CN101246822A - Laser etching and trench digging method of semiconductor chip - Google Patents
Laser etching and trench digging method of semiconductor chip Download PDFInfo
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- CN101246822A CN101246822A CN 200810018637 CN200810018637A CN101246822A CN 101246822 A CN101246822 A CN 101246822A CN 200810018637 CN200810018637 CN 200810018637 CN 200810018637 A CN200810018637 A CN 200810018637A CN 101246822 A CN101246822 A CN 101246822A
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Abstract
The invention relates to a method for laser etching trenching of a semiconductor wafer, characterized in: a semiconductor wafer surface is vertically radiated by a laser beam, with the relative movement between the laser beam and the semiconductor wafer, the laser beam etches the material on the surface of the radiation area by way of melting and evaporating, thus to form a trench on the semiconductor wafer surface; the laser beam is ultraviolet laser, the wavelength is 200 to 400nm, the frequency is 30 to 50 KHz, the single pulse energy is 100 to 200 mJ. The invention relates to the field of semiconductor manufacture technology, which is environment-friendly and efficient, overcomes the drawbacks of past method that trenches by wet etching or dry etching, improves the accuracy, stability and uniformity, lowers the cost, and enriches the processing technology for surface etching trenching of semiconductor wafer.
Description
Technical field
The present invention relates to semiconductor fabrication, be specifically related to a kind of method of utilizing laser etching and trench digging at semiconductor wafer surface.This method is environment-friendly high-efficiency not only, has simplified the processing technology of ditching in the conventional semiconductors surface simultaneously, has improved the trench digging precision, has reduced cost.
Background technology
In the semiconductor core machining process, several key steps such as extensive use oxidation, deposit, photoetching, etching, ion injection and metallization, requisite process means after trench digging on the semiconductor wafer then is graph exposure.
In the prior art, so-called trench digging is exactly the geometric figure that utilizes on the mask (Mask), on the photosensitive film (photoresist) that figure transfer is covered to the semiconductor wafer by photochemical reaction, these figures can define the various zoness of different of semiconductor machining, such as ion implanted region, contact hole and pressure welding pad etc.For the final figure that needs that forms, also will be once more with the figure transfer on the photoresist to the semiconductor wafer of lower floor.This figure transfer is to utilize etching technics optionally not form groove with being removed by the zone of photoresist masking on the wafer, and finishes the trench digging process.Thereby can proceed processes such as ion injection, passivation protection, metallization,, can carry out chemical vapor deposition (CVD) and glassivation behind the trench digging on the surface of PN junction and handle, realize the high reliability of device such as in the course of processing of GPP diode.
At present the trench digging technology of semiconductor wafer mainly contains two big classes, i.e. wet etching and dry etching, and the both selectively carries out etching and trench digging after being operations such as the coating of passing through photoresist, baking, exposure, development, baking under the protection of photoresist.
Wet etching is wafer to be immersed in the chemical etchant or with chemical etchant spray wafer surface is finished etching and trench digging by chemical reaction technology.The change in concentration of etch period, etching liquid and temperature control are all determining the consistency of etching, and the precision of graph copying then depended on the isotropism/technological parameters such as different in nature etching of etching, inscribe, selectivity and side.Dry etching is to be the lithographic method of main medium with gas, wherein, mainly contains plasma etching, ion beam etching and reactive ion etching method.Plasma etching is that power supply energy is created a high-frequency electric field in reative cell at the indoor reacting gas that charges into of vacuum reaction, and mist is excited becomes plasmoid, finishes etching by chemical reaction.Ion beam etching also is ise, it is a kind of physical technology, wafer is fixed on the indoor negative pole fixture of vacuum reaction during etching, in reative cell, import argon gas stream subsequently, argon gas just is subjected to the effect of the high energy electron line of a pair of anode and cathode, is ionized to be positively charged upper state, thereby is attracted to wafer on the negative pole fixture, and constantly be accelerated and bombard and enter the chip exposed part, explode sub-fraction from wafer surface.Reactive ion etching combines the principle of plasma etching and ion beam etching, and is similar with plasma etching on the system configuration, has ion polishing ability simultaneously.
Advantages such as wet etching is widely used so far as traditional lithographic method always, and it is simple and crude that this method has equipment requirements, and operation simply is easy to grasp, and has certain mass production capabilities, and cost effectiveness is good.But also there are many limitation in it, such as the pattern dimension that is only applicable to more than 3 microns, belonging to isotropic etching causes avris to form the slope, need to cooperate flushing and drying steps, the chemicals that uses has pollution, the consistency control of producing in batches is difficulty very, and because the cohesion inefficacy of photoresist can cause adverse consequencess such as etching or undercutting.
