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CN100514185C - Method for making polymer self-supporting nano-micron-line - Google Patents

Method for making polymer self-supporting nano-micron-line Download PDF

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CN100514185C
CN100514185C CNB2006100756635A CN200610075663A CN100514185C CN 100514185 C CN100514185 C CN 100514185C CN B2006100756635 A CNB2006100756635 A CN B2006100756635A CN 200610075663 A CN200610075663 A CN 200610075663A CN 100514185 C CN100514185 C CN 100514185C
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CN1862379A (en
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刘斌
和亚宁
王晓工
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Tsinghua University
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Abstract

本发明涉及一种制作聚合物自支撑纳微米线的方法,属于聚合物微结构材料技术领域。首先制作具有起伏条纹微图案表面的母板;将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂混合均匀,浇注到上述母板表面上,固化后揭去母板,得到聚合物软印章;聚合物溶解在溶剂中作为墨水溶液,将软印章浸入墨水溶液中,然后将该软印章压印在基板上,揭起软印章,在基板上得到由墨水溶液固化后的聚合物的起伏条纹微图案;用氢氟酸水溶液刻蚀基板,得到聚合物自支撑纳微米线。用本发明的方法取代常规工艺制作聚合物自支撑纳微米线(包括聚合物微导线),具有工艺简单、成本低、高效可控和适用广泛等优点。

The invention relates to a method for making polymer self-supporting nanometer wires, belonging to the technical field of polymer microstructure materials. First, make a master plate with a micro-patterned surface of undulating stripes; mix the silicone prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly, pour it on the surface of the above master plate, remove the master plate after curing, and obtain a polymer Soft stamp; the polymer is dissolved in a solvent as an ink solution, the soft stamp is immersed in the ink solution, and then the soft stamp is imprinted on the substrate, the soft stamp is lifted, and the polymer cured by the ink solution is obtained on the substrate The micropattern of undulating stripes; the substrate was etched with hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires. Using the method of the invention to replace the conventional process to produce polymer self-supporting nano-micro wires (including polymer micro wires) has the advantages of simple process, low cost, high efficiency and controllability, and wide application.

Description

一种制作聚合物自支撑纳微米线的方法 A method of making polymer self-supporting nanometer wires

技术领域 technical field

本发明涉及一种制作聚合物自支撑纳微米线的方法,属于聚合物微结构材料技术领域。The invention relates to a method for making polymer self-supporting nanometer wires, belonging to the technical field of polymer microstructure materials.

背景技术 Background technique

一维纳微米结构材料,包括纳微米尺度的线、管、棒、带等结构,由于具有特殊的光、电、热和机械性能而引起了人们的高度关注。纳微米线是一维纳微米材料中最典型的结构,在科学研究和生产、生活等诸多领域具有广泛的应用前景,例如可应用于感应器、微机械、微导线和微电子器件等。One-dimensional nano-microstructured materials, including nano-microscale wires, tubes, rods, ribbons, etc., have attracted great attention due to their special optical, electrical, thermal and mechanical properties. Nano-micro-wire is the most typical structure among one-dimensional nano-micro materials, and has broad application prospects in many fields such as scientific research, production, and life, such as sensors, micromachines, microwires, and microelectronic devices.

已有的纳微米线制作方法一般只能针对特定的一种或几种材料,普适性较差。而且已报道的纳微米线主要局限于金属、金属氧化物、半导体材料和无机材料等材料,涉及的聚合物材料只有少数几种导电聚合物。通用的聚合物(包括导电聚合物,偶氮聚合物材料,以及其他商业化聚合物等)自支撑纳微米线制作方法尚未见有报道。Existing methods for making nano-micro wires generally only target one or several specific materials, and are not universally applicable. Moreover, the reported nano-micro wires are mainly limited to materials such as metals, metal oxides, semiconductor materials, and inorganic materials, and only a few conductive polymers are involved in the polymer materials. The general-purpose polymer (including conductive polymer, azo polymer material, and other commercial polymers, etc.) self-supporting nano-micro wire fabrication method has not been reported yet.

目前,已研究的一类纳微米线制作方法有微接触印刷方法(中国专利,公开号CN1672100):通过将一种含有可吸附官能团小分子的通过冲压模板转印到目标表面,形成吸附的自组装单分子层条纹图案,可以制作具有在1~100纳米范围内的横向尺寸的单分子层纳米线。该方法缺点是只能使用特定的可吸附的小分子,并且不能得到立体的纳微米线,而且该方法不能获得自支撑的纳微米结构,只能得到固定于基板上的纳微米线。At present, a kind of nano-micro wire production method that has been studied is the micro-contact printing method (Chinese patent, publication number CN1672100): by transferring a small molecule containing an adsorbable functional group to the target surface through a stamping template, an adsorbed self-printing method is formed. Assembling monolayer stripe patterns, monolayer nanowires with lateral dimensions in the range of 1-100 nanometers can be fabricated. The disadvantage of this method is that only specific adsorbable small molecules can be used, and three-dimensional nano-micro-wires cannot be obtained, and this method cannot obtain self-supporting nano-micro-structures, only nano-micro-wires fixed on the substrate can be obtained.

软印刷技术是近年来发展起来的制作立体微细结构的新方法,它利用弹性软印章(常见的是聚二甲基硅氧烷)来制备微结构,其核心是以软印章作为微图案的转移中介:例如可以通过复制模塑将母板表面的起伏结构复制到软印章上,然后以软印章吸附聚合物溶液进行压印,就可以实现分子转移或者纳微米结构的构建。Soft printing technology is a new method of making three-dimensional microstructures developed in recent years. It uses elastic soft stamps (commonly polydimethylsiloxane) to prepare microstructures, and its core uses soft stamps as the transfer of micropatterns. Intermediary: For example, the undulating structure on the surface of the mother board can be copied to the soft stamp by replica molding, and then the soft stamp can absorb the polymer solution for imprinting, so as to realize the molecular transfer or the construction of the nano-micron structure.

发明内容 Contents of the invention

本发明的目的是提出一种制作聚合物自支撑纳微米线的方法,运用已有的软印刷技术和湿法化学刻蚀制作聚合物自支撑纳微米线,使制备工艺简单、制备成本低廉,纳微米线的结构可控,生产效率高。The purpose of the present invention is to propose a method for making polymer self-supporting nano-micro wires, using the existing soft printing technology and wet chemical etching to make polymer self-supporting nano-micro wires, so that the preparation process is simple and the preparation cost is low. The structure of the nanometer wire is controllable and the production efficiency is high.

