CN103021835A - Method for forming inclined sidewall by dry etching of GaN-based material - Google Patents
Method for forming inclined sidewall by dry etching of GaN-based material Download PDFInfo
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- CN103021835A CN103021835A CN2012104926363A CN201210492636A CN103021835A CN 103021835 A CN103021835 A CN 103021835A CN 2012104926363 A CN2012104926363 A CN 2012104926363A CN 201210492636 A CN201210492636 A CN 201210492636A CN 103021835 A CN103021835 A CN 103021835A
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- dry etching
- etching
- sloped sidewall
- sidewall
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000001312 dry etching Methods 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 title abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000003292 glue Substances 0.000 claims abstract description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 230000000873 masking effect Effects 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 15
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract 2
- 238000001035 drying Methods 0.000 abstract 2
- 238000007664 blowing Methods 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
The invention provides a method for forming an inclined sidewall by dry etching of a GaN-based material, and belongs to the technical field of semiconductors. The method comprises the following steps of in sequence: cleaning an etched GaN-based sample; drying; removing the steam on the surface; manufacturing a shielding layer with thickness of 1 to 100 microns on the surface of the GaN-based sample by utilizing photoresist which can form a thick film, wherein the shielding layer has mobility and can gradually expand during dry etching in order to enable a shielding area to outwards expand; carrying out dry etching on the GaN-based sample to form the inclined sidewall; transferring the etched GaN-based sample into glue removing liquid to remove the residual shielding layer; sequentially ultrasonically cleaning by acetone and absolute ethyl alcohol; rinsing by deionized water; and drying by nitrogen in a blowing way. The method for forming the inclined sidewall by dry etching of the GaN-based material has the advantages of being simple in process and high in controllability and repeatability.
Description
Technical field
The present invention relates to the method that a kind of dry etching GaN sill forms sloped sidewall, belong to technical field of semiconductors.
Background technology
III group-III nitride take the GaN material as representative has direct band gap, and physics, stable chemical nature are the photoelectron material systems of at present tool application prospect.By forming Al
xGa
1-xN, In
yGa
1-yN, Al
xIn
yGa
1-x-yThe multi-element compounds such as N, its energy gap can change continuously from 0.7eV to 6.2eV, wave-length coverage covers infrared-visible-ultraviolet band.Solid-state illumination light source of new generation take GaN base LED as representative is because its energy-saving and environmental protection, the life-span is long, volume is little, anti-mechanical oscillation ability is strong, spectral purity is good etc., and advantage is applied to traffic lights, LCD backlight, street lamp, automobile lamp, room lighting etc. gradually.
In GaN base LED device, because there are larger difference in the refractive index of GaN and the refractive index of air, the cirtical angle of total reflection only has 23 degree, and this is so that the light extraction efficiency is very low.Theoretical calculating and experiment show that all GaN base LED forms sloped sidewall and can improve the light extraction efficiency.In addition, the high-voltage LED that develops rapidly in recent years (High Voltage LED, HV-LED) and AC LED (Alternating Current LED, form the sloped sidewall of suitable angle when AC-LED) also requiring the etching deep trench, can effectively isolate, also can adapt to metal electrode interconnection covering between the luminous subarea.Therefore, in GaN base LED device, the control at sidewall inclination angle is very important.
At present, developed following several method and formed sloped sidewall, but these methods are not limited to the GaN base material system.(1) adopts the method for inclined cut, cut out the sidewall [United States Patent, No.5087949, (1992)] of inclination.M. the people such as R. Krames adopts the method to make truncation reverse pyramid AlGaInP/GaP LED [Appl. Phys. Lett., Vol.75, No.16,2365-2367, (1999)].When (2) adopting ICP etching GaN sill, by the etching condition of control ICP, such as parameters such as reaction chamber pressure, process gas flows, form sloped sidewall [Wang Wei, Cai Yong, Zhang Baoshun, Huang Wei, Li Haiou, solid electronics research and progress, Vol.32, No.3,219-224, (2012)].(3) form sloped sidewall at the photoresist mask first, by dry etching sloped sidewall is transferred to the material that is etched again.The people such as Tang Longjuan adopt the method to prepare to have the silicon dioxide structure [Chinese invention patent, 200910081983.5] of sloped sidewall.(4) wet etching GaN sill according to the difference of different crystal plane direction corrosion rates, can erode away the sidewall with specific inclination angle.Yet because physics, the stable chemical nature of GaN sill, resistance to corrosion is strong, and the method only has a small amount of experiment report.
Summary of the invention
The present invention seeks to propose the method that a kind of dry etching forms sloped sidewall for physics and chemistry stable in properties, GaN sill that resistance to corrosion is strong.
The present invention includes following steps:
1) the GaN basic pattern sheet that is etched is cleaned, dries, remove surperficial steam;
2) photoetching: employing can form the photoresist of thick film, and through comprising even glue, soft baking, exposure, development and post bake processing step, making thickness on GaN basic pattern sheet surface is 1
～100
, in the dry etching process, can expand gradually, make the mobile masking layer that has that masking regional extends out;
3) GaN basic pattern sheet is carried out dry etching, form sloped sidewall;
4) the GaN basic pattern sheet after the etching is put into the liquid that removes photoresist and removed residual masking layer, adopt successively acetone, absolute ethyl alcohol to carry out ultrasonic cleaning again, use at last rinsed with deionized water, nitrogen dries up.
