CN101197332A - How to make pixel structure - Google Patents

Abstract

The invention relates to a manufacturing method of a pixel structure, which comprises the following steps: first, a substrate with a first conductive layer is provided, a first mask is provided over the first conductive layer, and the first conductive layer is irradiated with laser through the first mask to form a gate. Then, a gate insulating layer is formed on the substrate to cover the gate. And simultaneously forming a channel layer, a source electrode and a drain electrode on the gate insulating layer above the gate electrode, wherein the gate electrode, the channel layer, the source electrode and the drain electrode form the thin film transistor. Then, a patterned passivation layer is formed on the thin film transistor, and the patterned passivation layer exposes a portion of the drain electrode. And then, forming a pixel electrode electrically connected with the drain electrode. The invention utilizes the laser stripping mode to manufacture the grid, and the channel layer, the source electrode and the drain electrode are simultaneously manufactured, thereby simplifying the process steps and reducing the manufacturing cost of the photomask compared with the known manufacturing method of the pixel structure.

Description

How to make pixel structure

technical field

The present invention relates to a method for manufacturing a pixel structure, and in particular to a method for manufacturing a pixel structure using a laser ablation process (laser ablation process) to make a protective layer.

Background technique

A display is a communication interface between people and information, and flat-panel displays are currently the main development trend. There are mainly the following types of flat panel displays: organic electroluminescence display, plasma display panel, and thin film transistor liquid crystal display. Among them, thin film transistor liquid crystal display is the most widely used. Generally speaking, a thin film transistor liquid crystal display is mainly composed of a thin film transistor array substrate, a color filter array substrate and a liquid crystal layer. Wherein, the thin film transistor array substrate includes a plurality of scan lines (scan lines), a plurality of data lines (data lines) and a plurality of pixel structures (pixel units) arranged in an array, and each pixel structure is respectively connected to the corresponding scan lines and data lines. electrical connection.

1A to 1G are flowcharts of manufacturing a known pixel structure. First, please refer to FIG. 1A , a substrate 10 is provided, and a gate 20 is formed on the substrate 10 through a first photomask process. Next, referring to FIG. 1B , a gate insulating layer 30 is formed on the substrate 10 to cover the gate 20 . Then, referring to FIG. 1C , a channel layer 40 above the gate 20 is formed on the gate insulating layer 30 through a second photomask process. Generally, the material of the channel layer 40 is amorphous silicon. Afterwards, referring to FIG. 1D , a source 50 and a drain 60 are formed on a part of the channel layer 40 and a part of the gate insulating layer 30 through a third photomask process. It can be seen from FIG. 1D that the source electrode 50 and the drain electrode 60 respectively extend from two sides of the channel layer 40 to the gate insulating layer 30 and expose a part of the channel layer 40 . Next, referring to FIG. 1E , a protection layer 70 is formed on the substrate 10 to cover the gate insulating layer 30 , the channel layer 40 , the source 50 and the drain 60 . Then, referring to FIG. 1F , the passivation layer 70 is patterned through a fourth photomask process to form a contact hole H in the passivation layer 70 . It can be seen from FIG. 1F that the contact hole H in the passivation layer 70 will expose a part of the drain 60 . Afterwards, referring to FIG. 1G , the pixel electrode 80 is formed on the passivation layer 70 through the fifth photomask process. As can be seen from FIG. 1G , the pixel electrode 80 is electrically connected to the drain electrode 60 through the contact hole H. After the pixel electrode 80 is fabricated, the pixel structure 90 is fabricated.

Based on the above, the known pixel structure 90 is mainly fabricated through five photomask processes. In other words, the pixel structure 90 needs to be fabricated using five photomasks with different patterns. Since photomasks are very expensive, and each photomask process needs to use a photomask with different patterns, if the number of photomask processes cannot be reduced, the manufacturing cost of the pixel structure 90 will not be reduced.

In addition, as the size of thin film transistor liquid crystal display panels increases, the size of the photomask used to make the thin film transistor array substrate will also increase accordingly, and the large size photomask will be more expensive in cost, making the pixel structure The manufacturing cost of 90 cannot be effectively reduced.

Contents of the invention

The invention relates to a manufacturing method of a pixel structure, which is suitable for reducing the manufacturing cost.