Dry etching is applicable to dimension of picture less than 3 microns meticulous etching, and wafer does not need liquid chemical or flushing.Yet in dry etching, residual oxygen meeting etching photoresist, and the temperature in the reative cell can be up to 200 ℃, certain high temperature can be cured the state of removing from wafer to being difficult to photoresist, the photoresist temperature influence also can make pattern deformation because of liquidity preference, a undesirable influence is photoresist even can becomes the avris polymer deposition is attempted case at quarter avris in plasma etching, the selectivity of ion beam etching ion polishing that belongs to physical technology is very poor, and the radiation damage that forms because of ionization also is a problem in addition.
Summary of the invention
The objective of the invention is to provide a kind of and utilize the new method of laser etching and trench digging, overcome and utilize wet method or the dry etching existing deficiency of ditching in the past, enrich the processing technology of semiconductor wafer surface etching and trench digging at semiconductor wafer surface.
For achieving the above object, the technical solution used in the present invention is: a kind of laser etching and trench digging method of semiconductor chip, utilize laser beam vertical radiation semiconductor wafer surface, follow relatively moving between laser beam and the semiconductor wafer, laser beam forms groove with this at semiconductor wafer surface with the material on the mode etching radiation area top layer of fusing and evaporation on mobile route; Described laser beam adopts Ultra-Violet Laser, and wavelength is 200～400 nanometers, and frequency is 30～50 kilo hertzs, and single pulse energy is 100～200 little joules.
Related content in the technique scheme is explained as follows:
1, in the such scheme, can control the each etching depth of radiation area skin-material by changing laser beam single pulse energy, frequency and relative moving speed, on same position, repeat its etching depth stack of etching about the laser ablation degree of depth.Generally speaking, laser beam single pulse energy and frequency and etching depth are proportional, and relative moving speed and etching depth are inverse ratio.
2, in the such scheme, can control the each etching width of radiation area skin-material by changing the LASER SPECKLE size, its etching width stack of translation etching path about the laser ablation width.
3, in the such scheme, relatively moving between described laser beam and the semiconductor wafer generally realizes by the high-precision motion mechanism that can control automatically, such as high accuracy X, Y, Z shaft movement mechanism; The high-precision two-dimensional platform adds high accuracy rotation platform etc., and these are all provided by prior art.
4, in the such scheme, after laser ablation forms groove, semiconductor wafer is carried out successively the reprocessing of the following step:
(1), removes surface oxide layer
Semiconductor wafer is put into hydrofluoric acid cushioning liquid rock 5～10min, remove surface oxide layer, described hydrofluoric acid cushioning liquid presses 1～3 by hydrofluoric acid, ammonium fluoride and water: 5: 5～10 mass ratio is formulated; Take out then and put into demineralized water tank and wash;
(2), chemical polishing
Then semiconductor wafer is put into nitric acid: hydrofluoric acid: glacial acetic acid rocks and carried out chemical polishing in 80～120 seconds by the nitration mixture of 18: 1: 1 mass ratio preparation;
(3), clean
Clean and successively in cleaning fluid SC1 and cleaning fluid SC2, carry out, 75 ± 5 ℃ of control solution temperatures, described cleaning fluid SC1 is formulated by 1: 1: 5 mass ratio by ammoniacal liquor, hydrogen peroxide and pure water, cleaning fluid SC2 is formulated by 1: 1: 5 mass ratio by hydrochloric acid, hydrogen peroxide and pure water, uses pure water rinsing then;
(4), drying
Semiconductor wafer after cleaning is dried with drier, put into baking oven then at N
2Protection oven dry down, standby.
Operation principle of the present invention is:
Because the technique scheme utilization, the present invention compared with prior art has following advantage and effect:
1, cooked mode advanced person, the efficient height
Superfine laser beam after the focusing can be removed the pointwise of body surface material as cutter, and its advance is that the course of processing is untouchable processing, does not produce mechanical presses or mechanical stress, therefore can not damage the processed semiconductor wafer.
2, processing is meticulous, stable, and thermal effect is little, high conformity
Because adopting wavelength is the Ultra-Violet Laser (for cold light source) of 200～400 nanometers, and small-sized behind the laser focusing, the heat-affected zone is little, process meticulous, stablize so high conformity.
3, cost is low, and is full-automatic, easy to operate
" cutter " that laser processing is used is the luminous point after focusing on, and do not need additionally to increase miscellaneous equipment and material, if laser energy operate as normal, just can long-time continuous processing.Laser processing speed is fast, and is with low cost.Laser processing does not need human intervention by computer controlled automatic during production.
