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WO2017148126A1 - Electrostatic chuck device - Google Patents

Electrostatic chuck device Download PDF

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Publication number
WO2017148126A1
WO2017148126A1 PCT/CN2016/098250 CN2016098250W WO2017148126A1 WO 2017148126 A1 WO2017148126 A1 WO 2017148126A1 CN 2016098250 W CN2016098250 W CN 2016098250W WO 2017148126 A1 WO2017148126 A1 WO 2017148126A1
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WO
WIPO (PCT)
Prior art keywords
electrostatic chuck
insulating layer
layer
insulation layer
wafer
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Application number
PCT/CN2016/098250
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French (fr)
Chinese (zh)
Inventor
朱煜
徐登峰
许岩
杨鹏远
穆海华
成荣
唐娜娜
韩玮琦
张鸣
杨开明
Original Assignee
北京华卓精科科技股份有限公司
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Application filed by 北京华卓精科科技股份有限公司 filed Critical 北京华卓精科科技股份有限公司
Publication of WO2017148126A1 publication Critical patent/WO2017148126A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Definitions

  • the present invention relates to a semiconductor wafer processing apparatus, and more particularly to an electrostatic chuck apparatus.
  • etching ECH
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • a chuck or a chuck is often used to secure and support the wafer.
  • Common chucks or suction cups include mechanical chucks, vacuum chucks and electrostatic chucks (ESC: Electro Static Chuck).
  • the mechanical chuck fixes and supports the wafer by the mechanical arm.
  • the disadvantage is that the mechanical chuck is easy to cause damage to the wafer due to pressure, collision, etc.; the movement of the mechanical chuck in the reaction chamber is prone to particles and contamination of the wafer; When the mechanical chuck holds the wafer, it also occupies the edge area of the wafer to reduce the wafer utilization.
  • Vacuum suction cups as the name suggests, use the vacuum principle to vacuum the negative pressure to "clamp" the wafer to achieve the purpose of clamping the wafer.
  • the disadvantage is that it cannot work in a vacuum environment.
  • Electrostatic chucks use electrostatic attraction to hold and support the wafer, and electrostatic chucks have many advantages over using mechanical chucks and vacuum chucks to secure and support the wafer. Electrostatic chucks use the Coulomb force or Johnson-Labebe force (J-R: Johnsen-Rahbek) generated between the wafer and the electrode to achieve the purpose of fixing the wafer.
  • a schematic structural view of a typical electrostatic chuck in the prior art is shown in FIG. 1 and comprises an insulating layer 1, an electrode 2 and a metal base 3.
  • the corrosion resistance is poor, and the electrostatic adsorption force is lowered and the electrostatic chuck life is reduced, the electrostatic adsorption force is not uniform, and the equipment is required to be high in the manufacturing process.
  • the invention provides an electrostatic chuck device with strong corrosion resistance, uniform electrostatic adsorption force and low requirements on equipment.
  • the present invention provides the following technical solutions:
  • An electrostatic chuck device comprising a first insulating layer, a second insulating layer, an electrode layer and a metal layer, the first insulating layer being disposed above the second insulating layer, the electrode layer being disposed at the first insulating layer Between the layer and the second insulating layer, the second insulating layer is disposed on the metal layer, and the first insulating layer is a sapphire material.
  • the upper surface of the first insulating layer is uniformly provided with bumps.
  • a plurality of air passages and/or vent holes are uniformly disposed on the metal layer, and the first insulating layer, the electrode layer and the second insulating layer are respectively uniformly disposed with a plurality of air passages and/or Vent holes.
  • the second insulating layer is sapphire.
  • the present invention selects a specific cut type sapphire material as the first insulating layer material of the electrostatic chuck, and the dielectric constant thereof is improved compared with the conventional ceramic, so that after the electrostatic chuck is energized, The electric field generated on the surface of the electrode layer generates more induced charges on the surface of the wafer, thereby increasing the adsorption force of the electrostatic chuck and improving the uniformity of the adsorption force of the electrostatic chuck.
