CN100533747C - pixel structure and repairing method thereof - Google Patents

Abstract

A pixel structure and its repairing method, suitable for being disposed on a base plate, the pixel structure includes a common wiring, a reserved wiring, a dielectric layer, two repairing wirings, an active component and a pixel electrode. The reserved wiring and the common wiring are arranged on the substrate, and the dielectric layer covers the reserved wiring and the common wiring. The repairing wirings are arranged on the dielectric layer, and each repairing wiring is provided with a first repairing area overlapped with the common wiring and a second repairing area overlapped with the reserved wiring. When the common wiring is broken, the repair wirings in the first repair region and the second repair region are connected to the common wiring and the reserved wiring, respectively, so as to connect the common wiring, the reserved wiring and the repair wirings. After the connection, the pixel structure can be effectively repaired.

Description

Pixel Structure and Its Repair Method

technical field

The present invention relates to a pixel structure and its repairing method, and in particular to an easy-to-repair pixel structure and its repairing method.

Background technique

Thin Film Transistor Liquid Crystal Display (TFT-LCD), which has superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation, has gradually become the mainstream of displays. A general thin film transistor liquid crystal display is mainly composed of a thin film transistor array substrate, a counter substrate and a liquid crystal layer sandwiched between the counter substrates. Wherein, the thin film transistor array substrate mainly includes a substrate, pixel structures arranged in an array on the substrate, scan lines and data lines. The foregoing pixel structure is mainly composed of a thin film transistor, a pixel electrode (Pixel Electrode) and a storage capacitor (Cst). Generally speaking, the scanning signal transmitted by the scanning line can turn on the corresponding thin film transistor. At this time, the image signal transmitted by the data line will be transmitted to the corresponding pixel electrode through the thin film transistor, so that the pixel electrode can control The liquid crystal above it achieves the purpose of display.

FIG. 1A is a schematic diagram of a known pixel structure, and FIG. 1B and FIG. 1C are schematic cross-sectional views corresponding to the a-b section line and c-d section line in FIG. 1A respectively. Please refer to FIG. 1A and FIG. 1B at the same time. It is known that a pixel structure 101 is disposed on a substrate 100 and is electrically connected to a scan line 102 and a data line 104 . The pixel structure 101 includes a thin film transistor 106 , a common wiring 108 and a pixel electrode 110 . The thin film transistor 106 includes a gate 106a, a channel layer 106c, a source 106s and a drain 106d. 1A and 1B, the gate 106a of the thin film transistor 106 is electrically connected to the scan line 102, the source 106s is electrically connected to the data line 104, and the drain 106d is electrically connected to the pixel electrode 110 through the contact window 112. , and then receive the image signal transmitted by the data line 104 . The common wiring 108 and the pixel electrode 110 form a storage capacitor Cst. 1C is a cross-sectional view of the storage capacitor. The common wiring 108 is used as the lower electrode of the storage capacitor Cst, and the pixel electrode 110 is used as the upper electrode of the storage capacitor Cst. insulation, and the storage capacitor Cst is used to enable the pixel structure 101 to maintain good display quality.

During the manufacturing process, the common wiring 108 in the pixel structure 101 is often disconnected due to particles or other factors, which will cause abnormal display of the pixel and cause defects in the liquid crystal display. In order to improve the level of the display, it is necessary to repair the defect points, but because the known pixel structure 101 is not easy to repair, the yield rate of the display cannot be effectively improved.

Contents of the invention

The invention provides a pixel structure, which has reserved wiring and repairing wiring.

The present invention provides a method for manufacturing the aforementioned pixel structure.

The invention provides a repairing method, which quickly repairs the open circuit of the common wiring by means of connection, so that the pixel structure can be displayed normally.

The present invention also provides a repair method, which divides the pixel electrode into multiple blocks and quickly repairs the open circuit of the common wiring by means of connection, so that the pixel structure can be displayed normally.

The present invention proposes a pixel structure, which is arranged on a substrate and is electrically connected to a scanning line and a data line. The pixel structure includes a common wiring, a reserved wiring, a dielectric layer, and two repairing wiring. line, an active element and a pixel electrode. Wherein, both the reserved wiring and the common wiring are arranged on the substrate, and both are electrically insulated, and the dielectric layer covers both. The repair lines are arranged on the dielectric layer, and each repair line has a first repair area overlapping with the common line and a second repair area overlapping with the reserved line. The active device is disposed on the substrate and electrically connected to the scan line and the data line. In addition, the pixel structure is disposed above the dielectric layer and electrically connected with the active device.

