CN101376489A - A method of manufacturing a microelectromechanical system magnetic actuator - Google Patents
A method of manufacturing a microelectromechanical system magnetic actuator Download PDFInfo
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- CN101376489A CN101376489A CNA2007101210740A CN200710121074A CN101376489A CN 101376489 A CN101376489 A CN 101376489A CN A2007101210740 A CNA2007101210740 A CN A2007101210740A CN 200710121074 A CN200710121074 A CN 200710121074A CN 101376489 A CN101376489 A CN 101376489A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 239000010931 gold Substances 0.000 claims abstract description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052737 gold Inorganic materials 0.000 claims abstract description 10
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 8
- 239000011810 insulating material Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 36
- 238000001259 photo etching Methods 0.000 claims description 26
- 239000003292 glue Substances 0.000 claims description 20
- 238000005260 corrosion Methods 0.000 claims description 14
- 230000007797 corrosion Effects 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 238000009713 electroplating Methods 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 abstract 5
- 239000013615 primer Substances 0.000 abstract 4
- 239000002987 primer (paints) Substances 0.000 abstract 4
- 239000011651 chromium Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000446 fuel Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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Abstract
本发明涉及微机电系统微型执行器技术领域，公开了一种微机电系统磁执行器的制作方法，包括：A.在硅晶片下表面上淀积氮化硅薄膜，上表面上淀积氧化硅薄膜；B.保护正面，背面光刻，刻蚀形成氮化硅薄膜窗口；C.正面光刻，刻蚀形成氮化硅薄膜执行器图形；D.正面光刻，打底胶，电子束蒸发Cr/Au，剥离形成金属线圈及电极；E.正面光刻，打底胶，蒸发种子层，电镀金；F.正面光刻，打底胶，去金去铬；G.正面泛曝，显影，打底胶，保护正面，腐蚀背面体硅直到氧化硅层；H.腐蚀氧化硅，释放执行器。本发明利用磁力为推动力，增强了执行器偏移振动能力，利用光刻胶作为绝缘材料，简化了制作工艺，避免了可能存在的应力、热效应等问题。
The invention relates to the micro-actuator technical field of micro-electro-mechanical systems, and discloses a manufacturing method of a micro-electro-mechanical system magnetic actuator, comprising: A. depositing a silicon nitride film on the lower surface of a silicon wafer, and depositing silicon oxide on the upper surface Thin film; B. Protect the front, backside photolithography, etch to form silicon nitride film window; C. Front side photolithography, etch to form silicon nitride thin film actuator pattern; D. Front side photolithography, primer, electron beam evaporation Cr/Au, stripped to form metal coils and electrodes; E. Front photolithography, primer, evaporated seed layer, electroplating gold; F. Front photolithography, primer, gold and chromium removal; G. Front flood exposure, development , make primer, protect the front, etch the back body silicon until the silicon oxide layer; H. Etch the silicon oxide, release the actuator. The invention uses magnetic force as the driving force to enhance the actuator's ability to shift and vibrate, uses photoresist as an insulating material, simplifies the manufacturing process, and avoids problems such as possible stress and thermal effects.
Description
Technical field
The present invention relates to the miniature actuation technologies of MEMS (MEMS) field, relate in particular to a kind of preparation method of MEMS magnetic executor.
Background technology
The miniature actuator that utilizes micro electro mechanical system (MEMS) technology to be made both at home and abroad, of a great variety owing to the difference of principle, comprise thermal actuator, electrostatic actuator, electromagnetic actuator, permalloy actuator, artificial synthesizing jet-flow actuator, silicon rubber balloon actuator etc.
Produce the strong microactrator of convection cell interference performance, key will increase the driving force to actuator.In the various microactrators, utilize the actuator driven power of heat, electrostatic principle little, the skew that actuator is produced can not cause appreciable impact by convection cell, and the characteristics that the driving force of magnetic executor is big make it become most popular microactrator.
But general magnetic executor spare adopts sacrifice layer corrosion technology, and complex process is not easy to realize.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of preparation method of MEMS magnetic executor, to simplify manufacture craft.
(2) technical scheme
For achieving the above object, the invention provides a kind of preparation method of micro-electro-mechanism system magnetic executor, this method comprises:
A, on the silicon wafer lower surface deposition silicon nitride film, silicon oxide deposition film on the upper surface;
B, protection front, back side photoetching, etching forms silicon nitride film window;
C, positive photoetching, etching form silicon nitride film actuator figure;
D, positive photoetching, bottoming glue, electron beam evaporation Cr/Au peels off and forms wire coil and electrode;
E, positive photoetching, bottoming glue, evaporation Seed Layer, electrogilding;
F, positive photoetching, bottoming glue goes gold to dechromise;
G, positive general exposing to the sun are developed, bottoming glue, and protection is positive, and corrosion back side bulk silicon is up to silicon oxide layer;
H, corrosion oxidation silicon discharge actuator.
