[go: up one dir, main page]

CN100549772C - LCD and method of testing thereof - Google Patents

LCD and method of testing thereof Download PDF

Info

Publication number
CN100549772C
CN100549772C CNB2006100576488A CN200610057648A CN100549772C CN 100549772 C CN100549772 C CN 100549772C CN B2006100576488 A CNB2006100576488 A CN B2006100576488A CN 200610057648 A CN200610057648 A CN 200610057648A CN 100549772 C CN100549772 C CN 100549772C
Authority
CN
China
Prior art keywords
gate
data
sub
pixel electrode
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006100576488A
Other languages
Chinese (zh)
Other versions
CN1825176A (en
Inventor
金东奎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1825176A publication Critical patent/CN1825176A/en
Application granted granted Critical
Publication of CN100549772C publication Critical patent/CN100549772C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V17/00Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
    • F21V17/002Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages with provision for interchangeability, i.e. component parts being especially adapted to be replaced by another part with the same or a different function
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V17/00Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
    • F21V17/10Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening
    • F21V17/12Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening by screwing

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)

Abstract

本发明提供了一种液晶显示器,其包括多个像素电极,该像素电极呈矩阵排列并且具有大小彼此不同的第一子像素和第二子像素。第一开关元件和第二开关元件分别连接至所述第一子像素电极和第二子像素电极。第一栅极线和第二栅极线分别连接至第一开关元件和第二开关元件。数据线连接至第一开关元件和第二开关元件,以传输数据电压。第一栅极短路棒和第二栅极短路棒分别连接至第一栅极线和第二栅极线。将连接至各个子像素的栅极线连接至两个或者四个栅极短路棒,以进行阵列测试和视觉检测测试,由此以简便的方法检测各个相邻子像素电极之间的电桥。

Figure 200610057648

The present invention provides a liquid crystal display, which includes a plurality of pixel electrodes arranged in a matrix and having first sub-pixels and second sub-pixels with different sizes from each other. A first switching element and a second switching element are respectively connected to the first sub-pixel electrode and the second sub-pixel electrode. The first gate line and the second gate line are respectively connected to the first switching element and the second switching element. The data line is connected to the first switching element and the second switching element to transmit data voltage. The first gate short bar and the second gate short bar are respectively connected to the first gate line and the second gate line. The gate line connected to each sub-pixel is connected to two or four gate shorting bars for array test and visual inspection test, thereby detecting the electric bridge between electrodes of each adjacent sub-pixel in a simple way.

Figure 200610057648

Description

液晶显示器及其测试方法 Liquid crystal display and its test method

本申请要求2005年2月22日提交的韩国专利申请第2005-0014578号以及2005年6月2日提交的韩国专利申请第2005-0047262号的优先权,其全部内容结合于此作为参考。This application claims the benefit of Korean Patent Application No. 2005-0014578 filed on February 22, 2005 and Korean Patent Application No. 2005-0047262 filed on June 2, 2005, the entire contents of which are hereby incorporated by reference.

技术领域 technical field

本发明涉及一种液晶显示器,以及一种该液晶显示器的测试方法。更具体地,本发明涉及一种液晶显示器及其测试方法,该方法可很容易地检测出液晶显示器的子像素电极之间以及数据线之间形成的电桥。The invention relates to a liquid crystal display and a testing method of the liquid crystal display. More specifically, the present invention relates to a liquid crystal display and a testing method thereof, which can easily detect electric bridges formed between sub-pixel electrodes and data lines of the liquid crystal display.

背景技术 Background technique

液晶显示器(“LCD”)是一种被广泛应用的平板显示装置,其包括在其上安装有诸如像素电极和共电极的场致电极的两个显示面板以及夹置在电极之间的液晶层。LCD通过向场致电极施加电压来在LC层中产生电场,并且排列液晶层中的液晶分子,以调节射入的光的极化,从而显示想要得到的图像。A liquid crystal display ("LCD") is a widely used flat-panel display device that includes two display panels on which field-induced electrodes such as pixel electrodes and common electrodes are mounted, and a liquid crystal layer interposed between the electrodes. . The LCD generates an electric field in the LC layer by applying a voltage to the field-generating electrodes, and aligns liquid crystal molecules in the liquid crystal layer to adjust the polarization of incident light, thereby displaying desired images.

应该进行各种测试,以检测LCD制造过程中的断线或短路,例如开路/短路(“OS”)测试、阵列测试、视觉检测测试(“VI”)、粗测试(gross test)以及模块测试。Various tests should be performed to detect wire breaks or shorts during LCD manufacturing, such as open/short (“OS”) testing, array testing, visual inspection testing (“VI”), gross testing, and module testing .

在制造薄膜晶体管(“TFT”)的工艺过程中,LCD中的第一面板上的源电极和漏电极彼此分离时,进行OS测试,通过施加预定电压来检测信号线的断线或者TFT的短路。在将素玻璃(motherglass)分成多个单元之前,进行阵列测试,以通过施加预定电压并识别存在或不存在输出电压,来检测显示信号线的断线。将素玻璃分成多个单元并且将上部面板与下部面板彼此组合之后,进行VI测试,以通过施加预定电压从视觉上检测显示信号线的断线。在安装驱动电路之前,进行粗测试,以通过施加与实际驱动电压相同的电压并识别显示屏幕的状态来检测显示图像的质量和显示信号线的断线。在安装驱动电路之后,进行模块测试,以最终检测驱动电路的最佳运转。During the process of manufacturing a thin film transistor ("TFT"), when the source electrode and the drain electrode on the first panel in the LCD are separated from each other, an OS test is performed to detect a disconnection of a signal line or a short circuit of a TFT by applying a predetermined voltage . Before the motherglass is divided into a plurality of cells, an array test is performed to detect a disconnection of a display signal line by applying a predetermined voltage and identifying the presence or absence of an output voltage. After dividing the plain glass into a plurality of units and combining the upper panel and the lower panel with each other, a VI test is performed to visually detect a disconnection of a display signal line by applying a predetermined voltage. Before installing the driving circuit, conduct a rough test to detect the quality of the display image and the disconnection of the display signal line by applying the same voltage as the actual driving voltage and identifying the state of the display screen. After the driver circuit is installed, a module test is performed to finally check the optimal operation of the driver circuit.

垂直定向(“VA”)模式的LCD是在没有施加电场的情况下液晶分子定向(director)垂直于上部面板和下部面板的LCD,其提供了高对比度和宽基准视角。基准视角是指具有1∶10对比度的视角或者中间灰度亮度反转临界角。A vertical alignment ("VA") mode LCD is an LCD in which liquid crystal molecules are oriented vertically to upper and lower panels without an applied electric field, which provides high contrast and a wide reference viewing angle. The reference viewing angle refers to a viewing angle with a contrast ratio of 1:10 or a critical angle for luminance inversion of a middle gray scale.

根据VA模式的LCD,可在场致电极上形成切口或突起,以实现宽视角。由于倾斜的液晶分子的方向由切口或突起确定,所以使液晶分子的倾斜方向不同,由此使基准视角变宽。According to a VA mode LCD, cutouts or protrusions may be formed on the field electrodes to realize a wide viewing angle. Since the directions of the inclined liquid crystal molecules are determined by the cutouts or protrusions, the inclined directions of the liquid crystal molecules are made different, thereby widening the reference viewing angle.

然而,与其前面的可视性相比,VA模式LCD在其侧面具有很差的可视性。例如,在具有切口的图案化(patterned)垂直定向(“PVA”)模式LCD的情况下,其亮度在到达其边侧面时增强,严重的时候,消除了高灰度之间的亮度差,从而显示图像可能出现失真。However, a VA mode LCD has poor visibility on its side compared to its front visibility. For example, in the case of a patterned vertical orientation ("PVA") mode LCD with cutouts, its brightness is enhanced as it reaches its sides, and in severe cases, the brightness difference between high gray levels is eliminated, thereby The displayed image may appear distorted.

为了增强边侧面的可视性,已经提出应该将每个像素分成两个子像素,同时每个像素中的子像素接收不同的电压。然而,在LCD的制造工艺的过程中当将子像素的电极被图案化时,可能形成电桥,从而该电桥将子像素电极或者相邻的数据线互连。从电路的角度观察,这意味着那些电极或数据线彼此短路。由此,将相同的电压,而不是不同的电压施加给各个子像素,从而,降低了显示图像的质量。In order to enhance the visibility of the sides, it has been proposed that each pixel should be divided into two sub-pixels, while the sub-pixels in each pixel receive different voltages. However, when the electrodes of the sub-pixels are patterned during the manufacturing process of the LCD, a bridge may be formed so that the bridges interconnect the sub-pixel electrodes or adjacent data lines. From a circuit point of view, this means that those electrodes or data lines are shorted to each other. Therefore, the same voltage is applied to each sub-pixel instead of different voltages, thereby degrading the quality of the displayed image.

发明内容 Contents of the invention

当电极或数据线通过连接而短路时,应该通过进行各种测试检测出形成的电桥。因此,本发明提供了一种液晶显示器(“LCD”)以及一种LCD的测试方法,该方法可很容易地检测出子像素电极之间以及数据线之间形成的电桥。When electrodes or data lines are shorted by connections, the bridge formed should be detected by conducting various tests. Accordingly, the present invention provides a liquid crystal display ("LCD") and a method for testing an LCD that can easily detect bridges formed between sub-pixel electrodes and data lines.

本发明提供一种具有下列特征的LCD及其测试方法。The present invention provides an LCD having the following characteristics and a testing method thereof.

根据本发明的示例性实施例,LCD包括多个呈矩阵排列的像素电极,每个像素电极均具有尺寸不同的第一子像素和第二子像素;以及分别连接至第一子像素电极和第二子像素电极的第一开关元件和第二开关元件。第一栅极线和第二栅极线分别连接至第一开关元件和第二开关元件。数据线连接至第一开关元件和第二开关元件并传输数据电压。第一栅极短路棒和第二栅极短路棒分别连接至第一栅极线和第二栅极线。According to an exemplary embodiment of the present invention, the LCD includes a plurality of pixel electrodes arranged in a matrix, each pixel electrode has a first sub-pixel and a second sub-pixel with different sizes; and is connected to the first sub-pixel electrode and the second sub-pixel respectively. The first switch element and the second switch element of the two sub-pixel electrodes. The first gate line and the second gate line are respectively connected to the first switching element and the second switching element. The data line is connected to the first switching element and the second switching element and transmits a data voltage. The first gate short bar and the second gate short bar are respectively connected to the first gate line and the second gate line.

彼此不同的第一栅极测试信号和第二栅极测试信号可分别被施加给第一栅极短路棒与第二栅极短路棒。A first gate test signal and a second gate test signal different from each other may be applied to the first gate short bar and the second gate short bar, respectively.

正数据电压可在施加第一栅极测试信号的情况下被施加给数据线,负数据电压可在施加第二栅极测试信号的情况下被施加给数据线。Positive data voltages may be applied to the data lines in the case of applying the first gate test signal, and negative data voltages may be applied to the data lines in the case of applying the second gate test signal.

正数据电压和负数据电压可具有基本相同的大小。The positive data voltage and the negative data voltage may have substantially the same magnitude.

数据短路棒可连接至数据线,并且可以与第一栅极线和第二栅极线形成在LCD的同一层中。The data short bars may be connected to the data lines, and may be formed in the same layer of the LCD as the first and second gate lines.

屏蔽电极可与数据线重叠,并且可设置在两个相邻像素电极之间。The shielding electrode may overlap the data line, and may be disposed between two adjacent pixel electrodes.

屏蔽电极可与第一栅极线和第二栅极线中的至少一条重叠。The shield electrode may overlap at least one of the first and second gate lines.

施加给第一子像素电极和第二子像素电极的数据电压的大小可以彼此不同,并且可以从一个图像信息组中获得。The magnitudes of the data voltages applied to the first subpixel electrode and the second subpixel electrode may be different from each other, and may be obtained from one image information group.

第一子像素电极的尺寸可大于第二子像素电极的尺寸,并且施加给第一子像素电极的数据电压的大小可以小于施加给第二子像素电极的数据电压的大小。The size of the first subpixel electrode may be larger than that of the second subpixel electrode, and the magnitude of the data voltage applied to the first subpixel electrode may be smaller than the magnitude of the data voltage applied to the second subpixel electrode.

第一和第二栅极短路棒可与数据线形成在液晶显示器的同一层中,并且可基本上平行于数据线。The first and second gate short bars may be formed in the same layer of the liquid crystal display as the data lines, and may be substantially parallel to the data lines.

第一栅极短路棒和第二栅极短路棒可处于LCD显示面板边缘的外部。The first gate shorting bar and the second gate shorting bar may be outside the edge of the LCD display panel.

LCD可进一步包括分别连接至第一栅极线和第二栅极线的栅极焊盘(pad)和将栅极焊盘分别连接至第一栅极短路棒和第二栅极短路棒的栅极延伸线。The LCD may further include gate pads respectively connected to the first gate line and the second gate line, and gate pads respectively connected to the first gate shorting bar and the second gate shorting bar. pole extension line.

根据本发明的其它示例性实施例,LCD包括多个呈矩阵排列的像素电极,每个像素电极均具有彼此大小不同的第一子像素和第二子像素;以及分别连接至第一子像素和第二子像素的第一开关元件和第二开关元件。第一栅极线和第二栅极线分别连接至第一开关元件和第二开关元件。数据线连接至第一开关元件和第二开关元件并传输数据电压。第一栅极短路棒和第二栅极短路棒连接至在奇数像素行的第一栅极线和第二栅极线。第三栅极短路棒和第四栅极短路棒连接至在偶数像素行的第一栅极线和第二栅极线。According to other exemplary embodiments of the present invention, the LCD includes a plurality of pixel electrodes arranged in a matrix, each pixel electrode has a first sub-pixel and a second sub-pixel with different sizes from each other; and is connected to the first sub-pixel and the second sub-pixel respectively. The first switching element and the second switching element of the second sub-pixel. The first gate line and the second gate line are respectively connected to the first switching element and the second switching element. The data line is connected to the first switching element and the second switching element and transmits a data voltage. The first gate short bar and the second gate short bar are connected to the first gate line and the second gate line in the odd pixel row. The third gate short bar and the fourth gate short bar are connected to the first gate line and the second gate line in the even pixel rows.

第一至第四栅极测试信号可分别施加给第一至第四栅极短路棒。The first to fourth gate test signals may be respectively applied to the first to fourth gate shorting bars.

正数据电压可在施加第一栅极测试信号和第四栅极测试信号的情况下被施加给数据线,而负数据电压可在施加第二栅极测试信号和第三栅极测试信号的情况下被施加给数据线。A positive data voltage may be applied to the data line while applying the first gate test signal and a fourth gate test signal, and a negative data voltage may be applied while applying the second gate test signal and the third gate test signal. down is applied to the data lines.

根据本发明的其它示例性实施例,提供了一种LCD的测试方法,该LCD包括:多个像素电极,其具有第一子像素电极和第二子像素电极;第一开关元件和第二开关元件,分别连接至第一子像素电极和第二子像素电极;第一栅极线和第二栅极线,分别连接至第一开关元件和第二开关元件;以及连接至第一开关元件和第二开关元件的数据线。该测试方法包括:提供第一栅极短路棒和第二栅极短路棒,其分别连接至第一栅极线和第二栅极线;提供数据短路棒,其连接至数据线;向数据短路棒施加正数据电压;向第一栅极短路棒施加第一栅极测试信号,以向第一子像素电极施加正数据电压;向数据短路棒施加负电压;以及向第二栅极短路棒施加第二栅极测试信号,以向第二子像素电极施加负数据电压。According to other exemplary embodiments of the present invention, a method for testing an LCD is provided, and the LCD includes: a plurality of pixel electrodes having a first sub-pixel electrode and a second sub-pixel electrode; a first switching element and a second switch elements, respectively connected to the first sub-pixel electrode and the second sub-pixel electrode; the first gate line and the second gate line, respectively connected to the first switching element and the second switching element; and connected to the first switching element and The data line of the second switching element. The test method includes: providing a first gate shorting bar and a second gate shorting bar, which are respectively connected to the first gate line and the second gate line; providing a data shorting bar, which is connected to the data line; applying a positive data voltage to the bar; applying a first gate test signal to the first gate shorting bar to apply a positive data voltage to the first sub-pixel electrode; applying a negative voltage to the data shorting bar; and applying a negative voltage to the second gate shorting bar The second gate test signal to apply a negative data voltage to the second sub-pixel electrode.

该方法可进一步包括诸如通过进行阵列测试来检测第一子像素电极和第二子像素电极的极性。The method may further include detecting polarities of the first subpixel electrode and the second subpixel electrode, such as by performing an array test.

该方法可进一步包括识别第一子像素电极和第二子像素电极之间电桥的存在,其中,具有电桥的第一子像素电极和第二子像素电极的正像素电压与负像素电压在施加正数据电压和负数据电压的情况下无法连续地提供。The method may further include identifying the presence of a bridge between the first subpixel electrode and the second subpixel electrode, wherein the positive pixel voltage and the negative pixel voltage of the first subpixel electrode and the second subpixel electrode having the bridge are within It cannot be supplied continuously when positive data voltage and negative data voltage are applied.

该方法可进一步包括诸如通过进行视觉检测测试来检测LCD的亮度均匀性。The method may further include inspecting the brightness uniformity of the LCD, such as by performing a visual inspection test.

该方法可进一步包括当具有电桥的第一子像素和第二子像素的像素的亮度不同于其它不具有电桥的像素的亮度时,识别第一子像素电极和第二子像素电极之间电桥的存在。The method may further include identifying a gap between the first sub-pixel electrode and the second sub-pixel electrode when the luminance of the pixel with the bridge first sub-pixel and the second sub-pixel is different from the luminance of other pixels without the bridge. presence of the bridge.

该方法可进一步包括识别第一子像素电极与屏蔽电极之间电桥的存在。The method may further include identifying the presence of a bridge between the first subpixel electrode and the shield electrode.

该方法可进一步包括将第一栅极短路棒、第二栅极短路棒与第一栅极线、第二栅极线分离,并且将数据短路棒与数据线分离。The method may further include separating the first gate shorting bar and the second gate shorting bar from the first gate line and the second gate line, and separating the data shorting bar from the data line.

根据本发明的其它示例性实施例,提供了一种LCD的测试方法,该LCD包括:多个像素电极,其具有第一子像素电极和第二子像素电极;第一开关元件和第二开关元件,分别连接至第一子像素电极和第二子像素电极;第一栅极线和第二栅极线,分别连接至第一开关元件和第二开关元件;以及连接至第一开关元件和第二开关元件的数据线。该测试方法包括:提供第一栅极短路棒和第二栅极短路棒,其分别连接至在奇数像素行的第一栅极线和第二栅极线;提供第三栅极短路棒和第四栅极短路棒,其分别连接至在偶数像素行的第一栅极线和第二栅极线;提供数据短路棒,其连接至数据线;向数据短路棒施加正数据电压;向第一栅极短路棒施加第一栅极测试信号,以向在奇数像素行的第一子像素电极施加正数据电压;向数据短路棒施加负数据电压;向第二栅极短路棒和第三栅极短路棒施加第二栅极测试信号和第三栅极测试信号,以向在奇数像素行的第二子像素电极和在偶数像素行的第一子像素电极施加负数据电压;并且向第四栅极短路棒施加第四栅极测试信号,以向在偶数像素行的第二子像素电极施加正数据电压。According to other exemplary embodiments of the present invention, a method for testing an LCD is provided, and the LCD includes: a plurality of pixel electrodes having a first sub-pixel electrode and a second sub-pixel electrode; a first switching element and a second switch elements, respectively connected to the first sub-pixel electrode and the second sub-pixel electrode; the first gate line and the second gate line, respectively connected to the first switching element and the second switching element; and connected to the first switching element and The data line of the second switching element. The test method includes: providing a first gate shorting bar and a second gate shorting bar, which are respectively connected to the first gate line and the second gate line in the odd pixel row; providing the third gate shorting bar and the second gate shorting bar Four gate shorting bars, which are respectively connected to the first gate line and the second gate line in the even pixel row; provide data shorting bars, which are connected to the data lines; apply a positive data voltage to the data shorting bars; The gate short bar applies the first gate test signal to apply the positive data voltage to the first sub-pixel electrode in the odd pixel row; the negative data voltage is applied to the data short bar; the second gate short bar and the third gate The shorting bar applies the second gate test signal and the third gate test signal to apply a negative data voltage to the second sub-pixel electrodes in the odd pixel rows and the first sub-pixel electrodes in the even pixel rows; and apply a negative data voltage to the fourth gate The pole-shorting bar applies a fourth gate test signal to apply a positive data voltage to the second sub-pixel electrode in the even-numbered pixel row.

该方法可进一步包括检测第一子像素电极和第二子像素电极的极性。The method may further include detecting polarities of the first subpixel electrode and the second subpixel electrode.

该方法可进一步包括识别第一子像素电极与第二子像素电极之间电桥的存在。The method may further include identifying the presence of a bridge between the first subpixel electrode and the second subpixel electrode.

该方法可进一步包括识别相邻电极的第一子像素电极之间电桥的存在。The method may further include identifying the presence of a bridge between the first sub-pixel electrodes of adjacent electrodes.

正数据电压和负数据电压可具有基本相同的大小。The positive data voltage and the negative data voltage may have substantially the same magnitude.

该方法可进一步包括检测LCD的亮度均匀性。The method may further include detecting brightness uniformity of the LCD.

该方法可进一步包括将第一和第二栅极短路棒与在奇数像素行的第一和第二栅极线分离,将第三和第四栅极短路棒与在偶数像素行的第一和第二栅极线分离,以及将数据短路棒与数据线分离。The method may further include separating the first and second gate shorting bars from the first and second gate lines in odd pixel rows, and separating the third and fourth gate shorting bars from the first and second gate lines in even pixel rows. The second gate line is separated, and the data short bar is separated from the data line.

根据本发明的示例性实施例,LCD包括多个呈矩阵排列的像素电极,每个像素电极均具有彼此大小不同的第一子像素电极和第二子像素电极;以及分别连接至第一子像素电极和第二子像素电极的第一开关元件和第二开关元件。栅极线连接至第一开关元件和第二开关元件。第一数据线和第二数据线与栅极线交叉并且分别连接至第一开关元件和第二开关元件。第一数据短路棒和第二数据短路棒分别连接至第一数据线和第二数据线。According to an exemplary embodiment of the present invention, the LCD includes a plurality of pixel electrodes arranged in a matrix, and each pixel electrode has a first sub-pixel electrode and a second sub-pixel electrode with different sizes from each other; and is respectively connected to the first sub-pixel electrode and the first switching element and the second switching element of the second sub-pixel electrode. The gate line is connected to the first switching element and the second switching element. The first and second data lines cross the gate lines and are connected to the first and second switching elements, respectively. The first data short bar and the second data short bar are respectively connected to the first data line and the second data line.

