CN102928977B - A kind of method for making of MEMS micro mirror bistable structure and photoswitch - Google Patents
A kind of method for making of MEMS micro mirror bistable structure and photoswitch Download PDFInfo
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- CN102928977B CN102928977B CN201210409983.5A CN201210409983A CN102928977B CN 102928977 B CN102928977 B CN 102928977B CN 201210409983 A CN201210409983 A CN 201210409983A CN 102928977 B CN102928977 B CN 102928977B
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Abstract
The invention discloses a kind of method for making of MEMS micro mirror bistable structure, comprise the following steps: high-impedance state front side of silicon wafer deposition ground floor dielectric foil material also etches; Evaporation first layer metal membraneous material, and etching forms metal level; Sputtering second layer metal film also etches formation micromirror; The dark silicon etching of silicon chip back side, forms a cavity; The dark silicon etching of high-impedance state front side of silicon wafer; After having etched, be cooled to room temperature, form the original state of bistable structure.Have the photoswitch being made the MEMS micro mirror bistable structure obtained by said method, comprise bistable structure and drives structure, described bistable structure is arranged at the top of drives structure.This manufacture craft is simple, and micromirror and straight beam actuating arm, pedestal are one-body molded, make precision higher; This photoswitch is easy to operate, and utilize the switching that Electromagnetic Drive realizes between two states, fast response time, reliability is high, and energy consumption is low.
Description
Technical field
The invention belongs to micro electro mechanical system field, relate to a kind of method for making of MEMS micro mirror bistable structure and comprise the photoswitch of bistable structure obtained by this method.
Background technology
MEMS(Micro-electro-mechanical systems), i.e. MEMS (micro electro mechanical system), utilize the produced various microdevice of micro-processing technology or system, mainly comprise micro mechanism, microsensor, micro actuator and corresponding treatment circuit etc., it is in the multiple Micrometer-Nanometer Processing Technology of fusion, and applies the high-tech front subject that the basis of the newest fruits of modern information technologies grows up.Relative to traditional machinery, MEMS size is less, and maximum is no more than 1cm, is even only several μm; Therefore adopting the generation technique similar with integrated circuit (IC), the mature technology in utilizing IC to produce and technique, produce in batches, and cost performance can increase substantially relative to tradition " machinery " manufacturing technology.MEMS, by the semiconductor fabrication techniques of maturation, adopts the material such as silicon as carrier, promotes the flourish of new microization sensor miscellaneous and driver.Along with the microminiaturization of device, MEMS technology is widely used in micro projector, photoswitch, Variable Optical Attenuator, micro spectrometer, micro-optical probe etc.
Photoswitch is wherein that one has one or more optional transmit port, is mutually to change the light signal in optical transmission line or integrated optical circuit or the optical device of logical operation.Along with the fast development of Networks of Fiber Communications, demand optical passive component being comprised to photoswitch is increasing, and wherein photoswitch is used for rearrangement of optical network or increase its reliability.Current research is used in MEMS technology and manufactures above photoswitch, and can improve the performance of photoswitch, reduce the volume of device, cost simultaneously, more of paramount importance is that it can be made on one piece of silicon chip photoswitch, can large-scale integrated array of photoswitch.
Current photoswitch has monostable and bistable state two kinds, wherein, monostable photoswitch is that the state of photoswitch is switched to default channel all the time after the power supply of photoswitch cuts off, and bistable light switch is after cutting off the electricity supply, the state of photoswitch rests on the passage before power-off; Comparatively speaking, monostable photoswitch is more complicated than bistable light switch principle, and power consumption is large.
For realizing the bistable state of photoswitch, adopting a kind of elastic construction, there is elastic deformation in it under external force, can not return back to original state when external force is cancelled, but is stabilized in another one state, claims this structure to be bistable structure or bistable mechanism.This structure only needs the energy having inputted switching state, does not need to continue input energy and just can maintain any one state in two states, thus reach energy-conservation object.
