CN101231983A - Thin film chip-on-package substrate - Google Patents
Thin film chip-on-package substrate Download PDFInfo
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- CN101231983A CN101231983A CN 200710000294 CN200710000294A CN101231983A CN 101231983 A CN101231983 A CN 101231983A CN 200710000294 CN200710000294 CN 200710000294 CN 200710000294 A CN200710000294 A CN 200710000294A CN 101231983 A CN101231983 A CN 101231983A
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- 239000000758 substrate Substances 0.000 title claims abstract description 55
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000004806 packaging method and process Methods 0.000 claims description 22
- 229910000679 solder Inorganic materials 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 3
- 239000008393 encapsulating agent Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Wire Bonding (AREA)
Abstract
一种薄膜覆晶封装基板,主要包括一可挠性介电层、多数个引脚以及至少一对位标记。这些引脚设置于该可挠性介电层上,其中引脚的内端延伸至该可挠性介电层的一晶片覆盖区内。而该对位标记设置于该可挠性介电层上且位于该晶片覆盖区内。藉此避免占用该基板的引脚设置区域并解决在对位时对位标记可能被夹具遮蔽的问题。
A thin film chip package substrate mainly includes a flexible dielectric layer, a plurality of pins and at least one alignment mark. The pins are arranged on the flexible dielectric layer, wherein the inner ends of the pins extend into a chip coverage area of the flexible dielectric layer. The alignment mark is arranged on the flexible dielectric layer and is located in the chip coverage area. This avoids occupying the pin setting area of the substrate and solves the problem that the alignment mark may be shielded by a fixture during alignment.
Description
技术领域 technical field
本发明涉及一种薄膜覆晶封装基板(COF substrate),特别是涉及一种有助于晶片接合对位的薄膜覆晶封装基板。The invention relates to a chip-on-film packaging substrate (COF substrate), in particular to a chip-on-film packaging substrate that facilitates chip bonding and alignment.
背景技术 Background technique
在目前的薄膜覆晶封装构造中,晶片的凸块与薄膜基板的引脚两者的间隔必须对应相同且越来越小,甚至可到30微米以内,故可容许的对位误差也越来越严格。因此,晶片接合的对位技术需有所提升,否则会有桥接短路与讯号连接失败的问题。然而,随着薄膜基板的引脚间隔越小,即引脚数量增加,基板上可供引脚配置区域要求越大,相对使得对位标记的设置位置受到局限。In the current chip-on-film packaging structure, the distance between the bumps of the chip and the pins of the film substrate must be the same and smaller and smaller, even within 30 microns, so the allowable alignment error is getting smaller and smaller. more stringent. Therefore, the alignment technology of chip bonding needs to be improved, otherwise there will be problems of bridging short circuit and signal connection failure. However, as the pitch of the pins of the thin film substrate becomes smaller, that is, the number of pins increases, the requirement for an area available for pin configuration on the substrate is greater, which relatively limits the setting position of the alignment mark.
如图1所示,一种现有的薄膜覆晶封装基板100主要包括一可挠性介电层110、多数个引脚120以及至少一对位标记130。该可挠性介电层110具有一晶片覆盖区111,以供一晶片11的设置(如图2所示)。该些引脚120设置在该可挠性介电层110上。该对位标记130设置在该可挠性介电层110上。该基板100另包括有一防焊层140,其形成于该可挠性介电层110上,并局部覆盖该些引脚120。该防焊层140的一开孔141略大于该晶片覆盖区111,以显露该些引脚120的内端121,以供一晶片11的多数个凸块13接合。已知,该对位标记130位于该防焊层140的该开孔141之外或是设在该防焊层140的该开孔141与晶片覆盖区111之间的狭小区域。当引脚配置的密度提高时,会影响该基板100的引脚设置区域,并且在晶片接合前的基板对位时,该对位标记130可能会有被夹具遮蔽的问题。As shown in FIG. 1 , a conventional thin film chip-on-
由此可见,上述现有的薄膜覆晶封装基板在结构与使用上,显然仍存在有不便与缺陷,而亟待加以进一步改进。为了解决上述存在的问题,相关厂商莫不费尽心思来谋求解决之道,但长久以来一直未见适用的设计被发展完成,而一般产品又没有适切的结构能够解决上述问题,此显然是相关业者急欲解决的问题。因此如何能创设一种新型结构的薄膜覆晶封装基板,便成为当前业界极需改进的目标。It can be seen that the structure and use of the existing thin film chip-on-chip packaging substrate obviously still have inconveniences and defects, and further improvement is urgently needed. In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but for a long time no suitable design has been developed, and the general products have no suitable structure to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve. Therefore, how to create a thin film chip-on-chip packaging substrate with a new structure has become a goal that needs to be improved in the current industry.