  • the sapphire material has strong corrosion resistance, and it is difficult to influence the surface morphology of the electrostatic chuck, especially bumps, grooves, pores, etc. in plasma and other special atmospheres, and can greatly improve the electrostatic chuck. The life of the product.
  • the sapphire is directly used for the first insulation layer of the electrostatic chuck after processing, which avoids the risk of high-temperature sintering of ceramics, especially the large-sized aluminum nitride ceramics in China.
  • the limitation of sintering can effectively avoid the technical barriers of foreign electrostatic chucks.
  • FIG. 1 is a schematic cross-sectional structural view of an electrostatic chuck static device in the prior art
  • FIG. 2 is a schematic cross-sectional structural view of an electrostatic chuck static device of the present invention.
  • the present invention provides an electrostatic chuck device, as shown in FIG. 2, comprising a first insulating layer 4, a second insulating layer 6, an electrode layer 5 and a metal layer 7, the first insulating layer 4 being disposed on the second insulating layer 6.
  • the electrode layer 5 is disposed between the first insulating layer 4 and the second insulating layer 6, and the second insulating layer 6 is disposed on the metal layer 7, the first insulating layer being a sapphire material.
  • the metal pedestal is connected to an RF bias as a cold trap or a heat source to control the temperature of the wafer.
  • the insulating layer is usually made of ceramic, and the ceramic layer and the metal layer are bonded by an adhesive.
  • the electrostatic chuck most of the surface ceramic layer materials are alumina ceramics or aluminum nitride ceramics, and the corrosion resistance is poor, which tends to cause the electrostatic adsorption force to decrease and the electrostatic chuck life is small, and the surface ceramics have to undergo High-temperature sintering, but ceramic sintering, especially large-size aluminum nitride ceramics, has a complicated sintering process and requires high equipment.
  • the inventors have further studied and found that the electrostatic chuck device of the present invention can better solve the above problems.
  • the present invention selects a specific cut type sapphire material as the first insulating layer material of the electrostatic chuck, and the dielectric constant thereof is improved compared with the conventional ceramic, so that after the electrostatic chuck is energized, The electric field generated on the surface of the electrode layer generates more induced charges on the surface of the wafer, thereby increasing the adsorption force of the electrostatic chuck and improving the uniformity of the adsorption force of the electrostatic chuck.
  • the sapphire material has strong corrosion resistance, and it is difficult to influence the surface morphology of the electrostatic chuck, especially bumps, grooves, pores, etc. in plasma and other special atmospheres, and can greatly improve the electrostatic chuck. The life of the product.
  • the sapphire is directly used for the first insulation layer of the electrostatic chuck after processing, which avoids the risk of high-temperature sintering of ceramics, especially the large-sized aluminum nitride ceramics in China.
  • the limitation of sintering can effectively avoid the technical barriers of foreign electrostatic chucks.
  • the upper surface of the first insulating layer 4 may be uniformly provided with bumps. This can reduce the contact area between the first insulating layer and the wafer. Due to the reduction of the contact area, the non-contact surface space has enough inert gas such as helium gas to flow, so that the temperature change on the surface of the wafer is more uniform; this structure can also provide The stronger electrostatic adsorption force makes the electrostatic adsorption of the wafer easier in the invention, shortens the time of electrostatic discharge, and can improve the efficiency of wafer processing.
  • inert gas such as helium gas
  • a plurality of air passages and/or vent holes may be uniformly disposed on the metal layer 7, and the first insulating layer, the electrode layer and the second insulating layer are preferably uniformly disposed correspondingly There are multiple airways and/or vents.
  • An inert gas such as helium gas is transmitted to the first insulating layer through the air passages and vent holes between the layers, and is uniformly transferred to the wafer, which can further improve the uniformity of cooling or heating of the wafer.
  • the second insulating layer 6 is preferably sapphire.
  • the second insulating layer may also be other insulating materials.
  • the present invention has the following beneficial effects:
  • the first insulating layer material of the electrostatic chuck of the invention adopts sapphire, which can reduce the risk of high temperature sintering of ceramics in the traditional integrated process, especially the limitation of sintering of large-sized aluminum nitride ceramics in China, and can effectively avoid foreign electrostatic chucks.