In the such scheme, silicon wafer described in the steps A is the n type silicon chip of the crystal orientation of two surface finish for (100), and described deposit adopts low-pressure chemical vapor deposition LPCVD method to carry out, and the thickness of described silicon nitride film is 1.5 μ m, and silicon oxide film thickness is 2.5 μ m.
In the such scheme, the positive photoresist that adopts of protection described in the step B is protected the front, and back side photoetching using plasma dry method is carried out, and etching forms silicon nitride film window and is of a size of 1100 μ m * 950 μ m.
In the such scheme, positive photoetching described in the step C is adopted photoresist to do and is sheltered, and adopts the dry etching silicon nitride film to form the actuator figure.
In the such scheme, the thickness of the Cr of electron beam evaporation described in the step D is
The thickness of Au is
The width of the wire coil of described formation is 10 μ m, coil be spaced apart 5 μ m.
In the such scheme, Seed Layer described in the step e is Cr/Au, and wherein the thickness of Cr is
The thickness of Au is
The thickness of described plating Au is 2.5 μ m.
In the such scheme, go gold to dechromise described in the step F and adopt wet method to carry out.
In the such scheme, the positive crystalbond509 glue that adopts of protection described in the step G is protected the front, and it is anisotropic etch in 30% the KOH solution that described corrosion back side bulk silicon adopts at mass ratio.
In the such scheme, the silicon of corrosion oxidation described in the step G adopts BOE solution to carry out.
In the such scheme, this little magnetic executor is of a size of 300 μ m * 350 μ m, is supported by 2 cantilever beams that are positioned at a side, and cantilever beam is of a size of 200 μ m * 24 μ m, utilize photoresist as insulating materials, the metal connecting line on upper strata is linked to each other with the lower metal coil form the closed-loop path.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, the miniature magnetic executor of the present invention's making, with the silicon nitride is structure sheaf, and wire coil is positioned on the plane of actuator, and actuator is supported by 2 cantilever beams that are positioned at a side, utilize photoresist as insulating materials, the metal connecting line on upper strata is linked to each other with the lower metal coil form the closed-loop path.
2, the present invention utilizes magnetic force to be motive force, strengthened actuator skew vibration ability greatly, can apply appreciable impact by convection cell, utilize photoresist to test easily as the technology of insulating materials, technology is simple relatively, simplified manufacture craft greatly, avoided other actuators may problem, the problem includes: problems such as stress, fuel factors.
Description of drawings
Fig. 1 is the method flow diagram of making MEMS magnetic executor provided by the invention;
Fig. 2 is a process chart of making the MEMS magnetic executor according to the embodiment of the invention; Wherein, 1 is silicon, and 2 is silicon nitride, and 3 is silica, and 4 is metal, and 5 is photoresist;
Fig. 3 is the vertical view according to the MEMS magnetic executor of embodiment of the invention making;
Fig. 4 is the profile according to the MEMS magnetic executor of embodiment of the invention making.
The specific embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
This MEMS magnetic executor provided by the invention, with the silicon nitride is structure sheaf, and wire coil is positioned on the plane of actuator, and actuator is supported by 2 cantilever beams that are positioned at a side, utilize photoresist as insulating materials, the metal connecting line on upper strata is linked to each other with the lower metal coil form the closed-loop path.Its operation principle is that the magnetic executor of will switch on is placed in the external magnetic field, and then actuator will produce outside skew vibration under the effect in magnetic field, reaches the purpose that changes flow dynamic characteristic thereby convection cell applies certain being used for.
As shown in Figure 1, Fig. 1 is the method flow diagram of making MEMS magnetic executor provided by the invention, and this method may further comprise the steps:
Step 101: deposition silicon nitride film on the silicon wafer lower surface, silicon oxide deposition film on the upper surface;
Step 102: protection is positive, back side photoetching, and etching forms silicon nitride film window;
Step 103: positive photoetching, etching form silicon nitride film actuator figure;
Step 104: positive photoetching, bottoming glue, electron beam evaporation Cr/Au peels off and forms wire coil and electrode;
Step 105: positive photoetching, bottoming glue, evaporation Seed Layer, electrogilding;
Step 106: positive photoetching, bottoming glue goes gold to dechromise;
Step 107: positive general exposing to the sun, develop, bottoming glue, protection is positive, and corrosion back side bulk silicon is up to silicon oxide layer;
Step 108: corrosion oxidation silicon discharges actuator.