有鉴于上述现有的薄膜覆晶封装基板存在的缺陷,本发明人基于从事此类产品设计制造多年丰富的实务经验及专业知识,并配合学理的运用,积极加以研究创新,以期创设一种新型结构的薄膜覆晶封装基板,能够改进一般现有的薄膜覆晶封装基板,使其更具有实用性。经过不断的研究、设计,并经过反复试作样品及改进后,终于创设出确具实用价值的本发明。In view of the defects of the above-mentioned existing film-on-chip packaging substrates, the inventors actively researched and innovated based on years of rich practical experience and professional knowledge engaged in the design and manufacture of such products, and combined with the application of academic theories, in order to create a new The film-on-chip package substrate with the structure can improve the general existing film-on-chip package substrate and make it more practical. Through continuous research, design, and after repeated trial samples and improvements, the present invention with practical value is finally created.
发明内容 Contents of the invention
本发明的主要目的在于提供一种薄膜覆晶封装基板,改变对位标记的配置位置,以避免占用引脚设置区域并解决在对位时对位标记可能被夹具遮蔽的问题。The main purpose of the present invention is to provide a thin film chip-on-chip packaging substrate, which changes the position of the alignment mark to avoid occupying the pin setting area and solves the problem that the alignment mark may be covered by the jig during alignment.
本发明的次一目的在于提供一种薄膜覆晶封装基板,用以增进对位标记的固定力。Another object of the present invention is to provide a chip-on-film packaging substrate for improving the fixing force of the alignment mark.
本发明的目的及解决其技术问题主要是采用以下技术方案来实现的。依据本发明揭示一种薄膜覆晶封装基板包括一可挠性介电层、多数个引脚以及至少一对位标记。该可挠性介电层具有一晶片覆盖区(chip footprintarea)。该些引脚设置于该可挠性介电层上,其中该些引脚的内端更延伸至该晶片覆盖区内。该对位标记设置于该可挠性介电层上且位于该晶片覆盖区内。另揭示使用该基板的一薄膜覆晶封装构造。The purpose of the present invention and the solution to its technical problems are mainly achieved by adopting the following technical solutions. According to the present invention, a chip-on-film package substrate includes a flexible dielectric layer, a plurality of pins and at least one pair of alignment marks. The flexible dielectric layer has a chip footprint area. The pins are disposed on the flexible dielectric layer, and the inner ends of the pins further extend into the chip footprint. The alignment mark is disposed on the flexible dielectric layer and located in the wafer coverage area. A chip-on-film packaging structure using the substrate is also disclosed.
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。The purpose of the present invention and its technical problems can also be further realized by adopting the following technical measures.
在前述的薄膜覆晶封装基板中,该对位标记可直接贴附于该可挠性介电层。In the foregoing thin film chip-on-chip package substrate, the alignment mark can be directly attached to the flexible dielectric layer.
在前述的薄膜覆晶封装基板中,该对位标记与该些引脚可为相同的金属材质。In the foregoing thin film chip-on-chip package substrate, the alignment mark and the leads may be made of the same metal material.
在前述的薄膜覆晶封装基板中,该对位标记的形状可选自于十字形、方形、T字形与L形的其中之一。In the foregoing chip-on-chip packaging substrate, the shape of the alignment mark can be selected from one of cross, square, T-shape and L-shape.
在前述的薄膜覆晶封装基板中,可另包括有一防焊层,其形成于该可挠性介电层上并局部覆盖该些引脚,该防焊层具有一开孔,其对应于该晶片覆盖区。In the aforementioned film-on-chip packaging substrate, a solder resist layer may be further included, which is formed on the flexible dielectric layer and partially covers the leads, and the solder resist layer has an opening corresponding to the Chip footprint.
在前述的薄膜覆晶封装基板中,该对位标记延伸有一虚置引脚,其一端延伸至该防焊层的该开孔之外而被该防焊层所覆盖。In the aforementioned thin film chip-on-chip package substrate, the alignment mark extends a dummy pin, one end of which extends beyond the opening of the solder resist layer and is covered by the solder resist layer.
借由上述技术方案,本发明薄膜覆晶封装基板至少具有下列优点:With the above technical solutions, the thin film chip-on-chip package substrate of the present invention has at least the following advantages:
1、改变对位标记的配置位置,避免了占用引脚设置区域并解决在对位时对位标记可能被夹具遮蔽的问题。1. Change the configuration position of the alignment mark to avoid occupying the pin setting area and solve the problem that the alignment mark may be covered by the fixture during alignment.
2、增进了对位标记的固定力。2. Improve the fixing force of the alignment mark.