  • the sapphire material used in the invention can improve the corrosion resistance of the surface of the electrostatic chuck, and finally improve the life of the electrostatic chuck product;
  • the invention selects a specific cut type sapphire material as the first insulating layer material of the electrostatic chuck, and the dielectric constant thereof is improved compared with the conventional ceramic, so that the surface of the electrode layer is generated after the electrostatic chuck is energized.
  • the electric field generates more induced charges on the surface of the wafer, thereby increasing the adsorption force of the electrostatic chuck.
  • the scheme adopted by the invention has strong integration flexibility, and can realize electrostatic chuck integration through various processes;
  • the invention has the advantages of simple structure, easy manufacture, low cost and wide application.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

An electrostatic chuck device, relating to the technical field of semiconductor wafer processing. The electrostatic chuck device comprises: a first insulation layer (4), a second insulation layer (6), an electrode layer (5), and a metal layer (7), wherein the first insulation layer (4) is provided above the second insulation layer (6); the electrode layer (5) is provided between the first insulation layer (4) and the second insulation layer (6); the second insulation layer (6) is provided on the metal layer (7); and the first insulation layer (4) is made of a sapphire material. The electrostatic chuck device improves the surface plasma ablation resisting capability, and overcomes the difficulty of sintering a ceramic layer of the conventional electrostatic chunk under high temperature.

Description

静电卡盘装置Electrostatic chuck device 技术领域Technical field
本发明涉及半导体晶片加工装置，特别是指一种静电卡盘装置。The present invention relates to a semiconductor wafer processing apparatus, and more particularly to an electrostatic chuck apparatus.
背景技术Background technique
在集成电路(IC)制造工艺过程中，特别是刻蚀(ETCH)、物理气相沉积(PVD)及化学气相沉积(CVD)中，为固定和支撑晶片，避免处理过程中晶片出现移动或者错位现象，常使用卡盘或吸盘来固定和支撑晶片。常用的卡盘或吸盘有机械卡盘、真空吸盘与静电卡盘(简称ESC:Electro Static Chuck)。In the integrated circuit (IC) manufacturing process, especially in etching (ETCH), physical vapor deposition (PVD), and chemical vapor deposition (CVD), the wafer is fixed and supported to avoid wafer movement or misalignment during processing. A chuck or a chuck is often used to secure and support the wafer. Common chucks or suction cups include mechanical chucks, vacuum chucks and electrostatic chucks (ESC: Electro Static Chuck).
机械卡盘通过机械臂来固定和支撑晶片，其缺点是机械卡盘由于压力、碰撞等原因容易造成晶片破损；机械卡盘在反应腔室中的运动，容易产生颗粒，对晶片造成污染；同时机械卡盘在固定晶片时，还占用了晶片的边缘面积降低了晶片利用率。真空吸盘顾名思义就是采用了真空原理，利用真空负压来“吸附”晶片以达到夹持晶片的目的，其缺点是不能在真空环境下工作。The mechanical chuck fixes and supports the wafer by the mechanical arm. The disadvantage is that the mechanical chuck is easy to cause damage to the wafer due to pressure, collision, etc.; the movement of the mechanical chuck in the reaction chamber is prone to particles and contamination of the wafer; When the mechanical chuck holds the wafer, it also occupies the edge area of the wafer to reduce the wafer utilization. Vacuum suction cups, as the name suggests, use the vacuum principle to vacuum the negative pressure to "clamp" the wafer to achieve the purpose of clamping the wafer. The disadvantage is that it cannot work in a vacuum environment.
