CN104407640B - Temperature self-adaptation Modulating Power pipe - Google Patents
Temperature self-adaptation Modulating Power pipe Download PDFInfo
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- CN104407640B CN104407640B CN201410505601.8A CN201410505601A CN104407640B CN 104407640 B CN104407640 B CN 104407640B CN 201410505601 A CN201410505601 A CN 201410505601A CN 104407640 B CN104407640 B CN 104407640B
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- 238000002347 injection Methods 0.000 claims description 21
- 239000007924 injection Substances 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000036413 temperature sense Effects 0.000 description 1
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Abstract
Temperature self-adaptation Modulating Power pipe, comprise signal input part and power tube grid, it is characterized in that, also comprise grid control circuit, described grid control circuit is made up of pull down resistor, dropping resistor, temperature sensing device and the first signal input tube, secondary signal input pipe; Described first signal input tube is connected between power supply and pull down resistor, pull down resistor ground connection, pull down resistor is connected power tube grid with the common port of the first signal input tube, described signal input part connects secondary signal input pipe control end, described dropping resistor and temperature sensing device are connected between the drain electrode of secondary signal input pipe and ground, secondary signal input pipe is PMOS, its source electrode connects power supply, the control end of drain electrode connection first signal input tube, the output voltage of described temperature sensing device is negative temperature coefficient.The adjustment that the present invention only utilizes additional minority device can realize power tube thermal value, enables the uninterrupted work of power tube, avoids meaningless shutdown loss.
Description
Technical field
The invention belongs to field of semiconductor manufacture, relate to the Design and manufacture of power tube, particularly relate to a kind of temperature self-adaptation Modulating Power pipe.
Background technology
Semiconductor power device is the single device possessing output relatively high power ability utilizing semiconductor material and semiconductor fabrication process manufacture, be widely used in amplifier, Switching Power Supply or driving circuit, in existing application circuit solution, usually multiple power device is all needed, can respectively as uses such as amplifying signal, power switch and output stages.
Along with the progress of semiconductor technology, minimum feature breaks through micron level already, arrive nanometer scale, due to constantly reducing of live width, the power density of semi-conductor chip, particularly power device improves constantly, and single semi-conductor chip can provide the output current that ampere level is even higher, working current and the thermal value of chip constantly increase, to encapsulation and the use formation severe challenge of power tube.
Although there are the various temperature protection circuits for chip overheating; but depend on operational amplifier, comparer or reference voltage to realize more; design complicated and need to take suitable area; for the power device of single encapsulation; do not have then to be difficult to during the module such as reference voltage, comparer realize; and existing temperature protection circuit mostly is closes power device or whole chip itself at once when temperature exceedes setting value, limited adjustment can not be carried out to temperature and make chip continue normal work.
Summary of the invention
For the power tube overcoming prior art does not have special temperature protection circuit, or existing temperature protection circuit can not carry out limited adjustment to chip or power tube, ensures the technological deficiency of device continuous firing, the invention discloses a kind of temperature self-adaptation Modulating Power pipe.
Temperature self-adaptation Modulating Power pipe of the present invention, comprise signal input part and power tube grid, it is characterized in that, also comprise grid control circuit, described grid control circuit is made up of pull down resistor, dropping resistor, temperature sensing device and the first signal input tube, secondary signal input pipe;
Described first signal input tube is connected between power supply and pull down resistor, pull down resistor ground connection, pull down resistor is connected power tube grid with the common port of the first signal input tube, described signal input part connects secondary signal input pipe control end, described dropping resistor and temperature sensing device are connected between the drain electrode of secondary signal input pipe and ground, secondary signal input pipe is PMOS, its source electrode connects power supply, the control end of drain electrode connection first signal input tube, the output voltage of described temperature sensing device is negative temperature coefficient.
Concrete, described power tube is NMOS tube, and the first signal input tube is NMOS tube or NPN pipe.
Concrete, described temperature sensing device is NPN pipe, and the grounded emitter of NPN pipe, base stage is connected with collector and connects with dropping resistor.
Preferably, described NPN pipe is positioned near power tube or power tube central area.
Preferably, described NPN pipe is positioned at power tube central area, and described power tube is NMOS tube;
Described NPN pipe comprises the base stage 3 be positioned on power tube substrate 6, collector 4 and emitter 2, wherein emitter 2 is the N injection region of side near power tube source electrode 1, a described N injection region opposite side is N trap 5, N trap inside has the P injection region of close emitter and the 2nd N injection region near P injection region, described P injection region is as the base stage of NPN pipe, and the 2nd N injection region is as the collector of NPN pipe.
Further, described N trap has the P type isolation well that the degree of depth is greater than N trap, the current potential ground connection of P type isolation well except with other sides of emitter junction.
Concrete, described pull down resistor and dropping resistor are that multiple polycrystalline resistors that shape is identical are formed by connecting.
Preferably, described pull down resistor resistance is 0.5-2 megohm.
Preferably, also Anti-static device is connected with between described signal input part and power supply.
Temperature self-adaptation Modulating Power pipe of the present invention, only utilizes the adjustment that additional minority device can realize power tube thermal value, enables the uninterrupted work of power tube, avoid meaningless shutdown loss.
