CN103063317B - Built-in temperature sensor - Google Patents
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- CN103063317B CN103063317B CN201210552748.3A CN201210552748A CN103063317B CN 103063317 B CN103063317 B CN 103063317B CN 201210552748 A CN201210552748 A CN 201210552748A CN 103063317 B CN103063317 B CN 103063317B
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Abstract
The present invention relates to technical field of semiconductors, provide a built-in temperature sensor, including：Basic circuit unit, copped wave unit, resistor trimming unit, electric fuse array and R C filter network.To eliminate non-ideal factor offset voltage, mismatch and the noise of built-in temperature sensor using copped wave unit；Meanwhile, realize the raising further of precision further using resistor trimming unit, and with electric fuse array, the control bit needed for resistor trimming unit is integrated in chip, effective control packaging cost, and ensure that the high integration of device.Additionally, the built-in temperature sensor that the present invention provides to realize the normalization of output voltage also by R C filter network, finally give the high accuracy built-in temperature sensor eliminating technogenic influence, consistent output result on different chips.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to built-in temperature sensor technology.
Background technology
In the modern life, the detection of temperature information and monitoring are always focus of attention, especially in food, medical treatment, defend
It is raw etc. that daily-life related that field is even more essential.Therefore, detect and control the chip of temperature and product to have
It is widely applied, the same species of temperature sensor product as core technology is various.As the thermoelectricity for the outer temperature detection of piece
Occasionally, built-in temperature sensor of temperature detection etc. is realized using the PN junction temperature characterisitic of audion.
Compared with built-in temperature sensor, the outer temperature sensor of piece has higher precision and accuracy, however, due to place
Outside piece, its area occupied is big, under the development trend that integrated level improves constantly, increasingly becomes the development bottle of temperature sensor
Neck.Further, since chip in working order under, the inside and outside temperature difference is larger, and the such outer temperature sensor of such as thermocouple is
Chip internal temperature detection demand cannot be met.In this case, can temperature sensing on the piece of real-time monitoring chip temperature
Device gradually causes and payes attention in the industry.However, because most temperature sensor all to be realized using PN junction temperature characterisitic detecting, and PN junction
Temperature characterisitic affected by technique, voltage etc. larger, for general semiconductor structure, the precision of built-in temperature sensor, especially
Precision difference between the built-in temperature sensor of different chips is larger.
Fig. 1 is built-in temperature sensor circuit structure diagram in prior art.As shown in figure 1, in prior art, temperature on piece
Sensor includes some field effect transistor M 101 ~ M112, bipolar transistor Q101 ~ Q103 and operational amplifier I101, electricity
Resistance R101, R102, wherein, the characteristic parameter of field effect transistor M 101 ~ M112 is identical it is assumed that operational amplifier
I101 does not have offset voltage VOS, and bipolar transistor Q101 ~ Q103 and field effect transistor M 101 ~ M112 is coupling completely,
Then this built-in temperature sensor Zhong Ge road electric current all same, and in the presence of operational amplifier I101, its two input VN and
The voltage of VP is also identical, can be obtained according to the fundamental voltage current formula of bipolar transistor：Bipolar transistor Q101 launches junction voltage：, bipolar transistor Q102 transmitting junction voltage：, wherein, IPTATFor field effect
Answer the PTAT output current with temperature change in ratio that the current mirror of transistor composition produces, VTFor threshold voltage, and, I0For bipolar transistor saturation current, and, μ is electron mobility, niDense for intrinsic carrier
Degree, k is Boltzmann Changshu, and T is thermodynamic temperature.Thus the emitter junction of bipolar transistor Q101, Q102 can be obtained further
Voltage difference：, andVbeVoltage fall on resistance R101, then, accordingly
, output voltage, further,, wherein, k1WithBecome positive correlation, and less with the relation of temperature.It follows that the output voltage of built-in temperature sensor and temperature
Degree is linear.
