CN100494926C - Temperature observation circuit - Google Patents
Temperature observation circuit Download PDFInfo
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- CN100494926C CN100494926C CNB2007100184306A CN200710018430A CN100494926C CN 100494926 C CN100494926 C CN 100494926C CN B2007100184306 A CNB2007100184306 A CN B2007100184306A CN 200710018430 A CN200710018430 A CN 200710018430A CN 100494926 C CN100494926 C CN 100494926C
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Abstract
The invention discloses a monitoring circuit capable of identifying whether the temperature of IC chip is higher than the temperature of safe operating area. The invention can monitor the variation of PN junction voltage, which is conducted by forward bias and flowing through a constant current, with temperature. The temperature monitoring circuit comprises a voltage bleeder circuit, a multi-output current source circuit, a temperature sensing circuit, and a voltage amplification circuit. The whole circuit does not use resistor unit. The gain of the voltage amplification circuit is controlled by forming positive feedback loop in the multiple amplification structures of the voltage amplification circuit, so that the circuit has dynamical characteristic of temperature hysteresis. Meanwhile, the positive feedback introduced into the voltage amplification circuit reduces the gain requirement to the voltage amplification circuit, and steepens the jump of the output signal of the circuit.
Description
Technical field
The present invention relates to SIC (semiconductor integrated circuit), be specifically related to the circuit that the temperature of SIC (semiconductor integrated circuit) is monitored.
Background technology
When the temperature of integrated circuit exceeded safe working temperature, circuit was cisco unity malfunction, even can be because overcurrent causes the damage to device in the integrated circuit, thereby needed temperature observation circuit that the temperature of circuit is monitored.As required, can set a high temperature threshold value temperature T 1, when circuit temperature reached T1, observation circuit provided an indicator signal that temperature is too high.According to the application scenario, this indicator signal can be used for the trigger pip of warning circuit, or is used for the frequency reducing of clock signal, the shutoff control signal of power device etc.
At present, the known a kind of temperature observation circuit of those skilled in the art as shown in Figure 1, this circuit is made of following components: (PTAT) current source circuit that is directly proportional with temperature, temperature sensor, and voltage comparator.The current source circuit that is directly proportional with temperature produces the electric current that raises and increase with temperature, and this electric current flows through the resistance R 2 of temperature sensor circuit, and the A point voltage is raise with temperature.Because the PN junction voltage of positively biased conducting has negative temperature coefficient, the emitter junction voltage Vbe of the bipolar transistor Q3 of temperature sensor circuit descend with the temperature rising, thereby the B point voltage descends with temperature.Like this, the voltage difference that A point and B are ordered rises with temperature and increases, and finally makes the output switching activity of voltage comparator.
Shared chip (die) area of the compatibility of circuit and target process and circuit is two factors must considering in the integrated circuit (IC) design.Digital CMOS process does not generally provide resistive element, even resistive element is provided, can require to increase operation and mask (mask) yet.In addition, resistive element also can take very big chip area.Therefore, the major defect of Fig. 1 circuit is: used resistive element, and incompatible with the digital CMOS semiconductor technology, increased production cost; The number of devices that needs is many, and the chip area that takies is big; Do not have the temperature hysteretic characteristic, promptly impel the output of temperature observation circuit, the indicating circuit temperature takes place cross the temperature of high tumble, to return to the temperature of upset of normal range identical with impelling output that the indicating circuit temperature takes place, when circuit temperature when low temperature rises to threshold temperature T1, observation circuit output is overturn, after this, when if temperature-control circuit makes circuit temperature fall back to T1, rather than fall back to the T2 place littler than T1, and circuit output signal overturns once more, and the indicated temperature control circuit quits work, after this, the very fast again rising of circuit temperature is overturn again in the output of T1 temperature place observation circuit, so repeatedly, cause the temperature-control circuit frequent starting, and integrated circuit itself can not be lowered the temperature fully.
Summary of the invention
For with digital CMOS semiconductor technology compatibility, reduce the chip area that temperature observation circuit takies, reduce production costs, the objective of the invention is to, provide a kind of to adopt MOS transistor and with the substrate PNP bipolar transistor (substrate PNP bipolar transistor) of CMOS process compatible, and have the temperature observation circuit of temperature hysteretic characteristic.