Arc MEMS compliant bistable mechanism disclosed in existing patent documentation CN 101654216A, comprise Curved beam, flexure spring, lumped mass block and pedestal, wherein, lumped mass block is fixedly installed on the center of Curved beam, the two ends of Curved beam are connected with one end of two mutually isostructural flexure springs respectively, and the other end of two flexure springs is connected with two mutually isostructural pedestals respectively.In the invention, its original state utilizing initial arc MEMS structure to realize in bistable state, switches to another state position by external force.Although said structure also can realize bi-stable effect, in handoff procedure, still need the booster action of external force just can completion status to switch, operation relative complex, reliability is lower, also can affect the response speed of device.Simultaneously, the making of this bistable mechanism needs two mask plates, is only a bistable mechanism after making, can not produce the minute surface needed for light path switch and pedestal simultaneously, make in use also need reprocessing or refill operations such as joining, make troubles to use.
Summary of the invention
It is simple that an object of the present invention is to propose a kind of making structure, fast response time, reliability is high, the method that consumes energy MEMS micro mirror bistable structure low, and this manufacture craft is simple, and micromirror and straight beam actuating arm, pedestal are one-body molded, make precision higher.
Two of object of the present invention is to propose a kind of photoswitch, and the bistable structure of this photoswitch is made by said method and obtains, and the photoswitch of this MEMS micro mirror bistable structure is easy to operate, and can realize the switching of two states without the need to External Force Acting, energy consumption is low.
For reaching this object, the present invention by the following technical solutions:
A method for making for MEMS micro mirror bistable structure, comprises the following steps:
Steps A: at the front of cleaned high-impedance state silicon chip deposition ground floor dielectric foil material, and etching forms the first material structure layer in actuating arm;
Step B: evaporate first layer metal membraneous material on the first material structure layer, and etching forms metal level, this metal level is the layer of material structure in pad and actuating arm, and the ground floor material structure layer formed in this metal level and steps A forms actuating arm;
Step C: the metal level formed in stepb sputters second layer metal film, and adopt etching or stripping technology to form micromirror;
Step D: using micromirror as mask, carries out dark silicon etching at the back side of high-impedance state silicon chip, and forms a cavity, and this cavity is positioned at the below of micromirror and actuating arm;
Step e: carry out dark silicon etching in the front of high-impedance state silicon chip, and without the need to its mask, to form straight beam bistable structure;
Step F: after having etched, is cooled to room temperature, forms the original state of bistable structure.
Further, the mode of the deposition in described steps A is PECVD, and the method for etching is dry method or wet etching.
Further, the material of the ground floor thin dielectric film in described steps A is SiO
2.
Further, the metal level in described step B is the conductor layer in pad and actuating arm structure, and the material of this metal level is Al.
Further, the method for the etching in described step B is dry etching.
Further, the material of the second layer metal film in described step C is Au.
Further, the original state of the bistable structure formed in described step F is the first steady state (SS) of bistable structure, and the elemental height of described bistable structure and the length ratio of bistable structure, namely h/L is greater than 3.
Further, the elemental height of described bistable structure and the length ratio of bistable structure, namely h/L is greater than 6.
Have the photoswitch being made the MEMS micro mirror bistable structure obtained by said method, comprise bistable structure and drives structure, described bistable structure is arranged at the top of drives structure.
Further, the type of drive field drives of described drives structure or coil drive mode.
