CN100383919C - Restoration processing method of substrate processing apparatus, substrate processing apparatus - Google Patents
Restoration processing method of substrate processing apparatus, substrate processing apparatus Download PDFInfo
- Publication number
- CN100383919C CN100383919C CNB2006100069197A CN200610006919A CN100383919C CN 100383919 C CN100383919 C CN 100383919C CN B2006100069197 A CNB2006100069197 A CN B2006100069197A CN 200610006919 A CN200610006919 A CN 200610006919A CN 100383919 C CN100383919 C CN 100383919C
- Authority
- CN
- China
- Prior art keywords
- processing
- substrate
- processed
- chamber
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims abstract description 1208
- 239000000758 substrate Substances 0.000 title claims abstract description 649
- 238000003672 processing method Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 320
- 230000008569 process Effects 0.000 claims abstract description 296
- 238000011084 recovery Methods 0.000 claims abstract description 88
- 230000005856 abnormality Effects 0.000 claims abstract description 58
- 238000012546 transfer Methods 0.000 claims description 204
- 239000002245 particle Substances 0.000 claims description 103
- 238000005259 measurement Methods 0.000 claims description 91
- 230000032258 transport Effects 0.000 claims description 90
- 230000007246 mechanism Effects 0.000 claims description 66
- 230000007723 transport mechanism Effects 0.000 claims description 56
- 238000004140 cleaning Methods 0.000 claims description 33
- 238000010926 purge Methods 0.000 claims description 30
- 238000001514 detection method Methods 0.000 claims description 27
- 238000007689 inspection Methods 0.000 claims description 27
- 230000007547 defect Effects 0.000 claims description 26
- 238000012958 reprocessing Methods 0.000 claims description 16
- 235000012431 wafers Nutrition 0.000 abstract description 601
- 238000005530 etching Methods 0.000 description 61
- 239000007789 gas Substances 0.000 description 49
- 238000010586 diagram Methods 0.000 description 18
- 230000006641 stabilisation Effects 0.000 description 18
- 238000011105 stabilization Methods 0.000 description 18
- 230000006870 function Effects 0.000 description 11
- 230000000087 stabilizing effect Effects 0.000 description 7
- 238000007730 finishing process Methods 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 102100031478 C-type natriuretic peptide Human genes 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 101000796277 Homo sapiens C-type natriuretic peptide Proteins 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- NAIXASFEPQPICN-UHFFFAOYSA-O p-nitrophenylphosphocholine Chemical compound C[N+](C)(C)CCOP(O)(=O)OC1=CC=C([N+]([O-])=O)C=C1 NAIXASFEPQPICN-UHFFFAOYSA-O 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- -1 attachments Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60B—VEHICLE WHEELS; CASTORS; AXLES FOR WHEELS OR CASTORS; INCREASING WHEEL ADHESION
- B60B17/00—Wheels characterised by rail-engaging elements
- B60B17/0006—Construction of wheel bodies, e.g. disc wheels
- B60B17/0013—Construction of wheel bodies, e.g. disc wheels formed by two or more axially spaced discs
- B60B17/0017—Construction of wheel bodies, e.g. disc wheels formed by two or more axially spaced discs with insonorisation means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60B—VEHICLE WHEELS; CASTORS; AXLES FOR WHEELS OR CASTORS; INCREASING WHEEL ADHESION
- B60B17/00—Wheels characterised by rail-engaging elements
- B60B17/0006—Construction of wheel bodies, e.g. disc wheels
- B60B17/0024—Construction of wheel bodies, e.g. disc wheels with noise reducing means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B61—RAILWAYS
- B61F—RAIL VEHICLE SUSPENSIONS, e.g. UNDERFRAMES, BOGIES OR ARRANGEMENTS OF WHEEL AXLES; RAIL VEHICLES FOR USE ON TRACKS OF DIFFERENT WIDTH; PREVENTING DERAILING OF RAIL VEHICLES; WHEEL GUARDS, OBSTRUCTION REMOVERS OR THE LIKE FOR RAIL VEHICLES
- B61F13/00—Rail vehicles characterised by wheel arrangements, not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60B—VEHICLE WHEELS; CASTORS; AXLES FOR WHEELS OR CASTORS; INCREASING WHEEL ADHESION
- B60B2900/00—Purpose of invention
- B60B2900/10—Reduction of
- B60B2900/133—Noise
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
本发明提供一种基板处理装置的复原处理方法,在由至少包括对从基板收纳容器输送的晶片(W)进行处理的处理室的多个室所组成的基板处理装置中,在因该基板处理装置的工作中产生异常而工作停止时,在异常解除后复原基板处理装置的状态,包括:基板回收工序(S110~S150步骤中),对滞留在基板处理装置的各室内晶片(W)进行对应于直到工作停止时实施的处理阶段的基板挽救处理,将被处理基板向基板收纳容器回收;和装置内状态复原工序(S160步骤中等),使基板处理装置的各室内的状态复原。用于在基板处理装置的工作中因产生异常而停止工作时,节省该基板处理装置的复原处理时间和工夫,并尽可能多地挽救滞留在基板处理装置内的被处理基板。
The present invention provides a recovery processing method of a substrate processing apparatus. When an abnormality occurs during the operation of the device and the operation stops, the state of the substrate processing device is restored after the abnormality is resolved, including: a substrate recovery process (in steps S110 to S150), and corresponding to wafers (W) staying in each chamber of the substrate processing device In the substrate salvage process performed until the work is stopped, the substrate to be processed is recovered into the substrate storage container; and the state restoration process in the device (step S160, etc.) is to restore the state of each chamber of the substrate processing device. When the operation of the substrate processing apparatus is stopped due to an abnormality during operation, it saves time and labor for recovery processing of the substrate processing apparatus, and saves as many substrates to be processed staying in the substrate processing apparatus as possible.
Description
技术领域 technical field
本发明涉及例如对半导体晶片或液晶基板等被处理基板实施规定处理的基板处理装置,因发生异常而停止工作时的基板处理装置的复原处理方法、基板处理装置、程序。The present invention relates to a recovery processing method, a substrate processing apparatus, and a program when a substrate processing apparatus that performs predetermined processing on a substrate to be processed such as a semiconductor wafer or a liquid crystal substrate stops operating due to an abnormality.
背景技术 Background technique
一般,这种基板处理装置包括:具有对被处理基板例如对半导体晶片(下面均简称为“晶片”)进行规定处理的多个处理室的处理单元;和例如通过负载锁定室(load lock chamber)而连接在该处理单元上的输送单元。Generally, such a substrate processing apparatus includes: a processing unit having a plurality of processing chambers for performing predetermined processing on a substrate to be processed, for example, a semiconductor wafer (hereinafter referred to as "wafer" for short); And the delivery unit connected to the processing unit.
例如,在组合台型的基板处理装置中,一般是将所述多个处理室和负载锁定室以气体密封的状态连接在形成为矩形的共用输送室的周围,来构成所述处理单元。在共用输送室内设置有由输送臂等构成的处理单元侧输送机构,通过该处理单元侧输送机构,在多个处理室和负载锁定室之间进行晶片的送入和取出。在输送单元中,还设置有由输送臂等构成的输送单元侧输送机构,通过该输送单元侧输送机构,在收容有晶片的盒容器(基板收纳容器)和所述负载锁定室之间进行晶片的送入和取出。For example, in a multi-stage substrate processing apparatus, the processing unit is generally configured by connecting the plurality of processing chambers and load-lock chambers in a gas-tight manner around a common transfer chamber formed in a rectangular shape. A processing unit-side transfer mechanism including a transfer arm and the like is provided in the common transfer chamber, and wafers are carried in and out between the plurality of processing chambers and the load lock chamber by the processing unit-side transfer mechanism. In the transfer unit, there is also provided a transfer unit-side transfer mechanism composed of a transfer arm and the like, by which the wafer is transferred between the cassette container (substrate storage container) in which the wafer is stored and the load lock chamber. in and out.
在这样的基板处理装置中,当要对收容在基板收纳容器(例如盒容器)内的晶片实施规定处理时,首先,在输送单元中,通过输送单元侧输送机构从盒容器中取出未处理晶片。在将从盒容器中取出的未处理晶片在送入到负载锁定室之前,先送入到设置在输送单元上的定位装置(例如定位器、予定位载物台)上进行定位。将定位后的未处理晶片从定位装置取出,并送入到负载锁定室。In such a substrate processing apparatus, when a predetermined process is to be performed on a wafer stored in a substrate storage container (such as a cassette container), first, in the transfer unit, an unprocessed wafer is taken out of the cassette container by a transfer mechanism on the transfer unit side. . Before the unprocessed wafer taken out from the cassette container is sent into the load lock chamber, it is first sent to the positioning device (such as a positioner, a pre-positioning stage) provided on the transport unit for positioning. The positioned unprocessed wafers are removed from the positioning device and sent into the load lock chamber.
向负载锁定室送入的未处理的晶片,通过处理单元侧输送机构而从负载锁定室被取出,并向处理室送入,实施规定处理。在处理室中的处理结束后的结束处理晶片,通过处理单元侧输送机构而从处理室取出,并返回到负载锁定室。返回到负载锁定室的结束处理晶片通过输送单元侧输送机构而返回到盒容器。The unprocessed wafer carried into the load lock chamber is taken out from the load lock chamber by the processing unit side transfer mechanism, and carried into the processing chamber, where predetermined processing is performed. After the processing in the processing chamber is completed, the processed wafer is taken out of the processing chamber by the processing unit side transport mechanism, and returned to the load lock chamber. The processed wafers returned to the load lock chamber are returned to the cassette container by the transport unit side transport mechanism.
为了提高在这种基板处理装置中的各个处理室的处理效率,优选使未处理晶片尽可能地靠近处理室待机,所以,即使在处理室中正在进行处理期间,也要将未处理晶片依次从盒容器中取出,并使这些晶片在共用输送室、负载锁定室、定位装置等待机。然后,在处理室中完成了一块晶片的处理后,将结束处理的晶片直接收容在盒容器内,并将所述各待机中的未处理晶片顺序输送,将下一个未处理晶片直接向处理室输送。In order to improve the processing efficiency of each processing chamber in such a substrate processing apparatus, it is preferable to make unprocessed wafers stand by as close as possible to the processing chambers. Therefore, even during processing in the processing chambers, the unprocessed wafers are sequentially transferred from the processing chamber to the processing chamber. Take out the cassette container, and make these wafers wait in the common transfer chamber, load lock chamber, and positioning device. Then, after the processing of one wafer is completed in the processing chamber, the processed wafer is directly stored in the cassette container, and the unprocessed wafers on standby are sequentially transported, and the next unprocessed wafer is directly sent to the processing chamber. delivery.
然而,在这种基板处理装置中,若在工作中该基板处理装置发生故障、停电、漏电等异常情况,则对所述基板处理装置进行断电等使其紧急停止工作。在这种情况下,例如在处理室内正在处理的晶片的处理被中途打断而滞留在处理室内。此外,在输送单元内、共用输送室内、负载锁定室内等各个室内待机的晶片也原封不动地滞留在各室内。而且,当在各室内进行抽真空等压力控制时,因基板处理装置的工作停止而导致压力控制也停止,所以担心例如垃圾或者灰尘从排气一侧逆流,或者因晶片的处理造成的附着物等微粒漂浮。However, in such a substrate processing apparatus, if abnormalities such as failure, power outage, and electric leakage occur in the substrate processing apparatus during operation, the substrate processing apparatus will be powered off or otherwise shut down in an emergency. In this case, for example, the processing of the wafer being processed in the processing chamber is interrupted and stays in the processing chamber. In addition, wafers waiting in each chamber, such as the transfer unit, the common transfer chamber, and the load lock chamber, remain in each chamber as it is. In addition, when pressure control such as vacuuming is performed in each chamber, the pressure control is also stopped due to the stop of the operation of the substrate processing equipment, so there is concern that, for example, garbage or dust will flow back from the exhaust side, or adhesions caused by wafer processing Wait for the particles to float.
在现有技术中,当基板处理装置因产生异常而停止时,在该异常消除后,操作人员将滞留在基板处理装置的各室内的晶片取出,同时通过手工操作对输送单元、处理室、共用输送室、负载锁定室等各室内进行清理,以使基板处理装置的状态复原。In the prior art, when the substrate processing apparatus stops due to an abnormality, after the abnormality is eliminated, the operator will take out the wafers that remain in each chamber of the substrate processing apparatus, and at the same time perform manual operations on the transfer unit, processing chamber, common Each chamber, such as the transfer chamber and the load lock chamber, is cleaned to restore the state of the substrate processing equipment.
专利文献1:日本特开平11-330185号公报。Patent Document 1: Japanese Patent Application Laid-Open No. 11-330185.
如上所述,当基板处理装置紧急停止时,在现有技术中,由操作人员通过手工操作来进行基板处理装置的复原作业,因此,存在作业麻烦以及费时的问题。而且,对于在处理室内中断处理的晶片来说,由于要根据例如存储晶片的蚀刻状态等的记录等,判断此后如何对该晶片进行剩余处理(参照专利文献1),所以挽救晶片的处理也需要花费时间和工夫,同时,需要操作人员的经验和知识。As described above, when the substrate processing apparatus is stopped in an emergency, in the prior art, an operator manually restores the substrate processing apparatus, which is troublesome and time-consuming. And, for the wafer that is interrupted processing in the processing chamber, because will judge how to carry out remaining processing (referring to patent document 1) to this wafer after this according to the record etc. such as storage wafer etch state, so the processing of saving wafer also needs It takes time and effort, and at the same time, requires experience and knowledge of the operator.
关于这点,在因基板处理装置产生异常而停止工作的情况下,在解除异常后投入电源时还需要使所述各输送机构动作,将滞留在输送单元、处理室、共用输送室、负载锁定室等各室内的所有晶片自动回收到原来的盒容器中,由操作人员对回收的晶片进行处理。但是,在这样的情况下,虽然能够节省回收晶片所花费的工夫,但是对被回收晶片的剩余处理,与所述情况相同,由于需要操作人员的经验和知识,而不容易对其进行判断,仍然存在挽救晶片的处理需要花费时间和工夫的问题。Regarding this point, when the substrate processing apparatus is abnormal and stops working, it is necessary to activate the various conveying mechanisms when the power is turned on after the abnormality is removed, and the transfer mechanism will remain in the conveying unit, the processing chamber, the common conveying chamber, and the load lock. All the wafers in each chamber, such as the chamber, are automatically collected into the original cassette containers, and the recovered wafers are processed by the operator. However, in such a case, although it is possible to save the time spent on recovering the wafer, the remaining processing of the recovered wafer, as in the above case, is not easy to judge because it requires the experience and knowledge of the operator. There is still a problem that the process of saving the wafer takes time and effort.
此外,当如上所述那样基板处理装置产生异常时,在将滞留在该基板处理装置内的所有晶片自动回收到原来的盒容器的过程中,并不考虑在基板处理装置的工作停止时的晶片的处理阶段,由于滞留在基板处理装置内的晶片全部回收至盒容器中,所以全部晶片都暴露在大气中。然而,在多个处理室内的连续处理是必要的晶片,向下一个处理室输送的中途,滞留在共用输送室的情况,以及在某个处理室内的加工处理的中途被中断而滞留在该处理室内等的情况下,根据晶片的处理阶段,若在该阶段暴露于大气中,则有时不能挽救晶片。例如,如聚类的加工处理等那样,由于中途被中断的处理,而导致该晶片不能进行剩余处理(例如补充蚀刻处理等),因此不能挽救晶片。In addition, when an abnormality occurs in the substrate processing apparatus as described above, all the wafers remaining in the substrate processing apparatus are automatically collected into the original cassette containers, regardless of the wafers when the operation of the substrate processing apparatus is stopped. In the processing stage of the substrate processing apparatus, all the wafers remaining in the substrate processing apparatus are recovered into the cassette container, so all the wafers are exposed to the atmosphere. However, continuous processing in a plurality of processing chambers requires wafers to stay in a common transfer chamber while being transported to the next processing chamber, or the processing in a certain processing chamber is interrupted in the middle and stays in the processing chamber. In the case of a room or the like, depending on the processing stage of the wafer, it may not be possible to save the wafer if it is exposed to the atmosphere at that stage. For example, in the case of clustering processing, etc., the remaining processing (for example, supplementary etching processing, etc.) cannot be performed on the wafer due to the interrupted processing, and thus the wafer cannot be saved.
发明内容 Contents of the invention
因此,本发明是鉴于上述问题而提出的,其目的在于提供一种基板处理装置的复原处理方法、基板处理装置、程序,在基板处理装置的工作中因产生异常而停止工作时,可以节省该基板处理装置的复原处理的时间和花费的工夫,此外,在因基板处理装置产生异常而停止工作时,通过对滞留在基板处理装置内的被处理基板进行可靠地挽救处理,而能够尽可能多地挽救被处理基板。Therefore, the present invention is proposed in view of the above-mentioned problems, and its object is to provide a method for restoring a substrate processing apparatus, a substrate processing apparatus, and a program, which can save time when the operation of the substrate processing apparatus stops due to an abnormality. The time and effort required for the restoration process of the substrate processing equipment, and when the operation of the substrate processing equipment is stopped due to an abnormality, can be saved as much as possible by reliably rescuing the substrates to be processed that remain in the substrate processing equipment. effectively salvage the processed substrate.
为了解决所述课题,在本发明的一方面中,可以提供一种基板处理装置的复原处理方法,是在由至少包括对从基板收纳容器输送来的被处理基板进行处理的处理室的多个室所组成的基板处理装置中,当由于该基板处理装置的工作中产生异常而导致工作停止时,在该异常解除后,复原所述基板处理装置的状态的基板处理装置的复原处理方法,其中,所述基板处理装置的复原处理方法包括:基板回收工序,对于滞留在所述基板处理装置的各个室内的所述被处理基板,进行对应于直到所述工作停止时实施的处理阶段的基板挽救处理,将所述被处理基板向所述基板收纳容器回收;和装置内状态复原工序,使所述基板处理装置的各个室内的状态复原。In order to solve the above-mentioned problems, in one aspect of the present invention, there can be provided a method for recovering a substrate processing apparatus, comprising at least a plurality of processing chambers for processing a substrate to be processed transported from a substrate storage container. In a substrate processing apparatus composed of chambers, when the operation is stopped due to an abnormality in the operation of the substrate processing apparatus, after the abnormality is resolved, the restoration processing method of the substrate processing apparatus restores the state of the substrate processing apparatus, wherein , the recovery processing method of the substrate processing apparatus includes: a substrate recovery step, for the substrate to be processed remaining in each chamber of the substrate processing apparatus, performing substrate rescue corresponding to the processing stage performed until the operation is stopped. processing, collecting the substrate to be processed into the substrate storage container; and restoring the state in the apparatus, restoring the state of each chamber of the substrate processing apparatus.
在这样的本发明中,因基板处理装置的工作中产生异常而造成工作停止时,可以自动进行使基板处理装置的状态复原的处理,也就是滞留在基板处理装置内的被处理基板的回收和使基板处理装置内的状态复原的处理可以自动进行。这样,与现有技术中的由操作人员手动进行复原处理相比,可以大幅度节省复原处理的时间和工夫。此外,对于滞留在基板处理装置内的被处理基板,对应于直到因基板处理装置的异常造成工作停止时实施的处理阶段,进行相应的正确的挽救处理,可以尽可能多地挽救被处理基板。In such the present invention, when the operation is stopped due to an abnormality in the operation of the substrate processing apparatus, it is possible to automatically perform the process of restoring the state of the substrate processing apparatus, that is, the recovery and processing of the substrate to be processed remaining in the substrate processing apparatus. The process of restoring the state in the substrate processing apparatus can be performed automatically. In this way, compared with the manual restoration process performed by the operator in the prior art, the time and effort of the restoration process can be greatly saved. In addition, for the substrates to be processed staying in the substrate processing apparatus, according to the processing stage until the operation is stopped due to the abnormality of the substrate processing apparatus, appropriate rescue treatment is performed accordingly, and as many substrates to be processed as possible can be rescued.
此外,在所述方法中的基板挽救处理可以以具有以下工序的方式构成,例如:基板检测工序,检测在所述基板处理装置内滞留的所述被处理基板;处理阶段检测工序,对于通过所述基板检测工序检测出的被处理基板,检测直到所述工作停止时实施的处理阶段;和基板挽救工序,对于通过所述基板检测工序检测出的被处理基板,对应于通过所述处理阶段检测工序检测出的处理阶段,实施相应的基板挽救处理。In addition, the substrate salvage process in the method may be configured to include the following steps, for example: a substrate detection step, detecting the processed substrates staying in the substrate processing apparatus; a processing stage detection step, for The substrate to be processed detected by the substrate detection process is detected until the processing stage that is carried out when the work is stopped; In the processing stage detected by the process, the corresponding substrate salvage processing is implemented.
这种情况下,所述基板挽救工序例如在通过所述基板检测工序在所述处理室内检测出被处理基板,通过所述处理阶段检测工序检测出该被处理基板的处理阶段是还残留有在该处理室中的处理的处理中途阶段的情况下,在该处理室内对该被处理基板实施剩余的处理。这样,滞留在基板处理装置内的晶片,例如在处理室内的处理中途被中断的状态下滞留的、处于处理中途阶段的情况下,对于该被处理基板实施在该处理室的剩余的处理后,被回收到基板收纳容器中。这样,处于在处理室内的剩余处理中途阶段的被处理基板,由于不是如现有技术这样直接回收而暴露在大气中,所以可以挽救该被处理基板。In this case, for example, in the substrate saving step, the substrate to be processed is detected in the processing chamber by the substrate detection step, and whether the processing stage of the substrate to be processed is detected by the processing stage detection step remains In the middle of the processing in the processing chamber, the remaining processing is performed on the substrate to be processed in the processing chamber. In this way, when the wafers staying in the substrate processing apparatus, for example, stay in the state where the processing in the processing chamber is interrupted and are in the middle of the processing, after the remaining processing in the processing chamber is performed on the substrate to be processed, It is recovered into the substrate storage container. In this way, the processed substrates in the middle of the remaining processing in the processing chamber can be saved because they are not directly collected but exposed to the atmosphere as in the conventional technology.
此外,所述基板处理装置具有存储在该基板处理装置的工作中被处理基板的处理履历信息的存储装置,通过所述基板检测工序,在所述处理室内检测出被处理基板,通过所述处理阶段检测工序,在检测出该被处理基板的处理阶段是滞留在该处理室的处理的处理中途阶段的情况下,所述基板挽救工序根据存储在所述存储装置中的被处理基板的处理履历信息,设定被处理基板的剩余处理时间,可以对该被处理基板只实施此剩余处理时间的剩余处理。这样,通过根据被处理基板的处理履历信息设定被处理基板的剩余处理时间,可以对该被处理基板设定最佳剩余处理时间,所以可以正确地进行挽救被处理基板。In addition, the substrate processing apparatus has a storage device that stores processing history information of the substrate to be processed during operation of the substrate processing apparatus, and the substrate to be processed is detected in the processing chamber through the substrate detection step, and the substrate to be processed is detected through the processing In the stage detection step, when it is detected that the processing stage of the substrate to be processed is in the middle of processing in the processing chamber, the substrate saving step is based on the processing history of the substrate to be processed stored in the storage device. The information sets the remaining processing time of the substrate to be processed, and only the remaining processing of the remaining processing time can be performed on the substrate to be processed. In this way, by setting the remaining processing time of the substrate to be processed based on the processing history information of the substrate to be processed, the optimal remaining processing time can be set for the substrate to be processed, so that the substrate to be processed can be rescued accurately.
此外,所述基板处理装置可以包括在检测所述被处理基板的处理状态后、进行缺陷检查的缺陷检查室,当通过所述基板检测工序在所述处理室内检测出被处理基板,并且通过所述处理阶段检测工序检测出该被处理基板的处理阶段是滞留在该处理室的处理的处理中途阶段的情况下,所述基板挽救工序将该被处理基板输送到所述缺陷检查室,在该缺陷检查室中,根据被检测出的被处理基板的处理状态来设定该被处理基板的剩余处理时间,对该被处理基板只实施此剩余处理时间的剩余处理。这样,根据在缺陷检查室检测出的被处理基板的处理状态,通过设定被处理基板的剩余处理时间,可以对应于该被处理基板的实际处理状况设定剩余处理时间,可以更正确地对被处理基板进行挽救。In addition, the substrate processing apparatus may include a defect inspection chamber for performing defect inspection after detecting the processing state of the substrate to be processed. In the case where the processing stage detecting step detects that the processing stage of the substrate to be processed is in the middle of processing in the processing chamber, the substrate saving step transports the substrate to be processed to the defect inspection chamber, and In the defect inspection room, the remaining processing time of the substrate to be processed is set according to the detected processing state of the substrate to be processed, and only the remaining processing for the remaining processing time is performed on the substrate to be processed. In this way, by setting the remaining processing time of the substrate to be processed according to the processing status of the substrate to be processed detected in the defect inspection room, the remaining processing time can be set corresponding to the actual processing status of the substrate to be processed, and the processing time can be more accurately Processed substrates are salvaged.
此外,当通过所述基板检测工序检测出在从某个处理室向另外的处理室输送的中途的被处理基板,并且通过所述处理阶段检测工序检测出该被处理基板的处理阶段是残留有在另外的处理室的必要处理还没有处理完的阶段的情况下,所述基板挽救工序对该被处理基板实施在剩余的处理室的处理。这样,在基板处理装置中晶片例如在某个处理室中的处理完成,但是由于剩下在另外处理室的必要处理,所以在处于必须的全部处理没有完成的处理未完成的阶段的情况,对该被处理基板实施在剩余的另外的处理室的处理后,回收到基板收纳容器中。这样,处于处理未完成阶段的被处理基板,由于不是如现有技术中这样直接回收而暴露在大气中,所以可以挽救该被处理基板。In addition, when the substrate to be processed is detected in the process of being transported from a certain processing chamber to another processing chamber by the substrate detection step, and it is detected by the processing stage detection step that the processing stage of the substrate to be processed is left In the stage where necessary processing in another processing chamber has not been completed, the substrate salvage step performs processing in the remaining processing chamber on the substrate to be processed. In this way, in the substrate processing apparatus, for example, the processing of the wafer in a certain processing chamber is completed, but since the necessary processing in another processing chamber remains, in the case of an incomplete stage in which all necessary processing has not been completed, the The substrate to be processed is recovered into the substrate storage container after being processed in the remaining separate processing chamber. In this way, the processed substrates in the unfinished stage can be saved because they are not directly recovered and exposed to the atmosphere as in the prior art.
此外,当通过所述基板检测工序在某个室内检测出被处理基板,并且通过所述处理阶段检测工序检测出该被处理基板的处理阶段是未处理阶段或者处理完成阶段的情况下,所述基板挽救工序将该被处理基板向所述基板收纳容器回收。因为对于未处理阶段或处理完成阶段的被处理基板,直接回收到基板收纳容器即使暴露在大气中也没有问题。这样通过对应于被处理基板的处理阶段进行挽救处理,可以尽可能挽救滞留在基板处理装置内的被处理基板。In addition, when the substrate to be processed is detected in a certain chamber through the substrate detection step, and the processing stage of the substrate to be processed is detected to be an unprocessed stage or a processed stage through the processing stage detection step, the In the substrate saving step, the substrate to be processed is recovered in the substrate storage container. This is because there is no problem even if the processed substrates in the unprocessed stage or the processed stage are directly collected into the substrate storage container and exposed to the atmosphere. In this way, by performing the rescue treatment corresponding to the processing stage of the substrate to be processed, the substrate to be processed remaining in the substrate processing apparatus can be rescued as much as possible.
此外,在所述装置内状态复原工序中,所述基板处理装置的各室包括至少可以导入吹扫气体的气体导入系统、以及可以通过抽真空和向大气开放调整压力的排气系统,例如,可以实施所述基板处理装置的各室内的清理处理。例如所述基板处理装置的所述处理单元和所述输送单元的各室具有至少可以导入吹扫气体的气体导入系统、以及可以通过抽真空和向大气开放调整压力的排气系统,所述清理处理例如可以是通过所述气体导入系统将吹扫气体(例如,N2气体和惰性气体等)导入到基板处理装置的各个室内,通过所述排气系统抽真空或向大气开放来重复多次规定的处理。这样,可以去除漂浮在基板处理装置各室内的微粒(例如附着物、灰尘、废渣等)。此外,由于通过反复抽真空和向大气开放,附着在各室的壁面和各室内所配置的部件等上的微粒也剥落并强制漂浮,可以把它们去除。In addition, in the state recovery process in the apparatus, each chamber of the substrate processing apparatus includes a gas introduction system capable of introducing at least a purge gas, and an exhaust system capable of adjusting pressure by vacuuming and opening to the atmosphere, for example, A cleaning process may be performed in each chamber of the substrate processing apparatus. For example, each chamber of the processing unit and the conveying unit of the substrate processing apparatus has a gas introduction system capable of introducing at least purge gas, and an exhaust system capable of adjusting pressure by vacuuming and opening to the atmosphere. For example, the process may be repeated multiple times by introducing purge gas (for example, N2 gas and inert gas, etc.) into each chamber of the substrate processing apparatus through the gas introduction system, and evacuating or opening to the atmosphere through the exhaust system. prescribed processing. In this way, particles (such as attachments, dust, scum, etc.) floating in each chamber of the substrate processing apparatus can be removed. In addition, since the particles adhering to the wall surface of each chamber and components arranged in each chamber are also peeled off and forcibly floated by repeated vacuuming and opening to the atmosphere, they can be removed.
此外,检测被回收到所述基板收纳容器中的被处理基板检测是否是未处理阶段,若检测是未处理阶段,则也可以具有对该被处理基板实施再处理的再处理工序。这样处于没有处理阶段的被处理基板的再处理工序在一旦被回收到基板收纳容器后进行,所以也可以在装置内复原工序后进行。这样可以使处于没有处理阶段的被处理基板的处理与基板处理装置复原前一样进行。In addition, it is possible to include a reprocessing step of reprocessing the substrate to be processed by detecting whether the substrate to be processed collected in the substrate storage container is in an unprocessed stage or not. In this way, the reprocessing step of the substrate to be processed in the non-processing stage is carried out after once being collected into the substrate storage container, so it may be carried out after the recovery step in the apparatus. In this way, the processing of the substrate to be processed in the non-processing stage can be performed the same as before the substrate processing apparatus is restored.
此外,所述基板处理装置具有微粒测量室,并且,所述基板回收工序,在将所述被处理基板回收到所述基板收纳容器之前,输送到所述微粒测量室,在该微粒测量室进行所述被处理基板上的微粒量的测量,并将该测量结果与所述被处理基板相对应而存储在存储装置中。这样,关于实施了复原处理的被处理基板,可以根据微粒量测量结果判断是否是可以再处理的被处理基板。In addition, the substrate processing apparatus has a particle measurement chamber, and the substrate recovery step is carried out in the particle measurement chamber by transporting the substrate to be processed to the particle measurement chamber before collecting the substrate into the substrate storage container. The amount of particles on the substrate to be processed is measured, and the measurement result is stored in a storage device corresponding to the substrate to be processed. In this manner, it is possible to determine whether or not a substrate to be processed that has undergone recovery processing is a substrate to be processed that can be reprocessed based on the particle amount measurement result.
为了解决所述课题,在本发明的另一方面中,可以提供一种基板处理装置的复原处理方法,是在基板处理装置中,在由于该基板处理装置的工作中产生异常而使工作停止时,在该异常解除后使所述基板处理装置的状态复原的基板处理装置的复原处理方法,而且,所述基板处理装置包括:处理单元,由至少包括处理被处理基板的多个处理室的多个室所构成;输送单元,被连接在所述处理单元上,具有在与收纳所述被处理基板的基板收纳容器之间进行所述被处理基板的交接的输送室;输送单元侧输送机构,被设置在所述输送单元内,将所述被处理基板向所述处理单元送入和取出;和处理单元侧输送机构,被设置在所述处理单元内,将所述被处理基板向所述处理室送入和取出,其中,所述复原处理方法包括:基板回收工序,对于滞留在所述基板处理装置的所述处理单元和/或所述输送单元内的所述被处理基板,对应于直到所述工作停止时已实施的处理的阶段来进行基板挽救处理,通过所述处理单元侧输送机构和/或所述输送单元侧输送机构,将所述被处理基板向所述基板收纳容器回收;和装置内状态复原工序,使所述基板处理装置的所述处理单元内和所述输送单元内的状态复原。In order to solve the above-mentioned problems, in another aspect of the present invention, there can be provided a method for recovering a substrate processing apparatus, in which, when an abnormality occurs in the operation of the substrate processing apparatus, the operation is stopped. , the method for recovering the substrate processing apparatus to restore the state of the substrate processing apparatus after the abnormality is resolved, and the substrate processing apparatus includes: a processing unit comprising at least a plurality of processing chambers for processing substrates to be processed; Consisting of individual chambers; the transport unit is connected to the processing unit and has a transport chamber for transferring the processed substrate to and from the substrate storage container storing the processed substrate; the transport unit side transport mechanism, a processing unit-side conveying mechanism provided in the processing unit to transport the processed substrate to the processing unit; The processing chamber is brought in and taken out, wherein, the recovery processing method includes: a substrate recovery process, for the processed substrates that remain in the processing unit and/or the transport unit of the substrate processing device, corresponding to The substrate salvage process is performed up to the stage of the process performed when the operation is stopped, and the substrate to be processed is recovered into the substrate storage container by the process unit side transport mechanism and/or the transport unit side transport mechanism and a step of restoring the state in the apparatus to restore the state in the processing unit and the transfer unit of the substrate processing apparatus.
在这种情况下,所述基板回收工序对于滞留在所述处理单元内的被处理基板,检测该被处理基板的处理阶段是否是剩余该被处理基板必须的处理的处理阶段,在剩余必须的处理的处理阶段的情况下,实施剩余的处理,通过所述处理单元侧输送机构和所述输送单元侧输送机构,向所述基板收纳容器回收,在不是剩余必须的处理的处理阶段的情况下,通过所述处理单元侧输送机构和所述输送单元侧输送机构,实施向所述基板收纳容器回收的处理单元内的基板挽救处理,对于滞留在所述输送单元内的被处理基板,也可以实施向所述基板收纳容器回收的输送单元内的基板挽救处理。In this case, the substrate recovering step detects whether the processing stage of the processed substrate remaining in the processing unit is a processing stage of the remaining necessary processing for the processed substrate, and if the processing stage of the remaining necessary processing is In the case of the processing stage of the processing, the remaining processing is carried out, and the processing unit side conveying mechanism and the conveying unit side conveying mechanism are used to recover the substrate storage container. The substrate rescue process in the processing unit recovered into the substrate storage container is carried out by the processing unit-side conveying mechanism and the conveying unit-side conveying mechanism, and the substrate to be processed remaining in the conveying unit may be A substrate salvage process in the transfer unit that is recovered to the substrate storage container is performed.
在这样的本发明中,因基板处理装置的工作中产生异常而使工作停止时,可以自动进行使基板处理装置的状态复原的处理,也就是可以自动进行滞留在处理单元内和/或所述输送单元内的被处理基板的回收、使在所述处理单元内和/或所述输送单元内的状态复原的处理。这样,与现有技术中的由操作人员用手动进行复原处理相比,可以大幅度节省复原处理的时间和工夫。此外,如所述的在处理单元内、输送单元内那样,通过根据被处理基板滞留处进行挽救处理,对应于被处理基板的处理阶段,可以正确地进行挽救处理。这样可以尽可能多地挽救被处理基板。In such the present invention, when the operation is stopped due to an abnormality in the operation of the substrate processing apparatus, the process of restoring the state of the substrate processing apparatus can be automatically performed, that is, the process of staying in the processing unit and/or the Recovery of the substrate to be processed in the transfer unit, and a process of restoring the state in the processing unit and/or in the transfer unit. In this way, compared with the manual restoration process performed by the operator in the prior art, the time and effort of the restoration process can be greatly saved. In addition, by carrying out the rescue treatment according to where the substrate to be processed stays as described above in the processing unit and the transport unit, the rescue treatment can be accurately performed in accordance with the processing stage of the substrate to be processed. This saves as much of the processed substrate as possible.
此外,所述基板处理装置包括在该基板处理装置的工作中存储被处理基板的处理履历信息的存储装置,所述处理单元内基板挽救处理根据存储在所述存储装置中的被处理基板的处理履历信息,检测滞留在所述处理单元内的被处理基板的处理阶段是否是剩余该被处理基板必须处理的处理阶段,根据该检测的结果,实施剩余的处理;此外,所述基板处理装置包括检测所述被处理基板的处理状态后进行缺陷检查的缺陷检查室,所述处理单元内基板挽救处理根据在所述缺陷检查室中检测出的被处理基板的处理状态,检测滞留在所述处理单元内的被处理基板的处理阶段是否是剩余该被处理基板必须要处理的处理阶段,根据该检测结果实施剩余的处理。这样,根据被处理基板的处理履历信息或在缺陷检查室的检查结果,通过实施被处理基板剩余的处理,可以设定该被处理基板最佳的剩余处理时间,所以可以正确地挽救被处理基板。In addition, the substrate processing apparatus includes storage means for storing processing history information of the substrate to be processed during operation of the substrate processing apparatus, and the substrate salvage process in the processing unit is based on the processing history information of the substrate to be processed stored in the storage means. History information, detecting whether the processing stage of the substrate to be processed staying in the processing unit is a processing stage that must be processed for the remaining substrate to be processed, and performing the remaining processing according to the detection result; in addition, the substrate processing device includes a defect inspection room for inspecting defects after detecting the processing state of the processed substrate, and the substrate salvage processing in the processing unit is based on the processing state of the processed substrate detected in the defect inspection room to detect Whether the processing stage of the substrate to be processed in the unit is the remaining processing stage that the substrate to be processed must be processed, the remaining processing is carried out according to the detection result. In this way, according to the processing history information of the processed substrate or the inspection results in the defect inspection room, by implementing the remaining processing of the processed substrate, the optimal remaining processing time for the processed substrate can be set, so the processed substrate can be accurately saved. .
此外,在所述装置内状态复原工序中,例如也可以实施所述基板处理装置的所述处理单元内和所述输送单元内的各室的清理处理。例如所述基板处理装置的所述处理单元和所述输送单元的各室具有至少可以导入吹扫气体的气体导入系统、通过抽真空和向大气开放的压力调整的排气系统,所述清理处理在所述处理单元和所述输送单元的各室内导入吹扫气体后,可以反复多次进行抽真空和向大气开放的处理。此外,被回收到所述基板收纳容器中的被处理基板检测被处理基板是否是未处理阶段,一旦检测出是未处理阶段,也可以具有对该被处理基板进行再处理的再处理工序。此外所述基板处理装置具有微粒测量室,在使所述被处理基板回收到所述基板收纳容器之前,输送到所述微粒测量室,在该微粒测量室进行所述被处理基板上的微粒量的测量,可以把该测量结果与所述被处理基板相对应,存储到存储装置中。In addition, in the step of restoring the state in the apparatus, for example, a cleaning process of each chamber in the processing unit and in the transfer unit of the substrate processing apparatus may be performed. For example, each chamber of the processing unit and the conveying unit of the substrate processing apparatus has a gas introduction system capable of introducing at least a purge gas, an exhaust system adjusted by vacuuming and opening to the atmosphere, and the cleaning process After the purge gas is introduced into each chamber of the processing unit and the conveying unit, the processes of vacuuming and opening to the atmosphere may be repeated multiple times. In addition, the substrate to be processed collected in the substrate storage container may detect whether the substrate to be processed is in an unprocessed stage, and once it is detected to be an unprocessed stage, there may be a reprocessing step of reprocessing the substrate to be processed. In addition, the substrate processing apparatus has a particle measurement chamber, and the substrate to be processed is transported to the particle measurement chamber before being returned to the substrate storage container, and the amount of particles on the substrate to be processed is measured in the particle measurement chamber. The measurement results can be stored in the storage device corresponding to the processed substrates.
为了解决所述课题,在本发明的另一方面中,可以提供一种基板处理装置的复原处理方法,是在基板处理装置中,在由于该基板处理装置的工作中产生异常而使工作停止时,在该异常解除后使所述基板处理装置的状态复原的基板处理装置的复原处理方法,而且,所述基板处理装置包括:输送单元,在与收纳被处理基板的放置基板处理容器之间具有进行所述被处理基板的交接的输送室;处理单元,具有将处理所述被处理基板的多个处理室连接在周围的共用输送室以及连接该共用输送室和所述输送单元的输送室的负载锁定室;输送单元侧输送机构,被设置在所述输送单元内,将所述被处理基板向所述负载锁定室送入和取出;和处理单元侧输送机构,被设置在所述处理单元的共用输送室内,将所述被处理基板在所述负载锁定室和所述各处理室之间送入和取出,其中,所述基板处理装置的复原处理方法包括:基板回收工序,对于滞留在所述基板处理装置的所述处理单元和/或所述输送单元的各室内的所述被处理基板,对应于直到所述工作停止时已实施的处理的阶段,进行基板挽救处理,通过所述处理单元侧输送机构和/或所述输送单元侧输送机构,将所述被处理基板向所述基板收纳容器回收;和装置内状态复原工序,使所述基板处理装置的各室内的状态复原。In order to solve the above-mentioned problems, in another aspect of the present invention, there can be provided a method for recovering a substrate processing apparatus, in which, when an abnormality occurs in the operation of the substrate processing apparatus, the operation is stopped. , the method for restoring the substrate processing apparatus to restore the state of the substrate processing apparatus after the abnormality is resolved, and the substrate processing apparatus includes: a conveying unit having a a transfer chamber for transferring the substrate to be processed; a processing unit having a common transfer chamber connecting a plurality of processing chambers for processing the substrate to be processed; and a transfer chamber connecting the common transfer chamber and the transfer unit a load lock chamber; a transfer unit side transfer mechanism provided in the transfer unit for carrying the substrate to be processed into and out of the load lock chamber; and a processing unit side transfer mechanism provided in the processing unit The substrate to be processed is transported into and taken out between the load lock chamber and each of the processing chambers in a common transfer chamber, wherein the recovery processing method of the substrate processing apparatus includes: a substrate recovery process, for The substrate to be processed in each chamber of the processing unit and/or the transfer unit of the substrate processing apparatus is subjected to a substrate salvage process corresponding to a stage of processing that has been performed until the operation is stopped, by the The processing unit-side conveying mechanism and/or the conveying unit-side conveying mechanism collects the substrate to be processed into the substrate storage container; and the state restoration step in the apparatus restores the state of each chamber of the substrate processing apparatus.
这种情况下,所述基板回收工序若在所述输送单元中检测出被处理基板,则实施向所述基板收纳容器回收的输送单元内的基板挽救处理,若在负载锁定室内检测出被处理基板,则进行该负载锁定室的排气处理后,实施对该被处理基板进行向所述基板收纳容器回收的负载锁定室内的基板挽救处理,若在所述共用输送室检测出被处理基板,就判断该被处理基板的处理阶段是否是未完成处理的阶段,如果是未完成处理的阶段,则实施在剩余的处理室的处理后向所述基板收纳容器回收,如果不是未完成处理的阶段,就实施向所述基板收纳容器回收的共用输送室内的基板挽救处理,若在所述处理室检测出被处理基板,则判断该被处理基板的处理阶段是否是处理中途的阶段,如是处理中途的阶段,就实施在该处理室的剩余的处理后,向所述基板收纳容器回收,如不是处理中途的阶段,就可以实施向所述基板收纳容器回收的处理室内的基板挽救处理。In this case, if a substrate to be processed is detected in the transfer unit in the substrate recovery step, a substrate rescue process in the transfer unit that is recovered to the substrate storage container is performed, and if a processed substrate is detected in the load lock chamber For the substrate, after the exhaust process of the load lock chamber is performed, the substrate rescue process is carried out in the load lock chamber where the substrate to be processed is recovered to the substrate storage container. If the substrate to be processed is detected in the common transfer chamber, It is judged whether the processing stage of the substrate to be processed is the stage of unfinished processing, if it is the stage of unfinished processing, then carry out the processing in the remaining processing chambers and then recover it to the substrate storage container, if it is not the stage of unfinished processing For implementing the substrate rescue process in the common transfer chamber recovered to the substrate storage container, if a substrate to be processed is detected in the processing chamber, it is determined whether the processing stage of the substrate to be processed is in the middle of processing, and if it is in the middle of processing If it is not in the middle of the process, the substrate salvage process in the processing chamber recovered to the substrate storage container can be performed.
如采用本发明,在由于基板处理装置的工作中产生异常而工作停止时,可以自动进行使基板处理装置的状态复原的处理,也就是可以自动进行滞留在处理单元和/或所述输送单元的各室内的被处理基板的回收、使在处理单元和/或所述输送单元的各室内的状态复原的处理。这样与现在操作人员用手动进行复原处理相比,可以大幅度节省复原处理的时间和工夫。此外象所说的在输送单元内的基板挽救处理、负载锁定室内的基板挽救处理、共用输送室内的基板挽救处理、处理室内的基板挽救处理那样,通过根据被处理基板滞留的地方进行挽救处理,对应于被处理基板的处理阶段,可以正确地进行挽救处理。这样,可以尽可能多地挽救被处理基板。According to the present invention, when the operation of the substrate processing apparatus is stopped due to an abnormality in the operation, the process of restoring the state of the substrate processing apparatus can be automatically performed, that is, the process of staying in the processing unit and/or the transfer unit can be automatically performed. Recovering of substrates to be processed in each chamber, and recovery of the state in each chamber of the processing unit and/or the transfer unit. In this way, compared with the manual recovery process performed by the operator at present, the time and effort of the recovery process can be greatly saved. In addition, by carrying out the rescue processing according to where the substrates to be processed stay, such as the substrate rescue processing in the transfer unit, the substrate rescue processing in the load lock chamber, the substrate rescue processing in the common transfer chamber, and the substrate rescue processing in the processing chamber, Rescue processing can be performed correctly according to the processing stage of the substrate to be processed. In this way, as many processed substrates as possible can be salvaged.
此外,所述基板处理装置具有在该基板处理装置的工作中存储被处理基板的处理履历信息的存储装置,所述处理室内基板挽救处理在判断所述处理室内的被处理基板的处理阶段是处理中途的阶段的情况下,根据存储在所述存储装置中的被处理基板的处理履历信息,设定该被处理基板的剩余处理时间,可以对此处理基板只实施此剩余时间的剩余处理,此外所述基板处理装置具有检测所述被处理基板的处理状态后进行缺陷检查的缺陷检查室,所述处理室内的基板挽救处理在判断所述处理室内的被处理基板的处理阶段是处理中途的阶段的情况下,把该被处理基板向所述缺陷检查室输送,在该缺陷检查室中根据被检测了的被处理基板的处理状态,设定该被处理基板的剩余处理时间,可以对该被处理基板只进行此剩余时间的剩余处理。这样根据被处理基板的处理履历信息或在缺陷检查室的检查结果,通过实施被处理基板剩余的处理,可以设定该被处理基板最佳的剩余处理时间,所以可以正确地挽救被处理基板。In addition, the substrate processing apparatus has a storage device for storing processing history information of the substrate to be processed during operation of the substrate processing apparatus, and the substrate salvage processing in the processing chamber is determined to be processing at a stage of processing the substrate to be processed in the processing chamber. In the case of an intermediate stage, the remaining processing time of the substrate to be processed is set based on the processing history information of the substrate to be processed stored in the storage device, and only the remaining processing of the remaining time can be performed on the substrate to be processed. The substrate processing apparatus has a defect inspection room that detects a processing state of the substrate to be processed and then inspects a defect, and the substrate salvage process in the processing chamber is determined to be in the middle of processing the substrate to be processed in the processing chamber. In this case, the substrate to be processed is transported to the defect inspection chamber, and the remaining processing time of the substrate to be processed is set in the defect inspection chamber according to the processing state of the substrate to be processed, so that the substrate to be processed can be Process the substrate for the remainder of this remaining time only. In this way, by performing the remaining processing of the substrate to be processed based on the processing history information of the substrate to be processed or the inspection results in the defect inspection room, the optimal remaining processing time of the substrate to be processed can be set, so that the substrate to be processed can be saved accurately.
此外,在所述装置内状态复原工序中,也可以实施所述基板处理装置的所述处理单元内和所述输送单元的各室内的清理处理。此外,所述基板处理装置的所述处理单元和所述输送单元的各室具有至少可以导入吹扫气体的气体导入系统、通过抽真空和相大气开放的压力调整的排气系统,所述清理处理可以在所述处理单元和所述输送单元的各室内导入吹扫气体后,可以反复多次进行抽真空和向大气开放的处理。此外被回收到所述基板收纳容器中的被处理基板检测被处理基板是否是未处理阶段,若检测出是未处理阶段,则也可以具有对该被处理基板进行再处理的再处理工序。此外,所述基板处理装置具有微粒测量室,在使所述被处理基板回收工序到把所述被处理基板回收到基板收纳容器之前,输送到所述微粒测量室,在该微粒测量室进行所述被处理基板上的微粒量的测量,可以把该测量结果与所述被处理基板相对应,存储到存储装置中。In addition, in the step of restoring the state in the apparatus, a cleaning process may be performed in the processing unit of the substrate processing apparatus and each chamber of the transfer unit. In addition, each chamber of the processing unit and the transfer unit of the substrate processing apparatus has a gas introduction system capable of introducing at least a purge gas, an exhaust system adjusted by vacuuming and pressure opening to the atmosphere, and the cleaning For the treatment, after the purge gas is introduced into each chamber of the treatment unit and the transfer unit, the treatment of vacuuming and opening to the atmosphere may be repeated multiple times. In addition, the substrate to be processed collected in the substrate storage container may detect whether the substrate to be processed is an unprocessed stage, and if it is detected to be an unprocessed stage, there may be a reprocessing step of reprocessing the substrate to be processed. In addition, the substrate processing apparatus has a particle measurement chamber to which the processed substrate is transported before the process of recovering the processed substrate to the substrate storage container, and the particle measurement chamber performs the particle measurement in the particle measurement chamber. For the measurement of the amount of particles on the substrate to be processed, the measurement result may be stored in a storage device corresponding to the substrate to be processed.
为了解决所述课题,在本发明另一方面中,提供一种处理被处理基板的基板处理装置,其特征在于,包括:处理单元,由至少包括处理所述被处理基板的多个处理室的多个室所构成;输送单元,被连接在所述处理单元上,具有在与收纳所述被处理基板的基板收纳容器之间,进行所述被处理基板的交接的输送室;输送单元侧输送机构,被设置在所述输送单元内,将所述被处理基板向所述处理单元送入和取出;处理单元侧输送机构,被设置在所述处理单元内,将所述被处理基板向所述处理室送入和取出;和控制装置,由于所述基板处理装置的工作中产生异常工作停止时,在该异常解除后复原所述基板处理装置的状态,其中,所述控制装置包括:基板回收装置,对于滞留在所述基板处理装置的所述处理单元内和/或所述输送单元内的所述被处理基板,对应于直到所述工作停止时实施的处理的阶段进行基板挽救处理,通过所述处理单元侧输送机构和/或所述输送单元侧输送机构,将所述被处理基板向所述基板收纳容器回收;和装置内状态复原装置,将所述基板处理装置的所述处理单元内和所述输送单元内的状态复原。In order to solve the above problems, in another aspect of the present invention, there is provided a substrate processing apparatus for processing a substrate to be processed, which is characterized in that it includes: a processing unit comprising at least a plurality of processing chambers for processing the substrate to be processed Consisting of a plurality of chambers; a conveying unit connected to the processing unit, having a conveying chamber for transferring the substrate to be processed between the substrate storage container storing the substrate to be processed; the conveying unit side conveying The mechanism is arranged in the conveying unit, and the substrate to be processed is sent into and taken out from the processing unit; the conveying mechanism on the processing unit side is arranged in the processing unit, and the substrate to be processed is sent to the processing unit. The processing chamber is fed into and taken out; and the control device, when the operation is stopped due to an abnormality in the operation of the substrate processing device, restores the state of the substrate processing device after the abnormality is resolved, wherein the control device includes: a substrate a recovering device that performs a substrate salvage process corresponding to the stage of the process performed until the stop of the operation for the substrate to be processed remaining in the processing unit and/or in the transport unit of the substrate processing apparatus, The processing unit-side conveying mechanism and/or the conveying unit-side conveying mechanism collects the substrate to be processed into the substrate storage container; The state within the unit and within the delivery unit is restored.
在这样的本发明中,在由于基板处理装置的工作中产生异常而工作停止时,使基板处理装置的状态复原的处理可以自动进行,也就是滞留在所述处理单元内和/或所述输送单元内的被处理基板的回收、处理单元内和/或所述输送单元内的状态复原的处理可以自动进行。这样与现在操作人员用手动进行复原处理相比,可以大幅度节省复原处理的时间和工夫。此外通过对应于被处理基板的处理阶段,进行相应的正确的挽救处理,可以尽可能多地挽救被处理基板。In such the present invention, when the operation is stopped due to an abnormality in the operation of the substrate processing apparatus, the process of restoring the state of the substrate processing apparatus can be automatically performed, that is, staying in the processing unit and/or the conveyance The recovery of the processed substrates in the unit, the process of restoring the state in the processing unit and/or in the transfer unit can be performed automatically. In this way, compared with the manual recovery process performed by the operator at present, the time and effort of the recovery process can be greatly saved. In addition, by performing the corresponding correct rescue treatment corresponding to the processing stage of the processed substrate, as many processed substrates as possible can be saved.
为了解决所述课题,在本发明的另一方面中,提供一种处理被处理基板的基板处理装置,其特征在于,包括:输送单元,在与收纳所述被处理基板的基板收纳容器之间具有进行所述被处理基板的交接的输送室;处理单元,具有将处理所述被处理基板的多个处理室连接在周围的共用输送室以及连接该共用输送室和所述输送单元的输送室的负载锁定室;输送单元侧输送机构,被设置在所述输送单元的输送室内,将所述被处理基板向所述负载锁定室送入和取出;处理单元侧输送机构,被设置在所述处理单元的共用输送室内,将所述被处理基板在所述负载锁定室和所述各处理室的各室之间送入和取出;和控制装置,在该基板处理装置的工作中产生异常工作停止时,在该异常解除后使所述基板处理装置的状态复原,其中,所述控制装置包括:基板回收装置,对于滞留在所述基板处理装置的所述处理单元内和/或所述输送单元的各室内的所述被处理基板,对应于直到所述工作停止时实施的处理的阶段进行基板挽救处理,通过所述处理单元侧输送机构和/或所述输送单元侧输送机构,将所述被处理基板向所述基板收纳容器回收;装置内状态复原装置,将所述基板处理装置的各室内的状态复原。In order to solve the above-mentioned problems, in another aspect of the present invention, there is provided a substrate processing apparatus for processing a substrate to be processed, which is characterized in that it includes: a transfer chamber for transferring the substrate to be processed; a processing unit including a common transfer chamber connecting a plurality of processing chambers for processing the substrate to be processed; and a transfer chamber connecting the common transfer chamber and the transfer unit The load lock chamber of the transport unit side; the transport mechanism on the transport unit side is arranged in the transport chamber of the transport unit, and sends the substrate to be processed into and out of the load lock chamber; the transport unit side transport mechanism is set in the transport chamber a common transfer chamber of a processing unit for carrying in and out the substrate to be processed between the load lock chamber and each of the processing chambers; and a control device for generating an abnormal operation during operation of the substrate processing apparatus When stopping, the state of the substrate processing apparatus is restored after the abnormality is resolved, wherein the control device includes: a substrate recovering device for staying in the processing unit of the substrate processing apparatus and/or the conveying The substrates to be processed in each chamber of the unit are subjected to a substrate rescue process corresponding to the stage of the process until the operation is stopped, and the substrates are transported by the processing unit side transport mechanism and/or the transport unit side transport mechanism The substrate to be processed is recovered to the substrate storage container; and the state recovery device in the device restores the state of each chamber of the substrate processing device.
在这样的本发明中,在由于基板处理装置的工作中产生异常而工作停止时,使基板处理装置的状态复原的处理可以自动进行,也就是滞留在所述处理单元和/或所述输送单元的各室内的被处理基板的回收、处理单元和/或所述输送单元的各室内的状态复原的处理可以自动进行。这样与现在操作人员用手动进行复原处理相比,可以大幅度节省复原处理的时间和工夫。此外通过对应于被处理基板的处理阶段,进行正确的挽救处理,可以尽可能多地挽救被处理基板。In such the present invention, when the operation is stopped due to an abnormality in the operation of the substrate processing apparatus, the process of restoring the state of the substrate processing apparatus can be automatically performed, that is, the substrate processing apparatus stays in the processing unit and/or the transfer unit. The recovery of the substrates to be processed in each chamber and the state restoration of each chamber of the processing unit and/or the transport unit can be performed automatically. In this way, compared with the manual recovery process performed by the operator at present, the time and effort of the recovery process can be greatly saved. In addition, by performing correct rescue treatment corresponding to the processing stage of the processed substrate, as many processed substrates as possible can be rescued.
为了解决所述课题,在本发明另一方面中,提供一种程序,一种在由至少包括对从基板收纳容器输送来的被处理基板进行处理的处理室的多各室构成的基板处理装置中,在由于该基板处理装置的工作中产生异常而工作停止时,在该异常解除后进行使所述基板处理装置的状态复原的基板处理装置的复原处理的程序,其中,在计算机中,实施下述处理:基板回收处理,对于滞留在所述基板处理装置的各室内的所述被处理基板,对应于直到所述工作停止时实施的处理的阶段,进行基板挽救处理,将所述被处理基板向所述基板收纳容器回收;和装置内状态复原处理,使所述基板处理装置的各室内的状态复原。In order to solve the above-mentioned problems, in another aspect of the present invention, there is provided a program, a substrate processing apparatus comprising a plurality of chambers including at least a processing chamber for processing a substrate transported from a substrate storage container. In the present invention, when the operation is stopped due to an abnormality in the operation of the substrate processing apparatus, a program for restoring the substrate processing apparatus to restore the state of the substrate processing apparatus is performed after the abnormality is resolved, wherein, in the computer, the The following processing: substrate recovery processing, for the substrate to be processed remaining in each chamber of the substrate processing apparatus, performing substrate salvage processing corresponding to the stage of processing until the operation is stopped, and retrieving the processed substrate The substrate is collected in the substrate storage container; and the state restoration process in the apparatus restores the state of each chamber of the substrate processing apparatus.
此外,所述基板挽救处理例如有基板检测处理,检测出滞留在所述基板处理装置内的所述被处理基板;处理阶段检测处理,对于用所述基板检测处理检测出的被处理基板,检测直到所述工作停止时实施的处理的阶段;基板挽救处理,对于用所述基板检测处理检测出的被处理基板,对应于用所述处理阶段检测处理检测出的处理阶段,实施基板挽救处理。In addition, the substrate salvage processing includes, for example, substrate detection processing, which detects the processed substrates staying in the substrate processing apparatus; processing stage detection processing, which detects the processed substrates detected by the substrate detection processing. The stage of processing performed up to the stop of the operation; the substrate salvage processing is performed on the substrate to be processed detected by the substrate detection processing corresponding to the processing stage detected by the processing stage detection processing.
在这样的本发明中,因基板处理装置的工作中产生异常造成工作停止时,使基板处理装置的状态复原的处理可以通过计算机自动进行,也就是滞留在基板处理装置内的被处理基板的回收和使基板处理装置内的状态复原的处理可以通过计算机自动进行。这样与现在操作人员用手动进行复原处理相比,可以大幅度节省复原处理的时间和工夫。此外对于滞留在基板处理装置内的被处理基板,对应于直到因基板处理装置的异常造成工作停止时实施的处理阶段,进行相应的正确的挽救处理,可以尽可能多地挽救被处理基板。In such the present invention, when the operation is stopped due to an abnormality in the operation of the substrate processing apparatus, the process of restoring the state of the substrate processing apparatus can be automatically performed by the computer, that is, the recovery of the substrate to be processed remaining in the substrate processing apparatus And the process of restoring the state in the substrate processing apparatus can be automatically performed by a computer. In this way, compared with the manual recovery process performed by the operator at present, the time and effort of the recovery process can be greatly saved. In addition, for the substrates to be processed staying in the substrate processing apparatus, corresponding correct rescue treatment is performed according to the processing stage until the operation is stopped due to the abnormality of the substrate processing apparatus, and as many substrates to be processed as possible can be saved.
发明效果:Invention effect:
在本发明中,因基板处理装置的工作中产生异常造成工作停止时,通过自动进行使基板处理装置的状态复原的处理,可以节省复原处理的时间和工夫。此外,对于滞留在基板处理装置内的被处理基板,对应于直到因基板处理装置的异常造成工作停止时实施的处理阶段,进行相应的正确的挽救处理,可以尽可能多地挽救被处理基板。In the present invention, when the operation is stopped due to an abnormality in the operation of the substrate processing apparatus, the process of restoring the state of the substrate processing apparatus is automatically performed, thereby saving time and labor for restoration processing. In addition, for the substrates to be processed staying in the substrate processing apparatus, according to the processing stage until the operation is stopped due to the abnormality of the substrate processing apparatus, appropriate rescue treatment is performed accordingly, and as many substrates to be processed as possible can be rescued.
附图说明 Description of drawings
图1是表示本发明实施方式的基板处理装置结构的截面图。FIG. 1 is a cross-sectional view showing the structure of a substrate processing apparatus according to an embodiment of the present invention.
图2是表示图1所示控制部的构成例的框图。FIG. 2 is a block diagram showing a configuration example of a control unit shown in FIG. 1 .
图3是表示图2所示晶片收容信息的具体例的图。FIG. 3 is a diagram showing a specific example of the wafer storage information shown in FIG. 2 .
图4是表示图2所示晶片处理履历信息的具体例的图。FIG. 4 is a diagram showing a specific example of the wafer processing history information shown in FIG. 2 .
图5是表示同一个实施方式的复原处理的具体例的流程图。FIG. 5 is a flowchart showing a specific example of restoration processing in the embodiment.
图6是表示图5所示的输送单元内的晶片挽救处理的具体例的流程图。FIG. 6 is a flowchart showing a specific example of wafer salvage processing in the transfer unit shown in FIG. 5 .
图7是表示图5所示的负载锁定室内的晶片挽救处理的具体例的流程图。FIG. 7 is a flowchart showing a specific example of wafer salvage processing in the load lock chamber shown in FIG. 5 .
图8是表示图5所示的共用输送室内的晶片挽救处理的具体例的流程图。FIG. 8 is a flowchart showing a specific example of wafer salvage processing in the common transfer chamber shown in FIG. 5 .
图9是表示图8所示的对处理没有完成的晶片的处理的具体例的流程图。FIG. 9 is a flowchart showing a specific example of the processing of the unprocessed wafer shown in FIG. 8 .
图10是表示图5所示的处理室内的晶片挽救处理的具体例的流程图。FIG. 10 is a flowchart showing a specific example of wafer salvage processing in the processing chamber shown in FIG. 5 .
图11是表示图10所示的对处理中途的晶片的处理的具体例的流程图。FIG. 11 is a flowchart showing a specific example of processing for a wafer in process shown in FIG. 10 .
图12是表示晶片的处理工序的图,此图(a)是表示在处理室内的稳定工序中途基板处理装置停止工作的情况的图,此图(b)是表示在处理室内的稳定工序中途基板处理装置停止工作的情况下的晶片W的剩余处理的图。Fig. 12 is a diagram showing the processing steps of the wafer, in which (a) is a diagram showing a state in which the substrate processing apparatus is stopped in the middle of the stabilization process in the processing chamber, and (b) is a diagram showing a substrate in the middle of the stabilization process in the processing chamber A diagram of the remaining processing of the wafer W with the processing apparatus stopped.
图13是表示晶片的处理工序的图,此图(a)是表示在处理室内的蚀刻工序中途基板处理装置停止工作的情况的图,此图(b)是表示在处理室内的蚀刻工序中途基板处理装置停止工作的情况下的晶片W的剩余处理的图。Fig. 13 is a diagram showing the processing steps of the wafer, in which (a) is a diagram showing a state in which the substrate processing apparatus is stopped in the middle of the etching process in the processing chamber, and (b) is a diagram showing a substrate in the middle of the etching process in the processing chamber A diagram of the remaining processing of the wafer W with the processing apparatus stopped.
图14是表示晶片的处理工序的图,此图(a)是表示在处理室内的结束工序中途基板处理装置停止工作的情况的图,此图(b)是表示在处理室内的结束工序中途基板处理装置停止工作的情况下的晶片W的剩余处理的图。Fig. 14 is a diagram showing the processing steps of the wafer, in which (a) is a diagram showing a state in which the substrate processing apparatus is stopped in the middle of the finishing process in the processing chamber, and (b) is a diagram showing a substrate in the middle of the finishing process in the processing chamber A diagram of the remaining processing of the wafer W with the processing apparatus stopped.
标号说明Label description
100基板处理装置100 substrate processing device
110处理单元110 processing units
120输送单元120 delivery unit
130输送室130 conveying room
131(131A~131C)盒台131 (131A~131C) boxes
132(132A~132C)盒容器132 (132A~132C) box containers
133(133A~133C)闸阀133 (133A~133C) gate valve
134微粒测量室134 particle measurement room
135载物台135 stage
135a晶片传感器135a chip sensor
136定位器136 Locator
138旋转载物台138 rotating stage
138a晶片传感器138a chip sensor
139光学传感器139 optical sensors
140(140A~140F)处理室140 (140A~140F) treatment room
142(142A~142F)载物台142 (142A~142F) stage
144(144A~144F)闸阀144 (144A~144F) gate valve
150共用输送室150 shared conveying room
164M、164N交接台164M, 164N handover station
165M、165N晶片传感器165M, 165N chip sensor
170输送单元侧输送机构170 conveying unit side conveying mechanism
172基座172 base
173a、173b晶片传感器173a, 173b wafer sensor
173A、173B拾取器173A, 173B Pickup
174导轨174 guide rail
176线性电动机驱动机构176 linear motor drive mechanism
180处理单元侧输送机构180 processing unit side conveying mechanism
182基座182 base
183a、183b晶片传感器183a, 183b wafer sensor
183A、183B拾取器183A, 183B pickup
184导轨184 guide rail
186臂机构186 arm mechanism
188(188A~188F)晶片传感器188 (188A~188F) chip sensor
189位置传感器189 position sensor
200控制部200 Control Department
210CPU210CPU
220ROM220ROM
230RAM230RAM
240计时装置240 timing device
250显示装置250 display devices
260输入输出装置260 input and output device
270通报装置270 notification device
280各种控制器280 various controllers
290存储装置290 storage devices
292晶片收容信息292 chip containment information
194晶片处理履历信息194 wafer processing history information
具体实施方式 Detailed ways
下面,参照附图对本发明的优选实施方式进行详细说明。在本说明书和附图中,对实际具有相同功能结构的构成要素,标注同一符号,并省略重复的说明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In this specification and the drawings, the same reference numerals are attached to components that actually have the same functional structure, and repeated descriptions are omitted.
(基板处理装置的构成例)(Example of configuration of substrate processing equipment)
首先,参照附图对本发明的实施方式的基板处理装置进行说明。图1是表示本发明的实施方式的基板处理装置的简要结构的图。该基板处理装置100包括:对被处理基板例如对半导体晶片(下面均简称为“晶片”)W进行成膜处理、蚀刻处理等各种处理的多个处理单元110,以及将晶片W向该处理单元110送入或者取出的输送单元120。First, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. The
首先,对输送单元120的构成例进行说明。如图1所示,输送单元120具有在基板收纳容器例如后面叙述的盒容器132(132A~132C)和处理单元110之间,送入或者取出晶片的输送室130。输送室130形成为截面大体呈多角形的箱体形状。构成输送室130上的截面大体为多角形的长边的一个侧面上,并列设置有多个盒台131(131A~131C)。这些盒台131A~131C构成为可以分别放置作为基板收纳容器的一个例子的盒容器132A~132C。First, a configuration example of the
在各盒容器132(132A~132C)中,例如可以等间隔地多层放置并收容有最多25块晶片W,内部成为由N2气体氛围充满的密封结构。输送室130构成为能够通过闸阀133(133A~133C)向内部送入和取出晶片W。此外,盒台131和盒容器132的数量并不限定于图1所示的情况。In each of the cassette containers 132 ( 132A to 132C ), for example, a maximum of 25 wafers W can be accommodated in multiple layers at equal intervals, and the inside has a sealed structure filled with N 2 gas atmosphere. The
在所述输送室130一个侧面上配置有微粒测量室(Particle Monitor)134。微粒测量室134具有放置晶片W的载物台135,构成为可以测量附着于放置在该载物台135上的晶片W上的附着物等微粒量。其中,微粒测量室134内的结构可以使用众所周知的结构,这里省略了对该结构的详细说明。在微粒测量室134的载物台135上配置有可以检测晶片W是否放置在载物台135上的晶片传感器135a。晶片传感器135a例如可以由众所周知的拾波传感器(pickup sensor)构成。A particle monitor (Particle Monitor) 134 is arranged on one side of the
在通过这样的微粒测量室134测量晶片W上的微粒量时,例如可以通过输送单元侧输送机构170将想要测量微粒量的晶片W送入微粒测量室134,直接对附着在该晶片W上的微粒量进行测量。根据该微粒量的测量结果,判断是否是可以再处理的晶片W。When measuring the amount of particles on the wafer W using such a
此外,在测量输送单元120、共用输送室150、负载锁定室160M、160N、各处理室140A~140F等各室内的微粒量时,可以通过区别于进行晶片处理的晶片的、另外的微粒测量用晶片进行测量。具体地说,例如假设在盒容器132C中收纳有微粒测量用晶片,将微粒测量用晶片从盒容器132C暂时送到要测量微粒量的室,等待经过规定的时间。然后,在经过规定时间后,使微粒测量用晶片返回到微粒测量室134,在微粒测量室134内对附着在微粒测量用晶片上的微粒量进行测量。In addition, when measuring the amount of particles in each chamber, such as the
后面叙述的控制部200连接在微粒测量室134上,测量后的微粒量等测量结果被发送到控制部200,例如作为记录被存储在设置于控制部200内的存储装置290和存储器等中。The
在所述输送室130的端部、即构成截面大体呈多角形的短边的一个侧面上,设置有作为在内部具有旋转载物台138和对晶片W的周边部位进行光学检测的光学传感器139的定位器(予定位载物台)136。通过该定位器136例如检测晶片W的定位平面和缺口等并进行定位。在旋转载物台138上配置有可以检测在该旋转载物台138上是否放置晶片W的晶片传感器138a。晶片传感器138a例如由众所周知的拾波传感器构成。At the end of the
在所述输送室130内设置有沿长度方向(图1所示的箭头方向)输送晶片W的输送单元侧输送机构(输送室内输送机构)170。固定输送单元侧输送机构170的基座172可滑动地被支撑在沿着长度方向设置在输送室130内的导轨174上。在该基座172和导轨174上分别设置有线性电动机的可动部件和固定部件。在导轨174的端部设置有用于驱动该线性电动机的线性电动机驱动机构176。控制部200连接在线性电动机驱动机构176上。因此,根据来自控制部200的控制信号,线性电动机驱动机构176驱动,使得输送单元侧输送机构170与基座172一起沿着导轨174向箭头方向移动。Inside the
输送单元侧输送机构170由具有两个拾取器(pick)173A、173B的双臂机构构成,可以一次取两块晶片。因此,例如在向盒容器132、定位器136、各负载锁定室160M、160N等送入或者取出晶片时,能够以交换晶片的方式送入或者取出。在输送单元侧输送机构170的拾取器173A、173B上分别设置有可以检测是否夹持住晶片W的晶片传感器173a、173b。晶片传感器173a、173b可以分别例如由众所周知的拾波传感器构成。其中,处理单元侧输送机构180的拾取器的个数不限定于所述的情况,例如也可以是只有一个拾取器的单臂机构。The
下面,对处理单元110的构成例进行说明。例如在组合台型的基板处理装置的情况下,如图1所示,处理单元110构成为在形成矩形(例如六角形)的共用输送室150的周围,气密性连接有对晶片W例如实施成膜处理(例如等离子体CVD处理)和蚀刻处理(例如等离子体蚀刻处理)等规定处理的多个处理室140(第一~第六处理室140A~140F)、以及负载锁定室160M、160N。Next, a configuration example of the
各处理室140A~140F对晶片W例如实施同种处理或不同种处理。在各处理室140(140A~140F)内分别设置有用于放置晶片W的载物台142(142A~142F)。其中,处理室140的个数不是限定于图1所示的情况。Each of the
在各处理室140A~140F中,根据表示预先存储在控制部200的存储装置290等中的处理工序等的处理方法等的晶片处理信息,在各处理室140A~140F实施规定的处理。晶片处理信息因晶片的处理种类和条件而不同。作为在晶片W上实施工序处理,例如实施蚀刻处理的情况下的晶片的处理信息,例举了图12所示的处理工序。In each of the
图12所示的处理工序由稳定工序、蚀刻工序(处理工序)、结束工序构成。其中所谓的稳定工序是后续的蚀刻处理工序中,为了对晶片W实施蚀刻处理,调整处理室140内的状态的工序。在稳定工序中,例如包括在将晶片W放置在载物台142上后进行的处理室140内的抽真空的工序;导入规定的处理气体的工序;等离子体化工序,在兼作载物台142用的下部电极等的电极上施加规定的高频电,进行等离子体化,使此等离子体状态稳定。所谓蚀刻处理工序是在所述等离子体状态中进行规定时间的蚀刻处理的工序。所谓结束工序是调整在刚刚的蚀刻工序中的实施蚀刻处理后的处理室140内的状态的工序。在此结束工序中,例如包括使刚才的蚀刻处理工序中的蚀刻处理在终点结束的终点工序。此外这样的晶片W的处理工序不是限定为本具体的例子。The processing steps shown in FIG. 12 are composed of a stabilization step, an etching step (processing step), and a finishing step. Here, the so-called stabilizing step is a step of adjusting the state in the processing chamber 140 in order to perform etching processing on the wafer W in the subsequent etching processing step. The stabilizing step includes, for example, a step of vacuuming the processing chamber 140 after placing the wafer W on the stage 142; a step of introducing a predetermined processing gas; Apply a predetermined high-frequency electric current to the electrodes such as the lower electrode used to make plasma, and stabilize the plasma state. The etching treatment step is a step of performing an etching treatment for a predetermined time in the plasma state. The finishing step is a step of adjusting the state of the inside of the processing chamber 140 after performing the etching process in the immediate etching step. In this end step, for example, an end step of terminating the etching process in the previous etching step at the end point is included. In addition, the processing steps of such a wafer W are not limited to this specific example.
所述共用输送室150具有在所述的各处理室140A~140F之间或各处理室140A~140F和各第一、第二负载锁定室160M、160N之间、将晶片W送入或者取出的功能。共用输送室150形成为多角形(例如六角形),各处理室140(140A~140F)分别通过闸门144(144A~144F)连接在其周围,同时第一、第二负载锁定室160M、160N的前端分别通过闸门(真空一侧闸门)154M、154N连接在其周围。第一、第二负载锁定室160M、160N的底端分别通过闸门(大气一侧闸门)162M、162N而连接在构成输送室130上的截面大体为多角形的长边的另一个侧面上。The
第一、第二负载锁定室160M、160N具有临时保存晶片W而调整压力后,通向下一阶段的功能。在各第一、第二负载锁定室160M、160N内部分别设置可以放置晶片W的交接台164M、164N。在此交接台164M、164N上设置有可以检测是否把晶片W放置在此交接台164M、164N上的晶片传感器165M、165N。晶片传感器165M、165N例如分别由众所周知的拾波传感器构成。The first and second
第一、第二负载锁定室160M、160N构成为可以吹扫残留物等的微粒和真空排气。具体地说,第一、第二负载锁定室160M、160N分别设置有排气系统,将干燥泵等的真空泵连接在例如具有排气阀(排气控制阀)的排气管;和气体导入系统,将气体导入源连接在具有吹扫阀(吹扫气体控制阀)的气体导入管上。这样的吹扫阀通过控制排气阀等,来进行通过反复导入吹扫气体的抽真空和向大气开放的清理处理和排气处理。The first and second
此外,所述共用输送室150和各处理室140A~140F也可以构成为能够吹扫残留物等微粒和真空排气。例如,在所述共用输送室150中,配置有上述那样的导入吹扫气体的气体导入系统和可以抽真空的排气系统,在各处理室140A~140F中,配置有也可以导入除了所述吹扫气体以外的处理气体的气体导入系统和可以抽真空的排气系统。In addition, the
在这样的处理单元110中,如上述那样,在共用输送室150和各处理室140A~140F之间以及共用输送室150和所述各负载锁定室160M、160N之间分别可开闭地构成气密状态,成为组合台,根据需要可以连通共用输送室150内。此外,在所述第一、第二负载锁定室160M、160N和所述输送室130之间,也可以分别可开闭地构成气密状态。In such a
在共用输送室150内设置有例如由结构上可以弯曲、升降、旋转的多关节臂构成的处理单元侧输送机构(共用输送室内输送机构)180。该处理单元侧输送机构180被支撑在基座182上,可以自由旋转。基座182构成为在从共用输送室150内的底端一侧直到前端一侧配置的导轨184上、例如通过臂机构186可以自由滑动。若采用这样构成的处理单元侧输送机构180,则通过使该处理单元侧输送机构180沿导轨184滑动,而可以在各负载锁定室160M、160N和各处理室140A~140F中进行存取。In the
例如使处理单元侧输送机构180在与各负载锁定室160M、160N以及相面对配置的处理室140A、140F进行存取时,使处理单元侧输送机构180沿导轨184位于靠近共用输送室150的底端一侧。此外,使处理单元侧输送机构180在处理室140B~140E中进行存取时,使处理单元侧输送机构180沿导轨184位于靠近共用输送室150的前端一侧。因此,利用一个处理单元侧输送机构180,可以在连接在共用输送室150上的全部负载锁定室160M、160N和各处理室140A~140F中进行存取。处理单元侧输送机构180具有两个拾取器183A、183B,可以一次取两块晶片。处理单元侧输送机构180的拾取器183A、183B分别设置有可以检测是否夹持住晶片W的晶片传感器183a、183b。晶片传感器183a、183b可以分别例如由众所周知的拾波传感器构成。For example, when the processing unit-
此外,处理单元侧输送机构180的结构不限定为所述的结构,也可以由两个输送机构构成。例如,可以在共用输送室150靠近底端一侧设置有由结构上可弯曲、升降、旋转的多关节臂构成的第一输送机构,在共用输送室150靠近前端一侧设置有由结构上可弯曲、升降、旋转的多关节臂构成的第二输送机构。此外,处理单元侧输送机构180的拾取器个数不限定为两个的情况,例如也可以是仅有一个拾取器的输送机构。In addition, the structure of the processing unit
在共用输送室150内,在各处理室140(140A~140F)的闸阀144(144A~144F)的前面部位,分别配置可以检测晶片W是否被送入或取出各处理室140(140A~140F)的晶片传感器188(188A~188F)。此外,在共用输送室150前端一侧设置有用于进行通过处理单元侧输送机构180输送的晶片W的位置修正的位置传感器189。此外,晶片W的位置修正的具体例在后面叙述。这些晶片传感器188A~188F、位置传感器189例如分别由众所周知的拾波传感器构成。In the
在所述基板处理装置100中设置有控制部200,包括所述输送单元侧输送机构170、处理单元侧输送机构180、各闸阀133、144、154、162、定位器136、微粒测量室134等的控制,对基板处理装置整体的动作进行控制。The
(构成控制部的例子)(Example of configuring the control unit)
在此,参照附图对所述控制部200的具体结构的例子进行说明。图2是表示控制部200的具体结构的例子的框图。如图2所示,控制部200包括:构成控制部主体的CPU(中央处理器)210、存入用于CPU210控制各部分的程序数据(例如晶片W的处理和后面叙述的复原处理的程序数据)等的ROM(只读存储器)220、设置用于CPU210进行的各种数据处理的存储区等的RAM(随机存储器)230、用计时的计数器等构成的计时装置240、用显示操作画面和选择画面等的液晶显示器等构成的显示装置250、可以进行输入和编辑操作人员的处理方法等各种数据的输入和向规定的存储介质输出处理方法和处理记录等各种数据输出的输入输出装置260、在基板处理装置100产生漏电等异常时通报的报警器(例如蜂鸣器)等的通报装置270、用于控制基板处理装置100的各部分的各种控制器280、和硬盘(HDD)等的存储装置290。Here, an example of a specific configuration of the
通过控制母线、系统母线、数据母线等的总线与所述CPU210、ROM220、RAM230、计时装置240、显示装置250、输入输出装置260、通报装置270、各种控制器280、存储装置290进行电连接。Electrically connect with the
在所述存储装置290中,存储例如是否向盒容器132(132A~132C)收容各晶片W等的晶片收容信息292、各晶片W的处理到什么阶段等的晶片处理履历信息(例如处理记录)294。In the
在此,参照图3对所述晶片收容信息292的具体例进行说明。如图3所示,晶片收容信息292包括容器名称、系列编号、晶片ID、晶片收容状况、复原处理、晶片处理状况等的项目。容器名称的项目是用于指定盒容器的。晶片收容信息292是用于在每个盒容器中存储。例如若是图1所示的基板处理装置100,则表示盒容器132A~132C的类别。Here, a specific example of the
系列编号的项目是用于指定一块块收容晶片W的盒容器132内的晶片收容层的项目。例如,在一个盒容器132中能够收容25块晶片W的情况下,系列编号为1~25。晶片ID的项目是用于表示收容盒容器132内的各批中的晶片W的晶片ID的项目。其中所说的晶片ID是在晶片W处理前由操作人员赋予的ID,例如在处理前对收容盒容器132中的晶片W,操作人员用输入输出装置260通过规定的操作来进行设定。晶片收容状况的项目是表示晶片W是否收容盒容器132的晶片收容层的项目。在图3所示的例子中,“有”的情况表示收容晶片W,“无”的情况表示没有收容晶片W。The item of the serial number is an item for specifying a wafer storage layer in the cassette container 132 that stores wafers W one by one. For example, when 25 wafers W can be accommodated in one cassette container 132, the series numbers are 1-25. The item of wafer ID is an item for indicating the wafer ID of the wafer W in each lot in the cassette container 132 . The wafer ID mentioned here is an ID given by the operator before the wafer W is processed. For example, the operator sets the wafer W in the cassette container 132 through a predetermined operation using the input/
复原处理的项目是用于表示盒容器132的各晶片W是否是进行了后面叙述的复原处理的晶片W的项目。其中,所说的复原处理是例如在基板处理装置100产生漏电等异常而停止工作的情况下,异常解除后使基板处理装置100的状态复原的处理。在图3所示的例子中,“有”的情况是表示进行了复原处理的晶片W,“无”的情况是表示没有进行复原处理的晶片W。晶片处理状况的项目是用于表示盒容器132的各晶片W的现在处理状况(处理阶段)的项目。在图3所示的例子中,“处理完成”表示晶片W必要的处理全部完成,“没有处理”表示晶片W必要的处理完全没有进行。此外,“复原处理中”表示现在正在进行复原处理。The item of recovery processing is an item for indicating whether or not each wafer W of the cassette container 132 is a wafer W subjected to recovery processing described later. Here, the restoration process is a process for restoring the state of the
若采用这样的晶片收容信息292,则除了晶片W向收容盒容器132的收容状况以外,还可以掌握有无复原处理、晶片W的处理状况。此外,若将这样的晶片收容信息292由操作人员通过输入输出装置260的操作,在显示装置250上显示,则操作人员也可以看到这些晶片收容信息。这种情况下如图3所示,进行了复原处理的晶片W用斜线表示,其中对于复原处理中的晶片W也可以用深斜线表示。这样可以容易地判断是否是复原处理的晶片W,例如在此后的晶片W的检查等中可以有效地利用。According to such
此外,晶片收容信息292不限定于图3所示的项目,也可以增加项目数,此外,若至少就晶片收容状况分开,则未必要设置复原处理、晶片处理状况的项目。In addition, the
下面参照图4对所述晶片处理履历信息294的具体例进行说明。如图4所示,晶片处理履历信息294包括容器名称、系列编号、晶片ID、处理编号、晶片的处理阶段、经过时间等的项目。容器名称、系列标号、晶片ID的各项目分别与图3所示的相同,所以省略了详细的说明。A specific example of the wafer
处理编号的项目是用于表示将晶片W实施的处理阶段赋予编号的项目。晶片处理阶段的项目是用于表示晶片W实施的各处理阶段的项目。经过时间的项目是用于表示各处理阶段的时间信息的项目。在图4所示的例子中,例如表示晶片W的处理开始时间(STARTTIME)、向各室送入晶片W的时间(IN)、从各室将晶片W取出的时间(OUT)。此外,在处理阶段的中途基板处理装置100的工作停止的情况下,表示停止时间(STOPTIME)。在图4所示的例子中,可以看出第一处理室140A的蚀刻工序的中途,基板处理装置100的工作停止的情况。The item of the process number is an item indicating that the process stage performed on the wafer W is assigned a number. The item of the wafer processing stage is an item indicating each processing stage performed on the wafer W. The item of elapsed time is an item for indicating time information of each processing stage. In the example shown in FIG. 4 , for example, the processing start time (STARTTIME) of the wafer W, the time (IN) of carrying the wafer W into each chamber, and the time (OUT) of taking out the wafer W from each chamber are shown. In addition, when the operation of the
此外,这样的晶片处理履历信息294根据例如设置在各室中的晶片传感器135a、138a、165M、165N、188A~188F和设置在各输送机构170、180中的晶片传感器173a、173b、183a、183b的晶片W的检查结果、处理方法等的晶片处理信息、计时装置240的计时时间等来确定。例如晶片W向定位器136送入或取出的时间根据晶片传感器138a检测出晶片W的时间来确定。此外,晶片W向负载锁定室160M、160N送入或取出的时间根据用晶片传感器165M、165N检测出晶片W的时间来确定。晶片W向第一~第六处理室140A~140F送入或取出的时间根据用晶片传感器188A~188F检测出晶片W的时间来确定。In addition, such wafer
若采用这样的晶片处理履历信息294,则除了晶片W在(滞留)哪个室的定位信息、有关处理阶段的时间信息以外,还可以掌握在基板处理装置100的工作停止时的晶片W的定位信息和处理阶段信息。此外,关于复原处理的处理阶段也通过加在晶片处理履历信息294,而可以掌握复原处理实施到哪个处理阶段。According to such wafer
此外,若通过由操作人员的输入输出装置260的操作,使这样的晶片处理履历信息294在显示装置250上显示,则操作人员也可以看到这些晶片处理履历信息294。此外,晶片处理履历信息294并不限定在图4所示的项目。In addition, when such wafer
除了所述这样的晶片收容信息292、晶片处理履历信息292以外,使基板处理装置100工作对晶片进行处理所需要的信息等被存储在存储装置290中。例如存储在微粒测量室134测量的测量结果的微粒测量结果信息、用于在各处理室140(140A~140F)处理晶片W需要的处理方法等的晶片处理信息也被存储在存储装置290中。控制部200的CPU210根据存储在存储装置290中的晶片处理信息,控制在各处理室140A~140F对晶片W的处理。In addition to the above-mentioned
(基板处理装置的动作)(Operation of substrate processing equipment)
下面,对如上述那样构成的基板处理装置的动作进行说明。基板处理装置100根据上述那样的控制部200的CPU210的程序工作,在各晶片W的每个处理阶段制作成晶片处理履历信息(例如处理方法)294,存储在存储装置290中。Next, the operation of the substrate processing apparatus configured as described above will be described. The
例如,利用输送单元侧输送机构170从盒容器132A~132C中的某一个输送来的晶片W被输送到定位器136,转移到定位器136的转动载物台138,在此被定位。被定位的晶片W从定位器136送出,送入负载锁定室160M或160N内。此时,必须的全部处理已完成的结束处理晶片W若在负载锁定室160M或160N,则取出处理完的晶片W后,送入未处理的晶片W。For example, the wafer W transported from any one of the
送入负载锁定室160M或160N的晶片W,通过处理单元侧输送机构180从负载锁定室160M或160N取出,将该晶片W送入处理的处理室140实施规定的处理。然后,完成在处理室140的处理的处理后的晶片W通过处理单元侧输送机构180从处理室140取出。这种情况下,在该晶片W需要连续在多个处理室140进行处理的情况下,将该晶片W送入进行下一个处理的其它处理室140,实施在该处理室140的处理。The wafer W carried into the
这样完成了全部需要处理的处理后的晶片返回到负载锁定室160M或160N。返回到负载锁定室160M或160N的处理后的晶片W通过输送单元侧输送机构170返回到原来的盒容器132A~132C。The processed wafer, which completes all required processing, is returned to the
而为了提高各处理室140的处理的效率,希望使晶片W尽可能靠近处理室140待机,所以,在处理室140的正在进行处理期间,也要顺序地从盒容器132取出晶片W,使这些晶片W在共用输送室150、负载锁定室160M或160N、定位器136等待机。若在处理室140完成一块晶片W的处理,则直接返回到原来的盒容器132,将所述各待机中的晶片W顺序输送,在共用输送室150待机的下一块晶片W直接送入处理室140。In order to improve the processing efficiency of each processing chamber 140, it is desirable to make the wafer W stand by as close as possible to the processing chamber 140. Therefore, during the ongoing processing of the processing chamber 140, the wafer W is also sequentially taken out from the cassette container 132, so that these The wafer W waits in the
在这样的基板处理装置100的工作中,若基板处理装置100中产生故障、停电、漏电等的异常,则基板处理装置100例如就断电而停止工作。若基板处理装置100的工作停止,则例如各处理室140A~140F内正在处理的晶片处理在中途被中断,原封不动地滞留在处理室140A~140F内。此外,在输送单元120内(例如输送室130内、定位器136内、微粒测量室134内)以及处理单元110内(例如共用输送室150内、负载锁定室160M、160N内)等中待机的晶片W原封不动地滞留在各室内。During operation of such a
在本实施方式的基板处理装置100中,在如所述那样因产生异常而使基板处理装置100的工作停止的情况下,在该异常解除后,若重新使基板处理装置100投入电源,就自动进行下面说明的复原处理。In the
(复原处理)(recovery processing)
在此,对基板处理装置100的复原处理进行说明。基板处理装置100的复原处理利用控制部200的CPU210,按照存储在ROM220或存储装置290等中的程序来实施。Here, the recovery process of the
本实施方式的复原处理可以主要分为:基板回收处理(基板回收工序),对晶片W进行规定的晶片挽救处理(基板挽救处理),如盒容器132回收;装置内状态复原处理(装置内状态复原工序),复原基板处理装置100的各室内的状态。下面,分别对各自的处理进行说明。The recovery processing in this embodiment can be mainly divided into: substrate recycling processing (substrate recycling process), performing prescribed wafer salvage processing (substrate salvage processing) on the wafer W, such as cassette container 132 recovery; device internal state restoration processing (device internal state Restoration step) restores the state of each chamber of the
(复原处理中的基板回收处理)(Substrate recovery processing during recovery processing)
首先,对基板回收处理进行说明。在基板回收处理中,对滞留在基板处理装置100的各室中的晶片W,对应于直到基板处理装置100的工作停止时(以下也简单称为工作停止时)实施的处理阶段,进行相应的挽救处理(基板挽救处理),将该晶片W返回到输送始点的盒容器132。例如对基板处理装置100内的晶片W,对应于工作停止时晶片W滞留的室,进行相应的挽救处理。若从大局的观点看,则根据晶片W滞留的室不同,对于该晶片W直到工作停止处理到哪个阶段这样的晶片处理阶段是不同的。例如滞留在输送单元120内的晶片W是从盒容器132取出,然后要向处理单元输送的没有处理阶段,或是已经完成全部需要的处理,从处理单元110返回的处理完成阶段。与此相反,滞留在共用输送室150内的晶片W除了是没有处理阶段的晶片和处理完成阶段的晶片以外,还存在有是还剩下在其它处理室的处理的处理没有完成阶段的晶片的可能性。因此,这样通过对应于晶片W滞留的室进行相应的挽救处理,可以对应于晶片W的处理阶段进行恰当的挽救处理。First, the substrate recycling process will be described. In the substrate recovery process, wafers W staying in each chamber of the
作为这样的晶片挽救处理,例如滞留在输送单元120内(例如输送室130内、定位器136内、微粒测量室134内等)的晶片W由于可以认为是处理还完全没有进行的未处理的晶片W、或已经完成全部需要的处理的处理完成的晶片W,所以这些晶片W直接返回输送始点的盒容器132也没有问题。因此,处于这样的输送单元120内的晶片W基板上原封不动地返回到输送始点的盒容器132中。As such a wafer salvage process, for example, the wafers W remaining in the transfer unit 120 (for example, the
与此相反,滞留在处理单元110内(例如各处理室140A~140F、共用输送室150内、负载锁定室160M、160N内)的晶片W除了是没有处理阶段的晶片和处理完成阶段的晶片以外,还存在有是还剩下没有处理阶段的晶片的可能性。例如在处理室140内,例如存在有在蚀刻工序等的处理中途被中断的处理中途阶段的晶片W(处理中途的晶片)在此状态下滞留的可能性。此外,在共用输送室150内,是要在多个处理室140的处理的晶片W,也存在滞留有剩下在其它的处理室的处理,还没有全部处理完的处理没有完成阶段的晶片W(处理没有完成的晶片)的可能性。例如假设存在有需要连续在第一~第六处理室140A~140F处理的晶片,存在有对于该晶片W完成了在第一~第五处理室140A~140E的处理,从处理室140E取出,在共用输送室150内等待在剩余的第六处理室140F的处理的状态下,基板处理装置100工作停止的情况。In contrast, the wafers W staying in the processing unit 110 (for example, the
如果假设对于这样处理中途的晶片W和处理没有完成的晶片W也与上述相同,直接回收到盒容器132中,则有时就变成不能挽救这些晶片W。例如如聚类的过程处理等那样,因在中途被中断的处理,若被回收到原来的盒容器132中,则由于该晶片W暴露在大气中,而不能对该晶片W进行剩余的处理(例如剩余的蚀刻处理等),有时挽救晶片本身变得不可能。因此,对于这样的在处理单元110内的晶片W基板上实施剩余的处理,处理完成后再回收到输送始点的盒容器132中。Assuming that the wafers W that are in the middle of the process and the wafers W that have not been processed are collected into the cassette container 132 as described above, these wafers W may not be salvageable. For example, as in the process of clustering, if the interrupted processing is returned to the original cassette container 132, the wafer W cannot be processed for the remainder because the wafer W is exposed to the atmosphere ( such as the remainder of the etching process, etc.), sometimes it becomes impossible to salvage the wafer itself. Therefore, the remaining processing is performed on the wafer W substrate in the
对晶片W进行剩余的处理的情况要先实施稳定工序,调整处理室140内的状态。例如在对处理室140的晶片W进行剩余的蚀刻处理的情况下,进行了处理室140内的排气处理后,进行抽真空,使处理室140内的压力为规定的压力,重新导入处理气体,施加高频电,恢复等离子体。作为处理室140的排气处理可以例举的有:例如导入N2气体和惰性气体等的吹扫气体,向大气开放,使此向大气开放和抽真空反复规定的次数的循环吹扫等。例如在处理气体使用腐蚀性气体(例如氯气、氯化氢等)的情况下,可以将导入N2气体等的稀释气体的循环吹扫作为酸排气处理来实施。When the remaining processing is performed on the wafer W, a stabilization step is first performed to adjust the state in the processing chamber 140 . For example, in the case of performing the remaining etching process on the wafer W in the processing chamber 140, after the evacuation process in the processing chamber 140 is performed, the pressure in the processing chamber 140 is evacuated to a predetermined pressure, and the processing gas is reintroduced. , apply high-frequency electricity to restore the plasma. As the exhaust process of the processing chamber 140, for example, introducing a purge gas such as N 2 gas or an inert gas, opening to the atmosphere, and repeating a predetermined number of cycles of opening to the atmosphere and evacuating, etc. For example, when a corrosive gas (for example, chlorine gas, hydrogen chloride, etc.) is used as the processing gas, circulation purge of introducing a diluent gas such as N 2 gas can be implemented as an acid exhaust treatment.
这样,在本实施方式中,在因漏电等异常造成基板处理装置的工作停止的情况下,通过进行对应于滞留有晶片W的基板处理装置100的各室的挽救处理,可以对应于晶片W的处理阶段,进行相应的挽救处理,所以可以正确地挽救晶片W。进行所述挽救处理的情况的各室的顺序优选的是从,处于靠近输送始点的和容器132的室晶片W开始,实施基板挽救处理。例如优选的是输送单元120、负载锁定室160、共用输送室150、处理室140的顺序。这样由于可以顺利进行晶片W的回收,所以可以实现有效的复原处理。In this way, in the present embodiment, when the operation of the substrate processing apparatus is stopped due to an abnormality such as electric leakage, by performing rescue processing corresponding to each chamber of the
此外,在进行基板挽救处理的情况下,需要检测在各室(例如输送单元120、负载锁定室160、共用输送室150、处理室140)的内部是否滞留有晶片W。作为这样的晶片检测方法,可以根据例如图4所示的晶片处理履历信息294中所存储的晶片处理阶段,检测处理单元110内、输送单元120内的哪个室滞留有晶片W。In addition, when the substrate salvage process is performed, it is necessary to detect whether or not the wafer W is stagnant in each chamber (for example, the
此外,也可以在输送单元120的微粒测量室134、定位器136、输送室130中,根据各室的晶片传感器135a、138a、输送单元侧输送机构170的传感器173a、173b检测晶片W。此外,在处理单元110的各负载锁定室160M、160N、共用输送室150中,根据各室的晶片传感器165M、165N、处理单元侧输送机构180的晶片传感器183a、183b检测晶片W。In addition, in the
而且此外,也可以利用输送单元侧输送机构170和处理单元侧输送机构180,通过晶片W的送入或取出的动作来检测是否滞留有晶片W。例如在处理室140A~140F中,利用处理单元侧输送机构180,通过晶片W的送入或取出的动作,根据对应于各室的共用输送室的晶片传感器188A~188F和处理单元侧输送机构180的晶片传感器183a、183b,检测在处理室140A~140F内是否滞留有晶片W。In addition, it is also possible to detect whether or not a wafer W remains by carrying in or taking out the wafer W by using the transport unit-
(复原处理中的装置内状态复原处理)(In-device status restoration processing during restoration processing)
下面,对所述复原处理中的装置内状态复原处理进行说明。这里的装置内状态复原处理是例如通过对输送单元120内、共用输送室150内、负载锁定室160M、160N内、各处理室140A~140F内等的各室实施清理处理,使各室内成为可以实施晶片W的处理的复原处理。作为对各室的清理处理,例如导入N2气体等的吹扫气体,进行使抽真空和向大气开放重复规定次数的清理处理(例如NPPC:Non-PlasmaParticle Cleaning)。在此的清理处理中不仅是向大气开放时,在抽真空时也继续导入吹扫气体。如采用这样的清理处理,则可以去除在各室内漂浮的微粒(例如附着物、灰尘、废渣等)。此外,通过反复抽真空和向大气开放,附着在各室的壁面和各室内所配置的部件等上的微粒也剥落,强制漂浮,也可以将它们去除。Next, in the restoration processing, the state restoration processing in the device will be described. The state recovery process in the device here is, for example, performing cleaning treatment on each chamber in the
此外,作为基板处理装置100的各室的清理处理,不限定于所述的方法,可以进行众所周知的清理处理。例如可以使用利用等离子体的清理处理。In addition, the cleaning process of each chamber of the
(复原处理的具体例)(Concrete example of restoration processing)
下面,例举具体的例子对上述那样的复原处理进行更详细地说明。图5是表示本实施方式的基板处理装置的复原处理的具体例的主程序的流程图。Hereinafter, the restoration processing as described above will be described in more detail with reference to a specific example. FIG. 5 is a flowchart showing a main routine of a specific example of restoration processing in the substrate processing apparatus according to the present embodiment.
在图5所示的复原处理中,作为基板回收处理,首先在S110~S150步骤和S200~S500步骤进行对应于滞留晶片W的各室的晶片挽救处理(基板挽救处理),使滞留在各室的晶片W回收到输送始点的盒容器132中。也就是作为输送单元内基板挽救处理,在S110步骤中判断在输送单元120内有晶片W的情况下,在S200步骤中进行输送单元120内的晶片挽救处理。此外,作为处理单元内基板挽救处理,在S120步骤中判断在负载锁定室160内有晶片W的情况下,在S300步骤中进行负载锁定室160内的晶片挽救处理(负载锁定室内基板挽救处理),在S130步骤中判断在共用输送室150内有晶片W的情况下,在S400步骤中进行共用输送室150内的晶片挽救处理(共用输送室内基板挽救处理),在S140步骤中判断在处理室140内有晶片W的情况下,在S500步骤中进行处理室140内的晶片挽救处理(处理室内基板挽救处理)。下面,对这些晶片挽救处理的具体例进行说明。In the recovery process shown in FIG. 5 , as the substrate recovery process, first, in steps S110 to S150 and steps S200 to S500 , a wafer salvage process (substrate salvage process) corresponding to each chamber where the wafer W remains is performed, and the remaining wafer W is removed from each chamber. The wafers W are collected into the cassette container 132 at the transport starting point. That is, as the substrate salvage process in the transport unit, when it is determined in step S110 that there is wafer W in the
(输送单元内的晶片挽救处理)(Wafer salvage processing in the transfer unit)
首先,参照图6对输送单元内的晶片挽救处理(S200步骤)的具体例进行说明。图6是表示输送单元内的晶片挽救处理的子程序的流程图。作为输送单元120内的晶片W,例如除了在输送室130内以夹持在输送单元侧输送机构170上的状态滞留的晶片W以外,考虑滞留在定位器136内和微粒测量室134内的晶片W,所以这些晶片W成为输送单元120内的挽救处理的对象。First, a specific example of the wafer salvage process (step S200 ) in the transfer unit will be described with reference to FIG. 6 . FIG. 6 is a flowchart showing a subroutine of wafer salvage processing in the transfer unit. As the wafer W in the
在图6所示的输送单元内的晶片挽救处理中,首先在S210步骤中将滞留在输送单元120内的晶片W例如用输送单元侧输送机构170送入微粒测量室134。此时,对于在输送室130内的晶片W,也就是对于在输送单元侧输送机构170的拾取器上的晶片W,直接送入微粒测量室134。对于在定位器136内的晶片W,用输送单元侧输送机构170从定位器136取出,送入微粒测量室134。在这种情况下,在微粒测量室134已经滞留晶片W的情况下,先对该晶片W实施微粒测量后,将该晶片W返回到输送始点的盒容器132中。In the wafer salvage process in the transport unit shown in FIG. 6 , first, in step S210 , the wafer W remaining in the
然后,在S220步骤中测量在送入微粒测量室134的晶片W上附着的微粒量(微粒测量),在S230步骤中,将该测量的结果例如作为微粒测量结果信息的记录存储到控制部200的存储装置290中。然后,在S240步骤中,用输送单元侧输送机构170将晶片W从微粒测量室134取出,返回到输送始点的盒容器132中。一旦完成这样的一系列输送单元120内的晶片挽救处理,返回到图5所示的主程序。Then, in step S220, the amount of particles adhering to the wafer W carried into the
若采用这样的输送单元120内的晶片挽救处理,则滞留在输送单元120内的全部晶片W在进行了微粒测量后,被回收到输送始点的盒容器132中。这样做是因为如假设晶片W滞留在输送单元120内,这样的晶片W的处理阶段是还没有进行处理的未处理阶段,或已经全部完成处理的处理完成阶段,所以这些晶片W即使直接回收也没有问题。因此,在输送单元120内的晶片挽救处理中,只要检测存在于输送单元120内,就知道晶片W的处理阶段,所以未必要例如从晶片处理履历信息294检测晶片W的处理阶段。According to such a wafer salvage process in the
此外,滞留在输送单元120内的晶片W在回收到盒容器132中之前,进行微粒测量,其结果被存储到记录等中。因此根据微粒量的测量结果,可以判断被回收到盒容器132中的晶片W是否可以进行再处理。In addition, before the wafer W remaining in the
(负载锁定室内的晶片挽救处理)(wafer salvage processing in load lock chamber)
下面,参照图7对负载锁定室160内的晶片挽救处理(S300步骤)的具体例进行说明。图7是表示负载锁定室160内的晶片挽救处理的子程序的流程图。在图1所示的基板处理装置100中,由于有两个负载锁定室160M、160N,用于这样的基板处理装置100上的图7所示的处理表示晶片W滞留在这些负载锁定室160M、160N中的负载锁定室160的处理。Next, a specific example of the wafer salvage process (step S300 ) in the load lock chamber 160 will be described with reference to FIG. 7 . FIG. 7 is a flowchart showing a subroutine of the wafer salvage process in the load lock chamber 160 . In the
在图7所示的负载锁定室内的晶片挽救处理中,首先,在S310步骤中,将晶片W放置在负载锁定室160不动,进行负载锁定室160内的排气处理。作为排气处理,例如控制负载锁定室160的排气系统和气体导入系统,同时使抽真空和向大气开放重复规定次数,进行在向大气开放时导入吹扫气体(例如N2气体)的所述循环吹扫。In the wafer salvage process in the load lock chamber shown in FIG. 7 , first, in step S310 , the wafer W is placed in the load lock chamber 160 and the load lock chamber 160 is exhausted. As the exhaust process, for example, the exhaust system and the gas introduction system of the load lock chamber 160 are controlled, evacuation and opening to the atmosphere are repeated a predetermined number of times at the same time, and a purge gas (for example, N gas) is introduced at the time of opening to the atmosphere. The cycle purging described above.
然后,在S320步骤中,将位于负载锁定室160内的晶片W用输送单元侧输送机构170送入微粒测量室134。具体地说,进行将负载锁定室160向大气开放等的压力调整后,通过输送单元侧输送机构170将该晶片W取出,并送入微粒测量室134。此后,在S330步骤中,进行微粒测量,在S340步骤中,将其测量结果存储到例如记录等中。此后,在S350步骤中,通过输送单元侧输送机构170将晶片W从微粒测量室134取出,返回到输送始点的盒容器132中。若完成这样的一系列负载锁定室160内的晶片挽救处理,则返回到图5所示的主程序。Then, in step S320 , the wafer W located in the load lock chamber 160 is transported into the
若采用这样的负载锁定室160内的晶片挽救处理,则滞留在负载锁定室160内的全部晶片W与输送单元120内的晶片W相同,进行微粒测量后,被回收到输送始点的盒容器132中。这样做是因为假设晶片W滞留在负载锁定室160内,则该晶片W的处理阶段与输送单元120内的晶片W相同,是没有处理阶段或者处理完成阶段,所以这些晶片W即使直接回收也没有问题。According to the wafer salvage process in the load lock chamber 160, all the wafers W staying in the load lock chamber 160 are the same as the wafers W in the
但是,在从负载锁定室160取出晶片W之前,进行负载锁定室160的排气处理(例如循环吹扫)。这是由于担心在负载锁定室160中,来自处理室140的处理气体残留在晶片W上。此外,也担心在负载锁定室160进行抽真空的中途,在基板处理装置100的工作停止的情况下,废渣和灰尘从排气一侧逆流。通过进行负载锁定室160的排气处理,可以除去这些残留的处理气体、废渣、灰尘等。此外,作为处理气体使用腐蚀性气体(例如氯气、氯化氢等)进行晶片W的处理的情况下,也可以将所述排气处理作为负载锁定室160内的酸排气处理来进行。因此,由于可以防止腐蚀性气体流向输送单元120一侧,所以可以防止输送单元120的构成部件和输送单元侧输送机构170等的腐蚀。However, before the wafer W is taken out of the load lock chamber 160, the load lock chamber 160 is exhausted (eg, cyclic purge). This is because there is a concern that the processing gas from the processing chamber 140 remains on the wafer W in the load lock chamber 160 . In addition, there is a concern that slag and dust may flow back from the exhaust side when the operation of the
(共用输送室内的晶片挽救处理)(Wafer salvage processing in shared transfer chamber)
下面,参照图8对共用输送室150内的晶片挽救处理(S400步骤中)的具体例进行说明。图8表示共用输送室150内的晶片挽救处理的子程序的流程图。在共用输送室150内,除了在任何处理室140也没有进行处理的未处理晶片W以外,有可能存在在一个以上的处理室140中滞留已经完成处理的处理后的晶片W。此外,在所述处理后的晶片W中,不仅是在需要的全部处理室140中完成处理的处理完成晶片,而且还有需要连续在多个处理室140的处理的晶片W,还包括在其它处理室140的处理还没有完成的处理没有完成的晶片W。因此,在共用输送室150内的晶片挽救处理中,检测这样的晶片W的处理阶段,对应于其处理阶段进行相应的晶片挽救处理。Next, a specific example of the wafer salvage process (in step S400 ) in the
在图8所示的共用输送室内的晶片挽救处理中,首先,在S410步骤中,判断处于共用输送室150内的晶片W是否是处理没有完成的晶片W。具体地说,例如通过图4所示的晶片处理履历信息294检测位于共用输送室150内的晶片W的处理阶段,判断该晶片W的处理阶段是否是处理没有完成的阶段。例如是需要在第一处理室140A和第二处理室140B中的处理的晶片W,该晶片W的晶片处理阶段例如是在第一处理室140A的处理完成后的在共用输送室150内停止的情况下,由于还没有实施第二处理室140B中的处理,所以可以判断该晶片W是处理没有完成的阶段。In the wafer salvage process in the common transfer chamber shown in FIG. 8, first, in step S410, it is determined whether the wafer W in the
在所述S410步骤中,判断位于共用输送室150内的晶片W是处理没有完成的晶片W的情况下,在S420步骤中对处理没有完成的晶片W进行处理后,进入S430步骤中的处理。其中,对在S420步骤中的处理没有完成的晶片W的处理在后面详细叙述。此外,在S410步骤中,判断位于共用输送室150内的晶片W不是处理没有完成的晶片W的情况下,也就是判断是没有进行处理的晶片W或处理完成的晶片W的情况下,进入S430步骤的处理。In the step S410, if it is determined that the wafer W in the
在S430步骤中,将所述没有进行处理的晶片W或处理完成的晶片W例如用处理单元侧输送机构180送入负载锁定室160M或160N,在该负载锁定室160M或160N内实施所述那样的排气处理,例如实施所述那样的循环吹扫。在这里所说的处理完成的晶片W中,除了因基板处理装置100的异常造成工作停止时(或复原处理开始时)处理完成的晶片以外,也包括实施复原处理的对处理没有完成的晶片W的处理(S420步骤)后,成为处理完成晶片W的晶片。In step S430, the wafer W that has not been processed or the wafer W that has been processed is sent into the
继续,在S440步骤中将该晶片W用输送单元侧输送机构170送入微粒测量室134。具体地说,进行将负载锁定室160M或160N向大气开放等的压力调整后,用输送单元侧输送机构170将该晶片W取出,送入微粒测量室134。然后,在S450步骤中进行微粒测量,在S460步骤中将其测量结果例如存储到记录等中。此后,在S470步骤中用输送单元侧输送机构170将该晶片W从微粒测量室134取出,返回到输送始点的盒容器132。这样,若完成一系列的共用输送室150内的晶片挽救处理,则返回到图5所示的主程序。Next, in step S440 , the wafer W is transported into the
(对处理未完成的晶片的处理)(processing of unfinished wafers)
在此,参照图9对图8所示的在S420步骤中的处理没有完成的晶片W的处理的具体例进行说明。图9是表示对处理没有完成的晶片W的处理的子程序的流程图。Here, a specific example of the processing of the wafer W that has not been processed in step S420 shown in FIG. 8 will be described with reference to FIG. 9 . FIG. 9 is a flowchart showing a subroutine for processing a wafer W whose processing has not been completed.
在图9所示的处理没有完成的晶片W的处理中,首先,在S421步骤中判断将处理没有完成的晶片W此后要输送到的输送目的地的处理室140是否是其它晶片W的处理途中。判断输送目的地的处理室140是否是其它晶片W的处理途中,例如通过用图4所示的晶片处理履历信息294检测所述其它的晶片W的处理阶段来判断。在S421步骤中判断所述输送目的地的处理室140是处理途中的情况下,在S422步骤中待机到该输送目的地的处理室140中的其它晶片W的处理结束为止,返回到图8所示程序。输送目的地的处理室140中的其它晶片W的处理结束后,进行处理没有完成的晶片W的处理。具体地说,在此情况下,由于处理没有完成的晶片W是在共用输送室150正在待机的状态,当图8的程序结束后返回图5到主程序时,在S150步骤中由于输送中的晶片W还没有被回收,所以重新实施S400的处理,也就是重新实施图9所示的子程序。此时,若在输送目的地的处理室中的其它晶片W的处理结束,则通过在S423步骤以后的处理,进行在共用输送室150正在待机的处理没有完成的晶片W的处理。In the processing of the incomplete wafer W shown in FIG. 9 , first, in step S421, it is judged whether or not the processing chamber 140 to which the incomplete wafer W is to be transported is in the process of another wafer W being processed. . Whether or not the processing chamber 140 of the transfer destination is in the process of processing another wafer W is determined by detecting the processing stage of the other wafer W using the wafer
另一方面,在S421步骤中判断所述输送目的地的处理室140不是处理途中的情况下,在S423步骤中控制处理单元侧输送机构180,对处理没有完成的晶片W进行位置修正。这是因为在处理单元侧输送机构180的输送动作中,在使基板处理装置100的工作停止的情况下,输送动作中的处理单元侧输送机构180也紧急停止,有时存在因惯性力等使夹持在处理单元侧输送机构180的拾取器上的晶片的位置偏离的情况。若这样在晶片W的位置偏离的状态下送入处理室140,由于担心例如被闸阀144挂住、或偏离处理室140的载物台142而放置,所以为了防止这样的晶片W的位置偏离,在送入处理室140之前进行晶片W的位置修正。On the other hand, when it is determined in step S421 that the processing chamber 140 of the transfer destination is not in the process of processing, in step S423 the
该晶片W的位置的修正例如利用设置在共用输送室150上的位置传感器189如下述那样进行。也就是保持在拾取器上夹持晶片W的状态将处理单元侧输送机构180送到位置传感器189上,通过位置传感器189检测该晶片W的偏离量。根据用位置传感器189检测出的偏离量,使处理单元侧输送机构180的拾取器位置挪动进行调整,通过这样来进行晶片W的位置修正。The correction of the position of the wafer W is performed as follows, for example, using the
然后,在S424步骤中用处理单元侧输送机构180将经过位置修正的处理没有完成的晶片W送入下次进行处理的处理室140。随后,在S425步骤中在输送目的地的处理室140中进行处理没有完成的晶片W的处理。Then, in step S424, the wafer W whose position correction has not been completed is carried into the processing chamber 140 for the next processing by the processing unit
此后,在S426步骤中判断是否完成全部的处理。若是需要在多个处理室140中进行处理的晶片W,判断是否在各处理室140中的处理全部结束,对该晶片W的全部处理是否完成。在S426步骤中判断全部的处理没有完成的情况下,返回到在S424步骤中的处理,进行剩余的处理。此外,在S426步骤中判断全部处理完成的情况下,一系列的处理没有完成的晶片的处理结束,返回到图8所示的程序。Thereafter, it is judged in step S426 whether or not all processing is completed. In the case of a wafer W to be processed in a plurality of processing chambers 140 , it is judged whether or not all processing in each processing chamber 140 has been completed, and whether or not all processing on the wafer W has been completed. When it is judged in step S426 that all the processing has not been completed, the process returns to the processing in step S424, and the remaining processing is performed. In addition, when it is judged in step S426 that all processes have been completed, the processing of the wafers for which a series of processes has not been completed is completed, and the process returns to the routine shown in FIG. 8 .
若采用这样的共用输送室150内的晶片挽救处理,在处于共用输送室150内的晶片W的处理阶段是处理完成的阶段的情况下,进行在负载锁定室160中的排气处理和微粒测量后,回收到输送始点的盒容器132。与此相反,在处于共用输送室150内的晶片W的处理阶段是处理没有完成的阶段的情况下,进行在需要的处理室中的处理,直到全部的处理完成,然后回收到输送始点的盒容器132。从而,例如对于处理没有完成的晶片W,由于不是直接回收到处于大气状态的盒容器132,所以处理没有完成的晶片W不暴露在大气中,可以防止不能挽救的情况发生。这样,通过对应于晶片W的处理阶段进行正确的挽救处理,可以尽可能多地挽救被处理基板。If the wafer salvage process in the
(处理室内的晶片挽救处理)(wafer salvage processing in processing chamber)
下面,参照附图10对处理室140内的晶片挽救处理的具体例进行说明。图10是表示处理室140内的晶片挽救处理的子程序的流程图。在图1所示的基板处理装置100中,由于具有六个处理室140A~140F,所以适用于这样的基板处理装置100的图10所示的处理,表示晶片W滞留在这些处理室140A~140F中的处理室140的处理。Next, a specific example of the wafer salvage process in the process chamber 140 will be described with reference to FIG. 10 . FIG. 10 is a flowchart showing a subroutine of wafer salvage processing in the processing chamber 140 . Since the
此外,在处理室140内除了送入该处理室140内还没有开始处理的未处理的晶片W、或者在该处理室140内的处理全部结束后没有取出而滞留的处理后的晶片W(包括处理没有完成的晶片W和处理完成的晶片W)以外,还有在该处理室140的处理已开始而在中途处理中断的处理中途的晶片W滞留的情况。此外,即使是处理中途的晶片W,根据在该处理室140中的处理阶段中的哪个处理阶段(例如后述的稳定工序中、蚀刻工序中、结束工序中等)因基板处理装置100工作停止而被中断的不同,其挽救处理也不同。因此,在处理室140内的晶片挽救处理中,还包括与在这样的处理室内的晶片W的处理阶段的处理相对应的挽救处理。In addition, in the processing chamber 140, unprocessed wafers W that have not yet started processing except for being carried into the processing chamber 140, or processed wafers W that have not been taken out after all processing in the processing chamber 140 In addition to wafers W whose processing has not been completed and wafers W whose processing has been completed, wafers W in the middle of processing that have started processing in the processing chamber 140 but are interrupted in the middle may remain. In addition, even if the wafer W is in the process of being processed, the operation of the
在图10所示的处理室140内的晶片挽救处理中,首先,在S510步骤中判断位于处理室140内的晶片W是否是处理中途的晶片W。具体地说,例如利用图4所示的晶片处理履历信息294检测位于处理室140内的晶片W的处理阶段,判断该晶片W的处理阶段是否是处理中途的阶段。例如,采用图4所示的晶片处理履历信息294,晶片ID132A-22的晶片W由于在第一处理室140A的蚀刻工序的处理途中,基板处理装置100停止工作,可以判断是处理中途的阶段。In the wafer salvage process in the processing chamber 140 shown in FIG. 10 , first, in step S510, it is determined whether the wafer W in the processing chamber 140 is a wafer W in process. Specifically, for example, the processing stage of the wafer W in the processing chamber 140 is detected using the wafer
在所述S510步骤中判断位于处理室140内的晶片W是处理中途的晶片W的情况下,在S520步骤中进行对处理中途的晶片W的处理后,进入在S530步骤中的处理。此外,在S520步骤中的对处理中途的晶片W详细的处理在后面叙述。此外,在S510步骤中判断位于处理室140内的晶片W不是处理中途的晶片W的情况下,例如判断是未处理的晶片W或者处理完的晶片W的情况下,直接进入S530步骤。If it is judged in step S510 that the wafer W in the processing chamber 140 is a wafer W in process, the wafer W in process is processed in step S520, and then proceeds to the process in step S530. In addition, the detailed processing of the wafer W in the middle of processing in step S520 will be described later. In addition, when it is determined in step S510 that the wafer W in the processing chamber 140 is not a wafer W in process, for example, if it is determined that it is an unprocessed wafer W or a processed wafer W, the process proceeds directly to step S530.
在S530步骤中,判断在处理室140内的晶片W是否是处理没有完成的晶片W。在这里所说的处理没有完成的晶片W,除了因基板处理装置100的异常造成工作停止时(或复原处理开始时)而处理没有完成的晶片W的以外,还包括在S520步骤中的对处理中途的晶片W的处理即使实施,还需要在其它处理室140中的处理的处理没有完成的晶片W。In step S530, it is determined whether the wafer W in the processing chamber 140 is a wafer W whose processing has not been completed. The unfinished wafer W mentioned here includes the processing of the incomplete wafer W in step S520 in addition to the unfinished wafer W that is processed when the operation is stopped (or when the recovery process is started) due to an abnormality of the
在所述S530步骤中判断位于处理室140内的晶片W是处理没有完成的晶片W的情况下,在S540步骤中进行对处理没有完成的晶片W的处理后,进入在S550步骤中的处理。此外,在S540步骤中的对处理没有完成的晶片W的处理与图8所示的S420步骤中的处理相同,其具体例与图9所示的相同。此外,在S530步骤中判断位于处理室140内的晶片W不是处理没有完成的晶片W的情况下,也就是判断是未处理的晶片W或者处理完的晶片W的情况下,进入S550步骤中的处理。If it is determined in step S530 that the wafer W in the processing chamber 140 is an unprocessed wafer W, the process proceeds to step S550 after processing the incomplete wafer W in step S540. In addition, the processing of the unfinished wafer W in step S540 is the same as the processing in step S420 shown in FIG. 8 , and its specific example is the same as that shown in FIG. 9 . In addition, when it is determined in step S530 that the wafer W in the processing chamber 140 is not an unprocessed wafer W, that is, an unprocessed wafer W or a processed wafer W, the process proceeds to step S550. deal with.
在S550步骤中例如通过处理单元侧输送机构180将未处理的晶片W或者处理完的晶片W送入负载锁定室160M或160N,在该负载锁定室160M或160N中实施所述的排气处理,例如实施循环吹扫。在这里所说的处理完成的晶片W,除了因基板处理装置100的异常造成的工作停止时(或者复原处理开始时)处理完成的晶片W的以外,还包括实施在S540步骤中对处理没有完成的晶片W的处理后成为处理完成的晶片W。In step S550, for example, the unprocessed wafer W or the processed wafer W is sent into the
接着,在S560步骤中用输送单元侧输送机构170将该晶片W送入微粒测量室134。具体地说,进行将负载锁定室160M或者160N向大气开放等的压力调整后,用输送单元侧输送机构170将该晶片W取出,送入微粒测量室134。此后,在S570步骤中进行微粒测量,在S580步骤中将其测量结果存储到例如记录等中。此后,在S590步骤中用输送单元侧输送机构170将晶片W从微粒测量室134取出,返回到输送始点的盒容器132中。若完成这样的一系列处理室140内的晶片挽救处理,则返回到图5所示的主程序。Next, the wafer W is transported into the
(对处理中途的晶片的处理)(processing of wafers in progress)
在此,参照图11对图10所示的S520步骤中的处理中途的晶片W的处理的具体例进行说明。图11是表示对处理中途的晶片W的处理的子程序的流程图。图11所示的对处理中途的晶片的处理是进行对应于因基板处理装置100的异常造成工作停止时被中断的晶片处理阶段的挽救处理。也就是一般在处理室140中的晶片W的处理分阶段经过多个处理工序(处理方法)进行,所以通过对应于在哪个处理工序的阶段中断来进行剩余的处理,可以进行对应于晶片W的处理阶段的适当的晶片挽救处理。Here, a specific example of the processing of the wafer W in the middle of the process in step S520 shown in FIG. 10 will be described with reference to FIG. 11 . FIG. 11 is a flowchart showing a subroutine for processing a wafer W that is being processed. The processing of a wafer in process shown in FIG. 11 is to perform rescue processing corresponding to the stage of wafer processing that is interrupted when the operation is stopped due to an abnormality of the
在所述处理室140的晶片W的处理工序(处理程序方法)因晶片W的处理的种类和条件等而不同,这里,图12~图14表示通过所示的稳定工序TS、蚀刻工序TP、结束工序TE进行蚀刻处理的情况的具体例。图12~图14中的TS、TP、TE分别表示稳定工序、蚀刻工序、结束工序需要的时间。图12~图14是表示晶片的处理工序的具体例的图,图12~图14的(a)分别表示晶片W的处理工序中在何处基板处理装置100工作停止的图,图12~图14的(b)分别表示在图12~图14的(a)中基板处理装置100工作停止的情况下的晶片W的剩余处理的图。The processing steps (processing procedure method) of the wafer W in the processing chamber 140 are different depending on the type and conditions of the processing of the wafer W. Here, FIGS . P. A specific example of the case where the etching process is performed at the end of the step TE . T S , T P , and TE in FIGS. 12 to 14 represent the time required for the stabilization process, the etching process, and the termination process, respectively. FIGS. 12 to 14 are diagrams showing specific examples of wafer processing steps. (a) of FIGS. (b) of 14 shows the remaining processing of the wafer W when the operation of the
在图11所示的对处理中途的晶片W的处理中,首先,在S521步骤中判断处理室140内的处理中途的晶片W是否是在稳定工序的途中停止处理的。具体地说,例如通过图4所示的晶片处理履历信息294检测位于处理室140内的晶片W的处理阶段,判断该晶片W的处理是否是在稳定工序中停止的。在S521步骤中判断处理室140内的处理中途的晶片W是在稳定工序的途中停止的情况下,在S522步骤中从最初实施该稳定工序。In the processing of the in-process wafer W shown in FIG. 11 , first, in step S521 , it is determined whether or not the process of the in-process wafer W in the processing chamber 140 was stopped during the stabilization process. Specifically, for example, the processing stage of the wafer W in the processing chamber 140 is detected from the wafer
如图12(a)所示,在稳定工序的途中晶片W的处理停止的情况下,由于在该晶片W上还没有进行蚀刻处理,所以作为对这样的处理中途的晶片W的剩余处理,如图12(b)所示,直接从稳定工序的最初进行再处理就足够。As shown in FIG. 12( a), when the processing of the wafer W is stopped in the middle of the stabilization process, since the etching process has not been performed on the wafer W, as the remaining processing of the wafer W in the middle of such processing, as follows As shown in Fig. 12(b), it is sufficient to perform reprocessing directly from the beginning of the stabilization process.
然后,若S522步骤中的处理结束,也就是若稳定工序结束,则在S527步骤中继续此后的处理,在S528步骤中判断该处理室140的剩余处理是否结束,在判断剩余处理没有结束的情况下,返回在S527步骤中的处理。作为此后的处理,在如图12(b)所示的处理中途的晶片W的剩余处理中,在稳定工序结束后继续实施蚀刻工序TP、结束工序TE。这样,若全部工序结束,则通过进行排气处理和压力控制等,调整处理室140内的状态后,将处理完的晶片W取出。然后,在S528步骤中判断该处理室140中的剩余处理结束的情况下,一系列的对处理中途的晶片的处理结束,返回至图10所示的处理室内的晶片挽救处理。Then, if the processing in the S522 step ends, that is, if the stabilization process ends, then continue the processing thereafter in the S527 step, and judge whether the remaining processing of the processing chamber 140 ends in the S528 step, if it is judged that the remaining processing has not ended Next, return to the processing in step S527. As the subsequent processing, in the remaining processing of the wafer W in the middle of the processing as shown in FIG. 12(b), after the stabilization step is completed, the etching step TP and the end step TE are continuously performed. In this manner, when all the processes are completed, the processed wafer W is taken out after the state in the processing chamber 140 is adjusted by performing exhaust processing, pressure control, and the like. Then, when it is judged in step S528 that the remaining processing in the processing chamber 140 is completed, a series of processing of the wafer in the middle of processing is completed, and the process returns to the wafer salvage processing in the processing chamber shown in FIG. 10 .
在所述S521步骤中判断处理室140内的处理中途的晶片W不是在稳定工序的途中停止的情况下,在S523步骤中判断处理室140内的处理中途的晶片W是否是在蚀刻工序的途中停止。在这种情况下,也用图4所示的晶片处理履历信息294检测位于处理室140内的晶片W的处理阶段,判断该晶片W的处理是否是在蚀刻工序中停止。根据图4所示的晶片处理履历信息294,由于晶片ID132A-22的晶片W在第一处理室140A的蚀刻工序的处理途中基板处理装置100停止工作,所以可以判断该晶片W是在蚀刻工序中途停止处理的。When it is determined in step S521 that the wafer W in process in the processing chamber 140 is not stopped in the middle of the stabilization process, it is determined in step S523 whether the wafer W in process in the process chamber 140 is in the middle of the etching process. stop. In this case as well, the processing stage of the wafer W in the processing chamber 140 is detected using the wafer
在所述S523步骤中判断处理室140内的处理中途的晶片W是在蚀刻工序中途停止处理的情况下,在S524步骤中在稳定工序后实施该蚀刻工序的剩余处理。也就是进行处理室140内的排气处理后,进行抽真空,使处理室140内的压力为规定的压力,重新导入处理气体,施加高频电力来恢复等离子体,重新进行剩余时间的蚀刻。When it is determined in step S523 that the processing of wafer W in process chamber 140 is stopped during the etching process, the rest of the etching process is performed after the stabilization process in step S524. That is, after exhausting the processing chamber 140, vacuumize the processing chamber 140 to make the pressure inside the processing chamber 140 a predetermined pressure, reintroduce the processing gas, apply high-frequency power to restore the plasma, and restart the etching for the remaining time.
如图13(a)所示,在蚀刻工序中途停止处理的情况下,在该晶片W中由于蚀刻处理正在进行到中途,基本上只进行剩余时间TPR的蚀刻处理即可。但是,在该情况下,由于蚀刻处理一度被中断,重新通过稳定工序进行排气处理后,由于导入新的处理气体进行等离子体化,要考虑等离子体状态在蚀刻处理的中断前和中断后不能完全相同的情况。因此,在晶片W的剩余处理中,可以设定图13(b)所示那样的补充蚀刻时间TA。因此,在图13(b)所示那样的晶片W的剩余处理中,在因基板处理装置100的异常造成工作停止时(处理中断时)的蚀刻处理的剩余时间TPR中加上补充蚀刻时间TA,只进行此时间的蚀刻处理。该补充蚀刻时间TA在晶片W的处理工序(处理方法)中作为复原处理的方法,操作人员可以预先在存储装置290中利用输入输出装置260的操作自由设定,也可以在实施复原处理时操作人员用输入输出装置260输入。As shown in FIG. 13( a ), when the process is stopped in the middle of the etching process, since the etching process is in progress on the wafer W, basically only the etching process for the remaining time T PR should be performed. However, in this case, since the etching process is once interrupted, after the exhaust process is performed again through the stabilization process, and a new process gas is introduced to perform plasma formation, it is considered that the state of the plasma cannot be changed before and after the interruption of the etching process. Exactly the same situation. Therefore, in the remaining processing of the wafer W, the additional etching time T A as shown in FIG. 13( b ) can be set. Therefore, in the remaining processing of the wafer W as shown in FIG. 13( b ), the supplementary etching time is added to the remaining time T PR of the etching process when the operation is stopped due to an abnormality of the substrate processing apparatus 100 (when the process is interrupted). T A , only the etching process at this time is performed. This supplementary etching time T A is used as a method of recovery processing in the processing steps (processing methods) of the wafer W, and the operator can freely set it in the
此外,在本实施方式的晶片W的剩余处理中,根据图4所示的晶片处理履历信息294求出蚀刻处理的剩余时间TPR,在此蚀刻处理的剩余时间TPR中,在需要的情况下加上补充蚀刻时间TA,将这些时间作为剩余处理时间,对只进行该剩余处理时间的蚀刻处理的情况进行说明,但该剩余处理时间未必需要根据图4所示的晶片处理履历信息294求出。例如,将处理室140A~140F中的一个(例如处理室140F)作为缺陷检查室来构成,将在蚀刻工序中途停止处理的晶片W送入缺陷检查室,在缺陷检查室检测晶片W的处理状态(例如在晶片W上用蚀刻处理形成的孔洞底的蚀刻残渣量等),根据该检测的结果可以设定蚀刻处理的剩余处理时间(例如TPR+TA)。在缺陷检查室有电子显微镜等的检测装置,根据对该缺陷检查室内的晶片W用电子显微镜等拍照,可以根据得到的电子图象来检测晶片W的处理状态。In addition, in the remaining processing of the wafer W in this embodiment, the remaining time T PR of the etching process is obtained from the wafer
此外,在所述蚀刻工序中预先实施的稳定工序也可以实施预先在晶片W的处理工序(处理方法)中的稳定工序TS,也可以实施区别于晶片W的处理工序(处理方法)另外设定的晶片挽救处理时的稳定工序TS’。这种情况下,例如向下部电极等施加的高频电压可以以分段施加的方式来设定。特别是施加较高的高频电压的情况下,通过分段施加,例如可以防止在处理室140内产生微粒。这样的高频电压施加方法例如可以通过分段的电压值和作用该电压的时间等进行设定。In addition, the stabilizing step performed in advance in the etching step may also be performed in advance in the stabilizing step T S in the processing step (processing method) of the wafer W, or may be performed separately from the processing step (processing method) of the wafer W. A stable process T S ' during a given wafer salvage process. In this case, for example, the high-frequency voltage to be applied to the lower electrode or the like can be set in a divided manner. In particular, in the case of applying a relatively high high-frequency voltage, generation of particles in the processing chamber 140 can be prevented, for example, by applying it in stages. Such a high-frequency voltage application method can be set by, for example, the voltage value of the step, the time for applying the voltage, and the like.
然后,若在S524步骤中的处理结束,也就是若蚀刻工序的剩余处理结束,则在S527步骤中继续此后的处理,在S528步骤中判断该处理室140的剩余处理是否结束,在判断剩余处理没有结束的情况下,返回在S527步骤中的处理。作为此后的处理,在如图13(b)所示的处理中途的晶片W的剩余处理中,在蚀刻工序结束后继续实施结束工序。这样,若全部工序结束,则通过进行排气处理和压力控制等,调整处理室140内的状态后,将处理完的晶片W取出。然后,在S528步骤中判断该处理室140中的剩余处理结束的情况下,一系列的对处理中途的晶片的处理结束,返回至图10所示的处理室内的晶片挽救处理。Then, if the processing in the S524 step is finished, that is, if the remaining processing of the etching process is finished, the subsequent processing is continued in the S527 step, and whether the remaining processing of the processing chamber 140 is judged in the S528 step is completed. If not finished, return to the processing in step S527. As subsequent processing, in the remaining processing of the wafer W in the middle of the processing as shown in FIG. 13( b ), the finishing step is continued after the etching step is completed. In this manner, when all the processes are completed, the processed wafer W is taken out after the state in the processing chamber 140 is adjusted by performing exhaust processing, pressure control, and the like. Then, when it is judged in step S528 that the remaining processing in the processing chamber 140 is completed, a series of processing of the wafer in the middle of processing is completed, and the process returns to the wafer salvage processing in the processing chamber shown in FIG. 10 .
在所述S523步骤中判断处理室140内的处理中途的晶片W不是在蚀刻工序中途停止处理的情况下,在S525步骤中判断处理室140内的处理中途的晶片W是否是在结束工序中途停止处理的。这种情况下,例如也用图4所示的晶片处理履历信息294检测位于处理室140内的晶片W的处理阶段,判断该晶片W的处理阶段是否是在结束工序中途停止的。When it is determined in the step S523 that the processing of the wafer W in the processing chamber 140 is not stopped in the middle of the etching process, it is determined in the step S525 whether the wafer W in the process of processing in the processing chamber 140 is stopped in the middle of the finishing process. processed. In this case, for example, the processing stage of the wafer W in the processing chamber 140 is detected using the wafer
在S525步骤中判断处理室140内的处理中途的晶片W是在结束工序中途停止处理的情况下,在S526步骤中,在稳定工序后实施该结束工序的剩余处理。也就是进行在处理室140内的排气处理后,进行抽真空,使处理室140内的压力成为规定压力,重新导入处理气体,施加高频电来恢复等离子体,重新实施剩余时间的终点处理等的结束工序。When it is determined in step S525 that the processing of the wafer W in the process chamber 140 is stopped during the end process, in step S526 the rest of the end process is performed after the stabilization process. That is, after the exhaust process in the processing chamber 140 is performed, the vacuum is evacuated to make the pressure in the processing chamber 140 a predetermined pressure, the processing gas is re-introduced, the plasma is restored by applying high-frequency electricity, and the end-point processing of the remaining time is re-executed. Waiting for the end of the process.
例如,如图14(a)所示那样在结束工序中途停止处理的情况下,如图14(b)所示,只进行该结束工序中的终点处理的剩余时间TER的终点处理。也就是将结束工序的剩余时间TER经过的时刻作为终点,结束此前的蚀刻工序中的蚀刻处理。For example, when the processing is stopped in the middle of the end process as shown in FIG. 14( a ), as shown in FIG. 14( b ), only the end processing of the remaining time TER of the end processing in the end process is performed. That is, the etching process in the preceding etching process is terminated with the elapse of the remaining time TER of the completion process as the end point.
然后,若在S525步骤中的处理结束,也就是若结束工序结束,则在S527步骤中继续此后的处理,在S528步骤中判断该处理室140的剩余处理是否结束,在判断剩余处理没有结束的情况下,返回到在S527步骤中的处理。作为此后的处理,在如图14(b)所示的处理中途的晶片W的剩余处理中,由于通过结束工序结束,而全部的工序结束,所以通过进行排气处理和压力控制等调整处理室140内的状态后,取出处理完的晶片W。然后,在S528步骤中判断该处理室140中的剩余处理结束的情况下,一系列的对处理中途的晶片的处理结束,返回至图10所示的处理室内的晶片挽救处理。Then, if the processing in the S525 step ends, that is, if the end process ends, then continue the processing thereafter in the S527 step, and judge whether the remaining processing of the processing chamber 140 ends in the S528 step, if it is judged that the remaining processing has not ended In this case, return to the processing in step S527. As subsequent processing, in the remaining processing of the wafer W in the middle of the processing as shown in FIG. After the state in 140, the processed wafer W is taken out. Then, when it is judged in step S528 that the remaining processing in the processing chamber 140 is completed, a series of processing of the wafer in the middle of processing is completed, and the process returns to the wafer salvage processing in the processing chamber shown in FIG. 10 .
然而,作为所述那样的终点处理有各种各样的方法。例如有将规定的终点时间的经过时刻作为终点,使蚀刻处理结束的方法(第一终点处理方法),根据等离子体状态、用终点检测方法检测的终点,使蚀刻处理结束的方法(第二终点处理方法),在用所述终点检测方法检测出终点的情况下,在该时刻使蚀刻处理结束,在没有检测出终点而经过规定的终点时间的情况下,以该经过的时刻使蚀刻处理结束的方法(第三终点处理方法)等。此外,作为这样的终点检测方法,除了根据在处理室140内激发的等离子体发光向量的变化检测的方法以外,还有将来自光源的光向晶片W照射,根据其反射光的衍射光的变化进行检测的方法。However, there are various methods for end-point processing as described above. For example, there is a method of ending the etching process with the elapsed time of a predetermined end point time as the end point (the first end point processing method), and a method of ending the etching process based on the plasma state and the end point detected by the end point detection method (the second end point method). processing method), when the endpoint is detected by the endpoint detection method, the etching process is terminated at that time, and when the predetermined endpoint time has elapsed without the endpoint being detected, the etching process is terminated at the elapsed time method (the third endpoint processing method), etc. In addition, as such an endpoint detection method, in addition to a method based on a change in the light emission vector of the plasma excited in the processing chamber 140, there is also a method based on a change in diffracted light of the reflected light by irradiating light from a light source onto the wafer W. method of detection.
本实施方式的图11所示的晶片挽救处理可以在包括任何终点处理的结束工序中使用。例如,如所述第一终点处理方法和第三终点处理方法那样,包括利用经过规定的终点时间确定终点的处理的情况下,预先设定所述规定的终点时间(例如图14中的TE),所以,若知道工作停止时间TS,则可以求出结束工序的剩余时间TER。因此,如上所述,将经过结束工序的剩余时间TER作为终点,使蚀刻处理结束。这种情况下,在第三终点处理方法中不进行用等离子体状态等的终点的检测。The wafer salvage process shown in FIG. 11 of this embodiment can be used in any finishing process including any finishing process. For example, in the case of including processing to determine the end point by using a predetermined end point time elapsed like the first end point processing method and the third end point processing method, the predetermined end point time (for example, T E in FIG. 14 ) is set in advance. ), so if the work stop time T S is known, the remaining time T ER for the end process can be calculated. Therefore, as described above, the etching process is terminated with the elapse of the remaining time T ER of the end process as an end point. In this case, detection of an endpoint using a plasma state or the like is not performed in the third endpoint processing method.
与此相反,在第二终点处理方法的情况下,蚀刻处理的终点由于专门根据等离子体状态和晶片状态进行检测,所以不是预先设定用于确定所述终点的规定的终点时间(例如图14中的TE)的原因。在这种情况下,例如在进行各晶片W的结束工序时,测量终点时间后预先存储到存储器等中,在因基板处理装置100的异常而停止工作时,将此前的各晶片W的终点时间的平均值作为实施挽救处理的晶片W的终点时间,根据该终点时间可以计算出结束工序的剩余时间TER。In contrast, in the case of the second endpoint processing method, since the endpoint of the etching process is detected exclusively based on the state of the plasma and the state of the wafer, a prescribed endpoint time for determining the endpoint is not set in advance (for example, FIG. 14 The reason for T E in . In this case, for example, when the end process of each wafer W is performed, the end time is measured and stored in a memory or the like in advance, and when the operation of the
其中,对于在所述结束工序之前实施的稳定工序,与在所述蚀刻工序之前实施的稳定工序相同,在晶片W的处理工序(处理方法)中也可以实施预先设定的稳定工序TS,但是也可以实施区别于晶片W的处理工序(处理方法)而另外设定的晶片挽救处理时的稳定工序TS’。这种情况下,例如向下部电极施加的高频电压可以以分段施加的方式设定。Wherein, the stabilizing step performed before the finishing step is the same as the stabilizing step performed before the etching step, and a predetermined stabilizing step T S may also be carried out in the processing step (processing method) of the wafer W, However, it is also possible to implement the stabilization step T S ' during the wafer salvage process which is set separately from the processing step (processing method) of the wafer W. In this case, for example, the high-frequency voltage to be applied to the lower electrode can be set to be applied in stages.
这样,若所述一系列的处理室140内的晶片挽救处理结束,则返回到图5所示的主程序的处理。也就是在图5所示的S150步骤中判断输送中的晶片W是否全部被回收。也就是判断利用在S200步骤~S500步骤的各晶片挽救处理进行处理的晶片W是否送入输送始点的盒容器132而全部的晶片被回收。在S150步骤中判断还没有将全部的晶片W回收的情况下,返回到S110的处理,在判断将全部晶片回收的情况下,转到下一个装置内状态复原处理(S160步骤中、S170步骤中)的处理。In this way, when the series of wafer salvage processing in the processing chamber 140 is completed, the processing returns to the main routine shown in FIG. 5 . That is, in step S150 shown in FIG. 5, it is judged whether or not all the wafers W being conveyed have been recovered. That is, it is judged whether or not the wafer W processed by each wafer salvage process in steps S200 to S500 is carried into the cassette container 132 at the transport starting point and all the wafers are recovered. In the case of judging in the S150 step that all wafers W have not been recovered, return to the process of S110, and in the case of judging that all the wafers are recovered, go to the next device state recovery process (in the step S160, in the step S170) ) processing.
(装置内状态复原处理)(Status restoration processing in the device)
在图5所示的复原处理中,作为装置内状态复原处理,例如在S160步骤中实施基板处理装置100的各室的清理处理。也就是例如对输送单元120内、共用输送室150内、负载锁定室160M、160N内、各处理室140A~140F内等各室实施清理处理。作为对各室的清理处理,例如导入吹扫气体(例如N2气体),进行使抽真空和向大气开放重复规定次数的清理处理(例如NPPC:Non-Plasma Particle Cleaning)。去除在这些室内的微粒,将各室内调整到可以进行晶片处理的状态。此外,作为清理处理,并不限定于所述处理,也可以适用于用基板处理装置自动进行的众所周知的清理处理。In the restoration processing shown in FIG. 5 , as the state restoration processing in the apparatus, cleaning processing of each chamber of the
然后,在S170步骤中进行所述各室内的微粒测量处理。例如假设在盒容器132C中收容微粒测量用的晶片,此微粒测量用的晶片从盒容器132C中取出,并再次送入各室,此后,返回到微粒测量室134,在微粒测量室134内测量在微粒测量用的晶片上附着的微粒量。然后,将各室的微粒量的测量结果例如存储到记录等中。该记录例如可以存储到控制部200的存储手段290和存储器等中。Then, in step S170, the microparticle measurement processing in each of the chambers is performed. For example, assuming that a wafer for particle measurement is accommodated in the
若所述各室的微粒测量处理结束,则进行对回收到盒容器132中的未处理的晶片再处理。具体地说,在S180步骤中判断在被回收到盒容器132中的未处理的晶片W中是否残留有未处理的晶片。具体地说,例如利用图3所示的晶片收容信息292,判断被回收到盒容器132中的晶片W中是否残留有未处理的晶片。例如采用图3所示的晶片收容信息292,晶片ID132A-23的晶片由于复原处理是“有”,而且晶片处理状况是“没有处理”,所以可以判断该晶片W是复原处理的晶片W,是处于未处理阶段。After the particle measurement process in each chamber is completed, the unprocessed wafer collected into the cassette container 132 is reprocessed. Specifically, it is determined in step S180 whether or not unprocessed wafers remain among the unprocessed wafers W collected into the cassette container 132 . Specifically, for example, it is determined whether or not unprocessed wafers remain among the wafers W collected in the cassette container 132 by using the
在所述S180步骤中判断残留有未处理的晶片的情况下,在S190步骤中进行未处理晶片的再处理(未处理晶片的再处理工序)。其中,对于未处理的晶片,根据该晶片W的处理信息(处理方法),从最初开始实施晶片处理。这样,未处理晶片W的再处理再次被回收到盒容器132中,由于是在基板处理装置100的各室进行清理处理后而进行的,所以可以使未处理晶片W的处理与基板处理装置100的复原前一样进行。若这样的未处理晶片的再处理结束,则一系列复原处理也结束。When it is judged in step S180 that unprocessed wafers remain, reprocessing of unprocessed wafers is performed in step S190 (reprocessing step of unprocessed wafers). However, for an unprocessed wafer, wafer processing is performed from the beginning based on the processing information (processing method) of the wafer W. In this way, the reprocessing of the unprocessed wafer W is recovered in the cassette container 132 again, and since it is carried out after the cleaning process is performed in each chamber of the
其中,在所述实施方式中,对于基板处理装置100的各室的装置内状态复原处理在全部室的基板回收处理结束后,对再次进行各室的清理处理的情况举例进行了说明,但是未必限定于此,也可以在内各室进行基板回收处理和装置内状态复原处理。例如,在处理单元110内的晶片回收处理后立刻实施处理单元110内的清理处理,此外,也可以在共用输送室150内的晶片回收处理后立刻实施共用输送室150内的清理处理。处理室140内的清理处理也可以在晶片W滞留的状态下直接进行。因此,在处理室140内处理被中断时,可以在处理室140内的清理的同时去除漂浮后落到晶片W上的微粒。In the above-mentioned embodiment, the case where the cleaning process of each chamber is carried out again after the completion of the substrate recovery process of all the chambers in the apparatus state recovery process of each chamber of the
此外,所述实施方式的复原处理在异常解除后,可以通过投入电源自动实施,此外,例如使是否实施复原处理的选择画面在控制部200的显示装置250上显示,可以通过操作人员用输入输出装置260的操作选择后实施。此外,复原处理不仅仅是全部,也可以选择一部分来实施,例如在基板回收处理中也可以分别选择输送单元内的晶片挽救处理(S200步骤中)、负载锁定室内的晶片挽救处理(S300)、共用输送室内的晶片挽救处理(S400)、处理室内的晶片挽救处理(S500)来实施。In addition, the restoration process of the above-mentioned embodiment can be automatically implemented by turning on the power after the abnormality is resolved. In addition, for example, the selection screen for whether to perform the restoration process is displayed on the
若采用本实施方式的基板处理装置100,则在基板处理装置100的工作中因产生异常而停止工作时,在该异常解除后作为基板处理装置100的状态复原的复原处理,对在基板处理装置的各室内滞留的晶片W对应于直到工作停止时实施的处理阶段,进行相应的挽救处理,将晶片W自动回收到盒容器132中(基板回收工序),同时通过自动进行基板处理装置100的各室内的清理处理等,使各室的状态复原(装置内状态复原工序),可以自动进行使基板处理装置100的状态复原的处理。这样可以节省基板处理装置100的复原处理的时间和工夫。此外,在基板处理装置100因产生异常停止工作时,通过对应于晶片W的处理阶段进行正确的挽救处理,可以尽可能多地挽救晶片W。According to the
其中,所述实施方式的复原处理对于具有微粒测量室134的基板处理装置100进行了说明,也可以适用于不具有微粒测量室134的基板处理装置100。这种情况下,也可以省略微粒测量室134中的晶片W和各室的微粒测量。例如对于图5所示的S170步骤、图6所示的S210~S230步骤、图7所示的S320~S340步骤、图8所示的S440~S460步骤、图10所示的S560~S580步骤也分别可以省略。The recovery process in the above-mentioned embodiment has been described for the
此外,对于用所述实施方式详细叙述的本发明,即适用于由多个器具构成的系统,也适合由一个器具构成的装置。向系统或者装置提供存储实现所述实施方式功能的软件程序的存储介质,该系统或者装置的计算机(或者CPU和MPU)通过读取收容存储介质等介质的程序后实施,当然也可以实现本发明。In addition, the present invention described in detail using the above-mentioned embodiments is applicable to a system composed of a plurality of devices, and is also applicable to a device composed of a single device. Provide a system or device with a storage medium that stores a software program that implements the functions of the embodiments, and the computer (or CPU and MPU) of the system or device implements the program after reading the program that contains the storage medium and other media. Of course, the present invention can also be realized. .
这种情况下,从存储介质的介质读取的程序本身实现所述的实施方式的功能,作为存储此程序的存储介质等的介质,例如可以使用软(注册商标)盘、硬盘、光盘、光磁盘、CD-ROM、CD-R、CD-RW、DVD-ROM、DVD-RAM、DVD-RW、DVD+RW、磁带、非易失性存储器插件板、ROM或者通过网络的下载等。In this case, the program itself read from the storage medium realizes the functions of the above-described embodiments, and as a medium such as a storage medium storing the program, for example, a floppy (registered trademark) disk, a hard disk, an optical disk, an optical disk, etc. can be used. Disk, CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW, magnetic tape, non-volatile memory card, ROM, or download via the Internet, etc.
此外,通过执行计算机读出的程序,不仅可以实现所述的实施方式的功能,以该程序的指示为基础,在计算机中工作的OS等进行实际处理的一部分或者全部,用该处理实现所述实施方式的功能的情况也包括在本发明中。In addition, by executing the program read by the computer, not only the functions of the above-described embodiments can be realized, but also based on the instructions of the program, the OS or the like operating in the computer performs a part or all of the actual processing, and realizes the above-mentioned embodiment by this processing. The case of the function of the embodiment is also included in the present invention.
此外,从存储介质的介质中读出的程序,写入到插入在计算机的功能扩张插件板或者具有连接在计算机上的功能扩张部件的存储器后,根据该程序的指示,该功能扩张插件板和具有功能扩张部件的CPU等进行实际处理的一部分或者全部,利用该处理实现所述实施方式的功能的情况也包括在本发明内。In addition, after the program read from the medium of the storage medium is written into the function expansion plug-in board inserted into the computer or the memory having the function expansion part connected to the computer, according to the instruction of the program, the function expansion plug-in board and It is also included in the present invention that a CPU or the like having a function expansion means performs part or all of actual processing, and realizes the functions of the above-described embodiments by using this processing.
上面,参照附图对本发明的优选实施方式进行了说明,但是本发明当然并不限定在所述例子中。不言而喻,本领域技术人员在权利要求书记载的范围内可以想到各种变化例或者修正例,可以理解成这些当然也属于本发明的技术范围内。Preferred embodiments of the present invention have been described above with reference to the drawings, but the present invention is of course not limited to the examples described above. It is needless to say that those skilled in the art can conceive of various changes or amendments within the scope described in the claims, and it can be understood that these naturally also belong to the technical scope of the present invention.
例如,在所述实施方式中,以在共用输送室周围连接多个处理室的所谓组合台型基板处理装置为例对处理单元进行了说明,但是,例如除了将负载锁定室连接在处理室上,将多个处理单元并排连接在输送单元上的所谓串联型基板处理装置等以外,本发明可以适用于基板装置因产生异常而停止工作的各种型式的基板处理装置。For example, in the above-mentioned embodiments, the processing unit has been described by taking a so-called multi-stage substrate processing apparatus in which a plurality of processing chambers are connected around a common transfer chamber as an example. In addition to the so-called tandem type substrate processing apparatus in which a plurality of processing units are connected side by side to the transfer unit, the present invention can be applied to various types of substrate processing apparatuses in which the operation of the substrate apparatus stops due to an abnormality.
工业实用性Industrial Applicability
本发明可以适用于对被处理基板实施规定处理的基板处理装置因产生异常而停止工作时的基板处理装置的复原处理方法、基板处理装置、程序。The present invention can be applied to a recovery processing method, substrate processing apparatus, and program of a substrate processing apparatus when a substrate processing apparatus that performs predetermined processing on a substrate to be processed stops operating due to an abnormality.
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005016174 | 2005-01-24 | ||
JP2005016174A JP4569956B2 (en) | 2005-01-24 | 2005-01-24 | Substrate processing apparatus restoration processing method, substrate processing apparatus, and program |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1819112A CN1819112A (en) | 2006-08-16 |
CN100383919C true CN100383919C (en) | 2008-04-23 |
Family
ID=36919041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100069197A Expired - Fee Related CN100383919C (en) | 2005-01-24 | 2006-01-24 | Restoration processing method of substrate processing apparatus, substrate processing apparatus |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4569956B2 (en) |
KR (1) | KR100724173B1 (en) |
CN (1) | CN100383919C (en) |
TW (1) | TWI382482B (en) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4388563B2 (en) | 2007-03-27 | 2009-12-24 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing apparatus, and computer-readable storage medium |
TWI533394B (en) | 2007-06-21 | 2016-05-11 | 尼康股份有限公司 | Conveying method and conveying device |
JP4503088B2 (en) * | 2007-11-05 | 2010-07-14 | 株式会社日立国際電気 | Substrate processing apparatus and display method of substrate processing apparatus |
JP5511190B2 (en) * | 2008-01-23 | 2014-06-04 | 株式会社荏原製作所 | Operation method of substrate processing apparatus |
JP5635270B2 (en) * | 2009-02-13 | 2014-12-03 | 株式会社日立国際電気 | Substrate processing apparatus, substrate processing system, display method of substrate processing apparatus, parameter setting method of substrate processing apparatus, and recording medium |
JPWO2011078270A1 (en) * | 2009-12-24 | 2013-05-09 | 株式会社アルバック | Operation method of vacuum processing equipment |
CN103382554B (en) * | 2012-05-04 | 2015-08-19 | 无锡华润上华科技有限公司 | Aumospheric pressure cvd board abnormality monitoring method and system |
JP6169365B2 (en) | 2013-02-07 | 2017-07-26 | 株式会社日立国際電気 | Semiconductor device manufacturing method and substrate processing apparatus |
JP6224359B2 (en) | 2013-06-20 | 2017-11-01 | 株式会社Screenホールディングス | Schedule creation method and schedule creation program for substrate processing apparatus |
CN104699019B (en) * | 2013-12-09 | 2019-09-17 | 中芯国际集成电路制造(上海)有限公司 | Board restores checking system and board restores the method for inspection |
JP6165658B2 (en) * | 2014-03-20 | 2017-07-19 | 株式会社東芝 | Manufacturing apparatus management system and manufacturing apparatus management method |
JP6259698B2 (en) * | 2014-03-28 | 2018-01-10 | 株式会社荏原製作所 | Substrate processing method |
US10024825B2 (en) * | 2014-12-26 | 2018-07-17 | Axcelis Technologies, Inc. | Wafer clamp detection based on vibration or acoustic characteristic analysis |
KR102063322B1 (en) | 2016-05-27 | 2020-01-08 | 세메스 주식회사 | Apparatus and Method for treating a substrate |
JP6773497B2 (en) * | 2016-09-20 | 2020-10-21 | 株式会社Screenホールディングス | Board processing management device, board processing management method and board processing management program |
CN106373913B (en) * | 2016-10-31 | 2019-02-19 | 北京北方华创微电子装备有限公司 | A kind of method of semiconductor vertical furnace equipment abnormal restoring |
CN107507788B (en) * | 2017-07-21 | 2019-11-08 | 志圣科技(广州)有限公司 | Wafer processing machine and its processing and treating method |
JP6435388B2 (en) * | 2017-10-04 | 2018-12-05 | 株式会社Screenホールディングス | Substrate processing method and substrate processing apparatus |
KR102204024B1 (en) * | 2018-03-15 | 2021-01-18 | 세메스 주식회사 | Apparatus and Method for treating substrate with unit |
JP7109287B2 (en) | 2018-07-09 | 2022-07-29 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, AND CONTROL PROGRAM |
JP7113722B2 (en) * | 2018-11-05 | 2022-08-05 | 東京エレクトロン株式会社 | Substrate processing apparatus, method for opening and closing lid of substrate container, and program |
JP7303678B2 (en) | 2019-07-08 | 2023-07-05 | 東京エレクトロン株式会社 | Substrate processing system and substrate processing method |
CN110983301B (en) * | 2019-12-23 | 2022-08-05 | 通威太阳能(安徽)有限公司 | High-frequency automatic plating supplementing method for P equipment of coated pipe |
JP2021166275A (en) | 2020-04-08 | 2021-10-14 | 株式会社ディスコ | Processing equipment and processing method |
CN113644005A (en) | 2020-05-11 | 2021-11-12 | 中微半导体设备(上海)股份有限公司 | Semiconductor processing system |
JP7539045B2 (en) | 2020-12-03 | 2024-08-23 | パナソニックIpマネジメント株式会社 | Plasma treatment method |
US20220384223A1 (en) * | 2021-05-27 | 2022-12-01 | Tokyo Electron Limited | Board processing equipment and recovery processing method |
CN113658885B (en) * | 2021-08-12 | 2023-09-08 | 长鑫存储技术有限公司 | Method and device for determining preparation chamber |
CN114547219B (en) * | 2021-12-16 | 2025-06-17 | 北京百度网讯科技有限公司 | Data processing method, device, equipment and storage medium |
KR102734483B1 (en) | 2022-11-10 | 2024-11-27 | 세메스 주식회사 | Substrate processing method and substrate processing apparatus |
CN116159809A (en) * | 2022-12-28 | 2023-05-26 | 深圳市纳设智能装备有限公司 | Wafer Transfer Method |
KR102607442B1 (en) | 2023-06-19 | 2023-11-29 | 주식회사 유니온스틸코퍼레이션 | Scrap compaction and cutting device with improved compaction performance |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330185A (en) * | 1998-05-07 | 1999-11-30 | Matsushita Electron Corp | Manufacturing equipment for semiconductor device and its manufacture |
TW454225B (en) * | 1998-10-19 | 2001-09-11 | Speedfam Ipec Corp | Catastrophic error recovery apparatus and associated methods |
JP2002261148A (en) * | 2001-03-05 | 2002-09-13 | Tokyo Electron Ltd | Treating system and preheating method of object to be treated |
JP2002270481A (en) * | 2001-03-08 | 2002-09-20 | Olympus Optical Co Ltd | System for recovering sample automatically |
CN1451174A (en) * | 2000-07-04 | 2003-10-22 | 东京毅力科创株式会社 | Operation monitoring method for treatment apparatus |
US6732006B2 (en) * | 2002-02-06 | 2004-05-04 | Asm International Nv | Method and system to process semiconductor wafers |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4757459A (en) * | 1986-05-29 | 1988-07-12 | Cincinnati Milacron Inc. | Apparatus and method for programming a computer operated robot arm using macro instructions |
US4928221A (en) * | 1988-04-11 | 1990-05-22 | Westinghouse Electric Corp. | Part program generating system |
JP2600237Y2 (en) * | 1993-03-11 | 1999-10-04 | 日新電機株式会社 | Air lock room |
JPH0729958A (en) * | 1993-07-14 | 1995-01-31 | Hitachi Ltd | Semiconductor manufacturing equipment |
US5570990A (en) * | 1993-11-05 | 1996-11-05 | Asyst Technologies, Inc. | Human guided mobile loader stocker |
JP3328869B2 (en) * | 1995-06-27 | 2002-09-30 | 東京エレクトロン株式会社 | Processing method and processing apparatus |
JP3936030B2 (en) * | 1997-06-23 | 2007-06-27 | 東京エレクトロン株式会社 | Recovery method of workpieces |
US6216051B1 (en) * | 1998-05-04 | 2001-04-10 | Nec Electronics, Inc. | Manufacturing backup system |
JP2001093791A (en) * | 1999-09-20 | 2001-04-06 | Hitachi Ltd | Method of operating vacuum processing apparatus and method of processing wafer |
JP2001338964A (en) * | 2000-05-26 | 2001-12-07 | Hitachi Ltd | Sample processing apparatus and processing method |
JP2004319961A (en) * | 2003-03-31 | 2004-11-11 | Tokyo Electron Ltd | Substrate processing equipment, substrate processing method, and program for carrying out its method |
-
2005
- 2005-01-24 JP JP2005016174A patent/JP4569956B2/en not_active Expired - Fee Related
-
2006
- 2006-01-23 KR KR1020060006950A patent/KR100724173B1/en not_active Expired - Fee Related
- 2006-01-23 TW TW095102491A patent/TWI382482B/en not_active IP Right Cessation
- 2006-01-24 CN CNB2006100069197A patent/CN100383919C/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330185A (en) * | 1998-05-07 | 1999-11-30 | Matsushita Electron Corp | Manufacturing equipment for semiconductor device and its manufacture |
TW454225B (en) * | 1998-10-19 | 2001-09-11 | Speedfam Ipec Corp | Catastrophic error recovery apparatus and associated methods |
CN1451174A (en) * | 2000-07-04 | 2003-10-22 | 东京毅力科创株式会社 | Operation monitoring method for treatment apparatus |
JP2002261148A (en) * | 2001-03-05 | 2002-09-13 | Tokyo Electron Ltd | Treating system and preheating method of object to be treated |
JP2002270481A (en) * | 2001-03-08 | 2002-09-20 | Olympus Optical Co Ltd | System for recovering sample automatically |
US6732006B2 (en) * | 2002-02-06 | 2004-05-04 | Asm International Nv | Method and system to process semiconductor wafers |
Also Published As
Publication number | Publication date |
---|---|
JP4569956B2 (en) | 2010-10-27 |
CN1819112A (en) | 2006-08-16 |
KR20060085590A (en) | 2006-07-27 |
TW200636899A (en) | 2006-10-16 |
KR100724173B1 (en) | 2007-05-31 |
JP2006203145A (en) | 2006-08-03 |
TWI382482B (en) | 2013-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100383919C (en) | Restoration processing method of substrate processing apparatus, substrate processing apparatus | |
US7364922B2 (en) | Automated semiconductor wafer salvage during processing | |
JP6368453B2 (en) | Substrate processing apparatus, data analysis method and program for substrate processing apparatus | |
KR100845990B1 (en) | Substrate processing apparatus, history information recording method, history information recording program, and history information recording system | |
JP4673548B2 (en) | Substrate processing apparatus and control method thereof | |
US8377216B2 (en) | Vacuum processing apparatus and vacuum processing method | |
CN1811622A (en) | Method of inspecting substrate processing apparatus, and storage medium storing inspection program for executing the method | |
CN100397569C (en) | Substrate processing apparatus, control method of substrate processing apparatus | |
US8731698B2 (en) | Substrate receiving method and controller | |
JP2005286102A (en) | Vacuum processing apparatus and vacuum processing method | |
CN100411130C (en) | Substrate processing apparatus and substrate transfer method of substrate processing apparatus | |
JP4931381B2 (en) | Substrate processing apparatus, substrate processing apparatus control method, and program | |
JP5268659B2 (en) | Substrate storage method and storage medium | |
TWM648870U (en) | One-stop plasma fabrication system | |
JP4757499B2 (en) | Processing apparatus and processing method | |
JP4822048B2 (en) | Pre-maintenance method for semiconductor manufacturing equipment | |
JP3870649B2 (en) | Manufacturing method of silicon epitaxial wafer | |
CN119275125A (en) | One-stop plasma process system and process method thereof | |
JPH07335708A (en) | Vacuum processing device | |
JP5386137B2 (en) | Sample measuring device | |
JPWO2006070630A1 (en) | Substrate processing apparatus and substrate transfer method | |
JP2002353286A (en) | Electronic device manufacturing apparatus and transport control method thereof | |
JP2002313774A (en) | Method and device for manufacturing device | |
KR20070001637A (en) | Substrate processing apparatus and method | |
JP2002237508A (en) | Substrate vacuum processing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080423 |
|
CF01 | Termination of patent right due to non-payment of annual fee |