CN101339916A - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
- Publication number
- CN101339916A CN101339916A CNA2007101185024A CN200710118502A CN101339916A CN 101339916 A CN101339916 A CN 101339916A CN A2007101185024 A CNA2007101185024 A CN A2007101185024A CN 200710118502 A CN200710118502 A CN 200710118502A CN 101339916 A CN101339916 A CN 101339916A
- Authority
- CN
- China
- Prior art keywords
- electrostatic chuck
- wafer
- insulating barrier
- helium
- salient points
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 claims abstract description 3
- 230000004888 barrier function Effects 0.000 claims description 29
- 238000009826 distribution Methods 0.000 claims description 5
- 238000005422 blasting Methods 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 abstract description 21
- 239000001307 helium Substances 0.000 abstract description 21
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 21
- 238000000034 method Methods 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000003068 static effect Effects 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a static chuck which comprises an insulation layer. The upper surface of the insulation layer is provided with a plurality of salient points that are equally distributed in the matrix form or circumference form, which is propitious for helium to enter the gap between a wafer and the insulating layer for realizing the heat transmission of the wafer and ensuring that the surface temperature of the wafer is evenly distributed. The static chuck is mainly applied to the process of the corrosion of a semiconductor and can improve engraving evenness of the wafer, can also be applied to the processing technology of other semiconductors.
Description
Technical field
The present invention relates to a kind of semiconductor wafer process equipment, relate in particular to a kind of electrostatic chuck of wafer process equipment.
Background technology
In integrated circuit (IC) process for making, particularly in etching, physical vapor deposition (PVD) and the chemical vapor deposition (CVD) process, general use electrostatic chuck (Electro Static Chuck is called for short ESC) fixes, supports and transmits wafer (Wafer), avoids wafer to occur moving or inconsistent phenomenon in technical process.Electrostatic chuck adopts the mode of electrostatic attraction to fix wafer, relatively has lot of advantages with traditional mechanical chuck and vacuum cup.Electrostatic chuck has reduced in the process of using traditional chuck, because the damage that does not conform to reparation that mechanical reasons such as pressure, collision cause wafer; Owing to adopt electrostatic attraction mechanical fixation useless, increased effective working (finishing) area of wafer; Reduced because the particle contamination that mechanical collision produces; Because electrostatic chuck contacts more effectively in carrying out heat conduction fully with wafer; And overcome the critical defect of vacuum cup, can in the high vacuum reaction chamber, use.
In semiconductor processes, particularly etching and PVD are strict to the requirement of process uniformity, no matter are on Temperature Distribution or attraction distribute, and be all very strict to its inhomogeneity requirement.
As shown in Figure 1 and Figure 2, electrostatic chuck of the prior art comprises insulating barrier 2, aluminium base 3, and the DC electrode layer is imbedded in the insulating barrier 2, and electrostatic chuck is exactly to utilize the electrostatic attraction that produces between DC electrode layer and the wafer 1 to reach the purpose of fixed wafer 1.Aluminium base 3 is used for supports insulative layer 2, imports radio-frequency power supply (RF), forms the RF bias voltage.Generally speaking, adopt silicon bonding bonding between insulating barrier 2 and the aluminium base 3.Aluminium base 3 is provided with helium import 4 and helium passages, and insulating barrier 2 is provided with helium raceway groove 5 and helium hole 6.
Mainly the acting as support fixation wafer 1 and wafer 1 carried out temperature transfer and then realizes that temperature evenly distributes of electrostatic chuck, support fixation wafer 1 is realized by electrostatic attraction, it is to contact with wafer 1 by insulating barrier 2 to carry out heat transmission on the one hand that temperature homogeneity distributes, helium enters aluminium base 3 by helium import 4 on the other hand, enters helium raceway groove 5 by helium hole 6 again; After evenly distributing, helium enters slit realization between wafer 1 and the insulating barrier 2 again to the heat transfer of wafer 1 in helium raceway groove 5.
There is following shortcoming at least in above-mentioned prior art:
Because the existence of electrostatic attraction, wafer 1 is very limited with the gap of insulating barrier 2, is unfavorable for the heat conduction of helium to wafer 1, causes the surface temperature distribution of wafer 1 inhomogeneous.
Summary of the invention
The purpose of this invention is to provide a kind of helium that helps wafer 1 is carried out heat conducting electrostatic chuck.
The objective of the invention is to be achieved through the following technical solutions:
Electrostatic chuck of the present invention comprises insulating barrier, and the upper surface of described insulating barrier is concavo-convex.
As seen from the above technical solution provided by the invention, electrostatic chuck of the present invention, because the upper surface of insulating barrier is concavo-convex, helps helium and enter slit between wafer and the insulating barrier and realize heat transfer to wafer wafer surface temperature being evenly distributed.
Description of drawings
Fig. 1 is the structural representation of electrostatic chuck in the prior art;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is the planar structure schematic diagram of electrostatic chuck specific embodiment one of the present invention;
Fig. 4 is the facade structures schematic diagram of electrostatic chuck specific embodiment of the present invention;
Fig. 5 is the planar structure schematic diagram of electrostatic chuck specific embodiment two of the present invention.