The present invention proposes a repairing method, which is suitable for repairing the above-mentioned pixel structure. When the shared wiring is disconnected, the repairing method includes: in the first repairing area and the second repairing area, respectively connect the repairing wiring to the common Wiring and repair wiring and reserved wiring connections.

The present invention proposes another repairing method, which is suitable for repairing the above-mentioned pixel structure. When the shared wiring is disconnected, the repairing method includes: separating the pixel electrode into two first blocks and a second block, and The first block and the second block are electrically insulated from each other. Then, connect the first block, the repair wiring in the first repair area, and the common wiring, and connect the first block, the repair wiring in the second repair area, and the reserved wiring.

The invention provides a method for manufacturing a pixel structure. Firstly, a gate, a scan line, a common wiring and a reserved wiring are formed on a substrate, wherein the gate is electrically connected to the scan line. Next, a dielectric layer is formed on the substrate, and the dielectric layer covers the gate, the scanning line, the common wiring and the reserved wiring. Then, a channel layer is formed on the dielectric layer. Then, a source electrode, a drain electrode, a data line and two repair wirings are formed on the dielectric layer, wherein the source electrode and the drain electrode cover part of the channel layer above both sides of the gate, and the source electrode and the data line are electrically connected. connect. The gate, the channel layer, the source and the drain constitute the active element. Each repair wiring has a first repair area overlapping with the common wiring and a second repair area overlapping with the reserved wiring. Then, a pixel electrode is formed on the substrate, and the pixel electrode is electrically connected with the drain.

The present invention provides a display panel, which includes the aforementioned pixel structure.

The present invention provides an optoelectronic device, which includes the aforementioned display panel.

The present invention proposes a method for forming a display panel, including the method for forming the aforementioned pixel structure.

The present invention provides a method for forming an optoelectronic device, including the method for forming a display panel mentioned above.

The present invention provides a method for repairing a display panel, which includes the aforementioned method for repairing a pixel structure.

According to the embodiment of the present invention, the above-mentioned pixel structure has the reserved wiring and the repairing wiring. Therefore, when the common wiring is disconnected, the common wiring, the repairing wiring and the reserved wiring can be connected through connection. At this time, the pixel structure can be repaired to maintain a normal display. In this way, the yield rate of the display can be improved.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, preferred embodiments will be described in detail below together with the accompanying drawings.

Description of drawings

FIG. 1A is a schematic diagram of a known pixel structure.

FIG. 1B is a schematic cross-sectional view corresponding to the section line a-b in FIG. 1A .

FIG. 1C is a schematic cross-sectional view corresponding to the section line a-b in FIG. 1A .

2A-2F are schematic top views of the manufacturing process of the pixel structure according to the first embodiment of the present invention.

3A to 3F are schematic cross-sectional views corresponding to the section line a-b in FIGS. 2A to 2F .

4A to 4F are schematic cross-sectional views corresponding to the c-d section line in FIGS. 2A to 2F .

FIG. 5A is a schematic top view of a pixel structure according to a second embodiment of the present invention.

5B and 5C are schematic cross-sectional views corresponding to the c-d section line in FIG. 5A .

FIG. 6A is a schematic top view of a pixel structure according to a third embodiment of the present invention.

6B and 6C are schematic cross-sectional views corresponding to the c-d section line in FIG. 6A .

FIG. 7A is a schematic top view of a pixel structure according to a fourth embodiment of the present invention.

FIG. 7B is a schematic cross-sectional view corresponding to section line c-d in FIG. 7A .

FIG. 7C is a schematic top view of the repaired pixel structure in FIG. 7A .

7D and 7E are schematic cross-sectional views corresponding to the c-d section line in FIG. 7C .

FIG. 8 is a schematic diagram of a display panel.

9 is a schematic diagram of an optoelectronic device.

