CN101110381B - Substrate processing with rapid temperature gradient control - Google Patents
Substrate processing with rapid temperature gradient control Download PDFInfo
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- CN101110381B CN101110381B CN200710097737XA CN200710097737A CN101110381B CN 101110381 B CN101110381 B CN 101110381B CN 200710097737X A CN200710097737X A CN 200710097737XA CN 200710097737 A CN200710097737 A CN 200710097737A CN 101110381 B CN101110381 B CN 101110381B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.
Description
Technical field
Embodiments of the present invention relate to the substrate processing technology of utilization rapid temperature gradient control on entire substrate.
Background technology
In the process of handling such as the substrate of semiconductor and display, use electrostatic chuck that substrate is fixed in the chamber to handle the layer on this substrate.A kind of electrostatic chuck commonly used comprises uses the ceramic coated electrode.When electrode is charged, static electricity gathered electric charge on electrode and substrate, and consequent electrostatic force is fixed on substrate on the chuck.Usually, by keep helium with the rate of heat delivery control substrate temperature in the whole microcosmic gap at the interface between the surface of the back side of improving substrate and card at the substrate back.Electrostatic chuck can be by base support, and this base has passage, is used for making liquid flow through to cool off or heated chuck from described passage.After substrate is securely fixed in chuck, plasma is introduced in the chamber and formed to process gas to handle substrate.Substrate can be handled by CVD, PVD, etching, injection, oxidation, nitrogenize or other similar technology.
In this traditional substrate manufacturing process, in processing procedure, substrate maintained single temperature.Usually, substrate utilizes the wafer supporting spring by the slit in the chamber and is placed on the elevating lever, the main body of this elevating lever extend past electrostatic chuck.Thereby elevating lever is regained from chuck substrate is placed on the surface of chuck then.Substrate temperature rises to preset temperature rapidly, then utilize in the chuck heater or by the plasma stability that forms in the chamber remain on this temperature.Can further control underlayer temperature by temperature and flow velocity that the refrigerant of base pipeline and chuck below is flow through in control, wherein this refrigerant is used for removing the heat of chuck.
Though traditional processing chamber is suitable for making during technology substrate to maintain stable single temperature, they can not make underlayer temperature change rapidly in single process cycles.In some technologies, need make underlayer temperature fast rise or decline, during technology, to obtain specific Temperature Distribution.For example, need to change rapidly with at the different material of different temperature etching on substrate at the different phase underlayer temperature of etch process.In these different etch phase, the process gas that offers chamber is also can be on composition different or be of identical composition.Among another embodiment, in etch process, this Temperature Distribution is conducive to deposited sidewalls condensate on the sidewall that carries out etched position on the substrate, and afterwards in the identical etching technique, remove the sidewall condensate by the temperature that improves etch process, or vice versa.Similarly, in depositing operation, for example, in order on substrate, at first to be deposited as stratum nucleare, and the then sedimentary deposit of growth heat treatment on substrate, may need to make first technological temperature to be higher or lower than second technological temperature.Traditional substrate processing chamber and their internal structure can not fully make underlayer temperature rise rapidly usually or descend.
When in technical process, when substrate be in inhomogeneous process conditions in the radial direction the time another complex situations can appear, this situation causes producing inhomogeneous concentric circles and handles band.This inhomogeneous process conditions cause by the distribution of gas in the chamber or plasma, and described distribution is depended on the position of entrance in the chamber and exhaust outlet usually and be different.The mass transfer mechanical device also can change gaseous material in the zones of different diffusion of whole lining lower surface and the speed that arrives.Non-homogeneous heat load in chamber also may cause non-homogeneous processing.For example, owing to all may cause different heat loads from the energy of plasma sheath course substrate coupling or from chamber wall radiation reflected heat.People do not wish to take place to handle deviation in entire substrate, because can cause zones of different (for example, periphery and substrate zone, center) the active of manufacturing at substrate to have different characteristics with passive electronic like this.Therefore, during handling substrate, people wish to reduce the variation of process rate and other technology characteristics on the substrate.
Therefore, people wish to exist a kind of processing chamber and chamber part, allow substrate temperature pending in chamber to rise rapidly and decline.And, also wish the temperature of the zones of different on the treatment surface of substrate is controlled to reduce the influence of the inhomogeneous treatment conditions that the substrate lower surface radially locates.In addition, wish during technology, the Temperature Distribution of substrate lower surface to be controlled.
Summary of the invention
The object of the present invention is to provide a kind of processing chamber and chamber part that can carry out fast temperature control to pending substrate zones of different, can solve basically because the shortcoming that exists in the prior art produces one or more problem.
According to an aspect of the present invention, the invention provides a kind of can in processing chamber, fixing and the substrate support assembly of heated substrate, this assembly comprises: the ceramic disk that (a) comprises substrate receiving surface and the relative back side, described ceramic disk comprises that the electrode that (i) is embedded in the described ceramic disk fixes the substrate that is placed on the described substrate receiving surface to produce electrostatic force, and (ii) is embedded in the described ceramic disk heater with heated substrate; (b) the cooling agent base comprises coolant channel, is used at described coolant channel circulating coolant, and described coolant channel comprises entrance and terminal; (c) flexible layer makes described ceramic disk mutually bonding with described cooling agent base, and described flexible layer comprises that (i) has the silicon that embeds aluminum fiber, or (ii) have in the acrylic acid that embeds silk screen one of at least.
