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CH595881A5 - - Google Patents

Info

Publication number
CH595881A5
CH595881A5 CH1713874A CH1713874A CH595881A5 CH 595881 A5 CH595881 A5 CH 595881A5 CH 1713874 A CH1713874 A CH 1713874A CH 1713874 A CH1713874 A CH 1713874A CH 595881 A5 CH595881 A5 CH 595881A5
Authority
CH
Switzerland
Application number
CH1713874A
Inventor
Frederick Schmid
Original Assignee
Crystal Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Syst filed Critical Crystal Syst
Publication of CH595881A5 publication Critical patent/CH595881A5/xx

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D7/00—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
    • F28D7/10—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically
    • F28D7/12—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically the surrounding tube being closed at one end, e.g. return type
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0056—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for ovens or furnaces
    • F28D2021/0057—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for ovens or furnaces for melting materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
CH1713874A 1973-12-28 1974-12-20 CH595881A5 (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US429142A US3898051A (en) 1973-12-28 1973-12-28 Crystal growing

Publications (1)

Publication Number Publication Date
CH595881A5 true CH595881A5 (xx) 1978-02-28

Family

ID=23701973

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1713874A CH595881A5 (xx) 1973-12-28 1974-12-20

Country Status (7)

Country Link
US (1) US3898051A (xx)
JP (1) JPS5854115B2 (xx)
CA (1) CA1038268A (xx)
CH (1) CH595881A5 (xx)
DE (1) DE2461553C2 (xx)
FR (1) FR2255950B1 (xx)
GB (1) GB1463180A (xx)