4, compliance with environmental protection requirements
Laser processing is nontoxic, and product processed surmounts various countries' production environmental requirement, is a kind of processing mode of safely cleaning.
Description of drawings
Accompanying drawing 1 is the laser light spectrogram;
Accompanying drawing 2 is laser ablation schematic diagram of the present invention;
Accompanying drawing 3 is for containing the semiconductor wafer of many diode chip for backlight unit.
In the above accompanying drawing: 1, laser; 2, laser beam; 3, semiconductor wafer; 4, workbench; 5, crystal grain; 6, groove.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment: a kind of laser etching and trench digging method of semiconductor chip forms groove and reprocessing two parts are formed by laser ablation.
As shown in Figure 2, it is that semiconductor wafer 3 is fixed on the workbench 4 by anchor clamps that laser ablation forms groove, laser beam 2 vertical radiation semiconductor wafers 3 surfaces that utilize laser 1 to send, be accompanied by relatively moving between laser beam 1 and the semiconductor wafer 3, laser beam 2 forms groove with this on semiconductor wafer 3 surfaces with the material on the mode etching radiation area top layer of fusing and evaporation on mobile route.
Described laser beam 2 adopts Ultra-Violet Lasers, and wavelength is 200～400 nanometers, sees shown in Figure 1ly, and this laser has less region of thermal effect for the cold laser light source, therefore can not damage the semiconductor lattice beyond the radiation area.In addition, the operating frequency of laser beam 2 is selected in 30～50 kilohertz range, and single pulse energy is selected 100～200 little joules of scopes.
Adopt laser beam 2 in the groove figure that semiconductor wafer 3 surfaces form, depend on the track that relatively moves between laser beam 2 and the semiconductor wafer 3.Relatively moving between described laser beam and the semiconductor wafer generally realizes by the high-precision motion mechanism that can control automatically, such as high accuracy X, Y, Z shaft movement mechanism; The high-precision two-dimensional platform adds high accuracy rotation platform etc., and these are all provided by prior art.
In laser beam 2 etching processes, can control the each etching depth of radiation area skin-material by the single pulse energy, frequency and the relative moving speed that change laser beam 2.On same position, repeat its etching depth stack of etching.Generally speaking, laser beam single pulse energy and frequency and etching depth are proportional, and relative moving speed and etching depth are inverse ratio.And the laser ablation width can be controlled the each etching width of radiation area skin-material by changing the LASER SPECKLE size, its etching width stack of translation etching path.
Utilize the method for laser ablation to make the semiconductor wafer surface groove, be in laser beam 2 radiation back, semiconductor wafer 3 surface materials melt (material can be silicon, silicon dioxide, silicon nitride, polysilicon, metal etc.) here, thereby finished the processing of groove, formed groove easily with various patterns.The main feature of laser processing is exactly environmental protection, accurate and efficient etc., it is to process by the noncontact mode, ability with accurate processed complex pattern, nontoxic and keep the operational environment of safely cleaning, improved working (machining) efficiency, can reduce manufacturing cost and overcome the disadvantage that other conventional methods are brought, it is poor to form the ditch with accurate and different pattern.
As shown in Figure 3, in the course of processing of GPP diode, handle can carrying out chemical vapor deposition (CVD) and glassivation on the block semiconductor wafer 3 after by open channels 5 on the surface of PN junction, thereby produce 4400 GPP diode crystal particles 6 on a block semiconductor wafer 3, the size of each crystal grain 6 is 50mil * 50mil (mil is a mil).Following table is given in the one group of data that adopts the laser ablation groove on 4 inches of φ (per inch the is 25.4 millimeters) semiconductor wafer, to further specify the situation of present embodiment:
| Gash depth (μ m) | Groove width (mm) | Control Parameter | The cutting time (min) | |||
| Wavelength (nm) | Frequency (KHz) | Single pulse energy (μ J) | Average power (W) | |||
| 5～10 | 0.5 | 355 | 40 | 125 | 5 | 10～15 |
| 10～15 | 0.5 | 355 | 40 | 125 | 5 | 15～20 |
| 15～20 | 0.5 | 355 | 40 | 125 | 5 | 20～25 |
| 20～25 | 0.5 | 355 | 40 | 125 | 5 | 25～30 |
| 25～30 | 0.5 | 355 | 40 | 125 | 5 | 30～35 |
| 30～35 | 0.5 | 355 | 40 | 125 | 5 | 35～40 |
| 35～40 | 0.5 | 355 | 40 | 125 | 5 | 40～45 |
| 40～45 | 0.5 | 355 | 40 | 125 | 5 | 45～50 |
| 45～50 | 0.5 | 355 | 40 | 125 | 5 | 50～60 |
After laser ablation forms groove, semiconductor wafer 3 is carried out successively the reprocessing of the following step:
(1), removes surface oxide layer
(2), chemical polishing
Then semiconductor wafer 3 is put into nitric acid: hydrofluoric acid: glacial acetic acid rocks and carried out chemical polishing in 80～120 seconds by the nitration mixture of 18: 1: 1 mass ratio preparation, and temperature is a room temperature.