In order to specifically describe the content of the present invention, a method for manufacturing a pixel structure is proposed here, which firstly provides a substrate, and forms a first conductive layer on the substrate, then provides a first mask on the first conductive layer, and the first The mask exposes part of the first conductive layer. A laser is used to irradiate the first conductive layer through the first mask to remove a part of the first conductive layer exposed by the first mask to form a gate. After that, a gate insulating layer is formed on the substrate to cover the gate. Then, simultaneously form a channel layer, a source electrode and a drain electrode on the gate insulating layer above the gate, wherein the source electrode and the drain electrode are configured in a part of the channel layer, and the gate electrode, the channel layer, the source electrode and the The drain constitutes a thin film transistor. Then, a patterned protective layer is formed on the thin film transistor, and the patterned protective layer exposes a part of the drain. Next, a pixel electrode electrically connected to the drain is formed.

In the manufacturing method of the pixel structure of the present invention, the method of simultaneously forming the channel layer, the source electrode and the drain electrode is, for example, firstly forming a semiconductor layer on the gate insulating layer, and then forming a second conductive layer on the semiconductor layer. Then, a photoresist layer is formed on the second conductive layer above the grid, wherein the photoresist layer can be divided into a first photoresist block and a second block located on both sides of the first block. Two photoresist blocks, and the thickness of the first photoresist block is smaller than the thickness of the second photoresist block. Next, a first etching process is performed on the second conductive layer and the semiconductor layer by using the photoresist layer as a mask. Then, the thickness of the photoresist layer is reduced until the first photoresist block is completely removed. Finally, a second etching process is performed on the second conductive layer by using the remaining second photoresist block as a mask, so that the remaining second conductive layer forms the source and drain electrodes, and the remaining semiconductor layer forms the trench road layer. In other embodiments, the manufacturing method of the channel layer, the source electrode and the drain electrode further includes forming an ohmic contact layer on the surface of the semiconductor layer after forming the semiconductor layer. Then, through the first etching process and the second etching process, the ohmic contact layer corresponding to the outside of the second photoresist area is removed. The aforementioned method for reducing the thickness of the photoresist layer includes performing an ashing process.

In the manufacturing method of the pixel structure of the present invention, the method of forming a patterned protective layer, in one embodiment, for example, after forming the channel layer, the source electrode and the drain electrode at the same time, forming a protective layer on the gate insulating layer and the thin film on the transistor. Next, the protective layer is patterned again. In another embodiment, the method of forming the patterned passivation layer is, for example, forming a passivation layer on the gate insulating layer and the thin film transistor after simultaneously forming the channel layer, the source electrode and the drain electrode. Then, a second mask is provided on the protective layer, and a part of the protective layer is exposed by the second mask. Then, a laser is used to irradiate the protection layer through the second mask, so as to remove a part of the protection layer exposed by the second mask. In other embodiments, the method of forming the patterned protective layer is, for example, forming a photoresist layer on a part of the drain after simultaneously forming the channel layer, the source and the drain. Next, a protection layer is formed to cover the gate insulating layer, the thin film transistor and the photoresist layer. After that, the photoresist layer is removed, so that the protection layer on the photoresist layer is also removed. In another embodiment, the method of forming the patterned protection layer may also be forming a protection layer on the gate insulating layer and the remaining second photoresist block. After that, the remaining second photoresist block is removed, so that the protection layer on the second photoresist block is also removed. The above-mentioned method for removing the photoresist layer includes a lift-off process.

In the manufacturing method of the pixel structure of the present invention, the method of forming the pixel electrode, in one embodiment, is, for example, forming an electrode material layer on the protective layer and the thin film transistor after forming the patterned protective layer. Next, the electrode material layer is patterned. In another embodiment, the method of forming the pixel electrode is, for example, forming a patterned protective layer, forming an electrode material layer on the protective layer and the thin film transistor. Then, a third mask is provided above the electrode material layer, and the third mask exposes a part of the electrode material layer. Then, use a laser to irradiate the electrode material layer through the third mask to remove part of the electrode material layer exposed by the mask. In other embodiments, the method of forming the pixel electrode can also be to form a photoresist layer on the On the patterned protective layer, where the photoresist layer exposes part of the drain. Next, an electrode material layer is formed to cover the patterned protection layer, the drain electrode and the photoresist layer. Then, the photoresist layer is removed so that the electrode material layer on the photoresist layer is also removed. The above-mentioned method for forming an electrode material layer includes forming an indium tin oxide layer or an indium zinc oxide layer by sputtering. In addition, the above-mentioned method for removing the photoresist layer includes a lift-off process.

