagram of the little magnetic executor of the double-deck MEMS of making provided by the invention, and this method may further comprise the steps:
Step 101: at silicon wafer back side deposition silicon nitride film;
Step 102: protection is positive, back side photoetching, and etching forms silicon nitride film window;
Step 103: at the positive deposit one deck of silicon wafer PSG film, deposit one deck polysilicon membrane again on the PSG layer;
Step 104: deposit one deck PSG again on polysilicon membrane, annealing is carried out phosphorus doping to polysilicon membrane;
Step 105: remove PSG, photoetching, etching forms the actuator figure;
Step 106: positive deposit one deck silicon nitride film, photoetching, etching forms contact hole;
Step 107: positive photoetching, bottoming glue, electron beam evaporation Cr/Au peels off and forms wire coil and electrode;
Step 108: corrosion back side bulk silicon, up to the PSG layer;
Step 109: corrosion PSG layer in HF solution discharges actuator.
Silicon wafer described in the steps A described in the above-mentioned steps 101 is the n type silicon chip of the crystal orientation of two surface finish for (100), and described deposit adopts low-pressure chemical vapor deposition LPCVD method to carry out, and the thickness of described silicon nitride film is 1.5 μ m.
The positive photoresist that adopts of protection described in the above-mentioned steps 102 is protected the front, and back side photoetching using plasma dry method is carried out, and etching forms silicon nitride film window and is of a size of 1100 μ m * 900 μ m.
Deposit described in the above-mentioned steps 103 adopts the LPCVD method to carry out, and the thickness of PSG film is 2 μ m, and the thickness of polysilicon membrane is
Wherein phosphorus content is 6% among the PSG.
Deposit described in the above-mentioned steps 104 adopts the LPCVD method to carry out, and the PSG film thickness is
Annealing temperature is 950 ℃, and the time is 1 hour.
Above-mentioned steps 105 comprises: adopt HF solution to remove surperficial PSG, and adopt photoresist to do and shelter dry etching polysilicon formation actuator figure.
Deposit described in the above-mentioned steps 106 adopts the LPCVD method to carry out, and silicon nitride film thickness is
Adopt photoresist to do and shelter dry etching silicon nitride formation contact hole.
The thickness of the Cr of electron beam evaporation is described in the above-mentioned steps 107
The thickness of Au is
The width of peeling off the wire coil of formation is 10 μ m, coil be spaced apart 5 μ m.
It is anisotropic etch in 30% the KOH solution that the back side bulk silicon of corrosion described in the above-mentioned steps 108 adopts at mass ratio.
This little magnetic executor is of a size of 300 μ m * 300 μ m, support by 2 cantilever beams that are positioned at a side, cantilever beam is of a size of 200 μ m * 24 μ m, polysilicon and wire coil are formed current loop jointly, the actuator of energising is placed in the external magnetic field, and actuator will produce outside skew vibration under the effect in magnetic field.
Based on the method flow diagram of the little magnetic executor of the double-deck MEMS of the described making of Fig. 1, the method that the present invention makes the little magnetic executor of double-deck MEMS is further described below in conjunction with specific embodiment.
Embodiment
As shown in Figure 2, Fig. 2 is for making the process chart of the little magnetic executor of double-deck MEMS according to the embodiment of the invention.
Step 201: adopting low-pressure chemical vapor deposition (LPCVD) method deposition thickness on the lower surface of two polishing n-type (100) silicon wafers is the silicon nitride film of 1.5 μ m; The process chart corresponding with this is shown in Fig. 2-1.
Step 202: adopt the front of photoresist protection silicon wafer, the using plasma dry method is carried out photoetching to the back side of silicon wafer, and etching forms the silicon nitride film window that is of a size of 1100 μ m * 900 μ m; The process chart corresponding with this is shown in Fig. 2-2.
Step 203: adopting LPCVD method deposition thickness in the front of silicon wafer is the PSG film of 2 μ m, adopts LPCVD method deposition thickness to be then on the PSG film
Polysilicon membrane; The process chart corresponding with this is shown in Fig. 2-3.
Step 204: on polysilicon membrane, adopt LPCVD method deposition thickness to be
The PSG film; The process chart corresponding with this is shown in Fig. 2-4.
Step 205: annealing, polysilicon membrane is carried out phosphorus doping; Annealing temperature is 950 ℃, and the time is 1 hour; The process chart corresponding with this is shown in Fig. 2-5.
Step 206: adopt HF solution to remove surperficial PSG, and adopt photoresist to do and shelter dry etching polysilicon formation actuator figure; The process chart corresponding with this is shown in Fig. 2-6.
Step 207: adopt LPCVD method deposition thickness to be in the front of silicon wafer
Silicon nitride film; The process chart corresponding with this is shown in Fig. 2-7.
Step 208: adopt photoresist to do and shelter dried sculpture in human hair erosion silicon nitride film formation contact hole; The process chart corresponding with this is shown in Fig. 2-8.
Step 209: positive photoetching, bottoming glue, electron beam evaporation Cr/Au, wherein the thickness of Cr is
The thickness of Au is
Peel off and form wire coil and electrode, the width of wire coil is 10 μ m, coil be spaced apart 5 μ m; The process chart corresponding with this is shown in Fig. 2-9.
Step 210: adopting the protection of crystalbond509 glue positive, is anisotropic etch back side bulk silicon in 30% the KOH solution at mass ratio, up to the PSG layer; The process chart corresponding with this is shown in Fig. 2-10.