Be different from art methods, characteristics of the present invention are: the key that forms sloped sidewall is that the photoresist that can form thick film in the surperficial employing of GaN basic pattern sheet is that thick glue is as masking layer, this masking layer has certain flowability, in the dry etching process, the masking layer figure self expands gradually, and form masking regional and extend out, thereby along with the increase of etching depth, self-assembling formation sloped sidewall in the material that is etched, its cross section are trapezoidal or triangle.
Method provided by the invention has advantages of that technique is simple, controllability strong, repeatability is high.Be mainly reflected in following two aspects: on the one hand, do not need the masking layer figure is carried out complicated control, namely do not need to make masking layer figure self to form sloped sidewall; On the other hand, only need to regulate the preparation technology parameter of masking layer, can in the GaN sill, obtain to have the sidewall of differing tilt angles.
Above-mentioned steps 2) in, the common processes of photoetching need experience the steps such as even glue, soft baking, exposure, development, post bake.The post bake process a little less than, then photoresist has preferably mobilely, can form the sidewall than small inclination in follow-up dry etching, namely sidewall is mild.The post bake process is stronger, and then the mobile variation of photoresist then forms the sidewall than high inclination-angle in follow-up dry etching, and namely sidewall is steeper.
GaN sill of the present invention is GaN, Al
xGa
1-xN, In
yGa
1-yN, Al
xIn
yGa
1-x-yAmong N, AlN or the InN any one; Wherein, 0≤x≤1,0≤y≤1,0≤x+y≤1.
Dry etching of the present invention can be inductively coupled plasma etching (Inductive Coupled Plasma Etching, ICP Etching), also can be reactive ion etching (Reactive Ion Etching, RIE), or be reaction ion deep etching (Deep Reactive Ion Etching, DRIE).
The angle of sidewall and horizontal plane is 30 in the described sloped sidewall that the present invention forms
o～80
o, the sidewall vertical height is 1
～10
Description of drawings
Fig. 1 is process chart provided by the invention.
Fig. 2 is the generalized section of the GaN sill with sloped sidewall for preparing of the present invention.
Embodiment
Embodiment 1
Step 1: the GaN basic pattern sheet that is etched is cleaned, dries, remove surperficial steam, such as (a) among Fig. 1.
Step 2: photoetching: adopt the thick glue AZ P4620 of peace intelligence Electron Material Co., Ltd production as the required masking layer of dry etching, successively the processing steps such as the even glue of experience, soft baking, exposure, development, post bake.Experiment parameter is as follows in detail: even glue rotating speed is 2000RPM, and soft baking is 110 ℃, 10 minutes, and the time for exposure is 8 seconds, and light intensity is 25mW/cm
2, developing solution is that 1:3 dilutes for the AZ 400K(of dilution according to the volume ratio of developer solution and water), the post bake condition is 110 ℃, 40 minutes.The thickness of step instrument measurement photoresist is 10 μ m approximately.Such as (b) among Fig. 1.
Step 3: adopt the inductively coupled plasma dry etching, form sloped sidewall.Such as (c) among Fig. 1.
Step 4: after etching is finished, print is put into the liquid that removes photoresist remove residual masking layer, adopt successively acetone, absolute ethyl alcohol to carry out ultrasonic cleaning again, use at last a large amount of rinsed with deionized water, nitrogen dries up.Such as (d) among Fig. 1.
Embodiment 2
Step 1: the GaN basic pattern sheet that is etched is cleaned, dries, remove surperficial steam.Such as (a) among Fig. 1
Step 2: photoetching: adopt thick glue AZ P4620 as the required masking layer of dry etching, adopt the method for twice even glue, to obtain thicker masking layer.Experiment parameter is as follows in detail: for the first time even glue rotating speed is 2000RPM, and for the first time soft baking is 110 ℃, 5 minutes, and for the second time even glue rotating speed is 1500RPM, and for the second time soft baking is 110 ℃, 10 minutes, and the time for exposure is 12 seconds, and light intensity is 25mW/cm
2, developing solution is that 1:3 dilutes for the AZ 400K(of dilution according to the volume ratio of developer solution and water), the post bake condition is 120 ℃, 20 minutes.The thickness of step instrument measurement photoresist is 22 μ m approximately.Such as (b) among Fig. 1.
Step 3: adopt the inductively coupled plasma dry etching, form sloped sidewall.Such as (c) among Fig. 1.
Step 4: after etching is finished, print is put into the liquid that removes photoresist remove residual masking layer, adopt successively acetone, absolute ethyl alcohol to carry out ultrasonic cleaning again, use at last a large amount of rinsed with deionized water, nitrogen dries up.Such as (d) among Fig. 1.
Above-mentioned GaN sill can be GaN, Al
xGa
1-xN, In
yGa
1-yN, Al
xIn
yGa
1-x-yAmong N, AlN or the InN any one; Wherein, 0≤x≤1,0≤y≤1,0≤x+y≤1.