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US4096025A (en) * 1974-02-21 1978-06-20 The United States Of America As Represented By The Secretary Of The Army Method of orienting seed crystals in a melt, and product obtained thereby
US4049384A (en) * 1975-04-14 1977-09-20 Arthur D. Little, Inc. Cold crucible system
US4186046A (en) * 1976-09-29 1980-01-29 The United States Of America As Represented By The Secretary Of The Army Growing doped single crystal ceramic materials
US4218418A (en) * 1978-06-22 1980-08-19 Crystal Systems, Inc. Processes of casting an ingot and making a silica container
US4251206A (en) * 1979-05-14 1981-02-17 Rca Corporation Apparatus for and method of supporting a crucible for EFG growth of sapphire
US4264406A (en) * 1979-06-11 1981-04-28 The United States Of America As Represented By The Secretary Of The Army Method for growing crystals
FR2512846A1 (fr) * 1981-09-16 1983-03-18 Labo Electronique Physique Procede pour la croissance cristalline de materiau, et cristaux ainsi obtenus
JPS6041033B2 (ja) * 1982-06-24 1985-09-13 財団法人 半導体研究振興会 結晶成長装置
US4540550A (en) * 1982-10-29 1985-09-10 Westinghouse Electric Corp. Apparatus for growing crystals
DE3323896A1 (de) * 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum gerichteten erstarren von schmelzen
US4892707A (en) * 1983-07-25 1990-01-09 American Cyanamid Company Apparatus for the calorimetry of chemical processes
US4963499A (en) * 1983-07-25 1990-10-16 American Cyanamid Company Method for the calorimetry of chemical processes
FR2553232B1 (fr) * 1983-10-05 1985-12-27 Comp Generale Electricite Procede et dispositif pour elaborer un lingot d'un materiau semi-conducteur polycristallin
JPS6163593A (ja) * 1984-09-05 1986-04-01 Toshiba Corp 化合物半導体単結晶の製造装置
DE3644746A1 (de) * 1986-12-30 1988-07-14 Hagen Hans Dr Ing Verfahren und vorrichtung zum zuechten von kristallen
FR2614404B1 (fr) * 1987-04-23 1989-06-09 Snecma Four de coulee de pieces a structure orientee, a ecran thermique deplacable
US4840699A (en) * 1987-06-12 1989-06-20 Ghemini Technologies Gallium arsenide crystal growth
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
WO1990003952A1 (en) * 1988-10-07 1990-04-19 Crystal Systems, Inc. Method of growing silicon ingots using a rotating melt
US4946544A (en) * 1989-02-27 1990-08-07 At&T Bell Laboratories Crystal growth method
US5047113A (en) * 1989-08-23 1991-09-10 Aleksandar Ostrogorsky Method for directional solidification of single crystals
US5064497A (en) * 1990-03-09 1991-11-12 At&T Bell Laboratories Crystal growth method and apparatus
EP0913505B1 (en) * 1991-08-22 2006-04-12 Raytheon Company Method of removing B2O3 encapsulant from a structure
US5410567A (en) * 1992-03-05 1995-04-25 Corning Incorporated Optical fiber draw furnace
US5653954A (en) * 1995-06-07 1997-08-05 Thermometrics, Inc. Nickel-manganese oxide single crystals
US5830268A (en) * 1995-06-07 1998-11-03 Thermometrics, Inc. Methods of growing nickel-manganese oxide single crystals
US6099164A (en) * 1995-06-07 2000-08-08 Thermometrics, Inc. Sensors incorporating nickel-manganese oxide single crystals
JP3242292B2 (ja) * 1995-06-15 2001-12-25 シャープ株式会社 多結晶半導体の製造方法および製造装置
JP3388664B2 (ja) * 1995-12-28 2003-03-24 シャープ株式会社 多結晶半導体の製造方法および製造装置
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
DE29715846U1 (de) * 1997-09-04 1997-12-11 ALD Vacuum Technologies GmbH, 63526 Erlensee Vorrichtung zum gerichteten Erstarren von Schmelzen
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
KR20020096097A (ko) * 2001-06-16 2002-12-31 주식회사 실트론 실리콘 잉곳 성장 장치
US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
JP4658453B2 (ja) * 2002-11-14 2011-03-23 ヘムロック・セミコンダクター・コーポレーション 流動性チップ、それを製造する方法及び使用する方法並びにその方法の実施に用いる装置
JP4151474B2 (ja) * 2003-05-13 2008-09-17 信越半導体株式会社 単結晶の製造方法及び単結晶
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
JP5198731B2 (ja) * 2004-01-29 2013-05-15 京セラ株式会社 シリコンインゴット製造用鋳型及びその形成方法、並びにその鋳型を用いた多結晶シリコン基板の製造方法
IL162518A0 (en) * 2004-06-14 2005-11-20 Rafael Armament Dev Authority Dome
KR100850786B1 (ko) * 2004-11-16 2008-08-06 니폰덴신뎅와 가부시키가이샤 결정 제조장치
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
US7344596B2 (en) * 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
WO2007084934A2 (en) 2006-01-20 2007-07-26 Bp Corporation North America Inc. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
FR2918675B1 (fr) * 2007-07-10 2009-08-28 Commissariat Energie Atomique Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique.
WO2009014957A2 (en) * 2007-07-20 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing cast silicon from seed crystals
JP5380442B2 (ja) * 2007-07-20 2014-01-08 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション 種結晶から鋳造シリコンを製造するための方法および装置
WO2009015168A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing geometric multi-crystalline cast materials
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
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US20100101387A1 (en) * 2008-10-24 2010-04-29 Kedar Prasad Gupta Crystal growing system and method thereof
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CN103205799A (zh) * 2013-04-23 2013-07-17 广东赛翡蓝宝石科技有限公司 一种生长c向白宝石单晶体的方法
US10633759B2 (en) 2013-09-30 2020-04-28 Gtat Corporation Technique for controlling temperature uniformity in crystal growth apparatus
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CN104250852B (zh) * 2014-09-17 2016-09-14 哈尔滨化兴软控科技有限公司 蓝宝石晶体生长装置及生长方法
CN108700378B (zh) * 2016-02-26 2019-11-15 联合材料公司 钼坩锅
CN206562482U (zh) * 2017-01-13 2017-10-17 许昌天戈硅业科技有限公司 一种蓝宝石长晶炉的分级闭环控制冷却设备
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CN114737253B (zh) * 2022-06-10 2022-11-04 太原彩源新材料科技有限公司 生长大尺寸蓝宝石单晶板材的单晶炉热场结构及方法

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US3335084A (en) * 1964-03-16 1967-08-08 Gen Electric Method for producing homogeneous crystals of mixed semiconductive materials
BE684801A (xx) * 1965-08-05 1967-01-03
US3464812A (en) * 1966-03-29 1969-09-02 Massachusetts Inst Technology Process for making solids and products thereof
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US3653432A (en) * 1970-09-01 1972-04-04 Us Army Apparatus and method for unidirectionally solidifying high temperature material

Also Published As

Publication number Publication date
FR2255950A1 (xx) 1975-07-25
DE2461553C2 (de) 1986-04-24
US3898051A (en) 1975-08-05
CA1038268A (en) 1978-09-12
DE2461553A1 (de) 1975-07-10
FR2255950B1 (xx) 1980-12-26
GB1463180A (en) 1977-02-02
JPS5097587A (xx) 1975-08-02
JPS5854115B2 (ja) 1983-12-02

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