The technical solution used in the present invention is: a kind of temperature observation circuit is made of supply voltage bleeder circuit, multi-output current source circuit, temperature sensor circuit and voltage amplifier circuit.Entire circuit is not used resistive element, and the supply voltage bleeder circuit adopts active pull-up, is about to the MOS transistor of grid and drain electrode short circuit, at power lead to the structure of connecting between ground wire; The multi-output current source circuit adopts the single tube structure that the transistorized grid of PMOS and source electrode is connect fixed reference potential, or the inferior current source of Weir (Wilsoncurrent source), cascode current source (cascode current source) etc. do not need the current source structure of resistance; The substrate PNP transistor that temperature sensing circuit only uses two emitter junction series connection, emitters to be connected with the multi-output current source output terminal respectively; The active load that the load of voltage amplifier circuit uses MOS transistor to constitute.Voltage amplifier circuit adopts the structure of multistage amplifier circuit cascade, and by form positive feedback loop in the multistage structure for amplifying of voltage amplifier circuit, the gain with the control voltage amplifier circuit makes circuit have the dynamic perfromance of temperature hysteresis.Simultaneously, in voltage amplifier circuit, introduce positive feedback, make that also the gain to voltage amplifier circuit requires to reduce, and make the hopping edge of output signal of circuit precipitous.
By voltage amplifier circuit the PN junction change in voltage of the positively biased conducting of two series connection is amplified, reach the purpose that temperature is monitored.
The supply voltage bleeder circuit provides reference voltage for the multi-output current source circuit.The supply voltage bleeder circuit adopt in realization active pull-up at power lead to the structure of connecting between ground wire.For different supply voltages and output voltage requirement, only need to adjust the number or the device size (channel length L and channel width W) of the active pull-up that is connected in series.For example, embodiment circuit shown in Figure 3 has adopted by two active pull-ups (Mp1 and Mn2) and has constituted the supply voltage bleeder circuit with an output terminals A.
The multi-output current source circuit provides steady current for temperature sensor circuit and voltage amplifier circuit.The multi-output current source can adopt a plurality of source electrodes to connect power supply, grid connects fixed reference voltage, drain electrode realizes as the PMOS transistor of current output terminal, also can be as required, and adopt complex structure such as cascode current source, the inferior current source of Weir and exchange the big current source structure of output resistance.For example, embodiment shown in Figure 3 has adopted the multi-output current source structure that is connect single tube (Mp2, Mp3 and the Mp4) formation of fixed voltage by 3 grids and source electrode.
Temperature sensor circuit is made of two substrate PNP transistors.The transistorized base stage of first PNP is connected with ground with collector, emitter except that with also be connected a current output terminal in multi-output current source is connected with the base stage of second PNP pipe.The grounded collector of second PNP pipe, emitter is as the output terminal of temperature sensor, be connected with the output terminal in multi-output current source and the input end of voltage amplifier circuit, its magnitude of voltage be two PNP pipe emitter junction voltages VBE's and.Adopt being of two PNP pipe emitter junction voltage VBE with the reason of signal as the amplifying circuit input signal, the gate-source voltage VGS that the reinforcing MOS transistor operate as normal needs is about about 1V, and the emitter junction voltage VBE of single positively biased conducting is about 0.7V, if temperature sensing circuit only adopts a PNP pipe, then the output voltage of temperature sensing circuit need be by level displacement circuit and amplifying circuit coupling.More than two PNP pipe to adopt above-mentioned connected modes be in order to have satisfied the requirement that the substrate PNP transistor collector must be connected with the potential minimum in the circuit.
For obtaining enough voltage gains, voltage amplifier circuit adopts the structure of multistage amplifier circuit cascade, and takes back the grid of the active load pipe of prime voltage amplifier circuit by output that will back step voltage amplifying circuit, constitutes positive feedback loop.For guaranteeing that this is fed back to positive feedback, answer the polarity of caution signal.For example, with the output terminal of back level amplifier stage, be connected with the grid of the active load pipe of prime voltage amplifier circuit, with the conducting degree of control load pipe, thereby controlled the ac small signal output resistance of preamplifying circuit, reach the purpose of dynamic control voltage amplifying circuit voltage gain.And this loop can be positive feedback can be by following procedure declaration: the output of current step voltage amplifier stage raises, if back step voltage amplifier stage input changes in the opposite direction with output voltage signal, then back level amplifying circuit output voltage descends, the PMOS load pipe conducting degree of preamplifying circuit is improved, the output end voltage of preamplifying circuit is further drawn in to the power supply direction, and vice versa.