彼此极性不同的数据电压可施加给第一数据短路棒和第二数据短路棒。Data voltages of different polarities from each other may be applied to the first and second data shorting bars.

彼此极性不同的数据电压可具有基本相同的大小。The data voltages having polarities different from each other may have substantially the same magnitude.

栅极短路棒可连接至栅极线。A gate shorting bar may be connected to the gate line.

施加给第一子像素电极和第二子像素电极的数据电压的大小可以彼此不同,并且可以从一个图像信息组中获得。The magnitudes of the data voltages applied to the first subpixel electrode and the second subpixel electrode may be different from each other, and may be obtained from one image information group.

第一子像素电极的尺寸可大于第二子像素电极的尺寸,并且施加给第一子像素电极的数据电压的大小小于施加给第二子像素电极的数据电压的大小。The size of the first subpixel electrode may be larger than that of the second subpixel electrode, and the magnitude of the data voltage applied to the first subpixel electrode is smaller than the magnitude of the data voltage applied to the second subpixel electrode.

第一数据短路棒和第二数据短路棒可与栅极线形成在液晶显示器的同一层中。The first data short bar and the second data short bar may be formed in the same layer of the liquid crystal display as the gate lines.

第一数据短路棒和第二数据短路棒可基本上平行于栅极线。The first data shorting bar and the second data shorting bar may be substantially parallel to the gate lines.

第一数据短路棒和第二数据短路棒可处于LCD显示面板边缘的外部。The first data short bar and the second data short bar may be outside the edge of the LCD display panel.

根据本发明的其它示例性实施例,提供了一种LCD的测试方法,该LCD包括:多个像素电极,其具有第一子像素电极和第二子像素电极;第一开关元件和第二开关元件,分别连接至第一子像素电极和第二子像素电极;栅极线,分别连接至第一开关元件和第二开关元件;以及第一数据线和第二数据线,分别连接至第一开关元件和第二开关元件。该测试方法包括:提供第一数据短路棒和第二数据短路棒,其连接至第一数据线和第二数据线;提供栅极短路棒,其连接至栅极线;向第一数据短路棒施加正数据电压;向第二数据短路棒施加负数据电压;向栅极短路棒施加栅极测试信号,以向第一子像素电极施加正数据电压并向第二子像素电极施加负数据电压。According to other exemplary embodiments of the present invention, a method for testing an LCD is provided, and the LCD includes: a plurality of pixel electrodes having a first sub-pixel electrode and a second sub-pixel electrode; a first switching element and a second switch element, respectively connected to the first sub-pixel electrode and the second sub-pixel electrode; the gate line, respectively connected to the first switching element and the second switching element; and the first data line and the second data line, respectively connected to the first a switching element and a second switching element. The test method includes: providing a first data shorting bar and a second data shorting bar, which are connected to the first data line and the second data line; providing a gate shorting bar, which is connected to the gate line; applying a positive data voltage; applying a negative data voltage to the second data shorting bar; applying a gate test signal to the gate shorting bar to apply a positive data voltage to the first sub-pixel electrode and a negative data voltage to the second sub-pixel electrode.

该方法包括检测LCD的亮度均匀性。The method includes testing the brightness uniformity of the LCD.

该方法可进一步包括识别第一数据线与第二数据线之间电桥的存在。The method may further include identifying the presence of a bridge between the first data line and the second data line.

该方法可进一步包括识别第一子像素电极与第二子像素电极之间电桥的存在。The method may further include identifying the presence of a bridge between the first subpixel electrode and the second subpixel electrode.

正数据电压和负数据电压具有基本相同的大小。The positive data voltage and the negative data voltage have substantially the same magnitude.

该方法可进一步包括将第一和第二数据短路棒与第一和第二数据线分离,以及将栅极短路棒与栅极线分离。The method may further include separating the first and second data short bars from the first and second data lines, and separating the gate short bars from the gate lines.

附图说明 Description of drawings

通过参照附图详细描述实施例,本发明将变得更加显而易见,其中:The present invention will become more apparent by describing in detail embodiments with reference to the accompanying drawings, in which:

图1是根据本发明的LCD的示例性实施例的示意图;1 is a schematic diagram of an exemplary embodiment of an LCD according to the present invention;

图2是根据本发明的LCD的示例性实施例的示例性像素的等效电路图;2 is an equivalent circuit diagram of an exemplary pixel of an exemplary embodiment of an LCD according to the present invention;

图3是根据本发明的LCD的示例性实施例的示例性子像素的等效电路图;3 is an equivalent circuit diagram of an exemplary subpixel of an exemplary embodiment of an LCD according to the present invention;

图4是根据本发明的LCD的示例性实施例的平面图;4 is a plan view of an exemplary embodiment of an LCD according to the present invention;

图5和6是沿图4的V-V’线和VI-VI’线截取的LCD的示例性实施例的横截面图;5 and 6 are cross-sectional views of an exemplary embodiment of an LCD taken along lines V-V' and lines VI-VI' of FIG. 4;

图7是图1所示LCD的示例性实施例的示例性栅极短路棒的放大图;7 is an enlarged view of an exemplary gate shorting bar of the exemplary embodiment of the LCD shown in FIG. 1;

图8是沿图7的VIII-VIII’线截取的LCD的示例性实施例的横截面图;8 is a cross-sectional view of an exemplary embodiment of an LCD taken along line VIII-VIII' of FIG. 7;

图9是根据本发明的LCD的示例性实施例的测试波形图;9 is a test waveform diagram of an exemplary embodiment of an LCD according to the present invention;

图10示出根据本发明LCD的示例性实施例的示例性像素的极性;Figure 10 shows the polarity of an exemplary pixel according to an exemplary embodiment of an LCD of the present invention;

图11是根据本发明的LCD的另一示例性实施例的示意图;11 is a schematic diagram of another exemplary embodiment of an LCD according to the present invention;

图12是图11所示LCD的示例性实施例的示例性栅极短路棒的放大图;12 is an enlarged view of an exemplary gate shorting bar of the exemplary embodiment of the LCD shown in FIG. 11;

图13是根据本发明的LCD的另一示例性实施例的测试波形图;13 is a test waveform diagram of another exemplary embodiment of an LCD according to the present invention;

图14示出根据本发明LCD的另一示例性实施例的像素的极性;Fig. 14 shows the polarity of the pixel according to another exemplary embodiment of the LCD of the present invention;

图15是根据本发明的LCD的另一示例性实施例的示意图;15 is a schematic diagram of another exemplary embodiment of an LCD according to the present invention;

图16是根据本发明的LCD的另一示例性实施例的示例性像素的等效电路图;16 is an equivalent circuit diagram of an exemplary pixel of another exemplary embodiment of an LCD according to the present invention;

图17是根据本发明的LCD的另一示例性实施例的平面图;17 is a plan view of another exemplary embodiment of an LCD according to the present invention;

图18是沿图17的XVIII-XVIII’线截取的LCD的示例性实施例的横截面图;18 is a cross-sectional view of an exemplary embodiment of an LCD taken along line XVIII-XVIII' of FIG. 17;

图19是图15所示LCD的示例性实施例的示例性数据短路棒的放大图;19 is an enlarged view of an exemplary data shorting bar of the exemplary embodiment of the LCD shown in FIG. 15;

图20是沿图19的XX-XX’线截取的LCD的示例性实施例的横截面图;20 is a cross-sectional view of an exemplary embodiment of an LCD taken along line XX-XX' of FIG. 19;

图21是根据本发明的LCD的另一示例性实施例的测试波形图;以及21 is a test waveform diagram of another exemplary embodiment of an LCD according to the present invention; and

图22示出根据本发明LCD的另一示例性实施例的示例性像素的极性。FIG. 22 shows polarities of exemplary pixels according to another exemplary embodiment of an LCD of the present invention.

具体实施方式 Detailed ways

下面将参照附图更加全面地描述本发明,在附图中示出了本发明的实施例。然而,本发明可以多种不同的方式来实现而不局限于在此描述的实施例。相反地,所提供的这些实施例,对本领域的技术人员来说,使得本发明充分公开并且完全覆盖本发明的范围。在整个说明书附图中,相同的标号表示相同的元件。附图中,为清楚起见,扩大了层和区域的厚度。The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, the present invention can be implemented in many different ways and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will fully disclose and fully cover the scope of the present invention to those skilled in the art. Like reference numerals refer to like elements throughout the drawings of the specification. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

应当理解,当元件或层被指出“位于”另一个元件上时,该元件可直接位于另一个元件上,或者也可在其间存在插入元件。相反地,当元件被指出“直接位于”另一个元件上时,是指在元件之间不存在插入元件。正如在此所应用的,术语“和/或”包括任何的以及所有的一个或多个相关所列术语的结合。It will be understood that when an element or layer is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present therebetween. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present therebetween. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

应当理解,尽管在此可能使用术语第一、第二等来描述不同的元件、部件、区域、层、和/或部分,但是这些元件、部件、区域、层、和/或部分并不局限于这些术语。这些术语仅用于将一个元件、部件、区域、层、或部分另一个区域、层、或部分相区分。因此,在不背离本发明宗旨的情况下,下文所述的第一元件、组件、区域、层、或部分可以称为第二元件、组件、区域、层、或部分。It should be understood that although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers, and/or sections, these elements, components, regions, layers, and/or sections are not limited to these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Therefore, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the spirit of the present invention.

在此使用的术语仅用于描述特定实施例而不是限制本发明。正如在此使用的,单数形式的“一个”、“这个”也包括复数形式,除非文中有其它明确指示。应当进一步理解,当在本申请文件中使用术语“包括”和/或“包含”时,是指存在所声称的特征、整数、步骤、操作、元件、和/或部件,但是并不排除还存在或附加一个或多个其它的特征、整数、步骤、操作、元件、部件、和/或其组合。The terms used herein are for describing particular embodiments only and do not limit the present invention. As used herein, the singular forms "a", "the" and "the" also include plural forms, unless the context clearly indicates otherwise. It should be further understood that when the terms "comprising" and/or "comprising" are used in this application document, it means that there are claimed features, integers, steps, operations, elements, and/or parts, but it does not exclude the presence of Or additional one or more other features, integers, steps, operations, elements, parts, and/or combinations thereof.

为了便于说明,在此可能使用诸如“在...之下”、“在...下面”、“下面的”、“在...上面”、以及“上面的”等的空间关系术语,以描述如图中所示的一个元件或机构与另一元件或机构的关系。应当理解,除图中所示的方位之外,空间关系术语将包括使用或操作中的装置的各种不同的方位。例如,如果翻转图中所示的装置,则被描述为在其他元件或机构“下面”或“之下”的元件将被定位为在其他元件或机构的“上面”。因此,示例性术语“在...下面”包括在上面和在下面的方位。装置可以以其它方式定位(旋转90度或在其他方位),并且在此所描述的空间关系可相应地进行解释。For ease of description, spatial relational terms such as "under", "beneath", "beneath", "above", and "above" may be used herein, To describe the relationship of one element or mechanism to another element or mechanism as shown in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" encompasses an orientation of above as well as below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial relationships described herein interpreted accordingly.

除非另有限定,在此所采用的所有的术语(包括技术和科技术语)具有与本发明所属领域的普通技术人员通常所理解的相同意思。对该术语的进一步理解,例如,字典中通常采用的限定术语应该被解释为与相关技术上下文中的意思相一致的意思,并且除非在此进行特别限定,其不应被解释为理想的或者过于正式的解释。Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. For a further understanding of the term, for example, defined terms commonly used in dictionaries should be interpreted as meanings consistent with the meanings in the relevant technical context, and unless specifically defined here, they should not be interpreted as ideal or too formal explanation.

在此,参考作为本发明的理想实施例的示意图的横截示意图描述本发明的实施例。同样,可以预料诸如制造技术和/或公差可以导致示意图的变化。因此,本发明的实施例不应该被理解为局限于在此示出的特定形状,而且包括例如由于制造而导致的形状的偏差。例如,被显示或描述为平坦的区域,典型地可能具有粗糙和/或非线性特性。此外,所示的锐角可以为圆角。因此,在图中示出的区域实际上是示意性的,并且形状并不用于描述区域的准确形状,并且不用于限定本发明的范围。Embodiments of the invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments of the invention. Also, it is contemplated that factors such as manufacturing techniques and/or tolerances may cause variations in the illustrations. Thus, embodiments of the invention should not be construed as limited to the particular shapes shown herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region shown or described as flat, will, typically, have rough and/or non-linear characteristics. Additionally, sharp corners shown may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the invention.

下面,将参照附图描述根据本发明的LCD的示例性实施例以及其测试方法。Hereinafter, an exemplary embodiment of an LCD according to the present invention and a testing method thereof will be described with reference to the accompanying drawings.

图1是根据本发明的LCD的示例性实施例的示意图,图2是根据本发明的LCD的示例性实施例的示例性像素的等效电路图,图3是根据本发明的LCD的示例性实施例的示例性子像素的等效电路图。1 is a schematic diagram of an exemplary embodiment of an LCD according to the present invention, FIG. 2 is an equivalent circuit diagram of an exemplary pixel of an exemplary embodiment of an LCD according to the present invention, and FIG. 3 is an exemplary implementation of an LCD according to the present invention. The equivalent circuit diagram of an exemplary sub-pixel of the example.

如图1所示,LCD的示例性实施例包括液晶面板组件,从等效电路的角度观察,其具有多条显示信号线G1a-Gnb和D1-Dm;以及多个像素PX,其大概以矩阵形式排列并连接至显示信号线G1a-Gnb和D1-Dm。根据图3所示的结构,液晶显示面板组件包括下部面板100和上部面板200以及位于面板100和200之间的液晶层3。下部面板100也可称为薄膜晶体管(“TFT”)面板或第一面板,并且上部面板200也可称为共电极面板、滤色器面板、或第二面板。As shown in FIG. 1 , an exemplary embodiment of an LCD includes a liquid crystal panel assembly, which has a plurality of display signal lines G1a-Gnb and D1-Dm from the viewpoint of an equivalent circuit; and a plurality of pixels PX, roughly arranged in a matrix form and connect to display signal lines G1a-Gnb and D1-Dm. According to the structure shown in FIG. 3 , the liquid crystal display panel assembly includes a lower panel 100 and an upper panel 200 and a liquid crystal layer 3 between the panels 100 and 200 . The lower panel 100 may also be called a thin film transistor ("TFT") panel or a first panel, and the upper panel 200 may also be called a common electrode panel, a color filter panel, or a second panel.

显示信号线G1a-Gnb和D1-Dm设置在下部面板100,其具有多条用于传输栅极信号(也被称为“扫描信号”)的栅极线G1a-Gnb和用于传输数据信号的数据线D1-Dm。栅极线G1-Gn沿像素行的方向延伸,其在第一方向基本上互相平行,并且数据线D1a-Dmb沿像素列的方向延伸,其在第二方向基本上互相平行。第一方向可基本上垂直于第二方向。Display signal lines G1a-Gnb and D1-Dm are provided on the lower panel 100, which has a plurality of gate lines G1a-Gnb for transmitting gate signals (also referred to as “scanning signals”) and a plurality of gate lines G1a-Gnb for transmitting data signals. Data lines D1-Dm. The gate lines G1-Gn extend along the direction of pixel rows, which are substantially parallel to each other in a first direction, and the data lines D1a-Dmb extend along the direction of pixel columns, which are substantially parallel to each other in a second direction. The first direction may be substantially perpendicular to the second direction.

液晶显示面板组件进一步包括分别连接至栅极线G1a-Gnb的栅极焊盘(pad)PG1a-PGnb和分别连接至数据线D1-Dm的数据焊盘PD1-PDm。也就是说,每条栅极线G1a-Gnb均连接至一个栅极焊盘PG,并且每条数据线D1-Dm均连接至一个数据焊盘PD。第一栅极短路棒320a和第二栅极短路棒320b连接至相应的栅极焊盘PG1-PGnb,并且数据短路棒310连接至各个数据焊盘PD1-PDm。The liquid crystal display panel assembly further includes gate pads PG1a-PGnb respectively connected to the gate lines G1a-Gnb and data pads PD1-PDm respectively connected to the data lines D1-Dm. That is, each gate line G1a-Gnb is connected to one gate pad PG, and each data line D1-Dm is connected to one data pad PD. The first gate shorting bar 320a and the second gate shorting bar 320b are connected to the corresponding gate pads PG1-PGnb, and the data shorting bar 310 is connected to the respective data pads PD1-PDm.

第一栅极短路棒320a通过第一栅极延伸线(gate extension line)321a、322a、323a、...连接至第一栅极焊盘PG1a、PG2a、PG3a、...,并且第二栅极短路棒320b通过第二栅极延伸线321b、322b、...连接至第二栅极焊盘PG1b、PG2b、...。第一栅极短路棒320a和第二栅极短路棒320b可基本上垂直于栅极线G1a-Gnb并基本上平行于数据线D1-Dm延伸。数据短路棒310通过数据延伸线311、312、313、...连接至数据焊盘PD1、PD2、PD3、...。数据短路棒310可基本上垂直于数据线D1-Dm并基本上平行于栅极线G1a-Gnb延伸。由此,各条第一栅极线G1a-Gna通过第一栅极短路棒320a彼此连接,并且各条第二栅极线G1b-Gnb通过第二栅极短路棒320b彼此连接。此外,各条数据线D1-Dm通过数据短路棒310彼此连接。在栅极短路棒320a和320b、以及数据短路棒310的端部设置单独的焊盘(未示出),以施加各种测试信号,以下将对其进行进一步的描述。The first gate short bar 320a is connected to the first gate pads PG1a, PG2a, PG3a, ... through the first gate extension lines (gate extension line) 321a, 322a, 323a, ..., and the second gate The pole shorting bar 320b is connected to the second gate pads PG1b, PG2b, . . . through the second gate extension lines 321b, 322b, . . . The first gate shorting bar 320a and the second gate shorting bar 320b may extend substantially perpendicular to the gate lines G1a-Gnb and substantially parallel to the data lines D1-Dm. The data short bar 310 is connected to the data pads PD1, PD2, PD3, . . . through the data extension lines 311, 312, 313, . . . The data short bars 310 may extend substantially perpendicular to the data lines D1-Dm and substantially parallel to the gate lines G1a-Gnb. Thus, the respective first gate lines G1a-Gna are connected to each other through the first gate shorting bar 320a, and the respective second gate lines G1b-Gnb are connected to each other through the second gate shorting bar 320b. In addition, the respective data lines D1 - Dm are connected to each other through data short bars 310 . Separate pads (not shown) are provided at the ends of the gate shorting bars 320a and 320b and the data shorting bar 310 to apply various test signals, which will be further described below.

栅极短路棒320a和320b、以及数据短路棒310经过若干测试,随后沿其LX线去除。也就是说,保留LX边缘的内部中的元件用于LCD,并且去除LX边缘外部的元件,例如第一栅极短路棒320a、第二栅极短路棒320b、以及数据短路棒310。因此,通过去除短路棒320a、320b和310,将各条栅极线G1a-Gnb与数据线D1-Dm彼此分离。栅极驱动器(未示出)和数据驱动器(未示出)外部连接至栅极焊盘PG1a-PGnb和数据焊盘PD1-PDm,以分别向栅极线G1a-Gnb和数据线D1-Dm施加栅极信号和数据信号。然而,在栅极驱动器集成于液晶面板组件的情况下,在从栅极驱动器伸出栅极延伸线321a、321b、322a、322b、...时,可以省略栅极焊盘。The gate shorting bars 320a and 320b, and the data shorting bar 310 are subjected to several tests and then removed along their LX lines. That is, elements in the interior of the LX edge are reserved for the LCD, and elements outside the LX edge, such as the first gate shorting bar 320a, the second gate shorting bar 320b, and the data shorting bar 310, are removed. Therefore, by removing the shorting bars 320a, 320b, and 310, the respective gate lines G1a-Gnb and the data lines D1-Dm are separated from each other. A gate driver (not shown) and a data driver (not shown) are externally connected to the gate pads PG1a-PGnb and the data pads PD1-PDm to apply gate signal and data signal. However, in the case that the gate driver is integrated into the liquid crystal panel assembly, the gate pads may be omitted when extending the gate extension lines 321a, 321b, 322a, 322b, . . . from the gate driver.

图2示出显示信号线和示例性像素PX的等效电路图,其中,显示信号线包括由GLa和GLb表示的栅极线、由DL表示的数据线、以及几乎平行于栅极线GLa和GLb延伸并将像素Px分割的存储电极线SL。2 shows an equivalent circuit diagram of display signal lines and an exemplary pixel PX, wherein the display signal lines include gate lines denoted by GLa and GLb, data lines denoted by DL, and gate lines almost parallel to the gate lines GLa and GLb. The storage electrode line SL that extends and divides the pixels Px.

各个像素Px均包括一对子像素Pxa和Pxb,每一个均具有连接至相应栅极线GLa和GLb以及数据线DL的开关元件Qa和Qb;液晶电容器CLca和CLCb,其连接至开关元件Qa和Qb;存储电容器CSTa和CSTb,其连接至开关元件Qa和Qb;以及存储电极线SL。在可选实施例中,可以省略存储电容器CSTa和CSTb,并且在这种情况下,可以省略存储电极线SL。Each pixel Px includes a pair of subpixels Pxa and Pxb, each having switching elements Qa and Qb connected to corresponding gate lines GLa and GLb and data line DL; liquid crystal capacitors C Lca and C LCb connected to the switching elements Qa and Qb; storage capacitors C STa and C STb connected to switching elements Qa and Qb; and a storage electrode line SL. In alternative embodiments, the storage capacitors C STa and C STb may be omitted, and in this case, the storage electrode line SL may be omitted.

如图1和2所示,所有的第一栅极线GLa均连接至第一栅极短路棒320a,并且所有的第二栅极线GLb均连接至第二栅极短路棒320b。由此,可将相同的信号施加给各个第一子像素Pxa,并且可将相同的信号施加给各个第二子像素Pxb,然而,施加给第一子像素Pxa的信号可不同于施加给第二子像素Pxb的信号,下面将对其进行进一步的描述。As shown in FIGS. 1 and 2 , all of the first gate lines GLa are connected to the first gate shorting bar 320a, and all of the second gate lines GLb are connected to the second gate shorting bar 320b. Thus, the same signal can be applied to each first subpixel Pxa, and the same signal can be applied to each second subpixel Pxb, however, the signal applied to the first subpixel Pxa can be different from that applied to the second subpixel Pxa. The signal of the sub-pixel Pxb will be further described below.