本发明提出的制作聚合物自支撑纳微米线的方法,包括以下步骤:The method for making polymer self-supporting nanometer wires proposed by the present invention comprises the following steps:

(1)制作具有起伏条纹微图案表面的母板;(1) making a master plate with a micro-patterned surface of undulating stripes;

(2)制作软印章:将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比3:1~20:1混合均匀,浇注到上述母板表面上,静置4~10分钟后,加热至20℃~80℃,反应1~8小时,固化后揭去母板,得到软印章;(2) Making soft stamps: Mix the silicone prepolymer of polydimethylsiloxane and the silicone crosslinking agent in a mass ratio of 3:1 to 20:1, pour it on the surface of the above-mentioned motherboard, and let it stand for 4 to 10 minutes. After 10 minutes, heat to 20°C-80°C, react for 1-8 hours, remove the mother board after curing, and obtain a soft seal;

(3)压印墨水溶液:将上述软印章浸入墨水溶液中,然后将该软印章压印在基板上,揭起软印章,在基板上得到由墨水溶液固化后的聚合物的起伏条纹微图案;(3) Embossing ink solution: immerse the above-mentioned soft seal in the ink solution, then emboss the soft seal on the substrate, lift the soft seal, and obtain the undulating stripe micropattern of the polymer solidified by the ink solution on the substrate ;

(4)刻蚀基板:用氢氟酸水溶液刻蚀基板,得到聚合物自支撑纳微米线。(4) Etching the substrate: Etching the substrate with hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

本发明提出的制作聚合物自支撑纳微米线的方法,以聚合物弹性体复制起伏条纹微图案表面(如偶氮类聚合物表面起伏光栅、光刻技术制备的图案化表面、摩擦法制备的微沟槽表面等)作为软印章,以聚合物材料(如聚酰亚胺、环氧树脂、聚甲基丙稀酸酯、偶氮聚合物、导电聚合物和其他通用聚合物等)溶解于溶剂中作为“墨水”溶液,然后用软印章,将“墨水”溶液压印在基板上(如玻璃、硅片、石英等),得到聚合物的纳微米级条纹微图案,再经过刻蚀剂(如氢氟酸)刻蚀去除基板,剥离出聚合物的自支撑纳微米线。取代常规的方法用于制作聚合物自支撑纳微米线(包括聚合物微导线),具有工艺简单、成本低、高效可控和适用广泛等优点。The method for making polymer self-supporting nano-micron wires proposed by the present invention uses a polymer elastomer to replicate a micro-patterned surface of undulating stripes (such as azo polymer surface undulating gratings, a patterned surface prepared by photolithography, and a friction method. Micro-grooved surface, etc.) as a soft stamp, dissolved in polymer materials (such as polyimide, epoxy resin, polymethacrylate, azo polymer, conductive polymer and other general polymers, etc.) As an "ink" solution in a solvent, and then use a soft stamp to imprint the "ink" solution on a substrate (such as glass, silicon wafer, quartz, etc.) to obtain a nano-micron-scale stripe micropattern of the polymer, and then pass through the etchant (such as hydrofluoric acid) etch to remove the substrate and peel off the self-supporting nano-micron wires of the polymer. It replaces conventional methods for making polymer self-supporting nano-micro wires (including polymer micro-wires), and has the advantages of simple process, low cost, high efficiency and controllability, and wide application.

附图说明 Description of drawings

图1是本发明提出的制作聚合物自支撑纳微米线的方法的过程示意图,其中(a)是本方法步骤(1)制作的母板,其中1代表母板;(b)是将聚合物浇注到母板上固化,其中2代表固化后的软印章;(c)是剥离母板后得到的软印章;(d)是浸入墨水溶液后的软印章,其中3代表墨水溶液;(e)是将软印章压印在基板上,其中4代表基板;(f)是揭去软印章,在基板上得到聚合物微图案,其中5代表墨水溶液固化后的聚合物;(g)是经过氢氟酸刻蚀基板后,得到的聚合物自支撑纳微米线。Fig. 1 is the schematic diagram of the process of the method for making polymer self-supporting nano-micro wires proposed by the present invention, wherein (a) is the mother board made in step (1) of the method, wherein 1 represents the mother board; (b) is the polymer Pouring onto the motherboard for curing, where 2 represents the cured soft stamp; (c) is the soft stamp obtained after peeling off the motherboard; (d) is the soft stamp immersed in the ink solution, where 3 represents the ink solution; (e) It is to emboss the soft stamp on the substrate, wherein 4 represents the substrate; (f) is to remove the soft stamp and obtain a polymer micropattern on the substrate, wherein 5 represents the polymer after the ink solution is cured; (g) is to pass hydrogen After etching the substrate with hydrofluoric acid, the obtained polymer self-supporting nanometer wire.

具体实施方式 Detailed ways

本发明提出的制作聚合物自支撑纳微米线的方法,其过程如图1所示,首先制作具有起伏条纹微图案表面的母板,如图1(a)所示。The process of the method for making polymer self-supporting nano-micro wires proposed by the present invention is shown in Figure 1. First, a master plate with a micro-patterned surface of undulating stripes is produced, as shown in Figure 1(a).

上述母板的制作方法可以有以下多种:The manufacturing method of above-mentioned mother board can have following multiple:

a、将环氧树脂基偶氮聚合物0.05~2克溶于1毫升N,N-二甲基甲酰胺中,溶液用0.2微米针头过滤器过滤,然后将过滤后的溶液在玻璃片上旋涂成膜,40~80℃干燥2~48小时,可得到表面光洁的环氧树脂基偶氮聚合物薄膜;以两束P偏振干涉的488nm Ar+激光照射偶氮聚合物薄膜,时间5~60分钟,得到具有表面起伏光栅的环氧树脂基偶氮聚合物薄膜,可作为具有表面起伏微纳米图案的母板使用,上述环氧树脂基偶氮聚合物的结构式为:a. Dissolve 0.05-2 grams of epoxy resin-based azo polymer in 1 ml of N, N-dimethylformamide, filter the solution with a 0.2 micron needle filter, and then spin-coat the filtered solution on a glass slide Form a film and dry at 40-80°C for 2-48 hours to obtain an epoxy resin-based azo polymer film with a smooth surface; irradiate the azo polymer film with two beams of P-polarized interference 488nm Ar + laser for 5-60 minutes, an epoxy resin-based azo polymer film with surface relief gratings is obtained, which can be used as a master plate with surface relief micro-nano patterns. The structural formula of the above-mentioned epoxy resin-based azo polymer is:

Figure C200610075663D00051
Figure C200610075663D00051

b、将光敏聚合物0.05~1克溶于1毫升N,N-二甲基甲酰胺中,溶液用0.2微米针头过滤器过滤,将过滤后的溶液在玻璃片上旋涂成膜,40~80℃干燥2~48h。然后将镀铬的图案化光掩膜紧贴放在旋涂膜上,在紫外光灯下进行曝光5~40分钟。曝光之后的旋涂膜在丙酮(或四氢呋喃)中浸泡10~60s,最后40~80℃干燥2~48小时即得到具有表面起伏微图案的母板,上述光敏聚合物可采用以下结构式的光敏聚合物材料(接枝率均为30%):b. Dissolve 0.05-1 g of photosensitive polymer in 1 ml of N, N-dimethylformamide, filter the solution with a 0.2-micron needle filter, and spin-coat the filtered solution on a glass slide to form a film, 40-80 ℃ dry 2 ~ 48h. Then put the chrome-plated patterned photomask close on the spin-coated film, and expose it under ultraviolet light for 5-40 minutes. After exposure, the spin-coated film is soaked in acetone (or tetrahydrofuran) for 10-60s, and finally dried at 40-80°C for 2-48 hours to obtain a master plate with surface relief micro-patterns. The above-mentioned photosensitive polymer can be photopolymerized by the following structural formula Material (graft rate is 30%):

Figure C200610075663D00061
Figure C200610075663D00061

c、商业化的光刻胶:HPR光刻胶15号(聚乙烯醇肉桂酸酯15号)或者光刻胶16号(聚乙烯醇氧乙醛肉桂酸酯16号)或者光刻胶BP218(300),经过涂胶、曝光、显影、定影、烘干等步骤,最后得到的表面起伏微图案作为母板。本方法采用的具体设备、工艺条件及参数均可采用光刻技术领域的常规技术实现;c, commercial photoresist: HPR photoresist No. 15 (polyvinyl alcohol cinnamate No. 15) or photoresist No. 16 (polyvinyl alcohol oxyacetaldehyde cinnamate No. 16) or photoresist BP218 ( 300), after steps such as gluing, exposure, development, fixing, drying, etc., the finally obtained surface relief micro-pattern is used as a master. The specific equipment, process conditions and parameters adopted in the method can be realized by conventional techniques in the field of photolithography;

d、镀铬的图案化模板(通常被用作光刻技术中的紫外光掩膜),直接购买获得。d. Chromium-plated patterned template (usually used as a UV mask in photolithography technology), which can be purchased directly.

然后制作上述起伏条纹微图案的阴模软印章:将聚二甲基硅氧烷(sylgard 184,购于Dow Corning公司)的硅胶预聚体和硅胶交联剂按质量比3:1~20:1混合均匀,浇注到上述具有起伏条纹微图案的母板表面上,静置4~10分钟后,加热固化,如图1(b)所示,固化反应温度40℃~80℃,反应时间1~8小时;或者浇注后室温静置8小时,让其自然固化。固化后剥离母板即可得到软印章,如图1(c)所示。Then make the female mold soft stamp of the above-mentioned undulating stripe micro-pattern: the silica gel prepolymer of polydimethylsiloxane (sylgard 184, purchased from Dow Corning company) and silica gel crosslinking agent are in mass ratio 3:1~20: 1 Mix evenly, pour it on the surface of the mother board with the micro-pattern of undulating stripes, let it stand for 4 to 10 minutes, and then heat and solidify, as shown in Figure 1(b), the curing reaction temperature is 40°C to 80°C, and the reaction time is 1 ~ 8 hours; or stand at room temperature for 8 hours after pouring to let it solidify naturally. The soft stamp can be obtained by peeling off the mother board after curing, as shown in Figure 1(c).

将聚合物溶解于溶剂中,此溶液作为软印章的墨水溶液使用。将上述软印章浸入墨水溶液中,软印章吸附墨水溶液后,如图1(d)所示,然后将该软印章压印在基板上,如图1(e)所示,保持软印章和基板表面紧密接触,数秒钟后揭起软印章,在基板上得到由墨水溶液固化后的聚合物的起伏条纹微图案,如图1(f)所示,其中的基板为玻璃片、硅片或石英片中的任意一种;其中的墨水溶液为以下可溶性聚合物溶液中的任意一种:The polymer is dissolved in a solvent, and this solution is used as an ink solution for soft stamps. The above-mentioned soft stamp is immersed in the ink solution, after the soft stamp absorbs the ink solution, as shown in Figure 1 (d), then the soft stamp is embossed on the substrate, as shown in Figure 1 (e), keeping the soft stamp and the substrate The surface is in close contact, and the soft stamp is lifted after a few seconds, and the undulating stripe micropattern of the polymer cured by the ink solution is obtained on the substrate, as shown in Figure 1(f), where the substrate is glass, silicon or quartz Any of the tablets; the ink solution therein is any of the following soluble polymer solutions:

a、环氧树脂基偶氮聚合物的四氢呋喃溶液,浓度0.05~20克/升;a, tetrahydrofuran solution of epoxy resin-based azo polymer, concentration 0.05~20 g/liter;

b、聚苯乙烯的四氢呋喃溶液,浓度0.1~25克/升;b. Tetrahydrofuran solution of polystyrene, concentration 0.1-25 g/L;

c、聚苯乙烯的甲苯溶液,浓度0.1~25克/升;c. Toluene solution of polystyrene, concentration 0.1-25 g/L;

d、聚(3-己基噻吩)的甲苯溶液,浓度0.05~25克/升;d, poly(3-hexylthiophene) toluene solution, concentration 0.05~25 g/liter;

e、聚(3-己基噻吩)的三氯甲烷溶液,浓度0.1~15克/升;E, the chloroform solution of poly(3-hexylthiophene), concentration 0.1~15 grams/liter;

f、聚苯胺的二氯甲烷溶液,浓度0.3~20克/升;f. Dichloromethane solution of polyaniline, concentration 0.3-20 g/L;

