CN100352317C - 电子元件安装板、电子元件模块、制造电子元件安装板的方法及通信设备 - Google Patents
电子元件安装板、电子元件模块、制造电子元件安装板的方法及通信设备 Download PDFInfo
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- CN100352317C CN100352317C CNB031409237A CN03140923A CN100352317C CN 100352317 C CN100352317 C CN 100352317C CN B031409237 A CNB031409237 A CN B031409237A CN 03140923 A CN03140923 A CN 03140923A CN 100352317 C CN100352317 C CN 100352317C
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Abstract
一种陶瓷层压板,具有从板的主面穿过其内部的排热通孔。排热通孔中放置具有金属体和复合材料的传热体,在金属体和陶瓷层压板之间整个地或者部分地提供这种复合材料。所述复合材料的传热性高于空气,复合材料的热膨胀系数小于金属体。
Description
技术领域
本发明主要涉及用于比如无线电通信设备的传输模块类的无线电通信设备的高频部分电子元件安装板,以及使用这种安装板的电子元件模块。
背景技术
近年来,一系列天线开关双工器模块和功率放大器模块都被用在无线电通信设备的高频部分。现在参照附图讨论常规单个模块以及组合多个模块而成无线电通信设备高频部分的实例。
图5是表示普通无线电通信设备中使用天线开关双工器模块和功率放大器模块情况的方块图。图5中的标号406代表天线开关双工器模块,标号404代表功率放大器模块,标号405代表隔离器模块,标号407代表接收滤波器。
下面将讨论天线开关双工器模块、功率放大器模块和如此构成的无线电通信设备的工作情况。
首先,使用PIN二极管和由GaAs等构成的复合半导体IC组成所述天线开关双工器模块。使用由GaAs、InGaP等构成的复合半导体IC组成所述功率放大器模块。对于接收滤波器和隔离器模块,使用单个对应的元件。这些模块和分立元件都排列在一个印刷板上,并且经过诸如微形线条之类的接结实现电连接。
然而,由于上述结构是由分立模块和元件构成的,使无线电通信设备的微型化受到限制,并且难以减少分立结构的费用。进而,由于通过在印刷板上的接线进行连接,在高频时对于阻抗会产生扰动,不可能复现所期望的特性,并且需要调节的步骤。另外,印刷板上的接线会引起过大的负荷,而且要消耗较大的功耗。
为了解决这些问题,如图6a的俯视图和图6b的侧视剖面图所示,提出一种无线电通信模块,其中把诸如天线开关601、功率放大器602和VCO 603之类的分立模块以及半导体元件都用倒装法安装在一个厚膜多层板600上,该多层板包括钝化元件604(如日本专利公开NO.2002-261643)。这里参照引用日本专利公开NO.2002-261643全文的整个公开内容。
然而,在上述无线电通信模块中,并未考虑从像能产生大量热量的功率放大器602这样的元件所释放的热量。尤其是在使用陶瓷多层板作为厚膜多层板时,热量释放的问题是不容忽视的。
如图6b所示,利用实现电连接的通孔605排放安装在板上的元件的热量。但形成通孔会产生了下述问题。
通过在通孔内填充具有导电性或导热性,如铝这样的金属与板一起形成通孔605,提供这些通孔605,使其可以穿过用作电路板之基底的坯片(green sheet),随后再烘干这个坯片。
就此而言,当陶瓷在烘干期间收缩的时候,金属却因烘干的热量发生热膨胀。因此,当通孔的直径较小时,金属的直径却要增加。于是,当通孔的直径太小的时候,由于膨胀的金属在通孔上发生碎裂,导致制造期间的效率较低。
同时,当通孔的直径太小的时候,在完成烘干后的金属皱折和通孔之间出现间隙,使热量排放的效率较低。
发明内容
鉴于上述的问题,本发明的目的在于,提供一种热释放性能优异,制造时产率高的电子元件安装板及其制造方法,以及电子元件模块等,从而可以轻易实现较小的尺寸和较低的成本,以优选的可再现性以及无需调整地实现所期望的特性,并且通过抑制过大的损耗而实现低功耗。
本发明的第一方面是一种电子元件安装板,包括具有至少一个从板的主面穿过其内部之通孔的陶瓷层压板;
其中,在通孔内放置具有金属体和缓冲材料的传热体,在所述金属体和陶瓷层压板之间整个地或者部分地提供缓冲材料;并且
缓冲材料的传热性高于空气,缓冲材料的热膨胀系数小于金属体。
本发明的第二方面是一种电子元件安装板,包括具有至少一个从板的主面穿过其内部之通孔的陶瓷层压板;
其中,在所述通孔内放置具有金属体和缓冲材料的传热体,在所述金属体和陶瓷层压板之间整个地或部分地提供缓冲材料;并且