According to a further aspect in the invention, the invention provides a kind of can in processing chamber, fixing and the electrostatic chuck of heated substrate, it is characterized in that described electrostatic chuck comprises: (a) ceramic disk, comprise substrate receiving surface and opposing backside surface, described ceramic disk comprises the thickness less than about 7mm; (b) be embedded in electrode in the described ceramic disk, fix the substrate that is positioned on the described substrate receiving surface for generation of electrostatic force, and (c) be embedded in the substrate that the heater in the described ceramic disk holds at described substrate receiving surface with heating.
According to a further aspect in the invention, the invention provides and a kind ofly be adhered to flexible layer on the cooling agent base for the ceramic disk that will comprise electrode and heater, the cooling agent base comprises coolant channel, cooling agent is circulated in described coolant channel, described flexible layer comprises that following material one of at least: (a) have the silicon of the aluminum fiber of embedding, or (b) have the acrylic acid of the silk screen of embedding.
According to a further aspect in the invention, the invention provides a kind of substrate-treating apparatus, comprising: (a) processing chamber, comprise the substrate support that is installed in the processing chamber, described substrate support comprises: the ceramic disk that (i) has electrode and heater; (ii) be positioned at the base under the described ceramic disk, described base comprises coolant channel; And (iii) be used for making cooling agent maintain the cooler of preset temperature, described cooling agent offers the passage of described base; (b) gas distributor is used for process gas is offered described processing chamber; (c) gas exciter is used for exciting described process gas; And (d) exhaust outlet, discharge described process gas by described exhaust outlet from described chamber; And the controller that (e) comprises the temperature control instruction collection, described instruction set comprises that code (i) is before raising imposes on the power stage of the heater in the described ceramic disk, coolant temperature in the cooler is increased to higher value, perhaps (ii) before reduction imposes on the power stage of the heater in the described ceramic disk, make the coolant temperature in the cooler be reduced to lower value, thereby make described substrate temperature or to reduce by speed rising faster.
Therefore, the present invention can independently control the temperature in the different heating district of ceramic disk on the electrostatic chuck, thereby realizes the fast temperature control to different substrates zone.
Describe one or more execution mode of the present invention in detail below with reference to accompanying drawing.As seen other purpose of the present invention, feature, aspect and advantage also will become more obviously by reference to the accompanying drawings with in claims in following description.
Description of drawings
Accompanying drawing by following specification, claims and the expression embodiment of the invention can make described feature of the present invention, scheme and advantage more apparent.But, should be realized that each feature that adopts in the present invention, should not only limit to concrete diagram, and the present invention includes the combination in any of these features, wherein:
Fig. 1 is the schematic side view of embodiment with substrate chamber of electrostatic chuck;
Fig. 2 is the cross section schematic side view of the embodiment of electrostatic chuck;
Fig. 3 is the elevational schematic view of the electrostatic chuck of Fig. 1;
Fig. 4 A and Fig. 4 B are for the schematic diagram in top down perspective (Fig. 4 A) of the embodiment of the base of electrostatic chuck and look up perspective diagram (Fig. 4 B);
Fig. 5 is the schematic side view of optic temperature sensor;
Fig. 6 A is the cross section schematic side view of ring assemblies on the electrostatic chuck of Fig. 4 A and Fig. 4 B;
Fig. 6 B is the partial schematic diagram of the ring assemblies of Fig. 6 A;
The schematic diagram that Fig. 7 changes in a time period for the underlayer temperature that describe to utilize the cooler that is in a steady temperature;
Fig. 8 is the temperature difference between description electrostatic chuck and the cooler and the graph of a relation of heater power percentage; And
Fig. 9 is the curve chart of the variations in temperature of description electrostatic chuck.
Embodiment
In Fig. 1, schematically shown the embodiment scheme of the chamber 106 of energy etch substrate 25.Chamber 106 expression Decoupled Plasma Source (DPS
TM) chamber, the inductively coupled plasma etching chamber that provides for the Applied Materials (Applied Materials Inc.) of the Santa Clara that is positioned at California.This DPS chamber 106 can be used for
Among the Integrated Processing System, provided by the Applied Materials (Applied Materials Inc.) of the Santa Clara that is positioned at California.Yet, also other processing chambers can be used in combination with the present invention, comprise that for example, capacitive coupling parallel-plate chamber, electromagnetism strengthen the inductively coupled plasma etching chamber of ion(ic) etching chamber, different designs, and deposition chambers.Though equipment of the present invention and optimal process ground are used for the DPS chamber, the invention provides this chamber and only be used for describing the present invention, and should not understand or be interpreted as limiting the scope of the invention.