And in general built-in temperature sensor, all realized using the CMOS technology being more suitable for IC development trend.But
In CMOS technology, the either passive device such as the active device such as field-effect transistor, bipolar transistor or resistance capacitance, all
There is certain mismatch, these mismatches are that between the built-in temperature sensor causing different chips, output difference is other important former
Cause.As shown in figure 1, it is considered to the offset voltage V of operational amplifier under the actual working state of chipOSAnd field effect transistor
In the case of pipe M101 ~ M112 and bipolar transistor Q101 ~ Q103 is unmatched, the output voltage of built-in temperature sensor, wherein k2WithPositive correlation is become to close
System,It is the current error being caused due to the mismatch of field effect transistor M 101 ~ M112.It can be seen that
Exist operational amplifier offset, field-effect transistor and bipolar transistor unmatched in the case of, built-in temperature sensor is defeated
The relation going out voltage with temperature can be greatly affected.And the impact due to technique, the offset voltage between different chips and
All there is difference in field-effect transistor, the mismatch parameter of bipolar transistor, thus causing different chip chamber built-in temperature sensors
Output voltage there is bigger difference.
In order to eliminate this output difference, in prior art, adopt resistor trimming more（trim）Method, at a certain temperature,
By adjusting the adjustable resistance of control chip output, so that different chips obtains consistent output result at such a temperature, from
And avoid the different built-in temperature sensor precision difference that the mismatch of device causes.But, once chip temperature changes,
So consistent under former design temperature output result, is still likely to occur bigger difference at a temperature of new, or even producing ratio does not have
There is accuracy error that also will be big under resistor trimming.
Additionally, needing more control bit to control resistance sizes using resistor trimming technology, if control bit is all caused
Outside piece, packaging cost can be greatly increased.Meanwhile, the introducing of excessive control bit, for high-precision circuit design, undoubtedly will
Introduce more noises, have impact on the precision of built-in temperature sensor and integrated circuit further.
How continuous development with CMOS technology and the continuous improvement of semiconductor device integrated level, eliminate technique shadow
Ring, the high accuracy built-in temperature sensor with concordance output result is provided, become integrated circuit and develop urgent need solution further
Problem certainly.
Content of the invention
Technology to be solved by this invention is to provide a built-in temperature sensor, can eliminate technogenic influence, in different cores
Consistent output result on piece.
For solving above-mentioned technical problem, the invention provides a built-in temperature sensor, include basic circuit unit and cut
Ripple unit, wherein：Basic circuit unit includes：Current mirroring circuit, provides described built-in temperature sensor work required electric current
Mirror electric current and the bias current of described copped wave unit；PTAT current biasing circuit, including common base, the first of common collector,
Two bipolar transistors；3rd bipolar transistor, for producing output voltage.Copped wave unit includes：Control circuit of chopping, including field
The clock control circuit that effect transistor is formed；Chopping operational amplifier, the current mirroring circuit being formed including field-effect transistor,
Amplifier input circuit, amplifier load, phase inverter and chop control switch.
As optional technical scheme, the built-in temperature sensor that the present invention provides also includes R-C filter network, described R-
C filter network includes one or more resistance-capacitances pair, for realizing the normalization of output voltage.Further, R-C filtering
Network includes 7 resistance-capacitances pair.
As optional technical scheme, the built-in temperature sensor that the present invention provides also includes resistor trimming unit, is used for
Realize the fine setting to output voltage.This resistor trimming unit includes：N resistance, described resistant series form resistance string；（n+1）
Individual field-effect transistor, wherein, n >=2 and n are integer, and described field-effect transistor drain electrode connects described resistance and respectively holds, and source electrode is even
The output being connected together as described resistor trimming unit, grid connects control voltage.
Further, the output of described resistor trimming unit connects described R-C filter network, and described resistance string is connected to institute
State between the 3rd bipolar transistor emitter pole and current mirroring circuit.
As optional technical scheme, the built-in temperature sensor that the present invention provides also includes electric fuse array, for reality
The now control to resistor trimming unit.
Further, electric fuse array includes multiple electric fuse units, and described electric fuse unit includes：Fuse, resistance, the
First, the second current source, first, second field-effect transistor, and voltage comparator circuit, wherein：Described first, second effect
The grid answering transistor connects Read signal, and respectively via fuse and resistance eutral grounding, drain electrode connects first, second electricity to source electrode respectively
Stream source, and connect two inputs of described voltage comparator circuit respectively, the output of described voltage comparator circuit is as described
The output signal of electric fuse unit.