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。The above description is only an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention, it can be implemented according to the contents of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable , the following preferred embodiments are specifically cited below, and are described in detail as follows in conjunction with the accompanying drawings.
附图说明 Description of drawings
图1:现有的薄膜覆晶封装基板的俯视示意图。Figure 1: A schematic top view of an existing thin film chip-on-chip packaging substrate.
图2:现有的使用该基板的一薄膜覆晶封装构造的局部截面示意图。FIG. 2 : a schematic partial cross-sectional view of a conventional thin film chip-on-chip packaging structure using the substrate.
图3:依据本发明的第一具体实施例,一种薄膜覆晶封装基板的俯视示意图。FIG. 3 is a schematic top view of a chip-on-film package substrate according to the first embodiment of the present invention.
图4:依据本发明的第一具体实施例,使用该基板的一薄膜覆晶封装构造的局部截面示意图。FIG. 4 is a schematic partial cross-sectional view of a chip-on-film packaging structure using the substrate according to the first embodiment of the present invention.
图5A与图5B:依据本发明的第一具体实施例,绘示该薄膜覆晶封装基板内对位标记的形状可等效性变化的示意图。5A and 5B : according to the first embodiment of the present invention, schematic diagrams illustrating that the shape of the alignment mark in the thin film chip-on-chip packaging substrate can be changed equivalently.
图6:依据本发明的第二具体实施例,另一种薄膜覆晶封装基板的俯视示意图。FIG. 6 is a schematic top view of another chip-on-film package substrate according to the second embodiment of the present invention.
图7:依据本发明的第二具体实施例,使用该基板的一薄膜覆晶封装构造的局部截面示意图。FIG. 7 is a schematic partial cross-sectional view of a chip-on-film packaging structure using the substrate according to the second embodiment of the present invention.
11:晶片 12:封胶体 13:凸块11: Wafer 12: Encapsulant 13: Bump
21:晶片 22:封胶体 23:凸块21: Wafer 22: Encapsulant 23: Bump
31:晶片 32:封胶体 33:凸块31: Wafer 32: Encapsulant 33: Bump
100:薄膜覆晶封装基板100: Thin film chip-on-chip package substrate
110:可挠性介电层 111:晶片覆盖区110: Flexible dielectric layer 111: Die footprint
120:引脚 121:内端120: pin 121: inner end
130:对位标记 140:防焊层 141:开孔130: Alignment mark 140: Solder mask 141: Hole opening
200:薄膜覆晶封装基板200: Thin film chip-on-chip package substrate
210:可挠性介电层 211:晶片覆盖区210: Flexible dielectric layer 211: Die footprint
220:引脚 221:内端220: pin 221: inner end
230:对位标记 230A:对位标记 230B:对位标记230:
240:防焊层 241:开孔240: Solder mask 241: Opening
300:薄膜覆晶封装基板300: Thin film chip-on-chip package substrate
310:可挠性介电层 311:晶片覆盖区310: Flexible dielectric layer 311: Die footprint
320:引脚 321:内端320: pin 321: inner end
330:对位标记 331:虚置引脚330: Alignment mark 331: Dummy pin
340:防焊层 341:开孔340: Solder mask 341: Opening
具体实施方式 Detailed ways
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例,对依据本发明提出的薄膜覆晶封装基板其具体实施方式、结构、特征及其功效,详细说明如后。In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, characteristics and features of the thin film chip-on-chip packaging substrate proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. Efficacy, detailed as follows.
在本发明的第一具体实施例中,揭示一种薄膜覆晶封装基板,如图3所示并可配合参阅图4,该薄膜覆晶封装基板200包括一可挠性介电层210、多数个引脚220以及至少一对位标记230。该可挠性介电层210具有一晶片覆盖区211。其中,该晶片覆盖区211的尺寸实质对应于一晶片21的尺寸(如图4所示)。通常该可挠性介电层210为聚亚酰胺层(PI),而具有良好可挠曲性。In the first specific embodiment of the present invention, a chip-on-film packaging substrate is disclosed, as shown in FIG. 3 and can be referred to FIG.