Reference number

100: Substrate 101: Pixel structure

102: Scanning line 104: Data line

106: thin film transistor 106a: gate

106c: channel layer 106d: drain

106s: Source 108: Shared wiring

110: Pixel electrode 112: Contact window

114: Dielectric layer 116: Protective layer

200: Substrate

201, 201a, 201b, 201c, 201c': pixel structure

202: Grid 204, 304: Scanning line

206, 206’: shared wiring 208, 208’: reserved wiring

210: Dielectric layer 212: Channel layer

214: Data line 216: Source

218: Drain 220: Repair wiring

220a, 220a': the first repair area 220b, 220b': the second repair area

222: Protective layer 224: Contact window

228, 228': pixel electrode 228a': the first block

228b': The second block 230: Active components

800: Display Panel 810: Electronic Components

900: Photoelectric device

A: open circuit

B1, B1’, B2, B2’: Connections

P: Particles

Detailed ways

First embodiment:

2A to 2F are schematic top views of the manufacturing process of the pixel structure according to the first embodiment of the present invention, and FIGS. 3A to 3F and FIGS. 4A to 4F are respectively corresponding to a-b section lines and c-d in FIGS. 2A to 2F Schematic diagram of a section line.

Please refer to FIG. 2A, FIG. 3A and FIG. 4A at the same time. First, a first patterned conductive layer (not labeled) is formed on the substrate 200, which includes the gate 202, the scanning line 204, the common wiring 206 and the reserved wiring. line 208. This embodiment takes forming the above-mentioned line segments at the same time as an example, but it is not limited thereto. The material of the substrate 200 is, for example, an inorganic transparent material, an organic transparent material, an inorganic opaque material, or a combination thereof. Inorganic transparent materials such as glass, quartz or other suitable materials, organic transparent materials such as polyolefins, polyols, polyalcohols, polyesters, rubber, thermoplastic polymers, thermosetting polymers, polyaromatic hydrocarbons, Polymethylpropionate, polycarbonate, other suitable materials, the above derivatives or the above combinations, and the inorganic opaque material is silicon wafer, ceramics, other suitable materials or the above combinations. In this embodiment, the material of the substrate 200 is glass as an example, but it is not limited thereto. The gate 202, the scanning line 204, the common wiring 206 and the reserved wiring 208 can be a single-layer structure or a multi-layer structure, and at least one of the gate 202, the scanning line 204, the common wiring 206 and the reserved wiring 208 materials, such as gold, silver, copper, tin, aluminum, lead, titanium, molybdenum, neodymium, tungsten, niobium, hafnium, chromium, tantalum, other metal materials, nitrides of the above metals, oxides of the above metals, including An alloy of the above metals and/or a combination of the above. Furthermore, the common wiring 206 and the reserved wiring 208 are electrically insulated from each other. In this embodiment, the top view shape of the common wiring 206 is, for example, π-shaped. In addition, in this embodiment, the reserved wiring 208 is, for example, disposed between the common wiring 206 and the scanning line 204 , but the invention is not limited thereto. It is worth mentioning that, in other embodiments, the top view shape of the common wiring 206 can be a strip shape, L shape, H shape, C shape, E shape, F shape, T shape or O shape, or other shapes, or combination of the above.

Next, referring to FIG. 2B , FIG. 3B and FIG. 4B , a dielectric layer 210 is formed on the substrate 200 . The dielectric layer 210 covers the gate 202 , the scan line 204 , the common wiring 206 and the reserved wiring 208 . The dielectric layer 210 can be a single-layer structure or a multi-layer structure, and its material is, for example, an inorganic material, an organic material, or a combination thereof. Inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, other suitable materials or combinations thereof, organic materials such as photoresist, polyarylene ether (PAE), polyamide, polyester, polyamide, etc. Alcohols, polyolefins, benzocyclobutene (BCB), HSQ (hydrogen silsesquioxane), MSQ (methyl silesquioxane), silicon oxygen hydrocarbon (SiOC-H), polyether, polyketone, poly Aldehydes, polyphenols, polycycloalkanes, polyalkylene oxides, polyacetylenes, polyphenolic, other suitable materials or combinations thereof. In this embodiment, the dielectric layer 210 is a single-layer structure, and its material is silicon nitride as an example, but not limited thereto.

Then, referring to FIG. 2C , FIG. 3C and FIG. 4C , a channel layer 212 is formed on the dielectric layer 210 on both sides of the gate 202 . The channel layer 212 can be a single-layer structure or a multi-layer structure, and its material is, for example, amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, the above-mentioned crystalline silicon containing germanium, other suitable materials, or combinations thereof. In addition, the single-layer structure or multi-layer structure of the channel layer 212 may include at least one of a heavily doped region, a lightly doped region and an undoped region. In this embodiment, the material of the channel layer 212 is amorphous silicon as an example, but it is not limited thereto.