缓冲材料的传热性高于空气,缓冲材料的弹性大于金属体。
本发明的第三方面是按照所述第一和第二方面的电子元件安装板,其中,所述缓冲材料是包含至少一种热固化树脂的复合材料。
本发明的第四方面是按照所述第一和第二方面的电子元件安装板,其中,所述陶瓷层压板是具有相同种类或者不同种类陶瓷层的层压板。
本发明的第五方面是一种电子元件模块,包括:
按照第一到第四方面中任何一方面所述的电子元件安装板;和
安装在主面上的电子元件;
其中,使电子元件被连接,以便利用传热体来传导热量。
本发明的第六方面是按照所述第五方面的电子元件模块,其中所述电子元件在高频段工作。
本发明的第七方面是按照所述第五或第六方面的电子元件模块,其中所述电子元件是功率放大器。
本发明的第八方面是按照所述第七方面的电子元件模块,其中所述功率放大器包括化合物半导体功率放大器IC。
本发明的第九方面是按照所述第七方面的电子元件模块,还包括安装在主面上的天线转换电路。
本发明的第十方面是按照所述第九方面的电子元件模块,其中所述天线转换电路包括化合物半导体开关IC。
本发明的第十一方面是按照所述第五方面的电子元件模块,还包括设在所述叠层板内的叠层滤波器。
本发明的第十二方面是一种电子元件模块,包括:
板;
功率放大器,它设置在所述板的主面上,并在高频段工作;
板埋入型叠层隔离器,它包括所述板的一部分,并以集成方式构成。
本发明的第十三方面是按照所述第十二方面的电子元件模块,还包括散热片,所述散热片热连接到所述板埋入型叠层隔离器的轭铁上;
其中连接所述功率放大器,以便能够经过散热片利用轭铁传导热量。
本发明的第十四方面是按照所述第十三方面的电子元件模块,其中所述板埋入型叠层隔离器是具有共享磁路和多个电路的多频段型叠层隔离器。
本发明的第十五方面是按照所述第十三方面的电子元件模块,其中使用按照第一到第四方面中任何一方面所述的电子元件安装板作为所述的板;并且,
连接所述散热片,以便能够利用传热体传导热量。
本发明的第十六方面是一种通信设备,包括:
传输装置;
接收装置;
其中,把按照第五到第十五方面中任一方面的电子元件模块用于传输装置和/或接收装置。
本发明的第十七方面是一种制造电子元件安装板的方法,包括如下步骤:
在预定的坯片上打开至少一个通孔;
在第一预定温度下烘烤具有所开通孔的坯片,形成陶瓷层压板;
在所述通孔中安排金属体;
在所述金属体与通孔的内壁之间整个地或者部分地布置缓冲材料;
在第二预定温度下加热陶瓷层压板,所述板具有金属体,并在所述通孔内填充缓冲材料;
所述缓冲材料的传热性高于空气,热膨胀系数小于金属体。
本发明的第十八方面是一种制造电子元件安装板的方法,其中,包括如下步骤:
在预定的坯片上打开至少一个通孔;
在第一预定温度下烘烤具有所开的通孔的坯片,形成陶瓷层压板;
在所述通孔中安排金属体;
在所述金属体和通孔的内壁之间整个地或者部分地布置缓冲材料;
在第二预定温度下加热陶瓷层压板,所述板具有金属体,并在所述通孔内填充缓冲材料;
所述缓冲材料的传热性高于空气,弹性大于金属体。
附图说明
图1是以示意的方式表示本发明一种实施例的无线电通信设备之传输模块的方块图;
图2是用以说明所述本发明实施例无线电通信设备之传输模块的工作过程的剖面图;
图3a是表示制造所述本发明实施例之传热体步骤的示意图;
图3b是表示制造所述本发明实施例之传热体步骤的示意图;
图3c是表示制造所述本发明实施例之传热体步骤的示意图,表示沿图3b中A-A’线所取的截面;
图4是表示制造所述本发明实施例无线电通信设备之传输模块构思的分解透视图;
图5是表示普通无线电通信设备高频部分的方块图;
图6a是表示普通无线电通信模块的平面图;
图6b是表示普通无线电通信模块的侧视剖面图。
关于符号的描述:
1…陶瓷层压板 11、12…功率放大器
13…天线转换电路
具体实施方式
下面参照附图讨论本发明一种实施例的电子元件安装板和用于无线电通信设备并使用这种安装板的传输模块。
图1表示本发明的这种实施例无线电通信设备之传输模块的方块图结构的构思。虽然下面将要描述用于GSM/DCM/PCS的EDGE的便携式电话实例,但本发明的应用不限于这种实例。
图1中的标号1代表作为本发明电子元件安装板一个实例的陶瓷板,其中标号2代表GSM传输输入终端,标号3代表DCS/PCS传输输入终端,标号4代表GSM接收输出终端,标号5代表DCS接收输出终端,标号6代表PCS接收输出终端,标号7代表天线终端,标号8代表GSM监视终端,标号9代表DCS/PCS监视终端,标号10代表EDGE模块切换终端,标号11代表GSM功率放大器IC,标号12代表DCS/PCS功率放大器IC,标号13代表SP5T GaAs开关IC,标号14代表板埋入型叠层隔离器,标号15a、15b、15c代表内接叠层滤波器,标号16代表用于GSM监视器的耦合电容,标号17代表用于DCS/PCS监视器的耦合电容,标号18代表排热通孔,标号19代表天线。