Beneficial effect of the present invention is: the method for making of a kind of MEMS micro mirror bistable structure that the present invention proposes, comprise the following steps, steps A: at the front of cleaned high-impedance state silicon chip deposition ground floor dielectric foil material, and etching forms the first material structure layer in actuating arm; Step B: evaporate first layer metal membraneous material on the first material structure layer, and etching forms metal level, this metal level is the layer of material structure in pad and actuating arm, and the ground floor material structure layer formed in this metal level and steps A forms actuating arm; Step C: the metal level formed in stepb sputters second layer metal film, and adopt etching or stripping technology to form micromirror; Step D: using micromirror as mask, carries out dark silicon etching at the back side of high-impedance state silicon chip, and forms a cavity, and this cavity is positioned at the below of micromirror and actuating arm; Step e: carry out dark silicon etching in the front of high-impedance state silicon chip, and without the need to its mask, to form straight beam bistable structure; Step F: after having etched, is cooled to room temperature, forms the original state of bistable structure.The method is by the shaping bistable structure of one-body molded mode, micromirror and pedestal, easy and simple to handle, and working (machining) efficiency is high; The present invention also proposes a kind ofly have the photoswitch being made the MEMS micro mirror bistable structure obtained by said method, and comprise bistable structure and drives structure, described bistable structure is arranged at the top of drives structure.Further, the type of drive field drives of described drives structure or coil drive mode.Wherein, the bi-material that Two-layer Beam structure adopts expansivity different, makes the structure of its self-assembling formation first steady state (SS) after heating cooling, maintains its state, reduce power consumption without the need to energy; By adopting the mode of Electromagnetic Drive, realize the switching of photoswitch between the first steady state (SS) and the second steady state (SS), and based on electromagnetic drive mode, make bistable structure component responds speed fast, this structure is simple, and reliability is high, energy consumption is low; Utilize semiconductor batch to produce, individual devices cost is low.
Accompanying drawing explanation
Fig. 1 is the Making programme figure of a kind of MEMS micro mirror of the present invention bistable structure;
Fig. 2 makes by the method for Fig. 1 the MEMS micro mirror bistable structure obtained;
Fig. 3 is the A-A sectional view of MEMS micro mirror bistable structure in Fig. 2;
Fig. 4 is optical switch construction schematic diagram of the present invention.
In figure:
1, bistable structure; 2, substrate; 3, cavity; 4, the first steady state (SS); 5, the second steady state (SS); 6, state is made; 7, drives structure; 11, actuating arm; 12, micromirror; The elemental height of h, bistable structure; The length of L, bistable structure.
Embodiment
Technical scheme of the present invention is further illustrated by embodiment below in conjunction with accompanying drawing.
As shown in Figures 1 to 3, a kind of method for making of MEMS micro mirror bistable structure, comprises the following steps:
Steps A: at the front of cleaned high-impedance state silicon chip deposition ground floor dielectric foil material, and etching forms the first material structure layer in actuating arm 11;
Step B: evaporate first layer metal membraneous material on the first material structure layer, and etching forms metal level, this metal level is the layer of material structure in pad and actuating arm 11, and the ground floor material structure layer formed in this metal level and steps A forms actuating arm 11;
Step C: the metal level formed in stepb sputters second layer metal film, and adopt etching or stripping technology to form micromirror 12;
Step D: using micromirror 12 as mask, carries out dark silicon etching at the back side of high-impedance state silicon chip, and forms a cavity, and this cavity is positioned at the below of micromirror 12 and actuating arm 11;
Step e: carry out dark silicon etching in the front of high-impedance state silicon chip, and without the need to its mask, to form straight beam bistable structure;
Step F: after having etched, is cooled to room temperature, forms the original state of bistable structure.
Wherein, the mode of the deposition in described steps A is PECVD, and the method for etching is dry method or wet etching.
Wherein, the material of the ground floor thin dielectric film in described steps A is SiO
2.
Wherein, the metal level in described step B is the conductor layer in pad and actuating arm, and the material of this metal level is Al.
Wherein, the method for the etching in described step B is dry etching.
Wherein, the material of the second layer metal film in described step C is Au.
Wherein, the original state of the bistable structure 1 formed in described step F is the first steady state (SS) 4 of bistable structure 1, and the elemental height of described bistable structure 1 and the length ratio of bistable structure 1, namely h/L is greater than 3.
Preferably, the elemental height of described bistable structure 1 and the length ratio of bistable structure 1, namely h/L is greater than 6.
Further, the operating process of described steps A and step B can be exchanged, and namely first makes metal level, then deposits ground floor dielectric foil material, etches to form actuating arm 11, makes operating process easier.