g、聚苯胺的三氯甲烷溶液,浓度0.2~25克/升;G, the chloroform solution of polyaniline, concentration 0.2~25 grams/liter;

h、聚乙烯的四氢呋喃溶液,浓度0.1~15克/升;h, tetrahydrofuran solution of polyethylene, concentration 0.1~15 g/liter;

i、双酚A型环氧树脂的四氢呋喃溶液,浓度0.2~10克/升;i, tetrahydrofuran solution of bisphenol A type epoxy resin, concentration 0.2~10 g/liter;

j、聚酰亚胺的N,N-二甲基甲酰胺溶液,浓度0.2~15克/升;j, N,N-dimethylformamide solution of polyimide, concentration 0.2~15 g/liter;

k、聚甲基丙烯酸甲酯的甲苯溶液,浓度0.2~10克/升;k, toluene solution of polymethyl methacrylate, concentration 0.2~10 g/liter;

l、含异山梨醇结构单元的聚酰亚胺的N,N-二甲基甲酰胺溶液,浓度0.05~30克/升;1. N,N-dimethylformamide solution of polyimide containing isosorbide structural unit, concentration 0.05~30 g/liter;

m、查尔酮取代的聚丙烯酸无规聚合物的乙醇溶液,浓度0.1~20克/升;m, ethanol solution of polyacrylic acid random polymer substituted by chalcone, concentration 0.1~20 g/liter;

n、查尔酮取代的聚丙烯酸无规聚合物的乙醇溶液,浓度0.1~20克/升;n, ethanol solution of polyacrylic acid random polymer substituted by chalcone, concentration 0.1~20 g/liter;

o、肉桂酸取代的聚丙烯酸无规聚合物的乙醇溶液,浓度0.1~20克/升。o. An ethanol solution of polyacrylic acid random polymer substituted by cinnamic acid, with a concentration of 0.1-20 g/L.

最后用氢氟酸的水溶液刻蚀基板,得到聚合物自支撑纳微米线,如图1(g)所示。刻蚀可以采用以下两种方式中的任意一种:Finally, the substrate is etched with an aqueous solution of hydrofluoric acid to obtain polymer self-supporting nanometer wires, as shown in Figure 1(g). Etching can be done in either of two ways:

a、将基板放在塑料器皿中,有聚合物微条纹的一面朝上,缓慢加入浓度0.05~30%的氢氟酸至超过石英基板上表面,待聚合物的微条纹结构从基板上剥离出来,即得到相应的聚合物的自支撑纳微米线。在微条纹结构的侧面加入氢氟酸,使刻蚀沿表面微条纹结构的侧面方向进行(即刻蚀进入的方向垂直于纳微米条纹结构的伸展方向)是更为有利的方式,可以得到更好的纳微米线剥离结果。刻蚀完成后可根据需要将聚合物自支撑纳微米线转移到其他目标基板上或者液面上;a. Put the substrate in a plastic container, with the polymer microstripe side facing up, slowly add hydrofluoric acid with a concentration of 0.05-30% to exceed the upper surface of the quartz substrate, and wait until the polymer microstripe structure is peeled off from the substrate out, that is, to obtain the corresponding self-supporting nano-micron wire of the polymer. Adding hydrofluoric acid to the side of the micro-stripe structure to make the etching proceed along the side direction of the surface micro-stripe structure (that is, the direction of etching entering is perpendicular to the extension direction of the nano-micro-stripe structure) is a more favorable way, and better results can be obtained. Nanowire stripping results. After the etching is completed, the polymer self-supporting nano-micron wires can be transferred to other target substrates or liquid surfaces as needed;

b、将浓度0.1~30%的氢氟酸加入塑料器皿中,倾斜基板(有聚合物图案的一面朝上)缓慢的浸入氢氟酸中,使聚合物的微条纹结构从基板上剥离下来,从而得到聚合物的自支撑纳微米线。沿垂直于微条纹伸展的方向浸入氢氟酸,使刻蚀沿着微条纹结构的侧面方向进行是更为有利的方式,可以得到更好的纳微米线剥离结果。刻蚀完成后可根据需要将聚合物自支撑纳微米线转移到其他目标基板上或者液面上。b. Add hydrofluoric acid with a concentration of 0.1 to 30% into a plastic container, and slowly immerse the inclined substrate (the side with the polymer pattern facing up) into the hydrofluoric acid to peel off the microstripe structure of the polymer from the substrate , so as to obtain self-supporting nano-micron wires of polymers. Immersing in hydrofluoric acid along the direction perpendicular to the extending direction of the microstripes, so that the etching is carried out along the side direction of the microstripes structure is a more favorable way, which can obtain better nano-micro-line stripping results. After the etching is completed, the polymer self-supporting nano-micron wires can be transferred to other target substrates or liquid surfaces as required.

以下介绍本发明的实施例:Introduce the embodiment of the present invention below:

实施例1Example 1

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to get a soft seal;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是5克/升的一种环氧树脂基偶氮聚合物的四氢呋喃溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该环氧树脂基偶氮聚合物的结构式为:(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the tetrahydrofuran solution of a kind of epoxy resin base azo polymer that concentration is 5 grams/liter, then this soft seal is embossed on the glass substrate, keeps After the soft seal is in close contact with the surface of the substrate for a few seconds, the soft seal is lifted, and a micro-pattern of polymer stripes is obtained on the substrate; the structural formula of the epoxy resin-based azo polymer is:

Figure C200610075663D00081
Figure C200610075663D00081

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例2Example 2

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, remove the mother board after curing to get a soft seal;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的一种环氧树脂基偶氮聚合物的四氢呋喃溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该环氧树脂基偶氮聚合物的结构式为:(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the tetrahydrofuran solution of a kind of epoxy resin base azo polymer that concentration is 0.5 g/liter, then this soft seal is embossed on the glass substrate, keeps After the soft seal is in close contact with the surface of the substrate for a few seconds, the soft seal is lifted, and a micro-pattern of polymer stripes is obtained on the substrate; the structural formula of the epoxy resin-based azo polymer is:

Figure C200610075663D00082
Figure C200610075663D00082

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例3Example 3

(1)用上述制作母板的方法中的工艺(c)用制作具有起伏条纹微图案表面的母板;(1) Using the process (c) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, remove the mother board after curing to get a soft seal;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的一种环氧树脂基偶氮聚合物的四氢呋喃溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该环氧树脂基偶氮聚合物的结构式为:(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the tetrahydrofuran solution of a kind of epoxy resin base azo polymer that concentration is 15 grams per liter, then this soft seal is embossed on the glass substrate, keeps After the soft seal is in close contact with the surface of the substrate for a few seconds, the soft seal is lifted, and a micro-pattern of polymer stripes is obtained on the substrate; the structural formula of the epoxy resin-based azo polymer is:

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例4Example 4

(1)用上述制作母板的方法中的工艺(d)用制作具有起伏条纹微图案表面的母板;(1) using the process (d) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至80℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 80°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是5克/升的聚苯乙烯(购于Alfa AESAR公司,分子量100000)的四氢呋喃溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the tetrahydrofuran solution of polystyrene (purchased in Alfa AESAR company, molecular weight 100000) that concentration is 5 g/liter, then this soft seal is embossed on glass substrate Keep the soft stamp in close contact with the surface of the substrate for a few seconds and then lift the soft stamp to obtain a micropattern of polymer undulating stripes on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例5Example 5

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的聚苯乙烯(购于Alfa AESAR公司,分子量100000)的四氢呋喃溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the tetrahydrofuran solution of polystyrene (purchased in Alfa AESAR company, molecular weight 100000) that concentration is 0.5 g/liter, then this soft seal is embossed on glass substrate Keep the soft stamp in close contact with the surface of the substrate for a few seconds and then lift the soft stamp to obtain a micropattern of polymer undulating stripes on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例6Example 6

(1)用上述制作母板的方法中的工艺(c)用制作具有起伏条纹微图案表面的母板;(1) Using the process (c) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的聚苯乙烯(购于Alfa AESAR公司,分子量100 000)的四氢呋喃溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the tetrahydrofuran solution of polystyrene (purchased in Alfa AESAR company, molecular weight 100 000) that concentration is 15 grams per liter, then this soft seal is embossed on glass On the substrate, keep the soft stamp in close contact with the surface of the substrate for a few seconds and then lift the soft stamp to obtain a polymer undulating stripe micropattern on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例7Example 7

(1)用上述制作母板的方法中的工艺(d)用制作具有起伏条纹微图案表面的母板;(1) using the process (d) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是5克/升的聚苯乙烯(购于Alfa AESAR公司,分子量100000)的甲苯溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the toluene solution of polystyrene (purchased in Alfa AESAR company, molecular weight 100000) that concentration is 5 grams per liter, then this soft seal is embossed on glass substrate Keep the soft stamp in close contact with the surface of the substrate for a few seconds and then lift the soft stamp to obtain a micropattern of polymer undulating stripes on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例8Example 8

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的聚苯乙烯(购于Alfa AESAR公司,分子量100000)的甲苯溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the toluene solution of polystyrene (purchased in Alfa AESAR company, molecular weight 100000) that concentration is 0.5 g/liter, then this soft seal is embossed on glass substrate Keep the soft stamp in close contact with the surface of the substrate for a few seconds and then lift the soft stamp to obtain a micropattern of polymer undulating stripes on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例9Example 9

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的聚苯乙烯(购于Alfa AESAR公司,分子量100000)的甲苯溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the toluene solution of polystyrene (purchased in Alfa AESAR company, molecular weight 100000) that concentration is 15 grams per liter, then this soft seal is embossed on glass substrate Keep the soft stamp in close contact with the surface of the substrate for a few seconds and then lift the soft stamp to obtain a micropattern of polymer undulating stripes on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例10Example 10

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(用上述氢氟酸水溶液刻蚀基板的方法3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是5克/升的聚(3-己基噻吩)的三氯甲烷,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(Method 3 of etching the substrate with the above-mentioned hydrofluoric acid aqueous solution) The above-mentioned soft stamp is immersed in an ink solution, which is chloroform of poly(3-hexylthiophene) with a concentration of 5 g/liter, and then the soft stamp is The stamp is imprinted on the glass substrate, and the soft stamp is kept in close contact with the surface of the substrate for a few seconds, then the soft stamp is lifted, and a polymer undulating stripe micro-pattern is obtained on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例11Example 11

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的聚(3-己基噻吩)的三氯甲烷,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the chloroform of poly(3-hexylthiophene) that concentration is 0.5 g/liter, then this soft seal is embossed on the glass substrate, keeps soft seal After being in close contact with the surface of the substrate for a few seconds, the soft stamp is lifted, and a micro pattern of polymer undulating stripes is obtained on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例12Example 12

(1)用上述制作母板的方法中的工艺(c)用制作具有起伏条纹微图案表面的母板;(1) Using the process (c) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的聚(3-己基噻吩)的三氯甲烷,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the trichloromethane that concentration is the poly(3-hexylthiophene) of 15 grams per liter, then this soft seal is embossed on the glass substrate, keeps soft seal After being in close contact with the surface of the substrate for a few seconds, the soft stamp is lifted, and a micro pattern of polymer undulating stripes is obtained on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合支撑纳微米线。(4) process (a) in the method for etching substrate with above-mentioned hydrofluoric acid aqueous solution, obtain polymerized Supports nanometer wires.

实施例13Example 13

(1)用上述制作母板的方法中的工艺(d)用制作具有起伏条纹微图案表面的母板;(1) using the process (d) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是5克/升的聚(3-己基噻吩)的甲苯溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the toluene solution of poly(3-hexylthiophene) that concentration is 5 grams/liter, then this soft seal is embossed on the glass substrate, keeps soft seal and After a few seconds of close contact with the surface of the substrate, the soft seal is lifted, and a micro-pattern of polymer undulating stripes is obtained on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例14Example 14

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的聚(3-己基噻吩)的甲苯溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the toluene solution of poly(3-hexylthiophene) that concentration is 0.5 g/liter, then this soft seal is embossed on the glass substrate, keeps soft seal and After a few seconds of close contact with the surface of the substrate, the soft seal is lifted, and a micro-pattern of polymer undulating stripes is obtained on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例15Example 15

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的聚(3-己基噻吩)的甲苯溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the toluene solution of poly(3-hexylthiophene) that concentration is 15 grams per liter, then this soft seal is embossed on the glass substrate, keeps soft seal and After a few seconds of close contact with the surface of the substrate, the soft seal is lifted, and a micro-pattern of polymer undulating stripes is obtained on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例16Example 16