The characteristics of this temperature observation circuit are: only adopted MOS transistor and with the substrate PNP transistor of CMOS process compatible, non-resistance element, thereby not only can adopt analog cmos technology and BiCMOS technology also can adopt digital CMOS process processing; Circuit structure is simple, and the component number of use is few, and the chip area that needs is little; By in voltage amplifier circuit, introducing positive feedback loop, make circuit have the temperature hysteretic characteristic; Be suitable for low supply voltage work, the minimum voltage of requirement is the active pull-up gate-source voltage VGS sum of connecting in the voltage branch circuit.
Description of drawings
Fig. 1 is a conventional temperature observation circuit structure.
Fig. 2 is the structured flowchart of temperature observation circuit of the present invention.
Fig. 3 is an embodiment of the degree observation circuit of temperature of the present invention.
The present invention is described in further detail below in conjunction with drawings and Examples.
Embodiment
An embodiment circuit of temperature observation circuit of the present invention comprises supply voltage bleeder circuit 10, multi-output current source circuit 20, temperature sensor circuit 30 and the voltage amplifier circuit 40 that is made of common source amplifier stage and reverser amplifier stage as shown in Figure 3.
Described supply voltage bleeder circuit 10 is: the source electrode as the PMOS transistor Mp1 of active pull-up is connected with power supply, grid and drain electrode short circuit, and be connected with the A point, source ground as the nmos pass transistor Mnl of active pull-up, grid and drain electrode short circuit, and also be connected with the A point, the A point is the output terminal of supply voltage bleeder circuit.
Described multi-output current source circuit 20, comprised that source electrode is connected with power supply, PMOS transistor Mp2, Mp3 and Mp4 that grid is connected with voltage branch circuit output terminals A point, their drain electrode is the multi-output current source output terminal, respectively with temperature sensor circuit in substrate PNP transistor Q1, the collector of Q2, the drain electrode of amplifying NMOS pipe Mn2 with common source in the voltage amplifier circuit is connected.
Described temperature sensor circuit 30 is: the base stage of substrate PNP transistor Q1, collector are connected with ground, and emitter is connected with the drain electrode of Mp2 pipe and the base stage of second substrate PNP transistor Q2; The emitter of substrate PNP transistor Q2 is connected with the drain electrode of PMOS pipe Mp3, and base stage is connected with the emitter of substrate PNP transistor Q1 and the drain electrode of Mp2 pipe, and collector is connected with ground; The B point is the output terminal of temperature sensing circuit, its voltage be Q1 pipe emitter junction voltage VBEQ1 and Q2 pipe emitter junction voltage VBEQ2's and, its temperature coefficient is identical with the temperature coefficient that Q1, Q2 manage emitter junction.
Described voltage amplifier circuit 40 voltage amplifier circuits adopt the structure of multistage amplifier circuit cascade, by PMOS transistor Mp5, Mp6, constitute with nmos pass transistor Mn2, Mn3, the source ground of Mn2, the output terminal B of grid jointing temp sensor circuit, the drain electrode of the drain electrode of drain electrode and Mp5 pipe and the Mp4 pipe in multi-output current source, and Mp6 manages, the grid of Mn3 pipe connects, the source electrode of Mp5 pipe is connected with power supply, grid is connected with the drain electrode of Mp6 pipe, Mn3 pipe, the source electrode of Mp6 pipe is connected with power supply, and the source electrode of Mn3 pipe is connected with ground.
By form positive feedback loop in the multistage structure for amplifying of voltage amplifier circuit, the gain with the control voltage amplifier circuit makes circuit have the dynamic perfromance of temperature hysteresis; Simultaneously, in voltage amplifier circuit, introduce positive feedback, make that also the gain to voltage amplifier circuit requires to reduce, and make the hopping edge of output signal of circuit precipitous.
Below the principle of work of temperature observation circuit embodiment shown in Figure 3 is set forth.