With reference to Fig. 1, a kind of typical chamber 106 comprises the shell 114 that is made of enclosure wall wall 118, and described enclosure wall wall 118 comprises sidewall 128, diapire 122 and pushes up 130.Even shape shown in top 130 can comprise, perhaps for example, the denomination of invention of submitting as people such as Chinn is the United States Patent (USP) the 7th of " method of using plasma source gas regulation etching agent system plasma etching deep recess figure (Method of Plasma Etching a Deeply Recessed Feature in a Substrate Using a Plasma Source Gas Modulated Etchant System) ", 074, the domed shape with most footpaths arch described in No. 723 is incorporated herein the full content of this patent as a reference.Wall 118 is used usually such as the metal of aluminium or ceramic material manufacturing.Top 130 and/or sidewall 128 also can have the transparent window 126 of radiation, allow radiation to pass through this chamber to monitor ongoing technology in chamber 106.Plasma is formed in the process island that is limited by processing chamber 106, substrate support and dome 130.
The thickness that it is believed that ceramic disk influences the fast rise of underlayer temperature and the ability of decline basically.If ceramic disk 24 is too thick, then time of needing of this ceramic disk 24 oversize and temperature is risen and descend, cause the temperature of upper substrate need spend the corresponding long time and arrive default set-point temperature.In addition, it is also believed that if ceramic disk 24 is too thin that then it will can not make substrate maintain steady temperature in the technology implementation, and cause the underlayer temperature fluctuation.In addition, the thickness effect of ceramic disk 24 is embedded in the work of the electrode 36 in the ceramic disk 24.If it is too thick to be located immediately at the thickness of 24 layers of ceramic disk on the electrode 36 of embedding, then electrode 36 can not be coupled to energy the plasma that forms in the process island effectively.On the other hand, if ceramic disk 24 thickness around the electrode 36 are too thin, are applied to radio frequency (RF) voltage on the electrode 36 and can discharge for producing electric arc and causing the plasma of plasma instability.Therefore, the thickness of ceramic disk 24 is accurately controlled approximately less than 7mm, for example, about 4 to about 7mm thickness; And in a scheme, ceramic disk thickness is 5mm.In these thickness levels, in technical process, ceramic disk 24 allows underlayer temperature to rise rapidly and decline reduces temperature fluctuation simultaneously, and can not cause plasma instability basically.
Utilization be embedded in electrode 36 in the ceramic disk 24 produce electrostatic force with the substrate fixed placement on substrate receiving surface 26, and alternatively, with the plasma capacitance coupling energy that in chamber, forms.Electrode 36 is the conductor such as metal, and can form and be one pole or bipolar electrode.Monopolar electrode comprises single conductor, and is electrically connected with external power is single, and cooperates the whole base plate that is fixed on the ceramic disk 20 is applied bias voltage with the plasma that covers of charging of forming in chamber.Bipolar electrode has two or more conductors, and wherein each has bias voltage to produce the electrostatic force that is used for keeping substrate with respect to another.Electrode 36 can be shaped as woven wire or has the metal dish of suitable open area.For example, the electrode 36 that comprises monopolar electrode can be the single continuous metal silk screen in the ceramic disk of being embedded in as shown in the figure.An execution mode that comprises the electrode 36 of bipolar electrode can be the straight wall of C type a pair of Embedded C type dish respect to one another.Electrode 36 can be by the alloy composition of aluminium, copper, iron, molybdenum, titanium, tungsten or above-mentioned substance.A scheme of electrode 36 comprises the molybdenum net.Electrode 36 links to each other with binding post 58, and wherein binding post 58 will be fed to electrode 36 from the electrical power of external power source, and this external power source 230 comprises dc voltage source and RF voltage source alternatively.
Alternatively, a plurality of hot transport gas pipeline 38a, 38b cross ceramic disk 24 and end on the substrate receiving surface that is positioned at ceramic disk 20 26 port 40a, 40b and sentence hot transport gas is offered substrate receiving surface 26.Thereby provide below the substrate back 34 can be this hot transport gas of helium for example make heat away from above substrate 25 and flow to the receiving surface 26 of ceramic disk 24.For example, first gas pipeline can be set hot transport gas being offered the thermal treatment zone, the center 42a of substrate receiving surface, and the second gas pipeline 38b can be set hot transport gas is offered the peripheral thermal treatment zone 42b of substrate receiving surface 26.The center of the substrate receiving surface 26 of ceramic disk 24 and peripheral thermal treatment zone 42a, 42b make the counterpart of lining lower surface 44, for example, center on the substrate 25 maintains different temperature to compensate inhomogeneous concentric processing band, because corresponding inhomogeneous band with inhomogeneous process conditions causes producing this inhomogeneous concentric processing band with periphery 46a, 46b.
In a scheme, first and second heater coils 50,52 respectively comprise the annulus heat-resistant element that is arranged side by side, and basically at grade.For example heater coil 50,52 is a continuous donut, described donut in the main body of ceramic disk 24 gradually radially to inside turn.In one embodiment, heater comprises coil, and described coil has with first annulus at first length interval with second length, second annulus at interval greater than first length.Second annulus is arranged at the lift span place in the ceramic disk.Heater coil 50,52 also can be the circling coil that spirals around by coil central axe, for example, similar filament, described circling coil is arranged in the concentric circles of ceramic disk 24 inner chambers.Heat-resistant element can be made up of different resistance material such as for example tungsten or molybdenum etc.