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是5克/升的聚苯胺的三氯甲烷溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the trichloromethane solution that concentration is the polyaniline of 5 grams per liter, then this soft seal is embossed on the glass substrate, keeps soft seal and substrate surface closely After a few seconds of contact, the soft stamp is lifted to obtain a micropattern of undulating stripes of polymer on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例17Example 17

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的聚苯胺的三氯甲烷溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the trichloromethane solution that concentration is the polyaniline of 0.5 g/liter, then this soft seal is embossed on the glass substrate, keeps soft seal and substrate surface closely After a few seconds of contact, the soft stamp is lifted to obtain a micropattern of undulating stripes of polymer on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例18Example 18

(1)用上述制作母板的方法中的工艺(c)用制作具有起伏条纹微图案表面的母板;(1) Using the process (c) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的聚苯胺的三氯甲烷溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the chloroform solution that concentration is the polyaniline of 15 grams per liter, then this soft seal is embossed on the glass substrate, keeps soft seal and substrate surface closely After a few seconds of contact, the soft stamp is lifted to obtain a micropattern of undulating stripes of polymer on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例19Example 19

(1)用上述制作母板的方法中的工艺(d)用制作具有起伏条纹微图案表面的母板;(1) using the process (d) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是5克/升的聚苯胺的二氯甲烷溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the dichloromethane solution that concentration is the polyaniline of 5 grams per liter, then this soft seal is embossed on the glass substrate, keeps soft seal and substrate surface closely After a few seconds of contact, the soft stamp is lifted to obtain a micropattern of undulating stripes of polymer on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例20Example 20

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的聚苯胺的二氯甲烷溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the dichloromethane solution that concentration is the polyaniline of 0.5 g/liter, then this soft seal is embossed on the glass substrate, keeps soft seal and substrate surface closely After a few seconds of contact, the soft stamp is lifted to obtain a micropattern of undulating stripes of polymer on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例21Example 21

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的聚苯胺的二氯甲烷溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the dichloromethane solution that concentration is the polyaniline of 15 grams per liter, then this soft seal is embossed on the glass substrate, keeps soft seal and substrate surface closely After a few seconds of contact, the soft stamp is lifted to obtain a micropattern of undulating stripes of polymer on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例22Example 22

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的聚乙烯的四氢呋喃溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) Dip the above-mentioned soft stamp into the ink solution, which is a tetrahydrofuran solution of polyethylene with a concentration of 15 grams per liter, and then emboss the soft stamp on the glass substrate, keeping the soft stamp in close contact with the surface of the substrate for a few seconds After a few minutes, the soft stamp was lifted to obtain a micro-pattern of undulating stripes of the polymer on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例23Example 23

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的聚乙烯的四氢呋喃溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) Dip the above-mentioned soft stamp into the ink solution, which is a tetrahydrofuran solution of polyethylene with a concentration of 0.5 g/L, and then emboss the soft stamp on the glass substrate, keeping the soft stamp in close contact with the surface of the substrate for a few seconds After a few minutes, the soft stamp was lifted to obtain a micro-pattern of undulating stripes of the polymer on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例24Example 24

(1)用上述制作母板的方法中的工艺(c)用制作具有起伏条纹微图案表面的母板;(1) Using the process (c) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的双酚A型环氧树脂的四氢呋喃溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the tetrahydrofuran solution of the bisphenol A type epoxy resin that concentration is 15 grams per liter, then this soft seal is embossed on the glass substrate, keeps soft seal and After a few seconds of close contact with the surface of the substrate, the soft seal is lifted, and a micro-pattern of polymer undulating stripes is obtained on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例25Example 25

(1)用上述制作母板的方法中的工艺(d)用制作具有起伏条纹微图案表面的母板;(1) using the process (d) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的双酚A型环氧树脂的四氢呋喃溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the tetrahydrofuran solution of the bisphenol A type epoxy resin that concentration is 0.5 g/liter, then this soft seal is embossed on the glass substrate, keeps soft seal and After a few seconds of close contact with the surface of the substrate, the soft seal is lifted, and a micro-pattern of polymer undulating stripes is obtained on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例26Example 26

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的聚酰亚胺的N,N-二甲基甲酰胺溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the N, N-dimethylformamide solution of polyimide that concentration is 0.5 g/liter, then this soft seal is embossed on the glass substrate , keeping the soft stamp in close contact with the surface of the substrate for a few seconds and then lifting the soft stamp to obtain a polymer undulating stripe micropattern on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例27Example 27

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的聚酰亚胺的N,N-二甲基甲酰胺溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the N, N-dimethylformamide solution of polyimide that concentration is 15 grams per liter, then this soft seal is embossed on the glass substrate , keeping the soft stamp in close contact with the surface of the substrate for a few seconds and then lifting the soft stamp to obtain a polymer undulating stripe micropattern on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例28Example 28

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的聚甲基丙烯酸甲酯的甲苯溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the toluene solution of the polymethyl methacrylate that concentration is 15 grams per liter, then this soft seal is embossed on the glass substrate, keeps soft seal and substrate After the surface is in close contact for a few seconds, the soft stamp is lifted, and a micro-pattern of polymer undulating stripes is obtained on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例29Example 29

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的聚甲基丙烯酸甲酯的甲苯溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the toluene solution of the polymethyl methacrylate that concentration is 0.5 g/liter, then this soft seal is embossed on the glass substrate, keeps soft seal and substrate After the surface is in close contact for a few seconds, the soft stamp is lifted, and a micro-pattern of polymer undulating stripes is obtained on the substrate;

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例30Example 30

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的含异山梨醇结构单元的聚酰亚胺的N,N-二甲基甲酰胺溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该聚合物的结构式为:(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the N, N-dimethylformamide solution of the polyimide containing isosorbide structural unit that concentration is 15 grams per liter, then this soft seal The stamp is imprinted on the glass substrate, and the soft stamp is kept in close contact with the surface of the substrate for a few seconds, then the soft stamp is lifted, and a polymer undulating stripe micro-pattern is obtained on the substrate; the structural formula of the polymer is:

Figure C200610075663D00161
Figure C200610075663D00161

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例31Example 31

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的含异山梨醇结构单元的聚酰亚胺的N,N-二甲基甲酰胺溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该聚合物的结构式为:(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the N, N-dimethylformamide solution of the polyimide that contains isosorbide structural unit that concentration is 0.5 g/liter, then this soft seal The stamp is imprinted on the glass substrate, and the soft stamp is kept in close contact with the surface of the substrate for a few seconds, then the soft stamp is lifted, and a polymer undulating stripe micro-pattern is obtained on the substrate; the structural formula of the polymer is:

Figure C200610075663D00162
Figure C200610075663D00162

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例32Example 32

(1)用上述制作母板的方法中的工艺(c)用制作具有起伏条纹微图案表面的母板;(1) Using the process (c) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是5克/升的含异山梨醇结构单元的聚酰亚胺的N,N-二甲基甲酰胺溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该聚合物的结构式为:(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the N, N-dimethylformamide solution of the polyimide containing isosorbide structural unit that concentration is 5 grams/liter, then this soft seal The stamp is imprinted on the glass substrate, and the soft stamp is kept in close contact with the surface of the substrate for a few seconds, then the soft stamp is lifted, and a polymer undulating stripe micro-pattern is obtained on the substrate; the structural formula of the polymer is:

Figure C200610075663D00171
Figure C200610075663D00171

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例33Example 33

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的查尔酮取代的聚丙烯酸无规聚合物(接枝率为30%)的乙醇溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该聚合物的结构式为:(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the ethanol solution of the chalcone-substituted polyacrylic acid random polymer (graft rate 30%) that concentration is 15 g/liter, then this soft seal The stamp is imprinted on the glass substrate, and the soft stamp is kept in close contact with the surface of the substrate for a few seconds, then the soft stamp is lifted, and a polymer undulating stripe micro-pattern is obtained on the substrate; the structural formula of the polymer is:

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例34Example 34

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的查尔酮取代的聚丙烯酸无规聚合物(接枝率为30%)的乙醇溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该聚合物的结构式为:(3) the above-mentioned soft seal is immersed in the ink solution, and this ink solution is the ethanol solution of the chalcone-substituted polyacrylic acid random polymer (graft rate 30%) whose concentration is 0.5 g/liter, and then the soft seal The stamp is imprinted on the glass substrate, and the soft stamp is kept in close contact with the surface of the substrate for a few seconds, then the soft stamp is lifted, and a polymer undulating stripe micro-pattern is obtained on the substrate; the structural formula of the polymer is:

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例35Example 35

(1)用上述制作母板的方法中的工艺(c)用制作具有起伏条纹微图案表面的母板;(1) Using the process (c) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的查尔酮取代的聚丙烯酸无规聚合物(接枝率为30%)的乙醇溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该聚合物的结构式为:(3) above-mentioned soft seal is immersed in the ink solution, and this ink solution is the ethanol solution of the chalcone-substituted polyacrylic acid random polymer (graft rate 30%) that concentration is 15 g/liter, then this soft seal The stamp is imprinted on the glass substrate, and the soft stamp is kept in close contact with the surface of the substrate for a few seconds, then the soft stamp is lifted, and a polymer undulating stripe micro-pattern is obtained on the substrate; the structural formula of the polymer is:

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例36Example 36

(1)用上述制作母板的方法中的工艺(d)用制作具有起伏条纹微图案表面的母板;(1) using the process (d) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比5:1混合均匀,浇注到上述母板表面上,静置5分钟后,加热至60℃,反应1小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 5:1, pour it on the surface of the above-mentioned motherboard, let it stand for 5 minutes, heat it to 60°C, and react After 1 hour, remove the mother board after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的查尔酮取代的聚丙烯酸无规聚合物(接枝率为30%)的乙醇溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该聚合物的结构式为:(3) the above-mentioned soft seal is immersed in the ink solution, and this ink solution is the ethanol solution of the chalcone-substituted polyacrylic acid random polymer (graft rate 30%) whose concentration is 0.5 g/liter, and then the soft seal The stamp is imprinted on the glass substrate, and the soft stamp is kept in close contact with the surface of the substrate for a few seconds, then the soft stamp is lifted, and a polymer undulating stripe micro-pattern is obtained on the substrate; the structural formula of the polymer is:

Figure C200610075663D00182
Figure C200610075663D00182

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例37Example 37

(1)用上述制作母板的方法中的工艺(a)用制作具有起伏条纹微图案表面的母板;(1) Using the process (a) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比10:1混合均匀,浇注到上述母板表面上,静置8分钟后,加热至50℃,反应2小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel crosslinking agent evenly at a mass ratio of 10:1, pour it on the surface of the above-mentioned mother board, let it stand for 8 minutes, heat it to 50°C, and react After 2 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是0.5克/升的肉桂酸取代的聚丙烯酸无规聚合物(接枝率为30%)的乙醇溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该聚合物的结构式为:(3) The above-mentioned soft seal is immersed in the ink solution, and this ink solution is the ethanol solution of the polyacrylic acid random polymer (graft rate 30%) that the cinnamic acid replaces with concentration of 0.5 g/liter, then the soft seal Embossed on the glass substrate, keep the soft seal in close contact with the surface of the substrate for a few seconds, then lift the soft seal, and obtain a micro-pattern of polymer stripes on the substrate; the structural formula of the polymer is:

Figure C200610075663D00191
Figure C200610075663D00191

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(b),得到聚合物自支撑纳微米线。(4) Process (b) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

实施例38Example 38

(1)用上述制作母板的方法中的工艺(b)用制作具有起伏条纹微图案表面的母板;(1) Using the process (b) in the above-mentioned method for making a master plate to make a master plate with a micro-patterned surface of undulating stripes;

(2)将聚二甲基硅氧烷的硅胶预聚体和硅胶交联剂按质量比15:1混合均匀,浇注到上述母板表面上,静置10分钟后,加热至40℃,反应4小时,固化后揭去母板,得到聚合物软印章;(2) Mix the silica gel prepolymer of polydimethylsiloxane and the silica gel cross-linking agent evenly at a mass ratio of 15:1, pour it on the surface of the above-mentioned motherboard, let it stand for 10 minutes, heat it to 40°C, and react After 4 hours, the mother board is removed after curing to obtain a polymer soft stamp;

