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CH389781A - Verfahren zur Herstellung von Halbleiteranordnungen - Google Patents

Verfahren zur Herstellung von Halbleiteranordnungen

Info

Publication number
CH389781A
CH389781A CH535060A CH535060A CH389781A CH 389781 A CH389781 A CH 389781A CH 535060 A CH535060 A CH 535060A CH 535060 A CH535060 A CH 535060A CH 389781 A CH389781 A CH 389781A
Authority
CH
Switzerland
Prior art keywords
production
semiconductor devices
semiconductor
devices
Prior art date
Application number
CH535060A
Other languages
English (en)
Inventor
Kurt Dr Raithel
Reimer Dipl Phys Emeis
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH389781A publication Critical patent/CH389781A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B63SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
    • B63HMARINE PROPULSION OR STEERING
    • B63H11/00Marine propulsion by water jets
    • B63H11/02Marine propulsion by water jets the propulsive medium being ambient water
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B63SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
    • B63HMARINE PROPULSION OR STEERING
    • B63H11/00Marine propulsion by water jets
    • B63H11/02Marine propulsion by water jets the propulsive medium being ambient water
    • B63H11/04Marine propulsion by water jets the propulsive medium being ambient water by means of pumps
    • B63H11/08Marine propulsion by water jets the propulsive medium being ambient water by means of pumps of rotary type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • Ocean & Marine Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
CH535060A 1959-05-29 1960-05-10 Verfahren zur Herstellung von Halbleiteranordnungen CH389781A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES63187A DE1148661B (de) 1959-05-29 1959-05-29 Verfahren zur Herstellung von Halbleiteranordnungen mit einlegiertem pn-UEbergang

Publications (1)

Publication Number Publication Date
CH389781A true CH389781A (de) 1965-03-31

Family

ID=7496195

Family Applications (1)

Application Number Title Priority Date Filing Date
CH535060A CH389781A (de) 1959-05-29 1960-05-10 Verfahren zur Herstellung von Halbleiteranordnungen

Country Status (4)

Country Link
CH (1) CH389781A (de)
DE (1) DE1148661B (de)
GB (1) GB937497A (de)
NL (1) NL250885A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1266404C2 (de) * 1964-12-01 1968-11-07 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1109535A (fr) * 1954-07-30 1956-01-30 Csf Perfectionnements aux procédés de fabrication des jonctions nu-p

Also Published As

Publication number Publication date
NL250885A (de)
DE1148661B (de) 1963-05-16
GB937497A (en) 1963-09-25

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