In conjunction with utilizing heater coil 50,52, also can control so that the substrate processing speed on the substrate 25 is more even at two air-transmitting air pressure of the heat of thermal treatment zone 42a, 42b.For example, can set two thermal treatment zone 42a, 42b, make two thermal treatment zone 42a, 42b under different equilibrium air pressures, hold hot transport gas respectively so that the different rate of heat delivery from substrate 25 back sides 34 to be provided.Can make the hot transport gas of described different air pressure eject the realization this point by two pipeline 38a, 38b with two diverse locations at substrate receiving surface 26 respectively by the hot transport gas that different air pressure are provided.
The back side 28 of ceramic disk 24 can have the table top 30 (mesa) of a plurality of separations as shown in Figure 3.In one embodiment, the cylindrical protrusion of table top 30 for being separated from each other by a plurality of gaps 32.In application, gap 32 is full of such as the gas of air to regulate from the back side 28 rate of heat delivery to base lower surface.In one embodiment, table top 30 comprises columnar projections, described columnar projections even can be shaped as pillar, and columnar projections extends upward from surface 28, and pillar has rectangle or circular section shape.The height of table top 30 can be from about 10 to about 50 microns, and the diameter of table top 30 is from about 500 to about 5000 microns.Yet table top 30 also can have other shape and size, for example, and circular cone or rectangular block, perhaps even not unidimensional flange.In a scheme, utilize the pearl bombardment back side 28 with suitable little average bead size (for example tens microns) to form table top 30 and have the moulding table top 30 of interfering gap 32 with formation with the material that utilizes corrosion method to etch away the back side 28.
In one embodiment, as shown in Figure 5, each optic temperature sensor 60 comprises heat sensor contact 68, and this contact 68 comprises the copper cap 70 of the closing cylinder that is configured as the dome-shaped top 74 that has sidewall 72 and be used as contact 64.Copper cap 70 can be made up of oxygenless copper material.Phosphorous connector 76 embeds inner, and directly contacts with the top 74 of copper cap 70.The 76 pairs of hot sensor contact 68 of phosphorous connector that are embedded in the copper cap 70 provide faster and more responsive thermal response.The contact 64 of copper cap 70 is that dome-type top 74 is to allow can not corrode or destroy substrate with the repeating contact of different substrates 25.Copper cap 70 has for the groove 78 of receiving ring epoxy resins 79 to paste caps 70 in sensor contact 68.
The substrate support 90 that comprises electrostatic chuck 20 is fixed on the cooling agent base 91, and this cooling agent base 91 is used for supporting and fixing chuck 20, and cooling chuck (Fig. 4 A and Fig. 4 B).This base 91 comprises the metal master 92 with top surface 94, and this top surface 94 has chuck holding portion 96 and periphery 98.The chuck holding portion 96 of top surface 94 is for the back side 28 of the ceramic disk 24 of holding electrostatic chuck 20.The periphery 98 of base 91 exceeds radially outer extension of ceramic disk 24.The periphery 98 of base 91 can be used for holding clamping ring (clamp ring) 100, and clamping ring (clamp ring) 100 is fixed on the top surface of base periphery.The metal master 92 of base 91 has a plurality of path 10s 2, and a plurality of path 10s 2 lead to the top surface 94 of base 91 from the lower surface 104 of base 91, for example, is used for holding terminal 58a-d or provides to gas pipeline 38a, the b of ceramic disk 24 and mention.
The chuck holding portion 96 of the top surface 94 of base 91 comprises one or more groove 108a, 108b so that air remains in and the back side of the ceramic disk 24 of flowing through.In one embodiment, chuck holding portion 96 comprises that the peripheral grooves 108a that cooperates with a plurality of table tops 30 on the back side that is positioned at ceramic disk 24 is with the rate of heat delivery of control from the periphery 54b of ceramic disk 24.In another embodiment, the chuck receiving surface of base comprises peripheral grooves so that air is retained on the back side table top of ceramic disk.In another embodiment, utilize central recess 108b to be combined to regulate the heat transmission from the core 54a of ceramic disk 24 with peripheral grooves 108a.
Groove 108a, 108b in the top surface 94 of base 91 cooperates with the temperature on the further adjusting substrate processing surface 44 with table top 30 on the back side 28 that is positioned at ceramic disk 24.With distribute on 28 overleaf table top 30 on the back side 28 that is positioned at ceramic disk 24 of pattern even or heterogeneous.Thereby total heat transfer area of total contact surface amount control interface between the top surface 94 of the shape of table top 30, size and spacing control table top 30 and base 91.When even intermittent pattern, keep identical basically with the distance between the table top 30 of gap 32 expressions, and when non-homogeneous being separated by, clearance distance is different on surface 28.