Along with temperature rises, because in the temperature sensor circuit, the emitter junction voltage VBE of substrate PNP transistor Q1, Q2 has negative temperature coefficient, the B point voltage rises with temperature and descends, and in the voltage amplifier circuit, the C point voltage rises thereupon, and the D point voltage descends.When circuit temperature rises to high temperature threshold value temperature T 1, Mp5 pipe beginning conducting, the C point voltage is further risen, like this, from the C point, through the phase inverter amplifier stage, get back to the C point by the Mp5 pipe again, constituted a positive feedback loop, making the rapid saltus step of D point voltage is low level, and the indication chip temperature has reached high temperature threshold value temperature T 1.At this moment, because the D point voltage is low, the Mp5 pipe is operated in non-saturated region, value when making the equivalent ac small signal output resistance of common source voltage amplifier circuit be lower than the Mp5 pipe to turn-off, the voltage amplification gain diminishes, and circuit also is that the response sensitivity of variation of temperature reduces to the variation of B point voltage.After this, when chip temperature falls after rise, the output of temperature observation circuit can not be got back to high level in the place's saltus step of T1 temperature, and need to wait for that chip temperature drops to low temperature threshold value T2 place's saltus step lower than T1, make observation circuit have the temperature hysteretic characteristic.In temperature decline process, positive feedback loop still works: when temperature dropped to low temperature threshold temperature T2, the B point voltage rose, and the C point voltage descends, and the D point voltage rises, and Mp5 pipe conducting degree weakens, and the C point voltage is further descended.This positive feedback loop has guaranteed that the observation circuit output signal at low temperature threshold temperature T2 place, also saltus step can take place reliably, rapidly.
Claims (3)
1. temperature observation circuit, it is characterized in that, this temperature observation circuit is made of supply voltage bleeder circuit, multi-output current source circuit, temperature sensor circuit and voltage amplifier circuit, the supply voltage bleeder circuit is connected with the multi-output current source circuit, the multi-output current source circuit links to each other with temperature sensor circuit, voltage amplifier circuit respectively, and entire circuit is not used resistive element; Wherein:
Described supply voltage bleeder circuit adopts active pull-up, is about to the MOS transistor of grid and drain electrode short circuit, at power lead to the structure of connecting between ground wire;
Described multi-output current source circuit adopts the single tube structure that the transistorized grid of PMOS and source electrode is connect fixed reference potential, or the inferior current source of Weir, cascode current source structure;
The substrate PNP transistor that described temperature sensor circuit only uses two emitter junction series connection, emitters to be connected with the multi-output current source output terminal respectively, the active load that the load of voltage amplifier circuit uses MOS transistor to constitute;
Described voltage amplifier circuit adopts the structure of multistage amplifier circuit cascade, and by form positive feedback loop in the multistage structure for amplifying of voltage amplifier circuit, the gain with the control voltage amplifier circuit makes circuit have the dynamic perfromance of temperature hysteresis; Simultaneously, in voltage amplifier circuit, introduce positive feedback, make that also the gain to voltage amplifier circuit requires to reduce, and make the hopping edge of output signal of circuit precipitous.
2. temperature observation circuit as claimed in claim 1, it is characterized in that described temperature sensing circuit is made of two substrate PNP transistors, the base stage of first substrate PNP transistor is connected with ground wire with collector, emitter is connected with an output terminal of current source, the base stage of second substrate PNP transistor is connected with the emitter of first substrate PNP transistor, collector is connected with ground wire, and emitter is connected with another output terminal of current source.
3. temperature observation circuit as claimed in claim 1, it is characterized in that described voltage amplifier circuit is made of the multistage amplifier circuit cascade, be connected with the grid of the active load of prime amplifier stage by output terminal, to constitute positive feedback loop back step voltage amplifier stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100184306A CN100494926C (en) | 2007-08-08 | 2007-08-08 | Temperature observation circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100184306A CN100494926C (en) | 2007-08-08 | 2007-08-08 | Temperature observation circuit |
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| CN101105413A CN101105413A (en) | 2008-01-16 |
| CN100494926C true CN100494926C (en) | 2009-06-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102231549A (en) * | 2011-07-04 | 2011-11-02 | 重庆长安汽车股份有限公司 | Battery management chip |
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| JP2010048628A (en) * | 2008-08-20 | 2010-03-04 | Sanyo Electric Co Ltd | Temperature sensor circuit |
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| US8931953B2 (en) * | 2010-05-27 | 2015-01-13 | The Hong Kong University Of Science And Technology | Low voltage low power CMOS temperature sensor circuit |
| CN102494791B (en) * | 2011-12-30 | 2015-08-05 | 上海集成电路研发中心有限公司 | Built-in temperature sensor |
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2007
- 2007-08-08 CN CNB2007100184306A patent/CN100494926C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231549A (en) * | 2011-07-04 | 2011-11-02 | 重庆长安汽车股份有限公司 | Battery management chip |
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| CN101105413A (en) | 2008-01-16 |
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