在这种情况下,最好使用低温共焙陶瓷板(LTCC)作为陶瓷板1。对于板1,可以使用单层板和多层板这两种板。其中层迭具有不同介电常数之陶瓷片的不同种类的叠层LTCC是更为优选的。例如,可以从具有低介电常数(相对介电常数等于或小于20)的材料中选择镁橄榄石、氧化铝硼硅酸盐玻璃等,或者从具有高介电常数(相对介电常数大于20)的材料中选择Bi-Ca-Nb-O、Ba-Ti-O、[Zr(Mg,Zn,Nb)]TiO4+MnO2、Ba-Nd-Ti-O等作为陶瓷层压板1的材料。
进而,最好使用诸如GaAs-FET和InGaP-HBT之类的材料作为GSM功率放大器IC11和DCS/PCS功率放大器IC12的材料。对于GaAs开关IC13而言,FET结构或HEMT结构是优选的。虽然本实施例描述的是SP5T型,但也可能使用其它类型。例如,可以组合使用DP5T和一个双工器。在GSMTDSC/PCS的多个频段中,板埋入型叠层隔离器能够稳定GSM功率放大器IC11和DCS/PCS功率放大器的负载,并能进行隔离,从而保证低畸变特性。最好提供多个电路和一个共享的磁路以实现较小的尺寸和较低的成本。通过使用通孔(未示出)的折叠谐振器可以减小内接叠层滤波器15a、15b、15c的尺寸。此外,更为优选的是,在陶瓷板1的高介电常数陶瓷层中形成一个谐振器电极。
下面参照图1、2、3讨论具有上述结构之无线电通信设备的传输模块的工作情况。
首先,在图1中,通过GSM功率放大器IC11或DCS/PCS功率放大器IC12将从GSM传输输入终端2或DCS/PCS传输输入终端3输入的传输信号放大到特定的传输信号输出功率水平。这时,要对偏置点进行控制,以使GSM功率放大器IC11或DCS/PCS功率放大器IC12能够响应于加到EDGE模式切换终端10的控制信号,作为放大GMSK调制信号的饱和放大器工作,或者作为放大EDGE信号的线性放大器工作,并且要在每一种操作模式下都以最适宜的方式设定效率和畸变特性。
把每个功率放大器IC的输出输入到所述板埋入型叠层隔离器14中。设置用于GSM监视的耦合电容16和用于DCS/PCS监视的耦合电容17,以便从每个功率放大器IC取出一部分输出并监视输出功率水平。虽然可以使用定向耦合器,但由于每个功率放大器IC的输出都连接到板埋入型叠层隔离器14中,并因此可在本实施例中保证方向性,所以可以使用结构简单的耦合电容、较小的面积以及较低的成本。把板埋入型叠层隔离器14的输出输入到用作天线转换电路的SP5T GaAs开关IC13。虽然GaAs开关IC13用作天线转换电路,但也可以采用利用PIN二极管的开关电路和利用RF-MEMS开关的开关电路。
在传输操作期间,天线转换电路将传输信号的输出引导到天线终端,在接收操作期间,经过接收滤波器,把从天线19接收的接收信号输出到每个接收终端。可以使用叠层滤波器、SAW滤波器、BAW过滤器等作为接收滤波器。诸如天线终端和接收滤波器之类的部件与陶瓷层压板1(未示出)一起集成地构成。
在本实施例的无线电通信设备的传输模块中,用作天线转换电路的SP5T GaAs开关IC13,用作功率放大器的GSM功率放大器IC11和DCS/PCS功率放大器IC12,以及陶瓷层压板1都集成地构成。
在本实施例的结构中,功率放大器的输出端利用在陶瓷层压板的表面上或内层上形成的传输线或者直接地电连接到天线转换电路,或者经过板埋入型叠层隔离器电连接到天线转换电路。因此,与经过在印刷电路板上的传输线进行连接相比,有可能消除由过多的寄生分量引起的阻抗扰动,并且可以保证模块的整个特性,在特征的再现性方面不会有任何问题。
进而,由于是借助于短的接线和小的尺寸形成集成化的,过大的损耗因素不会进入,这样就能实现低功耗。这种结构对于减小电池负荷和延长诸如便携式电话之类的无线电通信设备的工作有明显的效果。
此外,由于使用陶瓷层压板集成所述结构,所以可以显著减小尺寸并同时降低成本。
顺便地,按照图1的结构,在功率放大器IC的热量排放方面会出现问题。按照本发明,使用板埋入型叠层隔离器14和排热通孔18来释放热量,从而使所述问题得到很好地解决。
参照图2,将进一步详细描述无线电通信设备的传输模块的结构。图2是表示本发明无线电通信设备之传输模块主要部分的剖面图。其中的标号201代表不同类型的陶瓷层压板,标号202代表板埋入型叠层隔离器,标号203代表磁铁,标号204代表铁氧体,标号205代表上轭铁,标号206代表下轭铁,标号207代表下表面腔,标号208代表与层压板201集成的不同类型陶瓷层压板,标号209代表散热片,标号210代表功率放大器IC芯片,标号211代表印刷板,标号212代表粘接接线,标号213代表GaAs开关IC芯片,标号214代表板埋入型条形线,标号215代表排热通孔,标号216代表缝隙。