静电卡盘采用静电引力来固定和支撑晶片，与采用机械卡盘和真空卡盘来固定和支撑晶片相比，静电卡盘具有很多优势。静电卡盘是利用晶片和电极之间产生的库仑力或约翰逊-拉别克力(简称J-R：Johnsen-Rahbek)来达到固定晶片的目的。现有技术中一种典型的静电卡盘的结构示意图如图1所示，包括绝缘层1、电极2和金属基座3组成。这种静电卡盘在使用时，抗腐蚀能力差，易造成静电吸附力下降和静电卡盘寿命减小，静电吸附力不均匀，而且在制造的过程中对设备要求高。Electrostatic chucks use electrostatic attraction to hold and support the wafer, and electrostatic chucks have many advantages over using mechanical chucks and vacuum chucks to secure and support the wafer. Electrostatic chucks use the Coulomb force or Johnson-Labebe force (J-R: Johnsen-Rahbek) generated between the wafer and the electrode to achieve the purpose of fixing the wafer. A schematic structural view of a typical electrostatic chuck in the prior art is shown in FIG. 1 and comprises an insulating layer 1, an electrode 2 and a metal base 3. When the electrostatic chuck is used, the corrosion resistance is poor, and the electrostatic adsorption force is lowered and the electrostatic chuck life is reduced, the electrostatic adsorption force is not uniform, and the equipment is required to be high in the manufacturing process.
发明内容Summary of the invention
本发明提供一种抗腐蚀能力强、静电吸附力均匀且对设备要求低的静电卡盘装置。The invention provides an electrostatic chuck device with strong corrosion resistance, uniform electrostatic adsorption force and low requirements on equipment.
为解决上述技术问题，本发明提供技术方案如下： In order to solve the above technical problem, the present invention provides the following technical solutions:
一种静电卡盘装置，包括第一绝缘层、第二绝缘层、电极层和金属层，所述第一绝缘层设置在第二绝缘层的上方，所述电极层设置在所述第一绝缘层和第二绝缘层之间，所述第二绝缘层设置在所述金属层上，所述第一绝缘层为蓝宝石材料。An electrostatic chuck device comprising a first insulating layer, a second insulating layer, an electrode layer and a metal layer, the first insulating layer being disposed above the second insulating layer, the electrode layer being disposed at the first insulating layer Between the layer and the second insulating layer, the second insulating layer is disposed on the metal layer, and the first insulating layer is a sapphire material.
进一步的，所述第一绝缘层的上表面均匀地设置有凸点。Further, the upper surface of the first insulating layer is uniformly provided with bumps.
进一步的，所述金属层上均匀地设置有多个气道和/或通气孔，所述第一绝缘层、电极层和第二绝缘层上分别对应地均匀设置有多个气道和/或通气孔。Further, a plurality of air passages and/or vent holes are uniformly disposed on the metal layer, and the first insulating layer, the electrode layer and the second insulating layer are respectively uniformly disposed with a plurality of air passages and/or Vent holes.
进一步的，所述第二绝缘层为蓝宝石。Further, the second insulating layer is sapphire.
本发明具有以下有益效果：The invention has the following beneficial effects:
与现有技术相比，本发明选用特定切型的蓝宝石材料作为静电卡盘第一绝缘层材料，与传统陶瓷相比，其介电常数有一定的提高，从而使得静电卡盘在通电后，电极层表面所产生的电场在晶片的表面产生更多的感应电荷，从而可增加静电卡盘的吸附力，提高静电卡盘吸附力的均匀性。而且，蓝宝石材料的耐腐蚀能力强，在等离子体以及其他特殊气氛环境下，不易对静电卡盘的表面形貌，特别是凸点、沟槽、气孔等造成影响，可以极大地提高静电卡盘产品的寿命。此外，大尺寸蓝宝石的生产技术成熟，国内供应链齐备，价格合理，蓝宝石经加工后直接用于静电卡盘第一绝缘层，规避了陶瓷高温烧结的风险，特别是国内大尺寸氮化铝陶瓷烧结的限制，可有效规避国外静电卡盘的技术壁垒。Compared with the prior art, the present invention selects a specific cut type sapphire material as the first insulating layer material of the electrostatic chuck, and the dielectric constant thereof is improved compared with the conventional ceramic, so that after the electrostatic chuck is energized, The electric field generated on the surface of the electrode layer generates more induced charges on the surface of the wafer, thereby increasing the adsorption force of the electrostatic chuck and improving the uniformity of the adsorption force of the electrostatic chuck. Moreover, the sapphire material has strong corrosion resistance, and it is difficult to influence the surface morphology of the electrostatic chuck, especially bumps, grooves, pores, etc. in plasma and other special atmospheres, and can greatly improve the electrostatic chuck. The life of the product. In addition, the production technology of large-size sapphire is mature, the domestic supply chain is complete, and the price is reasonable. The sapphire is directly used for the first insulation layer of the electrostatic chuck after processing, which avoids the risk of high-temperature sintering of ceramics, especially the large-sized aluminum nitride ceramics in China. The limitation of sintering can effectively avoid the technical barriers of foreign electrostatic chucks.