Further, described first, second current source output current is equal, and described resistance is 500 Ω ~ 1500 Ω.
Further, described electric fuse array includes（n+1）Individual electric fuse unit, wherein, n >=2 and n are integer.
It is an advantage of the current invention that on the premise of sensor requirements on meeting general piece, to be eliminated using copped wave unit
Operational amplifier offset voltage and the mismatch of field-effect transistor and bipolar transistor, that is,：Eliminate built-in temperature sensor
Non-ideal factor offset voltage, mismatch and noise.Meanwhile, the built-in temperature sensor that the present invention provides also adopts electricity further
Resistance fine-adjusting unit realizes the raising further of precision, and is integrated in the control bit needed for resistor trimming unit with electric fuse array
In chip, effective control packaging cost, and ensure that the high integration of device.Additionally, temperature sensing on the piece of present invention offer
Device to realize the normalization of output voltage also by R-C filter network, finally gives elimination technogenic influence, has on different chips
There is the high accuracy built-in temperature sensor of conforming output result.
Brief description
Fig. 1 is built-in temperature sensor circuit structure diagram in prior art；
The built-in temperature sensor circuit structure diagram that Fig. 2 provides for the specific embodiment of the invention；
The chopping operational amplifier circuit structure diagram that Fig. 3 provides for the specific embodiment of the invention；
The resistor trimming element circuit structure chart that Fig. 4 provides for the specific embodiment of the invention；
Fig. 5 a shows structural representation for the electric fuse array that the specific embodiment of the invention provides；
The electric fuse element circuit structure chart that Fig. 5 b provides for the specific embodiment of the invention.
Specific embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with the enforcement to the present invention for the accompanying drawing
Mode is described in further detail.Those skilled in the art the content disclosed by this specification can understand the present invention easily
Other advantages and effect.The present invention can also be carried out by addition different specific embodiments or apply, this explanation
Every details in book can also be based on different viewpoints and application, without departing from the spirit of the present invention carry out various modify or
Change.Additionally, if no special instructions, in this specific embodiment involved " connection " refer both to be electrically connected relation.
The built-in temperature sensor circuit structure diagram that Fig. 2 provides for the specific embodiment of the invention.
As shown in Fig. 2 the built-in temperature sensor that this specific embodiment provides includes：Basic circuit unit and copped wave list
Unit.
Wherein：Described basic circuit unit includes：Current mirroring circuit 100, provides described built-in temperature sensor work institute
The mirror currents needing and the bias current of described copped wave unit；PTAT current biasing circuit 200, including common base, altogether current collection
First bipolar transistor Q201 of pole, the second bipolar transistor Q202；3rd bipolar transistor Q203, for producing output electricity
Pressure.
In this specific embodiment, current mirroring circuit 100 includes field effect transistor M 201 ~ M208.As shown in Fig. 2 field
The grid of effect transistor M201, M203, M205 and M207, first source is had to link together, and above-mentioned each field effect transistor
The first of pipe has source to connect working power VDD；Field effect transistor M 202, the first of M204, M206, M208 there is source respectively
Connect field effect transistor M 201, the second of M203, M205 and M207 have source, the second of field-effect transistor 202 has source
It is connected with its grid.Above-mentioned field effect transistor M 201 ~ M208 forms current mirroring circuit 100, provides described upper temperature sensing
The required mirror currents of device work and the bias current I of described copped wave unitbias.As most preferred embodiment, field effect transistor
Pipe M201 ~ M208 is PMOS transistor, and first has source to be source electrode, and second has source to be drain electrode.
In this specific embodiment, PTAT current biasing circuit 200 includes the first bipolar transistor of common base, common collector
Pipe Q201, the second bipolar transistor Q202, that is,：The base stage of the first bipolar transistor Q201 and the second bipolar transistor Q202, collection
Electrode links together, and is grounded.The emitter stage of the first bipolar transistor Q201 connects field effect transistor in current mirroring circuit 100
The second of pipe M202 has source；The emitter stage of the second bipolar transistor Q202 connects field-effect transistor in current mirroring circuit 100
The second of M204 has source.As most preferred embodiment, the emitter stage of the second bipolar transistor Q202 and current mirroring circuit 100 midfield
The second of effect transistor M204 has between source and is also associated with the first load RR1, so that PTAT current biasing circuit 200 produces
The required PTAT current of raw built-in temperature sensor work.
In this specific embodiment, the base stage of the 3rd bipolar transistor Q203 and grounded collector, emitter voltage conduct
The raw output voltage of built-in temperature sensor.
It is pointed out that the basic circuit unit involved by built-in temperature sensor in this specific embodiment includes
Current mirroring circuit 100, PTAT current biasing circuit 200 and produce the 3rd bipolar transistor Q203 of output voltage interior each
Circuit structure is the common knowledge of those skilled in the art, can adopt but be not limited to above-mentioned particular circuit configurations and connect pass
System, will not be described here.
In this specific embodiment, copped wave unit 300 includes：Control circuit of chopping, including field effect transistor M 209 ~
The clock control circuit that M212 is formed；Chopping operational amplifier I1, the current mirroring circuit being formed including field-effect transistor, amplifier
Input circuit, amplifier load, phase inverter and chop control switch.
In the copped wave unit 300 of this specific embodiment, field effect transistor M 210, the grid of M212 connect clock signal
CLK, field effect transistor M 209, the grid of M211 connect clock signal clk 0；The first of field effect transistor M 209 has source
Source is had to connect the second active of field-effect transistor M202 in current mirroring circuit 100 with the second of field effect transistor M 210
End, as an input VN of chopping operational amplifier I1；The first of field effect transistor M 212 has source and field effect transistor
The second of pipe M211 has source to connect second of field-effect transistor M202 in current mirroring circuit 100 and has source, as copped wave fortune
Calculate another input VP of amplifier I1；And the second of field effect transistor M 209, M212 has source to connect to put to copped wave computing
The inverting input of big device I1；Field effect transistor M 210, the first of M211 source is had to connect to chopping operational amplifier I1's
In-phase input end.
As most preferred embodiment, field effect transistor M 209 ~ M212 is nmos pass transistor, and it first has source to be source electrode,
Second has source to be drain electrode.
The chopping operational amplifier circuit structure diagram that Fig. 3 provides for this specific embodiment.
As shown in figure 3, chopping operational amplifier I1 includes field effect transistor M 301 ~ M320, wherein, field-effect transistor
M301, M302, M303, M314, M315, M316, M319, M320 constitute current mirror：Field effect transistor M 301, M302, M303
Grid link together, first has source to connect to supply voltage VDD, and the second of field effect transistor M 301 have source and
Grid links together；And the second of field effect transistor M 319, M314 have source be respectively connecting to field effect transistor M 301,
The second of M302 has source, and field effect transistor M 319, M320 grid are connected, field effect transistor M 314, M315, M316 grid
Extremely connected, the second of field effect transistor M 320 has source and grid to link together, field effect in input current mirror circuit 100
The bias current I that transistor M206 providesbias, field effect transistor M 314, the first of M315, M316, M319, M320 have source
Ground connection.
As most preferred embodiment, field effect transistor M 301, M302, M303 are PMOS transistor, field-effect transistor
M314, M315, M316, M319, M320 are nmos pass transistor, and first has source to be source electrode, and second has source to be drain electrode.
As shown in figure 3, in the chopping operational amplifier I1 of this specific embodiment, field effect transistor M 312, M313 shape
Become operational amplifier input to pipe, the grid of field effect transistor M 312 as the in-phase input end of chopping operational amplifier I1,
The grid of field effect transistor M 313 is as the inverting input of chopping operational amplifier I1, field effect transistor M 312, M313
Second have source to be respectively connecting to field effect transistor M 315, the second of M316 have source.As most preferred embodiment, field effect
Transistor M312, M313 are PMOS transistor, and first has source to be source electrode, and second has source to be drain electrode.
As shown in figure 3, in the chopping operational amplifier I1 of this specific embodiment, field effect transistor M 304, M305,
M310, M311 constitute load, and field effect transistor M 304, the grid of M305 link together, and first has source to be all connected with power supply
Voltage VDD, second has source to connect field effect transistor M 310 respectively, the second of M311 have source；And field-effect transistor
The first of M310, M311 has source to be respectively connecting to field effect transistor M 312, the second of M313 have source, grid and field effect
The first of transistor M312, M313 has source, the second of field effect transistor M 303 has source to link together.As optimal reality
Apply example, field effect transistor M 304, M305 are PMOS transistor, field effect transistor M 310, M311 are nmos pass transistor, first
Source is had to be source electrode, second has source to be drain electrode.
As shown in figure 3, in the chopping operational amplifier I1 of this specific embodiment, field effect transistor M 306, M307,
M308, M309 constitute chop control switch, and field effect transistor M 306, the grid of M308 connect clock control signal CLK0, the
One has source to be respectively connecting to field effect transistor M 304, the second of M305 have source；Field effect transistor M 307, the grid of M309
Pole connects clock control signal CLK, and first has source to be respectively connecting to field effect transistor M 306, the second of M304 have source；
Field effect transistor M 308, the second of M309 source is had to link together, as the outfan of chopping operational amplifier I1.As
Most preferred embodiment, field effect transistor M 306, M307, M308, M309 are PMOS transistor, and first has source to be source electrode, the
Two have source to be drain electrode.
As shown in figure 3, in the chopping operational amplifier I1 of this specific embodiment, field effect transistor M 317, M318 structure
Become phase inverter, its grid is all connected with clock control signal CLK0, and the two second has source to link together, field-effect transistor
The first of M317 has source to connect supply voltage VDD, the first active end ground connection of field effect transistor M 318.Implement as optimal
Example, field effect transistor M 317 is PMOS transistor, and field effect transistor M 318 is nmos pass transistor, and first has source to be source
Pole, second has source to be drain electrode.
In this specific embodiment, copped wave unit 300 is used for reducing low-frequency noise, and can eliminate the imbalance of operational amplifier
Voltage, and the mismatch of all field-effect transistors and bipolar transistor can be equivalent to the offset voltage of amplifier, therefore,
The offset voltage eliminating amplifier can eliminate the impact that most of transistor mismatches factor.The function of copped wave unit 300 is main
To be realized by chopping operational amplifier I1 and field effect transistor M 209, M210, M211, M212, it is mainly for low-frequency noise
Application.In general, the imbalance of operational amplifier can regard low-frequency noise as, mainly pass through clock signal clk by low frequency signal
Move high frequency treatment, then realized by filtering.Meanwhile, copped wave unit 300 can also be realized the imbalance of operational amplifier and do not stop
Switch in VN and VP port, and by clock signal clk control, finally within an average time, realize VN and VP all
There is an identical imbalance, thus realizing the removal to chopping operational amplifier I1 imbalance, making VN and VP be operated in identical electricity
Pressure, realizes the impact that technique is brought to built-in temperature sensor further.
In this specific embodiment, as shown in Fig. 2 built-in temperature sensor also includes R-C filter network 400, it includes m
Individual resistance-capacitance pair（M >=1 and m are integer）, wherein, resistance R1、R2……RmSeries connection, and electric capacity CiOne end and resistance Ri、Ri+1
Connect, the other end is grounded（1≤i ＜ m and i is integer）.R-C filter network 400 is used for realizing the normalization of output voltage, its
In, the size of m to be determined by the ripple of output voltage VO and the frequency size of clock signal clk, as most preferred embodiment, m
=7.
The built-in temperature sensor that this specific embodiment provides also includes resistor trimming unit I2, for realizing to output
The fine setting of voltage.
Fig. 4 is resistor trimming element circuit structural representation in this specific embodiment.
As shown in figure 4, in this specific embodiment, resistor trimming unit I2 includes：Resistance R401 ~ R410, field effect is brilliant
Body pipe M401 ~ M411, wherein, resistance R401 ~ R410 is cascaded, and the resistance string ends A being formed, B are resistor trimming
Unit I2 two incoming end；The second of field effect transistor M 401 ~ M411 has source to be connected to each of resistance R401 ~ R410
End, first has source to be connected together as the output VRO of described resistor trimming unit I2, and its grid connects control bit RO respectively
<0>~ RO<10>.As most preferred embodiment, field effect transistor M 401 ~ M411 is nmos pass transistor, and first has source to be source
Pole, second has source to be drain electrode.Herein, field effect transistor M 401 ~ M411 is nmos pass transistor as switching transistor, by
Control bit RO<0>~ RO<10>Control its on off state, in working order under, above-mentioned field effect transistor M 401 ~ M411 only has
One conducting, thus realize the fine setting to output result.