Silicon wafer described in the above-mentioned steps 101 is the n type silicon chip of the crystal orientation of two surface finish for (100), and described deposit adopts low-pressure chemical vapor deposition LPCVD method to carry out, and the thickness of described silicon nitride film is 1.5 μ m, and silicon oxide film thickness is 2.5 μ m.
The positive photoresist that adopts of protection described in the above-mentioned steps 102 is protected the front, and back side photoetching using plasma dry method is carried out, and etching forms silicon nitride film window and is of a size of 1100 μ m * 950 μ m.
Positive photoetching described in the above-mentioned steps 103 is adopted photoresist to do and is sheltered, and adopts the dry etching silicon nitride film to form the actuator figure.
The thickness of electron beam evaporation Cr is described in the above-mentioned steps 104
The thickness of Au is
The width of the wire coil of described formation is 10 μ m, coil be spaced apart 5 μ m.
Seed Layer described in the above-mentioned steps 105 is Cr/Au, and wherein the thickness of Cr is
The thickness of Au is
The thickness of described plating Au is 2.5 μ m.
Go gold to dechromise described in the above-mentioned steps 106 and adopt wet method to carry out.
The positive crystalbond509 glue that adopts of protection described in the above-mentioned steps 107 is protected the front, and it is anisotropic etch in 30% the KOH solution that described corrosion back side bulk silicon adopts at mass ratio.
Corrosion oxidation silicon described in the above-mentioned steps 108 adopts BOE solution to carry out.
This little magnetic executor is of a size of 300 μ m * 350 μ m, is supported by 2 cantilever beams that are positioned at a side, and cantilever beam is of a size of 200 μ m * 24 μ m, utilizes photoresist as insulating materials, makes the metal connecting line on the upper strata formation closed-loop path that links to each other with the lower metal coil.
Method flow diagram based on the described making of Fig. 1 MEMS magnetic executor further describes the method that the present invention makes the MEMS magnetic executor below in conjunction with specific embodiment.
Embodiment
As shown in Figure 2, Fig. 2 is a process chart of making the MEMS magnetic executor according to the embodiment of the invention.
Step 201: adopting low-pressure chemical vapor deposition (LPCVD) method deposition thickness on the lower surface of two polishing n-type (100) silicon wafers is the silicon nitride film of 1.5 μ m; The process chart corresponding with this is shown in Fig. 2-1.
Step 202: at the upper surface employing LPCVD of two polishing n-type (100) silicon wafers method deposition thickness is the silicon oxide film of 2.5 μ m; The process chart corresponding with this is shown in Fig. 2-2.
Step 203: adopt the front of photoresist protection silicon wafer, the using plasma dry method is carried out photoetching to the back side of silicon wafer, and etching forms the silicon nitride film window that is of a size of 1100 μ m * 950 μ m; The process chart corresponding with this is shown in Fig. 2-3.
Step 204: adopt photoresist to do the front of sheltering and carry out photoetching, adopt the dry etching etching to form silicon nitride film actuator figure to silicon wafer; The process chart corresponding with this is shown in Fig. 2-4.Step 205: positive photoetching, bottoming glue, electron beam evaporation Cr/Au, the thickness of Cr is
The thickness of Au is
Peel off and form wire coil and electrode, the width of wire coil is 10 μ m, coil be spaced apart 5 μ m; The process chart corresponding with this is shown in Fig. 2-5.
Step 206: photoetching is carried out in the front at two polishing n-type (100) silicon wafers, and bottoming glue; The process chart corresponding with this is shown in Fig. 2-6.
Step 207: at the front evaporation Seed Layer Cr/Au of two polishing n-type (100) silicon wafers, wherein the thickness of Cr is
The thickness of Au is
The process chart corresponding with this is shown in Fig. 2-7.
Step 208: electroplating thickness is the gold of 2.5 μ m on the Seed Layer Cr/Au of evaporation; The process chart corresponding with this is shown in Fig. 2-8.
Step 209: photoetching is carried out in the front to gold-plated silicon wafer, and bottoming glue; The process chart corresponding with this is shown in Fig. 2-9.
Step 210: adopt wet method to go gold to dechromise, positive general exposing to the sun developed, bottoming glue; The process chart corresponding with this is shown in Fig. 2-10.
Step 211: adopt the protection of crystalbond509 glue positive, adopting at mass ratio is anisotropic etch back side bulk silicon in 30% the KOH solution, up to silicon oxide layer; The process chart corresponding with this is shown in Fig. 2-11.
Step 212: adopt BOE solution corrosion silica, discharge actuator; The process chart corresponding with this is shown in Fig. 2-12.