In the manufacturing method of the pixel structure of the present invention, the method of forming the patterned protective layer and the pixel electrode may also be, for example, forming a protective layer on the gate insulating layer and the thin film transistor after the formation of the thin film transistor. Next, a photoresist layer is formed on the protective layer to pattern the protective layer, and the photoresist layer exposes part of the drain electrode and the gate contact pad region (Gate contact pad), wherein the photoresist The layer can be divided into a third photoresist block and a fourth photoresist block, and the thickness of the third photoresist block is smaller than the thickness of the fourth photoresist block. Thereafter, the thickness of the photoresist layer is reduced until the third photoresist block is completely removed. Next, an electrode material layer is formed to cover the patterned protection layer, the drain electrode and the photoresist layer. Then, the photoresist layer is removed, so that the electrode material layer on the photoresist layer is also removed.

In the manufacturing method of the pixel structure of the present invention, the laser energy irradiated on the first conductive layer is, for example, between 10 mJ/cm ² and 500 mJ/cm ² . In addition, the wavelength of the laser is, for example, between 100 nm and 400 nm.

The present invention uses laser lift-off to fabricate the gate, and the channel layer, source and drain are fabricated at the same time, so compared with the known pixel structure fabrication method, the process steps can be simplified and the fabrication cost of the photomask can be reduced . In addition, the masks used in laser lift-off are simpler than known high-precision photomasks when fabricating gates, so the mask used in the laser lift-off process steps is relatively cheap.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, preferred embodiments will be described in detail below together with the accompanying drawings.

Description of drawings

1A to 1G are flowcharts of manufacturing a known pixel structure.

2A to 2I are schematic diagrams of a manufacturing method of a pixel structure of the present invention.

3A to 3C are schematic diagrams of a laser lift-off process for forming a patterned protection layer.

4A-4C are schematic diagrams of a fabrication method for forming a patterned protection layer.

5A-5B are schematic diagrams of a fabrication method for forming a patterned protection layer.

6A to 6C are schematic diagrams of a laser lift-off process for forming a pixel electrode.

7A to 7C are schematic diagrams of a fabrication method for forming a pixel electrode.

8A-8D are schematic diagrams of a method for forming a patterned protection layer and a pixel electrode.

And, each reference numeral in the above-mentioned drawings is explained as follows:

10, 200 substrates

20, 212 grid

30, 220 gate insulating layer

40, 232 channel layer

50, 242 source

60, 244 drain

70 layers of protection

80, 282 pixel electrodes

90 pixel structure

210 The first conductive layer

230 semiconductor layer

240 Second conductive layer

250, 252, 254 photoresist layer

250a First photoresist block

250b Second photoresist block

250c third photoresist block

250d fourth photoresist block

260 thin film transistor

270 protective layers

272 patterned protective layer

280 electrode material layer

282 pixel electrodes

H contact opening

L laser

S1 first mask

S2 second mask

S3 third mask

Detailed ways

2A to 2G are schematic diagrams of a manufacturing method of a pixel structure of the present invention. Referring to FIG. 2A , firstly, a substrate 200 is provided, and the material of the substrate 200 is hard or soft materials such as glass and plastic. Next, a first conductive layer 210 is formed on the substrate 200, wherein the first conductive layer 210 is formed by, for example, sputtering, evaporation or other thin film deposition techniques.

Next, as shown in FIG. 2B , a first mask S1 is provided above the first conductive layer 210, and the first mask S1 exposes part of the first conductive layer 210, and a laser L is used to irradiate the first mask S1 through the first mask S1. A conductive layer 210 . In detail, the first conductive layer 210 irradiated by the laser L will absorb the energy of the laser L and be ablated from the surface of the substrate 200 . Specifically, the energy of the laser L used to strip the first conductive layer 210 is, for example, between 10 mJ/cm ² and 500 mJ/cm ² . In addition, the wavelength of the laser light L is, for example, between 100 nm and 400 nm.

Afterwards, as shown in FIG. 2C , after the part of the first conductive layer 210 exposed by the first mask S1 is removed, the remaining first conductive layer 210 forms the gate 212 . It is worth noting that, unlike the conventional fabrication of the grid 212 using expensive photomasks, the present invention uses the inexpensive mask S1 to complete the fabrication of the grid 212 , thus saving costs.