As alternative embodiment, resistor trimming unit I2 includes n resistance, and described resistant series form resistance string；（n+
1）Individual field-effect transistor, wherein, n >=2 and n are integer.I.e.：Series resistance quantity in resistor trimming unit I2 is not subject to this
Specific embodiment enumerates restriction, can need to set according to design.
Understand in conjunction with Fig. 2, in this specific embodiment, field effect transistor M 207, M208 constitute current source and resistance is micro-
Adjust unit I2, bipolar transistor Q203 to form the output par, c of built-in temperature sensor, produce output voltage VRO.And resistance is micro-
The A end of tune unit I2 connects the second of field effect transistor M 208 source, and B end connects the emitter stage of bipolar transistor Q203,
Its outfan connects described R-C filter network 400, will filtered for the output voltage VRO of resistor trimming unit I2 rear output normalizing
Change voltage VO.
In this specific embodiment, provide the circuit structure of control bit needed for resistor trimming unit I2 simultaneously.Fig. 5 a and
Fig. 5 b is respectively electric fuse array and electric fuse element circuit structure chart in this specific embodiment.
As shown in Figure 5 a, the built-in temperature sensor that this specific embodiment provides also includes electric fuse array.Electric fuse
Array includes some electric fuse units（Efuse-unit）, each electric fuse unit in the presence of input signal is for Read, output
Control bit RO<i>, for realizing the control to resistor trimming unit I2.
As shown in Figure 5 b, electric fuse unit（Efuse-unit）Including：Fuse Fuse, resistance R501, the first current source
I501, the second current source I502, the first field effect transistor M 501, the second field effect transistor M 502, and voltage comparator
Circuit 500, wherein：Described first, second field effect transistor M 501, the grid of M502 connect Read signal, and first has source
It is grounded via fuse Fuse and resistance R501 respectively, second has source to connect first, second current source I501, I502 respectively, and
Connect two inputs of described voltage comparator circuit 500 respectively.And voltage comparator circuit 500 includes：3rd current source
I503, field effect transistor M 503 ~ M506, wherein：Field effect transistor M 503, the grid of M504 link together, and first has
Source is all grounded, and second has source to be respectively connecting to field effect transistor M 505, the second of M506 have source；And field effect transistor
The first of pipe M505, M506 has source to be connected to the 3rd current source I505, and it is brilliant that its grid connects first, second field effect respectively
The second of body pipe M501, M502 has source, as two inputs of voltage comparator circuit 500, field effect transistor M 504,
The second of M506 has the outfan as voltage comparator circuit 500 for the source, namely the outfan of electric fuse unit, output control
Position RO.As most preferred embodiment, first, second field effect transistor M 501, M502 and field effect transistor M 503, M504 are
Nmos pass transistor, field effect transistor M 505, M506 are PMOS transistor, and first has source to be source electrode, and second has source to be leakage
Pole.
In this embodiment, first, second current source I501, I502 output current is equal, described resistance
For 500 Ω ~ 1500 Ω, it is generally concentrated at 1000 Ω, according to the device property of fuse Fuse, when fuse Fuse does not fuse
When, the resistance of fuse Fuse is 200 Ω, and after working as fuse Fuse fusing, its resistance value can reach 5000 Ω.Therefore,
When fuse Fuse is unblown, its resistance value is 200 Ω, less than the resistance value of resistance R501, therefore, the second field-effect transistor
The second of M502 has source voltage terminal to be more than the second of the first field effect transistor M 501 and has source voltage terminal, now, electric fuse unit
Output control position RO be low level, the field-effect transistor in its corresponding resistor trimming unit I2 controlling is not turned on；When need
When control bit to be adjusted is output as high level, then fuse fuse Fuse, and now, the resistance value of fuse Fuse reaches 5000 Ω, far
More than the resistance value of resistance R501, the second of the second field effect transistor M 502 has source voltage terminal to be less than the first field-effect transistor
The second of M501 has source voltage terminal, and the output control position RO of electric fuse unit is high level, its corresponding resistor trimming list controlling
Field-effect transistor conducting in first I2.Thus, you can by the electric fuse array that is made up of electric fuse unit to resistor trimming
The resistance of unit I2 is finely adjusted.