如图2所示,设计板埋入型叠层隔离器202,使上轭铁205和下轭铁206经缝隙216夹住不同类形陶瓷层压板201的一部分。磁铁203插在上轭铁205与不同类型陶瓷层压板201的一个主面之间,铁氧体204插在下轭铁206与不同类型陶瓷层压板201的另一个主面之间。
在排热通孔215中设置位于中心的金属体217a和缓冲材料217b。缓冲材料217b设在金属体217a和排热通孔215之间,并与排热通孔215的内壁和金属体215的外壁接触。这就是说,在排热通孔215中填充具有金属体217a和缓冲材料217b这两层结构的传热体。在不同类型陶瓷层压板201上,传热体的一端直接连接到散热片209,因而能够传热,传热体的另一端暴露在不同类型陶瓷层压板201的另一个主面上。
在图2的结构中,重要的在于,散热片209和下轭铁206直接相连从而可以传热,散热片209和上轭铁及下轭铁一起用作散热器,从设置在散热片209上的功率放大器IC芯片210产生的热量经过与散热片209相连的传热体向模块的底部释放。在一般情况下,LTCC陶瓷板的热传导性不是很高,当LTCC用在PA模块板或传输模块板内时,这是一个最困难的问题。在本实施例中,通过上述结构能够很好地解决这个问题。
在板埋入型叠层隔离器202中,在位于不同类型陶瓷层压板201的上表面与下表面腔207之间的一个薄陶瓷层压板中形成一个交叉电极。铁氧体204嵌入下表面腔207中。另外,在插于上轭铁205与下轭铁206之间的不同类型陶瓷层压板208的靠近铁氧体204并且具有较大厚度的一个部分208a中,形成与所述交叉电极端部相连的电容器电极。此外,虽然本实施例描述了这样一种叠层隔离器的结构,但本实施例不一定限于上述结构。当隔离器与陶瓷板集成时,应能理解,这种隔离器和陶瓷板都在本发明的范围内。
进而,板埋入型叠层隔离器202和散热片209并不总是与不同类型陶瓷层压板201一起同时烘干。使用其中混合有树脂材料与陶瓷材料的复合材料。将这些材料结合成陶瓷层压板。在这种情况下,缝隙的内部、散热片的下表面或周围部分等都是通过这种复合材料结合在一起的。由于这种复合材料通常在大约150℃固化,所以能够防止由于散热片209和陶瓷板201的热膨胀差异造成的碎裂等现象。
进而,印刷板211只放在散热片209的一个部分上,并且通过来自包括功率放大器IC芯片210和GaAs开关IC芯片213在内的这些IC的粘接接线212等直接进行接线的粘结,因此能够防止引入不必要的寄生分量。另外,实行镀金操作,使印刷板211上的电极能够经受接线粘结。对于LTCC板,通常使用银作为电极的材料。当在印刷板211上进行接线粘结时,不必在LTCC上进行镀金操作,因而使成本降低。
接下去参照图4的分解透视图,补充说明本实施例的结构。图4简单地示出一种实例,但本发明不限于这种实例。图1和图2中未予述及的一点是缝隙216,预先形成所述缝隙216,使下轭铁206能够通过它。缝隙216部分形成在下轭铁206的外周边内侧,使板埋入型叠层隔离器202和陶瓷层压板201能够保持集成结构。因而,在板埋入型叠层隔离器202和陶瓷层压板201上形成的其它电路部分是通过它们的延续部分相互电连接的,从而可以防止引入不必要的寄生分量。
随后,参照附图3a-3c将更加具体地讨论排热通孔215和传热体的结构及制造步骤。
首先,作为一个制造步骤,如图3a所示,在用作陶瓷层压板201之基片的陶瓷制叠层坯片301上形成与排热通孔215对应的缝隙状通孔302,在作为第一预定温度的大约950℃下实行烘烤,从而得到陶瓷层压板201。作为烘烤方法,可以使用两种方法,一种是沿三维方向自由进行收缩的收缩烘烤,另一种是在一个平面方向不允许收缩的非收缩烘烤。另外,虽然对于陶瓷层压板的情况,要求烘烤坯片301的第一预定温度约为950℃,但是这个温度会随与坯片301一起烘烤的板埋入型条形线214等所用金属导体糊的不同而改变,而且任何温度都是可以接受的,只要这个温度等于或小于金属导体糊的熔点就行。例如,当所述的材料为铜时,所述第一预定温度约为1085℃。当该材料为银时,所述第一预定温度约为962℃。在本实施例中,由于使用银,所以将第一预定温度设定为950℃。简言之,任何温度都是可以接受的,只要能够获得本发明的陶瓷层基片就成。
接下去,如图3b所示,在烘烤陶瓷层压板201以后,将金属体303插入通孔302中,用复合材料304填充通孔302和金属体303之间的间隙,在作为第二预定温度的150℃下实行热固化,并把传热体放置在排热通孔215中。
作为金属体303,例如由银、铜、铝和铁等材料制成的薄板(或金属箔)是可以接受的。鉴于传热性,银、铜、或铝是首选的。然而,在与散热片209连接的情况下,具有小磁阻的铁是首选的。另外,为了减小高频电流的电阻,在薄板的表面上镀银或镀金也是有效的。
此外,作为用作本发明缓冲材料实例的复合材料304,比如,可以使用通过混合由环氧树脂制成的热固化树脂与由Al2O3、MgO等的粉末构成之无机填充物所形成的复合材料。如以上所述,这些复合材料的热固化温度约为150℃。除环氧树脂以外,作为热固化树脂,还可以使用酚醛树脂、氰酸盐树脂等。在这种情况下,热固化温度也是约150℃。简言之,可以使用任何温度作为所述第二预定温度,只要能获得本发明的缓冲材料就行。
在上述的步骤之后,如沿图3b中线A-A’所取剖面图的图3c所示,在陶瓷层压板201中形成具有金属体303和复合材料304的双重结构的传热体303。在图3c所示的实例中,暴露于板的主面的一部分传热体与半导体元件305直接相互连接,从而可以获得导热性。如图2所示,经过散热片209实现这种连接。
因为具有上述传热体的用于排放热量的通孔,能够防止由于在烘烤期间因陶瓷层压板与金属体之间热膨胀系数不同所引起的碎裂或裂缝,从而提高了效率。另外,还能获得陶瓷层压板与金属体的集成结构,从而可以获得具有优秀热释放性能的通孔。
此外,在上述实施例中,无线电通信设备的传输模块是本发明电子元件模块的一个实例,陶瓷层压板1和201是本发明电子元件安装板或者陶瓷层压板的一个实例。进而,GSM功率放大器IC11、DCS/PCS功率放大器IC12,以及SP5T GaAs开关IC是本发明功率放大器和电子元件的实例。而且,排热通孔18和215是本发明通孔的实例,金属体303是本发明金属体的实例,复合材料304是本发明缓冲材料的实例。
然而,本发明不限于上述实施例。本发明的电子元件可以不是功率放大器,或者可以不在高频段工作。而且,电子元件可以不是半导体元件。简言之,任何元件都是可以接受的,只要可以进行连接,以便利用传热体传递热量就行。
此外,复合材料用作本发明的缓冲材料,但是简单结构的材料也是可以接受的。简言之,材料不受它的组成限制,只要这种材料的传热性比空气高,能够提高传热体的热传导性,并且这种材料的热膨胀系数比金属体小或者弹性比金属体大,能够防止材料放在通孔内时陶瓷层压板碎裂就成。此外,上述说明的是将复合材料217b填充进通孔302与金属体303之间的间隙内。但本发明的缓冲材料不需要布置在整个间隙上,可以只在一部分间隙中提供。还有,虽然上面描述的是通孔是一个缝隙状的排热通孔,但其形状可以任意改变。
另外,在本发明具有通孔和传热体的电子元件安装板上,安装了相互连接以使与板埋入型叠层隔离器14一起传递热量的GSM功率放大器IC11和DCS/PCS功率放大器IC12。本发明的电子元件模块不限于板的结构,只要板埋入型叠层隔离器与功率放大器集成,使板的一部分包括在隔离器内就行。例如,可以使用没有通孔的普通陶瓷层压板和本发明的传热体。
此外,可以关于如图5所示无线电通信设备的传输侧和接收侧这两者使用本发明的电子元件模块,使用这种电子元件模块的无线电通信设备也包括在本发明中。此外,这种模块可以用于除通信设备以外的电子设备。
如上所述,按照本发明,能够获得热量排放性能优异并且生产率高的电子元件安装板及其制造方法,易于得到较小的尺寸和较低的成本,不用进行调节就能以很高的再现性实现所要的特性,并且可以抑制过大的负荷,从而实现了低功耗。
Claims (18)
1.一种电子元件安装板,包括具有至少一个从板的主面穿过其内部之通孔(18,215)的陶瓷层压板(1,201);
其中,在通孔内填充具有金属体(217a)和缓冲材料(217b)的传热体,在所述金属体和陶瓷层压板之间整个地或者部分地提供缓冲材料;并且
所述缓冲材料的传热性高于空气,以及缓冲材料的热膨胀系数小于金属体的。
2.一种电子元件安装板,包括具有至少一个从板的主面穿过其内部之通孔(18)的陶瓷层压板(1,201);
其中,在所述通孔内填充具有金属体(217a)和缓冲材料(217b)的传热体,在所述金属体和陶瓷层压板之间整个地或部分地提供缓冲材料;并且
所述缓冲材料的传热性高于空气的,以及缓冲材料的弹性大于金属体的。
3.根据权利要求1或2所述的电子元件安装板,其中,所述缓冲材料是包含至少一种热固化树脂的复合材料。
4.根据权利要求1或2所述的电子元件安装板,其中,所述陶瓷层压板是具有相同种类或者不同种类陶瓷层的层压板。
5.一种电子元件模块,包括:
权利要求1-4所述任一种电子元件安装板;和
安装在主面上的电子元件(11,12,210);
其中,以利用传热体传导热量的方式连接所述电子元件。
6.根据权利要求5所述的电子元件模块,其中,所述电子元件在高频段工作。
7.根据权利要求5或6所述的电子元件模块,其中,所述电子元件是功率放大器。
8.根据权利要求7所述的电子元件模块,其中,所述功率放大器包括化合物半导体功率放大器IC。
9.根据权利要求7所述的电子元件模块,其中,还包括安装在主面上的天线转换电路。
10.根据权利要求9所述的电子元件模块,其中,所述天线转换电路包括化合物半导体开关IC。
11.根据权利要求5所述的电子元件模块,其中,还包括设在所述叠层板内的叠层滤波器。
12.一种电子元件模块,包括:
权利要求1至4任一项所述的电子元件安装板(1,201);以及
功率放大器(11,12,210),它设置在所述板的主面上,并在高频段工作;
板埋入型叠层隔离器(14,202),它包括所述板的一部分,并以集成方式构成。
13.根据权利要求12所述的电子元件模块,其中,还包括散热片(209),所述散热片热连接到所述板埋入型叠层隔离器的轭铁(206)上;
以能够经过散热片利用轭铁传导热量的方式连接所述功率放大器。
14.根据权利要求13所述的电子元件模块,其中,所述板埋入型叠层隔离器是具有共享磁路和多个电路的多频段型叠层隔离器。
15.根据权利要求13所述的电子元件模块,其中,以能够利用传热体传导热量的方式连接所述散热片。
16.一种通信设备,包括:
传输装置;
接收装置;
其中,把权利要求5-15中任一项所述的电子元件模块用于传输装置和/或接收装置。
17.一种制造电子元件安装板的方法,其中,包括如下步骤:
在预定的坯片(301)上开至少一个通孔(302);
在第一预定温度下烘烤具有所开通孔的坯片,形成陶瓷层压板;
在所述通孔中填充金属体(303);
在所述金属体与通孔的内壁之间整个地或者部分地填充缓冲材料(304);
在使缓冲材料实行热固化的第二预定温度下加热陶瓷层压板,所述板具有在所述通孔内已填充的金属体和缓冲材料;
所述缓冲材料的传热性高于空气的,以及热膨胀系数小于金属体的。
18.一种制造电子元件安装板的方法,其中,包括如下步骤:
在预定的坯片(301)上开至少一个通孔(302);
在第一预定温度下烘烤具有所开的通孔的坯片,形成陶瓷层压板;
在所述通孔中填充金属体(303);
在所述金属体和通孔的内壁之间整个地或者部分地填充缓冲材料(304);
在使缓冲材料实行热固化的第二预定温度下加热陶瓷层压板,所述板具有在所述通孔内已填充的金属体和缓冲材料;
所述缓冲材料的传热性高于空气的,以及弹性大于金属体的。
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4185499B2 (ja) | 2005-02-18 | 2008-11-26 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
US7583506B1 (en) * | 2005-10-14 | 2009-09-01 | The Boeing Company | Multi operational system apparatus and method |
JP5120913B2 (ja) * | 2006-08-28 | 2013-01-16 | 国立大学法人東北大学 | 半導体装置および多層配線基板 |
US8138859B2 (en) * | 2008-04-21 | 2012-03-20 | Formfactor, Inc. | Switch for use in microelectromechanical systems (MEMS) and MEMS devices incorporating same |
WO2012093539A1 (ja) | 2011-01-06 | 2012-07-12 | 株式会社村田製作所 | 高周波モジュール |
US20180277395A1 (en) * | 2015-10-09 | 2018-09-27 | Hitachi Metals ,Ltd. | Method for manufacturing multilayer ceramic substrate |
CN106455298B (zh) * | 2016-10-31 | 2023-08-04 | 成都八九九科技股份有限公司 | 一种内置有磁片的微波电路复合基板 |
WO2018101112A1 (ja) * | 2016-11-30 | 2018-06-07 | 株式会社村田製作所 | 配線基板、カプラモジュール、及び通信装置 |
CN107222983B (zh) * | 2017-06-09 | 2019-05-03 | 深圳市景旺电子股份有限公司 | 一种内嵌AlN陶瓷绝缘散热模块的PCB板及制作方法 |
DE102019109200B4 (de) | 2019-04-08 | 2024-03-07 | Infineon Technologies Ag | Halbleitervorrichtungen mit nicht-galvanischer verbindung |
CN111180843B (zh) * | 2020-01-07 | 2021-11-02 | 中国电子科技集团公司第五十五研究所 | 一种mems微带环形器及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326761A (en) * | 1976-08-26 | 1978-03-13 | Babcock Hitachi Kk | Injecting device for reducing agent for nox |
US4509096A (en) * | 1983-02-22 | 1985-04-02 | Smiths Industries Public Limited Company | Chip-carrier substrates |
US4894271A (en) * | 1987-05-06 | 1990-01-16 | Mitsubishi Denki Kabushiki Kaisha | Metal-core printed wiring board and a process for manufacture thereof |
US5920458A (en) * | 1997-05-28 | 1999-07-06 | Lucent Technologies Inc. | Enhanced cooling of a heat dissipating circuit element |
WO2000054560A1 (en) * | 1999-03-09 | 2000-09-14 | Telefonaktiebolaget Lm Ericsson (Publ) | A method of producing printed circuit boards and a heat sink arrangement produced in accordance with the method |
US6297959B1 (en) * | 1998-12-07 | 2001-10-02 | Pioneer Corporation | Radiation structure for heating element |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5448167A (en) * | 1977-09-24 | 1979-04-16 | Nec Corp | High-density circuit package |
US5506755A (en) * | 1992-03-11 | 1996-04-09 | Kabushiki Kaisha Toshiba | Multi-layer substrate |
JPH10326961A (ja) | 1997-05-23 | 1998-12-08 | Hitachi Aic Inc | 配線基板のバンプ形成方法 |
JP2950290B2 (ja) * | 1997-06-27 | 1999-09-20 | 日本電気株式会社 | 高周波集積回路装置およびその製造方法 |
US6016005A (en) * | 1998-02-09 | 2000-01-18 | Cellarosi; Mario J. | Multilayer, high density micro circuit module and method of manufacturing same |
TW473882B (en) * | 1998-07-06 | 2002-01-21 | Hitachi Ltd | Semiconductor device |
TW424314B (en) * | 1999-07-09 | 2001-03-01 | Taiwan Semiconductor Mfg | Interconnection lines for improving thermal conductivity in integrated circuits and method for fabricating the same |
US6597259B1 (en) * | 2000-01-11 | 2003-07-22 | James Michael Peters | Selective laminated filter structures and antenna duplexer using same |
TW591978B (en) * | 2000-03-15 | 2004-06-11 | Matsushita Electric Ind Co Ltd | Laminated electronic components |
US6477054B1 (en) * | 2000-08-10 | 2002-11-05 | Tektronix, Inc. | Low temperature co-fired ceramic substrate structure having a capacitor and thermally conductive via |
US6462950B1 (en) * | 2000-11-29 | 2002-10-08 | Nokia Mobile Phones Ltd. | Stacked power amplifier module |
JP2002261643A (ja) * | 2001-02-28 | 2002-09-13 | Tdk Corp | 無線通信モジュール |
US6414847B1 (en) * | 2001-04-09 | 2002-07-02 | Agilent Technologies, Inc. | Integral dielectric heatspreader |
US7023301B2 (en) * | 2001-05-16 | 2006-04-04 | Matsushita Electric Industrial Co., Ltd. | Laminated filter with a single shield conductor, integrated device, and communication apparatus |
US6980439B2 (en) * | 2001-12-27 | 2005-12-27 | Intel Corporation | EMI shield for transceiver |
US6671176B1 (en) * | 2002-06-27 | 2003-12-30 | Eastman Kodak Company | Method of cooling heat-generating electrical components |
-
2003
- 2003-06-04 CN CNB031409237A patent/CN100352317C/zh not_active Expired - Fee Related
- 2003-06-06 EP EP03012908A patent/EP1369917B1/en not_active Expired - Lifetime
- 2003-06-09 US US10/457,247 patent/US7274570B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326761A (en) * | 1976-08-26 | 1978-03-13 | Babcock Hitachi Kk | Injecting device for reducing agent for nox |
US4509096A (en) * | 1983-02-22 | 1985-04-02 | Smiths Industries Public Limited Company | Chip-carrier substrates |
US4894271A (en) * | 1987-05-06 | 1990-01-16 | Mitsubishi Denki Kabushiki Kaisha | Metal-core printed wiring board and a process for manufacture thereof |
US5920458A (en) * | 1997-05-28 | 1999-07-06 | Lucent Technologies Inc. | Enhanced cooling of a heat dissipating circuit element |
US6297959B1 (en) * | 1998-12-07 | 2001-10-02 | Pioneer Corporation | Radiation structure for heating element |
WO2000054560A1 (en) * | 1999-03-09 | 2000-09-14 | Telefonaktiebolaget Lm Ericsson (Publ) | A method of producing printed circuit boards and a heat sink arrangement produced in accordance with the method |
Also Published As
Publication number | Publication date |
---|---|
US20040240183A1 (en) | 2004-12-02 |
EP1369917B1 (en) | 2011-08-03 |
US7274570B2 (en) | 2007-09-25 |
CN1468046A (zh) | 2004-01-14 |
EP1369917A2 (en) | 2003-12-10 |
EP1369917A3 (en) | 2006-09-27 |
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