Next, referring to FIG. 2D , a gate insulating layer 220 covering the gate 212 is formed on the substrate 200, wherein the gate insulating layer 220 is, for example, formed by chemical vapor deposition (chemical vapor deposition, CVD) or other suitable film deposition techniques. The material of the gate insulating layer 220 is, for example, a dielectric material such as silicon oxide, silicon nitride, or silicon oxynitride. Next, the semiconductor layer 230 and the second conductive layer 240 are sequentially formed on the gate insulating layer 220 . In this embodiment, the material of the semiconductor layer 230 is, for example, amorphous silicon (amorphous silicon) or other semiconductor materials, and the material of the second conductive layer 240 is, for example, aluminum (Al), molybdenum (Mo), titanium (Ti), neodymium (Nd), the above-mentioned nitrides such as molybdenum nitride (MoN), titanium nitride (TiN), their laminated layers, the above-mentioned alloys or other conductive materials.

Next, please refer to FIG. 2E , after forming the second conductive layer 240 , a photoresist layer 250 is formed on the second conductive layer 240 above the gate 212 . As shown in FIG. 2E, the photoresist layer 250 can be divided into a first photoresist block 250a and a second photoresist block located on both sides of the first photoresist block 250a. 250b, and the thickness of the first photoresist block 250a is smaller than the thickness of the second photoresist block 250b. Next, a first etching process is performed on the second conductive layer 240 and the semiconductor layer 230 using the photoresist layer 250 as a mask.

Next, reduce the thickness of the photoresist layer 250 until the first photoresist block 250a is completely removed, as shown in FIG. 2F, wherein the method for reducing the thickness of the photoresist layer 250 is, for example, way of graying. Please continue to refer to FIG. 2F, after the first photoresist block 250a is completely removed, the second conductive layer 240 is etched with the remaining second photoresist block 250b as a mask. craft. In this embodiment, the first etching process and the second etching process are wet etching, for example, and in other embodiments, the etching process may also be dry etching.

Then, please refer to FIG. 2G, after the process of removing the remaining photoresist layer 250, the remaining second conductive layer 240 forms the source electrode 242 and the drain electrode 244, and the remaining semiconductor layer 230 forms the channel layer 232. , wherein the source 242 and the drain 244 are disposed in a partial region of the channel layer 232 , and the gate 212 , the channel layer 232 , the source 242 and the drain 244 form a thin film transistor 260 . In this embodiment, the process of removing the photoresist layer 250 is, for example, a wet etching process.

It is worth noting that, unlike the known ones, the channel layer 232 , the source electrode 242 and the drain electrode 244 of the present invention are formed simultaneously, which can reduce one photomask process and reduce the complexity of the process. In addition, the channel layer 232, the source electrode 242 and the drain electrode 244 of the thin film transistor 260 are formed, for example, by the same half-tone mask or gray-tone mask process. . In addition, in other embodiments, before forming the second conductive layer 240 and the photoresist layer 250 (shown in FIG. 2D ), an ohmic contact layer (not shown) may be formed on the surface of the semiconductor layer 230 first, Next, a portion of the ohmic contact layer (not shown) is removed through a first etching process and a second etching process. For example, ion doping can be used to form an N-type doped region on the surface of the semiconductor layer 230 to reduce the contact resistance between the semiconductor layer 230 and the second conductive layer 240 .

Referring to FIG. 2H, a patterned protective layer 272 is formed on the thin film transistor 260, wherein the patterned protective layer 272 exposes a part of the drain 244. As shown in FIG. The contact opening H. In this embodiment, the method of forming the patterned protective layer 272 is, for example, to form the protective layer 270 (shown in FIG. 3A ) on the thin film transistor 260 and the gate insulating layer 220 after the thin film transistor 260 is formed. Next, the passivation layer 270 is patterned again, wherein the method of patterning the passivation layer 270 is, for example, performing a photolithographic etching process.

Next, referring to FIG. 2I , a pixel electrode 282 is formed on the patterned protective layer 272 . In this embodiment, the pixel electrode 282 is connected to the drain electrode 244 through the contact opening H. Referring to FIG. In this embodiment, the method of forming the pixel electrode 282 is, for example, to form the electrode material layer 280 on the protection layer 270 and the drain electrode 244 after the patterned protection layer 272 is formed. Next, the electrode material layer 280 is patterned again, please refer to the description of FIGS. 6A-6C .