Then, please refer to FIG. 2D, FIG. 3D and FIG. 4D at the same time, a layer of second patterned conductive layer (not shown) is formed on the dielectric layer 210, which includes the source electrode 216, the drain electrode 218, the data line 214 and the repair. Wiring 220. This embodiment takes forming the above-mentioned line segments at the same time as an example, but it is not limited thereto. Wherein, the repair wiring 220 has a first repair area 220a overlapping with the common wiring 206 and a second repair area 220b overlapping with the reserved wiring 208, and the first repair area 220a and the second repair area 220b respectively There is at least one connection point (not shown) that can be used to connect to the common wiring 206 and the repair wiring 208 . The source electrode 216 , the drain electrode 218 , the data line 214 and the repair wire 220 can be a single-layer structure or a multi-layer structure. The material of at least one of the source electrode 216, the drain electrode 218, the data line 214 and the repair wiring 220 is, for example, gold, silver, copper, tin, aluminum, lead, titanium, molybdenum, neodymium, tungsten, niobium, hafnium, chromium , tantalum, other metal materials, nitrides of the above metals, oxides of the above metals, alloys of the above metals, or combinations thereof. It is worth mentioning that any two of the source electrode 216 , the drain electrode 218 , the data line 214 and the repair wiring 220 may have the same structure or different materials. Furthermore, the gate 202, the channel layer 212, the source 216 and the drain 218 constitute the active device 230, the gate 202 of the active device 230 is electrically connected to the scan line 204, and the source 216 is electrically connected to the data line 214 .

Next, referring to FIG. 2E , FIG. 3E and FIG. 4E , a protection layer 222 is formed on the substrate 200 . The protection layer 222 covers the scan lines 204 , the data lines 214 , the active device 230 , the common wiring 206 , the reserved wiring 208 , the dielectric layer 210 and the repair wiring 220 . Afterwards, for example, a contact window 224 is formed in the passivation layer 222 .

Then, referring to FIG. 2F , FIG. 3F and FIG. 4F , the pixel electrode 228 is formed on the protective layer 222 , that is, the fabrication of the pixel structure 201 is completed. The pixel electrode 228 is electrically connected to the active device 230 through the contact window 224 , for example, is electrically connected to the drain 218 of the active device 230 . Wherein, the pixel electrode 228 can be a single-layer structure or a multi-layer structure, and its material is, for example, a non-transparent material, a transparent material or a combination thereof. Non-transparent materials such as gold, silver, copper, tin, aluminum, lead, titanium, molybdenum, neodymium, tungsten, niobium, hafnium, chromium, tantalum, other metal materials, nitrides of the above metals, oxides of the above metals, Metal alloys or combinations of the above, transparent materials such as indium tin oxide, indium zinc oxide, indium tin zinc oxide, hafnium oxide, zinc oxide, aluminum oxide, aluminum tin oxide, aluminum zinc oxide, cadmium tin oxide substances, cadmium zinc oxide, or a combination of the above. In this embodiment, the material of the pixel electrode 228 is indium tin oxide as an example, but it is not limited thereto. It should be noted that in this embodiment, the pixel electrode 228 does not cover the first repairing area 220a and the second repairing area 220b, so as to facilitate subsequent repairing. In addition, the pixel electrode 228 in this embodiment is formed on the protection layer 222 as an example, but it is not limited thereto. The pixel electrode 228 may also be formed on the dielectric layer 210 to electrically connect the active element 230, for example, with The drain 218 of the active device 230 is connected. In other words, the protective layer 222 does not exist in the current structure.

In addition, in this embodiment, the active device 230 is a bottom-gated back channel etched thin film transistor. In other embodiments, the active device 230 may be a bottom gate type TFT, a top gate TFT or other types of transistors. Furthermore, the top view shapes of the source electrode 216 and the drain electrode 218 in the active device 230 are asymmetric or symmetrical. In addition, the gate 202 can be located in the scan line 204 , that is, a part of the scan line 204 is used as the gate 202 .