如图3所示,各个子像素Pxa和Pxb的开关元件Q形成有在下部面板100形成的TFT,该TFT为三极管装置,其具有连接至栅极线GL的控制端(栅极)、连接至数据线DL的输入端(源极)、以及连接至液晶电容器CLC和存储电容器CST的输出端(漏极)。而图3中仅示出了一个子像素Pxb,应该理解的是,每个像素PX还包括如前面图2所示的子像素Pxa。As shown in FIG. 3 , the switching elements Q of the respective sub-pixels Pxa and Pxb are formed with a TFT formed on the lower panel 100, which is a triode device having a control terminal (gate) connected to the gate line GL, connected to The input terminal (source) of the data line DL, and the output terminal (drain) connected to the liquid crystal capacitor C LC and the storage capacitor C ST . While only one sub-pixel Pxb is shown in FIG. 3 , it should be understood that each pixel PX also includes a sub-pixel Pxa as shown in FIG. 2 above.

液晶电容器CLC采用下部面板100的子像素电极PE和上部面板200的共电极CE作为两个端子。位于两个电极PE和CE之间的液晶层3起到电介质的作用。子像素电极PE连接至开关元件Q,并且共电极CE形成在上部面板200的整个表面、或者基本整个表面上,以接收共电压Vcom。可选地,共电极CE也可设置在下部面板100,在这种情况下,两个电极PE和CE中的至少一个形成线或棒的形状。The liquid crystal capacitor C LC uses the sub-pixel electrode PE of the lower panel 100 and the common electrode CE of the upper panel 200 as two terminals. The liquid crystal layer 3 located between the two electrodes PE and CE acts as a dielectric. The subpixel electrode PE is connected to the switching element Q, and the common electrode CE is formed on the entire surface, or substantially the entire surface, of the upper panel 200 to receive the common voltage Vcom. Optionally, the common electrode CE may also be provided at the lower panel 100, and in this case, at least one of the two electrodes PE and CE is formed in a wire or rod shape.

关于辅助液晶电容器的存储电容器CST,在夹置绝缘体时,设置在下部面板100的存储电极线SL和像素电极PE彼此重叠,并且将诸如共电压Vcom的预定电压施加给存储电极线SL。可选地,在夹置绝缘体时,可通过将子像素电极PE与最接近的前端栅极线重叠,形成存储电容器。Regarding the storage capacitor C ST of the auxiliary liquid crystal capacitor, the storage electrode line SL and the pixel electrode PE provided on the lower panel 100 overlap each other while interposing an insulator, and a predetermined voltage such as a common voltage Vcom is applied to the storage electrode line SL. Optionally, when an insulator is interposed, a storage capacitor can be formed by overlapping the sub-pixel electrode PE with the closest front-end gate line.

为了使液晶面板组件显示颜色,各个像素均可固有地呈现出原(主)色中的一种(空间分割),或者选择地按时间顺序呈现出原色(时间分割),从而可以通过原色的空间和时间上的总和看到期望的颜色。原色优选地包括红色、绿色、和蓝色,然而,可选的颜色也宰这些实施例的范围中。图3示出了时间分割的实例,其中,每个像素在上部面板200的区域均具有呈现出原色之一的滤色器CF。在可选的实施例中,滤色器CF可形成在下部面板100的子像素电极PE之上或之下。In order for the liquid crystal panel assembly to display colors, each pixel can either inherently exhibit one of the primary (primary) colors (spatial division) or selectively exhibit the primary colors in temporal order (time division) so that the spatial and the sum over time to see the desired color. Primary colors preferably include red, green, and blue, however, alternative colors are also within the scope of these embodiments. FIG. 3 shows an example of time division, where each pixel has a color filter CF exhibiting one of the primary colors in the area of the upper panel 200 . In alternative embodiments, the color filter CF may be formed on or under the sub-pixel electrode PE of the lower panel 100 .

参照图4至图6,将进一步描述LCD的结构。Referring to FIGS. 4 to 6, the structure of the LCD will be further described.

图4是根据本发明的LCD的示例性实施例的平面图,图5和6是沿图4的V-V’线和VI-VI’线截取的LCD示例性实施例的横截面图。4 is a plan view of an exemplary embodiment of an LCD according to the present invention, and FIGS. 5 and 6 are cross-sectional views of the exemplary embodiment of the LCD taken along lines V-V' and VI-VI' of FIG. 4 .

图4至6中所示的LCD包括下部面板100、面向下部面板100的上部面板200、以及位于面板100和200之间的液晶层3。The LCD shown in FIGS. 4 to 6 includes a lower panel 100 , an upper panel 200 facing the lower panel 100 , and a liquid crystal layer 3 between the panels 100 and 200 .

首先,将进一步描述下部面板100。First, the lower panel 100 will be further described.

基于透明玻璃或塑料的绝缘基板110由多对第一栅极线121a和第二栅极线121b以及多条存储电极线131覆盖。The insulating substrate 110 based on transparent glass or plastic is covered by a plurality of pairs of first and second gate lines 121 a and 121 b and a plurality of storage electrode lines 131 .

栅极线121a和121b沿诸如横向或第一方向水平延伸,并且彼此物理-电(physico-electrically)分离,以传输栅极信号。第一栅极线121a和第二栅极线121b包括多个部分,这些部分偏离第一栅极线121a和第二栅极线121b的纵向并且具有左侧宽区域的端部129a和129b,用于将多个从第一栅极线121a和第二栅极线121b突出的第一栅电极124a和124b连接至另一层或外部驱动电路。可选地,端部129a和129b可设置在左右两侧,例如交替设置、或者都只设置在右侧。The gate lines 121a and 121b extend horizontally, such as in a lateral direction or a first direction, and are physically-electrically separated from each other to transmit gate signals. The first gate line 121a and the second gate line 121b include a plurality of portions that deviate from the longitudinal direction of the first gate line 121a and the second gate line 121b and have end portions 129a and 129b of left wide areas, with To connect the plurality of first gate electrodes 124a and 124b protruding from the first gate line 121a and the second gate line 121b to another layer or an external driving circuit. Optionally, the ends 129a and 129b may be arranged on the left and right sides, for example alternately, or both are only arranged on the right side.

存储电极线131也基本上平行于第一栅极线121a和第二栅极线121b水平延伸,并且相比于第二栅极线121b,更靠近第一栅极线121a。各条存储电极线131包括多个存储电极137,其从存储电极线131中突出并具有宽区域。存储电极137可为矩形形状并且与存储电极线131对称。向存储电极线131施加预定电压,例如施加给LCD的上部面板200的共电极270的共电压。The storage electrode line 131 also extends horizontally substantially parallel to the first gate line 121a and the second gate line 121b, and is closer to the first gate line 121a than to the second gate line 121b. Each storage electrode line 131 includes a plurality of storage electrodes 137 protruding from the storage electrode line 131 and having a wide area. The storage electrode 137 may be rectangular in shape and symmetrical to the storage electrode line 131 . A predetermined voltage, such as a common voltage applied to the common electrode 270 of the upper panel 200 of the LCD, is applied to the storage electrode line 131 .

栅极线121a和121b以及存储电极线131由诸如铝(Al)和铝合金的基于铝的金属材料、诸如银(Ag)和银合金的基于银的金属材料、铜(Cu)和铜合金的基于铜的金属材料、钼(Mo)和钼合金的基于钼的金属材料、铬(Cr)、钛(Ti)或钽(Ta)形成。可选地,栅极线121a和121b以及存储电极线131可具有多层结构,其带有物理特性不同的两个导电层(未示出)。如果采用多层结构,导电层中的一层可由诸如基于铝的金属材料、基于银的金属材料、以及基于铜的金属材料的低电阻率的金属材料形成,由此可以降低栅极线121a和121b以及存储电极线131的信号延迟或电压降。相反地,多层结构中的另一导电层可由相对于诸如氧化铟锡(“ITO”)或氧化铟锌(“IZO”)的其它材料具有良好接触特性的材料形成,例如基于钼的金属材料、铬、钛、以及钽。这种组合的实例包括具有基于铬的下部面板和基于铝的上部面板的结构,以及基于铝的下部面板和基于钼的上部面板的结构。虽然已经描述了特定实施例和实例,栅极线121a和121b以及存储电极线131也可由多种其它金属材料和导体形成。The gate lines 121a and 121b and the storage electrode lines 131 are made of aluminum-based metal materials such as aluminum (Al) and aluminum alloys, silver-based metal materials such as silver (Ag) and silver alloys, copper (Cu) and copper alloys. Copper-based metal materials, molybdenum (Mo) and molybdenum-based metal materials of molybdenum alloys, chromium (Cr), titanium (Ti), or tantalum (Ta) are formed. Alternatively, the gate lines 121a and 121b and the storage electrode line 131 may have a multilayer structure with two conductive layers (not shown) having different physical properties. If a multilayer structure is adopted, one layer of the conductive layer may be formed of a low-resistivity metal material such as an aluminum-based metal material, a silver-based metal material, and a copper-based metal material, whereby the gate line 121a and the gate line 121a can be reduced. 121b and the signal delay or voltage drop of the storage electrode line 131. Conversely, another conductive layer in the multilayer structure may be formed of a material having good contact characteristics relative to other materials such as indium tin oxide ("ITO") or indium zinc oxide ("IZO"), such as a molybdenum-based metallic material , chromium, titanium, and tantalum. Examples of such combinations include structures with a chromium-based lower panel and an aluminum-based upper panel, and structures with an aluminum-based lower panel and a molybdenum-based upper panel. Although specific embodiments and examples have been described, the gate lines 121a and 121b and the storage electrode line 131 may also be formed of various other metal materials and conductors.

栅极线121a和121b以及存储电极线131的侧面相对于绝缘基板110的表面倾斜,其倾斜角优选地在约30°至约80°之间。Sides of the gate lines 121a and 121b and the storage electrode lines 131 are inclined with respect to the surface of the insulating substrate 110, and the inclination angle thereof is preferably between about 30° and about 80°.

栅极绝缘层140形成在栅极线121a和121b以及存储电极线131上,并且可进一步形成在绝缘基板110的露出部分之上。栅极绝缘层140可由氮化硅(SiNx)或类似材料形成。A gate insulating layer 140 is formed on the gate lines 121 a and 121 b and the storage electrode line 131 , and may be further formed on the exposed portion of the insulating substrate 110 . The gate insulating layer 140 may be formed of silicon nitride (SiNx) or the like.

具有氢化非晶硅(“a-Si”)的多个岛状半导体154a、154b和156形成在栅极绝缘层140上。半导体154a和154b分别形成在栅电极124a和124b上。半导体156形成在栅极线121a和121b以及存储电极线131上。A plurality of island-shaped semiconductors 154 a , 154 b and 156 having hydrogenated amorphous silicon (“a-Si”) are formed on the gate insulating layer 140 . Semiconductors 154a and 154b are formed on the gate electrodes 124a and 124b, respectively. A semiconductor 156 is formed on the gate lines 121 a and 121 b and the storage electrode line 131 .

具有n+氢化a-Si的多个岛状欧姆接触件163a、165a和166形成在半导体154a、154b和156上,在n+氢化a-Si中,掺杂诸如硅化物和磷的高浓度n型杂质。一对第一欧姆接触件163a和165a以及一对第二欧姆接触件(未示出)分别设置在半导体154a和154b上并且彼此分离,以在半导体154a和154b上形成沟道。A plurality of island-shaped ohmic contacts 163a, 165a, and 166 having n+ hydrogenated a-Si doped with high-concentration n-type impurities such as silicide and phosphorus are formed on the semiconductors 154a, 154b, and 156 . A pair of first ohmic contacts 163a and 165a and a pair of second ohmic contacts (not shown) are respectively disposed on the semiconductors 154a and 154b and separated from each other to form channels on the semiconductors 154a and 154b.

半导体154a、154b和156以及欧姆接触件163a、165a和166的侧面相对于绝缘基板110的表面倾斜,并且其倾斜角优选地在约30°至约80°的范围内。Sides of the semiconductors 154a, 154b and 156 and the ohmic contacts 163a, 165a and 166 are inclined with respect to the surface of the insulating substrate 110, and the inclination angle thereof is preferably in a range of about 30° to about 80°.

多条数据线171和多对与数据线171分离的漏电极175a和175b形成在欧姆接触件163a、165a、166以及栅极绝缘层140上。A plurality of data lines 171 and pairs of drain electrodes 175 a and 175 b separated from the data lines 171 are formed on the ohmic contacts 163 a , 165 a , 166 and the gate insulating layer 140 .

数据线171诸如沿纵向或第二方向垂直延伸,从而与栅极线121a和121b以及存储电极线131交叉,以将数据电压传输到此。通过设置在栅极线121a与121b之间的栅极绝缘层140将数据线171与栅极线绝缘。各条数据线171包括多个分别向第一漏电极175a和第二漏电极175b延伸的第一源电极173a和第二源电极173b以及宽度扩大的端部179,该端部用于与另一层或诸如数据驱动电路的外部装置连接。The data line 171 extends vertically, such as in a longitudinal or second direction, so as to cross the gate lines 121a and 121b and the storage electrode line 131 to transmit the data voltage thereto. The data line 171 is insulated from the gate line by the gate insulating layer 140 disposed between the gate lines 121a and 121b. Each data line 171 includes a plurality of first source electrodes 173a and second source electrodes 173b respectively extending toward the first drain electrode 175a and the second drain electrode 175b and an end portion 179 with an enlarged width for communicating with another layers or external devices such as data driver circuits.

第一漏电极175a和第二漏电极175b沿第一方向和第二方向从位于半导体154a和154b之上的棒状端部向存储电极137延伸,并且具有与存储电极137重叠的宽延伸部(extension)177a和177b。将各个源电极173a和173b弯曲,以使它们包围漏电极175a和175b的棒状端部。第一栅电极124a和第二栅电极124b、第一源电极173a和第二源电极173b、以及第一漏电极175a和第二漏电极175b与半导体154a和154b一起形成第一薄膜晶体管(“TFT”)Qa和第二薄膜晶体管Qb。TFT Qa和Qb的沟道形成在第一和第二源电极173a、173b与第一和第二漏电极175a、175b之间以及岛状欧姆接触件163a和165a之间的半导体154a和154b上。The first drain electrode 175a and the second drain electrode 175b extend toward the storage electrode 137 from rod-shaped end portions located above the semiconductors 154a and 154b in the first direction and the second direction, and have a wide extension overlapping the storage electrode 137. ) 177a and 177b. The respective source electrodes 173a and 173b are bent so that they surround the rod-shaped ends of the drain electrodes 175a and 175b. The first gate electrode 124a and the second gate electrode 124b, the first source electrode 173a and the second source electrode 173b, and the first drain electrode 175a and the second drain electrode 175b together with the semiconductors 154a and 154b form a first thin film transistor (“TFT”). ”) Qa and the second thin film transistor Qb. Channels of the TFTs Qa and Qb are formed on the semiconductors 154a and 154b between the first and second source electrodes 173a, 173b and the first and second drain electrodes 175a, 175b and between the island-shaped ohmic contacts 163a and 165a.

数据线171和漏电极175a、175b优选地由基于铬的金属材料、基于钼的金属材料、或者诸如钽和钛的难熔金属材料形成,并且可具有多层结构,该多层结构包括基于难熔金属的下部层(未示出)和在下部层上由低电阻材料形成的上部层(未示出)。除了具有基于铬或钼的下部层和基于铝的上部层的双层结构外,多层结构的实例还包括具有钼层-铝层-钼层的三层结构,但并不局限于该结构。然而,数据线171和漏电极175a、175b可由各种金属或导体制成。The data line 171 and the drain electrodes 175a, 175b are preferably formed of a chromium-based metal material, a molybdenum-based metal material, or a refractory metal material such as tantalum and titanium, and may have a multilayer structure including refractory-based A lower layer (not shown) of molten metal and an upper layer (not shown) formed of a low resistance material on the lower layer. Examples of the multilayer structure include, but are not limited to, a three-layer structure having a molybdenum layer-aluminum layer-molybdenum layer in addition to a two-layer structure having a chromium or molybdenum-based lower layer and an aluminum-based upper layer. However, the data line 171 and the drain electrodes 175a, 175b may be made of various metals or conductors.

如与栅极线121a和121b以及存储电极线131一样,数据线171和漏电极175a以及175b的侧面具有相对于绝缘基板110表面的倾斜的边外形,并且其倾斜角在约30°至约80°之间。Like the gate lines 121a and 121b and the storage electrode lines 131, the sides of the data lines 171 and the drain electrodes 175a and 175b have inclined side profiles with respect to the surface of the insulating substrate 110, and the inclination angle thereof is between about 30° to about 80°. ° between.

欧姆接触件163a、163b、165a、165b和166只介于下层半导体154a、154b和156与上覆(overlying)数据线171和漏电极175a、175b之间,以降低其间的接触电阻。半导体154a和154b具有通过源电极173a和173b以及漏电极175a和175b露出的部分。此外,如上所述,半导体156形成在栅极线121a、121b与存储电极线131和数据线171交叉的区域以及漏电极175a、175b与存储电极137交叉的区域,以使在那些交叉区域的外型平滑并防止数据线171和漏电极175a、175b相交。The ohmic contacts 163a, 163b, 165a, 165b and 166 are only interposed between the lower semiconductors 154a, 154b and 156 and the overlying data line 171 and the drain electrodes 175a and 175b to reduce the contact resistance therebetween. The semiconductors 154a and 154b have portions exposed through the source electrodes 173a and 173b and the drain electrodes 175a and 175b. Furthermore, as described above, the semiconductor 156 is formed in the region where the gate lines 121a, 121b intersect the storage electrode line 131 and the data line 171 and the region where the drain electrodes 175a, 175b intersect the storage electrode 137, so that outside those intersecting regions The pattern is smooth and prevents the intersection of the data line 171 and the drain electrodes 175a, 175b.

钝化层180形成在数据线171、漏电极175a、175b以及半导体154a与154b的露出部分上。如图所示,钝化层180可进一步形成在栅极绝缘层140的露出部分上。钝化层180由基于氮化硅或氧化硅的无机材料、具有良好平整特性(flattening characteristics)和感光性的有机材料、或者通过等离子增强型化学气相沉积(“PECVD”)形成的诸如a-Si:C:O和a-Si:O:F的低介电绝缘材料形成。可选地,钝化层180可具有双层结构,该双层结构具有下部无机层和上部无机层,以在确保有机层的良好特性的同时保护半导体154a和154b的露出部分。A passivation layer 180 is formed on the data line 171, the drain electrodes 175a, 175b, and exposed portions of the semiconductors 154a and 154b. As shown, a passivation layer 180 may be further formed on the exposed portion of the gate insulating layer 140 . The passivation layer 180 is formed of an inorganic material based on silicon nitride or silicon oxide, an organic material having good flattening characteristics and photosensitivity, or a material such as a-Si :C:O and a-Si:O:F are formed of low dielectric insulating materials. Alternatively, the passivation layer 180 may have a double-layer structure having a lower inorganic layer and an upper inorganic layer to protect exposed portions of the semiconductors 154a and 154b while ensuring good characteristics of the organic layer.

多个接触孔182、187a和187b形成在钝化层180处,以露出数据线171的端部179以及漏电极175a、175b的延伸部177a和177b。多个接触孔181a和181b形成在钝化层180和栅极绝缘层140处,以露出栅极线121a和121b的端部129a和129b。A plurality of contact holes 182, 187a and 187b are formed at the passivation layer 180 to expose the end 179 of the data line 171 and the extensions 177a and 177b of the drain electrodes 175a and 175b. A plurality of contact holes 181a and 181b are formed at the passivation layer 180 and the gate insulating layer 140 to expose end portions 129a and 129b of the gate lines 121a and 121b.

多个具有第一子像素190a和第二子像素190b的像素电极190、多个屏蔽电极88、以及多个接触辅助件81a、81b、和82形成在钝化层180上。像素电极190、屏蔽电极88、以及接触辅助件81a、81b、和82由诸如ITO或IZO的透明导电材料形成,或者由诸如铝的用于反射型LCD的反射导电材料形成。A plurality of pixel electrodes 190 having first and second subpixels 190 a and 190 b , a plurality of shield electrodes 88 , and a plurality of contact assistants 81 a , 81 b , and 82 are formed on the passivation layer 180 . The pixel electrode 190, the shield electrode 88, and the contact assistants 81a, 81b, and 82 are formed of a transparent conductive material such as ITO or IZO, or a reflective conductive material for a reflective LCD such as aluminum.

第一子像素电极190a和第二子像素电极190b通过接触孔187a和187b物理-电连接至第一漏电极175a和第二漏电极175b,以接收来自第一漏电极175a和第二漏电极175b的数据电压。相对于一个输入图像信号,将彼此不同的预定电压施加给一对子像素电极190a和190b,并且根据子像素电极190a和190b的形状和大小确定其大小(dimension)。此外,子像素电极190a和190b的区域可以彼此不同。例如,第二子像素电极190b接收高于第一子像素电极190a的电压,并具有小于第一子像素电极190a的区域。The first sub-pixel electrode 190a and the second sub-pixel electrode 190b are physically-electrically connected to the first drain electrode 175a and the second drain electrode 175b through the contact holes 187a and 187b, so as to receive signals from the first drain electrode 175a and the second drain electrode 175b. data voltage. With respect to one input image signal, predetermined voltages different from each other are applied to a pair of subpixel electrodes 190a and 190b, and their dimensions are determined according to the shape and size of the subpixel electrodes 190a and 190b. In addition, regions of the subpixel electrodes 190a and 190b may be different from each other. For example, the second subpixel electrode 190b receives a higher voltage than the first subpixel electrode 190a, and has a smaller area than the first subpixel electrode 190a.

根据接收数据电压,子像素电极190a和190b与提供有共电压的对置面板200的共电极270一起产生电场,并调整在两个电极190a和190b与共电极270之间的液晶层3中的液晶分子。According to the received data voltage, the sub-pixel electrodes 190a and 190b generate an electric field together with the common electrode 270 of the opposite panel 200 supplied with a common voltage, and adjust the liquid crystal in the liquid crystal layer 3 between the two electrodes 190a and 190b and the common electrode 270 molecular.