Concrete, the actuating arm 11 of bistable structure 1 is the ground floor dielectric foil material in steps A and the composition of the first layer metal membraneous material in step B, and this first layer metal film is Al, and ground floor dielectric foil material is SiO
2, the thermal expansivity of above-mentioned bi-material is different, and when the actuating arm 11 of the bistable structure that heating is double-deck cools again, double-decker will shrink towards the side that thermal expansivity is high, shrinks and just forms stress.And bistable structure 1 is in the process made, owing to making temperature higher than room temperature, in manufacturing process, the making state 6 of bistable structure is straight beam structure, and accurately can control the thickness of evaporation and sputtered film, also make easy to operate, cost of manufacture is low; When being cooled to room temperature when completing, a side high towards thermal expansivity shrinks and forms stress by the actuating arm 11 of bistable structure, this stress makes a state among bistable structure self-assembling formation first steady state (SS) 4 and the second steady state (SS) 5, has come without the need to applying external force; And be greater than 6 by the control elemental height of bistable structure and the length ratio of bistable structure, make the switching of bistable structure between the first steady state (SS) 4 and the second steady state (SS) 5 easy, and ensure response speed.
Above-mentioned manufacturing process is by processing steps such as deposition, evaporation, sputtering, dark silicon etchings, and the actuating arm 11 of one-body molded bistable structure, micromirror 12 and substrate 2, make easy and simple to handle, working (machining) efficiency is high, and improves machining precision further.
As shown in Figure 4, a kind of have the photoswitch being made the MEMS micro mirror bistable structure obtained by said method, and comprise bistable structure 1 and drives structure 7, described bistable structure 1 is arranged at the top of drives structure 7.Because the actuating arm 11 of bistable structure is connected with its integrated substrate, and be made into a cavity structure at actuating arm 11 and the below of micromirror 12, drives structure 7 is arranged on below this cavity and substrate, actuating arm 11 can be out of shape by the space contraction above drives structure 7, realizes the switching between two stable states.
Wherein, the type of drive field drives of described drives structure 7 or coil drive mode.
As a kind of optimal way of the present invention, the type of drive of drives structure 7 is field drives mode, preferably, this drives structure 7 is permanent magnet, and permanent magnet is arranged at the below of bistable structure 1, when being energized to bistable structure, due to the magnetic action of permanent magnet, produce magnetic field force F, under the effect of magnetic field force F, produce the power downward or upward perpendicular to bistable structure, structure is deformed, is switched to the second steady state (SS) 5, after stopping energising, structure remains on this state, completes switching.During as the first steady state (SS) 4 need be switched to, only need change sense of current, and then change the direction of magnetic field force, make structure stress switch to the first steady state (SS) 4.No matter be that this structure all can maintain its state without the need to the support of external force, greatly reduces power consumption in the first steady state (SS) 4 or the second steady state (SS) 5.
As another kind of optimal way of the present invention, the type of drive of drives structure 7 is coil drive mode, coil is arranged at bistable structure 1 around, at the back side of this bistable structure, magnetic material is set, preferably, this magnetic material can be assembled by assembling mode or electroplating technology is combined with bistable structure, and is magnetized by magnetic material; By changing the switching that can realize between two stable states by the direction of current of coil.
In the present invention, the first steady state (SS) 4 is different from the position of the micromirror 12 corresponding to the second steady state (SS) 5, will form different light paths, and then realizes the different-effect of Push And Release.
This bistable light switch adopts magnetic field or coil drive, makes photoswitch response speed block, and structure is simple, and reliability is high; Utilize semiconductor batch production technology, individual devices cost is low.
Below know-why of the present invention is described in conjunction with specific embodiments.These describe just in order to explain principle of the present invention, and can not be interpreted as limiting the scope of the invention by any way.Based on explanation herein, those skilled in the art does not need to pay performing creative labour can associate other embodiment of the present invention, and these modes all will fall within protection scope of the present invention.