该些引脚220设置于该可挠性介电层210上,其中该些引脚220的内端221更延伸至该晶片覆盖区211内,而呈显露状。通常该些引脚220的材质为铜,该些引脚220的内端221与外端为显露状并电镀有一焊接层(图未绘出),如锡层。The
该对位标记230设置于该可挠性介电层210上且位于该晶片覆盖区211内,例如可位于该晶片覆盖区211的角隅。一般而言,该对位标记230与该些引脚220可为相同的金属材质,以与该些引脚220为同层结构,以利制造并能精准作为该些引脚220的对位基准点。该对位标记230可直接贴附于该可挠性介电层210。通常该对位标记230只需要有一个或一个以上约90°的弯角形状即可,例如其形状可选自于十字形、方形、T字形与L形的其中之一。在本实施例中,该对位标记230为十字形。The
该基板200可另包括有一防焊层240,其形成于该可挠性介电层210上并局部覆盖该些引脚220。该防焊层240具有一开孔241,概呈矩形,其对应于该晶片覆盖区211,以显露该些引脚220的内端221与该对位标记230。通常该防焊层240的开孔241稍大于该晶片覆盖区211。The
如图4所示,使用前述的基板200可以制成一薄膜覆晶封装构造,主要包括该基板200、一晶片21与一封胶体22,该晶片21设置于该基板200上,该晶片21具有多数个凸块23。依据该对位标记230的参考座标,可将该些凸块23准确接合至该些引脚的内端221。再利用点涂形成的封胶体22密封该些凸块23。此外,该对位标记230不会占用该基板200的引脚设置区域并解决在对位时现有的对位标记可能被夹具遮蔽的问题。As shown in FIG. 4, a thin film chip-on-chip package structure can be made by using the
如图5A与图5B所示,上述在晶片覆盖区211的对位标记230能以不同形状的对位标记230A与230B替换之。例如第5A图的对位标记230A为方形,第5B图的对位标记230B为T形。As shown in FIGS. 5A and 5B , the alignment marks 230 in the
依据本发明的第二具体实施例,揭示另一薄膜覆晶封装基板。如图6所示并配合参阅图7,该薄膜覆晶封装基板300包括一可挠性介电层310、多数个引脚320以及至少一对位标记330。该可挠性介电层310具有一晶片覆盖区311,其指预定被晶片占用的区域。According to the second embodiment of the present invention, another thin film chip-on-chip packaging substrate is disclosed. As shown in FIG. 6 and with reference to FIG. 7 , the thin film chip-on-
如第6及7图所示,该些引脚320设置于该可挠性介电层310上,其中该些引脚320的内端321更延伸至该晶片覆盖区311内。As shown in FIGS. 6 and 7 , the pins 320 are disposed on the
如第6及7图所示,该对位标记330设置于该可挠性介电层310上且位于该晶片覆盖区311内。藉由该对位标记330的设置位置,避免占用该基板300的引脚设置区域并解决在对位时现有的对位标记可能被夹具遮蔽的问题。在本实施例中,该对位标记330为L形。As shown in FIGS. 6 and 7 , the
此外,该基板300可另包括有一防焊层340,其形成于该可挠性介电层310上并局部覆盖该些引脚320,该防焊层340具有一开孔341,其对应于该晶片覆盖区311,以显露该些引脚320的内端321。In addition, the
较佳地,该对位标记330延伸有一虚置引脚331,其一端延伸至该防焊层340的该开孔341之外而被该防焊层340所覆盖,故能增进该对位标记330于该可挠性介电层310上的固定力,以避免不当偏移或松脱。Preferably, the
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, can use the technical content disclosed above to make some changes or modify equivalent embodiments with equivalent changes, but all the content that does not depart from the technical solution of the present invention, according to the present invention Any simple modifications, equivalent changes and modifications made to the above embodiments by the technical essence still belong to the scope of the technical solutions of the present invention.
Claims (6)
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102984890A (en) * | 2012-10-22 | 2013-03-20 | 广东欧珀移动通信有限公司 | Positioning structure and positioning method for component placement |
CN105206599A (en) * | 2014-06-09 | 2015-12-30 | 颀邦科技股份有限公司 | Flexible substrate |
TWI726441B (en) * | 2019-10-08 | 2021-05-01 | 南茂科技股份有限公司 | Flexible circuit substrate and chip-on-film package structure |
Family Cites Families (2)
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JP3999945B2 (en) * | 2001-05-18 | 2007-10-31 | 株式会社東芝 | Manufacturing method of semiconductor device |
US6668449B2 (en) * | 2001-06-25 | 2003-12-30 | Micron Technology, Inc. | Method of making a semiconductor device having an opening in a solder mask |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102984890A (en) * | 2012-10-22 | 2013-03-20 | 广东欧珀移动通信有限公司 | Positioning structure and positioning method for component placement |
CN102984890B (en) * | 2012-10-22 | 2015-08-19 | 广东欧珀移动通信有限公司 | A kind of component mounter location structure and localization method |
CN105206599A (en) * | 2014-06-09 | 2015-12-30 | 颀邦科技股份有限公司 | Flexible substrate |
CN105206599B (en) * | 2014-06-09 | 2018-10-19 | 颀邦科技股份有限公司 | Flexible substrate |
TWI726441B (en) * | 2019-10-08 | 2021-05-01 | 南茂科技股份有限公司 | Flexible circuit substrate and chip-on-film package structure |
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