(3), clean
Pure water=1: 1: 5) and cleaning fluid SC2 (hydrochloric acid: hydrogen peroxide: carry out pure water=1: 1: 5), control 75 ± 5 ℃ of solution temperatures, cleaned 10 minutes, clean successively (ammoniacal liquor: hydrogen peroxide: then towards pure water 10min/ groove, totally 2 grooves at cleaning fluid SC1.
(4), drying
Semiconductor wafer 3 usefulness driers after cleaning are dried, put into baking oven then at N
2Protection oven dry down, standby.
The foregoing description only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (3)
1, a kind of laser etching and trench digging method of semiconductor chip, it is characterized in that: utilize laser beam vertical radiation semiconductor wafer surface, follow relatively moving between laser beam and the semiconductor wafer, laser beam forms groove with this at semiconductor wafer surface with the material on the mode etching radiation area top layer of fusing and evaporation on mobile route; Described laser beam adopts Ultra-Violet Laser, and wavelength is 200～400 nanometers, and frequency is 30～50 kilo hertzs, and single pulse energy is 100～200 little joules.
2, laser etching and trench digging method according to claim 1, it is characterized in that: control the each etching depth of radiation area skin-material by changing laser beam single pulse energy, frequency and relative moving speed, on same position, repeat its etching depth stack of etching; Control the each etching width of radiation area skin-material by changing the LASER SPECKLE size, its etching width stack of translation etching path.
3, laser etching and trench digging method according to claim 1 is characterized in that: after laser ablation forms groove, semiconductor wafer is carried out successively the reprocessing of the following step:
(1), removes surface oxide layer
Semiconductor wafer is put into hydrofluoric acid cushioning liquid rock 5～10min, remove surface oxide layer, described hydrofluoric acid cushioning liquid presses 1～3 by hydrofluoric acid, ammonium fluoride and water: 5: 5～10 mass ratio is formulated; Take out then and put into demineralized water tank and wash;
(2), chemical polishing
Then semiconductor wafer is put into nitric acid: hydrofluoric acid: glacial acetic acid rocks and carried out chemical polishing in 80～120 seconds by the nitration mixture of 18: 1: 1 mass ratio preparation;
(3), clean
Clean and successively in cleaning fluid SC1 and cleaning fluid SC2, carry out, 75 ± 5 ℃ of control solution temperatures, described cleaning fluid SC1 is formulated by 1: 1: 5 mass ratio by ammoniacal liquor, hydrogen peroxide and pure water, cleaning fluid SC2 is formulated by 1: 1: 5 mass ratio by hydrochloric acid, hydrogen peroxide and pure water, uses pure water rinsing then;
(4), drying
Semiconductor wafer after cleaning is dried with drier, put into baking oven then at N
2Protection oven dry down, standby.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810018637 CN101246822A (en) | 2008-03-03 | 2008-03-03 | Laser etching and trench digging method of semiconductor chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200810018637 CN101246822A (en) | 2008-03-03 | 2008-03-03 | Laser etching and trench digging method of semiconductor chip |
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| CN101246822A true CN101246822A (en) | 2008-08-20 |
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| CN102122686A (en) * | 2011-01-17 | 2011-07-13 | 泉州市金太阳电子科技有限公司 | Method for manufacturing light-emitting diode |
| CN102555518A (en) * | 2010-12-27 | 2012-07-11 | 无锡华润上华科技有限公司 | Marking method for wafer |
| CN102658424A (en) * | 2012-05-18 | 2012-09-12 | 杭州士兰明芯科技有限公司 | System and method for machining LED (light-emitting diode) substrate by laser |