In addition, the above-mentioned method of forming the patterned protection layer 272 can also be completed by using a laser lift-off process. FIGS. 3A-3C are schematic diagrams of a laser lift-off process for forming a patterned protection layer. Please refer to FIG. 3A first. After the thin film transistor 260 is formed, a protective layer 270 is formed on the gate insulating layer 220 and the thin film transistor 260. The material of the protective layer 270 is, for example, silicon nitride or silicon oxide, and the method of forming it is, for example, It is fully deposited on the substrate 200 by physical vapor deposition or chemical vapor deposition. Next, as shown in FIG. 3B , a second mask S2 is provided above the protective layer 270 , and the second mask S2 exposes part of the protective layer 270 . Then, the laser L is used to irradiate the protection layer 270 through the second mask S2 , and the protection layer 270 irradiated by the laser L absorbs the energy of the laser L and is stripped from the surface of the thin film transistor 260 . Afterwards, as shown in FIG. 3C , after removing the portion of the passivation layer 270 exposed by the second mask S2 , a patterned passivation layer 272 exposing the contact opening H is formed.

Certainly, in other embodiments, the method for forming the patterned protective layer 272 may also be as shown in FIGS. 4A-4C . Referring to FIG. 4A first, after the thin film transistor 260 is formed, a photoresist layer 252 is formed on part of the drain 244 . Next, as shown in FIG. 4B , a protective layer 270 is formed to cover the gate insulating layer 220 , the thin film transistor 260 and the photoresist layer 252 . Afterwards, as shown in FIG. 4C , the photoresist layer 252 is removed, so that the protective layer 270 on the photoresist layer 252 is also removed to form a patterned protective layer 272 exposing the contact opening H. . In this embodiment, the method of removing the photoresist layer 252 is, for example, performing a lift-off process.

In addition, FIGS. 5A-5B illustrate another method for forming a patterned protection layer. Please refer to FIG. 5A first, the method for forming the patterned protective layer 272 may be to form the protective layer 270 on the gate insulating layer 220 and the remaining second photoresist before removing the remaining second photoresist block 250b. etchant block 250b. Next, please refer to FIG. 5B, after removing the remaining second photoresist block 250b, the protective layer 270 on the second photoresist block 250b is also removed to form a patterned protective layer 272 . In this embodiment, the method of removing the photoresist layer 250 b is, for example, performing a lift-off process.

In addition, the above method of forming the pixel electrode 282 can also be completed by using a laser lift-off process. FIGS. 6A-6C are schematic diagrams of a laser lift-off process for forming a pixel electrode. Please refer to FIG. 6A first. After forming the patterned protective layer 272, an electrode material layer 280 is formed on the patterned protective layer 272. The method for forming the electrode material layer 280 is, for example, forming an indium tin oxide layer or an indium zinc layer by sputtering. oxide layer. Next, as shown in FIG. 6B , a third mask S3 is provided above the electrode material layer 280, and the third mask S3 exposes part of the electrode material layer 280, and then the electrode material layer is irradiated with the laser L through the third mask S3. 280. Then, referring to FIG. 6C , after removing part of the electrode material layer 280 exposed by the third mask S3 , a pixel electrode 282 connected to the drain electrode 244 through the contact opening H is formed.

Certainly, in other embodiments, the method for forming the pixel electrode 282 may also be as shown in FIGS. 7A-7C . Referring to FIG. 7A , after forming the patterned protection layer 272 , a photoresist layer 254 is formed on the patterned protection layer 272 , wherein the photoresist layer 254 exposes a portion of the drain electrode 244 . Next, as shown in FIG. 7B , an electrode material layer 280 is formed to cover the patterned passivation layer 272 , the drain electrode 244 and the photoresist layer 254 . Then, referring to FIG. 7C , the photoresist layer 254 is removed, so that the electrode material layer 280 on the photoresist layer 254 is removed together, and the remaining electrode material layer 280 constitutes the pixel electrode 282 . The above-mentioned method for removing the photoresist layer is, for example, a lift-off process.