Accompanying drawing explanation
Fig. 1 is a kind of embodiment that temperature sensing device of the present invention adopts NPN pipe;
Fig. 2 is that temperature sensing device of the present invention adopts the position view of NPN pipe in power tube;
In figure, Reference numeral name is called: M2-secondary signal input pipe T-temperature sensing device 1-power tube source electrode 2-emitter 3-base stage 4-collector 5-N trap 6-substrate 7-P type isolation well 8-power tube drains.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Temperature self-adaptation Modulating Power pipe of the present invention, comprise signal input part and power tube grid, it is characterized in that, also comprise grid control circuit, described grid control circuit is made up of pull down resistor R1, dropping resistor R2, temperature sensing device and the first signal input tube M1, secondary signal input pipe M2;
Described first signal input tube is connected between power supply and pull down resistor, pull down resistor ground connection, pull down resistor is connected power tube grid with the common port of the first signal input tube, described signal input part connects secondary signal input pipe control end, described dropping resistor and temperature sensing device are connected between the drain electrode of secondary signal input pipe and ground, secondary signal input pipe is PMOS, its source electrode connects power supply, the control end of drain electrode connection first signal input tube, the output voltage of described temperature sensing device is negative temperature coefficient.
Adopt NPN triode as temperature sensing device, power tube is NMOS tube, signal input tube is NMOS tube or NPN pipe, the base emitter voltage VBE of NPN triode follows temperature variation and changing inversely, along with the rising of temperature, VBE declines with a more constant coefficient, be generally 2.2 millivolts every degree Celsius, NPN triode is arranged in the temperature sense region of power tube, such as, around power tube, when power tube normally works, the heat produced makes triode temperature raise, VBE declines, because triode connects into diode form, triode pressure drop is declined, in use, usually constant at the voltage of signal input part, for secondary signal input pipe, source electrode connects power supply, its VGS is equal, output current is equal, on dropping resistor, pressure drop is identical, therefore along with temperature raises, at the grid of the first signal input tube, voltage can decline, to the first signal input tube, grid voltage decline can cause the reduction of output current, thus pressure drop on pull down resistor R1 is reduced, power tube grid voltage reduces, power tube current reduces thereupon.Pull down resistor R1 and dropping resistor R2 preferable temperature coefficient low and be easy to by the integrated polycrystalline resistor of stand CMOS, high resistant polysilicon technology can be adopted, utilize the resistant series of the rectangular in form that multiple wide length is all equal, obtain the resistance needed, for reducing the power consumption of R1 and R2, resistance should reach megaohm rank, is preferably taken at 0.5-2 megohm.
For improving the device reliability after encapsulation further, between described signal input part and power supply, being also connected with Anti-static device, such as GGMOS or diode, SCR device etc., making this device possess antistatic effect.
Temperature sensing device is arranged on side or the central area of power tube, for power NMOS tube, the present invention preferably adopts preferred implementation as depicted in figs. 1 and 2, temperature sensing device NPN pipe is positioned at power tube central area, described NPN pipe comprises the base stage 3 be positioned on power tube substrate 6, collector 4 and emitter 2, wherein emitter 2 is the N injection region of side near power tube source electrode 1, a described N injection region opposite side is N trap 5, N trap inside has the P injection region of close emitter and the 2nd N injection region near P injection region, described P injection region is as the base stage of NPN pipe, 2nd N injection region is as the collector of NPN pipe.
Aforesaid way is adopted directly in the P type substrate of power NMOS tube, to construct NPN triode, technique is simple and compatible, adopt the N trap surrounding base stage and collector, the base stage of this horizontal NPN pipe and collector and substrate are realized electric isolution, simultaneously, because collector is identical with N trap doping type, the actual large collector achieving an encirclement base stage, the surface of contact of collector and base stage is increased, disperse electric force lines distribution, while improving triode enlargement factor, enhance the withstand voltage properties of this triode.
Further preferred implementation is: described N trap has except with other sides of emitter junction the current potential ground connection that the degree of depth is greater than P type isolation well 7, the P type isolation well of N trap.
Adopt aforementioned p-type isolation well, avoid the N trap of NPN triode, substrate P and the power NMOS tube cellular unit closed on form horizontal parasitic triode, when big current fluctuates, produce voltage at resistance substrate and cause this horizontal parasitic triode conducting, cause actual bolt-lock effect.
Previously described is each preferred embodiment of the present invention, preferred implementation in each preferred embodiment is if not obviously contradictory or premised on a certain preferred implementation, each preferred implementation can stack combinations use arbitrarily, design parameter in described embodiment and embodiment is only the invention proof procedure in order to clear statement inventor, and be not used to limit scope of patent protection of the present invention, scope of patent protection of the present invention is still as the criterion with its claims, the equivalent structure change that every utilization instructions of the present invention and accompanying drawing content are done, in like manner all should be included in protection scope of the present invention.