附图说明DRAWINGS
图1现有技术中的静电卡盘静装置的剖面结构示意图；1 is a schematic cross-sectional structural view of an electrostatic chuck static device in the prior art;
图2为本发明的静电卡盘静装置的剖面结构示意图。2 is a schematic cross-sectional structural view of an electrostatic chuck static device of the present invention.
具体实施方式detailed description
为使本发明要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。 The technical problems, the technical solutions, and the advantages of the present invention will be more clearly described in the following description.
本发明提供一种静电卡盘装置，如图2所示，包括第一绝缘层4、第二绝缘层6、电极层5和金属层7，第一绝缘层4设置在第二绝缘层6的上方，电极层5设置在第一绝缘层4和第二绝缘层6之间，第二绝缘层6设置在金属层7上，第一绝缘层为蓝宝石材料。The present invention provides an electrostatic chuck device, as shown in FIG. 2, comprising a first insulating layer 4, a second insulating layer 6, an electrode layer 5 and a metal layer 7, the first insulating layer 4 being disposed on the second insulating layer 6. Above, the electrode layer 5 is disposed between the first insulating layer 4 and the second insulating layer 6, and the second insulating layer 6 is disposed on the metal layer 7, the first insulating layer being a sapphire material.
发明人经研究发现，金属基座接入RF偏压，作为冷阱或供热源，来控制晶片的温度。一般绝缘层通常用陶瓷制造，陶瓷层和金属层之间用一种粘结剂来粘结。这种静电卡盘在使用时，由于表面陶瓷层材料多数为氧化铝陶瓷或氮化铝陶瓷，其抗腐蚀能力差，易造成静电吸附力下降和静电卡盘寿命较小，且表面陶瓷需经历高温烧结，但陶瓷烧结特别是大尺寸氮化铝陶瓷烧结工艺复杂，对设备要求高。发明人经进一步研究发现，本发明的静电卡盘装置可以较好的解决上述问题。The inventors have found through research that the metal pedestal is connected to an RF bias as a cold trap or a heat source to control the temperature of the wafer. Generally, the insulating layer is usually made of ceramic, and the ceramic layer and the metal layer are bonded by an adhesive. When the electrostatic chuck is used, most of the surface ceramic layer materials are alumina ceramics or aluminum nitride ceramics, and the corrosion resistance is poor, which tends to cause the electrostatic adsorption force to decrease and the electrostatic chuck life is small, and the surface ceramics have to undergo High-temperature sintering, but ceramic sintering, especially large-size aluminum nitride ceramics, has a complicated sintering process and requires high equipment. The inventors have further studied and found that the electrostatic chuck device of the present invention can better solve the above problems.
与现有技术相比，本发明选用特定切型的蓝宝石材料作为静电卡盘第一绝缘层材料，与传统陶瓷相比，其介电常数有一定的提高，从而使得静电卡盘在通电后，电极层表面所产生的电场在晶片的表面产生更多的感应电荷，从而可增加静电卡盘的吸附力，提高静电卡盘吸附力的均匀性。而且，蓝宝石材料的耐腐蚀能力强，在等离子体以及其他特殊气氛环境下，不易对静电卡盘的表面形貌，特别是凸点、沟槽、气孔等造成影响，可以极大地提高静电卡盘产品的寿命。此外，大尺寸蓝宝石的生产技术成熟，国内供应链齐备，价格合理，蓝宝石经加工后直接用于静电卡盘第一绝缘层，规避了陶瓷高温烧结的风险，特别是国内大尺寸氮化铝陶瓷烧结的限制，可有效规避国外静电卡盘的技术壁垒。Compared with the prior art, the present invention selects a specific cut type sapphire material as the first insulating layer material of the electrostatic chuck, and the dielectric constant thereof is improved compared with the conventional ceramic, so that after the electrostatic chuck is energized, The electric field generated on the surface of the electrode layer generates more induced charges on the surface of the wafer, thereby increasing the adsorption force of the electrostatic chuck and improving the uniformity of the adsorption force of the electrostatic chuck. Moreover, the sapphire material has strong corrosion resistance, and it is difficult to influence the surface morphology of the electrostatic chuck, especially bumps, grooves, pores, etc. in plasma and other special atmospheres, and can greatly improve the electrostatic chuck. The life of the product. In addition, the production technology of large-size sapphire is mature, the domestic supply chain is complete, and the price is reasonable. The sapphire is directly used for the first insulation layer of the electrostatic chuck after processing, which avoids the risk of high-temperature sintering of ceramics, especially the large-sized aluminum nitride ceramics in China. The limitation of sintering can effectively avoid the technical barriers of foreign electrostatic chucks.