如上所述,子像素电极190a和190b与共电极270形成液晶电容器CLCa和CLCb,以即使在TFT Qa和Qb关闭后仍保持施加到此的电压。存储电容器CSTa和CSTb平行于液晶电容器CLCa和CLCb设置,以增强电压存储容量。通过将第一子像素电极190a、第二子像素电极190b与漏电极175a、175b和连接至此的存储电极137重叠,形成存储电容器CSTa和CSTbAs described above, the subpixel electrodes 190a and 190b and the common electrode 270 form liquid crystal capacitors C LCa and C LCb to maintain the voltage applied thereto even after the TFTs Qa and Qb are turned off. The storage capacitors C STa and C STb are arranged in parallel to the liquid crystal capacitors C LCa and C LCb to enhance the voltage storage capacity. Storage capacitors CSTa and CSTb are formed by overlapping the first subpixel electrode 190a, the second subpixel electrode 190b with the drain electrodes 175a, 175b and the storage electrode 137 connected thereto.

各个像素电极190在其右边角被斜切或者被切边(edge-cut),并且切脚(cut-leg)相对于栅极线121a和121b的角度约为45°。Each pixel electrode 190 is chamfered or edge-cut at its right corner, and the angle of the cut-leg relative to the gate lines 121a and 121b is about 45°.

在插入间隙(gap)94时,形成一个像素电极190的一对第一子像素电极190a和第二子像素电极190b彼此接合,并且像素电极190的外形大概呈矩形形状。第二子像素电极190b的形状为旋转的的等边梯形,其具有梯形的凹底面。第二子像素电极190b大部分由第一子像素电极190a包围,也就是说,第二子像素电极190b落入第一子像素电极190a中。第一子像素电极190a由上部梯形、下部梯形、以及在其左侧彼此相连的中部梯形形成。第一子像素190a具有一对切口(cutout)91a和91b,其从上部梯形的顶侧和下部梯形的底侧向其右侧延伸。切口91a在与第一栅极线121a接合的区域由两个彼此分离的子切口形成。第一子像素电极190a的中部梯形安装在第二子像素电极190b的凹底面中。第一子像素电极190a具有沿存储电极线131延伸的切口92,并且切口92在邻近数据线171的第一子像素电极190a的左侧具有用于像素的入口、以及从入口水平伸出的水平部分。切口92的入口具有一对与存储电极线131成约45°角的脚(leg)。在第一子像素电极190a和第二子像素电极190b之间的间隙94具有两对与第一栅极线121a和第二栅极线121b成约45°角的具有相同宽度的上部倾斜部分和下部倾斜部分、以及三个基本具有相同宽度的垂直部分。为了便于说明,间隙94也可称为切口。When the gap 94 is inserted, a pair of the first subpixel electrode 190a and the second subpixel electrode 190b forming one pixel electrode 190 are joined to each other, and the outer shape of the pixel electrode 190 is approximately rectangular. The shape of the second sub-pixel electrode 190b is a rotated equilateral trapezoid, which has a concave bottom surface of the trapezoid. The second subpixel electrode 190b is mostly surrounded by the first subpixel electrode 190a, that is, the second subpixel electrode 190b falls into the first subpixel electrode 190a. The first subpixel electrode 190a is formed of an upper trapezoid, a lower trapezoid, and a middle trapezoid connected to each other on the left side thereof. The first sub-pixel 190a has a pair of cutouts 91a and 91b extending from the top side of the upper trapezoid and the bottom side of the lower trapezoid to its right side. The cutout 91a is formed of two sub-cutouts separated from each other at a region joined to the first gate line 121a. The central trapezoid of the first subpixel electrode 190a is installed in the concave bottom surface of the second subpixel electrode 190b. The first sub-pixel electrode 190a has a slit 92 extending along the storage electrode line 131, and the slit 92 has an entrance for a pixel on the left side of the first sub-pixel electrode 190a adjacent to the data line 171, and a horizontally extending horizontally from the entrance. part. The entrance of the cutout 92 has a pair of legs forming an angle of about 45° with the storage electrode line 131 . The gap 94 between the first sub-pixel electrode 190a and the second sub-pixel electrode 190b has two pairs of upper inclined portions having the same width at an angle of about 45° to the first gate line 121a and the second gate line 121b and a lower sloping portion, and three vertical portions of substantially the same width. For ease of description, gap 94 may also be referred to as a cutout.

像素电极190具有切口91a、91b和92,并且通过切口91a、91b和92以及间隙94被分隔成多个区域。切口91a、91b和92倾斜地从像素电极190的左侧向其右侧延伸,并且与存储电极线131镜面对称。切口与栅极线121a和121b成约45°角。切口91a以及设置在像素电极190上半部分上的间隙94的倾斜部分基本上垂直于切口91b和设置在像素电极190下半部分上的间隙94的倾斜部分。The pixel electrode 190 has cutouts 91 a , 91 b and 92 , and is divided into a plurality of regions by the cutouts 91 a , 91 b and 92 and gaps 94 . The cutouts 91 a , 91 b and 92 obliquely extend from the left side to the right side of the pixel electrode 190 and are mirror-symmetrical to the storage electrode line 131 . The cutouts make an angle of about 45° with the gate lines 121a and 121b. The cutout 91 a and the inclined portion of the gap 94 disposed on the upper half of the pixel electrode 190 are substantially perpendicular to the cutout 91 b and the inclined portion of the gap 94 disposed on the lower half of the pixel electrode 190 .

由此,通过切口91a、91b和92以及间隙94将像素190的上半部分和下半部分分别分成四个区域。虽然已经说明和描述了特定的布置,但是分隔区域或切口的数量也可以根据设计因素而改变,例如像素尺寸、像素190的水平边到垂直边的长度比、以及液晶层3的类型或特性。Thus, the upper half and the lower half of the pixel 190 are respectively divided into four regions by the cutouts 91 a , 91 b , and 92 and the gap 94 . Although specific arrangements have been illustrated and described, the number of separation regions or cutouts may also vary depending on design factors such as pixel size, horizontal to vertical side length ratio of the pixel 190, and type or characteristics of the liquid crystal layer 3.

像素电极190与相邻的栅极线121重叠以增加开口率。The pixel electrode 190 overlaps the adjacent gate line 121 to increase the aperture ratio.

屏蔽电极88沿着数据线171和栅极线121b延伸,并且位于数据线171之上的部分完全覆盖数据线171。屏蔽电极88位于栅极线121b之上的部分位于栅极线121b的边界内,其具有小于栅极线121b的宽度。设置在相邻两个像素电极190之间的数据线171由屏蔽电极88完全覆盖。然而,可以控制屏蔽电极88的宽度,以使其小于数据线171的宽度,或者具有位于栅极线121b的边界外部的边界。向屏蔽电极88施加共电压。为此,屏蔽电极88通过钝化层180和栅极绝缘层140内的接触孔(未示出)连接至存储电极线131,或者连接至短路点(未示出),在此处,共电压从下部面板100施加给上部面板200。优选地使开口率最小化,以尽可能地缩短屏蔽电极88与像素电极190之间的距离。The shielding electrode 88 extends along the data line 171 and the gate line 121b, and a portion located above the data line 171 completely covers the data line 171 . A portion of the shield electrode 88 located above the gate line 121b is located within the boundary of the gate line 121b, which has a smaller width than the gate line 121b. The data line 171 disposed between two adjacent pixel electrodes 190 is completely covered by the shielding electrode 88 . However, the width of the shield electrode 88 may be controlled to be smaller than that of the data line 171, or to have a boundary outside the boundary of the gate line 121b. A common voltage is applied to the shield electrode 88 . For this, the shielding electrode 88 is connected to the storage electrode line 131 through a contact hole (not shown) in the passivation layer 180 and the gate insulating layer 140, or is connected to a short-circuit point (not shown), where the common voltage It is applied from the lower panel 100 to the upper panel 200 . The aperture ratio is preferably minimized to shorten the distance between the shield electrode 88 and the pixel electrode 190 as much as possible.

当接收共电压的屏蔽电极88位于数据线171之上时,屏蔽电极88屏蔽形成在数据线171与像素电极190之间以及数据线171与共电极270之间的电场,从而降低像素电极190的电压失真以及数据线171所传输的数据电压的信号延迟和失真。When the shielding electrode 88 receiving the common voltage is located above the data line 171, the shielding electrode 88 shields the electric field formed between the data line 171 and the pixel electrode 190 and between the data line 171 and the common electrode 270, thereby reducing the voltage of the pixel electrode 190. Distortion and signal delay and distortion of the data voltage transmitted by the data line 171 .

此外,像素电极190和屏蔽电极88应该彼此分开足够的距离,以防止其短路。因此,像素电极190从数据线171伸出足够远,从而减小它们之间的寄生电容。此外,由于液晶层3的介电常数高于钝化层180的介电常数,所以数据线171与屏蔽电极88之间的寄生电容小于在没有屏蔽电极88的情况下数据线171与共电极270之间的寄生电容。In addition, the pixel electrode 190 and the shield electrode 88 should be separated from each other by a sufficient distance to prevent short circuiting thereof. Therefore, the pixel electrode 190 protrudes far enough from the data line 171 to reduce the parasitic capacitance therebetween. In addition, since the dielectric constant of the liquid crystal layer 3 is higher than that of the passivation layer 180, the parasitic capacitance between the data line 171 and the shielding electrode 88 is smaller than that between the data line 171 and the common electrode 270 without the shielding electrode 88. the parasitic capacitance between them.

由于像素电极190和屏蔽电极88由同一层形成,它们之间的距离保持一致,因此它们之间的介电常数保持不变。Since the pixel electrode 190 and the shielding electrode 88 are formed of the same layer, the distance between them remains consistent, so the dielectric constant between them remains unchanged.

接触辅助件81a、81b和82分别通过接触孔181a、181b和182连接至栅极线121a和121b的端部129a和129b以及数据线171的端部179。接触辅助件81a、81b和82用来增强栅极线121a和121b的露出端部129a和129b以及数据线171的露出端部179与外部装置之间的附着力,并保护它们。The contact assistants 81a, 81b and 82 are connected to the end portions 129a and 129b of the gate lines 121a and 121b and the end portion 179 of the data line 171 through the contact holes 181a, 181b and 182, respectively. The contact assistants 81a, 81b, and 82 serve to enhance adhesion between the exposed end portions 129a and 129b of the gate lines 121a and 121b and the exposed end portion 179 of the data line 171 and external devices and protect them.

定向层(alignment layer)11形成在像素电极190、屏蔽电极88、接触辅助件81a、81b和82以及钝化层180上,以使液晶层3定向。定向层11可以为水平定向层。An alignment layer 11 is formed on the pixel electrode 190 , the shield electrode 88 , the contact assistants 81 a , 81 b and 82 , and the passivation layer 180 to align the liquid crystal layer 3 . The alignment layer 11 may be a horizontal alignment layer.

下面,将描述共电极面板200。Next, the common electrode panel 200 will be described.

遮光件220也被称为黑色矩阵,形成在基于透明玻璃或塑料的绝缘基板210上,以防止光的泄漏。遮光件220面向像素电极190并且具有多个与像素电极190形状相同的开口部分。可选地,遮光件220可由对应于数据线171的部分和对应于TFT Qa和Qb的部分形成。然而,遮光件220可形成有不同的形状,以防止像素电极190以及TFT Qa和Qb周围光的泄漏。The light blocking member 220, also called a black matrix, is formed on the insulating substrate 210 based on transparent glass or plastic to prevent leakage of light. The light blocking member 220 faces the pixel electrode 190 and has a plurality of opening portions having the same shape as the pixel electrode 190 . Alternatively, the light blocking member 220 may be formed of a portion corresponding to the data line 171 and a portion corresponding to the TFTs Qa and Qb. However, the light blocking member 220 may be formed in a different shape to prevent leakage of light around the pixel electrode 190 and the TFTs Qa and Qb.

多个滤色器230形成在基板210上。滤色器230大部分设置在由遮光件220包围的区域内,并且相对于像素电极190水平和垂直地延伸。滤色器230可呈现出红、绿、蓝的三种颜色中的一种,尽管其它颜色也在这些实施例的范围内。A plurality of color filters 230 are formed on the substrate 210 . The color filter 230 is mostly disposed in a region surrounded by the light blocking member 220 and extends horizontally and vertically with respect to the pixel electrode 190 . The color filter 230 may exhibit one of three colors of red, green, and blue, although other colors are within the scope of these embodiments.

覆盖层或保护层(overcoat)250形成在滤色器230和遮光件220上,以防止滤色器230露出,并且提供平坦的表面。覆盖层250可以由有机绝缘体制成。An overcoat or overcoat 250 is formed on the color filter 230 and the light blocking member 220 to prevent the color filter 230 from being exposed and to provide a flat surface. The capping layer 250 may be made of an organic insulator.

共电极270形成在覆盖层250上,其由透明导电材料形成,例如,但不限定于ITO和IZO。The common electrode 270 is formed on the capping layer 250 and is formed of a transparent conductive material such as, but not limited to, ITO and IZO.

共电极270具有多组切口271-274b。The common electrode 270 has multiple sets of cutouts 271-274b.

每组切口271-274b均面向一个像素电极190,并且包括中部切口271和272、上部切口273a和274a、以及下部切口273b和274b。切口271-274b设置在共电极270上,对应于相邻像素电极190的切口91a、91b、92和94之间的位置以及像素电极190的脚和周围切口91a和91b之间的位置。此外,各个切口271-274b均包括至少一个平行于像素电极190的切口91a、91b、92和间隙94延伸的倾斜部分。Each set of cutouts 271-274b faces one pixel electrode 190, and includes middle cutouts 271 and 272, upper cutouts 273a and 274a, and lower cutouts 273b and 274b. The cutouts 271-274b are disposed on the common electrode 270 corresponding to positions between the cutouts 91a, 91b, 92 and 94 of adjacent pixel electrodes 190 and between the legs of the pixel electrode 190 and the surrounding cutouts 91a and 91b. In addition, each of the cutouts 271 - 274 b includes at least one inclined portion extending parallel to the cutouts 91 a , 91 b , 92 and the gap 94 of the pixel electrode 190 .

下部切口和上部切口273a-274b包括倾斜部分、水平和垂直部分,该倾斜部分沿共电极270从对应于像素电极190右侧的位置向其下侧和上侧延伸,并且当水平和垂直部分与像素电极的侧面重叠并相对于倾斜部分成钝角时,其从对应于倾斜部分的各个端部的位置沿像素电极190的侧面伸出。The lower and upper cutouts 273a-274b include inclined portions, horizontal and vertical portions, which extend along the common electrode 270 from a position corresponding to the right side of the pixel electrode 190 to its lower and upper sides, and when the horizontal and vertical portions are aligned with When the sides of the pixel electrode overlap and form an obtuse angle with respect to the inclined portion, they protrude along the side of the pixel electrode 190 from positions corresponding to respective ends of the inclined portion.

第一中部切口271具有中心水平部分,其位于共电极270上,从对应于像素电极190的左侧的位置水平伸出;一对倾斜部分,当相对于中心水平部分倾斜时,从对应于中心水平部分的端部的位置向像素电极190的左侧伸出;以及垂直端部,当与像素电极190的左侧重叠并与倾斜部分成钝角时,从对应于倾斜部分的端部的位置伸出。第二中部切口272包括垂直部分,其位于共电极270上,当与第二子像素电极重叠时,沿对应于第二子像素电极190b的右侧的位置延伸;一对倾斜部分,从对应于垂直部分的各个端部的位置向像素电极190的左侧伸出;以及垂直端部,当与第二子像素电极重叠重叠并与倾斜部分成钝角时,从对应于倾斜部分的端部的位置沿第二子像素电极190b的左侧伸出。The first middle cutout 271 has a central horizontal portion, which is located on the common electrode 270, and protrudes horizontally from a position corresponding to the left side of the pixel electrode 190; The position of the end of the horizontal portion protrudes toward the left side of the pixel electrode 190; out. The second middle cutout 272 includes a vertical portion, which is located on the common electrode 270, and extends along a position corresponding to the right side of the second sub-pixel electrode 190b when overlapping with the second sub-pixel electrode; The position of each end of the vertical portion protrudes to the left side of the pixel electrode 190; protrudes along the left side of the second sub-pixel electrode 190b.

三角形的凹口(notch)形成在切口271-274b的倾斜部分。可选地,每个凹口的形状可为矩形、梯形、或者半圆形的形状,并且可以凸起或者凹入。凹口决定位于对应切口271-274b区域的边缘的液晶分子3的排列。Triangular notches are formed at inclined portions of the cutouts 271-274b. Optionally, the shape of each notch may be rectangular, trapezoidal, or semicircular, and may be convex or concave. The notches determine the alignment of the liquid crystal molecules 3 located at the edges of the regions corresponding to the notches 271-274b.

虽然已经说明和描述了特定的布置,但是切口271-274b的数量可以根据设计因素而改变,并且遮光件220可与切口271-274b重叠,以防止切口271-274b周围的光泄漏。Although a particular arrangement has been illustrated and described, the number of cutouts 271-274b may vary depending on design factors, and the light shield 220 may overlap the cutouts 271-274b to prevent light leakage around the cutouts 271-274b.

由于将相同的电压施加给共电极270和屏蔽电极88,共电极270和屏蔽电极88之间不存在电场。因此,设置在共电极270与屏蔽电极88之间的液晶分子持续地保持其最初的垂直排列状态,并且截断入射至此的光。Since the same voltage is applied to the common electrode 270 and the shield electrode 88 , there is no electric field between the common electrode 270 and the shield electrode 88 . Therefore, the liquid crystal molecules disposed between the common electrode 270 and the shield electrode 88 continuously maintain their original vertically aligned state, and block light incident thereto.

将定向层21涂布在共电极270和覆盖层250上,以使液晶层3定向。定向层21可以为水平定向层。The alignment layer 21 is coated on the common electrode 270 and the cover layer 250 to align the liquid crystal layer 3 . The alignment layer 21 may be a horizontal alignment layer.

偏振板(polarizing plate)12和22设置在面板100和200的外表面上,并且两个偏振板12和22的透光轴彼此垂直。两个偏振板12和22中的一个透光轴(或者光吸收轴)沿水平方向延长。在反射型LCD的情况下,可省略两个偏振板12和22中的一个。Polarizing plates 12 and 22 are disposed on outer surfaces of the panels 100 and 200, and light transmission axes of the two polarizing plates 12 and 22 are perpendicular to each other. One light transmission axis (or light absorption axis) of the two polarizing plates 12 and 22 is extended in the horizontal direction. In the case of a reflective LCD, one of the two polarizing plates 12 and 22 may be omitted.

液晶层3具有负的介电各向异性,并且在未施加电压时,液晶层3的液晶分子具有相对于两个面板表面垂直排列的定向(director)。The liquid crystal layer 3 has negative dielectric anisotropy, and when no voltage is applied, the liquid crystal molecules of the liquid crystal layer 3 have a director aligned vertically with respect to both panel surfaces.

当将共电极施加给共电极270并且将数据电压施加给像素电极190时,产生几乎垂直于面板100和200表面的电场。电极190和270的切口91a-94和271-274b破坏该电场,并且形成与切口91a-94和271-274b的侧面垂直的分量。When the common electrode is applied to the common electrode 270 and the data voltage is applied to the pixel electrode 190, an electric field almost perpendicular to the surfaces of the panels 100 and 200 is generated. The cutouts 91a-94 and 271-274b of the electrodes 190 and 270 disrupt this electric field and form components perpendicular to the sides of the cutouts 91a-94 and 271-274b.

由此,电场相对于垂直于面板100和200表面的方向倾斜。液晶分子响应电场排列,以使其定向垂直于电场。这时,形成在切口91a-94和271-274b以及像素电极190的侧面周围的电场没有平行于液晶分子的定向,而是与它们成预定的角度。因此,液晶分子在位于定向与在该方向上的电场之间的面板上转动很短的移动距离。由此,一组切口91a-94和271-274b以及像素电极190的侧面将位于像素电极190上的液晶层3分成多个区域(domain),在其中,液晶分子的倾斜方向彼此不同,因此增大了基准视角。Thus, the electric field is inclined with respect to the direction perpendicular to the surfaces of the panels 100 and 200 . Liquid crystal molecules align in response to an electric field so that their orientation is perpendicular to the electric field. At this time, the electric field formed around the cutouts 91a-94 and 271-274b and the sides of the pixel electrode 190 is not parallel to the orientation of the liquid crystal molecules but at a predetermined angle thereto. Therefore, the liquid crystal molecules turn a short moving distance on the panel between the orientation and the electric field in that direction. Thus, a group of cutouts 91a-94 and 271-274b and the side faces of the pixel electrode 190 divide the liquid crystal layer 3 on the pixel electrode 190 into a plurality of domains, in which the tilt directions of the liquid crystal molecules are different from each other, thereby increasing the number of domains. Increased baseline viewing angle.

切口91a-94和271-274b中的至少一个可以被突起或者凹的部分代替,并且可以改变切口91a-94和271-274b的形状和设置。At least one of the cutouts 91a-94 and 271-274b may be replaced by a protruding or concave portion, and the shape and arrangement of the cutouts 91a-94 and 271-274b may be changed.

下面,将参照附图7和8进一步描述根据本发明的LCD的示例性实施例的示例性栅极短路棒。Hereinafter, an exemplary gate shorting bar according to an exemplary embodiment of an LCD of the present invention will be further described with reference to FIGS. 7 and 8 .

图7是图1所示LCD示例性实施例的示例性栅极短路棒的放大图,图8是沿图7的VIII-VIII’线截取的LCD示例性实施例的横截面图。7 is an enlarged view of an exemplary gate shorting bar of the exemplary embodiment of the LCD shown in FIG. 1, and FIG. 8 is a cross-sectional view of the exemplary embodiment of the LCD taken along line VIII-VIII' of FIG.

栅极焊盘PG1a-PGnb形成在绝缘基板110上,并且基于与栅极线121a和121b相同的材料的栅极延伸线321a、321b、322a、322b、...从栅极焊盘PG1a-PGnb水平伸出。栅极焊盘PG1a-PGnb以及栅极延伸线321a、321b、322a、322b、...可在与栅极线121a和121b相同的制造工艺过程中形成。栅极绝缘层140形成在其上,并且当沿垂直方向延长时,栅极短路棒320a和320b由与数据线171相同的材料形成在栅极绝缘层140上。栅极短路棒320a和320b可在与数据线171相同的制造工艺过程中形成。钝化层180形成在栅极短路棒320a和320b上。Gate pads PG1a-PGnb are formed on the insulating substrate 110, and gate extension lines 321a, 321b, 322a, 322b, . Extend horizontally. The gate pads PG1a-PGnb and the gate extension lines 321a, 321b, 322a, 322b, . . . may be formed in the same manufacturing process as the gate lines 121a and 121b. A gate insulating layer 140 is formed thereon, and when elongated in a vertical direction, gate short bars 320a and 320b are formed of the same material as the data line 171 on the gate insulating layer 140 . The gate short bars 320 a and 320 b may be formed during the same manufacturing process as the data line 171 . A passivation layer 180 is formed on the gate short bars 320a and 320b.

