CN101899650A - Substrate heating furnace of MOCVD - Google Patents
Substrate heating furnace of MOCVD Download PDFInfo
- Publication number
- CN101899650A CN101899650A CN 201010160219 CN201010160219A CN101899650A CN 101899650 A CN101899650 A CN 101899650A CN 201010160219 CN201010160219 CN 201010160219 CN 201010160219 A CN201010160219 A CN 201010160219A CN 101899650 A CN101899650 A CN 101899650A
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- Prior art keywords
- heater
- heating furnace
- mocvd
- substrate heating
- heating
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 40
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910001120 nichrome Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 239000012774 insulation material Substances 0.000 claims description 3
- 239000003870 refractory metal Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000009827 uniform distribution Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 3
- 239000011810 insulating material Substances 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 2
- 238000005485 electric heating Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 206010010774 Constipation Diseases 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000012913 prioritisation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The invention discloses a substrate heating furnace of an MOCVD, which comprises a furnace body, heating resistance wires and an electrode, and is characterized in that the furnace body has a cylindrical structure and is arranged on a high-temperature-resistant insulation clapboard in a spanning way; the furnace body is internally penetrated with a plurality of groups of heating resistance wires which are evenly distributed in a plane or distributed in a three-dimensional way in a plurality of planes; a ring-shaped outer wall of the furnace body is provided with a thermal shielding layer; and the electrode used for externally connecting a power supply is positioned at the lower side of the insulation clapboard. By applying the heating furnace, the power density and the maximum heating temperature under vacuum constant pressure of the electric heating furnace are improved; the temperature distribution is more accurately adjusted, so that the aim of evenly heating can be achieved; furthermore, the thermal shielding layer is formed by adopting a metal sheet and insulating material for separating, so that the temperature gradient of the edge of a circular surface of the furnace body is reduced, a constant temperature area of the heating furnace can be formed, and the temperature is rapidly reduced after power failure.
Description
Technical field
The present invention relates to a kind of industrial processes electrothermal oven, relate in particular to a kind of substrate heating furnace that metal-organic chemical vapor deposition equipment prepares semi-conductor chip or other unicircuit that is used for.
Background technology
MOCVD is the english abbreviation of organometallics chemical vapor deposition (Metal-organic Chemieal VaporDePosition).MOCVD is a kind of novel vapor phase epitaxial growth technology that grows up on the basis of vapor phase epitaxial growth (VPE).It with hydride of the organic compound of III family, II family element and V, VI family element etc. as the crystal growth source material, in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.Usually the crystal growth in the MOCVD system all is at normal pressure or the down logical H of low pressure (10-100Torr)
2Cold wall quartz (stainless steel) reaction chamber in carry out, underlayer temperature is 500-1200 ℃, heats graphite base (substrate base is above graphite base), H with radio-frequency induction
2Fluid supply bubbling by Controllable Temperature carries metallorganics to the vitellarium.
This requisite integral part of MOCVD system comprises source supply system, gas transport system, reaction chamber and heating system, exhaust treatment system and safeguard protection and warning.Heating system part wherein, traditional heating stove heat temperature raising homogeneity slow, Heating temperature be cannot say for sure card, and operation often has problem and is difficult for long-play under hot conditions.This mainly is because many-side such as the resistance heating material of process furnace selects and layout is unreasonable, the global design structure of stove and subregion control have problems causes.Therefore, for adapting to the requirement of MOCVD epitaxy monocrystal thin films, it is imperative to improve heating system.
Summary of the invention
In view of the defective that above-mentioned prior art exists, the objective of the invention is to propose the substrate heating furnace of a kind of MOCVD of being used for, be the heating system ecotopia that MOCVD technology provides a kind of homogeneous heating, heat-up rate is fast, thermal capacity is little, cooling is fast.
Purpose of the present invention will be achieved by the following technical programs:
A kind of substrate heating furnace that is used for MOCVD, comprise body of heater, resistive heater and electrode, it is characterized in that: described body of heater is a cylindrical-shaped structure, be set up on the resistant to elevated temperatures insulating barrier, be equipped with one group of above resistive heater in the body of heater, and the ring-type outer wall of described body of heater is provided with thermal shield, and the insulating barrier downside is provided with the electrode that is used for external source.
Further, above-mentioned a kind of substrate heating furnace that is used for MOCVD, wherein should many group resistive heaters along body of heater disc uniform distribution ringwise.
Further, be equipped with four groups of resistive heaters on the above-mentioned same body of heater disc, wherein one group of resistive heater wears at interval and is centered around body of heater disc outmost turns, and in addition three groups of resistive heaters are the diameter shape ring ring that successively decreases and are placed in body of heater disc center mutually; Or wherein three groups of heating nichrome wire to be the hexagonal angle degree respectively arranged evenly, middlely be curved repeatedly a plurality of " C " shape lasso of another group nichrome wire around formation.