Moreover, in the manufacturing process of the pixel structure 201, multiple patterning processes must be performed to form, for example, a first patterned conductive layer (not shown), a second patterned conductive layer (not shown), channels Layer 212, protective layer 222, pixel electrode 228 and other elements. In this embodiment, the patterning process includes steps such as deposition, exposure, development and etching. However, in other embodiments, the patterning process includes screen printing, inkjet, deposition, exposure, development, and laser stripping, other suitable methods, or combinations thereof. Furthermore, in this embodiment, a general photomask with a light-transmitting area and a light-shielding area is used for patterning, but in other embodiments, a photomask with multi-level transmittance can be used for patterning For example, a semi-transmissive mask, a slit pattern mask, a gray scale mask, a diffraction mask, other similar masks or a combination of the above, using this mask, it is possible to simultaneously pattern At least one material layer, in other words, it can also pattern multiple material layers at the same time, for example, simultaneously pattern the combination of the second patterned conductive layer and the active layer or other material layers.

In this embodiment, the reserved wiring 208 and the repairing wiring 220 are respectively formed by the first patterned conductive layer and the second patterned conductive layer as an example, but the present invention is not limited thereto. In another embodiment, The reserved wiring 208 can be formed by the second patterned conductive layer, and the repaired wiring 220 can be formed by the first patterned conductive layer. In other words, the reserved wiring 208 can be formed by the first patterned conductive layer and the second pattern One of the patterned conductive layers is formed, and the repair wiring 220 is formed by another patterned conductive layer. It must be noted that the reserved wiring 208 and the repairing wiring 220 in this embodiment are located in the same pixel structure.

Second embodiment:

FIG. 5A is a schematic top view of a pixel structure according to a second embodiment of the present invention, and FIGS. 5B and 5C are schematic cross-sectional views corresponding to section line c-d in FIG. 5A .

Please refer to FIG. 5A and FIG. 5B at the same time. The pixel structure 201a is manufactured according to the above process, so its structure is similar to the pixel structure 201 in FIG. 2F of the first embodiment and is used as an example, but not limited thereto. However, the common wiring 206' in the pixel structure 201a has an open circuit A, which needs to be repaired to maintain normal display. In other words, the pixel structure 201a is a repaired pixel structure, and the repair method will be described next. When the common wiring 206' is disconnected due to the existence of particles or other factors in the process, the method for repairing the pixel structure 201a includes placing the wires located in the first repair area 220a and the second repair area 220b The repair wiring 220 is respectively connected to the common wiring 206 ′ and the reserved wiring 208 to form connection points B1 and B2 , so as to connect the common wiring 206 ′, the repair wiring 220 and the reserved wiring 208 . Wherein, the connection points B1 and B2 include at least one connection point. In this embodiment, the connection method is, for example, laser welding, that is, the laser is irradiated on the first repaired area 220a and the second repaired area 220b from the back side of the substrate 200 and/or the front side of the pixel electrode 228, etc., and The junctions B1, B2 are formed.

Please refer to FIG. 5C. In another embodiment, the formation of the joints B1 and B2 can be done by first using a laser to penetrate through the film layers on the same vertical line, such as through the protective layer 222, the repair wiring 220, and the dielectric layer 210. and the common wiring 206' and the protective layer 222, the repair wiring 220, the dielectric layer 210 and the reserved wiring 208 to form through holes respectively, and then fill the conductive material into the through holes to form the connection B1, B2, the repair wiring 220, the common wiring 206' and the reserved wiring 208 are connected to each other. A method of forming the conductive material is, for example, using laser chemical vapor deposition. It is worth mentioning that the two ends e and f of B1 and B2 can be separated or connected, but the connecting points B1 and B2 will not be connected with the pixel electrode 228 . Furthermore, since the energy of the laser can be selected in a relatively large range when performing laser penetration, the time required for fine-tuning is saved, so the repairing efficiency can be improved.

In this way, although the common wiring 206' in the pixel structure 201a has a disconnection A, since the connection connects the common wiring 206', the repairing wiring 220 and the reserved wiring 208, the pixel structure 201a can maintain normal display. In other words, the signal originally transmitted only through the common wiring 206 ′ can be transmitted through the common wiring 206 ′, the repair wiring 220 and the reserved wiring 208 through the connection points B1 and B2 across the disconnection A. .

Third embodiment:

FIG. 6A is a schematic top view of a pixel structure according to a third embodiment of the present invention, and FIGS. 6B and 6C are schematic cross-sectional views corresponding to section line c-d in FIG. 6A .