用于露出第一栅极短路棒320a的接触孔351a、352a、...以及用于露出第二栅极短路棒320b的接触孔351b、352b、...通过钝化层180形成。用于露出栅极延伸线321a、321b、322a、322b、...的接触孔361a、361b、362a、362b、...通过钝化层180和栅极绝缘层140形成。Contact holes 351 a , 352 a , . . . for exposing the first gate shorting bar 320 a and contact holes 351 b , 352 b , . . . for exposing the second gate shorting bar 320 b are formed through the passivation layer 180 . Contact holes 361 a , 361 b , 362 a , 362 b , . . . for exposing the gate extension lines 321 a , 321 b , 322 a , 322 b , .

连接器341a、341b、342a、342b、...由ITO或IZO形成在钝化层180上。连接器341a、341b、342a、342b、...可在与像素电极190相同的制造工艺过程中形成。第一连接器341a、342a、...通过第一接触孔351a和361a以及352a和362a、...将第一栅极短路棒320a分别物理-电连接至第一栅极延伸线321a、322a、...。第二连接器341b、342b、...通过第二接触孔351b和361b以及352b和362b、...将第二栅极短路棒320b分别物理-电连接至第二栅极延伸线321b、322b、...。The connectors 341a, 341b, 342a, 342b, . . . are formed of ITO or IZO on the passivation layer 180 . The connectors 341a, 341b, 342a, 342b, . . . may be formed during the same manufacturing process as the pixel electrode 190 . The first connectors 341a, 342a, ... physically-electrically connect the first gate shorting bar 320a to the first gate extension lines 321a, 322a through the first contact holes 351a and 361a and 352a and 362a, ... respectively. ,... The second connectors 341b, 342b, ... physically-electrically connect the second gate shorting bar 320b to the second gate extension lines 321b, 322b through the second contact holes 351b and 361b and 352b and 362b, ... respectively. ,...

同时,栅极延伸线321a、321b、322a、322b、...可在栅极短路棒320a和320b之上延伸,并到达防静电辅助线(static preventionsubsidiary line,未示出),并且连接到此。Meanwhile, grid extension lines 321a, 321b, 322a, 322b, . .

将参照图9和10描述根据本发明的LCD的示例性实施例的阵列测试和VI测试。An array test and a VI test of an exemplary embodiment of an LCD according to the present invention will be described with reference to FIGS. 9 and 10 .

图9是根据本发明的LCD的示例性实施例的示例性测试波形图,图10示出根据本发明的LCD的示例性实施例的示例性像素的极性。FIG. 9 is an exemplary test waveform diagram of an exemplary embodiment of an LCD according to the present invention, and FIG. 10 illustrates polarities of exemplary pixels of an exemplary embodiment of an LCD according to the present invention.

如图9所示,以T2为周期,向栅极短路棒320a和320b施加栅极测试信号Vga和Vgb。栅极测试信号Vga和Vgb包括180°的相位差(phase difference)。以T2为周期,交替地向数据短路棒310施加正数据电压V+和负数据电压V-。正负极性表示数据电压Vdata相对于共电压Vcom的极性,并且正数据电压V+和负数据电压V-的大小相等,或者至少基本上相等。换句话说,正数据电压V+和负数据电压V-均具有相同或者基本上相同的偏离共电压Vcom的量。在施加正数据电压V+的情况下,施加第一栅极测试信号Vga,以开启第一开关元件Qa。在施加负数据电压V-的情况下,施加第二栅极测试信号Vgb,以开启第二开关元件Qb。As shown in FIG. 9 , the gate test signals Vga and Vgb are applied to the gate shorting bars 320 a and 320 b with a period of T2 . The gate test signals Vga and Vgb include a phase difference of 180°. Taking T2 as a period, a positive data voltage V+ and a negative data voltage V− are alternately applied to the data short bar 310 . The positive and negative polarities represent the polarity of the data voltage Vdata relative to the common voltage Vcom, and the positive data voltage V+ and the negative data voltage V− are equal in magnitude, or at least substantially equal. In other words, both the positive data voltage V+ and the negative data voltage V− have the same or substantially the same amount of deviation from the common voltage Vcom. In the case of applying the positive data voltage V+, the first gate test signal Vga is applied to turn on the first switching element Qa. In the case of applying the negative data voltage V-, the second gate test signal Vgb is applied to turn on the second switching element Qb.

随后,如图10所示,在第一子像素电极190a充有正像素电压,并且在第二子像素电极190b充有负像素电压。在第一子像素电极190a和第二子像素电极190b分别连续地提供正像素电压和负像素电压。Subsequently, as shown in FIG. 10, the first sub-pixel electrode 190a is charged with a positive pixel voltage, and the second sub-pixel electrode 190b is charged with a negative pixel voltage. A positive pixel voltage and a negative pixel voltage are continuously supplied to the first sub-pixel electrode 190a and the second sub-pixel electrode 190b, respectively.

然而,如图10的上部右侧上的像素所示,在夹置电桥ST1的第一子像素电极和第二子像素电极交替地充有与图9中所示的电压VPST1一样的正像素电压和负像素电压。由此,图10中所示的电桥ST1、或者位于每个像素的第一子像素与第二子像素之间的任何其它电桥均可以通过阵列测试检测各个子像素电极的极性来很容易地识别。However, as shown in the pixel on the upper right side of FIG. 10, the first subpixel electrode and the second subpixel electrode of the sandwich bridge ST1 are alternately charged with the same positive voltage V PST1 as shown in FIG. pixel voltage and negative pixel voltage. Thus, the bridge ST1 shown in FIG. 10, or any other bridge located between the first subpixel and the second subpixel of each pixel, can be easily detected by array testing to detect the polarity of the electrodes of each subpixel. easily identifiable.

同时,当适当地控制栅极测试信号Vga和Vgb的脉冲宽度,以降低数据电压的充电速度时,在具有电桥的第一子像素电极和第二子像素电极充有小于正数据电压V+和负数据电压V-的电压。换句话说,在具有电桥的第一子像素电极和第二子像素电极所充的电压的大小小于正数据电压V+和负数据电压V-的大小。然而,由于将正数据电压V+和负数据电压V-持续施加给正常的第一子像素电极和第二子像素电极,所以在那里维持与正数据电压V+和负数据电压V-相同的电压。由此,通过VI测试检测像素与其它像素亮度的不同,可以很容易地识别第一子像素电极190a与第二子像素电极190b之间的电桥。At the same time, when the pulse width of the gate test signals Vga and Vgb is properly controlled to reduce the charging speed of the data voltage, the first sub-pixel electrode and the second sub-pixel electrode with the bridge are charged with less than the positive data voltage V+ and The voltage of the negative data voltage V-. In other words, the magnitude of the voltage charged on the first sub-pixel electrode and the second sub-pixel electrode with the bridge is smaller than the magnitude of the positive data voltage V+ and the negative data voltage V−. However, since the positive data voltage V+ and the negative data voltage V− are continuously applied to the normal first and second subpixel electrodes, the same voltage as the positive data voltage V+ and the negative data voltage V− is maintained there. Therefore, by detecting the brightness difference between the pixel and other pixels through the VI test, the electric bridge between the first sub-pixel electrode 190 a and the second sub-pixel electrode 190 b can be easily identified.

如果在第一子像素电极190a与屏蔽电极88之间形成电桥,并且向屏蔽电极88施加共电压Vcom,那么在第一像素电极190a不会充有正常的正像素电压。由此,通过VI测试和阵列测试,可以很容易地识别在第一子像素电极190a与屏蔽电极88之间电桥的存在。If a bridge is formed between the first subpixel electrode 190a and the shielding electrode 88, and the common voltage Vcom is applied to the shielding electrode 88, the first pixel electrode 190a will not be charged with a normal positive pixel voltage. Thus, through the VI test and the array test, the existence of the bridge between the first sub-pixel electrode 190a and the shielding electrode 88 can be easily identified.

将参照图11至14进一步描述根据本发明的LCD的另一示例性实施例及其测试方法。Another exemplary embodiment of an LCD according to the present invention and a testing method thereof will be further described with reference to FIGS. 11 to 14 .

图11是根据本发明的LCD的另一示例性实施例的示意图,并且图12是图11所示LCD的示例性实施例的示例性栅极短路棒的放大图。图13是根据本发明的LCD的另一示例性实施例的测试波形图,图14示出根据本发明LCD的另一示例性实施例的示例性像素的极性。FIG. 11 is a schematic diagram of another exemplary embodiment of an LCD according to the present invention, and FIG. 12 is an enlarged view of an exemplary gate short bar of the exemplary embodiment of the LCD shown in FIG. 11 . FIG. 13 is a test waveform diagram of another exemplary embodiment of an LCD according to the present invention, and FIG. 14 shows polarities of exemplary pixels according to another exemplary embodiment of an LCD of the present invention.

参照图11至14所描述的LCD的示例性实施例与前一实施例的LCD非常相似,因此,只对与前一实施例不同的部分进行进一步地描述。The exemplary embodiment of the LCD described with reference to FIGS. 11 to 14 is very similar to the LCD of the previous embodiment, and thus, only the parts different from the previous embodiment will be further described.

如图11所示,位于LX线内部的LCD的部分与前一实施例的LCD的部分基本相同。对于根据本实施例的LCD,省略了图4中所示的屏蔽电极88,因此,第一像素电极190a和第二像素电极190b可与数据线171重叠,由此提高了其开口率。As shown in FIG. 11, the portion of the LCD located inside the LX line is substantially the same as that of the previous embodiment. For the LCD according to the present embodiment, the shielding electrode 88 shown in FIG. 4 is omitted, and thus, the first pixel electrode 190a and the second pixel electrode 190b may overlap the data line 171, thereby increasing the aperture ratio thereof.

此外,根据本实施例的数据短路棒310与根据前一实施例的数据短路棒相同。然而,根据本实施例的LCD包括四个连接至栅极焊盘PG1a-PGnb的栅极短路棒420a-420d,而不是前一实施例中的两个栅极短路棒320a和320b。In addition, the data shorting bar 310 according to the present embodiment is the same as the data shorting bar according to the previous embodiment. However, the LCD according to the present embodiment includes four gate shorting bars 420a-420d connected to the gate pads PG1a-PGnb instead of the two gate shorting bars 320a and 320b in the previous embodiment.

栅极焊盘PG1a-PGnb顺序连接至四个栅极短路棒420a-420d。也就是说,栅极焊盘PG1a、PG1b、PG2a和PG2b通过栅极延伸线421a、421b、421c和421d分别连接至栅极短路棒420a、420b、420c和420d。下一组栅极焊盘PG3a、...通过栅极延伸线422a、...以同样的方式分别连接至栅极短路棒420a、420b、420c和420d,对于剩余的栅极焊盘PG也如此进行。The gate pads PG1a-PGnb are sequentially connected to the four gate shorting bars 420a-420d. That is, the gate pads PG1a, PG1b, PG2a and PG2b are respectively connected to the gate short bars 420a, 420b, 420c and 420d through the gate extension lines 421a, 421b, 421c and 421d. The next group of gate pads PG3a, . so proceed.

如图12所示,除了栅极短路棒420a-420d的数量增加到四个以及其与栅极焊盘PG1a-PGnb的连接顺序不同以外,栅极短路棒420a-420d以及栅极延伸线的互连结构与图7和8中所示栅极短路棒320a和320b以及栅极延伸线的互连结构基本相同。换句话说,每条第四栅极延伸线连接至相同的栅极短路棒。As shown in FIG. 12 , except that the number of gate shorting bars 420a-420d is increased to four and the connection sequence with gate pads PG1a-PGnb is different, the interconnection of gate shorting bars 420a-420d and gate extension lines The interconnection structure is basically the same as the interconnection structure of the gate shorting bars 320a and 320b and the gate extension lines shown in FIGS. 7 and 8 . In other words, each fourth gate extension line is connected to the same gate shorting bar.

如图13所示,以T4为周期,向栅极短路棒420a-420d施加栅极测试信号Vga-Vgd,由此向栅极线施加该栅极测试信号。栅极测试信号Vga-Vgd包括90°的相位差。以T4为周期,交替地向数据短路棒310施加正数据电压V+和负数据电压V-,由此,向数据线施加该正数据电压和负数据电压。As shown in FIG. 13 , with a period of T4 , gate test signals Vga-Vgd are applied to the gate short bars 420 a - 420 d, thereby applying the gate test signals to the gate lines. The gate test signals Vga-Vgd include a phase difference of 90°. Taking T4 as a period, the positive data voltage V+ and the negative data voltage V− are alternately applied to the data short bar 310 , thereby applying the positive data voltage and the negative data voltage to the data lines.

在向数据线施加正数据电压V+和负数据电压V-的情况下,将第一栅极测试信号Vga和第四栅极测试信号Vgd施加给栅极线,以开启在奇数像素行的第一开关元件Qa和在偶数像素行的第二开关元件Qb,而在向数据线施加负数据电压V-的情况下,将第二栅极测试信号Vgb和第三栅极测试信号Vgc施加给栅极线,以开启在奇数像素行的第二开关元件Qb和在偶数像素行的第一开关元件Qa。In the case of applying positive data voltage V+ and negative data voltage V- to the data line, the first gate test signal Vga and the fourth gate test signal Vgd are applied to the gate line to turn on the first The switching element Qa and the second switching element Qb in the even pixel row, while applying the negative data voltage V- to the data line, the second gate test signal Vgb and the third gate test signal Vgc are applied to the gate line to turn on the second switching element Qb in the odd pixel row and the first switching element Qa in the even pixel row.

随后,如图14所示,在奇数像素行的第一子像素电极190a充有正像素电压,并且在奇数像素行的第二子像素电极190b充有负像素电压。此外,在偶数像素行的第一子像素电极190a充有负像素电压,并且在偶数像素行的第二子像素电极190b充有正像素电压。在没有任何电桥夹置于其上的各个子像素电极190a和190b持续地维持曾经所充的正像素电压或负像素电压。Subsequently, as shown in FIG. 14, the first sub-pixel electrodes 190a in odd pixel rows are charged with positive pixel voltages, and the second sub-pixel electrodes 190b in odd pixel rows are charged with negative pixel voltages. In addition, the first subpixel electrodes 190a in the even pixel rows are charged with a negative pixel voltage, and the second subpixel electrodes 190b in the even pixel rows are charged with a positive pixel voltage. Each of the sub-pixel electrodes 190a and 190b without any bridge sandwiched thereon maintains the once-charged positive pixel voltage or negative pixel voltage continuously.

然而,如图14的右边顶部所示,在夹置电桥ST2的相邻像素中的两个第一子像素电极190a交替地充有与图13中所示的电压VPST2一样的正电压和负电压。此外,如图14的右边底部所示,在夹置电桥ST3的相同像素中的第一子像素电极190a和第二子像素电极190b交替地充有与图13中所示的电压VPST3一样的正电压和负电压。由此,如图14所示的电桥ST3或者可在每个像素的第一子像素电极190a与第二子像素电极190b之间存在的任何其它电桥、以及如图14所示的电桥ST2或者相邻两个第一子像素电极190a之间存在的任何其它电桥都可以通过阵列测试检测各个子像素电极的极性来很容易地识别。However, as shown on the right top of FIG. 14, the two first subpixel electrodes 190a in adjacent pixels sandwiching the bridge ST2 are alternately charged with the same positive voltage as the voltage V PST2 shown in FIG. negative voltage. In addition, as shown in the right bottom of FIG. 14, the first subpixel electrode 190a and the second subpixel electrode 190b in the same pixel sandwiching the bridge ST3 are alternately charged with the same voltage V PST3 as shown in FIG. positive and negative voltages. Thus, the bridge ST3 shown in FIG. 14 or any other bridge that may exist between the first subpixel electrode 190a and the second subpixel electrode 190b of each pixel, and the bridge ST3 shown in FIG. 14 ST2 or any other bridge existing between two adjacent first sub-pixel electrodes 190a can be easily identified by detecting the polarity of each sub-pixel electrode through an array test.

当适当地控制栅极测试信号Vga-Vgd的脉冲宽度T3,以降低数据电压的充电速度时,在具有电桥的两个第一子像素电极190a充有小于正数据电压V+和负数据电压V-的电压,并且在具有电桥的第一子像素电极190a和第二子像素电极190b也充有小于正数据电压V+和负数据电压V-的电压。换句话说,在具有电桥的第一子像素电极和第二子像素电极所充的电压的大小小于正数据电压V+和负数据电压V-的大小。由此,通过VI测试检测像素与其它像素亮度的不同,可以很容易地识别第一子像素电极190a之间以及第一子像素190a与第二子像素电极190b之间任何其它的电桥。When the pulse width T3 of the gate test signal Vga-Vgd is properly controlled to reduce the charging speed of the data voltage, the two first sub-pixel electrodes 190a with the bridge are charged with voltages less than the positive data voltage V+ and the negative data voltage V -, and the first sub-pixel electrode 190a and the second sub-pixel electrode 190b with the bridge are also charged with a voltage lower than the positive data voltage V+ and the negative data voltage V-. In other words, the magnitude of the voltage charged on the first sub-pixel electrode and the second sub-pixel electrode with the bridge is smaller than the magnitude of the positive data voltage V+ and the negative data voltage V−. Thus, any other electrical bridges between the first sub-pixel electrodes 190a and between the first sub-pixel electrodes 190a and the second sub-pixel electrodes 190b can be easily identified by detecting the brightness difference between the pixel and other pixels through the VI test.

虽然,已经描述了根据本发明的LCD的示例性实施例具有一个数据短路棒,应该可以理解,LCD可选地包括多个数据短路棒,例如两个或者三个数据短路棒。如同包括多个栅极短路棒的LCD的实施例,也可以在具有多个数据短路棒的LCD的实施例中进行阵列测试和VI测试。Although the exemplary embodiment of the LCD according to the present invention has been described as having one data shorting bar, it should be understood that the LCD may optionally include a plurality of data shorting bars, such as two or three data shorting bars. As with the embodiment of the LCD including multiple gate shorting bars, array testing and VI testing can also be performed in the embodiment of the LCD having multiple data shorting bars.

下面,将参照图15和16描述根据本发明的LCD的另一示例性实施例。Next, another exemplary embodiment of an LCD according to the present invention will be described with reference to FIGS. 15 and 16 .

图15是根据本发明的LCD的另一示例性实施例的示意图,图16是根据本发明的LCD的另一示例性实施例的示例性像素的等效电路图。FIG. 15 is a schematic diagram of another exemplary embodiment of an LCD according to the present invention, and FIG. 16 is an equivalent circuit diagram of an exemplary pixel of another exemplary embodiment of an LCD according to the present invention.

如图15所示,LCD包括液晶面板组件,从等效电路的角度观察,该面板组件包括多条显示信号线G1-Gn和D1a-Dmb以及多个连接至显示信号线并以矩阵形式排列的像素PX。As shown in FIG. 15, the LCD includes a liquid crystal panel assembly. From the perspective of an equivalent circuit, the panel assembly includes a plurality of display signal lines G1-Gn and D1a-Dmb and a plurality of display signal lines connected to the display signal lines and arranged in a matrix. pixel px.

显示信号线G1-Gn和D1a-Dmb包括多条用于传输栅极信号的栅极线G1-Gn和多条用于传输数据信号的数据线D1a-Dmb。栅极线G1-Gn沿像素行的方向延伸,其在第一方向基本上互相平行,并且数据线D1a-Dmb沿像素列的方向延伸,其在第二方向基本上互相平行。第一方向可基本上垂直于第二方向。The display signal lines G1-Gn and D1a-Dmb include a plurality of gate lines G1-Gn for transmitting gate signals and a plurality of data lines D1a-Dmb for transmitting data signals. The gate lines G1-Gn extend along the direction of pixel rows, which are substantially parallel to each other in a first direction, and the data lines D1a-Dmb extend along the direction of pixel columns, which are substantially parallel to each other in a second direction. The first direction may be substantially perpendicular to the second direction.

液晶面板组件包括分别连接至栅极线G1-Gn的栅极焊盘PG1-PGn和分别连接至数据线D1a-Dmb的数据焊盘PD1a-PDmb,以使每条栅极线G1-Gn均连接至一个栅极焊盘PG,并且每条数据线D1a-Dmb均连接至一个数据焊盘PD。栅极短路棒320以及数据短路棒310a和310b分别连接至栅极线G1-Gn和数据线D1a-Dmb。The liquid crystal panel assembly includes gate pads PG1-PGn respectively connected to the gate lines G1-Gn and data pads PD1a-PDmb respectively connected to the data lines D1a-Dmb so that each gate line G1-Gn is connected to one gate pad PG, and each data line D1a-Dmb is connected to one data pad PD. The gate shorting bar 320 and the data shorting bars 310a and 310b are respectively connected to the gate lines G1-Gn and the data lines D1a-Dmb.

栅极短路棒320通过栅极延伸线321、322...连接至栅极焊盘PG1、PG2、...。由此,各条栅极线G1-Gn通过栅极短路棒320彼此连接。栅极短路棒320可基本上垂直于栅极线G1-Gn并基本上平行于数据线D1a-Dmb延伸。The gate short bar 320 is connected to the gate pads PG1 , PG2 , . . . through gate extension lines 321 , 322 . . . Thus, the respective gate lines G1 -Gn are connected to each other through the gate short bar 320 . The gate short bar 320 may extend substantially perpendicular to the gate lines G1-Gn and substantially parallel to the data lines D1a-Dmb.

第一数据短路棒310a通过第一数据延伸线311a、312a、313a、...连接至第一数据焊盘PD 1a、PD2a、PD3a、...,并且第二数据短路棒310b通过第二数据延伸线311b、312b、...连接至第二栅极焊盘PD1b、PD2b、...。由此,各条第一数据线D1a-Dma通过数据短路棒310a彼此连接,并且各条第二数据线D1b-Dmb通过数据短路棒彼此连接。数据短路棒310a和310b可基本垂直于数据线D1a-Dmb并基本上平行于栅极线G1-Gn延伸。The first data short bar 310a is connected to the first data pads PD1a, PD2a, PD3a, ... through the first data extension lines 311a, 312a, 313a, ..., and the second data short bar 310b is passed through the second data The extension lines 311b, 312b, . . . are connected to the second gate pads PD1b, PD2b, . . . Thus, each of the first data lines D1a-Dma is connected to each other through the data shorting bar 310a, and each of the second data lines D1b-Dmb is connected to each other through the data shorting bar. The data short bars 310a and 310b may extend substantially perpendicular to the data lines D1a-Dmb and substantially parallel to the gate lines G1-Gn.