Dry etching can adopt the inductively coupled plasma etching, or reactive ion etching, or in the reaction ion deep etching any one.
In the present invention, there are two aspects to take into full account during implementation.On the one hand, owing to deliberately making photoresist have certain flowability, the post bake process has weakened.Therefore, the corrosion stability of photoresist masking layer has also played " shunting action " because of the photoresist that slides to sidewall and has reduced.On the other hand, the actual size of figure is not the design size of simple copy reticle figure yet, but variation occurred.
As shown in Figure 2, the graphic element width of reticle is L, and spacing is W, and etches in the GaN sill of sloped sidewall, and cell width is increased to L+2 L, and spacing is reduced to W-2 L.
By the photoresist process parameter of control as masking layer, mainly refer to soft baking and post bake process temperature and time, the present invention can obtain sloped sidewall in the GaN sill that is etched inclination angle theta excursion is 30 ° to 80 °.
Claims (4)
1. a dry etching GaN sill forms the method for sloped sidewall, it is characterized in that may further comprise the steps:
1) the GaN basic pattern sheet that is etched is cleaned, dries, remove surperficial steam;
2) photoetching: employing can form the photoresist of thick film, through comprising even glue, soft baking, exposure, development and post bake processing step, make thickness on GaN basic pattern sheet surface and be 1 μ m～100 μ m, in the dry etching process, can expand gradually, the masking layer with flowability that masking regional is extended out;
3) GaN basic pattern sheet is carried out dry etching, form sloped sidewall;
4) the GaN basic pattern sheet after the etching is put into the liquid that removes photoresist and removed residual masking layer, adopt successively acetone, absolute ethyl alcohol to carry out ultrasonic cleaning again, use at last rinsed with deionized water, nitrogen dries up.
2. described dry etching GaN sill forms the method for sloped sidewall according to claim 1, it is characterized in that described GaN sill is GaN, Al
xGa
1-xN, In
yGa
1-yN, Al
xIn
yGa
1-x-yAmong N, AlN or the InN any one; Wherein, 0≤x≤1,0≤y≤1,0≤x+y≤1.
3. described dry etching GaN sill forms the method for sloped sidewall according to claim 1, it is characterized in that described dry etching is the inductively coupled plasma etching, or reactive ion etching, or reaction ion deep etching.
4. described dry etching GaN sill forms the method for sloped sidewall according to claim 1, it is characterized in that the angle of sidewall and horizontal plane is 30 in the described sloped sidewall
o～80
o, the sidewall vertical height is 1 μ m～10 μ m.
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|---|---|---|---|
| CN2012104926363A CN103021835A (en) | 2012-11-28 | 2012-11-28 | Method for forming inclined sidewall by dry etching of GaN-based material |
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|---|---|---|---|
| CN2012104926363A CN103021835A (en) | 2012-11-28 | 2012-11-28 | Method for forming inclined sidewall by dry etching of GaN-based material |
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| CN103021835A true CN103021835A (en) | 2013-04-03 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112424913A (en) * | 2018-10-26 | 2021-02-26 | 玛特森技术公司 | Water vapor based fluorine containing plasma for hardmask removal |
| CN115440576A (en) * | 2022-09-30 | 2022-12-06 | 中国科学院光电技术研究所 | Method for rework and cleaning of photolithographic structure on substrate |
| CN116520464A (en) * | 2023-04-18 | 2023-08-01 | 矽万(上海)半导体科技有限公司 | Method for preparing fly-eye lens |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101863447A (en) * | 2009-04-15 | 2010-10-20 | 中国科学院半导体研究所 | Method for making inclined sidewall silicon dioxide structure by photolithography and dry etching |
| CN102347214A (en) * | 2011-07-06 | 2012-02-08 | 德泓(福建)光电科技有限公司 | Preparation method for graphical template used for growing thick-film GaN material |
-
2012
- 2012-11-28 CN CN2012104926363A patent/CN103021835A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101863447A (en) * | 2009-04-15 | 2010-10-20 | 中国科学院半导体研究所 | Method for making inclined sidewall silicon dioxide structure by photolithography and dry etching |
| CN102347214A (en) * | 2011-07-06 | 2012-02-08 | 德泓(福建)光电科技有限公司 | Preparation method for graphical template used for growing thick-film GaN material |
Non-Patent Citations (1)
| Title |
|---|
| 郭雄伟等: "基于ICP刻蚀GaN选择比的研究", 《现代显示》, no. 130, 5 November 2011 (2011-11-05), pages 14 - 15 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112424913A (en) * | 2018-10-26 | 2021-02-26 | 玛特森技术公司 | Water vapor based fluorine containing plasma for hardmask removal |
| CN115440576A (en) * | 2022-09-30 | 2022-12-06 | 中国科学院光电技术研究所 | Method for rework and cleaning of photolithographic structure on substrate |
| CN116520464A (en) * | 2023-04-18 | 2023-08-01 | 矽万(上海)半导体科技有限公司 | Method for preparing fly-eye lens |
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Application publication date: 20130403 |