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CA2326228C - Regulateur de temperature pour un substrat dans les processus de depot par evaporation sous vide - Google Patents

Regulateur de temperature pour un substrat dans les processus de depot par evaporation sous vide Download PDF

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Publication number
CA2326228C
CA2326228C CA 2326228 CA2326228A CA2326228C CA 2326228 C CA2326228 C CA 2326228C CA 2326228 CA2326228 CA 2326228 CA 2326228 A CA2326228 A CA 2326228A CA 2326228 C CA2326228 C CA 2326228C
Authority
CA
Canada
Prior art keywords
heat transfer
substrate
component
mixture
transfer regulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA 2326228
Other languages
English (en)
Other versions
CA2326228A1 (fr
Inventor
Vladimir I. Gorokhovsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
G&H Technologies LLC
Original Assignee
G&H Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by G&H Technologies LLC filed Critical G&H Technologies LLC
Publication of CA2326228A1 publication Critical patent/CA2326228A1/fr
Application granted granted Critical
Publication of CA2326228C publication Critical patent/CA2326228C/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thermistors And Varistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)
CA 2326228 1999-11-19 2000-11-17 Regulateur de temperature pour un substrat dans les processus de depot par evaporation sous vide Expired - Lifetime CA2326228C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16769699P 1999-11-19 1999-11-19
US60/167,696 1999-11-19

Publications (2)

Publication Number Publication Date
CA2326228A1 CA2326228A1 (fr) 2001-05-19
CA2326228C true CA2326228C (fr) 2004-11-16

Family

ID=22608434

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2326228 Expired - Lifetime CA2326228C (fr) 1999-11-19 2000-11-17 Regulateur de temperature pour un substrat dans les processus de depot par evaporation sous vide

Country Status (3)

Country Link
AU (1) AU7169100A (fr)
CA (1) CA2326228C (fr)
GB (1) GB2356637B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6871700B2 (en) * 2000-11-17 2005-03-29 G & H Technologies Llc Thermal flux regulator
DE10341020B4 (de) * 2003-09-03 2005-12-08 Eads Deutschland Gmbh Verfahren zum Innenbeschichten von Hohlkörpern
CN107513636B (zh) * 2017-09-12 2019-01-04 江西理工大学 液液掺杂Al2O3－TiC铜基复合材料及其制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985513A (en) * 1975-06-02 1976-10-12 Alexandr Fedorovich Silaev Nickel-base metal-ceramic heat-resistant sealing material
US4100524A (en) * 1976-05-06 1978-07-11 Gould Inc. Electrical transducer and method of making
FR2455632B1 (fr) * 1979-03-29 1986-04-25 Sumitomo Electric Industries Bloc fritte, notamment pour outil d'usinage
DE3130920A1 (de) * 1980-09-04 1982-04-01 General Electric Co., Schenectady, N.Y. "ausscheidungsverfestigte kupferlegierungen"
JPS6029443A (ja) * 1983-07-28 1985-02-14 Kyocera Corp 装飾用金色焼結合金
JPH0621314B2 (ja) * 1985-12-28 1994-03-23 住友電気工業株式会社 高硬度工具用焼結体およびその製造方法
US4983212A (en) * 1987-10-26 1991-01-08 Hitachi Metals, Ltd. Cermet alloys and composite mechanical parts made by employing them
US5051231A (en) * 1989-09-20 1991-09-24 Agency Of Industrial Science & Technology Method for fabrication of superplastic composite material having metallic aluminum reinforced with silicon nitride
JP3298634B2 (ja) * 1990-02-27 2002-07-02 大豊工業株式会社 摺動材料
DE69216156T2 (de) * 1991-06-27 1997-07-03 Kyocera Corp Goldfarbige gesinterte Legierung
US5925197A (en) * 1992-01-24 1999-07-20 Sandvik Ab Hard alloys for tools in the wood industry
US5342571A (en) * 1992-02-19 1994-08-30 Tosoh Smd, Inc. Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets
GB2267912A (en) * 1992-06-15 1993-12-22 Secr Defence Metal matrix for composite materials
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5766365A (en) * 1994-02-23 1998-06-16 Applied Materials, Inc. Removable ring for controlling edge deposition in substrate processing apparatus
JP2866917B2 (ja) * 1994-10-05 1999-03-08 工業技術院長 溶湯攪拌法によるセラミックス粒子強化マグネシウム基複合材料に対する超塑性発現法
GB2318803B (en) * 1994-11-21 1998-07-08 Baker Hughes Inc Improved hardfacing composition for earth-boring bits
US5552232A (en) * 1994-12-21 1996-09-03 International Business Machines Corporation Aluminum nitride body having graded metallurgy
US5948495A (en) * 1996-07-01 1999-09-07 Alyn Corporation Ceramic-metal matrix composites for magnetic disk substrates for hard disk drives
JP3347742B2 (ja) * 1997-01-02 2002-11-20 シーヴイシー・プロダクツ・インコーポレーテッド 真空処理装置のための熱伝導性チャック、熱伝達装置及びチャック本体と基材との間で熱を伝達させる方法
GB9711876D0 (en) * 1997-06-10 1997-08-06 Secr Defence Dispersion-strengthened aluminium alloy

Also Published As

Publication number Publication date
GB2356637A (en) 2001-05-30
GB2356637B (en) 2004-04-28
AU7169100A (en) 2001-05-24
CA2326228A1 (fr) 2001-05-19
GB0028204D0 (en) 2001-01-03

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Effective date: 20201117