Alternatively, as shown in Figure 3, the back side 28 of ceramic disk 24 can have first array 39 table tops 30 adjacent with the entrance of coolant channel 111 in base, and away from the entrance 95 of passage 111 or even second array 41 table tops 30 adjacent with the terminal 97 of coolant channel 111.The second array table top 30 has the different gap distance that forms the pattern be different from first array 39, thus regulate adjacent with coolant channel 111 or away from the rate of heat delivery in zone.For example, the temperature of keeping usually near the part place of the ceramic disk 24 on feeder connection 95 tops of the coolant channel 111 that receives fresh cooling agent is lower than the ceramic disk temperature on 111 sections of the coolant channels that are positioned at channel end.This is because of the whole passage length that passes through along with cooling agent in the base, and utilization is caught from the heat of ceramic disk 24 and heated.Therefore, be positioned over the zone that the substrate 25 on the contact surface 26 of ceramic disk 24 is positioned on the coolant channel terminal 97 and have the Temperature Distribution of higher temperature with respect to the zone that is positioned on the entrance 96.By the first array table top 30 that separates with first clearance distance is provided at feeder connection, and near 41 pairs of these Temperature Distribution of second array that provide to be different from the table top 30 that second clearance distance of first distance separates passage 111 terminals 97 compensate.When first distance during greater than second distance, be lower than from the rate of heat delivery that is located immediately at the part of substrate 25 on second array 41 from the rate of heat delivery that is located immediately at the part of substrate 25 on first array.Therefore, thus carry out heat transmission from the first substrate zone from the rate of heat delivery in the second substrate zone and cause the first area temperature to become being higher than the second area compensation and be equilibrated at the Temperature Distribution that the whole lining lower surface 44 of coolant channel entrance 95 and terminal 97 can produce to be lower than.In one embodiment, first array 39 of table top 30 separates with first spacing at least about 5mm, and second array 41 of table top 30 separates with second spacing less than about 3mm simultaneously.
Change the contact area size of first array 39 of table top 30 by the size with respect to the contact area of second array 41 of table top 30, can obtain identical Temperature Distribution control.For example, the first size of the contact area of first array 39 of table top 30 can be less than about 2000 microns, and the contact area of second array 41 of table top 30 can be at least about 3000 microns simultaneously.First and second sizes can be the diameter of the table top 30 that comprises column.In one embodiment, first size is that 1000 microns diameter and second is of a size of 4000 microns diameter.Contact area is more little, and the temperature on the substrate processing surface 44 is more high.In addition, between table top 30 and the back side 28, provide air to be used as another thermoregulator.
Another factor that influences the rapid ability that rises and reduce of underlayer temperature is the character of hot interface between ceramic disk 24 and the base 91.Have the interface of thermal conductivity preferably at the interface place for preferred, thereby allow to utilize the cooling agent through base 91 easily to remove heat from ceramic disk 24.In addition, interface is preferably flexible, because high temperature difference causes thermal expansion stress between ceramic disk 24 and cooling agent base 91, this will cause other thermal stress of breaking or causing ceramic disk 24 to be damaged.In one embodiment, adopt flexible layer positive bonding with the back side of ceramic disk 24 and base 91.Make flexible layer so that good thermal conductivity to be provided, simultaneously still for fully flexible to absorb high thermal stress.In one embodiment, in flexible layer, comprise the silicon that embeds aluminum fiber.These silicon materials have the thermal conductivity that good flexibility has appropriateness simultaneously.Improve the thermal conductivity of silicon materials with the aluminum fiber that embeds.In another embodiment, flexible layer comprises the acrylic acid that embeds silk screen.In addition, select acrylic polymer to adapt to thermal stress, the silk screen of Qian Ruing improves the thermal conductivity of structure simultaneously.
Ring assemblies also comprises edge ring 180, and what edge ring 180 comprised the footing 184 that has on the top surface 174 that is arranged on binding ring 100 is with 182.Edge ring also have around the annular outer wall 186 of the exterior side surfaces 176 of binding ring 100 with reduce or even stop the deposition of sputtering sedimentation thing on binding ring 100 fully, otherwise this exterior side surfaces 176 will be exposed to process environments.Edge ring 180 also comprises the flange 190 of the second step 33 of the peripheral ledge 29 that hides ceramic disk 24, thereby makes flange 190 and the overlapping edge that is positioned at the substrate 25 on ceramic disk 24 receiving surfaces form sealing.Flange 190 is included in the protrusion 194 that the cantilever edge 196 of substrate 25 stops below.The interior circumference of flange 190 stop collars 180 wherein encircles the zone of 180 ceramic disk 24 that do not covered by substrate 25 with protection during handling around the periphery of substrate 25.The binding ring 100 of ring assemblies 170 and edge ring 180 cooperate to reduce the formation of process deposits things at the electrostatic chuck 20 of base 91 upper supports during the processing of substrate 25 in processing chamber 106, and protection electrostatic chuck 20 does not weather.The side surface of the exposure of edge ring 180 protection substrate supports 90 is to reduce the erosion of energetic plasma material.Ring assemblies can be removed easily with the deposit of cleaning from the exposed surface of ring 100,180, thereby entire substrate support 90 to be cleaned needn't be removed.Edge ring 180 comprises pottery, and is for example quartzy.