Embodiment
Electrostatic chuck of the present invention, its preferable specific embodiment one comprises insulating barrier 2 as shown in Figure 3, Figure 4, the upper surface of described insulating barrier 2 is concavo-convex.
The upper surface of concrete insulating barrier 2 is provided with a plurality of salient points 7, forms concave surface 8 between the salient point 7, and when placing wafer 1 on the insulating barrier 2, wafer 1 contacts with salient point 7, and the gap between concave surface 8 and the wafer 1 just becomes the helium space.Helium enters concave surface 8 by helium passages, and helium is evenly distributed in concave surface 8.In the insulating barrier outmost turns sealing ring 9 can be set, to helium seal (relatively sealing can not seal fully, and leakage is arranged).Helium passes to wafer 1 uniformly with the heat of insulating barrier 2 in concave surface 8 scopes, make the uniformity of temperature profile of wafer 1, improves processing performance, improves the product uniformity.
Described a plurality of salient point 7 evenly distributes.Can adopt matrix form to distribute, in described a plurality of salient points 7, each salient point 7 be adjacent salient point 7 between distance equate.
Specific embodiment two as shown in Figure 5, described a plurality of salient points 7 can adopt circle distribution, along being a plurality of circle distribution in the center of circle with insulating barrier 2 centers.
The surface configuration of described salient point 7 is one or more in the following shape: circular, square, triangle, polygon.
The diameter of described salient point 7 can be 3mm, and spacing can be 8mm, highly can be 0.04mm.In concrete the application, the diameter of described salient point 7 can be 2-4mm, and spacing can be 6-10mm, highly can be provided with according to the needs of technology between the 0.03-0.05mm.
Described insulating barrier 2 is made by ceramic material (AL2O3, ALN etc.), during processing and manufacturing the mode of DC electrode layer by sintering or spraying is imbedded in the insulating barrier 2.The upper surface of described insulating barrier 2 preferably passes through blasting treatment.
The utility model is designed to the upper surface of insulating barrier concavo-convex, helps helium and enters slit between wafer and the insulating barrier and realize heat transfer to wafer wafer surface temperature being evenly distributed.Be mainly used in to improve the wafer engraving uniformity in the semiconductor etching process, also can be applied in other the semiconducter process.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (10)
1, a kind of electrostatic chuck comprises insulating barrier, it is characterized in that, the upper surface of described insulating barrier is concavo-convex.
2, electrostatic chuck according to claim 1 is characterized in that, the upper surface of described insulating barrier is provided with a plurality of salient points.
3, electrostatic chuck according to claim 2 is characterized in that, described a plurality of salient points evenly distribute.
4, electrostatic chuck according to claim 2 is characterized in that, described a plurality of salient points are matrix form and distribute.
5, electrostatic chuck according to claim 2 is characterized in that, in described a plurality of salient points, each salient point be adjacent salient point between distance equate.
6, electrostatic chuck according to claim 2 is characterized in that, described a plurality of salient points edge is a plurality of circle distribution in the center of circle with the insulating barrier center.
According to each described electrostatic chuck of claim 2 to 6, it is characterized in that 7, the surface configuration of described salient point is one or more in the following shape:
Circular, square, triangle, polygon.
According to each described electrostatic chuck of claim 2 to 6, it is characterized in that 8, the diameter of described salient point is 2-4mm, spacing is 6-10mm, highly is 0.03-0.05mm.
9, according to each described electrostatic chuck of claim 1 to 6, it is characterized in that described insulating barrier is by ceramic material.
10, electrostatic chuck according to claim 9 is characterized in that, the upper surface of described insulating barrier is through blasting treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101185024A CN101339916B (en) | 2007-07-06 | 2007-07-06 | Electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101185024A CN101339916B (en) | 2007-07-06 | 2007-07-06 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101339916A true CN101339916A (en) | 2009-01-07 |
| CN101339916B CN101339916B (en) | 2011-04-06 |
Family
ID=40213942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101185024A Active CN101339916B (en) | 2007-07-06 | 2007-07-06 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101339916B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594315A (en) * | 2012-08-14 | 2014-02-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment |
| CN118011061A (en) * | 2024-04-08 | 2024-05-10 | 深圳市森美协尔科技有限公司 | Chuck assembly and probe station |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100382275C (en) * | 2004-10-29 | 2008-04-16 | 东京毅力科创株式会社 | Substrate mounting table, substrate processing apparatus and substrate temperature control method |
-
2007
- 2007-07-06 CN CN2007101185024A patent/CN101339916B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594315A (en) * | 2012-08-14 | 2014-02-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment |
| CN103594315B (en) * | 2012-08-14 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of plasma processing device |
| CN118011061A (en) * | 2024-04-08 | 2024-05-10 | 深圳市森美协尔科技有限公司 | Chuck assembly and probe station |
| CN118011061B (en) * | 2024-04-08 | 2024-06-04 | 深圳市森美协尔科技有限公司 | Chuck assembly and probe station |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101339916B (en) | 2011-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |