CN100397569C - Substrate processing apparatus, control method of substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus according to the present invention comprises a plurality of processing chambers, discharge systems each provided in conjunction with one of the processing chambers and a common discharge system connected with the discharge systems of at least two processing chambers among the discharge systems provided in conjunction with the individual processing chambers. The common discharge allows a switch-over between a scrubbing common discharge system that discharges discharge gas from each processing chamber after scrubbing the discharge gas at a scrubbing means and a non-scrubbing common discharge system that directly discharges the discharge gas from the discharge system of the processing chamber without scrubbing at the scrubbing means. In this substrate processing apparatus, switch-over control is executed to select either the scrubbing common discharge system of the non-scrubbing common discharge system in correspondence to the type of processing executed in the processing chamber.

Description

Substrate processing apparatus, control method of substrate processing apparatus

technical field

The present invention relates to a substrate processing device equipped with a detoxification device for detoxifying exhaust gas discharged during substrate processing of semiconductor wafers or liquid crystal substrates, a control method and a program for the substrate processing device.

Background technique

As a substrate processing apparatus, there is a plasma processing apparatus that uses a predetermined gas to process a substrate in a processing chamber, such as a semiconductor wafer (hereinafter also simply referred to as a "wafer"), and performs film formation processing or etching processing or processing using a predetermined gas. Indoor cleaning, etc.

Since the exhaust gas discharged from the processing chamber of such a substrate processing apparatus may contain harmful gas or gas that is a burden on the environment, it is not appropriate to discharge it to the atmosphere as it is from the viewpoint of environmental protection. Therefore, the exhaust gas passes through a detoxification device that removes (detoxifies) the exhaust gas from the treatment chamber by heat treatment or the like.

As a substrate processing apparatus equipped with the above-mentioned detoxification device, for example, as shown in FIG. The exhaust systems 12A, 12B of the processing chambers 10A, 10B make the exhaust gases from the respective processing chambers 10A, 10B harmless. However, since the detoxification device as many as the number of treatment chambers are required, such a large installation area is required, and there is a problem that the manufacturing cost also increases.

In order to solve these problems, for example, there is also the following technique: as shown in FIG. The treatment chambers 10A, 10B are connected with a common detoxification device 30, so that one detoxification device 30 performs the treatment of removing the exhaust gas from each treatment chamber 10A, 10B. (For example, refer to Patent Documents 1 and 2).

[Patent Document 1]: Japanese Patent Laid-Open No. 11-8200

[Patent Document 2]: Japanese Patent Application Laid-Open No. 2004-95643

However, in the processing performed in each processing chamber, for example, prior to processing a wafer in the processing chamber, the evacuation process is performed under a high pressure state, such as a rough extraction and exhaust process in which the atmospheric pressure is roughly extracted to a predetermined pressure. In addition, since the processing gas has not yet been introduced into the processing chamber in this rough exhaust gas treatment, it is not necessary to perform detoxification of the exhaust gas.

But in the scheme shown in Fig. 24, Fig. 25, regardless of the processing type that is carried out in each processing chamber, the exhaust gas from each processing chamber is exhausted after all detoxification devices eliminate harmful effects, so as mentioned above, in Exhaust under high pressure state, and the rough exhaust exhaust treatment necessary for the detoxification of the exhaust is also exhausted after detoxification by the detoxification device. Therefore, there is a problem that the burden on the detoxification device increases and the life span also decreases.

In addition, in recent years, the size of substrates to be processed such as wafers and liquid crystal panels has been significantly increased. At the same time, the size of the processing chamber has also increased, and the amount of exhaust gas from the processing chamber has also increased significantly. Therefore, from such an exhaust amount From the point of view, the burden on the detoxification device also increases.

Moreover, since the detoxification device detoxifies the exhaust gas by heat treatment, for example, the more the detoxification device is, the greater the energy required for the exhaust gas treatment. Therefore, the energy efficiency of the factory in which the substrate processing apparatus is installed also falls, and the energy consumption of the whole factory also increases. It is desired to detoxify exhaust gas with as low energy as possible from both the viewpoint of energy efficiency of the entire plant and the viewpoint of cost.

From this point of view, it is preferable that the number of detoxification devices is few, so as shown in Figure 25, a common detoxification device is set in each treatment chamber than shown in Figure 24 in each treatment chamber respectively. good. However, as shown in Figure 25, since the exhaust from each treatment chamber is concentrated to a common detoxification device, if, for example, each treatment chamber is used to process in parallel, the burden on the detoxification device will vary depending on the type of treatment. increase.

Contents of the invention

Therefore, the present invention is made in view of the above-mentioned problems, and its purpose is to provide a substrate processing device, a control method and a program of the substrate processing device, which can reduce the burden on the detoxification components for exhaust detoxification, and realize the required detoxification of exhaust detoxification. Energy or cost reduction.

In order to solve the above-mentioned problems, according to the viewpoint of the present invention, there is provided a substrate processing apparatus characterized by comprising: a plurality of processing chambers for introducing gas and performing predetermined processing; exhaust systems respectively provided in the respective processing chambers; A common exhaust system that connects the exhaust systems of at least two or more treatment chambers in the exhaust systems of the above-mentioned treatment chambers, wherein the above-mentioned common exhaust system is configured as a switchable common exhaust system for eliminating harmful effects and a common exhaust system for non-harm eliminating The common exhaust system for detoxification removes and discharges the exhaust from the exhaust systems of the above-mentioned treatment chambers through the detoxification components, and the non-detoxification common exhaust system discharges the exhaust from the above-mentioned treatment chambers without passing through the detoxification components The exhaust system of the exhaust system also has a control unit for switching control between the common exhaust system for eliminating harmful effects and the common exhaust system for eliminating harmful effects according to the type of treatment performed by each of the above-mentioned treatment chambers.

In order to solve the above-mentioned problems, according to another aspect of the present invention, there is provided a method of controlling a substrate processing apparatus, comprising: a plurality of processing chambers for introducing gas and performing predetermined processing; and an exhaust system respectively provided in each of the processing chambers. and the common exhaust system connecting the exhaust systems of at least two or more treatment chambers in the exhaust systems of the above-mentioned treatment chambers. The common exhaust system for detoxification removes and discharges the exhaust from the exhaust systems of the above-mentioned treatment chambers through the detoxification components, and the non-detoxification common exhaust system discharges the exhaust from the above-mentioned treatment chambers without passing through the detoxification components Exhaust of the exhaust system of the above-mentioned detoxifying common exhaust system and the above-mentioned non-destroying common exhaust system are switched and controlled according to the type of treatment carried out by each of the above-mentioned processing chambers.

According to the device or control method of the present invention, since the switching control of the common exhaust system for eliminating harmful effects and the common exhaust system for eliminating harmful effects can be carried out according to the types of treatments performed in each of the above-mentioned processing chambers, for example, the exhaust gas can be exhausted under high pressure conditions. Exhaust gas, rough extraction exhaust treatment that does not need to eliminate the harmful effects of the exhaust, etc. can be eliminated through the non-harmful common exhaust system without passing through the harmful components. As a result, since the burden on the detoxification components for detoxification of the exhaust gas can be reduced, the energy and cost required for detoxification of the exhaust gas can be reduced.

In addition, in the above device or control method, when the processing is performed in parallel by the plurality of processing chambers connected to the common exhaust system, when the processing is performed in parallel by the plurality of processing chambers connected to the common exhaust system, The above-mentioned control unit performs a prescribed exclusive control, so that the first processing consisting of switching the above-mentioned common exhaust system to the above-mentioned non-detoxification common exhaust system (for example, starting from the atmospheric pressure state where no detoxification is necessary in the exhaust) is performed. One of the second treatment (for example, the processing of the processed substrate that needs to be eliminated in the exhaust) consisting of switching the above-mentioned common exhaust system to the above-mentioned common exhaust system for detoxification Processing While a process is being performed in one of the plurality of process chambers, another process is not being performed in the other process chambers of the plurality of process chambers. Thus, it is possible to prevent the first treatment and the second treatment from being performed simultaneously in different treatment chambers. Therefore, while reducing the burden on the detoxification component, it is possible to reliably prevent exhaust gas that must be detoxified from being discharged without detoxification.

In addition, in the above-mentioned apparatus or control method, there is provided a use right reservation information storage unit for storing reservation information of the use right of the common exhaust system in each of the processing chambers, and the exclusive control in each of the processing chambers is connected to the common exhaust system. When one of the above-mentioned multiple processing chambers on the gas system performs one of the above-mentioned first processing and the above-mentioned second processing, it is judged whether one processing is performed in the above-mentioned multiple processing chambers connected to the above-mentioned common exhaust system If it is judged that the other processing chamber does not perform the above-mentioned one processing, another processing can be performed, and if it is judged that the other processing chamber is performing the above-mentioned one processing, the other processing can be regarded as a waiting processing state , and store the right-to-use reservation information of the common exhaust system in the right-to-use reservation information storage unit, and then perform another process of reservation processing based on the reservation information of the right-to-use reservation information storage unit. In this case, the reservation process is, for example, a process of performing the other process in the processing chamber in the processing waiting state after the completion of one processing in the other processing chamber. By performing such reservation processing, it is possible to automatically perform processing in processing chambers that are waiting for processing.

In addition, when the reservation processing stores the reservation information of the right to use the common exhaust system for a plurality of processing chambers in the right-to-use reservation information storage means, the other method described above may be performed in accordance with the order in which the reservation information is stored. deal with. Therefore, even if a plurality of processing chambers are reserved, processing can be performed sequentially.

In addition, in the above-mentioned device or control method, the above-mentioned first treatment is, for example, a treatment that at least includes an exhaust treatment that does not need to be exhausted and the treatment chamber is above a predetermined pressure, and the above-mentioned second treatment is, for example, at least a treatment that includes Accompanied by the need for exhaust gas treatment for detoxification and exhaust gas treatment. Thereby, the exhaust gas under the high pressure can be prevented from being discharged through the detoxification component, and at the same time, the exhaust gas that must be detoxified can be prevented from being discharged without passing through the detoxification component. Therefore, the burden on the detoxification unit can be reduced.

In addition, in the above-mentioned device or control method, the above-mentioned first treatment may be, for example, rough extraction and exhaust treatment of the above-mentioned processing chamber or processing including the above-mentioned rough extraction and exhaust treatment (for example, automatic inspection of the processing chamber including rough extraction and exhaust treatment) treatment or maintenance treatment). In addition, the second processing is, for example, processing gas introduction processing accompanied by evacuation of the processing chamber or processing including the processing gas introduction processing (for example, automatic inspection processing or maintenance processing including processing gas introduction processing). Since such automatic inspection processing or maintenance processing sometimes also includes rough extraction and exhaust processing or processing gas introduction processing, in this case, by performing exclusive control of the first processing and the second processing, it is possible to reduce damage to the detoxification components. At the same time as the burden, it is sure to prevent the exhaust that must be eliminated without eliminating the harmfulness.

In the above-mentioned device or control method, both the first treatment and the second treatment may be a rough extraction and exhaust treatment of the treatment chamber or a treatment including the rough extraction and exhaust treatment. Since it is possible to prevent different processing chambers from simultaneously carrying out, for example, rough extraction and exhaust treatment, etc., it is possible to prevent the exhaust gas in the rough extraction and exhaust treatment that must be eliminated from being discharged without detoxification, and in addition, it is possible to reliably prevent the exhaust gas that is based on the rough extraction and exhaust treatment. The reverse flow of the exhaust gas is caused by the pressure difference in the processing chambers with different start timings.

In the above-mentioned device or control method, a gas introduction system for introducing gas into the above-mentioned processing chamber may be formed by a processing gas introduction system for introducing a processing gas and an inert gas introduction system for introducing an inert gas, and the above-mentioned inert gas introduction system has a first introduction system for the above-mentioned inert gas; and a second introduction system for introducing the above-mentioned inert gas at a flow rate greater than that of the first introduction system. Therefore, since the flow rate is low in the process of using the first introduction system to introduce inert gas, for example, the common exhaust system for removing harmful substances is exhausted through the harmful components, and in the process of using the second introduction system to introduce inert gas Because of the large flow rate, it can be exhausted by the non-harm-eliminating common exhaust system without passing through the harm-removing components. Thereby, the burden on the detoxification parts can be reduced.

In the above device or control method, at least the inert gas may be introduced through the second introduction system when the particle reduction treatment in the treatment chamber is performed. In the particle reduction treatment, since it sometimes includes, for example, exhausting in a high-pressure state, it is not necessary to carry out the rough extraction and exhausting treatment of the detoxification of the exhaust gas, so in such a treatment, it is possible to pass through the non-detoxification unit instead of the detoxification unit. Harmful common exhaust system exhaust. In this way, the burden on the detoxification components for exhaust detoxification can be reduced, and the energy or cost required for detoxification of exhaust gas can be reduced. In addition, regardless of whether the inert gas is introduced continuously or temporarily during the particle reduction process, a large flow of inert gas can be introduced through the second introduction system, and the processing chamber can be cleaned by gas shock waves generated under predetermined conditions. .

In this case, first, the inert gas may be introduced only for a predetermined time through at least the second introduction system, and thereafter, the inert gas may be supplied only through the first introduction system. Even if a large flow rate of inert gas is temporarily introduced into the processing chamber for a predetermined time, the gas shock wave is generated under predetermined conditions, so the processing chamber can be cleaned by the gas shock wave. In addition, even if the exhaust is exhausted through the detoxification components through the detoxification common exhaust system, the time for discharging the inert gas at a large flow rate is short, so the burden on the detoxification device can be reduced.

In order to solve the above-mentioned problems, according to another aspect of the present invention, a program for controlling a substrate processing apparatus includes: a plurality of processing chambers for introducing gas and performing predetermined processing; The exhaust system in; and the common exhaust system connecting the exhaust systems of at least two or more treatment chambers in the exhaust systems of the above-mentioned treatment chambers, wherein the above-mentioned common exhaust system is constituted as a switchable common exhaust system for detoxification The common exhaust system of the system and the non-detoxification system, the detoxification common exhaust system uses the detoxification components to eliminate and discharge the exhaust from the exhaust systems of the above-mentioned treatment chambers, and the non-detoxification common exhaust system does not pass through the detoxification The component exhausts the exhaust from the exhaust system of each of the above-mentioned treatment chambers. This program can be used in the computer to carry out the above-mentioned common exhaust system for eliminating harmful effects and the above-mentioned common exhaust for eliminating harmful Gas system switching control. By running this program, the burden on the detoxification device can be reduced.

Furthermore, in the above procedure, it is used to perform prescribed exclusive control such that the common exhaust system is switched to the non- One of the first processing consisting of processing after the common exhaust system for eliminating harm and the second processing consisting of performing processing after switching the common exhaust system to the common exhaust system for eliminating harm is in the While one treatment chamber of the plurality of treatment chambers is performing a treatment, the other treatment chambers of the plurality of treatment chambers are not performing another treatment. By running this program, it is possible to prevent the first treatment and the second treatment from being performed simultaneously in different treatment chambers, so that while reducing the burden on the detoxification components, it is possible to surely prevent the exhaust gas that must be detoxified from being discharged without detoxification. .

According to the present invention, the burden of the detoxification components for exhaust detoxification can be reduced, and the energy or cost required for exhaust detoxification can be reduced. In addition, when processing is performed in parallel in a plurality of processing chambers, it is possible to reduce the burden on the detoxification components while preventing the non-detoxification common exhaust system and the detoxification common exhaust system from being switched midway. It is sure to prevent the exhaust gas that must be eliminated without eliminating the harmfulness.

Description of drawings

FIG. 1 is a cross-sectional view showing the configuration of a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a block diagram showing an example of a piping configuration of each processing chamber of the substrate processing apparatus shown in FIG. 1 and a configuration example of a detoxification device.

Fig. 3 is a schematic diagram illustrating the flow of exhaust when only one treatment chamber uses a detoxification device and exhausts through a non-detoxification common exhaust system.

Fig. 4 is a schematic diagram illustrating the flow of exhaust gas when only one treatment chamber uses the detoxification device and exhausts through the detoxification common exhaust system.

Fig. 5 is a schematic diagram illustrating the flow of exhaust gas when two processing chambers perform processing in parallel.

FIG. 6 is a schematic diagram illustrating the flow of exhaust gas when two processing chambers perform processing in parallel.

FIG. 7 is a schematic diagram illustrating the flow of exhaust gas when two processing chambers perform processing in parallel.

Fig. 8 is a schematic diagram illustrating the flow of exhaust gas when two processing chambers perform processing in parallel.

FIG. 9 is a block diagram showing a configuration example of a control unit in the same embodiment.

FIG. 10 is a schematic diagram showing a specific example of a data table of processing status management information in the same embodiment.

Fig. 11 is a schematic diagram showing a specific example of the data table of the reservation information of the right to use the detoxification device in the same embodiment.

FIG. 12 is a flowchart showing a specific example of control when the first process is performed in the same embodiment.

Fig. 13 is a flowchart showing a specific example of control when the second process is performed in the same embodiment.

Fig. 14 is a block diagram showing a specific configuration example of the gas introduction system shown in Fig. 2 .

FIG. 15 is a schematic diagram illustrating the flow of exhaust gas during wafer processing in the processing chamber constituted by the piping shown in FIG. 14 .

FIG. 16 is a schematic diagram illustrating the flow of exhaust gas during particle reduction processing in the processing chamber having the piping configuration shown in FIG. 14 .

Fig. 17 is a block diagram showing another specific configuration example of the gas introducing system shown in Fig. 2 .

FIG. 18 is a flow chart illustrating a specific example of control when particle reduction processing is performed in the processing chamber having the piping configuration shown in FIG. 17 .

Fig. 19 is a flowchart showing a specific example of the first NPPC shown in Fig. 17 .

Fig. 20 is a flowchart showing a specific example of the second NPPC shown in Fig. 17 .

FIG. 21 is a schematic diagram illustrating the flow of exhaust gas when the first NPPC is performed in the processing chamber constituted by the piping shown in FIG. 17 .

FIG. 22 is a schematic diagram illustrating the flow of exhaust gas when the second NPPC is performed in the processing chamber constituted by the piping shown in FIG. 17 .

FIG. 23 is a schematic diagram illustrating the flow of exhaust gas when the second NPPC is performed in the processing chamber constituted by the piping shown in FIG. 17 .

Fig. 24 is a block diagram showing a conventional example of a substrate processing apparatus including a detoxification device.

Fig. 25 is a block diagram showing another conventional example of a substrate processing apparatus including a detoxification device.

Symbol Description

100 substrate processing device

110 processing units

120 handling units

130 Moving room

131 (131A～131C) box table

132 (132A～132C) box container

136 Orienter

150 common handling room

160M, 160N load lock chamber

170 Handling unit side handling mechanism

180 Handling unit side transport mechanism

200 (200A～200D) processing room

210 (210A～210D) gas introduction system

212 (212A～212D) gas supply source

214 (214A～214D) Gas inlet valve

220 (220A～220D) exhaust system

230 (230A～230D) main exhaust system

240 (240A～240D) auxiliary exhaust system

250 (250A～250D) auxiliary pump

260 (260A～260D) main pump

270 (270A～270D) switching valve

280 (280A～280D) pressure sensor

300 pest control device

310 common exhaust system

320 common exhaust system

330 Non-Hazardizing Common Exhaust System

340 pest control parts

350 switching valve

400 Control Department

410 CPU

420 ROM

430 RAM

440 Timing Parts

450 display parts

460 input and output components

470 Report Part

480 various controllers

490 storage parts

492 Process status management information

494 Reservation information for the right to use pest control devices

510 Process gas introduction system

512 process gas supply source

514 Gas inlet valve

520 Inert gas introduction system

522 Inert gas supply source

530 Low Flow Induction System

532 throttle valve

534 Gas inlet valve

540 large flow import system

542 Gas inlet valve

602 main valve

604 connecting pipe

606 Connection valve

610 Process gas introduction system

612 Process gas supply source

614 Upstream side gas introduction valve

615 flow regulator

616 Downstream side gas introduction valve

620 Inert gas introduction system

622 Inert gas supply source

624 Upstream side gas introduction valve

630 Low Flow Induction System

632 throttle valve

636 Downstream side gas introduction valve

640 large flow import system

646 Downstream side gas introduction valve

W chip

Detailed ways

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, in this specification and the drawings, the same reference numerals are attached to components having substantially the same functional configuration, and repeated descriptions are omitted.

(Example of configuration of substrate processing equipment)

First, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus 100 includes a processing unit 110 for performing various processes such as film formation processing and etching processing on a substrate to be processed, such as a semiconductor wafer (hereinafter also simply referred to as "wafer") W; The wafer W is loaded and unloaded.

First, a configuration example of the transport unit 120 will be described. As shown in FIG. 1 , the transfer unit 120 has a transfer chamber 130 for loading and unloading wafers between a substrate storage container, for example, a cassette container 132 ( 132A to 132C) to be described later, and the processing unit 110 . The transfer chamber 130 is formed as a box-shaped body with a substantially polygonal cross section. In the transfer chamber 130 , one of the long sides with a substantially polygonal cross section is configured, and a plurality of cassette tables 131 ( 131A to 131C) are installed. Cassette containers 132A to 132C, which are examples of substrate storage containers, can be mounted on these cassette stages 131A to 131C, respectively.

Each cassette container 132 ( 132A to 132C ) can store, for example, a maximum of 25 wafers W in multiple stages at equal intervals, and has a sealed structure filled with, for example, N ₂ gas atmosphere inside. In addition, the transfer chamber 130 is configured such that wafers W can be loaded and unloaded into and out of the transfer chamber 130 through gate valves. In addition, the numbers of the cassette stations 131 and the cassette containers 132 are not limited to those shown in FIG. 1 .

At the end of the transfer chamber 130, a positioner (pre-alignment stage: pre-alignment stage) 136 as a positioning device is provided. The positioner 136 detects, for example, a positioning plane or a notch of the wafer W for alignment.

In the transfer chamber 130, a transfer unit side transfer mechanism (transfer chamber transfer mechanism) 170 is provided, for example, a linear drive mechanism transfers the wafer W in the longitudinal direction (direction of the arrow shown in FIG. 1). The transport mechanism 170 on the transport unit side is driven based on a control signal from the control unit 400 . In addition, the transport mechanism 170 on the transport unit side may be a dual-arm mechanism having two pickers (picks) as shown in FIG. 1 , or a single-arm mechanism having only one pick.

Next, a configuration example of the processing unit 110 will be described. For example, in the case of a cluster tool type substrate processing apparatus, as shown in FIG. For example, a plurality of processing chambers 200 (first to fourth processing chambers 200A to 200D) and load lock chambers 160M and 160N for predetermined processing such as film formation processing (for example, plasma CVD processing) or etching processing (for example, plasma etching processing). .

Each of the processing chambers 200A to 200D is connected to gas introduction systems 210A to 210D (omitted in FIG. Exhaust systems 220A to 220D in the processing chambers 200A to 200D. In addition, the configurations of these gas introduction systems and exhaust systems are described below, for example.

In addition, the inside of each processing chamber 200A-200D is comprised as follows, for example. That is, the upper electrode and the lower electrode are arranged to face each other in each of the processing chambers 200A to 200D. The above gas introduction system is connected to the upper electrode. The lower electrode also serves as a stage on which wafer W is loaded. A high-frequency power supply for applying predetermined high-frequency power is connected to the upper electrode and the lower electrode, respectively.

In each of these processing chambers 200A to 200D, for example, when a wafer W is carried in and placed on the lower electrode, it is brought into a predetermined vacuum pressure state by the exhaust process of the exhaust system. In addition, high-frequency power is applied to the upper electrode and the lower electrode, and at the same time, the processing gas from the gas introduction system is uniformly introduced to the wafer W through the upper electrode. Thereby, the processing gas introduced from the upper electrode is converted into plasma, and the surface of the wafer W is subjected to, for example, etching processing.

The processing of the wafer W in each of the processing chambers 200A to 200D is performed based on, for example, wafer processing information such as processing and recipes indicating processing steps and the like stored in advance in the storage means of the control unit 400 . The wafer processing information differs depending on the processing type and conditions of the wafer. In addition, the number of processing chambers 200 is not limited to that shown in FIG. 1 .

The common transfer chamber 150 has a function of loading and unloading wafers W between the processing chambers 200A to 200D, or between the processing chambers 200A to 200D and the first and second load lock chambers 160M and 160N. The common transfer chamber 150 is formed in a polygonal shape (for example, hexagonal), and the above-mentioned processing chambers 200 (200A to 200D) are connected to each other through gate valves around it, and at the same time, gate valves (vacuum side gate valves) are respectively connected to each other. The front ends of the first and second load lock chambers 160M and 160N are connected. Base ends of the first and second load lock chambers 160M and 160N are respectively connected to the other side of the transfer chamber 130 via a gate valve (atmosphere side gate valve).

The first and second load lock chambers 160M and 160N have a function of skipping to the next stage after temporarily holding and adjusting the pressure of the wafer W. Inside each of the first and second load-lock chambers 160M and 160N, transfer tables on which wafers W can be loaded are respectively provided.

In such a processing unit 110, as described above, between the common transfer chamber 150 and each of the processing chambers 200A to 200D, and between the common transfer chamber 150 and the above-mentioned load lock chambers 160M and 160N are configured to be airtight. They are opened and closed and bundled, and can communicate with the inside of the common transport room 150 if necessary. In addition, each of the first and second load lock chambers 160M, 160N and the transfer chamber 130 is also configured to be airtightly openable and closable.

In the common transport chamber 150, for example, a processing unit-side transport mechanism (transport mechanism in the common transport chamber) 180 constituted by a multi-joint arm capable of flexion, extension, elevation, and rotation is provided. The processing unit side transfer mechanism transfers the wafer W between the load lock chambers 160M and 160N and the processing chambers 200A to 200D. The processing unit side transport mechanism 180 is driven based on a control signal from the control unit 400 . In addition, the transport mechanism 180 on the processing unit side may be a dual-arm mechanism with two pickers as shown in FIG. 1 , or a single-arm mechanism with only one picker.

In the substrate processing apparatus 100, a control unit 400 is provided to control the overall operation of the substrate processing apparatus including the control of the above-mentioned conveying unit side conveying mechanism 170, processing unit side 180, gate valves, positioner 136, and the like. The configuration of such a control unit 400 will be described later, for example.

In addition, in the substrate processing apparatus 100, a common detoxification device 300 for detoxifying (detoxifying) the exhaust gas of each of the processing chambers 200A to 200D is arranged. The detoxification device 300 is connected to a common exhaust system 310 that connects the exhaust systems 200A to 200D in the processing chambers 200A to 200D. The common exhaust system 310 is connected to, for example, an exhaust system of a factory where the substrate processing apparatus 100 is installed via the detoxification device 300 .

When the substrate processing apparatus 100 configured in this way operates, processing of the wafer W starts. For example, the wafer W is unloaded from one of the cassette containers 132A to 132C by the transport unit side transport mechanism 170 and transported to the positioner 136 . In addition, the wafer W positioned by the positioner 136 is carried out from the positioner 136 and carried into the load lock chamber 160M or 160N. At this time, if the processed wafer W for which all required processes are completed is located in the load lock chamber 160M or 160N, the unprocessed wafer W is carried in after the processed wafer W is carried out.

The processing unit side transfer mechanism 180 transfers the wafer W carried into the load lock chamber 160M or 160N out of the load lock chamber 160M or 160N, and carries it into the processing chamber 200 where the wafer W is processed, and performs predetermined processing. In addition, the processed wafer W that has been processed in the processing chamber 200 is carried out of the processing chamber 200 by the processing unit side transfer mechanism 180 . At this time, when the wafer W needs to be processed in a plurality of processing chambers 200 consecutively, the wafer W is carried into another processing chamber 200 where the next processing is performed, and the processing in the processing chamber 200 is performed.

In addition, the process-completed wafers that have completed all necessary processing are returned to the load lock chamber 160M or 160N. The processed wafer W returned to the load lock chamber 160M or 160N is returned to the original cassette containers 132A to 132C by the transport unit side transport mechanism 170 .

In this way, during the operation of the substrate processing apparatus 100 , the exhaust gas discharged from the exhaust systems 220A- 200D of the treatment chambers 200A- 200D is discharged from the common exhaust system 310 through the detoxification device 300 to, for example, the factory exhaust system.

Here, an example of the piping configuration of each of the processing chambers 200A to 200D and a configuration example of the detoxification device 300 will be described with reference to the drawings. FIG. 2 is a block diagram showing a piping configuration example of each of the processing chambers 200A to 200D and a configuration example of the detoxification device 300 . Since the piping configuration examples of each of the processing chambers 200A to 200D are the same, A to D will be omitted from the symbols representing the constituent elements of each of the processing chambers 200A to 200D below for a representative description. Therefore, for example, the case of the processing chamber 200 represents each of the processing chambers 200A to 200D.

(Example of piping configuration of processing chamber)

First, the piping configuration (gas introduction system and exhaust system) of the processing chamber 200 will be described. As shown in FIG. 2 , in the processing chamber 200, a pressure sensor 280 for detecting the pressure in the processing chamber 200, a gas introduction system 210 capable of introducing a predetermined gas such as a processing gas or a passivation gas into the processing chamber 200, and Exhaust system 220 in exhaust processing chamber 200 .

The gas introduction system 210 is configured by connecting a gas supply source 212 to the processing chamber 200 via a gas introduction valve (gas introduction valve) 214 , for example. As _the gas introduced into the processing chamber 200 from _the gas supply source 212, for example, PFC gas (CF _{4 ,} C ₂ F _{6 ,} etc.) In addition to processing gases such as NO _x , hydrogen halides, and heavy metal alkoxide complexes that must be exhausted, there are also inert gases used for passivation gases and pressure adjustment gases. In this specification, an inert gas refers to a gas that is difficult to undergo chemical changes widely, and includes, for example, not only rare gas group elements such as Ar gas and He gas, but also N ₂ gas and the like. In addition, the gas introduction system 210 is not limited to the configuration shown in FIG. 2 . For example, a flow control member such as a mass flow controller or a backflow prevention valve may be provided on the downstream side of the gas introduction valve.

The exhaust system 220 is configured by, for example, connecting a main exhaust system 230 and an auxiliary exhaust system 240 to the processing chamber 200 in parallel. The main exhaust system 230 and the auxiliary exhaust system 240 are connected to the auxiliary pump 250 after converging on the exhaust side. The main pump 260 is connected to the main exhaust system 230, and the switching valve (switching valve, auxiliary valve) for switching the exhaust from the main exhaust system 230 and the exhaust from the auxiliary exhaust system 240 is connected to the auxiliary exhaust system 240. 270. In addition, the main pump 260 of the main exhaust system 230 is connected to the processing chamber 200 via a pressure regulating valve (APC) not shown.

The auxiliary pump 250 is constituted by, for example, a dry pump, and the auxiliary pump 250 performs a rough pumping and exhausting process for evacuating the inside of the processing chamber 200 to a constant vacuum state. The main pump 260 is constituted by, for example, a turbo pump or the like, and the main pump 260 performs a main pumping and exhausting process for further evacuating the inside of the processing chamber 200 to a desired high vacuum pressure. The exhaust side of the auxiliary pump 250 of the exhaust system 220 is connected to the detoxification device 300 through a common exhaust system 310 . In addition, the exhaust system 200 is not limited to the configuration shown in FIG. 2 as long as the exhaust system 200 has a configuration capable of performing at least a rough exhaust gas treatment.

The above-mentioned pressure sensor 280 is constituted by, for example, a diaphragm vacuum gauge (capacitance manometer). The output from the pressure sensor 280 is supplied to the control unit 400 of the substrate processing apparatus 100 . In addition, the gas introduction valve 214 of the gas introduction system 210 and the switching valve 270 of the exhaust system 220 are respectively controlled by the control signal of the control unit 400 .

(Operation example of gas introduction system and exhaust system)

When the wafer W is processed in the processing chamber 200 configured in this way, first, with the gate valve of the processing chamber 200 closed, vacuuming is performed to depressurize the inside of the processing chamber 200 to a predetermined pressure. The evacuation process is performed, for example, by a rough exhaust process for reducing the pressure to a predetermined pressure, and a main exhaust process for further reducing the pressure from the predetermined pressure to a high vacuum set pressure.

Specifically, first, by opening the switching valve 270, the exhaust system 220 is changed to the auxiliary exhaust system 240, and the auxiliary pump 250 is driven to perform a rough extraction exhaust process. In addition, if a predetermined pressure is detected by the pressure sensor 280, the exhaust system 220 is changed into the main exhaust system 230 by closing the switching valve 270, and the main pump 260 is driven to carry out the main extraction and exhaust process until the pressure sensor 280 detects the set pressure. Set the pressure.

In addition, when the main extraction and exhaust process is completed, the gate valve is opened, and the wafer W is carried into the process chamber 200 . When the wafer W is loaded on the loading table, the gate valve is closed, and the process proceeds to the wafer W processing step. At this time, in the state where the switching valve 270 is closed and the exhaust system 220 becomes the main exhaust system 230, the gas introduction valve 214 is opened to introduce the processing gas from the gas supply source 212 into the processing chamber 200, thereby starting Processing of wafer W. That is, the wafer W is processed for a predetermined time while maintaining the pressure in the processing chamber 200 at a predetermined pressure based on, for example, the pressure from the pressure sensor 280 .

When the processing of the wafer W is completed, the gas introduction valve 214 is closed, the main exhaust system 230 is used to exhaust the inside of the processing chamber 200 , and the processed wafer W is carried out of the processing chamber 200 . In this way, the processing of one wafer W is completed. Thereafter, the next wafer W is carried into the processing chamber 200, and the wafer W is sequentially processed in the same steps as above. When such wafer W is processed, the exhaust gas exhausted from the exhaust system 220 of the processing chamber 200 is exhausted from the common exhaust system 310 through the detoxification device 300 to, for example, an exhaust system of a factory.

(Example of the structure of the detoxification device)

Next, a configuration example of the detoxification device will be described. The detoxification device 300 is connected to a common exhaust system 310 . Specifically, the common exhaust system 310 is, for example, branched into a common exhaust system 320 that detoxifies (eliminates) the exhaust from the treatment chamber 200 in the detoxification device 300 and exhausts it, and does not detoxify the exhaust from the treatment chamber 200. A non-detoxification common exhaust system 330 for detoxifying (detoxifying) the exhaust of the chamber 200 .

On the common exhaust system 320 of detoxification, connect the harm-removing component 340 that makes the exhaust from common exhaust system 310 harmless (remove harm), and connect and switch on the common exhaust system 330 of detoxification from detoxification. The switching valve (switching valve) 350 of the exhaust of the gas system 320 and the exhaust from the common exhaust system 330 of non-harm removal. The exhaust side of the common exhaust system 320 for eliminating harmful effects and the common exhaust system 330 for eliminating harmful effects is connected to the exhaust system of the factory, for example, after merging.

In addition, the above-mentioned detoxification component 340 is composed of, for example, a detoxification reaction tank for detoxifying the exhaust gas passing through the detoxification common exhaust system 320 through heat treatment. In addition, as a detoxifying member, it is not limited to heat treatment, and various configurations can be applied. The switching valve 350 of the above-mentioned detoxification device is controlled by the control signal of the control unit 400 . The control unit 400 performs switching control of the switching valve 350 of the detoxification device 300 according to the type of treatment performed in the treatment chamber 200 .

(Example of operation of pest control device)

Below, with reference to accompanying drawing, illustrate the working example of the harmful device of above-mentioned structure. First, the case where only one treatment chamber is exhausted using the detoxification device 300 will be described. Here, the case where the detoxification device 300 is used as the processing chamber 200A representing the processing chambers 200A to 200D will be described. 3 and 4 are schematic diagrams illustrating the flow of exhaust gas (thick line arrows) when only the treatment chamber 200A is exhausted using the detoxification device 300 .

As mentioned above, the switching valve 350 of the detoxification device 300 is switched between the exhaust of the detoxification common exhaust system 320 and the exhaust of the non-detoxification common exhaust system 330 according to the type of treatment performed by the treatment chamber 200A. Therefore, for example, when carrying out the rough exhaust exhaust treatment in the above-mentioned treatment chamber 200A, as shown in FIG. This does not detoxify the exhaust as it is, and when performing other processing, for example, when the wafer W is processed after introducing the processing gas, as shown in FIG. Exhaust of air system 320, thus exhaust after detoxification.

Because when carrying out the processing of wafer W in this way, the processing gas has not been introduced in the rough extraction and exhaust processing usually, so the exhaust gas containing harmful components is not discharged from the processing chamber 200A, so even if it does not pass through the detoxifying part 340, it does not exist. question. However, if the rough extraction exhaust gas treatment from the atmospheric pressure is all exhausted through the detoxification component 340 of the detoxification device 300, then the burden of the detoxification device 300 will increase, so like this The treatment of the detoxification device can also be exhausted without the detoxification component 340, so the burden on the detoxification device 300 can be reduced, and the life-span of the detoxification device 300 can be extended. In addition, the efficiency of the detoxification treatment can be realized, so the energy required for the detoxification treatment can also be reduced, and even a small-capacity detoxification device can be fully applied as the detoxification device 300 common to each treatment chamber.

Therefore, as the processing in the processing chamber 200A, in addition to the above-mentioned normal processing of the wafer W, there are, for example, maintenance processing by the operator, or an automatic substrate processing device for the purpose of improving the work efficiency of regular maintenance and shortening the work time. 100 Automatic check processing (autocheck processing) of checking of each part. The automatic inspection process here includes automatic setup processing and self-inspection processing, and each inspection item also includes inspection of the gas introduction system 210A and the exhaust system 220A of the processing chamber 200A. Therefore, in such maintenance processing or automatic inspection processing, the above-mentioned rough extraction and exhaust processing of the processing chamber 200 may be performed.

In particular, in the case of automatic inspection processing of the processing chamber 200A, for example, the processing gas is introduced from the gas introduction system 210A, and the pressure is raised to a predetermined pressure while monitoring the pressure with the pressure sensor 280A, and the processing gas is introduced through this combination processing. After that, a rough exhaust gas treatment is performed. In this case, although the exhaust gas is roughly extracted, since the processed gas is discharged, if the processed gas contains harmful components, it must be exhausted after detoxification. In this way, exhaust gas containing harmful components is also discharged during the rough exhaust gas treatment in the processing chamber 200A.

At this time, if the switching valve 270A opened for switching to the auxiliary exhaust system 240A during the rough extraction exhaust process is linked, the switching valve 350 of the detoxification device 300 is automatically switched to the non-common exhaust system 330. However, there is concern that the exhaust gas containing harmful components will be discharged into the exhaust system of the factory without being detoxified.

Therefore, in the present invention, the switching valve 350 is controlled by the control unit 400 of the substrate processing apparatus 100 as follows without interlocking with the switching valve 270A. That is, the control unit 400 judges whether the processing performed by the processing chamber 200A is at least a processing performed from a high pressure state (for example, a predetermined pressure or higher) without detoxification that does not require exhaust. As shown in Fig. 3, by opening the switching valve 350 of the detoxification device 300, the common exhaust system 310 is changed into the common exhaust system 330 of non-detoxification, and the exhaust is not eliminated when it is judged that it is not from a high pressure state ( For example, under the situation of processing that is carried out above the specified pressure), as shown in Figure 4, by closing the switching valve 350 of the detoxification device 300, the common exhaust system 310 is changed into the common exhaust system 320 for detoxification, and the exhaust gas is exhausted after detoxification. gas.

At this time, whether it is processing from a high pressure state (for example, above a predetermined pressure), for example, when processing in the processing chamber 200A, the pressure in the processing chamber 200A is detected by the pressure sensor 280A, and the detected pressure is When the pressure is above the predetermined pressure (for example, 50 Torr [66.6hPa]), it is determined that the process starts from a high pressure state, and when it is lower than the predetermined pressure (for example, 50 Torr), it is determined that the process starts from a low pressure state.

According to such control, for example, the rough extraction and exhaust treatment in the processing chamber 200 from the atmospheric pressure state is a process that does not require detoxification and starts from a high pressure state, so for such a treatment, it is not detoxified through non-detoxification common exhaust. Air system 330 exhausts.

On the other hand, the exhaust treatment in the maintenance treatment or the automatic inspection process is performed under a low pressure state, so even if it is the same rough extraction exhaust treatment, such exhaust treatment is exhausted through the detoxification Exhaust after system 320 eliminates harmful effects. In addition, the processing of the wafer W accompanied by the introduction of the processing gas must be carried out in a low-pressure state to eliminate the harmful effects of the exhaust gas. .

Thereby, it is possible to reliably prevent exhaust gas containing harmful components from being discharged from the detoxification device 300 to the exhaust system of the factory. Moreover, in the rough extraction and exhaust treatment or the processing of the wafer W that is carried out from a low pressure state, even if the exhaust is exhausted through the detoxification unit 340, compared with the rough extraction and exhaust treatment that starts from a high pressure state, it can Reduce the burden imposed on the detoxification device 300 .

Next, an example of the operation of the detoxification device when a plurality of processing chambers perform processing in parallel will be described with reference to the drawings. Here, representative processing chambers 200A to 200D will be described in which processing is performed in parallel by the processing chambers 200A and 200B. 5 to 8 are schematic diagrams illustrating the flow of exhaust gas (thick line arrows) when processing is performed in parallel in the processing chambers 200A and 200B.

As mentioned above, in the present invention, when the treatment performed in the treatment chambers 200A and 200B is a treatment that does not require at least detoxification of exhaust gas and starts from a high pressure state (for example, above a predetermined pressure), the common The exhaust system 310 is switched to the non-harm elimination common exhaust system 330 , and in the case of other processing, the common exhaust system 310 is switched to the harm elimination common exhaust system 320 .

Therefore, when a plurality of processing chambers are processed in parallel, sometimes the first processing of switching the common exhaust system 310 to the non-harmful common exhaust system 330 is performed by different processing chambers at the same time using the processing timing of each processing chamber. and the second process performed after the common exhaust system 310 is switched to the common exhaust system 320 for detoxification. At this time, during the second treatment period in a certain treatment chamber, that is, during the period of exhausting by the common exhaust system 320 for detoxification, if other treatment chambers start the first treatment, they will switch to the exhaust system of the common exhaust system 330 for detoxification. gas. Among them, since a certain treatment chamber discharges the exhaust that must be treated for detoxification through the non-detoxification common exhaust system 330, there is a problem that it is discharged to the exhaust system of the factory without detoxification.

For example, as shown in FIG. 5 , in the processing chamber 200B, through the second processing, for example, the processing of the wafer W carried out while introducing the processing gas through the gas introduction system 210B, during the exhausting of the common exhaust system 320 for eliminating harmful effects, as shown in FIG. 6 Shown, if other treatment chamber 200A carries out the first treatment, for example, rough exhaust treatment from atmospheric pressure, then open the switching valve 350 of the detoxification device 300, and switch to the exhaust of the non-detoxification common exhaust system 330. Therefore, as shown in FIG. 6 , the exhaust gas discharged from the processing chamber 200A and required to be detoxified is exhausted to the exhaust system of the factory without being detoxified by the non-detoxification common exhaust system 330 .

On the contrary, as shown in FIG. 7, during the exhausting of the non-harmful common exhaust system 330 by the first treatment in the treatment chamber 200B, for example, the rough exhaust treatment from the atmospheric pressure, as shown in FIG. 8, in other treatment chambers 200A performs the second processing, for example, when processing the wafer W while introducing the processing gas through the gas introduction system 210B, the switching valve 350 of the detoxification device 300 is closed, and the exhaust of the detoxification common exhaust system 320 is switched. At this time, although there is no defect that the necessary detoxified exhaust from the treatment chamber 200A is not detoxified by the non-detoxification common exhaust system 330, it is exhausted to the exhaust system of the factory as it is. Before the exhaust at the beginning of the pressure state, the common exhaust system 320 for detoxification is exhausted through the detoxification component 340, so the burden on the detoxification device 300 increases.

Therefore, in the present invention, when a plurality of processing chambers perform processing in parallel, while one processing chamber is performing any one of the above-mentioned first processing and second processing, predetermined exclusive control is performed so that all other processing chambers Another process is not performed. Thereby, even under the situation that a plurality of treatment chambers are processed in parallel, it is also possible to prevent different treatment chambers from simultaneously performing the treatment that does not require exhaust and the treatment that requires exhaust and detoxification, so the burden on the detoxification device 300 can be reduced. , At the same time, it is sure to prevent the exhaust gas that must be detoxified from being exhausted into the factory's exhaust system without detoxification.

(Example of the configuration of the control unit that performs exclusive control)

Next, the control unit that performs the above-mentioned exclusive control will be described. Such exclusive control is performed, for example, by the control unit 400 that controls the substrate processing apparatus 100 . Therefore, a specific configuration example of the control unit 400 will be described below with reference to FIG. 9 .

As shown in FIG. 9, the control unit 400 includes a CPU (central processing unit) 410 constituting the main body of the control unit; Various inspection processing of the processing device, the use right processing of the harm removal device, program data such as particle reduction processing), etc.; RAM (random access memory) 430 is provided with a memory area for various data processing carried out by the CPU 410, etc.; by The timer unit 440 composed of a counter for measuring time, the display unit 450 composed of a liquid crystal display such as a display operation screen or a selection screen, etc.; the input and output unit 460 that can input various data etc. by the operator; Reporting means 470 constituted by an alarm, etc.; various controllers 480 for controlling each part of the substrate processing apparatus 100; and storage means 490 constituted by, for example, a memory.

The above-mentioned CPU 410 is electrically connected to ROM 420, RAM 430, timing unit 440, display unit 450, input and output unit 460, reporting unit 470, various controllers 480, and storage unit 490 through buses such as control bus, system bus, and data bus.

Among the various controllers 480, in addition to the controllers of the transport mechanisms 170, 180, and the positioner 136, controllers for controlling each part of the processing chambers 200A to 200D, and controllers for controlling the gas introduction system 210 described above are also included. Valve controllers such as the gas introduction valve 214, the switching valve 270 of the exhaust system 220, the switching valve 350 of the detoxification device, etc. In addition, the control of each part of each processing chamber 200A-200D may be controlled for every installation control part of each processing chamber 200A-200D. At this time, the control unit 400 is connected to the control units of the processing chambers 200A to 200D, and controls the substrate processing apparatus 100 while exchanging data and signals.

Store in storage unit 490: treatment situation management information 492, the treatment situation of whether each treatment chamber 200A～200D of this information storage carries out above-mentioned first treatment and second treatment; reservation information) 494, which stores reservation information for securing the right to use the harm removal device 300 by performing the above-mentioned first process and second process, and the like.

Here, a specific example of the processing status management information 492 described above will be described with reference to FIG. 10 . The processing status management information 492 is constituted by a data table including items such as a processing room, a first processing, and a second processing, as shown in FIG. 10 , for example. The item of each processing chamber indicates the type of each processing chamber 200A to 200D included in the substrate processing apparatus 100 . The items of the first process and the second process indicate whether each process chamber performs the first process or the second process.

In the items of the first process and the second process, for example, "1" is set (stored) when each process chamber 200A to 200D starts its process, and "0" is set (stored) when the process ends. Therefore, in the case of the first treatment (or the second treatment) is "0", it means that the treatment chamber is not performing the first treatment (or the second treatment), and it is "1" in the first treatment (or the second treatment) In the case of , it means that the processing chamber is performing the first processing (or the second processing).

For example, according to the example shown in FIG. 10, since the items of the first processing and the second processing of the processing chambers 200A, 200C, and 200D are all "0", it can be known that the processing chambers 200A, 200C, and 200D are not performing the first processing and the second processing. The status of the second treatment. On the contrary, since the first processing item of the processing chamber 200B is "1" and the second processing item is "0", it can be seen that the processing chamber 200B is not performing the second processing but processing the first processing.

According to such processing status management information 492, since the processing status of the first processing and the second processing of each processing chamber 200A to 200D can be known, when each processing chamber performs the first processing and the second processing, it can be managed according to the processing status. Information 492, it is easy to judge whether other processing chambers are performing the first processing and the second processing.

In addition, the processing status management information 492 does not need to _be stored in the data table _shown in FIG. For _A2 to F _D2 , "0" and "1" are set in these flags F _A1 to F _D1 and F _A2 to F _D2 in the same manner as above.

Next, a specific example of the pest removal device usage right reservation information 494 will be described with reference to FIG. 11 . The pest removal device usage right reservation information 494 is constituted by, for example, a data table having treatment rooms, treatment type items, and the like shown in FIG. 11 . The item of the processing chamber indicates the type of each processing chamber 200A to 200D included in the substrate processing apparatus 100 . The item of the type of processing indicates the processing (first processing or second processing) performed after the right to use the detoxification device is reserved.

If the first treatment or the second treatment of each treatment room 200A-200D is reserved for the reservation information 494 of the right to use the detoxification device, it will be sequentially stored in the data table of the reservation information 494 on the right to use the detoxification device. Therefore, each row of the data table of the detoxification device usage right reservation information 494 represents a reserved process (task).

Reservation information 494 for the right to use the detoxification device is to carry out one of the first treatment and the second treatment in another treatment room through the exclusive control of the first treatment or the second treatment above, and if the other treatment cannot be performed, When this other process is performed later, the right to use the detoxification device 300 (common exhaust system 310) is reserved.

The right to use the detoxification device 300 is obtained in the order in which the detoxification device usage right reservation information 494 is reserved. Therefore, when another process in another process room ends, processes (tasks) are performed in the order stored in the data table of the detoxification device usage right reservation information 494 . After that, in the order in which processing is performed, the order of reservations goes up.

For example, according to the example shown in FIG. 11, since the first process of the process chamber 200A is reserved first, this process is performed first. Thereafter, when the first reserved processing is performed, the order of the first processing of the second reserved 200C rises and becomes the first.

In addition, for example, the reservation of the harmful device usage right reservation information 494 can be canceled by the operator operating the input/output unit 460 of the control unit 400 . In addition, when the processing of the processing room waiting for processing by reservation is interrupted, the reservation of the harmful device usage right reservation information 494 is also cancelled. If the reservation is canceled in this way, the order of the remaining reservations goes up one by one.

Such processing can also be performed by changing the data table of the detoxification device usage right reservation information 494 into, for example, a data structure of a queue table for first-in, first-out (FIFO: first-in, first-out) control.

(Specific example of exclusive control of the first process and the second process)

Next, a specific example of the exclusive control of the above-mentioned first processing and second processing performed by the control unit 400 configured in this way will be described. Here, the process performed after the common exhaust system 310 is switched to the non-harmful common exhaust system 330 is called the first process, and the process performed after the common exhaust system 310 is switched to the harmful common exhaust system 320 is called the second process. Two processing.

In the above-mentioned first processing, for example, in addition to the rough pumping and exhausting process starting from a high pressure state (for example, a pressure state of 50 Torr or higher), automatic inspection processing or maintenance processing including such a rough pumping and exhausting process, Cleaning treatment accompanied by rough extraction and exhaust treatment (for example, particle reduction treatment (also called NPPC: Non-PlasmaParticle Cleaning.) after the introduction of passivation gas (or inert gas) to clean the treatment chamber. As the particle reduction process, in addition to the particle reduction process in which the atmosphere is released and vacuumed repeatedly while introducing a passivation gas such as _N2 gas into the process chamber, thereby removing the particles flying in the process chamber, there are, for example, the following particle reduction processes: Processing, etc., that is, by introducing a passivation gas such as _N2 gas into the processing chamber at a large flow rate, and using the gas shock wave (ShockWave: pressure wave propagating at supersonic speed) generated under specified conditions, the particles in the processing chamber are stripped and removed. In addition, in the particle reduction process utilizing particle shock waves, as will be described later, for example, there are cases where a large flow rate of passivating gas is continuously introduced into the processing chamber while exhausting (for example, by the piping configuration shown in FIG. 14 ). situation); and temporarily introduce a large flow of passivation gas into the processing chamber, and then continue to introduce a low flow of passivation gas while exhausting (for example, the situation carried out by the piping configuration shown in Figure 17).

In the above-mentioned second process, in addition to the processing of the wafer W such as etching or film formation, the following process is also included, that is, the cleaning process performed after introducing the process gas (for example, in the state where there is no wafer in the process chamber, while Introducing the processing gas while cleaning the processing chamber without wafer cleaning), etc., the opening processing of the gas introduction valve 214 for introducing the processing gas, the rough extraction and exhaust processing from a low pressure state, including the introduction of such processing gas or Automatic inspection processing or maintenance processing of rough extraction and exhaust processing starting from a low pressure state (for example, a pressure state lower than 50 Torr).

(Specific example of control when first processing is performed)

First, a specific example of control when each of the processing chambers 200A to 200D performs the first processing (for example, rough pumping and exhausting processing from a high pressure state) will be described. FIG. 12 is a flowchart showing a specific example of control when the first process is performed. As shown in FIG. 12 , when the first processing is performed in each processing chamber, the exclusive processing is performed first (steps S100 to S150 ), and then the first processing is started (steps S160 to S190 ).

In this exclusive control, it is first determined in step S100 whether or not there is a treatment room waiting for a reserved treatment. Specifically, it is judged whether there is a reserved process (task) in the table of the harmful device usage right reservation information 494 . This is because if the table of the detoxification device use right reservation information 494 has reserved processing in other processing rooms waiting to be processed, the processing is given priority.

In step S100, if it is judged that there is a treatment room waiting to be reserved, that is, there is a reserved processing (task) in the table of the detoxification device usage right reservation information 494, in step S120, it is displayed by the display part 450 that the first step cannot be performed. The process moves to the reservation process described later after step S130. This is to prevent the first process and the second process from being performed simultaneously in different process chambers. In addition, at this time, for example, a report may be made by the reporting unit 470 to let the operator know that the first process cannot be performed.

In addition, if it is judged in step S100 that there is no processing room waiting for reserved processing, that is, there is no reserved processing (task) in the table of the harmful device usage right reservation information 494, it is judged in step S110 whether other processing rooms are in progress. Second treatment. This is to prevent the first process and the second process from being performed simultaneously in different process chambers. Specifically, it is determined based on the processing status management information 492 of the storage unit 490 . For example, according to the example of the processing status management information 492 shown in FIG. 10 , since the second processing items of the processing chambers 200A to 200D are all "0", it can be determined that the processing chambers 200A to 200D do not perform the second processing. .

When it is determined in step S110 that the other processing chamber is not performing the second processing (for example, processing of the wafer W), the processing proceeds to the processing after step S160, and the first processing is started. Conversely, when it is determined in step S110 that the second process is being performed in another process chamber, it is displayed on the display unit 450 in step S120 that the first process cannot be performed. At this time, for example, a report may be made by the reporting unit 470 to let the operator know that the first process cannot be performed.

Thereafter, reservation processing is performed in steps S130 to S150. As far as the reservation process is concerned, firstly in step S130 the right to use the detoxification device 300 is reserved. Specifically, the right to use the detoxification device 300 (common exhaust system 310 ) is reserved in the data table of the detoxification device use right reservation information 494 of the storage unit 490 .

After that, it is judged in step S140 whether the other processing chambers have finished the second processing. Specifically, it is determined based on the processing status management information 492 of the storage unit 490 . For example, if according to the processing state management information 492, the second processing of other processing chambers ends, then since the item of the second processing of other processing chambers changes from "1" to "0", once this item becomes "0", then It can be judged that the other processing chamber ends the second processing. In addition, when it is determined in step S140 that the other processing chamber has not completed the second processing, it waits until the other processing chamber completes the second processing.

If it is determined in the above step S140 that the second treatment in the other treatment chamber is finished, it is determined in step S150 whether the right to use the detoxification device 300 can be obtained. Specifically, the determination is made according to the reservation order in the harm removal device usage right reservation information 494 . In addition, in the case of judging whether the right to use the detoxification device 300 can be obtained, for example, it is judged through the treatment status management information 492 whether other treatment rooms are performing the second treatment, and if it is determined that other treatment rooms are not performing the second treatment , it is determined that the right to use the detoxification device 300 can be acquired, and the process moves to the process after step S160, and the first process starts.

On the contrary, when it is judged that other processing chambers are performing the second treatment, it is judged that the right to use the detoxification device 300 cannot be obtained, and wait until the right to use the detoxification device 300 is obtained. This is because when different processing chambers perform the second processing in parallel, it does not become an object of exclusive control, so even while other processing chambers are performing the second processing, sometimes other processing chambers also start the second processing, so in this In this case, the first processing is not performed either. By performing such reservation processing, it is possible to automatically perform the processing of the processing chambers that are waiting for processing.

Next, a case where the first processing is started will be described. When starting the first process, first, recording of first process start information is performed in step S160. Specifically, for example, "1" is set (stored) in the first processing item in the data table of the processing status management information 492 .

After that, the first process is performed in step S170. The first process (for example, the rough extraction exhaust process from a high pressure state) is performed by opening the switching valve 350 of the detoxification device 300 and switching the common exhaust system 310 to the non-detoxification common exhaust system 330 . As a result, the exhaust gas discharged from the processing chamber is exhausted directly to, for example, an exhaust system of a factory without passing through the detoxification unit 340 .

After that, it is judged in step S180 whether the first processing is finished. If it is determined in step S180 that the first process is finished, then in step S190 the first process end information is recorded. Specifically, for example, "0" is set (stored) in the first processing item in the data table of the processing status management information 492 . In this way, a series of first processing including exclusive control with the second processing ends.

According to the control during the first processing of this embodiment, during the second processing (for example, the processing of the wafer W accompanied by the exhaust gas that needs to be eliminated) in any processing chamber, all other processing chambers do not perform the first processing. (For example, there is no need for rough extraction of exhaust gas treatment). Therefore, the second treatment is carried out in any treatment chamber, during which the detoxification device 300 carries out the detoxification and exhaust through the detoxification common exhaust system 320, the detoxification device 300 will not be switched to the one based on the non-destruction common exhaust system 330 halfway. Non-hazardous exhaust. Thereby, it is possible to prevent exhaust gas that must be detoxified from being discharged without being detoxified by the detoxification device 300 .

For example, as shown in Figure 5, the second processing is carried out in the processing chamber 200B, such as the processing of the wafer W that must be exhausted and detoxified, and during the detoxification and exhaust of the detoxification component 340 of the detoxification device 300, other processes The chamber, such as the processing chamber 200A, does not perform the first treatment, such as the rough extraction and exhaust treatment from the atmospheric pressure state that does not need to be exhausted. Therefore, as shown in FIG. 6 , since the switching valve 350 of the detoxification device 300 is not opened during the second process of the treatment chamber 200B, it is possible to prevent the exhaust gas from the treatment chamber 200B from being discharged without being detoxified by the detoxification device 300 .

Also, while a certain processing chamber is performing the second processing, for example, wafer W processing, the other processing chambers do not perform automatic inspection processing or maintenance processing including the first processing, such as rough pumping and exhaust processing from the atmospheric pressure state.

At this time, as described above, the entire automatic inspection process or maintenance process may be used as the first process, and these processes are not performed. In addition, only the rough extraction and exhaust process from the atmospheric pressure state in the automatic inspection process or maintenance process may be used. Partially as the first processing, these processings are simply not performed. This is because during the processing of the wafer W as the second process in a certain processing chamber, if other processing chambers do not perform at least rough extraction and exhaust processing from the atmospheric pressure state at the same time, the detoxification device 300 will not be switched to a non-toxic state. The common exhaust system 330 for detoxification can prevent the exhaust that must be detoxified from being discharged without being detoxified by the detoxification device 300 .

Therefore, in such a case, during the processing of the wafer W as the second process in a certain processing chamber, even if the automatic inspection processing or maintenance processing can be started in other processing chambers, the phase extraction from the atmospheric pressure state is performed. The processing stage is also exclusively controlled, and this rough exhaust gas processing cannot be performed.

In addition, in the specific example of the first treatment including the exclusive treatment shown in FIG. 12, since the first treatment (for example, the rough extraction and exhaust treatment from the atmospheric pressure state) is performed in different treatment chambers, the exclusive treatment is not performed, Therefore, sometimes each processing chamber will perform the first processing at the same time. At this time, since it is not necessary to eliminate any exhaust gas from different processing chambers, it is not a problem even if the detoxification device 300 is not exhausted through the detoxification component 340 .

However, when the first processing (for example, rough extraction and exhaust processing from atmospheric pressure) is performed in different processing chambers, the pressure state in the processing chambers may be different because the timing of starting the first processing is different in each processing chamber. In such a case, there is a concern that backflow of exhaust gas may occur from a high-pressure processing chamber to a low-pressure processing chamber. Therefore, it is preferable to perform exclusive control even when the first processing is performed in different processing chambers. In this case, for example, the second processing shown in FIG. 12 may be replaced with the first processing. This prevents different processing chambers from performing the first processing at the same time, so that backflow of exhaust gas into each processing chamber can be reliably prevented.

(Specific example of control when performing the second process)

First, a specific example of control when the processing chambers 200A to 200D perform the second processing (for example, processing of the wafer W) will be described. Fig. 13 is a flowchart showing a specific example of control when the second process is performed. As shown in FIG. 13 , when the second processing is performed in each processing chamber, the exclusive processing is performed first (steps S200 to S250 ), and then the second processing is started (steps S260 to S290 ).

In this exclusive control, it is first determined in step S200 whether or not there is a treatment room waiting for a reserved treatment. Specifically, it is judged whether there is a reserved process (task) in the table of the harmful device usage right reservation information 494 . This is because if the table of the detoxification device use right reservation information 494 has reserved processing in other processing rooms waiting to be processed, the processing is given priority.

In step S200, if it is judged that there is a treatment room waiting to be reserved, that is, there is a reserved processing (task) in the form of the harmful device usage right reservation information 494, in step S220, it is displayed by the display part 450 that the second step cannot be performed. The process moves to the reservation process described later after step S230. This is to prevent the first process and the second process from being performed simultaneously in different process chambers. In addition, at this time, for example, a report may be made by the reporting means 470 to let the operator know that the second process cannot be performed.

In addition, if it is judged in step S200 that there is no treatment room waiting to be reserved, that is, there is no reserved treatment (task) in the table of the harmful device usage right reservation information 494, it is determined in step S210 whether other treatment rooms perform the first treatment. deal with. This is to prevent the first process and the second process from being performed simultaneously in different process chambers. Specifically, it is determined based on the processing status management information 492 of the storage unit 490 .

When it is determined in step S210 that the other processing chamber is not performing the first processing (for example, the rough extraction and exhaust processing from the atmospheric pressure state), the process moves to the processing after step S260 and the second processing is started. On the contrary, when it is determined in step S210 that the other processing chamber is performing the first processing, it is displayed on the display part 450 in step S220 that the second processing cannot be performed. At this time, for example, a report may be made by the reporting unit 470 to let the operator know that the second process cannot be performed.

Thereafter, reservation processing is performed in steps S230 to S250. As far as the reservation process is concerned, firstly in step S230 the right to use the detoxification device 300 is reserved. Specifically, the right to use the detoxification device 300 (common exhaust system 310 ) is reserved in the data table of the detoxification device use right reservation information 494 of the storage unit 490 .

Afterwards, in step S240, it is judged whether other processing chambers have finished the first processing. Specifically, it is determined based on the processing status management information 492 of the storage unit 490 . For example, if according to the processing status management information 492, the first processing of other processing chambers ends, then since the item of the first processing of other processing chambers changes from "1" to "0", once this item becomes "0", then It can be judged that the other processing chamber has completed the first processing. In addition, when it is determined in step S240 that the other processing chamber has not completed the first processing, it waits until the other processing chamber completes the first processing.

If it is determined in step S240 that the first treatment in other treatment chambers is finished, it is determined in step S250 whether the use right of the detoxification device 300 can be obtained. Specifically, the determination is made according to the reservation order in the harm removal device usage right reservation information 494 . In addition, in the case of judging whether the right to use the detoxification device 300 can be obtained, for example, it is judged through the treatment status management information 492 whether other treatment rooms have not performed the first treatment, and if it is determined that other treatment rooms have not performed the first treatment Next, it is determined that the right to use the detoxification device 300 can be acquired, and the process moves to the process after step S260, and the second process starts.

On the contrary, when it is judged that other processing chambers are performing the first treatment, it is judged that the right to use the detoxification device 300 cannot be obtained, and wait until the right to use the detoxification device 300 is obtained. This is because when different processing chambers perform the first processing in parallel, they do not become the object of exclusive control, so even while other processing chambers are performing the first processing, other processing chambers sometimes start the first processing, so in this case Next, the second treatment is also not performed.

Next, the case where the second process is started will be described. When starting the second process, first, recording of the second process start information is performed in step S260. Specifically, for example, "1" is set (stored) in the second processing item in the data table of the processing status management information 492 .

After that, the second process is performed in step S270. The second process (such as processing of wafer W) is performed by closing the switch valve 350 of the detoxification device 300 and switching the common exhaust system 310 to the common detoxification exhaust system 320 . Thus, the exhaust gas discharged from the processing chamber is discharged to, for example, an exhaust system of a factory after being detoxified by the detoxification component 340 .

Afterwards, it is judged in step S280 whether the second processing is finished. If it is determined in step S280 that the second processing is finished, then in step S290 the second processing end information is recorded. Specifically, for example, "0" is set (stored) in the second processing item in the data table of the processing status management information 492 . In this way, a series of second processing including exclusive control with the first processing ends.

According to the control during the second processing of this embodiment, while any processing chamber is performing the first processing (for example, rough extraction and exhaust processing from a high pressure state), all other processing chambers do not perform necessary exhaust removal. Harmful second processing (for example, processing of the wafer W performed under a low pressure state). Therefore, the first treatment is carried out in any treatment chamber, and during the period when the detoxification device 300 performs non-detoxification and exhaust through the non-detoxification common exhaust system 330, the detoxification device 300 will not be switched to be based on the detoxification common exhaust system 320 halfway. detoxification exhaust. Thereby, it is possible to prevent the detoxification device 300 from exhausting through the detoxification component 340 before the treatment from the high pressure state that does not need detoxification, so the burden on the detoxification device 300 can be reduced.

For example, as shown in Figure 7, the first processing is carried out in the processing chamber 200B, for example, from the rough extraction and exhaust treatment of the atmospheric pressure state as a high pressure state, and the non-elimination of the detoxification component 340 without passing through the detoxification device 300 is implemented. During the harmful exhaust, other processing chambers, such as the processing chamber 200A, do not perform the second processing, such as the processing of the wafer W performed under a low pressure state. Therefore, as shown in Figure 8, because the switching valve 350 of the detoxification device 300 is not closed in the first process of the treatment chamber 200B, it is possible to prevent the exhaust from the treatment chamber 200B from being discharged through the detoxification component 340 of the detoxification device 300. . Thus, the burden on the detoxification device 300 can be reduced.

In addition, at this time, the common transfer chamber 150 is kept on standby, for example, without carrying the wafer W into the processing chamber while the rough extraction and exhaust processing is performed from the atmospheric pressure state. This is because processing gas or deposits (deopt) due to processing may remain in the processing chamber, and therefore processing may be performed if the wafer W is kept on standby in the processing chamber.

Therefore, in addition to the rough pumping and exhausting process started from the atmospheric pressure state, the above-mentioned first process includes rough pumping and exhausting process started from the atmospheric pressure state such as automatic inspection process and maintenance process. Therefore, while the first process such as automatic inspection process or maintenance process is performed in a certain process chamber, the second process such as wafer W processing is not performed in other process chambers.

At this time, as mentioned above, it is also possible to perform the entire automatic inspection process or maintenance process as the first process, and the other processing chambers do not perform the second process. The rough extraction exhaust gas treatment portion at the start of the state is regarded as the first treatment, and during the period when only these treatments are performed, the other treatment chambers do not perform the second treatment. This is because during the period when a certain processing chamber is at least performing rough extraction and exhaust treatment from the atmospheric pressure state, if other processing chambers do not simultaneously perform the processing of the wafer W as the second process, the detoxification device 300 will not be switched. For the common exhaust system 320 for detoxification, it can prevent the exhaust from the high pressure state through the detoxification component 340 of the detoxification device 300 .

Therefore, in such a case, even during automatic inspection processing or maintenance processing in a certain processing chamber, other processing chambers can perform the wafer W as the second processing if the rough extraction and exhaust processing from the atmospheric pressure state is not performed. processing. Conversely, while a certain processing chamber is performing rough extraction and exhaust processing from the atmospheric pressure state in automatic inspection processing or maintenance processing, other processing chambers cannot perform processing of the wafer W as the second processing.

In addition, the second processing includes not only processing of the wafer W but also processing of opening the gas introduction valve 214 for introducing a processing gas in maintenance processing, cleaning processing, and the like. This is because the process of opening the gas introduction valve 214 is also accompanied by exhaust treatment, so when the process gas that must be detoxified is introduced into the exhaust, it is necessary to switch such exhaust to the detoxification common exhaust system. 320. Exhaust air through the detoxification component 340 of the detoxification device 300 . Therefore, while a certain processing chamber is performing a first process, such as a rough exhaust process from an atmospheric pressure state, other processing chambers cannot perform a second process, such as a process in which the gas introduction valve 214 is opened.

In addition, in the above-described embodiment, the details from the start to the end of the processing of the wafer W as the second processing example are as follows. That is, when wafers W are continuously processed for every plurality (for example, one batch) in the processing chamber, for example, from the start of the continuous operation of each batch to the end of the continuous operation. In addition, when the processing chamber processes wafers W one by one, for example, the processing and manufacturing process before the wafer W is carried into the processing chamber is developed to the end of static electricity removal in the processing chamber after the wafer is carried out. At this time, in the case of performing wafer-free cleaning (WLDC) while introducing a process gas after unloading the wafer in order to remove deposits and the like in the processing chamber, the wafer-less cleaning is completed. This is because since the detoxification apparatus 300 must be occupied from the start to the end of the processing of the wafer W, it is necessary not to perform the first process in between.

In addition, in the processing of the wafer W, when an abnormality occurs in the substrate processing apparatus 100 and the processing is stopped, when the detoxification apparatus 300 is used in the recovery process, or in a process after the recovery process (for example, static electricity removal, etc.) When using the detoxification device 300, the reservation based on the detoxification device usage right reservation information 494 is temporarily canceled, and the use right of the detoxification device 300 is newly acquired for the restoration process. During the period when the exclusive control by the first process and the second process becomes the waiting process, the reservation based on the reservation information 494 of the right to use the harm-removing device is temporarily canceled as in the case of moving to the maintenance process, and the harm-removing device is newly acquired for the recovery process. 300 usage rights. Like this, under the situation of carrying out restoration processing or maintenance processing, owing to temporarily canceling the reservation based on the reservation information 494 of the right to use the harm-removing device, so the following defect can be avoided, that is, due to the existence of other processing based on the reservation information 494 of the right to use the harm-eliminating device Reservation, so the detoxification device 300 cannot be used in recovery processing or maintenance processing.

In addition, in the case of an independent maintenance process in which the maintenance process is performed after the process chamber is cut off, the exclusive control of the first process and the second process shown in FIGS. 12 and 13 is not performed in the process chamber. Therefore, in such an independent maintenance process, the first process or the second process can be performed regardless of whether other process chambers perform the first process or the second process. In addition, during the use of the detoxification device 300, if other treatment rooms are moved to independent maintenance and treatment, the use of the detoxification device 300 in other treatment rooms can also be suspended, and the detoxification device has been reserved in the detoxification device use right reservation information 494. Harm removal device 300 is used in other treatment chambers.

In addition, in the exclusive control of the first treatment and the second treatment in the above-mentioned embodiment, when one treatment is performed in a certain treatment room, when another treatment is performed in another treatment room, a predetermined reserved treatment is performed (for example, in FIG. 12, step S130 to step S150, and step S130 to step S150 in FIG. Perform reservation processing so that it ends with an error.

In addition, the above reservation processing may not be performed in the following cases. For example, in the case of performing the first treatment or the second treatment through the maintenance treatment performed by the operator, for example, the machining treatment at the time of maintenance, the treatment of independently operating the switching valve 270 and the gas introduction valve 214 of the auxiliary exhaust system 240, In the case of repeating the atmosphere release and vacuuming, and performing the circulation purification treatment of the exhaust of the processing gas remaining in the processing chamber, the atmosphere release treatment, and the cleaning treatment, these treatments are changed by the exclusive treatment of the first treatment or the second treatment above. In the case of waiting processing, the above-mentioned reserved processing is not performed, and cannot be performed due to an interlock, for example. This is because in the case of these processes, since the operator monitors the substrate processing apparatus 100 in many cases, the process does not need to be automatically performed by reservation, and the operator's operations can be freely performed to facilitate the use of the apparatus.

In addition, in the above-mentioned embodiment, the case where the common detoxification device 300 is connected to the exhaust systems 220A to 220D of all the processing chambers 200A to 200D included in the substrate processing apparatus 100 through the common exhaust system 310 is described. For at least two or more treatment chambers, the detoxification device can also be connected to the exhaust system of a part of the treatment chambers through a common exhaust system.

For example, the first detoxification device can also be connected to the processing chambers 200A and 200B through the first common exhaust system, and the second detoxification device can be connected to the treatment chambers 200C and 200D through the second common exhaust system. At this time, the exclusive control of the first process and the second process of this embodiment is performed for each process chamber connected to each common exhaust system. In addition, the detoxification device may be connected to the treatment chambers 200A to 200C via a common exhaust system, and the other detoxification devices may be connected only to the treatment chamber 200D. At this time, the exclusive control of the first process and the second process of this embodiment is performed on the process chambers 200A to 200C.

In addition, in the common exhaust system 310 of the above-mentioned embodiment, the common exhaust system 320 that exhausts the air through the harmful component 340 and the non-harmful common exhaust system that does not exhaust through the harmful component 340 are described. 330 are arranged together in the situation in the detoxification device 300, but not limited to this, only the common exhaust system 320 for detoxification can be set in the detoxification device 300, and the common exhaust system 330 and the detoxification device 320 are set separately . Therefore, the present invention can also be applied to the detoxification device 300 that does not form the non-detoxification common exhaust system 330 .

In addition, as mentioned above, the gas introduction system 210 is not limited to the configuration shown in FIG. 2 . Needless to say, any configuration of the gas introduction system 210 can be applied to the present invention, such as the type and flow rate of the gas introduced into the processing chamber 200 . Specifically, for example, in the case of introducing multiple gases, a plurality of conductor introduction systems connecting the gas supply source and the gas introduction valve (gas introduction valve) may be provided for each type of gas, so that the various gases are combined and then introduced into the processing chamber. 200 piping configuration. At this time, a gas introduction system may be provided for each of a plurality of processing gases. In addition, when a mixed gas with an inert gas is used as the processing gas, a gas introduction system for the inert gas may be added to the processing gas. Gas is introduced into the system. In addition, an inert gas introduction system can be added as a gas introduction system for opening to the atmosphere.

Here, a configuration example in which the gas introduction system 210 shown in FIG. 2 is configured by a process gas introduction system and an inert gas introduction system will be described with reference to FIG. 14 . Here, an inert gas introduction system is used for wafer processing and particle reduction processing by gas impact. When performing wafer processing, a predetermined flow rate of inert gas (such as _N2 gas) is continuously introduced into the processing chamber together with the processing gas, for example, as a pressure adjustment gas. A gas (for example N ₂ gas) is continuously introduced into the process chamber, for example as a passivation gas. In addition, in the following, as in the case of FIG. 2 , A to D are omitted from the symbols representing the constituent elements of the processing chambers 200A to 200D to represent explanations. Therefore, for example, the case of the processing chamber 200 represents the respective processing chambers 200A to 200D, and the case of the gas introduction system 210 represents the gas introduction systems 210A to 210D of the respective processing chambers 200A to 200D.

The gas introduction system 210 shown in FIG. 14 is configured such that the respective pipes of the processing gas introduction system 510 and the inert gas introduction system 520 are joined and connected to the processing chamber 200 . The processing gas introduction system 510 includes, for example, a processing gas supply source 512 and a gas introduction valve (gas introduction valve) 514 . In addition, the processing gas introduction system 510 may be arranged in parallel according to the type of processing gas, and each processing gas may be combined and then introduced into the processing chamber 200 .

The inert gas introduction system 520 includes, for example, an inert gas supply source 522, and is connected in parallel with a low flow rate introduction system (first introduction system) 530 that can introduce an inert gas from the inert gas supply source 522 into the processing chamber 200 at a prescribed low flow rate; The inert gas from the inert gas supply source 522 is introduced into the large flow rate introduction system (second introduction system) 540 of the processing chamber 200 by the low flow rate introduction system 530 and the high flow rate.

The low flow rate introduction system 530 includes a throttle valve 532 for adjusting the inert gas from the inert gas supply source 522 to a predetermined flow rate; and a gas introduction valve (gas introduction valve) 534 . The throttle valve 532 may be constituted by, for example, a fixed valve such as an orifice or a throttle valve, or may be constituted by a variable valve whose flow rate can be finely adjusted. In addition, the gas introduction valve 534 and the throttle valve 532 may be constituted by a single orifice valve. This low flow rate introduction system 530 is used when introducing a processing gas into the processing chamber 200 for, for example, wafer processing, and introducing an inert gas such as N ₂ gas into the processing chamber 200 as a pressure adjusting gas. When using the low flow rate introduction system 530 during such wafer processing, the flow rate of the inert gas adjusted by the throttle valve 532 is set to such a degree that the pressure of the processing chamber 200 can be adjusted.

The large flow rate introduction system 540 is connected to the downstream side of the above-mentioned low flow rate introduction system 530 via a gas introduction valve (gas introduction valve) 542 . This large flow rate introduction system 540 is used, for example, when performing a cleaning process for removing particles and the like in the processing chamber 200 while introducing an inert gas. As such a cleaning process, there is, for example, a particle reduction process (NPPC) in which an inert gas such as N ₂ gas is introduced into the process chamber 200 at a large flow rate while exhausting, and shock waves (ShockWave: exceeding The pressure wave propagating at the speed of sound) discharges the particles and the like peeled off from the inner wall and the like in the processing chamber 200 at the same time as exhausting. When the large flow rate introduction system 540 is used in such a particle reduction process, the flow rate of the inert gas in the large flow rate introduction system 540 is such that particles and the like in the processing chamber 200 can be removed by gas shock waves.

In addition, in the piping configuration example shown in FIG. 14, the case where the inert gas introduction system 520 is comprised by the low flow rate introduction system 530 and the large flow rate introduction system 540 of two systems was demonstrated, but it is not limited to this. For example, the inert gas introduction system 520 can also be composed of a system of introduction systems, and the flow rate of the inert gas can be adjusted to a low flow rate during wafer processing through the flow rate adjustment valve, and can be adjusted to a large flow rate during the particle reduction process. . However, in either configuration, since the inert gas is used as the pressure adjustment gas during wafer processing, when the flow rate of the inert gas is reduced to a low flow rate during wafer processing, it is necessary to always ensure a predetermined flow rate.

However, as described above, if the inert gas introduction system 520 is constituted by one system, since the adjustment from high flow rate to low flow rate is repeated by the flow rate adjustment valve, it may be difficult to always change the flow rate to low flow rate due to the difference in the performance of the flow rate adjustment valve. The flow rate is kept constant. In this regard, as shown in FIG. 14, when the inert gas introduction system 520 is set as two systems, a flow adjustment valve for adjusting from a large flow rate to a low flow rate is not required, and a predetermined flow rate can always be ensured with an inexpensive configuration. . In addition, by setting the inert gas introduction system 520 as two systems, switching control of the common exhaust system 310 in the detoxification device 300 described later is also facilitated.

When processing the wafer W in the processing chamber 200 constituted by such piping shown in FIG. In the same way as in the case of the above, vacuum treatment is performed to depressurize the inside of the processing chamber 200 to a predetermined pressure. Thereafter, when the evacuation process is completed, the gate valve is opened, and the wafer W is inserted into the process chamber 200 . When the wafer W is loaded on the loading table, the gate valve is closed, and the process proceeds to the wafer W processing step.

At this time, for example, as shown in FIG. 15 , switching valve 270 is closed to change exhaust system 220 into main exhaust system 230 . In this state, by opening the gas introduction valve 514 of the processing gas introduction system 510, the processing gas from the processing gas supply source 512 is introduced into the processing chamber 200, and at the same time, the gas introduction valve 542 of the inert gas introduction system 520 is closed and opened. The gas introduction valve 534 introduces the inert gas (for example, N 2 gas) from the inert gas supply source 522 into the processing chamber 200 through the low flow introduction system 530 , thereby starting the processing of the wafer W. At this time, the inert gas is used as the gas for pressure adjustment, and the pressure in the processing chamber 200 is maintained at a predetermined pressure. In this state, the above-mentioned wafer W is processed for a predetermined time.

In the case of using a processing gas containing harmful components in the processing of such a wafer W, as described above, since the exhaust gas containing harmful components is exhausted from the processing chamber 200, by closing the switching valve 350 of the detoxification device 300, the common The exhaust system 310 is switched to a common exhaust system 320 for detoxification. In this way, after the exhaust from the processing chamber 200 generated during the processing of the detoxified wafer W, for example, the exhaust to the exhaust system of the factory can be performed.

Thereafter, after the processing of the wafer W is completed and the wafer is unloaded, switching valve 270 is opened to change the exhaust system 220 to the auxiliary exhaust system 240 when, for example, the above-mentioned particle reduction process is performed. Next, in the state where the gas introduction valve 514 of the processing gas introduction system 510 and the gas introduction valve 534 of the inert gas introduction system 520 are closed, the gas introduction valve 542 is opened, and the gas from the inert gas supply source 522 is supplied through the large flow introduction system 540. An inert gas (such as N ₂ gas) is introduced into the processing chamber 200 . Thereby, the particles adhering to the inner wall of the processing chamber 200 etc. are peeled off by the gas shock wave of the inert gas (for example, N ₂ gas), and exhausted simultaneously.

In such particle reduction treatment, since an inert gas such as N ₂ gas that does not contain harmful components is used, it is not necessary to eliminate the harmful substances by the harmful component 300 . Not limited thereto, if the exhaust gas passes through the detoxification component 340 of the detoxification device 300 , the burden on the detoxification device 300 will increase. Therefore, when such particle reduction treatment is performed, the exhaust gas from the treatment chamber 200 is not discharged through the detoxification unit 340 as in the case of the above-mentioned cycle purification. Specifically, as shown in FIG. 16 , by opening the switch valve 350 of the detoxification device 300 , the common exhaust system 310 is switched to the non-detoxification common exhaust system 330 . Thus, the burden on the detoxification device 300 can be reduced.

In addition, in the particle reduction process, as shown in FIG. 16 , the inert gas is introduced into the processing chamber 200 using only the large-flow introduction system 540, but both the gas introduction valves 542 and 534 may be opened, and the large-flow introduction system 540 and the low The flow is introduced into both systems 530 to introduce the inert gas into the processing chamber 200 . Thus, a larger flow rate of inert gas can be introduced into the processing chamber 200 .

In addition, when processing is performed in parallel in the processing chambers 200A, 200B, etc. having the piping configuration shown in FIG. 14 , exclusive processing based on the first processing and the second processing shown in FIGS. 12 and 13 is performed. At this time, as shown in FIG. 15 , while the processing gas is introduced through the processing gas introduction system 510, the treatment of inert gas is introduced through the low flow introduction system 530, for example, the purification process is performed after the common exhaust system 310 is switched to the common exhaust system for detoxification. After gas system 320, it is equivalent to the second treatment. On the contrary, the treatment of introducing inert gas through the large-flow introduction system 540 (or both the large-flow introduction system 540 and the low-flow introduction system 530), such as particle reduction treatment, is to switch the common exhaust system 310 to a non-harmful common exhaust system. After 330, it is equivalent to the first processing.

By performing such exclusive processing, for example, while the processing chamber 200A is performing wafer processing corresponding to the second processing, other processing chambers 200B and the like do not perform the particle reduction processing corresponding to the first processing, but instead perform the particle reduction processing corresponding to the second processing in the processing chamber 200A. During the particle reduction process of the first process, the wafer processing corresponding to the second process is not performed in the other process chambers 200B and the like. Accordingly, it is possible to prevent the above-mentioned first treatment and the above-mentioned second treatment from being performed simultaneously in different treatment chambers. Therefore, in the substrate processing apparatus provided with the processing chamber 200 having the piping structure shown in FIG. 14 , the burden on the detoxification device 300 can be reduced, and the exhaust that requires detoxification can be reliably prevented from being discharged without detoxification.

Next, other configuration examples of the gas introduction system 210 shown in FIG. 2 will be described with reference to the drawings. FIG. 17 is a block diagram showing another configuration example of the gas introduction system 210 . The configuration example shown in FIG. 17 is a specific example of an atmosphere-opening system configured to open the inert gas introduction system shown in FIG. 14 to the atmosphere by introducing an inert gas (for example, N ₂ gas) into the processing chamber. Here, in addition to using such an inert gas introduction system when performing atmospheric release in the processing chamber, it is also used when performing particle reduction processing (for example, two-stage NPPC described later) in the processing chamber.

The gas introduction system 210 shown in FIG. The processing gas introduction system 610 includes, for example, a processing gas supply source 612, an upstream side gas introduction valve (upstream side gas introduction valve) 614, a flow controller (such as a mass flow controller) 615, a downstream side gas introduction valve (downstream side gas introduction valve). )616. In addition, the processing gas introduction system 610 may also be configured with a plurality of pipes arranged in parallel according to the type of processing gas, and each processing gas is merged and then introduced into the processing chamber 200 .

The inert gas introduction system 620 has, for example, an inert gas supply source 622, and is connected in parallel with a low flow rate introduction system (first introduction system) 630 that can introduce an inert gas from the inert gas supply source 622 into the processing chamber 200 at a certain low flow rate; The low-flow introduction system 630 introduces the high-flow inert gas from the inert gas supply source 622 into the processing chamber 200 at a high flow rate (the second introduction system) 640 .

The low flow rate introduction system 630 includes a damper 632 for adjusting the inert gas from the inert gas supply source 622 to a predetermined flow rate; and a downstream side gas introduction valve (downstream side gas introduction valve) 636 . The throttle valve 632 may be constituted by, for example, a fixed valve such as an orifice or a throttle valve, or may be constituted by a variable valve whose flow rate can be finely adjusted. In addition, the downstream side gas introduction valve 636 and the throttle valve 632 may be constituted by a single orifice valve. The large flow rate introduction system 640 is connected to the downstream side of the low flow rate introduction system 630 via a downstream side gas introduction valve (downstream side gas introduction valve) 646 .

The process gas introduction system 610 is connected to the inert gas introduction system 620 through a communication pipe 604 . Specifically, the downstream side of the upstream gas introduction valve 614 of the processing gas introduction system 610 and the downstream side of the upstream gas introduction valve 624 of the inert gas introduction system 620 are connected through a communication pipe 604 including a communication valve 606 . By opening the communication valve 606, the inert gas from the inert gas introduction system 620 is introduced into the processing chamber 200 through the flow regulator 615 of the processing gas introduction system 610, the downstream side gas introduction valve 616, and the main valve 602 after passing through the communication pipe 604. . Accordingly, the inert gas from the inert gas introduction system 620 can be introduced into the processing chamber 200 while adjusting the flow rate of the inert gas from the inert gas introduction system 620 by the flow regulator 615 of the processing gas introduction system 610 .

Next, a specific example of the cleaning process performed in the processing chamber 200 constituted by the piping shown in FIG. 17 will be described. The cleaning process here is, for example, particle reduction processing (NPPC). When an inert gas such as N ₂ gas is temporarily introduced into the processing chamber 200 at a large flow rate, the shock wave (Shock wave) generated under specified conditions is discharged while exhausting. Wave: a pressure wave propagating at a speed exceeding the speed of sound) Particles and the like detached from the inner wall and the like in the processing chamber 200 .

Such particle reduction processing is performed by the control unit 400 through the control shown in FIG. 18 , for example. FIG. 18 is a flowchart showing a specific example of control when particle reduction processing is performed. The particle reduction processing (NPPC) here is as shown in Figure 18, by the NPPC of two stages such as the first NPPC (step S300) as the first particle reduction processing and the second NPPC (step S400) as the second particle reduction processing. constitute. The first NPPC is a normal NPPC, which is a low-pressure NPPC performed in a low-pressure environment. In addition, the second NPPC is NPPC including a cleaning process by a gas shock wave, and is a high-pressure NPPC performed in a high-pressure environment.

Here, first, a specific example of the processing of the first NPPC (step S300 ) will be described with reference to FIG. 19 . As shown in FIG. 19 , the first NPPC first performs preliminary inspection in step S310 . The preliminary inspection is to check whether the processing chamber 200 is in a state where NPPC can be performed normally. For example, when a wafer is being processed, there is a wafer in the processing chamber, a wafer is being unloaded from the processing chamber, or maintenance is being performed, the processing chamber 200 is not in a state where NPPC can be performed normally.

When wafer processing is performed, for example, introduction of processing gas, introduction of baking gas used for temperature adjustment of the wafer, etc., control of an electrostatic chuck for attracting and holding a wafer, control of a high-frequency power supply, and the like. As a case where the wafer is being unloaded, for example, the gate of the processing chamber is being opened. When maintenance is performed, for example, the lid of the processing chamber is opened.

In such a case, the processing chamber 200 is not in a state where NPPC can be performed normally. Therefore, these items are checked in advance, and when it is judged that the processing chamber 200 is not in a state where NPPC can be normally performed, the NPPC process is ended by mistake, and when it is judged that the processing chamber 200 is in a state that can normally perform NPPC, step S312 is performed. after processing.

Thereafter, in step S312, main extraction and exhaust processing is performed. Specifically, the main pump 260 exhausts the inside of the processing chamber 200 to a predetermined high vacuum pressure. In addition, for example, when the predetermined high vacuum pressure is not reached even after the predetermined time elapses, it is erroneously terminated due to a timeout. Next, in step S314 , pressure control is started by, for example, an unillustrated pressure regulating valve (APC) of the main exhaust system 230 to bring the inside of the processing chamber 200 to a predetermined cleaning pressure.

After that, an inert gas (such as N ₂ gas) is introduced into the processing chamber 200 in step S316 . Here, the inert gas is introduced from the processing gas introduction system 610 through the communication pipe 604 . Specifically, for example, as shown in FIG. 21 , the downstream side gas introduction valves 636 and 646 of the inert gas introduction system 620 are closed, the upstream side gas introduction valve 624 and the communication valve 606 are opened, and the upstream side of the processing gas introduction system 610 is closed. The side gas introduction valve 614 remains unchanged, and the downstream side gas introduction valve 616 and the main valve 602 are opened. Thus, the inert gas (such as N ₂ gas) from the inert gas supply source 622 is introduced into the processing chamber 200 from the processing gas introduction system 610 through the communication pipe 604 .

In addition, it is determined in step S318 whether the pressure in the processing chamber 200 is stable, and if it is determined that the pressure in the processing chamber 200 is stable, the applied voltage control is performed in step S320. Here, for example, the voltage applied to the electrostatic chuck for attracting and holding the wafer on the lower electrode is controlled. Specifically, the polarity change control of the applied voltage is repeated a predetermined number of times (for example, 5 times), that is, the applied voltage to the electrostatic chuck becomes positive, and after a predetermined time (for example, 2 seconds), it is turned off (0), and thereafter, the The voltage applied to the electrostatic chuck becomes negative, and after a predetermined time (for example, 2 seconds), it is turned off (0). Thus, since the particles in the processing chamber 200 are easily scattered, the particles can be effectively removed. When the control of applying the voltage in this way ends, the pressure control during cleaning is stopped in step S322. For example, an unillustrated pressure regulating valve (APC) of the main exhaust system 230 is fully opened.

Thereafter, after the upstream side gas introduction valve 624 of the inert gas introduction system 620 is closed in step S324, the introduction of the inert gas is stopped. At this time, the communication valve 606, the downstream side gas introduction valve 616 of the process gas introduction system 610, and the main valve 602 are kept open. In this state, the residual gas in the process gas introduction system 610 and the communication pipe 604 is exhausted by performing vacuuming in step S326.

Thereafter, the main extraction and exhaust processing is performed again in step S328. Specifically, exhaust is performed by the main pump 260 until the inside of the processing chamber 200 reaches a predetermined high vacuum pressure. In addition, for example, when the predetermined high vacuum pressure has not been reached even after the predetermined time elapses, the process ends in error due to a timeout. In this way, the series of first NPPC ends, and the second NPPC proceeds.

Next, a specific example of the processing of the second NPPC (step S400 ) will be described with reference to FIG. 20 . As shown in FIG. 20 , the second NPPC first closes, for example, an unillustrated pressure regulating valve (APC) of the main exhaust system 230 in step S410 to stop the main extraction exhaust process. Thereafter, the rough exhaust gas processing is started in step S412. Specifically, the auxiliary pump 250 is driven to exhaust the inside of the processing chamber 200 through the auxiliary exhaust system 240 . Furthermore, in order to protect the vacuum pressure gauge when the second NPPC is being processed, it is preferable to close the protection valve of the vacuum pressure gauge at the beginning of the second NPPC.

Thereafter, in step S414 , an inert gas is introduced into the processing chamber 200 through the inert gas introduction system 620 which is an atmosphere-opening system. Here, the inert gas is introduced using both the low flow rate introduction system 630 and the large flow rate introduction system 640 . Specifically, as shown in FIG. 22 , the downstream side gas introduction valves 636 and 646 and the main valve 602 are opened simultaneously with the upstream side gas introduction valve 624 to introduce the inert gas. In addition, in step S416, it waits for predetermined time (for example, 5 seconds) to pass. When the predetermined time elapses, the downstream side gas introduction valve 646 of the large flow rate introduction system 630 is closed in step S418, and only the inert gas is introduced from the low flow rate introduction system 640 as shown in FIG. 23 , for example.

Thereafter, applied voltage control is performed in step S420. As the applied voltage control here, for example, the same process as step S320 is performed. Thereafter, the introduction of the inert gas is stopped in step S422, and the rough extraction and exhaust process is ended in step S424. Specifically, firstly, the rough extraction and exhaust process is not changed. With the main valve 602 open, the upstream side gas introduction valve 624 and the downstream side gas introduction valve 646 of the inert gas introduction system 620 are closed, the introduction of the inert gas is stopped, and the waiting time is completed. The specified time has elapsed. Thereby, remaining particles can be removed. In addition, when a predetermined time elapses, the auxiliary pump 250 is stopped, and the rough extraction and exhaust processing is terminated.

Next, in step S426, the main pump 260 is driven, the main extraction and exhaust process is performed, and a series of second NPPC is completed. In addition, such second NPPC may be repeated a predetermined number of times.

According to such particle reduction processing (NPPC) shown in FIG. particles in it, etc. In addition, according to the second NPPC, by temporarily introducing a large flow rate of an inert gas (for example, N _gas ) into the processing chamber 200 for a predetermined time (for example, 5 seconds), a gas shock wave is generated thereby, so that it is possible to effectively peel off the adhering Particles on the inner wall of the chamber 200, etc. are treated.

In addition, regarding the particle reduction treatment (NPPC) shown in FIG. 18 , as described above, the treatment performed in the treatment chamber 200 is detoxification without exhausting at least, from a high pressure state (for example, above 50 Torr [66.6hPa] ) in the case of starting processing, the common exhaust system 310 is switched to a non-harmful common exhaust system 330, and in the case of other processing, the common exhaust system 310 is switched to a harmful common exhaust system 320 . Thus, with regard to the particle reduction process (NPPC) shown in FIG. 18 , the burden on the detoxification device 300 can be reduced.

However, in the case where the first NPPC and the second NPPC of the particle reduction process (NPPC) shown in FIG. Then, as shown in FIGS. 21 to 23 , in each processing chamber, the common exhaust system 310 is exhausted through the common exhaust system 320 through the harmful component 340 . Therefore, if the second NPPC is a process of continuously introducing a large flow of inert gas as shown in FIG. 14 , then if a plurality of processing chambers continuously discharge a large flow of inert gas at the same time, it is considered that the burden on the detoxification device 300 will increase.

In this regard, according to the second NPPC shown in FIG. 20 , a large flow rate of inert gas is not continuously introduced, and only a large flow rate of inert gas is temporarily introduced. Therefore, according to the second NPPC shown in FIG. 20, even if a plurality of processing chambers perform the second NPPC at the same time, the time required for exhausting a large flow rate of inert gas is extremely short, which is comparable to the case of continuously introducing a large flow rate of inert gas. Compared, the burden on the detoxification device 300 can be greatly reduced.

In addition, the particle reduction process (NPPC) shown in FIG. 18 is performed, for example, at the time of a maintenance process. In addition, the particle reduction process (NPPC) shown in FIG. 18 is performed by an automatic inspection process (self-inspection process) at a predetermined time interval or at a predetermined number of processed objects per wafer. At this time, before performing the main extraction and exhaust processing (step _S312 ) of the first NPPC shown in FIG. Simultaneously, after carrying out the second NPPC shown in FIG. 20 main extraction and exhaust treatment (step S426), eliminate the NPPC in the display part 450 and carry out intermediate display, and then start the purification treatment by inert gas (such as N ₂ gas).

For example, when the automatic inspection process (self-inspection process) is set to carry out the particle reduction process (NPPC) shown in FIG. In the middle of batch processing of wafer processing, it is the case of moving to particle reduction processing (NPPC). In this case, since it is also possible to move to the particle reduction process (NPPC) during the purification process with an inert gas (such as _N2 gas), it is necessary to move to the particle reduction process (NPPC) after stopping the purification process of the inert gas. ). On the contrary, in the case of the maintenance process, since the purge process has not been completed before moving to the maintenance process, it is not necessary to stop and restart the inert gas purge process.

In addition, the particle reduction process (NPPC) shown in FIG. 18 may be performed not only on the process chamber 200 but also on the load lock chamber 160 . At this time, the particle reduction treatment (NPPC) may be repeated several times.

In addition, the present invention described in detail in the above-mentioned embodiments can be applied to a system composed of a plurality of devices, and can also be applied to a device composed of a single device. Needless to say, a medium such as a storage medium storing a program of software for realizing the functions of the above-described embodiments is provided to a system or device, and a computer (or CPU or MPU) of the system or device reads and executes the program stored in the storage medium or the like. program, thereby realizing the present invention.

In this case, the program itself read from a medium such as a storage medium realizes the functions of the above-described embodiments, and the medium such as a storage medium storing the program constitutes the present invention. Examples of media such as storage media for providing programs include floppy (registered trademark) disks, hard disks, optical disks, optical disks, CD-ROMs, CD-Rs, CD-RWs, DVD-ROMs, DVD-RAMs, and DVD-RWs. , DVD+RW, tape, non-volatile memory card, ROM, or download via the network, etc.

In addition, by running a program read by a computer, not only the functions of the above-mentioned embodiments are realized, but also the OS or the like running on the computer performs a part or all of the actual processing according to the instructions of the program, and the functions of the above-mentioned embodiments are realized by the processing. It is also included in the present invention.

And, after writing a program read from a medium such as a storage medium into a memory provided in a function expansion board inserted into a computer or a function expansion unit connected to a computer, the function diffusion board or function The case where a CPU or the like provided in the expansion unit executes part or all of the actual processing, and the functions of the above-described embodiments are realized by the processing is also included in the present invention.

The best mode for carrying out the present invention has been described above with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to the above examples. It is obvious to those skilled in the art that various modifications or amendments are within the scope described in the claims, and of course belong to the technical scope of the present invention.

For example, in the above-mentioned embodiments, a so-called cluster-type substrate processing apparatus in which a processing unit is connected with a plurality of processing chambers around a common transfer chamber has been exemplified. The present invention can also be applied to various types of substrate processing apparatuses that stop operation due to an abnormality in the substrate processing apparatus, in addition to a so-called tandem type substrate processing apparatus in which a plurality of processing units are connected.

Industrial availability

The present invention is applicable to a substrate processing device equipped with a detoxification device for detoxifying exhaust gas emitted during substrate processing of semiconductor wafers or liquid crystal substrates, a control method and a program for the substrate processing device.

Claims (24)

1. A substrate processing device, characterized in that, possesses: A plurality of processing chambers for introducing gas and performing prescribed processing; Exhaust systems respectively arranged in each of the processing chambers; A common exhaust system that connects the exhaust systems of at least two or more treatment chambers in the exhaust systems of the treatment chambers, wherein the common exhaust system is configured as a switchable common exhaust system for detoxification and a non-detoxification common exhaust system. Common exhaust system, the common exhaust system for detoxification eliminates and discharges the exhaust from the exhaust systems of the treatment chambers through the detoxification components, and the non-detoxification common exhaust system discharges the exhaust from all the detoxification components without passing through the detoxification components. The exhaust of the exhaust system of each processing chamber is described, It also has a control unit for switching control between the common exhaust system for detoxification and the common exhaust system for non-destroyer according to the type of treatment performed by each of the treatment chambers, When the plurality of processing chambers connected to the common exhaust system perform processing in parallel, the control unit performs prescribed exclusive control so that the common exhaust system is switched to the non-harmful common exhaust system One of the first treatment constituted by subsequent treatment and the second treatment constituted by switching the common exhaust system to the common exhaust system for detoxification is performed in the plurality of treatment chambers While one process chamber is performing a process, the other process chambers of the plurality of process chambers are not performing another process. 2. The substrate processing apparatus according to claim 1, characterized in that: having a use right reservation information storage unit for storing reservation information of the use right of the common exhaust system in each processing chamber, Exclusive control in each processing chamber In the case where one of the first processing and the second processing is performed in one of the plurality of processing chambers connected to the common exhaust system, determining whether a process is being performed in another of the plurality of process chambers connected to the common exhaust system, performing another process when it is judged that the other process chamber does not perform the one process, When it is determined that the other processing chamber is performing the one processing, another processing is set as a waiting processing state, and the usage right reservation information of the common exhaust system is stored in the usage right reservation information storage means, and then , perform a reservation process of performing another process based on the reservation information of the usage right reservation information storage means. 3. The substrate processing apparatus according to claim 2, characterized in that: The reserved processing performs the other processing of the processing chamber in the processing waiting state after the processing in one of the other processing chambers ends. 4. The substrate processing apparatus according to claim 3, characterized in that: When the use right reservation information of the common exhaust system is stored in the use right reservation information storage means for a plurality of processing chambers, the reservation process is performed in the order in which the reservation information is stored. deal with. 5. The substrate processing apparatus according to any one of claims 1 to 4, characterized in that: The first treatment does not require exhaust and detoxification and at least includes the treatment accompanied by the exhaust treatment of the treatment chamber above the specified pressure, and the second treatment includes at least the exhaust treatment accompanied by the need for exhaust and detoxification processing. 6. The substrate processing apparatus according to claim 5, characterized in that: The first process is a rough extraction and exhaust process of the processing chamber or a process including the rough extraction and exhaust process, and the second process is a process gas introduction process accompanying the exhaust of the processing chamber or includes the process. The processing of the processing gas introduction processing is described. 7. The substrate processing apparatus according to claim 6, characterized in that: The first process is an automatic inspection process or maintenance process of the process chamber including a rough exhaust process of the process chamber. 8. The substrate processing apparatus according to claim 6 or 7, characterized in that: The second process is an automatic inspection process or maintenance process of the processing chamber including process gas introduction process into the processing chamber. 9. The substrate processing apparatus according to claim 5, characterized in that: Each of the first process and the second process is a rough exhaust process of the process chamber or a process including the rough exhaust process. 10. A substrate processing device, characterized in that it comprises: A plurality of processing chambers for introducing gas and performing prescribed processing; Exhaust systems respectively arranged in each of the processing chambers; A common exhaust system that connects the exhaust systems of at least two or more treatment chambers in the exhaust systems of the treatment chambers, wherein the common exhaust system is configured as a switchable common exhaust system for detoxification and a non-detoxification common exhaust system. Common exhaust system, the common exhaust system for detoxification eliminates and discharges the exhaust from the exhaust systems of the treatment chambers through the detoxification components, and the non-detoxification common exhaust system discharges the exhaust from all the detoxification components without passing through the detoxification components. The exhaust of the exhaust system of each processing chamber is described, It also has a control unit for switching control between the common exhaust system for detoxification and the common exhaust system for non-destroyer according to the type of treatment performed by each of the treatment chambers, A gas introduction system for introducing gas into the processing chamber is constituted by a processing gas introduction system for introducing a processing gas and an inert gas introduction system for introducing an inert gas, The inert gas introduction system includes a first introduction system for introducing the inert gas at a predetermined flow rate; and a second introduction system for introducing the inert gas at a flow rate greater than that of the first introduction system. 11. The substrate processing apparatus according to claim 10, characterized in that: At least the inert gas is introduced through the second introduction system when the particle reduction treatment in the treatment chamber is performed. 12. The substrate processing apparatus according to claim 11, characterized in that: When performing the particle reduction process in the processing chamber, first, the inert gas is introduced only for a predetermined time through at least the second introduction system, and thereafter, the inert gas is supplied only through the first introduction system. 13. A method for controlling a substrate processing device, comprising: A plurality of processing chambers for introducing gas and performing prescribed processing; Exhaust systems respectively disposed in said respective processing chambers; and A common exhaust system that connects the exhaust systems of at least two or more treatment chambers in the exhaust systems of the treatment chambers, the common exhaust system is configured as a switchable common exhaust system for eliminating harmful effects and a common exhaust system for non-harm eliminating The common exhaust system for detoxification eliminates and discharges the exhaust from the exhaust systems of the treatment chambers through the detoxification components, and the non-detoxification common exhaust system discharges the exhaust from the detoxification components without passing through the detoxification components. Exhaust from the exhaust system of the processing chamber, According to the type of treatment performed by each of the treatment chambers, the switching control of the common exhaust system for eliminating harmful effects and the common exhaust system for eliminating harmful effects is performed, When the plurality of processing chambers connected to the common exhaust system perform processing in parallel, the control unit performs prescribed exclusive control so that the common exhaust system is switched to the non-harmful common exhaust system One of the first treatment constituted by subsequent treatment and the second treatment constituted by switching the common exhaust system to the common exhaust system for detoxification is performed in the plurality of treatment chambers While one process chamber is performing a process, the other process chambers of the plurality of process chambers are not performing another process. 14. The method for controlling a substrate processing apparatus according to claim 13, said substrate processing apparatus having a right-to-use reservation information storage means for storing reservation information on the right to use the common exhaust system in each processing chamber, wherein In that, with: Exclusive control in each of the processing chambers in a case where one of the first processing and the second processing is performed by one of the plurality of processing chambers connected to the common exhaust system , the process of determining whether a process is performed in another process chamber of the plurality of process chambers connected to the common exhaust system; and When it is judged that the other processing chamber does not perform the one processing, another processing is performed, and when it is judged that the other processing chamber performs the one processing, the other processing is regarded as a waiting processing state, and the common row The right-to-use reservation information of the gas system is stored in the right-to-use reservation information storage means, and thereafter, a reservation process is performed in which another process is performed based on the reservation information in the right-to-use reservation information storage means. 15. The control method of the substrate processing apparatus according to claim 14, characterized in that: The reserved processing performs the other processing of the processing chamber in the processing waiting state after the processing in one of the other processing chambers ends. 16. The method for controlling a substrate processing apparatus according to claim 15, characterized in that: When the use right reservation information of the common exhaust system is stored in the use right reservation information storage means for a plurality of processing chambers, the reservation process is performed in the order in which the reservation information is stored. deal with. 17. The method for controlling a substrate processing apparatus according to any one of claims 13 to 16, characterized in that: The first treatment does not require exhaust and detoxification and at least includes the treatment accompanied by the exhaust treatment of the treatment chamber above the specified pressure, and the second treatment includes at least the exhaust treatment accompanied by the need for exhaust and detoxification processing. 18. The method for controlling a substrate processing apparatus according to claim 17, characterized in that: The first process is a rough extraction and exhaust process of the processing chamber or a process including the rough extraction and exhaust process, and the second process is a process gas introduction process accompanying the exhaust of the processing chamber or includes the process. The processing of the processing gas introduction processing is described. 19. The method for controlling a substrate processing apparatus according to claim 15, characterized in that: The first process is an automatic inspection process or maintenance process of the process chamber including a rough exhaust process of the process chamber. 20. The method for controlling a substrate processing apparatus according to claim 18 or 19, characterized in that: The second process is an automatic inspection process or maintenance process of the processing chamber including process gas introduction process into the processing chamber. 21. The method for controlling a substrate processing apparatus according to claim 17, characterized in that: Each of the first process and the second process is a rough exhaust process of the process chamber or a process including the rough exhaust process. 22. A method for controlling a substrate processing device, comprising: A plurality of processing chambers for introducing gas and performing prescribed processing; Exhaust systems respectively disposed in said respective processing chambers; and A common exhaust system that connects the exhaust systems of at least two or more treatment chambers in the exhaust systems of the treatment chambers, the common exhaust system is configured as a switchable common exhaust system for eliminating harmful effects and a common exhaust system for non-harm eliminating The common exhaust system for detoxification eliminates and discharges the exhaust from the exhaust systems of the treatment chambers through the detoxification components, and the non-detoxification common exhaust system discharges the exhaust from the detoxification components without passing through the detoxification components. Exhaust from the exhaust system of the processing chamber, According to the type of treatment performed by each of the treatment chambers, the switching control of the common exhaust system for eliminating harmful effects and the common exhaust system for eliminating harmful effects is performed, A gas introduction system for introducing gas into the processing chamber is constituted by a processing gas introduction system for introducing a processing gas and an inert gas introduction system for introducing an inert gas, The inert gas introduction system includes a first introduction system for introducing the inert gas at a predetermined flow rate; and a second introduction system for introducing the inert gas at a flow rate greater than that of the first introduction system. 23. The method for controlling a substrate processing apparatus according to claim 22, characterized in that: At least the inert gas is introduced through the second introduction system when the particle reduction treatment in the treatment chamber is performed. 24. The method for controlling a substrate processing apparatus according to claim 23, characterized in that: When performing the particle reduction process in the processing chamber, first, the inert gas is introduced only for a predetermined time through the second introduction system, and then the inert gas is supplied only through the first introduction system.

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