In operation, by gas delivery system 150 gas is fed chamber 106, this gas delivery system 150 comprises the process gas source 204 with source of the gas, thereby each source of the gas all arranges the control damper 158 that has such as mass flow controller the gas of setting flow velocity is therefrom passed through.Pipeline provides gas to mixed manifold (not shown), gas is mixed to form the process gas composition of expection in this manifold.Mix manifold containing provides the gas distributor (not shown) 162 with gas vent in chamber 106.Gas vent can end at the place, periphery of substrate support 20 through chamber sidewall 128 or end at the top of substrate 25 through top 130 (ceiling).The technology waste gas that consumes and byproduct are discharged from chamber 106 by gas extraction system 210, this gas extraction system 210 comprises one or more exhaust outlets 211, be used for receiving the technology waste gas that consumes and also this waste gas fed blast pipe, wherein this blast pipe has the choke valve of the air pressure in the control chamber 106.Blast pipe 172 connects one or more exhaust pumps 218.Gas extraction system 210 also can comprise the exhaust-gas treatment system (not shown) to remove the bad air of discharge.
Utilize gas exciter 208 to excite process gas to handle substrate 25, this gas exciter 208 makes energy coupling technique gas in the treatment region of chamber 106 or in the remote locations (not shown) from chamber 106 upstreams.Mean activation or excite process gas to form one or more gases that dissociate, the non-gas that dissociates, ionized gas and neutral gas by " exciting process gas ".In one embodiment, gas exciter 208 comprises antenna 186, and this antenna 186 comprises one or more conductive coils 188, and one or more conductive coils 188 can be around the central circular symmetry of chamber 106.Usually, antenna 186 comprises having 1 solenoid to about 20 circles, and this spiral has the central shaft that overlaps with the longitudinal axis that extends through processing chamber 106.Select solenoidal suitable arrangement strong induction flux connection to be provided and to be coupled with process gas.When antenna 186 was arranged at 130 places, top of adjacent chamber 106, the adjacent part on top 130 can be made of the dielectric material such as silicon dioxide, and this dielectric material can see through radio frequency (RF) field or electromagnetic field.Antenna 186 is provided power and is adjusted the power that applies by RF matching network 192 by antenna current source (not shown).For example, the antenna current source provides RF power to the frequency of about 60MHz to antenna 186 at about 50KHz, perhaps more typical about 13.56MHz; And power stage is about 100 to about 5000 watts.
When antenna 186 was used for chamber 106, wall 118 comprised top 130, but described top 130 is formed by the induction field permeable material such as aluminium oxide or silicon dioxide, to allow inductive energy from antenna 186 through wall 118 or to push up 130.The silicon of the semi-conducting material that is fit to for mixing.For the Si semiconductor top of mixing, the temperature on top 130 preferably remains in the scope, when this temperature this material have characteristic of semiconductor and wherein the carrier concentration relative temperature be constant substantially.For the silicon that mixes, temperature range can be from about 100K (beginning to have dielectric property at the following silicon of about 100K) to about 600K (beginning to have metallic conduction character at the above silicon of about 600K).
In one embodiment, but gas exciter 208 still capacitive couplings the plasma threshold energy to be provided to process gas or kinetic energy to be passed to the pair of electrodes (not shown) of the gas that excites.Usually, electrode is being arranged in the support 90 below the substrate 25 and another electrode is wall, for example the sidewall 128 of chamber 106 or push up 130.For example, the top 130 of the semiconductor formation of conduction forms electric field with biased or ground connection in chamber 106 thereby electrode can be served as reasons fully, provides Low ESR to the RF induction field by the antenna emission that is positioned at 130 tops, top simultaneously.When the semiconductor that is fit to is included in room temperature less than the doped silicon of the resistivity of about 500 Ω-cm.Usually, can apply electrical bias with respect to another electrode to electrode by the grid bias power supply (not shown), the RF bias voltage is offered electrode to this grid bias power supply so that electrode capacitive coupling each other.The RF voltage that utilizes 202 pairs of RF matching networks to apply is mediated.The RF bias voltage can have about 50kHz to the frequency of about 60MHz or about 13.56MHz, and the power stage of RF bias current is generally about 50 to about 3000 watts.
Data-signal by controller 300 receptions and evaluation can be sent to the factory automation main frame, the factory automation main frame comprises main software program, main software program calculates from different system, platform or chamber 106 and the many batches of substrates 25 or the data in the time cycle that prolongs, to determine following process control parameter, (i) technology of carrying out at substrate; The (ii) characteristic that on independent substrate, changes with statistical relationship; Or the characteristic that (iii) on single batch of substrate, changes with statistical relationship.Main software program also can utilize for ongoing in-situ process amplitude or for the data of controlling other technological parameters.The main software program that is fit to comprises can be from the WORKSTREAMTM software of above-described Applied Materials (Applied Materials) purchase.The factory automation main frame with (i) for example also can be used for providing command signal, if the characteristic of substrate is underproof or not in the value scope that statistics is determined, perhaps technological parameter has departed from acceptable scope, and specific substrate 25 is removed from etching work procedure; (ii) in specific chamber 106, stopping etching, perhaps (iii) when definite unaccommodated substrate 25 characteristics or technological parameter, the adjusting process condition.The automatic main frame of factory also can respond by the data assignment of main software program command signal is provided in the beginning of etch substrate or when finishing.