Further, above-mentioned a kind of substrate heating furnace that is used for MOCVD, wherein how the group resistive heaters are along the equally distributed ringwise while of body of heater disc, distribute along body of heater is axially three-dimensional, and should the solid distribution can also be that solid is dislocatedly distributed.
Further, above-mentioned a kind of substrate heating furnace that is used for MOCVD, the wherein multilayered structure of this thermal shield for being stacked to constitute by refractory metal plate and high-temperature insulation material.
After process furnace of the present invention was able to application implementation, its outstanding effect was:
Electrothermal oven structure of the present invention has improved the power density of electrothermal oven and the maximum heating temperature under the vacuum normal pressure on the one hand; Adopt the layout of many group resistive heaters, attemperation distributes more meticulously, reaches the purpose of homogeneous heating; And adopt metal sheet and insulating material to form thermal shield at interval, reduced the thermograde at body of heater disc edge, make process furnace form the flat-temperature zone, and cooling rapidly after outage.
Description of drawings
Fig. 1 is that the axle of process furnace of the present invention cuts open structural representation;
Fig. 2 is the structural representation of a preferred embodiment of process furnace resistance wire installation of the present invention;
Fig. 3 is the structural representation of another embodiment of process furnace resistance wire installation of the present invention.
Embodiment
Following constipation closes the embodiment accompanying drawing, the specific embodiment of the present invention is described in further detail, so that technical solution of the present invention is easier to understand, grasp.
As shown in Figure 1, be that the axle of process furnace of the present invention cuts open structural representation.Can clearly be seen that from shown in the figure: this is used for the substrate heating furnace of MOCVD, resistance heating material, body of heater 2, thermal shield 3, insulating barrier 4, electrode 5 parts such as grade constitute, wherein this resistance heating material is mainly resistive heater 1, this body of heater 2 is cylindric, be set up on the resistant to elevated temperatures insulating barrier 4, be equipped with one group of above resistive heater 1 in each disc of body of heater 2, this body of heater disc that is provided with resistive heater 1 can be the individual layer distributed architecture, also can be the three-dimensional arrangement that distributes along the axial multilayer of body of heater, and more can be the three-dimensional arrangement that multilayer is dislocatedly distributed.
In addition, the ring-type outer wall of this body of heater 2 is provided with thermal shield 3, and the multilayered structure of this thermal shield 3 for being stacked to constitute by refractory metal plate and high-temperature insulation material, and uncovered up and down help rapid temperature rise and drop.And these insulating barrier 4 downsides are provided with electrode 5 or its extraction electrode 6 that is used for external source, and electrode is fixed on the insulating material, and fixed form is to connect by the insulation permanent sleeve.
Be the basic structure that the present invention is used for the substrate heating furnace of MOCVD more than, it also can have further prioritization scheme:
As shown in Figures 2 and 3, be the distributed architecture synoptic diagram of process furnace of the present invention resistive heater on arbitrary body of heater disc.Though two kinds of embodiments are and wear four groups of resistive heaters on same body of heater discs.But the difference of distribution mode specifically: the former is that wherein one group of resistive heater wears at interval and is centered around body of heater disc outmost turns, and three groups of resistive heaters are the diameter shape ring ring that successively decreases and are placed in body of heater disc center mutually in addition; And the latter be wherein three groups of heating nichrome wire to be the hexagonal angle degree respectively arranged evenly, middlely be curved repeatedly a plurality of " C " shape lasso of another group nichrome wire around formation.No matter adopt any distributed architecture, all be equal to and obtain making on the body of heater disc uniform distribution resistance heating wire's effect ringwise.
Claims (7)
1. substrate heating furnace that is used for MOCVD, comprise body of heater, resistive heater and electrode, it is characterized in that: described body of heater is a cylindrical-shaped structure, be set up on the resistant to elevated temperatures insulating barrier, be equipped with one group of above resistive heater in the body of heater, and the ring-type outer wall of described body of heater is provided with thermal shield, and is provided with the electrode that is used for external source at the insulating barrier downside.
2. a kind of substrate heating furnace that is used for MOCVD according to claim 1 is characterized in that: described one group of above resistive heater is along body of heater disc uniform distribution ringwise.
3. a kind of substrate heating furnace that is used for MOCVD according to claim 2, it is characterized in that: be equipped with four groups of resistive heaters on the described same body of heater disc, wherein one group of resistive heater wears at interval and is centered around body of heater disc outmost turns, and in addition three groups of resistive heaters are the diameter shape ring ring that successively decreases and are placed in body of heater disc center mutually.
4. a kind of substrate heating furnace that is used for MOCVD according to claim 2, it is characterized in that: be equipped with four groups of resistive heaters on former of the described same body of heater, wherein to be the hexagonal angle degree respectively arranged evenly for three groups of heating nichrome wire, middlely is curved repeatedly a plurality of " C " shape lasso around formation of another group nichrome wire.