(3)将上述软印章浸入墨水溶液中,该墨水溶液为浓度是15克/升的肉桂酸取代的聚丙烯酸无规聚合物(接枝率为30%)的乙醇溶液,然后将该软印章压印在玻璃基板上,保持软印章和基板表面紧密接触数秒钟后揭起软印章,在基板上得到聚合物的起伏条纹微图案;该聚合物的结构式为:(3) The above-mentioned soft seal is immersed in the ink solution, and this ink solution is the ethanol solution of the polyacrylic acid random polymer (grafting rate 30%) that the cinnamic acid replaces with concentration of 15 grams per liter, then the soft seal Embossed on the glass substrate, keep the soft seal in close contact with the surface of the substrate for a few seconds, then lift the soft seal, and obtain a micro-pattern of polymer stripes on the substrate; the structural formula of the polymer is:

Figure C200610075663D00192
Figure C200610075663D00192

(4)用上述氢氟酸水溶液刻蚀基板的方法中的工艺(a),得到聚合物自支撑纳微米线。(4) Process (a) in the method of etching the substrate with the above hydrofluoric acid aqueous solution to obtain polymer self-supporting nanometer wires.

将上述各实施例制作而成的聚合物自支撑纳微米线转移到玻璃片上,在偏光显微镜下观察,或使用扫描电子显微镜、透射电子显微镜和原子力显微镜观测,可以观察到聚合物自支撑纳微米线。以上结果表明这是一种有效的快速制作聚合物自支撑纳微米线的新方法。Transfer the polymer self-supporting nano-micron wires produced in the above-mentioned embodiments to a glass plate, observe under a polarizing microscope, or use a scanning electron microscope, transmission electron microscope and atomic force microscope to observe, and you can observe that the polymer self-supporting nano-micron wires Wire. The above results show that this is an effective new method for rapidly fabricating polymer self-supporting nanowires.

Claims (3)

1, a kind of method of making polymer self-supporting nano-micron-line is characterized in that, this method may further comprise the steps:
(1) make the motherboard with the little patterned surfaces of fluctuating striped, the method for making of motherboard is:
Epoxy resin-matrix azobenzene polymer 0.05~2 gram is dissolved in 1 milliliter of N, in the dinethylformamide, solution filters with 0.2 micron syringe filters, the solution spin-coating film on glass sheet after will filtering then, 40~80 ℃ of dryings 2~48 hours obtain the azobenzene polymer film; 488 nanometer Ar with two bundle P polarization interferences +Laser radiation azobenzene polymer film, 5~60 minutes time, obtain having the azobenzene polymer film motherboard of surface relief grating, wherein the structural formula of epoxy resin-matrix azobenzene polymer is:
Figure C200610075663C00021
Or: photopolymer 0.05~1 gram is dissolved in 1 milliliter of N, in the dinethylformamide, solution filters with 0.2 micron syringe filters, with the solution spin-coating film on glass sheet after filtering, 40~80 ℃ of dryings 2~48 hours, patterning photomask with chromium plating is placed on the spin-coating film then, under ultraviolet lamp, exposed 5~40 minutes, spin-coating film after the exposure soaked in acetone or tetrahydrofuran 10~60 seconds, last 40~80 ℃ of dryings 2~48 hours, obtain having the motherboard of the little pattern of surface undulation, photopolymer wherein has following structural formula, and percent grafting is 30%:
Figure C200610075663C00022
(2) make soft seal: the silica gel performed polymer and the silica gel agent of dimethyl silicone polymer are mixed by mass ratio 3:1~20:1, are poured on the above-mentioned motherboard surface, leave standstill 4~10 minutes after, be heated to 40 ℃~80 ℃, reacted 1~8 hour, and threw off motherboard after the curing, obtain soft seal;
(3) impression ink solution: above-mentioned soft seal is immersed in the ink solution, should be stamped on the substrate by soft seal then, uncover soft seal, at the little pattern of fluctuating striped that obtains on the substrate by the polymkeric substance after the ink solution curing, wherein said substrate is any one in glass sheet, silicon chip or the piezoid;
(4) etch substrate: use the hydrofluoric acid aqueous solution etch substrate, obtain polymer self-supporting nano-micron-line.
2, the method for claim 1 is characterized in that wherein said ink solution is any one in the following polymer solution:
The tetrahydrofuran solution of a, epoxy resin-matrix azobenzene polymer, concentration 0.05~20 grams per liter;
The tetrahydrofuran solution of b, polystyrene, concentration 0.1~25 grams per liter;
The toluene solution of c, polystyrene, concentration 0.1~25 grams per liter;
The toluene solution of d, poly-(3-hexyl thiophene), concentration 0.05~25 grams per liter;
The chloroform soln of e, poly-(3-hexyl thiophene), concentration 0.1~15 grams per liter;
The dichloromethane solution of f, polyaniline, concentration 0.3~20 grams per liter;
The chloroform soln of g, polyaniline, concentration 0.2~25 grams per liter;
H, poly tetrahydrofuran solution, concentration 0.1~15 grams per liter;
The tetrahydrofuran solution of i, bisphenol A type epoxy resin, concentration 0.2~10 grams per liter;
The N of j, polyimide, dinethylformamide solution, concentration 0.2~15 grams per liter;
The toluene solution of k, polymethylmethacrylate, concentration 0.2~10 grams per liter;
L, contain the N of the polyimide of isobide structural unit, dinethylformamide solution, concentration 0.05~30 grams per liter;
The ethanolic solution of the polyacrylic acid atactic polymers that m, chalcone replace, concentration 0.1~20 grams per liter;
The ethanolic solution of the polyacrylic acid atactic polymers that n, chalcone replace, concentration 0.1~20 grams per liter;
The ethanolic solution of the polyacrylic acid atactic polymers that o, cinnamic acid replace, concentration 0.1~20 grams per liter.
3, the method for claim 1 is characterized in that wherein said method with the hydrofluoric acid aqueous solution etch substrate is:
Substrate is placed in the vessel, has one of micro polymer striped to face up, slowly add concentration and be 0.05~30% hydrofluorite, treat that little striated structure of polymkeric substance is peeled off from substrate, promptly obtain polymer self-supporting nano-micron-line to surpassing upper surface of base plate;
Or: with concentration is that 0.1~30% hydrofluorite adds in the vessel, and the inclination substrate faces up one of polymer pattern, immerses slowly in the hydrofluorite, and little striated structure of polymkeric substance is peeled off from substrate, obtains polymer self-supporting nano-micron-line.
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