In one embodiment, controller 300 comprises computer-readable computer program and can be stored in the memory, for example on the non-movably storage medium or on storage medium movably.This computer program generally comprises processing controls software, and this software comprises program code with the parts of operation chamber 106 and described chamber 106, handles monitoring software to monitor the technology of just carrying out in chamber 106, security system software and other control software.Computer program can be arbitrarily such as the traditional program language compilation of for example assembler language, C++, Pascal or Fortran.Utilize traditional text editor to make suitable program code import single file or a plurality of file and be stored in or be described on the spendable memory media of computer.If the code text of input is high-level language, code is compiled, then then the compiler code of gained is connected with the object code of precompiler library routine.In order to carry out object code that connect, compiling, user's invocation target code reads CPU and carries out the task of this code to identify in the executive program.
In operation, for example, the user utilizes data input device according to menu or screen by the generation of processing selecting device on the display, with technology setting and chamber mark input computer program.Computer program comprises the instruction set of control substrate location, air-flow, air pressure, temperature, RF power stage and other parameters of concrete technology, and the instruction set that monitors processing chamber.Technology is set to carry out the necessary default technological parameter group of concrete technology.Technological parameter is process conditions, comprises being not limited to gas componant, airflow rate, temperature, air pressure and exciting setting such as the gas of RF or microwave power level.When having one to overlap interconnected chamber at platform, the chamber mark is represented the identity of concrete chamber.
The technology sequencer comprises from the reception chamber mark of computer program or process choice device and technological parameter group and controls its operational order collection.The technology sequencer begins to carry out the technology setting by the chamber manager of concrete technological parameter being passed to a plurality of tasks of control in chamber 106.The chamber manager can comprise instruction set, such as for example, and substrate location instruction set, air-flow control command collection, air pressure control command collection, temperature control instruction collection, gas exciter control command collection and technology monitor command collection.Though each instruction set is described as for the independent instruction collection of carrying out a group task, each instruction set can make up or can be overlapping mutually; Therefore, chamber controller 300 as herein described and readable program should not be limited to the concrete scheme of concrete function program as herein described.
The substrate location instruction set comprises the code for the control chamber chamber component, and chamber part is positioned over substrate 25 on the substrate support 20, and alternatively, the height of in chamber, substrate 25 liftings extremely being expected.For example, the substrate location instruction set can comprise the code for operate conveyors tool hand (not shown), this manipulator is sent to substrate in the chamber, the code that is used for control elevating lever (not shown), this elevating lever extends through the hole in the electrostatic chuck, and the code of adjusting the motion of manipulator for the motion that utilizes elevating lever.
Program code also comprises the temperature control instruction collection, to arrange and to control the temperature of the zones of different that maintains substrate 25 by first and second heater coils 50 in the ceramic disk 24 that for example different power stages is applied to independently chuck 20,52.The temperature control instruction collection is also regulated the hot transmission airflow by pipeline 38a, 38b.
The temperature control instruction collection comprises that also control is by the temperature of the cooling agent of the coolant channel 110 of base 91 and the instruction of flow velocity.In one embodiment, the temperature control instruction collection comprises code in order to before rising in the power stage that imposes on heater, at least about a second, makes the coolant temperature in the cooler be increased to high value from what begin than low value immediately.This can circulate the cooling agent of higher temperature and flow into the heat of base 91 to reduce from ceramic disk 24 when heater finally heats up in the coolant channel of base 91 before heater heats up, thereby improve the underlayer temperature climbing speed effectively.On the contrary, program code comprises the instruction set that reduces coolant temperature, for example to 10 ℃ of major general's cooling agent reductions and before the power stage decline that imposes on heater cooler is reduced to than low value to accelerate the speed from the substrate transfer of heat when underlayer temperature descends.Among Fig. 7 the curve description of temperature and time remain under 5 ℃ of situations substrate from 45 ℃ of rate temperature changes that rise to 75 ℃ at the cooling agent base.Fig. 9 is by fixing and the temperature changing curve diagram that heat is passed to the electrostatic chuck of substrate has been described the quick change of underlayer temperature.Keep the temperature identical with electrostatic chuck by the helium air pressure substrate that utilizes the back side.How the temperature that the figure shows electrostatic chuck in the time period of giving rises and descends.Fast rise and the decline of temperature is represented on two abrupt slopes 291,293 among the figure respectively.Electrostatic chuck so temperature change fast makes the rapid change of underlayer temperature, therefore can etching such as polysilicon (Poly-Si) and the previous incompatible material of WSIX.
Process feedback control command collection can be used as the FEEDBACK CONTROL circulation between the temperature monitoring instruction set, the temperature monitoring instruction set receives the temperature signal from optic temperature sensor 60a, 60b, thereby adjusts the power that is applied to such as heater coil 50,52 chamber part, the hot transmission airflow by pipeline 38a, 38b, the liquid stream of the passage 110 by base 91 and the temperature of cooler cooling agent.
Air-flow control command collection comprises the code for the flow velocity of control different process gas componant.For example, air-flow control command collection can be adjusted the expection airflow rate of opening size to obtain to enter chamber 106 from gas conduit 203 of control damper 158.In one embodiment, thus air-flow control command collection comprises code arranges first process gas to the volumetric flow rate ratio of the expection of second process gas with second volumetric flow rate of first volumetric flow rate that first gas is set and second gas in process gas is formed.