Please refer to FIG. 6A and FIG. 6B at the same time. The pixel structure 201b is similar to the pixel structure 201a in FIG. 5A. However, in this embodiment, the common wiring 206' is arranged between the scanning line 204 and the reserved wiring 208' as an example, in other words, the reserved wiring 208' is arranged closer to the next A scan line 304 of a pixel structure (not shown). Therefore, for example, when a larger particle P is located near the common wiring 206' and causes the common wiring 206' to break A, the reserved wiring 208' not adjacent to the common wiring 206' will not be affected. Therefore, the repair method described in the second embodiment can be used to repair the pixel structure 201b, that is, the repair wiring 220 located in the first repair area 220a and the second repair area 220b are respectively connected with the common wiring 206' and the reserved The wires 208' are connected to form connection points B1 and B2, and connect the common wire 206', the repair wire 220 and the reserved wire 208'. In this embodiment, the connection method is, for example, laser welding, that is, the laser is irradiated on the first repaired area 220a and the second repaired area 220b from the back side of the substrate 200 and/or the front side of the pixel electrode 228, etc., and The junctions B1, B2 are formed.

Please refer to FIG. 6C , in another embodiment, the formation of the joints B1 and B2 can be done by first using a laser to penetrate the film layers on the same vertical line, for example, to simultaneously penetrate the protective layer 222, the repair wiring 220, and the dielectric layer. 210, common wiring 206', protective layer 222, repair wiring 220, dielectric layer 210 and reserved wiring 208' to form through holes respectively, and then fill conductive materials into the through holes to form connections B1, B2, so that the repair wiring 220, the common wiring 206' and the reserved wiring 208' are connected to each other. A method of forming the conductive material is, for example, using laser chemical vapor deposition. It is worth mentioning that the two ends e and f of B1 and B2 can be separated or connected, but the connecting points B1 and B2 will not be connected with the pixel electrode 228 . Furthermore, since the energy of the laser can be selected in a relatively large range when performing laser penetration, the time required for fine-tuning is saved, so the repairing efficiency can be improved.

In this way, although the common wiring 206' in the pixel structure 201b is disconnected A, the connection makes the common wiring 206', the repairing wiring 220 and the reserved wiring 208' connected, so the pixel structure 201b can Maintain normal display. In other words, the signal originally transmitted only through the common wiring 206' can be transmitted through the common wiring 206', the repair wiring 220 and the reserved wiring 208' through the connection points B1 and B2, across the disconnection A. transmission.

Fourth embodiment:

7A is a schematic top view of a pixel structure according to a fourth embodiment of the present invention, and FIG. 7B is a schematic cross-sectional view corresponding to section line c-d in FIG. 7A . FIG. 7C is a schematic top view of the repaired pixel structure in FIG. 7A , and FIGS. 7D and 7E are schematic cross-sectional views corresponding to section line c-d in FIG. 7C .

Please refer to FIG. 7A and FIG. 7B at the same time. The pixel structure 201c is manufactured according to the process described in the first embodiment, so its structure is similar to the pixel structure 201 in FIG. 2F. However, in this embodiment, the first repairing area 220a' and the second repairing area 220b' are covered by the pixel electrode 228'. Therefore, when the common wiring 206 is disconnected, its repair method is different from the above-mentioned repair method.

Please refer to FIG. 7C and FIG. 7D at the same time. When the common wiring 206' is disconnected due to particles or other factors in the process, the method for repairing the pixel structure 201c' is as follows. First, the pixel electrode 228' is separated into a first block 228'a and a second block 228'b, so that the first block 228'a and the second block 228'b are insulated from each other. A method for separating the pixel electrode 228' is, for example, cutting by applying a laser. Then, connect the first block 228'a, the repair wiring 220 located in the first repair area 220'a, and the common wiring 206' to form a connection B1'. Next, connect the first block 228'a, the repair wiring 220 located in the second repair area 220'b, and the reserved wiring 208 to form a connection B2'. In this embodiment, the connection method is, for example, laser welding, that is, the laser is irradiated on the first repaired area 220a' and the second repaired area 220b from the back side of the substrate 200 and/or the front side of the pixel electrode 228', etc. ', and form the junction B1', B2'.

Please refer to FIG. 7E , in another embodiment, the connection can be formed by first using a laser to penetrate the film layers on the same vertical line, for example, to simultaneously penetrate the first block 228'a, the protective layer 222, and the repair wiring. 220, the dielectric layer 210, the common wiring 206', the first block 228'a, the protective layer 222, the repair wiring 220, the dielectric layer 210 and the reserved wiring 208, to respectively form through holes, and then conduct The material is filled into the through holes to form the connection points B1 ′, B2 ′, so as to connect the repair wiring 220 , the common wiring 206 ′ and the reserved wiring 208 to each other. A method of forming the conductive material is, for example, using laser chemical vapor deposition. It is worth mentioning that the two ends e', f' of B1', B2' can be separated or connected, but the connecting points B1', B2' will not be connected with the second block 228'b. Furthermore, since the energy of the laser can be selected in a relatively large range when performing laser penetration, the time required for fine-tuning is saved, so the repairing efficiency can be improved.