作为本发明的一种改进，第一绝缘层4的上表面可以均匀地设置有凸点。这样可以减少第一绝缘层和晶片的接触面积，由于接触面积的减少，使得非接触面空间有足够多的氦气等惰性气体流通，使得晶片表面的温度变化更加均匀；这种结构还可以提供更强的静电吸附力，使得本发明对晶片的静电吸附更容易，缩短静电释放的时间，可以提高晶片加工的效率。As a modification of the present invention, the upper surface of the first insulating layer 4 may be uniformly provided with bumps. This can reduce the contact area between the first insulating layer and the wafer. Due to the reduction of the contact area, the non-contact surface space has enough inert gas such as helium gas to flow, so that the temperature change on the surface of the wafer is more uniform; this structure can also provide The stronger electrostatic adsorption force makes the electrostatic adsorption of the wafer easier in the invention, shortens the time of electrostatic discharge, and can improve the efficiency of wafer processing.
作为本发明的另一种改进，金属层7上可以均匀地设置有多个气道和/或通气孔，第一绝缘层、电极层和第二绝缘层上优选分别对应地均匀设置 有多个气道和/或通气孔。氦气等惰性气体通过各层之间的气道和通气孔传输到第一绝缘层，再均匀的传递到晶片，这样可以进一步提高晶片温度冷却或受热的均匀性。As another improvement of the present invention, a plurality of air passages and/or vent holes may be uniformly disposed on the metal layer 7, and the first insulating layer, the electrode layer and the second insulating layer are preferably uniformly disposed correspondingly There are multiple airways and/or vents. An inert gas such as helium gas is transmitted to the first insulating layer through the air passages and vent holes between the layers, and is uniformly transferred to the wafer, which can further improve the uniformity of cooling or heating of the wafer.
本发明中，第二绝缘层6优选为蓝宝石。第二绝缘层还可以是其他绝缘材料。In the present invention, the second insulating layer 6 is preferably sapphire. The second insulating layer may also be other insulating materials.
综上，本发明具有以下有益效果：In summary, the present invention has the following beneficial effects:
1、本发明的静电卡盘的第一绝缘层材料采用蓝宝石，可减少了传统集成工艺中陶瓷高温烧结的风险，特别是国内大尺寸氮化铝陶瓷烧结的限制，可有效规避国外静电卡盘的技术壁垒；1. The first insulating layer material of the electrostatic chuck of the invention adopts sapphire, which can reduce the risk of high temperature sintering of ceramics in the traditional integrated process, especially the limitation of sintering of large-sized aluminum nitride ceramics in China, and can effectively avoid foreign electrostatic chucks. Technical barriers;
2、本发明所采用的蓝宝石材料可以提升静电卡盘表面的抗腐蚀能力，最终提高静电卡盘产品的寿命；2. The sapphire material used in the invention can improve the corrosion resistance of the surface of the electrostatic chuck, and finally improve the life of the electrostatic chuck product;
3、本发明选用特定切型的蓝宝石材料作为静电卡盘第一绝缘层材料，与传统陶瓷相比，其介电常数有一定的提高，从而使得静电卡盘在通电后，电极层表面所产生的电场在晶片的表面产生更多的感应电荷，从而可增加静电卡盘的吸附力。3. The invention selects a specific cut type sapphire material as the first insulating layer material of the electrostatic chuck, and the dielectric constant thereof is improved compared with the conventional ceramic, so that the surface of the electrode layer is generated after the electrostatic chuck is energized. The electric field generates more induced charges on the surface of the wafer, thereby increasing the adsorption force of the electrostatic chuck.