In addition, FIGS. 8A-8D illustrate another method for forming a patterned protection layer and a pixel electrode. As shown in FIG. 8A, a protective layer 270 is deposited on the gate insulating layer 220 and the thin film transistor 260, and then a photoresist layer 250 is formed on the protective layer 270. The photoresist layer 250 can be divided into the first Three photoresist blocks 250c and a fourth photoresist block 250d, the third photoresist block 250c is located on the edge of the drain electrode 244 and the edge of the storage capacitor C, in order to avoid the second conductive In the subsequent process, the layer 240 is over-etched on the slope of the film stack on the thin film transistor 260 and the storage capacitor C to produce an undercut of the gate insulating layer 220, and the fourth photoresist block 250d is located part of the thin film transistor 260, and the thickness of the third photoresist block 250c is smaller than the thickness of the fourth photoresist block 250d, wherein the material of the photoresist layer 250 is, for example, an organic material. Next, referring to FIG. 8B , the protective layer 270 is etched using the photoresist layer 250 as a mask to expose part of the drain 244 of the thin film transistor 260 to form a patterned protective layer 272 as shown in FIG. 8B .

Next, as shown in FIG. 8C , the thickness of the photoresist layer 250 is reduced until the third photoresist block 250c is completely removed. After the third photoresist block 250c is completely removed, only the fourth photoresist block 250d is left, and then electrode material layer 280 is deposited to cover the fourth photoresist block 250d, exposing part of the drain 244 of the transistor 260, part of the substrate 200, and the patterned protective layer 272, and then remove the remaining photoresist layer 250d, so that the electrode material layer 280 on the remaining photoresist layer 250d At the same time, it is removed, and the remaining conductive layer constitutes the pixel electrode 282 as shown in FIG. 8D , and is electrically connected to the drain 244 of the transistor 260 .

Based on the above, the present invention manufactures the channel layer, the source electrode and the drain electrode at the same time, so it has the advantage of reducing the process steps compared with the conventional one. Moreover, the present invention adopts laser L irradiation to form the gate instead of the known photolithography and etching process, so the method for manufacturing the pixel structure proposed by the present invention has at least the following advantages:

1. The fabrication method of the pixel structure proposed by the present invention does not need photolithography process for the gate process, so compared with the high-precision photomask process used in the photolithography process, the production cost of the photomask can be reduced.

2. Since there are fewer processes for making pixel structures, lengthy photomask processes (such as photoresist coating, soft baking, hard baking, exposure, development, etching, photoresist stripping, etc.) can be reduced Defects that occur when making pixel structures.

3. The method of laser stripping part of the protective layer proposed by the present invention can be applied to the repair of the pixel electrode in the pixel repair, so as to remove the possible residual pixel electrode (ITOresidue) in the pixel structure process and solve the problem between the pixel electrodes. Short circuit problem, thereby increasing the production pass rate.

Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention, and any skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention, so the protection of the present invention The scope is to be regarded as defined by the appended claims.

Claims (19)

1. production method of pixel structure comprises:

Substrate is provided;

Form first conductive layer on this substrate;

Provide first shade in this first conductive layer top, and this first shade expose this first conductive layer of part;

Use laser to shine this first conductive layer, removing this first shade institute this first conductive layer of exposed portions, and form grid through this first shade;

Form gate insulator on this substrate, to cover this grid;

Form channel layer, source electrode simultaneously and drain on this gate insulator of this grid top, wherein this source electrode and this drain configuration be in the subregion of this channel layer, and this grid, this channel layer, this source electrode and should drain electrode formation thin-film transistor;

Form the patterning protective layer on this thin-film transistor, this patterning protective layer exposes this drain electrode of part; And

Form pixel electrode, be electrically connected at this drain electrode.

2. production method of pixel structure as claimed in claim 1, the method that wherein forms this channel layer, this source electrode and this drain electrode simultaneously comprises:

Form semiconductor layer on this gate insulator;

Form second conductive layer on this semiconductor layer;

Form the photoresist layer on this second conductive layer of this grid top, wherein this photoresist layer can be divided into the first photoresist block and the second photoresist block that is positioned at these first block both sides, and the thickness of this first photoresist block is less than the thickness of this second photoresist block;

With this photoresist layer is that mask carries out first etch process to this second conductive layer and this semiconductor layer;

Reduce the thickness of this photoresist layer, removed fully up to this first photoresist block; And

With remaining this second photoresist block is that mask carries out second etch process to this second conductive layer, so that remaining this second conductive layer constitutes this source electrode and this drain electrode, and this remaining semiconductor layer constitutes this channel layer.