At this time, since the common wiring 206', the repairing wiring 220 and the reserved wiring 208 are connected, the repairing of the pixel structure 201c' is completed. On the other hand, since the separation of the first block 228'a has little influence on the overall pixel electrode 228', the pixel structure 201c' can still maintain a normal display. In other words, the signal originally transmitted only through the common wiring 206 ′ can pass through the connection points B1 ′, B2 ′, cross the disconnection A, and pass through the common wiring 206 ′, the repair wiring 220 and the reserved wiring 208 to transmit.

In addition, the pixel structure 201 of the above-mentioned embodiment can be applied to the manufacture of a display panel, and FIG. 8 is a schematic diagram of a display panel. The display panel 800 includes a first transparent substrate (not shown) having pixel structures 201 arranged in an array, a second transparent substrate (not shown) opposite to the first transparent substrate, and a display medium (display media) material (not shown). (shown) is located between the first transparent substrate and the second transparent substrate as an example, but not limited thereto. Wherein, the second transparent substrate has a transparent conductive layer. The type of material of the display medium will affect the type of the display panel. For example, when the material of the display medium is a liquid crystal material, the display panel 800 is called a liquid crystal display panel, such as a transmissive display panel, a semi-transmissive display panel , reflective display panel, display panel with color filter on the active layer (color filter on array), display panel with active layer on the color filter (array on color filter), vertical alignment (VA) display panel , Horizontal Switching (IPS) Display Panel, Multi-Domain Vertical Alignment (MVA) Display Panel, Twisted Nematic (TN) Display Panel, Super Twisted Nematic (STN) Display Panel, Patterned Vertical Alignment (PVA) Display panel, Super Pattern Vertical Alignment (S-PVA) display panel, Advanced Large Viewing Angle (ASV) display panel, Fringe Field Switching (FFS) display panel, Continuous Fireworks Arrangement (CPA) display panel, Axisymmetric array micro Cell type (ASM) display panel, optically compensated bend alignment (OCB) display panel, super horizontal switching (S-IPS) display panel, advanced super horizontal switching (AS-IPS) display panel, extreme edge electric field switching ( UFFS) display panel, polymer stabilized alignment display panel, dual-view display panel, triple-view display panel, three-dimensional display panel, dual-sided display panel (dual display panel), other types of panels, or a combination of the above. When the material of the display medium is an organic electroluminescent material, such as a small molecule luminescent material, a polymer luminescent material, or a combination of the above, the display panel 800 is called an organic electroluminescent display panel, and the type of the panel is, for example, a fluorescent An electromechanical luminescent display panel, a phosphorescent organic electroluminescent display panel, or a combination of the above. When the material of the display medium is an organic electroluminescent material and a liquid crystal material, the display panel 800 is called a hybrid panel.

Furthermore, FIG. 9 is a schematic diagram of an optoelectronic device. The display panel 800 formed by the above-mentioned pixel structures 201 arranged in an array can be combined with the electronic components 810 to form an optoelectronic device 900 . The electronic element 810 is, for example, a control element, an operating element, a processing element, an input element, a memory element, a driving element, a light emitting element, a protection element, a sensing element, a detection element, other functional elements or a combination thereof. Therefore, the type of optoelectronic device 900 includes portable products (such as mobile phones, video cameras, cameras, notebook computers, game consoles, watches, music players, electronic mail transceivers, map navigators, digital photos, or similar products) , audio-visual products (such as audio-visual projectors or similar products), screens, televisions, billboards or panels inside projectors, etc.

To sum up, the pixel structure of the present invention has the reserved wiring and the repairing wiring. Therefore, when the shared wiring is disconnected, it is only necessary to connect the shared wiring, the repairing wiring and the reserved wiring. The defect of open circuit can be repaired quickly, so that the pixel structure can still be displayed normally, thereby improving the yield rate of the display.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any relevant person in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be defined by the appended claims.