| CN102672355A (en) * | 2012-05-18 | 2012-09-19 | 杭州士兰明芯科技有限公司 | Scribing method of LED (light-emitting diode) substrate |
| CN102699537A (en) * | 2012-05-18 | 2012-10-03 | 杭州士兰明芯科技有限公司 | System and method for peeling LED substrates by using laser |
| CN102931299A (en) * | 2012-11-20 | 2013-02-13 | 无锡华润华晶微电子有限公司 | Laser etching method for light-emitting diode |
| CN103184113A (en) * | 2011-12-31 | 2013-07-03 | 北大方正集团有限公司 | Silica removing solution as well as preparation method and application thereof |
| CN103208416A (en) * | 2013-04-03 | 2013-07-17 | 无锡华润上华半导体有限公司 | Method for cleaning and drying etched cavity structure |
| CN104396015A (en) * | 2012-05-03 | 2015-03-04 | 内克西斯公司 | Laser-etched stacks of thin layers for photovoltaic cell connections |
| CN107685196A (en) * | 2017-07-14 | 2018-02-13 | 中国科学院微电子研究所 | Method and device for processing wafer by laser |
| CN112171504A (en) * | 2020-09-30 | 2021-01-05 | 李善龙 | Wafer etching back grinding machine |
| CN112872610A (en) * | 2021-01-28 | 2021-06-01 | 常州大学 | Method and device for manufacturing trench MOSFET (Metal-oxide-semiconductor field Effect transistor) based on laser |
| CN113066721A (en) * | 2021-03-18 | 2021-07-02 | 扬州虹扬科技发展有限公司 | Manufacturing method of wafer for vehicle |
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- 2008-03-03 CN CN 200810018637 patent/CN101246822A/en active Pending
Cited By (19)
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| CN102555518A (en) * | 2010-12-27 | 2012-07-11 | 无锡华润上华科技有限公司 | Marking method for wafer |
| CN102122686A (en) * | 2011-01-17 | 2011-07-13 | 泉州市金太阳电子科技有限公司 | Method for manufacturing light-emitting diode |
| CN103184113A (en) * | 2011-12-31 | 2013-07-03 | 北大方正集团有限公司 | Silica removing solution as well as preparation method and application thereof |
| CN103184113B (en) * | 2011-12-31 | 2014-07-23 | 北大方正集团有限公司 | Silica removing solution as well as preparation method and application thereof |
| CN104396015A (en) * | 2012-05-03 | 2015-03-04 | 内克西斯公司 | Laser-etched stacks of thin layers for photovoltaic cell connections |
| CN102699537A (en) * | 2012-05-18 | 2012-10-03 | 杭州士兰明芯科技有限公司 | System and method for peeling LED substrates by using laser |
| CN102699537B (en) * | 2012-05-18 | 2015-11-04 | 杭州士兰明芯科技有限公司 | The system and method for laser lift-off LED substrate |
| CN102672355B (en) * | 2012-05-18 | 2015-05-13 | 杭州士兰明芯科技有限公司 | Scribing method of LED (light-emitting diode) substrate |
| CN102672355A (en) * | 2012-05-18 | 2012-09-19 | 杭州士兰明芯科技有限公司 | Scribing method of LED (light-emitting diode) substrate |
| CN102658424A (en) * | 2012-05-18 | 2012-09-12 | 杭州士兰明芯科技有限公司 | System and method for machining LED (light-emitting diode) substrate by laser |
| CN102658424B (en) * | 2012-05-18 | 2015-05-13 | 杭州士兰明芯科技有限公司 | System and method for machining LED (light-emitting diode) substrate by laser |
| CN102931299A (en) * | 2012-11-20 | 2013-02-13 | 无锡华润华晶微电子有限公司 | Laser etching method for light-emitting diode |
| CN103208416A (en) * | 2013-04-03 | 2013-07-17 | 无锡华润上华半导体有限公司 | Method for cleaning and drying etched cavity structure |
| CN107685196A (en) * | 2017-07-14 | 2018-02-13 | 中国科学院微电子研究所 | Method and device for processing wafer by laser |
| CN107685196B (en) * | 2017-07-14 | 2018-09-14 | 中国科学院微电子研究所 | Method and device for processing wafer by laser |
| CN112171504A (en) * | 2020-09-30 | 2021-01-05 | 李善龙 | Wafer etching back grinding machine |
| CN112171504B (en) * | 2020-09-30 | 2021-08-10 | 车艾建 | Wafer etching back grinding machine |
| CN112872610A (en) * | 2021-01-28 | 2021-06-01 | 常州大学 | Method and device for manufacturing trench MOSFET (Metal-oxide-semiconductor field Effect transistor) based on laser |
| CN113066721A (en) * | 2021-03-18 | 2021-07-02 | 扬州虹扬科技发展有限公司 | Manufacturing method of wafer for vehicle |
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