Claims (9)
1. temperature self-adaptation Modulating Power pipe, comprise signal input part and power tube grid, it is characterized in that, also comprise grid control circuit, described grid control circuit is made up of pull down resistor, dropping resistor, temperature sensing device and the first signal input tube, secondary signal input pipe;
Described first signal input tube is connected between power supply and pull down resistor, pull down resistor ground connection, pull down resistor is connected power tube grid with the common port of the first signal input tube, described signal input part connects secondary signal input pipe control end, described dropping resistor and temperature sensing device are connected between the drain electrode of secondary signal input pipe and ground, secondary signal input pipe is PMOS, its source electrode connects power supply, the control end of drain electrode connection first signal input tube, the output voltage of described temperature sensing device is negative temperature coefficient.
2. temperature self-adaptation Modulating Power pipe as claimed in claim 1, it is characterized in that, described power tube is NMOS tube, and the first signal input tube is NMOS tube or NPN pipe.
3. temperature self-adaptation Modulating Power pipe as claimed in claim 1, is characterized in that, described temperature sensing device is NPN pipe, and the grounded emitter of NPN pipe, base stage is connected with collector and connects with dropping resistor.
4. temperature self-adaptation Modulating Power pipe as claimed in claim 3, is characterized in that, described NPN pipe is positioned near power tube or power tube central area.
5. temperature self-adaptation Modulating Power pipe as claimed in claim 3, it is characterized in that, described NPN pipe is positioned at power tube central area, and described power tube is NMOS tube;
Described NPN pipe comprises the base stage (3) be positioned on power tube substrate (6), collector (4) and emitter (2), wherein emitter (2) is for side is near a N injection region of power tube source electrode (1), a described N injection region opposite side is N trap (5), N trap inside has the P injection region of close emitter and the 2nd N injection region near P injection region, described P injection region is as the base stage of NPN pipe, and the 2nd N injection region is as the collector of NPN pipe.
6. temperature self-adaptation Modulating Power pipe as claimed in claim 5, is characterized in that, described N trap has the P type isolation well that the degree of depth is greater than N trap, the current potential ground connection of P type isolation well except with other sides of emitter junction.
7. temperature self-adaptation Modulating Power pipe as claimed in claim 1, it is characterized in that, described pull down resistor and dropping resistor are that multiple polycrystalline resistors that shape is identical are formed by connecting.
8. temperature self-adaptation Modulating Power pipe as claimed in claim 1, it is characterized in that, described pull down resistor resistance is 0.5-2 megohm.
9. temperature self-adaptation Modulating Power pipe as claimed in claim 1, is characterized in that, be also connected with Anti-static device between described signal input part and power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410505601.8A CN104407640B (en) | 2014-09-28 | 2014-09-28 | Temperature self-adaptation Modulating Power pipe |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410505601.8A CN104407640B (en) | 2014-09-28 | 2014-09-28 | Temperature self-adaptation Modulating Power pipe |
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| Publication Number | Publication Date |
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| CN104407640A CN104407640A (en) | 2015-03-11 |
| CN104407640B true CN104407640B (en) | 2015-07-29 |
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| CN104882443B (en) * | 2015-05-15 | 2017-10-31 | 四川广义微电子股份有限公司 | The integrated chip structure of MOS switch condenser network |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006100690A (en) * | 2004-09-30 | 2006-04-13 | Matsushita Electric Ind Co Ltd | Power transistor temperature protection device |
| CN101098124A (en) * | 2007-07-16 | 2008-01-02 | 浙江三维通信股份有限公司 | TDD RF high power LDMOS amplifier gate voltage control circuit |
| US20080238529A1 (en) * | 2007-03-29 | 2008-10-02 | Mitsubishi Electric Corporation | Temperature detection circuit |
| CN101546920A (en) * | 2008-03-24 | 2009-09-30 | 三美电机株式会社 | Charge control circuit and charge controlling semiconductor integrated circuit |
| US20110309776A1 (en) * | 2010-06-18 | 2011-12-22 | Mitsubishi Electric Corporation | Semiconductor circuit device including switching element |
| CN202586798U (en) * | 2012-02-23 | 2012-12-05 | 深圳市绿能芯科技有限公司 | IGBT inverter |
-
2014
- 2014-09-28 CN CN201410505601.8A patent/CN104407640B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006100690A (en) * | 2004-09-30 | 2006-04-13 | Matsushita Electric Ind Co Ltd | Power transistor temperature protection device |
| US20080238529A1 (en) * | 2007-03-29 | 2008-10-02 | Mitsubishi Electric Corporation | Temperature detection circuit |
| CN101098124A (en) * | 2007-07-16 | 2008-01-02 | 浙江三维通信股份有限公司 | TDD RF high power LDMOS amplifier gate voltage control circuit |
| CN101546920A (en) * | 2008-03-24 | 2009-09-30 | 三美电机株式会社 | Charge control circuit and charge controlling semiconductor integrated circuit |
| US20110309776A1 (en) * | 2010-06-18 | 2011-12-22 | Mitsubishi Electric Corporation | Semiconductor circuit device including switching element |
| CN202586798U (en) * | 2012-02-23 | 2012-12-05 | 深圳市绿能芯科技有限公司 | IGBT inverter |
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| CN104407640A (en) | 2015-03-11 |
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