4、本发明采用的方案集成灵活性强，可以通过多种工艺实现静电卡盘集成；4. The scheme adopted by the invention has strong integration flexibility, and can realize electrostatic chuck integration through various processes;
5、本发明结构简单，制造容易，成本较低，可广泛推广使用。5. The invention has the advantages of simple structure, easy manufacture, low cost and wide application.
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。 The above is a preferred embodiment of the present invention, and it should be noted that those skilled in the art can also make several improvements and retouchings without departing from the principles of the present invention. It should be considered as the scope of protection of the present invention.

Claims (4)

  1. 一种静电卡盘装置，其特征在于，包括第一绝缘层、第二绝缘层、电极层和金属层，所述第一绝缘层设置在第二绝缘层的上方，所述电极层设置在所述第一绝缘层和第二绝缘层之间，所述第二绝缘层设置在所述金属层上，所述第一绝缘层为蓝宝石材料。An electrostatic chuck device, comprising: a first insulating layer, a second insulating layer, an electrode layer and a metal layer, wherein the first insulating layer is disposed above the second insulating layer, and the electrode layer is disposed at the Between the first insulating layer and the second insulating layer, the second insulating layer is disposed on the metal layer, and the first insulating layer is a sapphire material.
  2. 根据权利要求1所述的静电卡盘装置，其特征在于，所述第一绝缘层的上表面均匀地设置有凸点。The electrostatic chuck device according to claim 1, wherein the upper surface of the first insulating layer is uniformly provided with bumps.
  3. 根据权利要求1所述的静电卡盘装置，其特征在于，所述金属层上均匀地设置有多个气道和/或通气孔，所述第一绝缘层、电极层和第二绝缘层上分别对应地均匀设置有多个气道和/或通气孔。The electrostatic chuck device according to claim 1, wherein a plurality of air passages and/or vent holes are uniformly disposed on said metal layer, said first insulating layer, said electrode layer and said second insulating layer A plurality of air passages and/or vent holes are uniformly disposed correspondingly.
  4. 根据权利要求1至3中任一所述的静电卡盘装置，其特征在于，所述第二绝缘层为蓝宝石。 The electrostatic chuck device according to any one of claims 1 to 3, wherein the second insulating layer is sapphire.
PCT/CN2016/098250 2016-03-03 2016-09-06 Electrostatic chuck device WO2017148126A1 (en)

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CN108538776B (en) * 2018-03-29 2021-11-16 北京北方华创微电子装备有限公司 Electrostatic chuck and method of manufacturing the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413360A (en) * 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
CN1777987A (en) * 2003-04-22 2006-05-24 艾克塞利斯技术公司 High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
CN101405857A (en) * 2006-03-17 2009-04-08 奥立孔美国公司 Apparatus and method for carrying substrates
US8987639B2 (en) * 2012-09-05 2015-03-24 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with radiative heating
CN205406504U (en) * 2016-03-03 2016-07-27 北京华卓精科科技股份有限公司 Static chuck device of graphite alkene electrode
CN205406505U (en) * 2016-03-03 2016-07-27 北京华卓精科科技股份有限公司 Electrostatic chuck device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413360A (en) * 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
CN1777987A (en) * 2003-04-22 2006-05-24 艾克塞利斯技术公司 High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
CN101405857A (en) * 2006-03-17 2009-04-08 奥立孔美国公司 Apparatus and method for carrying substrates
US8987639B2 (en) * 2012-09-05 2015-03-24 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with radiative heating
CN205406504U (en) * 2016-03-03 2016-07-27 北京华卓精科科技股份有限公司 Static chuck device of graphite alkene electrode
CN205406505U (en) * 2016-03-03 2016-07-27 北京华卓精科科技股份有限公司 Electrostatic chuck device

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