在栅极短路棒320和数据短路棒310a和310b的端部设置单独的焊盘(未示出),以施加各种测试信号,以下将对其进行进一步的描述。Separate pads (not shown) are provided at the ends of the gate shorting bar 320 and the data shorting bars 310 a and 310 b to apply various test signals, which will be further described below.

在栅极短路棒320以及数据短路棒310a和310b经过若干测试之后,将它们沿LX线去除。也就是说,保留LX边缘的内部中的元件用于LCD,并且去除LX边缘外部的元件,例如栅极短路棒320以及数据短路棒310a和310b。因此,通过去除短路棒320、310a和310b,栅极线G1-Gn和数据线D1a-Dmb彼此分离。栅极驱动器(未示出)和数据驱动器(未示出)作为外部装置连接至栅极焊盘PG1-PGn和数据焊盘PD1a-PDmb,以向栅极线G1-Gn和数据线D1a-Dmb施加栅极信号和数据信号。然而,在将栅极驱动器集成在液晶面板组件上的情况下,可以省略栅极焊盘,并且栅极延伸线321、322...从栅极驱动器伸出。After the gate shorting bar 320 and the data shorting bars 310a and 310b have undergone several tests, they are removed along the LX line. That is, elements in the interior of the LX edge are retained for the LCD, and elements outside the LX edge, such as the gate shorting bar 320 and the data shorting bars 310a and 310b, are removed. Accordingly, the gate lines G1-Gn and the data lines D1a-Dmb are separated from each other by removing the shorting bars 320, 310a, and 310b. A gate driver (not shown) and a data driver (not shown) are connected to the gate pads PG1-PGn and the data pads PD1a-PDmb as external devices to supply the gate lines G1-Gn and the data lines D1a-Dmb Apply gate and data signals. However, in the case of integrating the gate driver on the liquid crystal panel assembly, the gate pad may be omitted, and the gate extension lines 321, 322, . . . protrude from the gate driver.

图16示出显示信号线和位于一个示例性像素PX的等效电路图。显示信号线包括由GL表示的栅极线、由DLa和DLb表示的数据线、以及基本上平行于栅极线GL延长的存储电极线SL。因此,与每个像素包括两条栅极线GLa和GLb以及单一一条数据线DL的前一实施例相比,本实施例的每个像素包括单一一条栅极线GL和一对数据线DLa和DLb。FIG. 16 shows a display signal line and an equivalent circuit diagram at one exemplary pixel PX. The display signal lines include gate lines denoted by GL, data lines denoted by DLa and DLb, and storage electrode lines SL extending substantially parallel to the gate lines GL. Therefore, compared with the previous embodiment in which each pixel includes two gate lines GLa and GLb and a single data line DL, each pixel of this embodiment includes a single gate line GL and a pair of data lines DLa and DLb.

各个像素PX均包括一对子像素PXc和PXd,并且每个PXc和PXd均包括连接至相应栅极线GL和数据线DLa和DLb的开关元件Qc和Qd、以及连接至那些开关元件的液晶电容器CLCc和CLCd与存储电容器CSTc和CSTd。在可选实施例中,可以省略存储电容器CSTc和CSTd,并且在这种情况下,可以省略存储电极线SL。Each pixel PX includes a pair of subpixels PXc and PXd, and each of PXc and PXd includes switching elements Qc and Qd connected to the corresponding gate line GL and data lines DLa and DLb, and liquid crystal capacitors connected to those switching elements. C LCc and C LCd and storage capacitors C STc and C STd . In alternative embodiments, the storage capacitors C STc and C STd may be omitted, and in this case, the storage electrode line SL may be omitted.

如图15和16所示,所有的栅极线GL连接至栅极短路棒320,所有的第一数据线DLa连接至第一数据短路棒310a,并且所有的第二数据线DLb连接至第二数据短路棒。由此,可以将相同的信号施加给各个第一子像素PXc,并且可以将相同的信号施加给各个第二子像素PXd,该信号与施加给第一子像素PXc的信号不同。As shown in FIGS. 15 and 16, all gate lines GL are connected to the gate shorting bar 320, all first data lines DLa are connected to the first data shorting bar 310a, and all second data lines DLb are connected to the second Data shorting bar. Thereby, the same signal, which is different from the signal applied to the first subpixel PXc, may be applied to each first subpixel PXc, and the same signal may be applied to each second subpixel PXd.

由于各个子像素PXc和PXd与图3中所示的子像素基本相同,将省略对其详细的描述。Since the respective subpixels PXc and PXd are substantially the same as those shown in FIG. 3 , detailed descriptions thereof will be omitted.

下面,将参照图17和图18进一步描述LCD的结构。Next, the structure of the LCD will be further described with reference to FIGS. 17 and 18 .

图17是根据本发明的LCD的另一个示例性实施例的平面图,图18是沿图17的XVIII-XVIII’线截取的LCD示例性实施例的横截面图。17 is a plan view of another exemplary embodiment of an LCD according to the present invention, and FIG. 18 is a cross-sectional view of the exemplary embodiment of the LCD taken along line XVIII-XVIII' of FIG. 17 .

如图17和18所示,LCD包括下部面板101、面向下部面板101的上部面板201、以及位于面板101和201之间的液晶层3。下部面板101也可被称为TFT面板或第一面板,并且上部面板201也可被称为共电极面板、滤色器面板或者第二面板。As shown in FIGS. 17 and 18 , the LCD includes a lower panel 101 , an upper panel 201 facing the lower panel 101 , and a liquid crystal layer 3 between the panels 101 and 201 . The lower panel 101 may also be called a TFT panel or a first panel, and the upper panel 201 may also be called a common electrode panel, a color filter panel, or a second panel.

首先,将描述下部面板101。First, the lower panel 101 will be described.

在基于透明玻璃或塑料的绝缘基板110上形成多条栅极线121和多条存储电极线131a。A plurality of gate lines 121 and a plurality of storage electrode lines 131a are formed on a transparent glass or plastic based insulating substrate 110 .

栅极线121沿诸如横向或第一方向水平延伸,并且彼此分离,以传输栅极信号。各条栅极线121具有多个用于形成栅电极124c和124d的突起以及连接其它层或外部装置的宽区域的端部129。The gate lines 121 extend horizontally, such as in a lateral direction or a first direction, and are separated from each other to transmit gate signals. Each of the gate lines 121 has a plurality of protrusions for forming the gate electrodes 124c and 124d and wide-area end portions 129 connected to other layers or external devices.

存储电极线131a也基本平行于栅极线121水平延伸,并且具有多个突起,用于形成存储电极133a和133b。存储电极133a和133b可为矩形形状并与存储电极线131a对称。The storage electrode line 131a also extends horizontally substantially parallel to the gate line 121, and has a plurality of protrusions for forming storage electrodes 133a and 133b. The storage electrodes 133a and 133b may be rectangular in shape and symmetrical to the storage electrode line 131a.

栅极绝缘层140形成在栅极线121以及存储电极线131a上,并且可进一步形成在绝缘基板110的露出部分之上。栅极绝缘层140可由氮化硅(SiNx)或类似材料制成。The gate insulating layer 140 is formed on the gate line 121 and the storage electrode line 131 a, and may be further formed on the exposed portion of the insulating substrate 110 . The gate insulating layer 140 may be made of silicon nitride (SiNx) or the like.

多个岛状半导体154c、154d、156b和157b由氢化a-Si或多晶硅形成在栅极绝缘层140上。半导体154c和154d分别位于栅电极124c和124d上。A plurality of island-shaped semiconductors 154c, 154d, 156b, and 157b are formed of hydrogenated a-Si or polysilicon on the gate insulating layer 140 . Semiconductors 154c and 154d are located on gate electrodes 124c and 124d, respectively.

具有n+氢化a-Si的多个岛状欧姆接触件163c、163d、165c、165d、166b和167形成在半导体154c、154d、156b和157b上,在n+氢化a-Si中,掺杂诸如硅化物和磷的高浓度n型杂质。多对欧姆接触件163c和165c以及欧姆接触件163d和165d位于半导体154c和154d上,而其它欧姆接触件166b和167分别位于半导体156b和157b上。A plurality of island-shaped ohmic contacts 163c, 163d, 165c, 165d, 166b, and 167 having n+ hydrogenated a-Si in which doping such as silicide and high concentrations of n-type impurities of phosphorus. Pairs of ohmic contacts 163c and 165c and ohmic contacts 163d and 165d are located on semiconductors 154c and 154d, while other ohmic contacts 166b and 167 are located on semiconductors 156b and 157b, respectively.

多条数据线171a和171b以及与数据线171a和171b分离的漏电极175c和175d形成在栅极绝缘层140和欧姆接触件163c、163d、165c、165d、166b和167上。A plurality of data lines 171 a and 171 b and drain electrodes 175 c and 175 d separated from the data lines 171 a and 171 b are formed on the gate insulating layer 140 and the ohmic contacts 163 c , 163 d , 165 c , 165 d , 166 b and 167 .

数据线171a和171b沿诸如纵向或第二方向垂直延伸,从而与栅极线121和存储电极线131a交叉,以传输数据电压。通过设置在栅极线与数据线之间的栅极绝缘层140,将数据线171a和171b与栅极线121分离。数据线171a和171b包括多个源电极173c和173d以及具有扩大宽度的端部179a和179b,该端部用于连接其其它层或者外部装置。The data lines 171a and 171b extend vertically, such as in a longitudinal direction or a second direction, so as to cross the gate lines 121 and the storage electrode lines 131a to transmit data voltages. The data lines 171a and 171b are separated from the gate line 121 by the gate insulating layer 140 disposed between the gate line and the data line. The data lines 171a and 171b include a plurality of source electrodes 173c and 173d and end portions 179a and 179b having enlarged widths for connecting other layers thereof or external devices.

第一漏电极175c和第二漏电极175d与数据线171a和171b分离,并分别面向栅电极124c和124d周围的源电极173c和173d。第一漏电极175c和第二漏电极175d具有棒状的端部,其位于半导体154c和154d之上;以及宽区域的延伸部177c和177d,其从棒状端部伸出并与存储电极133a和133b重叠。漏电极175c和175d的棒状端部由U形弯曲的源电极173c和173d部分地包围。The first drain electrode 175c and the second drain electrode 175d are separated from the data lines 171a and 171b, and face the source electrodes 173c and 173d around the gate electrodes 124c and 124d, respectively. The first drain electrode 175c and the second drain electrode 175d have rod-shaped ends, which are located on the semiconductors 154c and 154d; overlapping. Rod-shaped ends of drain electrodes 175c and 175d are partially surrounded by U-shaped bent source electrodes 173c and 173d.

第一栅电极124c和第二栅电极124d、第一源电极173c和第二源电极173d、第一漏电极175c和第二漏电极175d连同半导体154c和154d一起形成第一TFT Qc和第二TFT Qd。TFT Qc和Qd的沟道形成在第一源电极173c和第二源电极173d与第一漏电极175c和第二漏电极175d之间以及欧姆接触件163c、163d和165c、165d之间的半导体154c和154d上。The first gate electrode 124c and the second gate electrode 124d, the first source electrode 173c and the second source electrode 173d, the first drain electrode 175c and the second drain electrode 175d form the first TFT Qc and the second TFT together with the semiconductors 154c and 154d. Qd. The channels of the TFTs Qc and Qd are formed in the semiconductor 154c between the first source electrode 173c and the second source electrode 173d and the first drain electrode 175c and the second drain electrode 175d and between the ohmic contacts 163c, 163d and 165c, 165d and 154d.

欧姆接触件163c、163d、165c、165d、166b和167仅夹置在下层半导体154c,154d、156b和157b与上覆数据线171a、171b以及漏电极175a、175b之间,以降低其间的接触电阻。岛状半导体154c和154d具有通过源电极173c和173d以及漏电极175c和175d露出的部分,并且半导体156b和157b使得栅极线121和存储电极线131a上的外形平滑,从而防止数据线171a和171b以及漏电极175c和175d相交。The ohmic contacts 163c, 163d, 165c, 165d, 166b, and 167 are interposed only between the underlying semiconductors 154c, 154d, 156b, and 157b and the overlying data lines 171a, 171b and drain electrodes 175a, 175b to reduce contact resistance therebetween. . The island-shaped semiconductors 154c and 154d have portions exposed through the source electrodes 173c and 173d and the drain electrodes 175c and 175d, and the semiconductors 156b and 157b smooth the contours on the gate line 121 and the storage electrode line 131a, thereby preventing the data lines 171a and 171b from And the drain electrodes 175c and 175d intersect.

钝化层180形成在数据线171a、171b、漏电极175c、175d以及半导体154c与154d的露出部分上。如图所示,钝化层180可进一步形成在栅极绝缘层140的露出部分上。A passivation layer 180 is formed on the data lines 171a, 171b, the drain electrodes 175c, 175d, and exposed portions of the semiconductors 154c and 154d. As shown, a passivation layer 180 may be further formed on the exposed portion of the gate insulating layer 140 .

多个接触孔185c、185d、182a、以及182b通过钝化层180形成,以分别露出漏电极175c、175d的延伸部177c、177d和数据线171a、171b的端部179a和179b。多个接触孔181通过钝化层180和栅极绝缘层140形成,以露出栅极线121的端部129。A plurality of contact holes 185c, 185d, 182a, and 182b are formed through the passivation layer 180 to expose extensions 177c, 177d of the drain electrodes 175c, 175d and end portions 179a, 179b of the data lines 171a, 171b, respectively. A plurality of contact holes 181 are formed through the passivation layer 180 and the gate insulating layer 140 to expose the end portions 129 of the gate lines 121 .

多个具有第一子像素191a和第二子像素191b的像素电极191、多个屏蔽电极88a、以及多个辅助接触件(接触辅助件)81、82a、和82b形成在钝化层180上。多个像素电极191、多个屏蔽电极88a以及多个辅助接触件81、82a、和82b可由诸如ITO或IZO的透明导电材料制成,或者由诸如铝的用于反射型LCD中的反光导电材料制成。A plurality of pixel electrodes 191 having first and second subpixels 191 a and 191 b , a plurality of shield electrodes 88 a , and a plurality of auxiliary contacts (contact assistants) 81 , 82 a , and 82 b are formed on the passivation layer 180 . The plurality of pixel electrodes 191, the plurality of shield electrodes 88a, and the plurality of auxiliary contacts 81, 82a, and 82b may be made of a transparent conductive material such as ITO or IZO, or a light-reflective conductive material such as aluminum used in reflective LCDs. production.

第一子像素电极191a和第二子像素电极191b通过接触孔185c和185d物理-电连接至第一漏电极175c和第二漏电极175d,以接收来自第一漏电极175c和第二漏电极175d的数据电压。相对于一个输入图像信号,向像素电极191a和191b施加彼此不同的预定电压,并且可根据子像素电极191a和191b的形状和大小确定电压的大小。此外,子像素电极191a和191b的区域可彼此相同。与第一子像素电极191a相比,第二子像素电极191b接收更高的电压,并且其区域小于第一子像素电极190a的区域。The first subpixel electrode 191a and the second subpixel electrode 191b are physically-electrically connected to the first drain electrode 175c and the second drain electrode 175d through the contact holes 185c and 185d, so as to receive signals from the first drain electrode 175c and the second drain electrode 175d. data voltage. Predetermined voltages different from each other are applied to the pixel electrodes 191a and 191b with respect to one input image signal, and the magnitude of the voltages may be determined according to the shape and size of the subpixel electrodes 191a and 191b. In addition, regions of the subpixel electrodes 191a and 191b may be identical to each other. Compared with the first subpixel electrode 191a, the second subpixel electrode 191b receives a higher voltage, and its area is smaller than that of the first subpixel electrode 190a.

用于接收数据电压的子像素电极191a和191b与提供有共电压的对置面板200的共电极270结合产生电场,从而确定位于两个电极191与270之间的液晶层3的液晶分子的排列。The sub-pixel electrodes 191a and 191b for receiving the data voltage are combined with the common electrode 270 of the opposite panel 200 provided with a common voltage to generate an electric field, thereby determining the arrangement of liquid crystal molecules in the liquid crystal layer 3 between the two electrodes 191 and 270 .

各个子像素电极191a和191b以及共电极270形成液晶电容器CLCc和CLCd,并且即使在TFT Qc和Qd关闭后仍保持施加的电压。通过将第一子像素电极191a、第二子像素电极191b以及连接至此的漏电极175c、175d的延伸部177c、177d与存储电极133a和133b重叠而形成存储电容器CSTc和CSTd,其并联至液晶电容器CLCc和CLCd,以增强电压存储容量。The respective subpixel electrodes 191a and 191b and the common electrode 270 form liquid crystal capacitors C LCc and C LCd , and maintain the applied voltage even after the TFTs Qc and Qd are turned off. Storage capacitors CSTc and CSTd are formed by overlapping the first subpixel electrode 191a, the second subpixel electrode 191b and the extensions 177c, 177d of the drain electrodes 175c, 175d connected thereto with the storage electrodes 133a and 133b, which are connected in parallel to Liquid crystal capacitors C LCc and C LCd to enhance voltage storage capacity.

在其间插入间隙(gap)93时,形成像素电极191的一对第一子像素电极191a和第二子像素电极191b彼此接合,并且像素电极191的外形大概呈矩形。第二子像素电极191b大概形成旋转的的等边梯形,其具有梯形的凹底面,并且第二子像素电极大部分由第一子像素电极191a包围,也就是说,第二子像素电极191b落入第一子像素电极191a中。第一子像素电极191a具有上部梯形部分、下部梯形部分、以及在其左侧彼此相连的中部梯形。第一子像素电极191a的中部梯形部分安装到第二子像素电极191b的凹底面中。位于第一子像素电极191a和第二子像素电极191b之间的间隙93大概具有两对与栅极线121成约45°角具有均匀宽度的上部倾斜部分和下部倾斜部分、以及三个具有基本均匀宽度的垂直部分。为了便于说明,间隙93也可被称为切口。A pair of first and second subpixel electrodes 191a and 191b forming the pixel electrode 191 are joined to each other with a gap 93 interposed therebetween, and the outer shape of the pixel electrode 191 is approximately rectangular. The second subpixel electrode 191b roughly forms a rotated equilateral trapezoid, which has a trapezoidal concave bottom, and most of the second subpixel electrode is surrounded by the first subpixel electrode 191a, that is, the second subpixel electrode 191b falls into the first sub-pixel electrode 191a. The first subpixel electrode 191a has an upper trapezoidal portion, a lower trapezoidal portion, and a middle trapezoidal shape connected to each other on the left side thereof. The central trapezoidal portion of the first subpixel electrode 191a fits into the concave bottom surface of the second subpixel electrode 191b. The gap 93 between the first subpixel electrode 191a and the second subpixel electrode 191b roughly has two pairs of upper and lower inclined portions with a uniform width at an angle of about 45° to the gate line 121, and three pairs with substantially Vertical sections of uniform width. For ease of description, the gap 93 may also be referred to as a cutout.

第一子像素191a具有切口96a、96b、97a和97b,该切口从上部梯形部分的顶面和下部梯形部分的底面向其右侧延伸。第一子像素电极191a具有沿存储电极线131a延伸的切口91和92a,并且切口91和92a具有从其中心水平延伸的水平部分和两个与存储电极线131a成约45°角的脚。第二子像素电极191b具有从左侧向右侧延伸的切口94a和94b。切口91、92a、94a、94b、96a、96b、97a和97b与存储电极线131a镜面对称,并且当与栅极线121成约45°角时彼此基本上垂直或者平行地延伸。也就是说,在像素电极191的上半部分上的切口彼此平行设置,在像素电极191的下半部分上的切口彼此平行设置,而且在上半部分上的切口垂直于下半部分上的切口。像素电极191的上半部分和下半部分通过切口91-97b被分成八个区域。The first sub-pixel 191a has cutouts 96a, 96b, 97a, and 97b extending from the top surface of the upper trapezoidal portion and the bottom surface of the lower trapezoidal portion to the right thereof. The first subpixel electrode 191a has cutouts 91 and 92a extending along the storage electrode line 131a, and the cutouts 91 and 92a have a horizontal portion extending horizontally from the center thereof and two legs at an angle of about 45° to the storage electrode line 131a. The second subpixel electrode 191b has cutouts 94a and 94b extending from left to right. The cutouts 91 , 92 a , 94 a , 94 b , 96 a , 96 b , 97 a , and 97 b are mirror-symmetrical to the storage electrode line 131 a and extend substantially perpendicular or parallel to each other when forming an angle of about 45° with the gate line 121 . That is to say, the cutouts on the upper half of the pixel electrode 191 are arranged parallel to each other, the cutouts on the lower half of the pixel electrode 191 are arranged parallel to each other, and the cutouts on the upper half are perpendicular to the cutouts on the lower half. . The upper and lower halves of the pixel electrode 191 are divided into eight regions by the cutouts 91-97b.

虽然已经说明和描述了特定的布置,但是分隔区域或切口的数量也可以根据设计因素而改变,例如像素尺寸、像素191的水平边到垂直边的长度比、以及液晶层3的类型或特性。Although specific arrangements have been illustrated and described, the number of separation regions or cutouts may also vary depending on design factors such as pixel size, horizontal to vertical length ratio of pixels 191 , and type or characteristics of liquid crystal layer 3 .

屏蔽电极88a具有沿数据线171a和171b延伸的垂直部分和沿栅极线121延伸的水平部分。垂直部分完全覆盖数据线171a和171b,并且水平部分完全覆盖栅极线121。The shield electrode 88 a has a vertical portion extending along the data lines 171 a and 171 b and a horizontal portion extending along the gate line 121 . The vertical portion completely covers the data lines 171 a and 171 b , and the horizontal portion completely covers the gate line 121 .

屏蔽电极88a屏蔽数据线171a和171b与像素电极191之间以及数据线171a和171b与共电极270之间的电场,以减小像素电极191的电压失真以及由数据线171a和171b传输的数据电压的信号延迟。此外,像素电极191和屏蔽电极88a应该彼此相隔足够的距离,以防止其短路电路。因此,由于像素电极191从数据线171a和171b以及栅极线121延伸足够远,所以降低了它们之间的寄生电容。The shielding electrode 88a shields the electric field between the data lines 171a and 171b and the pixel electrode 191 and between the data lines 171a and 171b and the common electrode 270, so as to reduce the voltage distortion of the pixel electrode 191 and the distortion of the data voltage transmitted by the data lines 171a and 171b. Signal delay. In addition, the pixel electrode 191 and the shield electrode 88a should be separated from each other by a sufficient distance to prevent them from short-circuiting. Therefore, since the pixel electrode 191 extends far enough from the data lines 171a and 171b and the gate line 121, the parasitic capacitance between them is reduced.