It is pointed out that in electric fuse array electric fuse unit quantity, brilliant with field effect in resistor trimming unit I2
Body pipe quantity is identical.
The built-in temperature sensor that this specific embodiment provides, on the premise of sensor requirements on meeting general piece,
To eliminate the mismatch of operational amplifier offset voltage and field-effect transistor and bipolar transistor using copped wave unit 300,
I.e.：Eliminate non-ideal factor offset voltage, mismatch and the noise of built-in temperature sensor.Meanwhile, temperature on the piece that the present invention provides
The raising further of precision also realized further by degree sensor using resistor trimming unit I2, and with electric fuse array, resistance is micro-
The control bit needed for unit I2 is adjusted to be integrated in chip, effective control packaging cost, and ensure that the high integration of device.This
Outward, the built-in temperature sensor that the present invention provides to realize the normalization of output voltage also by R-C filter network 400, finally
The high accuracy built-in temperature sensor of technogenic influence, the consistent output result on different chips of being eliminated.
Although by referring to some of the preferred embodiment of the invention, being shown and described to the present invention,
It will be understood by those skilled in the art that can to it, various changes can be made in the form and details, without departing from this
Bright spirit and scope.
Claims (8)
1. a kind of built-in temperature sensor, including basic circuit unit and copped wave unit, wherein：
Described basic circuit unit includes：Current mirroring circuit, provides described built-in temperature sensor work required current mirror electricity
Stream and the bias current of described copped wave unit；PTAT current biasing circuit, including common base, first, second pair of common collector
Gated transistors；3rd bipolar transistor, for producing output voltage；
Described copped wave unit includes：Control circuit of chopping, the clock control circuit being formed including field-effect transistor；Copped wave computing
Amplifier, the current mirroring circuit being formed including field-effect transistor, amplifier input circuit, amplifier load, phase inverter and copped wave
Controlling switch；
Described built-in temperature sensor also includes electric fuse array, for realizing the control to resistor trimming unit；Described electric smelting
Silk array includes multiple electric fuse units, and described electric fuse unit includes：Fuse, resistance, first, second current source, first,
Two field-effect transistors, and voltage comparator circuit, wherein：The grid of described first, second field-effect transistor connects
Read signal, respectively via fuse and resistance eutral grounding, drain electrode connects first, second current source to source electrode respectively, and connects institute respectively
State two inputs of voltage comparator circuit, the output of described voltage comparator circuit is the output letter of described electric fuse unit
Number.
2. built-in temperature sensor according to claim 1 is it is characterised in that described built-in temperature sensor also includes R-
C filter network, described R-C filter network includes one or more resistance-capacitances pair, for realizing the normalization of output voltage.
3. built-in temperature sensor according to claim 2 is it is characterised in that described R-C filter network includes 7 electricity
Resistance-electric capacity pair.
4. built-in temperature sensor according to claim 2 is it is characterised in that described built-in temperature sensor also includes electricity
Resistance fine-adjusting unit, for realizing the fine setting to output voltage.
5. built-in temperature sensor according to claim 4 is it is characterised in that described resistor trimming unit includes：N electricity
Resistance, described resistant series form resistance string；(n+1) individual field-effect transistor, wherein, n >=2 and n are integer, and described field effect is brilliant
The drain electrode of body pipe connects described resistance and respectively holds, and source electrode is connected together as the output of described resistor trimming unit, and grid connects control
Voltage processed.
6. built-in temperature sensor according to claim 5 is it is characterised in that the output of described resistor trimming unit connects
Described R-C filter network, described resistance string is connected between described 3rd bipolar transistor emitter pole and current mirroring circuit.
7. built-in temperature sensor according to claim 1 is it is characterised in that described first, second current source output is electric
Stream is equal, and the resistance of described electric fuse array is 500 Ω～1500 Ω.