Claims (10)
1. a method for making for MEMS micro mirror bistable structure, is characterized in that, comprises the following steps:
Steps A: at the front of cleaned high-impedance state silicon chip deposition ground floor dielectric foil material, and etching forms the first material structure layer in actuating arm;
Step B: evaporate first layer metal membraneous material on the first material structure layer, and etching forms metal level, this metal level is the layer of material structure in pad and actuating arm, and the ground floor material structure layer formed in this metal level and steps A forms actuating arm;
Step C: the metal level formed in stepb sputters second layer metal film, and adopt etching or stripping technology to form micromirror;
Step D: using micromirror as mask, carries out dark silicon etching at the back side of high-impedance state silicon chip, and forms a cavity, and this cavity is positioned at the below of micromirror and actuating arm;
Step e: carry out dark silicon etching in the front of high-impedance state silicon chip, and without the need to its mask, to form straight beam bistable structure;
Step F: after having etched, is cooled to room temperature, forms the original state of bistable structure.
2. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1, is characterized in that, the mode of the deposition in described steps A is PECVD, and the method for etching is dry method or wet etching.
3. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1, is characterized in that, the material of the ground floor thin dielectric film in described steps A is SiO
2.
4. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1, is characterized in that, the metal level in described step B is the conductor layer in pad and actuating arm, and the material of this metal level is Al.
5. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1, is characterized in that, the method for the etching in described step B is dry etching.
6. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1, is characterized in that, the material of the second layer metal film in described step C is Au.
7. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1, it is characterized in that, the original state of the bistable structure formed in described step F is the first steady state (SS) of bistable structure, the elemental height of described bistable structure and the length ratio of bistable structure, namely h/L is greater than 3.
8. the method for making of a kind of MEMS micro mirror bistable structure according to claim 7, it is characterized in that, the elemental height of described bistable structure and the length ratio of bistable structure, namely h/L is greater than 6.
9. have the photoswitch being made the MEMS micro mirror bistable structure obtained by claim 1 to 8 either method, it is characterized in that, comprise bistable structure and drives structure, described bistable structure is arranged at the top of drives structure.
10. photoswitch according to claim 9, is characterized in that, the type of drive of described drives structure is field drives or coil drive mode.
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| CN103133580B (en) * | 2013-02-27 | 2014-12-31 | 大连理工大学 | A Multistable Variant Structure Based on Variable Thickness Plates |
| CN104007549B (en) * | 2014-05-05 | 2017-02-15 | 深圳市盛喜路科技有限公司 | Large-displacement MEMS optical switch with self-locked state |
| US10288220B2 (en) * | 2015-08-27 | 2019-05-14 | City University Of Hong Kong | Multistable structure and a method for making thereof |
| DE102017220413A1 (en) * | 2017-11-16 | 2019-05-16 | Robert Bosch Gmbh | Micromechanical component and production method for a micromechanical component |
| CN113292038B (en) * | 2021-07-05 | 2023-08-29 | 美满芯盛(杭州)微电子有限公司 | MEMS (micro-electromechanical systems) reinforced mass block inertial device and preparation method thereof |
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| CN101376491A (en) * | 2007-08-29 | 2009-03-04 | 中国科学院微电子研究所 | A method for manufacturing a micro-electromechanical system micro-magnetic actuator with a double-layer structure |
| CN101993033A (en) * | 2009-08-19 | 2011-03-30 | 微智半导体股份有限公司 | Micro-electromechanical structure and manufacturing method |
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| GB2371119A (en) * | 2000-09-25 | 2002-07-17 | Marconi Caswell Ltd | Micro electro-mechanical systems |
| US6800503B2 (en) * | 2002-11-20 | 2004-10-05 | International Business Machines Corporation | MEMS encapsulated structure and method of making same |
| KR100661347B1 (en) * | 2004-10-27 | 2006-12-27 | 삼성전자주식회사 | Micro thin film structure and MEMS switch using the same and method for manufacturing them |
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| CN101376491A (en) * | 2007-08-29 | 2009-03-04 | 中国科学院微电子研究所 | A method for manufacturing a micro-electromechanical system micro-magnetic actuator with a double-layer structure |
| CN101993033A (en) * | 2009-08-19 | 2011-03-30 | 微智半导体股份有限公司 | Micro-electromechanical structure and manufacturing method |
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