辅助接触件81、82a和82b分别连接至栅极线121的端部129以及数据线171a和171b的端部179a和179b。辅助接触件81、82a和82b起到增强栅极线121的露出端部129以及数据线171a和171b的露出端部179a和179b与外部装置之间的附着力,并保护它们。The auxiliary contacts 81, 82a and 82b are connected to the end 129 of the gate line 121 and the ends 179a and 179b of the data lines 171a and 171b, respectively. The auxiliary contacts 81, 82a, and 82b function to enhance adhesion between the exposed end portions 129 of the gate line 121 and the exposed end portions 179a and 179b of the data lines 171a and 171b and external devices, and protect them.

定向层11形成在像素电极191、辅助接触件81、82a和82b以及钝化层180上,以使液晶层3定向。The alignment layer 11 is formed on the pixel electrode 191 , the auxiliary contacts 81 , 82 a and 82 b and the passivation layer 180 to align the liquid crystal layer 3 .

接下来,将描述上部面板201。Next, the upper panel 201 will be described.

遮光件220(也称为黑色矩阵)、多个滤色器230、覆盖层250、以及共电极270顺序地形成在基于透明玻璃或塑料的绝缘基板210上。A light blocking member 220 (also referred to as a black matrix), a plurality of color filters 230, an overcoat layer 250, and a common electrode 270 are sequentially formed on the insulating substrate 210 based on transparent glass or plastic.

共电极270具有多组切口71、72、73a、74a、75c、75d、76c、76d、77a、77b、78a和78b。The common electrode 270 has a plurality of sets of cutouts 71, 72, 73a, 74a, 75c, 75d, 76c, 76d, 77a, 77b, 78a, and 78b.

每组切口71-78面向一个像素电极191并且包括中部切口71、72、73a和74a、上部切口75c、76c、77a和78a以及下部切口75d、76d、77b和78b。切口71-78b设置在共电极270上,其对应于像素电极191左侧中心,在像素电极191的相邻切口之间,并在最外侧切口97a和97b与像素电极191的角落之间的位置。此外,切口72-78b包括至少一个平行于像素电极191的切口91-97b延长的倾斜部分。Each set of cutouts 71-78 faces one pixel electrode 191 and includes middle cutouts 71, 72, 73a and 74a, upper cutouts 75c, 76c, 77a and 78a, and lower cutouts 75d, 76d, 77b and 78b. The cutouts 71-78b are provided on the common electrode 270, which correspond to the left center of the pixel electrode 191, between the adjacent cutouts of the pixel electrode 191, and between the outermost cutouts 97a and 97b and the corners of the pixel electrode 191. . In addition, the cutouts 72 - 78 b include at least one inclined portion extending parallel to the cutouts 91 - 97 b of the pixel electrode 191 .

下部切口和上部切口75c-78b包括倾斜部分以及水平部分和垂直部分,该倾斜部分从对应于像素电极191右侧的位置沿共电极270向底面或顶面延伸,并且当水平和垂直部分与像素电极的侧面重叠并相对于倾斜部分成钝角时,其从对应于倾斜部分的各个端部的位置沿像素电极191的侧面伸出。The lower and upper cutouts 75c-78b include an inclined portion, a horizontal portion and a vertical portion, the inclined portion extends from the position corresponding to the right side of the pixel electrode 191 along the common electrode 270 to the bottom surface or the top surface, and when the horizontal and vertical portions are aligned with the pixel electrode 191 The electrodes protrude along the sides of the pixel electrode 191 from positions corresponding to the respective ends of the inclined portion when the sides thereof overlap and form an obtuse angle with respect to the inclined portion.

第一中部切口71具有位于共电极270上的垂直部分,当与像素电极重叠时,沿对应于像素电极191左侧的位置延伸;以及水平部分,其从垂直部分的中心沿存储电极线131a伸出。第二和第三中部切口72和73a包括位于共电极270上的水平部分,其沿对应于存储电极线131a的位置延伸;一对倾斜部分,其从水平部分向对应于像素电极191左侧的位置伸出并倾斜于存储电极线131a;以及垂直端部,当其与像素电极的左侧重叠并与倾斜部分成钝角时,从倾斜部分端部沿对应于像素电极191左侧的位置伸出。第四中部切口74a包括位于共电极270上的垂直部分,当与像素电极重叠时,沿对应于像素电极191右侧的位置延伸;一对倾斜部分,从垂直部分的各个端部向对应于像素电极191左侧的位置延伸;以及垂直端部,当与像素电极重叠并与倾斜部分成钝角时,从倾斜部分的端部沿共电极270上对应于第二子像素电极191b左侧的位置延伸。The first middle cutout 71 has a vertical portion on the common electrode 270 extending along a position corresponding to the left side of the pixel electrode 191 when overlapping the pixel electrode; and a horizontal portion extending from the center of the vertical portion along the storage electrode line 131a. out. The second and third middle cutouts 72 and 73a include a horizontal portion on the common electrode 270 extending along a position corresponding to the storage electrode line 131a; and a vertical end, when it overlaps the left side of the pixel electrode and forms an obtuse angle with the inclined portion, protrudes from the end of the inclined portion along a position corresponding to the left side of the pixel electrode 191 . The fourth middle cutout 74a includes a vertical portion located on the common electrode 270, extending along a position corresponding to the right side of the pixel electrode 191 when overlapping with the pixel electrode; The position on the left side of the electrode 191 extends; and the vertical end, when overlapping the pixel electrode and forming an obtuse angle with the inclined portion, extends from the end of the inclined portion along the position corresponding to the left side of the second sub-pixel electrode 191b on the common electrode 270 .

三角形的凹口形成在切口72-77b的倾斜部分上。可选地,每个凹口的形状可为矩形、梯形、或者半圆形的形状,并且具有突起或者凹入的形状。Triangular notches are formed on the inclined portions of the cutouts 72-77b. Optionally, the shape of each notch may be rectangular, trapezoidal, or semicircular, and have a protruding or concave shape.

虽然已经说明和描述了特定的布置,但是共电极270上的切口的数量可以根据设计因素而改变。Although a particular arrangement has been illustrated and described, the number of cutouts on the common electrode 270 may vary depending on design factors.

定向层21形成在共电极270和覆盖层250上,以使液晶层3定向。The alignment layer 21 is formed on the common electrode 270 and the capping layer 250 to align the liquid crystal layer 3 .

偏振板12和22附着到显示面板101和201的外表面。在反射型LCD的情况下,可省略两个偏振板12和22中的一个。Polarizing plates 12 and 22 are attached to the outer surfaces of the display panels 101 and 201 . In the case of a reflective LCD, one of the two polarizing plates 12 and 22 may be omitted.

参照图4至6所描述的LCD的前实施例的许多特征可以应用于图17和18中所示的LCD。Many features of the previous embodiments of the LCD described with reference to FIGS. 4 to 6 can be applied to the LCD shown in FIGS. 17 and 18 .

将参照图19和20进一步描述根据本实施例的示例性数据短路棒。Exemplary data shorting bars according to this embodiment will be further described with reference to FIGS. 19 and 20 .

图19是图15所示的LCD示例性实施例的示例性数据短路棒的放大图,图20是沿图19的XX-XX’线截取的LCD的示例性实施例的横截面图。19 is an enlarged view of an exemplary data short bar of the exemplary embodiment of the LCD shown in FIG. 15 , and FIG. 20 is a cross-sectional view of the exemplary embodiment of the LCD taken along line XX-XX' of FIG. 19 .

数据短路棒310a和310b形成在绝缘基板110上,由与栅极线121相同的材料形成,并且栅极绝缘层140形成在其上。数据短路棒310a和310b可以在与栅极线121相同的制造工艺过程中形成。数据焊盘PD1a-PDmb形成在栅极绝缘层140上,并且数据延伸线311a、311b、312a、312b、...从数据焊盘垂直伸出,其由与数据线171a和171b相同的材料形成。数据焊盘PD1a-PDmb以及数据延伸线311a、311b、312a、312b、...可在与数据线171a和171b相同的制造工艺过程中形成。钝化层180形成在数据延伸线311a、311b、312a、312b、...上。The data short bars 310a and 310b are formed on the insulating substrate 110, are formed of the same material as the gate line 121, and the gate insulating layer 140 is formed thereon. The data short bars 310 a and 310 b may be formed during the same manufacturing process as the gate line 121 . Data pads PD1a-PDmb are formed on the gate insulating layer 140, and data extension lines 311a, 311b, 312a, 312b, . . The data pads PD1a-PDmb and the data extension lines 311a, 311b, 312a, 312b, . . . may be formed in the same manufacturing process as the data lines 171a and 171b. A passivation layer 180 is formed on the data extension lines 311a, 311b, 312a, 312b, . . . .

接触孔381a、381b、382a、382b、...通过钝化层180形成,以露出数据延伸线311a、311b、312a、312b、...。用于露出第一栅极短路棒310a的接触孔391a、392a、...和用于露出第二栅极短路棒310b的接触孔391b、392b、...通过钝化层180和栅极绝缘层140形成。Contact holes 381a, 381b, 382a, 382b, . . . are formed through the passivation layer 180 to expose the data extension lines 311a, 311b, 312a, 312b, . The contact holes 391a, 392a, . . . for exposing the first gate shorting bar 310a and the contact holes 391b, 392b, . Layer 140 is formed.

连接器371a、371b、372a、372b,...由ITO或IZO形成在钝化层180上。连接器371a、371b、372a、372b,...可以在与像素电极191相同的制造工艺过程中形成。第一连接器371a、372a、...通过第一接触孔381a、391a、382a、392a、...分别与第一数据短路棒310a和数据延伸线311a、312a、...物理-电互连,而第二连接器371b、372b、...通过第二接触孔381b、391b、382b、392b、...分别与第二数据短路棒310b和数据延伸线311b、312b、...物理-电互连。The connectors 371a, 371b, 372a, 372b, . . . are formed of ITO or IZO on the passivation layer 180 . The connectors 371a, 371b, 372a, 372b, . . . may be formed during the same manufacturing process as the pixel electrode 191 . The first connectors 371a, 372a, ... are physically-electrically interconnected with the first data short bar 310a and the data extension lines 311a, 312a, ... respectively connected, and the second connectors 371b, 372b, . - electrical interconnection.

同时,数据延伸线311a、311b、312a、312b、...可在数据短路棒310a和310b之上延伸,从而它们连接至防静电辅助线(未示出)。Meanwhile, the data extension lines 311a, 311b, 312a, 312b, . . . may extend over the data short bars 310a and 310b so that they are connected to an antistatic auxiliary line (not shown).

下面,将参照图21和22描述用于根据本发明的LCD的示例性实施例的VI测试。Next, a VI test for an exemplary embodiment of an LCD according to the present invention will be described with reference to FIGS. 21 and 22 .

图21是根据本发明的LCD的另一示例性实施例的示例性测试波形图,图22示出根据本发明LCD的另一示例性实施例的像素极性。FIG. 21 is an exemplary test waveform diagram of another exemplary embodiment of an LCD according to the present invention, and FIG. 22 shows pixel polarity of another exemplary embodiment of an LCD according to the present invention.

如图2所示,根据T6的周期,向栅极短路棒320施加栅极测试信号Vg。向第一栅极短路棒310a施加正数据电压V+,并向第二栅极短路棒310b施加负数据电压V-。正数据电压V+和负数据电压V-的大小相等,或者至少基本上相等。换句话说,正数据电压V+和负数据电压V-均具有相同或者基本相同的偏离共电压的量。由于施加栅极测试信号,开关元件Qc和Qd开启,以使第一子像素电极191a充有正像素电压,并且第二子像素电压191b充有负像素电极。在第一子像素电极191a和第二子像素电极190b持续地提供正像素电压和负像素电压。As shown in FIG. 2 , the gate test signal Vg is applied to the gate short bar 320 according to the period of T6 . A positive data voltage V+ is applied to the first gate shorting bar 310a, and a negative data voltage V− is applied to the second gate shorting bar 310b. The magnitudes of the positive data voltage V+ and the negative data voltage V- are equal, or at least substantially equal. In other words, both the positive data voltage V+ and the negative data voltage V− have the same or substantially the same amount of deviation from the common voltage. Due to the application of the gate test signal, the switching elements Qc and Qd are turned on, so that the first subpixel electrode 191a is charged with a positive pixel voltage, and the second subpixel voltage 191b is charged with a negative pixel electrode. A positive pixel voltage and a negative pixel voltage are continuously provided on the first sub-pixel electrode 191a and the second sub-pixel electrode 190b.

然而,如图22所示,在数据线D2b和D3a之间形成电桥ST4的情况下,将小于正数据电压V+和负数据电压V-的电压VPST4(例如,共电压)施加给与其相连的第一子像素电极和第二子像素电极。也就是说,连接至数据线D2b和D3a的子像素电极施加有诸如共电压的电压VPST4,其具有小于正数据电压V+和负数据电压V-的大小,这是由于它没有像正数据电压V+和负数据电压V-偏离共电压过多。因此,通过VI测试检测像素列与相邻列之间的不同亮度,可以很容易地识别第一数据线171a和第二数据线171b之间的电桥。However, as shown in FIG. 22, in the case where a bridge ST4 is formed between the data lines D2b and D3a, a voltage V PST4 (for example, a common voltage) smaller than the positive data voltage V+ and the negative data voltage V- is applied to the bridge ST4 connected thereto. The first sub-pixel electrode and the second sub-pixel electrode. That is, the sub-pixel electrodes connected to the data lines D2b and D3a are applied with a voltage V PST4 such as a common voltage, which has a magnitude smaller than the positive data voltage V+ and the negative data voltage V-, since it is not as positive data voltage V+ and the negative data voltage V- deviate too much from the common voltage. Therefore, the bridge between the first data line 171a and the second data line 171b can be easily identified by detecting the difference in brightness between the pixel column and the adjacent column through the VI test.

此外,即使当第一子像素电极191a和第二子像素电极191b之间形成电桥ST5时,在子像素电极充有小于正数据电压V+和负数据电压V-的电压VPST5。因此,通过VI测试检测像素与相邻像素之间不同的亮度,可以很容易地识别第一数据线191a和第二数据线191b之间的电桥。In addition, even when the bridge ST5 is formed between the first subpixel electrode 191a and the second subpixel electrode 191b, the subpixel electrode is charged with a voltage V PST5 smaller than the positive data voltage V+ and the negative data voltage V−. Therefore, the bridge between the first data line 191a and the second data line 191b can be easily identified by detecting the brightness difference between a pixel and adjacent pixels through the VI test.

如上所描述的,通过本发明的结构,将连接至各个子像素的栅极线与两个或者四个栅极短路棒连接,并且完成阵列测试和VI测试。由此,可以很容易地检测到各个相邻子像素电极之间的电桥。As described above, with the structure of the present invention, the gate lines connected to the respective sub-pixels are connected with two or four gate shorting bars, and the array test and the VI test are completed. Thus, the bridge between the respective adjacent sub-pixel electrodes can be easily detected.

此外,将连接至各个子像素的数据线与两个或者四个数据短路棒连接,并且完成阵列测试和VI测试。由此,可以很容易地检测到各个相邻数据线之间以及各个相邻子像素电极之间的电桥。In addition, the data lines connected to each sub-pixel are connected to two or four data shorting bars, and the array test and VI test are completed. Thus, the electric bridges between adjacent data lines and between adjacent sub-pixel electrodes can be easily detected.

虽然已经参照优选实施例对本发明进行了详细的描述,但是正如所附的权利要求所述,对于本领域的技术人员而言,在不背离本发明的精神和保护范围的前提下,可以对本发明进行各种修改和等同替换。Although the present invention has been described in detail with reference to preferred embodiments, as described in the appended claims, for those skilled in the art, the present invention can be modified without departing from the spirit and scope of the present invention. Various modifications and equivalents are made.

Claims (41)