8. built-in temperature sensor according to claim 1 it is characterised in that described electric fuse array to include (n+1) individual
Electric fuse unit, wherein, n >=2 and n are integer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210552748.3A CN103063317B (en) | 2012-12-18 | 2012-12-18 | Built-in temperature sensor |
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| CN201210552748.3A CN103063317B (en) | 2012-12-18 | 2012-12-18 | Built-in temperature sensor |
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| CN103063317A CN103063317A (en) | 2013-04-24 |
| CN103063317B true CN103063317B (en) | 2017-03-01 |
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| CN201210552748.3A Active CN103063317B (en) | 2012-12-18 | 2012-12-18 | Built-in temperature sensor |
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| CN104422536B (en) * | 2013-09-02 | 2017-12-19 | 钜泉光电科技(上海)股份有限公司 | Using the temperature sensors of high precision of wave chopping technology |
| CN105606239A (en) * | 2014-10-29 | 2016-05-25 | 上海贝岭股份有限公司 | Temperature measurement circuit |
| JP6436728B2 (en) * | 2014-11-11 | 2018-12-12 | エイブリック株式会社 | Temperature detection circuit and semiconductor device |
| CN105807827B (en) * | 2014-12-02 | 2017-08-11 | 奕力科技股份有限公司 | Band-gap voltage reference circuit with stable chopping |
| CN105987762B (en) * | 2015-03-05 | 2018-09-28 | 上海炬力集成电路设计有限公司 | A kind of method of built-in temperature sensor and temperature |
| CN106289555B (en) * | 2016-07-22 | 2018-09-18 | 京东方科技集团股份有限公司 | Display base plate |
| JP6490039B2 (en) * | 2016-10-21 | 2019-03-27 | ミネベアミツミ株式会社 | Strain gauge |
| US11493389B2 (en) * | 2018-09-28 | 2022-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low temperature error thermal sensor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1113563A (en) * | 1993-07-16 | 1995-12-20 | 麦克斯·弗赖特海因 | superheated steam generator and control system and method |
| CN1865864A (en) * | 2005-05-20 | 2006-11-22 | 上海飞恩微电子有限公司 | Multifunctional sensor integrated chip for tyre pressure and temperature monitoring system |
| CN101105413A (en) * | 2007-08-08 | 2008-01-16 | 中国航天时代电子公司第七七一研究所 | Temperature observation circuit |
| CN101241378A (en) * | 2007-02-07 | 2008-08-13 | 中国科学院半导体研究所 | Output adjustable bandgap reference source circuit |
| CN102494791A (en) * | 2011-12-30 | 2012-06-13 | 上海集成电路研发中心有限公司 | On-chip temperature sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005147816A (en) * | 2003-11-14 | 2005-06-09 | Mitsubishi Electric Corp | Temperature measuring apparatus |
-
2012
- 2012-12-18 CN CN201210552748.3A patent/CN103063317B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1113563A (en) * | 1993-07-16 | 1995-12-20 | 麦克斯·弗赖特海因 | superheated steam generator and control system and method |
| CN1865864A (en) * | 2005-05-20 | 2006-11-22 | 上海飞恩微电子有限公司 | Multifunctional sensor integrated chip for tyre pressure and temperature monitoring system |
| CN101241378A (en) * | 2007-02-07 | 2008-08-13 | 中国科学院半导体研究所 | Output adjustable bandgap reference source circuit |
| CN101105413A (en) * | 2007-08-08 | 2008-01-16 | 中国航天时代电子公司第七七一研究所 | Temperature observation circuit |
| CN102494791A (en) * | 2011-12-30 | 2012-06-13 | 上海集成电路研发中心有限公司 | On-chip temperature sensor |
Non-Patent Citations (3)
| Title |
|---|
| 基于CC2430片上温度传感器的温度监控系统;蒋凌云;《计算机技术与发展》;20120430;第22卷(第4期);全文 * |
| 新型低功耗CMOS片上温度传感器设计;林荣等;《传感技术学报》;20110731;第24卷(第7期);全文 * |
| 新型全CMOS片上温度传感器设计;林赛华;《半导体学报》;20060331;第27卷(第3期);全文 * |
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