Step 211: corrosion PSG layer in HF solution discharges actuator; The process chart corresponding with this is shown in Fig. 2-11.
The little magnetic executor of double-deck MEMS that adopts above-mentioned steps to make is of a size of 300 μ m * 300 μ m, support by 2 cantilever beams that are positioned at a side, cantilever beam is of a size of 200 μ m * 24 μ m, polysilicon and wire coil are formed current loop jointly, the actuator of energising is placed in the external magnetic field, and actuator will produce outside skew vibration under the effect in magnetic field.As shown in Figure 3, Fig. 3 is the vertical view according to the little magnetic executor of double-deck MEMS of embodiment of the invention making.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1, a kind of preparation method of double-deck micro-electro-mechanical system magnetic actuator is characterized in that, this method comprises:
A, at silicon wafer back side deposition silicon nitride film;
B, protection front, back side photoetching, etching forms silicon nitride film window;
C, at the positive deposit one deck of silicon wafer PSG film, deposit one deck polysilicon membrane again on the PSG layer;
D, on polysilicon membrane deposit one deck PSG again, annealing is carried out phosphorus doping to polysilicon membrane;
E, remove PSG, photoetching, etching forms the actuator figure;
F, positive deposit one deck silicon nitride film, photoetching, etching forms contact hole;
G, positive photoetching, bottoming glue, electron beam evaporation Cr/Au peels off and forms wire coil and electrode;
H, corrosion back side bulk silicon are up to the PSG layer;
I, in HF solution corrosion PSG layer, discharge actuator.
2, the preparation method of double-deck micro-electro-mechanical system magnetic actuator according to claim 1, it is characterized in that, silicon wafer described in the steps A is the n type silicon chip of the crystal orientation of two surface finish for (100), described deposit adopts low-pressure chemical vapor deposition LPCVD method to carry out, and the thickness of described silicon nitride film is 1.5 μ m.
3, the preparation method of double-deck micro-electro-mechanical system magnetic actuator according to claim 1; it is characterized in that; the positive photoresist that adopts of protection described in the step B is protected the front; back side photoetching using plasma dry method is carried out, and etching forms silicon nitride film window and is of a size of 1100 μ m * 900 μ m.
4, the preparation method of double-deck micro-electro-mechanical system magnetic actuator according to claim 1 is characterized in that, deposit described in the step C adopts the LPCVD method to carry out, and the thickness of PSG film is 2 μ m, and the thickness of polysilicon membrane is
Wherein phosphorus content is 6% among the PSG.
5, the preparation method of double-deck micro-electro-mechanical system magnetic actuator according to claim 1 is characterized in that, deposit described in the step D adopts the LPCVD method to carry out, and the PSG film thickness is
Annealing temperature is 950 ℃, and the time is 1 hour.
6, the preparation method of double-deck micro-electro-mechanical system magnetic actuator according to claim 1 is characterized in that, described step e comprises:
Adopt HF solution to remove surperficial PSG, and adopt photoresist to do and shelter dry etching polysilicon formation actuator figure.
7, the preparation method of double-deck micro-electro-mechanical system magnetic actuator according to claim 1 is characterized in that, deposit described in the step F adopts the LPCVD method to carry out, and silicon nitride film thickness is
Adopt photoresist to do and shelter dry etching silicon nitride formation contact hole.
8, the preparation method of double-deck micro-electro-mechanical system magnetic actuator according to claim 1 is characterized in that, the thickness of the Cr of electron beam evaporation described in the step G is
The thickness of Au is
The width of peeling off the wire coil of formation is 10 μ m, coil be spaced apart 5 μ m.
9, the preparation method of double-deck micro-electro-mechanical system magnetic actuator according to claim 1 is characterized in that, it is anisotropic etch in 30% the KOH solution that the back side bulk silicon of corrosion described in the step H adopts at mass ratio.
10, the preparation method of double-deck micro-electro-mechanical system magnetic actuator according to claim 1, it is characterized in that, this little magnetic executor is of a size of 300 μ m * 300 μ m, support by 2 cantilever beams that are positioned at a side, cantilever beam is of a size of 200 μ m * 24 μ m, polysilicon and wire coil are formed current loop jointly, and the actuator of switching on is placed in the external magnetic field, and actuator will produce outside skew vibration under the effect in magnetic field.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA200710121076XA CN101376491A (en) | 2007-08-29 | 2007-08-29 | A method for manufacturing a micro-electromechanical system micro-magnetic actuator with a double-layer structure |
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| CNA200710121076XA CN101376491A (en) | 2007-08-29 | 2007-08-29 | A method for manufacturing a micro-electromechanical system micro-magnetic actuator with a double-layer structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928977A (en) * | 2012-10-24 | 2013-02-13 | 无锡微奥科技有限公司 | Manufacturing method for micro electro mechanical system (MEMS) micromirror bistable state structure and optical switch |
-
2007
- 2007-08-29 CN CNA200710121076XA patent/CN101376491A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928977A (en) * | 2012-10-24 | 2013-02-13 | 无锡微奥科技有限公司 | Manufacturing method for micro electro mechanical system (MEMS) micromirror bistable state structure and optical switch |
| CN102928977B (en) * | 2012-10-24 | 2015-08-12 | 无锡微奥科技有限公司 | A kind of method for making of MEMS micro mirror bistable structure and photoswitch |
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