1.一种液晶显示器,包括:1. A liquid crystal display, comprising: 多个像素电极,呈矩阵排列,每个像素电极具有彼此尺寸不同的第一子像素电极和第二子像素电极;a plurality of pixel electrodes arranged in a matrix, and each pixel electrode has a first sub-pixel electrode and a second sub-pixel electrode with different sizes from each other; 第一开关元件和第二开关元件,分别连接至所述第一子像素电极和所述第二子像素电极;a first switching element and a second switching element connected to the first sub-pixel electrode and the second sub-pixel electrode, respectively; 第一栅极线和第二栅极线,分别连接至所述第一开关元件和所述第二开关元件;a first gate line and a second gate line connected to the first switching element and the second switching element, respectively; 数据线,连接至所述第一开关元件和所述第二开关元件并传输数据电压;以及a data line connected to the first switching element and the second switching element and transmitting a data voltage; and 第一栅极短路棒和第二栅极短路棒,分别连接至所述第一栅极线和所述第二栅极线并且分别被提供有第一栅极测试信号和第二栅极测试信号,a first gate shorting bar and a second gate shorting bar connected to the first gate line and the second gate line respectively and supplied with a first gate test signal and a second gate test signal respectively , 其中,正数据电压在施加所述第一栅极测试信号的情况下被施加给所述数据线,并且负数据电压在施加所述第二栅极测试信号的情况下被施加给数据线,并且所述正数据电压和所述负数据电压具有基本相同的大小,wherein a positive data voltage is applied to the data line when the first gate test signal is applied, and a negative data voltage is applied to the data line when the second gate test signal is applied, and the positive data voltage and the negative data voltage have substantially the same magnitude, 其中,所述第一栅极测试信号和所述第二栅极测试信号具有180°的相位差。Wherein, the first gate test signal and the second gate test signal have a phase difference of 180°. 2.根据权利要求1所述的液晶显示器,进一步包括连接至所述数据线的数据短路棒。2. The liquid crystal display of claim 1, further comprising a data shorting bar connected to the data line. 3.根据权利要求2所述的液晶显示器,其中,所述数据短路棒与所述第一栅极线和所述第二栅极线形成在所述液晶显示器的同一层中。3. The liquid crystal display of claim 2, wherein the data short bar is formed in the same layer of the liquid crystal display as the first and second gate lines. 4.根据权利要求1所述的液晶显示器,进一步包括屏蔽电极,其与所述数据线重叠并设置在两个相邻的像素电极之间。4. The liquid crystal display of claim 1, further comprising a shielding electrode overlapping the data line and disposed between two adjacent pixel electrodes. 5.根据权利要求4所述的液晶显示器,其中,所述屏蔽电极与所述第一栅极线和所述第二栅极线中的至少一条重叠。5. The liquid crystal display of claim 4, wherein the shielding electrode overlaps at least one of the first gate line and the second gate line. 6.根据权利要求1所述的液晶显示器,其中,当输入一个图像信号时施加给所述第一子像素电极和所述第二子像素电极的数据电压的大小彼此不同,并且所述数据电压从一组图像信息中获取。6. The liquid crystal display according to claim 1, wherein magnitudes of data voltages applied to the first sub-pixel electrode and the second sub-pixel electrode are different from each other when an image signal is input, and the data voltages Obtained from a set of image information. 7.根据权利要求6所述的液晶显示器,其中,所述第一子像素电极在尺寸上大于所述第二子像素电极,并且当输入一个图像信号时,施加给所述第一子像素电极的数据电压的大小小于施加给所述第二子像素电极的数据电压的大小。7. The liquid crystal display according to claim 6, wherein the first sub-pixel electrode is larger in size than the second sub-pixel electrode, and when an image signal is input, the first sub-pixel electrode is applied to the first sub-pixel electrode The magnitude of the data voltage is smaller than the magnitude of the data voltage applied to the second sub-pixel electrode. 8.根据权利要求1所述的液晶显示器,其中,所述第一和第二栅极短路棒与所述数据线形成在所述液晶显示器的同一层中。8. The liquid crystal display of claim 1, wherein the first and second gate shorting bars are formed in the same layer of the liquid crystal display as the data lines. 9.根据权利要求1所述的液晶显示器,其中,所述第一栅极短路棒和所述第二栅极短路棒基本上平行于所述数据线。9. The liquid crystal display of claim 1, wherein the first gate shorting bar and the second gate shorting bar are substantially parallel to the data lines. 10.根据权利要求1所述的液晶显示器,其中,所述第一栅极短路棒与所述第二栅极短路棒处于所述液晶显示器的显示面板边缘的外部。10. The liquid crystal display according to claim 1, wherein the first gate short bar and the second gate short bar are located outside the edge of the display panel of the liquid crystal display. 11.根据权利要求1所述的液晶显示器,进一步包括分别连接至所述第一栅极线和所述第二栅极线的栅极焊盘以及分别连接至所述第一栅极短路棒和所述第二栅极短路棒的栅极延伸线。11. The liquid crystal display according to claim 1 , further comprising gate pads respectively connected to the first gate line and the second gate line and respectively connected to the first gate shorting bar and the The grid extension line of the second grid short bar. 12.一种液晶显示器,包括:12. A liquid crystal display comprising: 多个像素电极,呈矩阵排列,每个像素电极具有彼此尺寸不同的第一子像素电极和第二子像素电极。A plurality of pixel electrodes are arranged in a matrix, and each pixel electrode has a first sub-pixel electrode and a second sub-pixel electrode with different sizes from each other. 第一开关元件和第二开关元件,分别连接至所述第一子像素电极和第二子像素电极;a first switching element and a second switching element connected to the first sub-pixel electrode and the second sub-pixel electrode, respectively; 第一栅极线和第二栅极线,分别连接至所述第一开关元件和所述第二开关元件;a first gate line and a second gate line connected to the first switching element and the second switching element, respectively; 数据线,连接至所述第一开关元件和所述第二开关元件并传输数据电压;a data line connected to the first switching element and the second switching element and transmitting a data voltage; 第一栅极短路棒和第二栅极短路棒,分别连接至奇数像素行的所述第一栅极线和所述第二栅极线,并且分别被提供有第一栅极测试信号以及第二栅极测试信号;以及The first gate shorting bar and the second gate shorting bar are respectively connected to the first gate line and the second gate line of the odd pixel row, and are provided with the first gate test signal and the second gate line respectively. two gate test signals; and 第三栅极短路棒和第四栅极短路棒,分别连接至偶数像素行的所述第一栅极线和所述第二栅极线,并且分别被提供有第三栅极测试信号以及第四栅极测试信号,The third gate shorting bar and the fourth gate shorting bar are respectively connected to the first gate line and the second gate line of the even-numbered pixel row, and are provided with the third gate test signal and the second gate line respectively. Quad gate test signal, 其中,正数据电压在施加所述第一和第四栅极测试信号的情况下被施加给所述数据线,负数据电压在施加所述第二和第三栅极测试信号的情况下被施加给所述数据线,并且所述正数据电压和所述负数据电压具有基本相同的大小,Wherein, a positive data voltage is applied to the data line when the first and fourth gate test signals are applied, and a negative data voltage is applied when the second and third gate test signals are applied. to the data line, and the positive data voltage and the negative data voltage have substantially the same magnitude, 其中,所述第一栅极测试信号、所述第二栅极测试信号、所述第三栅极测试信号以及所述第四栅极测试信号具有90°的相位差。Wherein, the first gate test signal, the second gate test signal, the third gate test signal and the fourth gate test signal have a phase difference of 90°. 13.根据权利要求12所述的液晶显示器,还包括连接至所述数据线的数据短路棒。13. The liquid crystal display of claim 12, further comprising a data shorting bar connected to the data line. 14.根据权利要求13所述的液晶显示器,其中,所述数据短路棒与所述第一栅极线和所述第二栅极线形成在所述液晶显示器的同一层中。14. The liquid crystal display of claim 13, wherein the data short bar is formed in the same layer of the liquid crystal display as the first and second gate lines. 15.根据权利要求12所述的液晶显示器,其中,还包括分别连接至所述第一栅极测试信号、所述第二栅极测试信号、所述第三栅极测试信号以及所述第四栅极测试信号的栅极焊盘以及分别将所述第一栅极短路棒、所述第二栅极短路棒、所述第三栅极短路棒以及所述第四栅极短路棒连接至所述栅极焊盘的栅极延伸线。15. The liquid crystal display according to claim 12, further comprising: connected to the first gate test signal, the second gate test signal, the third gate test signal and the fourth gate test signal respectively. The gate pad of the gate test signal and respectively connect the first gate short bar, the second gate short bar, the third gate short bar and the fourth gate short bar to the The gate extension line of the gate pad. 16.一种液晶显示器的测试方法,所述液晶显示器包括多个具有第一子像素电极和第二子像素电极的像素;分别连接至所述第一子像素电极和所述第二子像素电极的第一开关元件和第二开关元件;分别连接至所述第一开关元件和所述第二开关元件的第一栅极线和第二栅极线;以及连接至所述第一开关元件和所述第二开关元件的数据线,所述测试方法包括:16. A method for testing a liquid crystal display, the liquid crystal display comprising a plurality of pixels having a first sub-pixel electrode and a second sub-pixel electrode; respectively connected to the first sub-pixel electrode and the second sub-pixel electrode a first switching element and a second switching element; a first gate line and a second gate line respectively connected to the first switching element and the second switching element; and a first gate line connected to the first switching element and the second switching element; For the data line of the second switching element, the testing method includes: 提供分别连接至所述第一栅极线和所述第二栅极线的第一栅极短路棒和第二栅极短路棒;providing a first gate shorting bar and a second gate shorting bar respectively connected to the first gate line and the second gate line; 提供连接至所述数据线的数据短路棒;providing a data shorting bar connected to said data line; 向所述数据短路棒施加正数据电压;applying a positive data voltage to the data shorting bar; 向所述第一栅极短路棒施加第一栅极测试信号,以向所述第一子像素电极施加所述正数据电压;applying a first gate test signal to the first gate short bar to apply the positive data voltage to the first sub-pixel electrode; 向所述数据短路棒施加负数据电压;以及applying a negative data voltage to the data shorting bar; and 向所述第二栅极短路棒施加第二栅极测试信号,以向所述第二子像素电极施加所述负数据电压,applying a second gate test signal to the second gate short bar to apply the negative data voltage to the second sub-pixel electrode, 其中,所述正数据电压和所述负数据电压具有基本相同的大小,wherein the positive data voltage and the negative data voltage have substantially the same magnitude, 其中,所述第一栅极测试信号以及所述第二栅极测试信号具有180°的相位差。Wherein, the first gate test signal and the second gate test signal have a phase difference of 180°. 17.根据权利要求16所述的方法,进一步包括检测所述第一子像素电极和所述第二子像素电极的极性。17. The method of claim 16, further comprising detecting polarities of the first subpixel electrode and the second subpixel electrode. 18.根据权利要求17所述的方法,其中,检测所述第一子像素电极和所述第二子像素电极的极性包括进行阵列测试。18. The method of claim 17, wherein detecting the polarity of the first subpixel electrode and the second subpixel electrode comprises performing an array test. 19.根据权利要求18所述的方法,进一步包括识别所述第一子像素电极与所述第二子像素电极之间电桥的存在。19. The method of claim 18, further comprising identifying the presence of a bridge between the first subpixel electrode and the second subpixel electrode. 20.根据权利要求19所述的方法,其中,在施加正数据电压和负数据电压的情况下不连续地提供具有电桥的所述第一子像素电极和所述第二子像素电极的正像素电压与负像素电压。20. The method according to claim 19, wherein the positive voltage of the first sub-pixel electrode and the second sub-pixel electrode having a bridge is provided discontinuously under the condition of applying a positive data voltage and a negative data voltage. Pixel voltage and negative pixel voltage. 21.根据权利要求19所述的方法,进一步包括检测所述液晶显示器的亮度均匀性。21. The method of claim 19, further comprising detecting brightness uniformity of the liquid crystal display. 22.根据权利要求21所述的方法,其中,检测亮度均匀性包括进行视觉检测测试。22. The method of claim 21, wherein inspecting brightness uniformity includes performing a visual inspection test. 23.根据权利要求21所述的方法,进一步包括当具有带有电桥的所述第一子像素和所述第二子像素的像素的亮度与不具有电桥的像素的亮度不同时,识别所述第一子像素电极和所述第二子像素电极之间电桥的存在。23. The method of claim 21 , further comprising identifying when a pixel having the first sub-pixel and the second sub-pixel with a bridge has a different brightness than a pixel without a bridge. The presence of a bridge between the first sub-pixel electrode and the second sub-pixel electrode. 24.根据权利要求16所述的方法,进一步包括将所述第一和第二栅极短路棒与所述第一和第二栅极线分离,并且将所述数据短路棒与所述数据线分离。24. The method of claim 16, further comprising separating the first and second gate shorting bars from the first and second gate lines, and separating the data shorting bars from the data lines separate. 25.一种液晶显示器的测试方法,所述液晶显示器包括多个具有第一子像素电极和第二子像素电极的像素;分别连接至所述第一子像素电极和所述第二子像素电极的第一开关元件和第二开关元件;分别连接至所述第一开关元件和所述第二开关元件的第一栅极线和第二栅极线;以及连接至所述第一开关元件和所述第二开关元件的数据线,所述测试方法包括:25. A method for testing a liquid crystal display, the liquid crystal display comprising a plurality of pixels having a first sub-pixel electrode and a second sub-pixel electrode; respectively connected to the first sub-pixel electrode and the second sub-pixel electrode a first switching element and a second switching element; a first gate line and a second gate line respectively connected to the first switching element and the second switching element; and a first gate line connected to the first switching element and the second switching element; For the data line of the second switching element, the testing method includes: 提供分别连接至奇数像素行的所述第一栅极线和所述第二栅极线的第一栅极短路棒和第二栅极短路棒;providing a first gate shorting bar and a second gate shorting bar respectively connected to the first gate line and the second gate line of odd pixel rows; 提供分别连接至偶数像素行的所述第一栅极线和所述第二栅极线的第三栅极短路棒和第四栅极短路棒;providing a third gate shorting bar and a fourth gate shorting bar respectively connected to the first gate line and the second gate line of an even pixel row; 提供连接至所述数据线的数据短路棒;providing a data shorting bar connected to said data line; 向所述数据短路棒施加正数据电压;applying a positive data voltage to the data shorting bar; 向所述第一栅极短路棒施加第一栅极测试信号,以向所述奇数像素行的所述第一子像素电极施加所述正数据电压,applying a first gate test signal to the first gate short bar to apply the positive data voltage to the first sub-pixel electrode of the odd pixel row, 向所述数据短路棒施加负数据电压;applying a negative data voltage to the data shorting bar; 向所述第二和第三栅极短路棒施加第二栅极测试信号和第三栅极测试信号,以向所述奇数像素行的所述第二子像素电极和所述偶数像素行的所述第一子像素电极施加所述负数据电压;以及Applying a second gate test signal and a third gate test signal to the second and third gate shorting bars, so as to provide the second sub-pixel electrodes of the odd pixel rows and all of the even pixel rows applying the negative data voltage to the first sub-pixel electrode; and 向所述第四栅极短路棒施加第四栅极测试信号,以向所述偶数像素行的所述第二子像素电极施加所述正数据电压,applying a fourth gate test signal to the fourth gate short bar to apply the positive data voltage to the second sub-pixel electrode of the even pixel row, 其中,所述正数据电压和所述负数据电压具有基本相同的大小,以及wherein the positive data voltage and the negative data voltage have substantially the same magnitude, and 其中,所述第一栅极测试信号、所述第二栅极测试信号、所述第三栅极测试信号以及所述第四栅极测试信号具有90°的相位差。Wherein, the first gate test signal, the second gate test signal, the third gate test signal and the fourth gate test signal have a phase difference of 90°. 26.根据权利要求25所述的方法,进一步包括检测所述第一子像素电极和所述第二子像素电极的极性。26. The method of claim 25, further comprising detecting polarities of the first subpixel electrode and the second subpixel electrode. 27.根据权利要求25所述的方法,进一步包括识别所述第一子像素电极与所述第二子像素电极之间电桥的存在。27. The method of claim 25, further comprising identifying the presence of a bridge between the first subpixel electrode and the second subpixel electrode. 28.根据权利要求25所述的方法,进一步包括识别相邻像素的第一子像素电极之间电桥的存在。28. The method of claim 25, further comprising identifying the presence of a bridge between first subpixel electrodes of adjacent pixels. 29.根据权利要求25所述的方法,进一步包括检测所述液晶显示器的亮度均匀性。29. The method of claim 25, further comprising detecting brightness uniformity of the liquid crystal display. 30.根据权利要求25所述的方法,进一步包括将所述第一栅极短路棒和所述第二栅极短路棒与所述奇数像素行的所述第一栅极线和所述第二栅极线分离;将所述第三栅极短路棒和所述第四栅极短路棒与所述偶数像素行的所述第一栅极线和所述第二栅极线分离;以及将所述数据短路棒与所述数据线分离。30. The method of claim 25, further comprising connecting the first gate shorting bar and the second gate shorting bar to the first gate line and the second gate line of the odd pixel row. gate line separation; separating the third gate short bar and the fourth gate short bar from the first gate line and the second gate line of the even pixel row; and separating the The data short bar is separated from the data line. 31.一种液晶显示器,包括:31. A liquid crystal display comprising: 多个像素电极,呈矩阵排列,每个像素电极具有彼此尺寸不同的第一子像素电极和第二子像素电极。A plurality of pixel electrodes are arranged in a matrix, and each pixel electrode has a first sub-pixel electrode and a second sub-pixel electrode with different sizes from each other. 第一开关元件和第二开关元件,分别连接至所述第一子像素电极和第二子像素电极;a first switching element and a second switching element connected to the first sub-pixel electrode and the second sub-pixel electrode, respectively; 栅极线,连接至所述第一开关元件和所述第二开关元件;a gate line connected to the first switching element and the second switching element; 栅极短路棒,连接至所述栅极线;a gate shorting bar connected to the gate line; 第一数据线和第二数据线,与所述栅极线交叉并且分别连接至所述第一开关元件和所述第二开关元件;以及a first data line and a second data line crossing the gate line and connected to the first switching element and the second switching element, respectively; and 第一数据短路棒和第二数据短路棒,分别连接至所述第一数据线和所述第二数据线,并且被提供有彼此极性不同的数据电压,a first data short bar and a second data short bar connected to the first data line and the second data line respectively and provided with data voltages having different polarities from each other, 其中,彼此极性不同的所述数据电压具有基本相同的大小,wherein the data voltages having different polarities from each other have substantially the same magnitude, 其中,向所述栅极短路棒施加栅极测试信号,以向所述第一子像素电极施加正数据电压并向所述第二子像素电极施加负数据电压。Wherein, a gate test signal is applied to the gate short bar to apply a positive data voltage to the first sub-pixel electrode and a negative data voltage to the second sub-pixel electrode. 32.根据权利要求31所述的液晶显示器,其中,当输入一个图像信号时施加给所述第一子像素电极和所述第二子像素电极的数据电压的大小彼此不同,并且所述数据电压从一个图像信息组中获取。32. The liquid crystal display according to claim 31, wherein magnitudes of data voltages applied to the first sub-pixel electrode and the second sub-pixel electrode are different from each other when an image signal is input, and the data voltage Obtained from an image infogroup. 33.根据权利要求32所述的液晶显示器,其中,所述第一子像素电极在尺寸上大于所述第二子像素电极,并且当输入一个图像信号时施加给第一子像素电极的所述数据电压的大小小于施加给第二子像素电极的所述数据电压的大小。33. The liquid crystal display according to claim 32, wherein the first subpixel electrode is larger in size than the second subpixel electrode, and the first subpixel electrode is applied to the first subpixel electrode when an image signal is input. The magnitude of the data voltage is smaller than the magnitude of the data voltage applied to the second subpixel electrode. 34.根据权利要求31所述的液晶显示器,其中,所述第一数据短路棒和所述第二数据短路棒与所述栅极线形成在所述液晶显示器的同一层中。34. The liquid crystal display of claim 31, wherein the first data short bar and the second data short bar are formed in the same layer of the liquid crystal display as the gate lines. 35.根据权利要求31所述的液晶显示器,其中,所述第一数据短路棒和所述第二数据短路棒基本上平行于所述栅极线。35. The liquid crystal display of claim 31, wherein the first data short bar and the second data short bar are substantially parallel to the gate lines. 36.根据权利要求31所述的液晶显示器,其中,所述第一数据短路棒与所述第二数据短路棒处于所述液晶显示器的显示面板边缘的外部。36. The liquid crystal display according to claim 31, wherein the first data short bar and the second data short bar are outside the edge of the display panel of the liquid crystal display. 37.一种液晶显示器的测试方法,所述液晶显示器包括多个具有第一子像素电极和第二子像素电极的像素;分别连接至所述第一子像素电极和所述第二子像素电极的第一开关元件和第二开关元件;分别连接至所述第一开关元件和所述第二开关元件的栅极线;以及分别连接至所述第一开关元件和所述第二开关元件的第一数据线和第二数据线,所述测试方法包括:37. A method for testing a liquid crystal display, the liquid crystal display comprising a plurality of pixels having a first sub-pixel electrode and a second sub-pixel electrode; respectively connected to the first sub-pixel electrode and the second sub-pixel electrode the first switching element and the second switching element; the gate lines respectively connected to the first switching element and the second switching element; and the gate lines respectively connected to the first switching element and the second switching element For the first data line and the second data line, the test method includes: 设置第一数据短路棒和第二数据短路棒分别连接至所述第一数据线和所述第二数据线;setting a first data shorting bar and a second data shorting bar connected to the first data line and the second data line respectively; 提供连接至所述栅极线的栅极短路棒;providing a gate shorting bar connected to the gate line; 向所述第一数据短路棒施加正数据电压;applying a positive data voltage to the first data short bar; 向所述第二数据短路棒施加负数据电压;以及applying a negative data voltage to the second data shorting bar; and 向所述栅极短路棒施加栅极测试信号,以向所述第一子像素电极施加所述正数据电压并向所述第二子像素电极施加所述负数据电压,applying a gate test signal to the gate short bar to apply the positive data voltage to the first sub-pixel electrode and the negative data voltage to the second sub-pixel electrode, 其中,所述正数据电压和所述负数据电压具有基本相同的大小。Wherein, the positive data voltage and the negative data voltage have substantially the same magnitude. 38.根据权利要求37所述的方法,进一步包括检测所述液晶显示器的亮度均匀性。38. The method of claim 37, further comprising detecting brightness uniformity of the liquid crystal display. 39.根据权利要求37所述的方法,进一步包括识别所述第一数据线和第二数据线之间电桥的存在。39. The method of claim 37, further comprising identifying the presence of a bridge between the first and second data lines. 40.根据权利要求37所述的方法,进一步包括识别所述第一子像素电极与所述第二子像素电极之间电桥的存在。40. The method of claim 37, further comprising identifying the presence of a bridge between the first subpixel electrode and the second subpixel electrode. 41.根据权利要求37所述的方法,进一步包括将所述第一和第二数据短路棒与所述第一和第二数据线分离,并且将所述栅极短路棒与所述栅极线分离。41. The method of claim 37, further comprising separating the first and second data shorting bars from the first and second data lines, and separating the gate shorting bars from the gate lines separate.
CNB2006100576488A 2005-02-22 2006-02-22 LCD and method of testing thereof Expired - Fee Related CN100549772C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020050014578 2005-02-22
KR1020050014578A KR101209050B1 (en) 2005-02-22 2005-02-22 Liquid crystal display and test method thereof
KR1020050047262 2005-06-02

Publications (2)

Publication Number Publication Date
CN1825176A CN1825176A (en) 2006-08-30
CN100549772C true CN100549772C (en) 2009-10-14

Family

ID=36935920

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100576488A Expired - Fee Related CN100549772C (en) 2005-02-22 2006-02-22 LCD and method of testing thereof

Country Status (2)

Country Link
KR (1) KR101209050B1 (en)
CN (1) CN100549772C (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100388108C (en) * 2006-04-14 2008-05-14 友达光电股份有限公司 Liquid crystal display assembly, thin film transistor substrate and test method
KR20080038590A (en) * 2006-10-30 2008-05-07 삼성전자주식회사 Thin film transistor substrate and its manufacturing method
KR100843148B1 (en) * 2006-12-22 2008-07-02 삼성전자주식회사 Liquid crystal display device, connector for test of liquid crystal display device and test method thereof
CN100465739C (en) * 2007-01-18 2009-03-04 友达光电股份有限公司 Liquid crystal display, driving method thereof and electrode configuration method
CN101419345B (en) * 2007-10-22 2010-09-29 奇景光电股份有限公司 Display driver and its built-in test circuit
CN101630072B (en) * 2008-07-18 2012-01-11 群康科技(深圳)有限公司 Liquid crystal display panel
US9052549B2 (en) 2008-11-27 2015-06-09 Samsung Display Co., Ltd. Liquid crystal display and manufacturing method thereof
KR101490488B1 (en) * 2008-11-27 2015-02-06 삼성디스플레이 주식회사 Liquid crystal display device and manufacturing method thereof
CN101762915B (en) * 2008-12-24 2013-04-17 北京京东方光电科技有限公司 TFT-LCD (Thin Film Transistor Liquid Crystal Display) array base plate and drive method thereof
CN102692740B (en) * 2012-06-05 2015-07-01 深圳市华星光电技术有限公司 Liquid crystal display device, array substrate thereof and manufacturing method
CN102881689B (en) * 2012-09-21 2015-01-28 京东方科技集团股份有限公司 Array substrate and manufacturing method thereof and LCD panel
TWI486928B (en) 2012-11-16 2015-06-01 Au Optronics Corp Display and detecting method thereof
KR101403127B1 (en) 2012-11-23 2014-06-03 엘지디스플레이 주식회사 Display Panel and Method for Testing Display Panel
CN103309065B (en) * 2013-06-06 2015-11-25 深圳市华星光电技术有限公司 The measurement circuit of display panel and method of testing thereof
EP2878996B1 (en) * 2013-12-02 2018-08-29 LG Display Co., Ltd. Display device and manufacturing and testing methods thereof
KR102215749B1 (en) * 2014-04-04 2021-02-17 삼성디스플레이 주식회사 Test device of gate driver and operation method for thereof
CN104111550A (en) * 2014-08-08 2014-10-22 深圳市华星光电技术有限公司 Liquid crystal panel detection circuit
KR102202870B1 (en) * 2014-08-27 2021-01-14 엘지디스플레이 주식회사 Display device using drd type
CN104793416B (en) * 2015-04-14 2018-02-16 京东方科技集团股份有限公司 A kind of array base palte and preparation method thereof and display panel
CN105093743B (en) * 2015-08-07 2018-03-13 深圳市华星光电技术有限公司 A liquid crystal panel, TFT substrate and detection method thereof
KR102421871B1 (en) * 2015-11-30 2022-07-19 엘지디스플레이 주식회사 Display device with a built-in touch screen
CN109188743A (en) 2018-11-14 2019-01-11 惠科股份有限公司 Display panel manufacturing method and display device
CN110599936B (en) * 2019-10-31 2022-11-25 厦门天马微电子有限公司 Display panel, display detection method thereof and display device
CN112068365A (en) * 2020-09-02 2020-12-11 深圳市华星光电半导体显示技术有限公司 Display panel
CN112068375B (en) * 2020-09-23 2022-10-11 北海惠科光电技术有限公司 Mother substrate and display panel

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002072985A (en) * 2000-09-01 2002-03-12 Matsushita Electric Ind Co Ltd Active matrix type liquid crystal display device, medium and information aggregate

Also Published As

Publication number Publication date
KR101209050B1 (en) 2012-12-06
CN1825176A (en) 2006-08-30
KR20060093818A (en) 2006-08-28

Similar Documents

Publication Publication Date Title
CN100549772C (en) LCD and method of testing thereof
US7705924B2 (en) Liquid crystal display and test method thereof
KR101188601B1 (en) Liquid crystal display
US7852446B2 (en) Liquid crystal display and method of driving the same
TWI272427B (en) Liquid crystal display and thin film transistor array panel therefor
TWI399598B (en) Liquid crystal display
KR101160831B1 (en) Liquid crystal display
JP5739362B2 (en) Liquid crystal display
US8279385B2 (en) Liquid crystal display
US7973864B2 (en) Liquid crystal display
US20070008263A1 (en) Liquid crystal display
CN101266375B (en) Liquid crystal display device and method of driving thereof
KR101240642B1 (en) Liquid crystal display
CN102193261A (en) Liquid crystal display
CN102621749B (en) Liquid crystal display
US20120182514A1 (en) Liquid crystal display
CN102629057A (en) Liquid crystal display
TWI414848B (en) Liquid crystal display
KR101152124B1 (en) Liquid crystal display device and inspection method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG DISPLAY CO., LTD.

Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD.

Effective date: 20121224

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20121224

Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Display Co., Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091014

Termination date: 20200222