Claims (21)

1. A pixel structure configured on a substrate and electrically connected to a scan line and a data line, characterized in that the pixel structure comprises: a common wiring arranged on the substrate; A reserved wiring, arranged on the substrate and electrically insulated from the common wiring; a dielectric layer disposed on the substrate and covering the common wiring and the reserved wiring; two repair lines, arranged on the dielectric layer, and each of the repair lines has a first repair area overlapping with the common line and a second repair area overlapping with the reserved line; an active device configured on the substrate, the active device is electrically connected to the scan line and the data line; and A pixel electrode is arranged on the dielectric layer, and the pixel electrode is electrically connected with the active element. 2. The pixel structure according to claim 1, further comprising a protective layer, wherein the protective layer is disposed on the substrate to cover the scanning line, the data line, the active device, The common line, the reserved line, the dielectric layer, the repair line, and the pixel electrode are arranged on the protection layer. 3. The pixel structure according to claim 1, wherein the pixel electrode does not cover above the first repaired regions and the second repaired regions. 4. The pixel structure according to claim 1, wherein the material of the shared wiring is the same as that of the reserved wiring. 5. The pixel structure according to claim 1, wherein the reserved wiring is disposed between the scanning line and the common wiring. 6. The pixel structure according to claim 1, wherein the common wiring is disposed between the scanning line and the reserved wiring. 7. The pixel structure according to claim 1, wherein the common wiring has a shape of π. 8. The pixel structure as claimed in claim 1, wherein the common wiring has a disconnected area. 9. The pixel structure according to claim 1, wherein the first repaired areas and the second repaired areas have at least one connection point, so that the first repaired areas and the second repaired areas The zones are connected to the common wiring and the reserved wiring respectively. 10. A repairing method, suitable for repairing the pixel structure according to claim 3, when the shared wiring is disconnected, the repairing method comprises: In the first repair areas and the second repair areas, respectively connect the repair lines to the shared lines and the repair lines to the reserved lines. 11. A repairing method, suitable for repairing the pixel structure according to claim 1, when the shared wiring is disconnected, the repairing method comprises: separating the pixel electrode into two first blocks and a second block, the first blocks and the second block are electrically insulated from each other; connecting the first blocks, the repair wiring in the first repair areas, and the common wiring; and Connect the first blocks, the repair lines in the second repair areas and the reserved lines. 12. A method for manufacturing a pixel structure, the method comprising: Forming a grid, a scanning line, a shared wiring and a reserved wiring on a substrate, wherein the grid is electrically connected to the scanning line; forming a dielectric layer on the substrate, the dielectric layer covering the gate, the scanning line, the common wiring and the reserved wiring; forming a channel layer on the dielectric layer; A source, a drain and a data line are formed on the dielectric layer, wherein the source and the drain cover part of the channel layer above both sides of the gate, and the source and the data line are electrically connected connected, the gate, the channel layer, the source and the drain constitute an active device; forming two repair lines on the dielectric layer, each of which has a first repair area overlapping with the common line and a second repair area overlapping with the reserved line; and A pixel electrode is formed on the substrate, and the pixel electrode is electrically connected with the drain. 13. The manufacturing method of the pixel structure as claimed in claim 12, further comprising forming a protective layer on the substrate to cover the scanning line, the data line, the active device, the common configuration lines, the reserved wiring, the dielectric layer and the repairing wirings, so that the pixel electrode is formed on the protection layer. 14. The manufacturing method of the pixel structure as claimed in claim 13, further comprising forming a contact window in the protection layer to expose the drain electrode, and the pixel electrode is connected to the pixel electrode through the contact window The drain is electrically connected. 15. The manufacturing method of the pixel structure according to claim 12, further comprising forming at least one connection point on the first repaired areas and the second repaired areas, so that the first repaired areas A repairing area and the second repairing areas are respectively connected with the common wiring and the reserved wiring. 16. A display panel, characterized in that the display panel comprises the pixel structure according to claim 1. 17. An optoelectronic device, characterized in that the optoelectronic device comprises the display panel as claimed in claim 16. 18. A method for forming a display panel, the method for forming a display panel comprising the method for forming a pixel structure according to claim 12. 19. A method for forming an optoelectronic device, the method for forming an optoelectronic device comprising the method for forming a display panel as claimed in claim 18. 20. A method for repairing a display panel, the method for repairing a display panel comprising the method for repairing a pixel structure according to claim 10 or 11. 21. A method for forming an optoelectronic device, the method for forming an optoelectronic device comprises the method for repairing a display panel as claimed in claim 20.

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