Air pressure control command collection comprises the program code for the air pressure of the ON/OFF Position Control chamber 106 that passes through adjustment choke valve 174.The temperature control instruction collection can comprise, for example is used for the code of the temperature of control substrate 25 during etching or is used for the temperature of the wall of control chamber 106, such as the code of the temperature on control top.Gas exciter control command collection comprises for the code that the RF power stage that for example is applied to electrode or antenna 186 is set.
Instruction set is used for carrying out a group task though be described as independently, is to be understood that each instruction set can make up mutually, and perhaps the task of batch processing code can make up to carry out required task groups mutually with another task of organizing program code.Therefore, controller 300 as herein described and computer program should not be limited to the function program of specific embodiment as herein described; And other random procedure groups of the function group that execution is equal to or the program code of combination are also within the scope of the invention.In addition, though controller is described with reference to the embodiment of chamber 106, it also can be used for any chamber as herein described.
Equipment of the present invention and technology have remarkable advantages by allowing underlayer temperature between the different process step that substrate and chamber are carried out to change fast.This temperature change fast improves the speed of the etch process with executable a plurality of steps.System of the present invention can also accurately reproduce the required temperature of special process and rise and descend, such as the etch process with a plurality of etch phase, described etch process need be on substrate different material or the layers of etching.Another advantage is that equipment of the present invention allows to make substrate temperature to remain on apparently higher than the temperature of cooling agent base, and this is applied in higher plasma power on the substrate under the situation without any the underlayer temperature drift in permission during the technology conversely.The big temperature difference also allows to exist between substrate interior district and the outside area the good temperature difference between substrate and the cooling agent base, thereby the annular process conditions that change are gone up on compensation lining surface.
Though the present invention describes in detail with reference to the preferred embodiments of the present invention, other embodiment also are feasible.For example, be not limited to described hereinly, can be used for other chambers and other technology such as the equipment unit of substrate support, cooling agent base and temperature sensor.Therefore, appended claim should not be limited to the description of the preferred embodiment that this paper comprises.
Claims (11)
1. an energy is fixed the also substrate support assembly of heated substrate in processing chamber, and this assembly comprises:
(a) ceramic disk, described ceramic disk comprises (i) substrate receiving surface, (ii) core and periphery, the (iii) relative back side, (iv) be embedded in the electrode in the described ceramic disk, fix the substrate that is placed on the described substrate receiving surface to produce electrostatic force, and (v) be embedded in the described ceramic disk with the heater of heated substrate, described heater comprises first heater coil of the described central part office that is positioned at described ceramic disk;
(b) the cooling agent base comprises coolant channel, is used at described coolant channel circulating coolant, and described coolant channel comprises entrance and terminal; And
(c) flexible layer makes described ceramic disk mutually bonding with described cooling agent base,
Cooperate to allow the described core of described ceramic disk and the independent of temperature of described periphery are controlled comprising the described heater of first heater coil and second heater coil, described cooling agent base and described flexible layer, and can make described underlayer temperature fast rise and decline.
2. bracket component according to claim 1 is characterized in that, the described entrance of described coolant channel and terminal coolant channel self adjacent one another are and described becomes the loop.
3. bracket component according to claim 2, it is characterized in that, the described relative back side of described ceramic disk comprises the table top of a plurality of separations, has first table top adjacent with the entrance of described coolant channel and away from second table top of the entrance of described coolant channel, and wherein:
(i) described first table top separates with first distance, and described first distance is greater than the second distance between described second table top; Perhaps
(ii) described first table top has first contact area, and this first contact area is less than second contact area of described second table top.
4. bracket component according to claim 1 is characterized in that, described ceramic disk comprises the thickness less than about 7mm.
5. bracket component according to claim 1 is characterized in that, described ceramic disk comprises the thickness from about 4mm to about 7mm.
6. bracket component according to claim 1 is characterized in that, described ceramic disk is made up of aluminium oxide.
7. bracket component according to claim 1 is characterized in that, described electrode and heater each comprise tungsten or molybdenum any one.
8. bracket component according to claim 1 is characterized in that, described first heater coil and described second heater coil radially arrange at interval and concentrically with respect to one another.
9. bracket component according to claim 1 is characterized in that, described first heater coil and described second heater coil have the all-in resistance less than 10Ohm.
10. bracket component according to claim 1 is characterized in that, described first heater coil comprises first loop with first separating distance, and described second heater coil comprises second loop of separating with greater than the second distance of described first distance.
11. bracket component according to claim 10 is characterized in that, the hole that centers on the elevating lever in the described ceramic disk arranges described second loop.
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| US83254506P | 2006-07-20 | 2006-07-20 | |
| US60/832,545 | 2006-07-20 |
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| KR (1) | KR101532906B1 (en) |
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- 2006-12-18 KR KR1020060129235A patent/KR101532906B1/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| JP5183058B2 (en) | 2013-04-17 |
| KR20080008933A (en) | 2008-01-24 |
| TW200807560A (en) | 2008-02-01 |
| JP2008028354A (en) | 2008-02-07 |
| KR101532906B1 (en) | 2015-07-01 |
| TWI373810B (en) | 2012-10-01 |
| CN101110381A (en) | 2008-01-23 |
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