The MEMS magnetic executor that adopts above-mentioned steps to make is of a size of 300 μ m * 350 μ m, support by 2 cantilever beams that are positioned at a side, cantilever beam is of a size of 200 μ m * 24 μ m, utilizes photoresist as insulating materials, the metal connecting line on upper strata is linked to each other with the lower metal coil form the closed-loop path.As shown in Figure 3 and Figure 4, Fig. 3 is the vertical view according to the MEMS magnetic executor of embodiment of the invention making, and Fig. 4 is the profile according to the MEMS magnetic executor of embodiment of the invention making.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1, a kind of preparation method of micro-electro-mechanism system magnetic executor is characterized in that, this method comprises:
A, on the silicon wafer lower surface deposition silicon nitride film, silicon oxide deposition film on the upper surface;
B, protection front, back side photoetching, etching forms silicon nitride film window;
C, positive photoetching, etching form silicon nitride film actuator figure;
D, positive photoetching, bottoming glue, electron beam evaporation Cr/Au peels off and forms wire coil and electrode;
E, positive photoetching, bottoming glue, evaporation Seed Layer, electrogilding;
F, positive photoetching, bottoming glue goes gold to dechromise;
G, positive general exposing to the sun are developed, bottoming glue, and protection is positive, and corrosion back side bulk silicon is up to silicon oxide layer;
H, corrosion oxidation silicon discharge actuator.
2, the preparation method of micro-electro-mechanism system magnetic executor according to claim 1, it is characterized in that, silicon wafer described in the steps A is the n type silicon chip of the crystal orientation of two surface finish for (100), described deposit adopts low-pressure chemical vapor deposition LPCVD method to carry out, the thickness of described silicon nitride film is 1.5 μ m, and silicon oxide film thickness is 2.5 μ m.
3, the preparation method of micro-electro-mechanism system magnetic executor according to claim 1; it is characterized in that; the positive photoresist that adopts of protection described in the step B is protected the front, and back side photoetching using plasma dry method is carried out, and etching forms silicon nitride film window and is of a size of 1100 μ m * 950 μ m.
4, the preparation method of micro-electro-mechanism system magnetic executor according to claim 1 is characterized in that, positive photoetching described in the step C is adopted photoresist to do and sheltered, and adopts the dry etching silicon nitride film to form the actuator figure.
5, the preparation method of micro-electro-mechanism system magnetic executor according to claim 1 is characterized in that, the thickness of the Cr of electron beam evaporation described in the step D is 100
, the thickness of Au is 4000
, the width of the wire coil of described formation is 10 μ m, coil be spaced apart 5 μ m.
6, the preparation method of micro-electro-mechanism system magnetic executor according to claim 1 is characterized in that, Seed Layer described in the step e is Cr/Au, and wherein the thickness of Cr is 100
, the thickness of Au is 100
, the thickness of described plating Au is 2.5 μ m.
7, the preparation method of micro-electro-mechanism system magnetic executor according to claim 1 is characterized in that, goes gold to dechromise described in the step F and adopts wet method to carry out.
8, the preparation method of micro-electro-mechanism system magnetic executor according to claim 1; it is characterized in that; the positive crystalbond509 glue that adopts of protection described in the step G is protected the front, and it is anisotropic etch in 30% the KOH solution that described corrosion back side bulk silicon adopts at mass ratio.
9, the preparation method of micro-electro-mechanism system magnetic executor according to claim 1 is characterized in that, the silicon of corrosion oxidation described in the step G adopts BOE solution to carry out.
10, the preparation method of micro-electro-mechanism system magnetic executor according to claim 1, it is characterized in that, this little magnetic executor is of a size of 300 μ m * 350 μ m, support by 2 cantilever beams that are positioned at a side, cantilever beam is of a size of 200 μ m * 24 μ m, utilize photoresist as insulating materials, the metal connecting line on upper strata is linked to each other with the lower metal coil form the closed-loop path.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007101210740A CN101376489A (en) | 2007-08-29 | 2007-08-29 | A method of manufacturing a microelectromechanical system magnetic actuator |
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| CNA2007101210740A CN101376489A (en) | 2007-08-29 | 2007-08-29 | A method of manufacturing a microelectromechanical system magnetic actuator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102198927A (en) * | 2011-04-22 | 2011-09-28 | 河南大学 | Method for etching nanometer pattern on surface of crystalline silicon |
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2007
- 2007-08-29 CN CNA2007101210740A patent/CN101376489A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102198927A (en) * | 2011-04-22 | 2011-09-28 | 河南大学 | Method for etching nanometer pattern on surface of crystalline silicon |
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