3. production method of pixel structure as claimed in claim 2, the method that wherein reduces this photoresist layer thickness comprise carries out cineration technics.

4. production method of pixel structure as claimed in claim 2, the method that wherein forms this patterning protective layer comprises:

Form protective layer on this gate insulator and remaining this second photoresist block; And

Remove remaining this second photoresist block, so that this protective layer on this second photoresist block is removed in the lump.

5. production method of pixel structure as claimed in claim 1, the method that wherein forms this patterning protective layer comprises:

Part forms the photoresist layer on should drain;

Form protective layer, to cover this gate insulator, this thin-film transistor and this photoresist layer; And

Remove this photoresist layer, so that this protective layer on this photoresist layer is removed in the lump.

6. production method of pixel structure as claimed in claim 5, the method that wherein removes this photoresist layer comprise lifts off technology.

7. production method of pixel structure as claimed in claim 1, the method that wherein forms this patterning protective layer comprises:

Form protective layer on this gate insulator and this thin-film transistor; And

This protective layer of patterning.

8. production method of pixel structure as claimed in claim 1, the method that wherein forms this patterning protective layer comprises:

Form protective layer on this gate insulator and this thin-film transistor;

Provide second shade in this protective layer top, and this second shade expose this protective layer of part; And

Use laser to shine this protective layer, to remove this second shade institute this protective layer of exposed portions through this second shade.

9. production method of pixel structure as claimed in claim 1, the method that wherein forms this channel layer, this source electrode and this drain electrode also comprises:

After forming this semiconductor layer, form ohmic contact layer in this semiconductor layer surface: and

Through this first etch process and this second etch process, remove corresponding to this ohmic contact layer outside this second photoresist block.

10. production method of pixel structure as claimed in claim 1, the method that wherein forms this pixel electrode comprises:

Form electrode material layer in this patterning protective layer and on should draining; And

This electrode material layer of patterning.

11. comprising by sputter, production method of pixel structure as claimed in claim 10, the method that wherein forms this electrode material layer form indium tin oxide layer or indium-zinc oxide layer.

12. production method of pixel structure as claimed in claim 1, the method that wherein forms this pixel electrode comprises:

Form electrode material layer in this patterning protective layer and on should draining;

Provide the 3rd shade in this conductive layer top, and the 3rd shade expose this electrode material layer of part; And

Use laser to shine this electrode material layer, to remove the 3rd shade institute this electrode material layer of exposed portions through the 3rd shade.

13. comprising by sputter, production method of pixel structure as claimed in claim 12, the method that wherein forms this electrode material layer form indium tin oxide layer or indium-zinc oxide layer.

14. production method of pixel structure as claimed in claim 1, the method that wherein forms this pixel electrode comprises:

Form the photoresist layer on this patterning protective layer, wherein this photoresist layer exposes this drain electrode of part;

Form electrode material layer, to cover this patterning protective layer, this drain electrode and this photoresist layer; And

Remove this photoresist layer, so that this electrode material layer on this photoresist layer is removed in the lump.

15. comprising, production method of pixel structure as claimed in claim 14, the method that wherein removes the photoresist layer lift off technology.

16. comprising by sputter, production method of pixel structure as claimed in claim 14, the method that wherein forms this electrode material layer form indium tin oxide layer or indium-zinc oxide layer.

17. production method of pixel structure as claimed in claim 1, wherein the energy of this laser is between 10mJ/cm ²To 500mJ/cm ²Between.

18. production method of pixel structure as claimed in claim 1, wherein this Wavelength of Laser is between between the 100nm to 400nm.

19. production method of pixel structure as claimed in claim 1, the method that wherein forms this patterning protective layer and this pixel electrode comprises:

Form protective layer on this gate insulator and this thin-film transistor;

Form the photoresist layer on this protective layer, with this protective layer of patterning, this photoresist layer exposes this drain electrode and this gate insulator of part, wherein this photoresist layer can be divided into the 3rd photoresist block and the 4th photoresist block, and the thickness of the 3rd photoresist block is less than the thickness of the 4th photoresist block;

Reduce the thickness of this photoresist layer, removed fully up to the 3rd photoresist block;

Form electrode material layer, to cover this patterning protective layer, this drain electrode and this photoresist layer; And

Remove this photoresist layer, so that this electrode material layer on this photoresist layer is removed in the lump.

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