5. a kind of substrate heating furnace that is used for MOCVD according to claim 1 is characterized in that: described one group of above resistive heater distributed along body of heater is axially three-dimensional along the equally distributed ringwise while of body of heater disc.
6. will remove the substrate heating furnace of 5 described a kind of MOCVD of being used for according to right, it is characterized in that: described one group of above resistive heater axially is solid along body of heater and is dislocatedly distributed.
7. a kind of substrate heating furnace that is used for MOCVD according to claim 1 is characterized in that: the multilayered structure of described thermal shield for being stacked to constitute by refractory metal plate and high-temperature insulation material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010160219 CN101899650A (en) | 2010-04-30 | 2010-04-30 | Substrate heating furnace of MOCVD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010160219 CN101899650A (en) | 2010-04-30 | 2010-04-30 | Substrate heating furnace of MOCVD |
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| Publication Number | Publication Date |
|---|---|
| CN101899650A true CN101899650A (en) | 2010-12-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010160219 Pending CN101899650A (en) | 2010-04-30 | 2010-04-30 | Substrate heating furnace of MOCVD |
Country Status (1)
| Country | Link |
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| CN (1) | CN101899650A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103898477A (en) * | 2012-12-26 | 2014-07-02 | 光达光电设备科技（嘉兴）有限公司 | Substrate supporting seat |
| CN108406505A (en) * | 2018-03-30 | 2018-08-17 | 马鞍山市江南光学有限公司 | A kind of processing method and its hot glue loading device of rhombic prism |
| CN110025056A (en) * | 2019-05-31 | 2019-07-19 | 合肥微纳传感技术有限公司 | Three-dimensional heating MEMS atomizer for electronic cigarette |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1563477A (en) * | 2004-04-20 | 2005-01-12 | 南昌大学 | Heating unit in use for metal-organic chemical vapor deposition system |
| CN1657650A (en) * | 2004-12-21 | 2005-08-24 | 中国科学技术大学 | Connected multi-chamber high temperature organometallic chemical vapor deposition device |
| CN2756644Y (en) * | 2004-12-21 | 2006-02-08 | 中国科学技术大学 | Intercommunication type multiple reaction room high temperature organic metal chemical gas phase depositing device |
| CN2818496Y (en) * | 2005-04-20 | 2006-09-20 | 辽宁聚智科技发展有限公司 | Fast heater |
| CN1949941A (en) * | 2005-10-11 | 2007-04-18 | 中国科学院物理研究所 | Substrate heater for laser molecular beam epitaxial device |
| CN101110381A (en) * | 2006-07-20 | 2008-01-23 | 应用材料股份有限公司 | Substrate processing with rapid temperature gradient control |
| CN201158704Y (en) * | 2008-01-11 | 2008-12-03 | 中国科学院沈阳科学仪器研制中心有限公司 | Substrate warming frame for vacuum plating |
| CN201670873U (en) * | 2010-04-30 | 2010-12-15 | 苏州索乐机电设备有限公司 | Substrate heating furnace for MOCVD |
-
2010
- 2010-04-30 CN CN 201010160219 patent/CN101899650A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1563477A (en) * | 2004-04-20 | 2005-01-12 | 南昌大学 | Heating unit in use for metal-organic chemical vapor deposition system |
| CN1657650A (en) * | 2004-12-21 | 2005-08-24 | 中国科学技术大学 | Connected multi-chamber high temperature organometallic chemical vapor deposition device |
| CN2756644Y (en) * | 2004-12-21 | 2006-02-08 | 中国科学技术大学 | Intercommunication type multiple reaction room high temperature organic metal chemical gas phase depositing device |
| CN2818496Y (en) * | 2005-04-20 | 2006-09-20 | 辽宁聚智科技发展有限公司 | Fast heater |
| CN1949941A (en) * | 2005-10-11 | 2007-04-18 | 中国科学院物理研究所 | Substrate heater for laser molecular beam epitaxial device |
| CN101110381A (en) * | 2006-07-20 | 2008-01-23 | 应用材料股份有限公司 | Substrate processing with rapid temperature gradient control |
| CN201158704Y (en) * | 2008-01-11 | 2008-12-03 | 中国科学院沈阳科学仪器研制中心有限公司 | Substrate warming frame for vacuum plating |
| CN201670873U (en) * | 2010-04-30 | 2010-12-15 | 苏州索乐机电设备有限公司 | Substrate heating furnace for MOCVD |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103898477A (en) * | 2012-12-26 | 2014-07-02 | 光达光电设备科技（嘉兴）有限公司 | Substrate supporting seat |
| CN108406505A (en) * | 2018-03-30 | 2018-08-17 | 马鞍山市江南光学有限公司 | A kind of processing method and its hot glue loading device of rhombic prism |
| CN110025056A (en) * | 2019-05-31 | 2019-07-19 | 合肥微纳传感技术有限公司 | Three-dimensional heating MEMS atomizer for electronic cigarette |
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Open date: 20101201 |