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BRPI0822313A2 - célula solar tendo homojunção p-n de silício cristalino e heterojunções de silício amorfo para apassivação de superfície - Google Patents

célula solar tendo homojunção p-n de silício cristalino e heterojunções de silício amorfo para apassivação de superfície

Info

Publication number
BRPI0822313A2
BRPI0822313A2 BRPI0822313A BRPI0822313A BRPI0822313A2 BR PI0822313 A2 BRPI0822313 A2 BR PI0822313A2 BR PI0822313 A BRPI0822313 A BR PI0822313A BR PI0822313 A BRPI0822313 A BR PI0822313A BR PI0822313 A2 BRPI0822313 A2 BR PI0822313A2
Authority
BR
Brazil
Prior art keywords
solar cell
silicon
surface passivation
homojunction
amorphous silicon
Prior art date
Application number
BRPI0822313A
Other languages
English (en)
Inventor
Rohatgi Ajeet
L Meier Daniel
Original Assignee
Suniva Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suniva Inc filed Critical Suniva Inc
Publication of BRPI0822313A2 publication Critical patent/BRPI0822313A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

célula solar tendo homojunção p-n de silício cristalino e heterojunções de silício amorfo para apassivação de superfície. a presente invenção refere-se a uma célula solar de silício fina, que é descrita. especificamente, a célula solar pode ser fabricada de um wafer de silício cristalino tendo uma espessura de aproximadamente 50 mi-crometros a 500 micrometros. a célula solar compreende uma primeira regi-ão tendo uma homojunção p-n, uma segunda região que cria apassivação de superfície de heterojunção, e uma terceira região que cria apassivação de superfície de heterojunção. camadas de silício amorfo são depositadas so-bre ambos os lados do wafer de silício em temperaturas abaixo de aproxi-madamente 400 graus celsius para reduzir a perda de propriedades de a-passivação do silício amorfo. uma camada final de óxido condutor transparente é formada sobre ambos os lados em aproximadamente 165 graus cel- sius. contatos de metal são aplicados ao óxido condutor transparente. as baixas temperaturas e camadas de materiais muito finas usadas para fabri-cação de camadas externas da células solar protegem o wafer fino de ex-cessiva tensão que pode conduzir a deformação do wafer.
BRPI0822313A 2008-02-25 2008-06-11 célula solar tendo homojunção p-n de silício cristalino e heterojunções de silício amorfo para apassivação de superfície BRPI0822313A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/036,766 US20090211627A1 (en) 2008-02-25 2008-02-25 Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
PCT/US2008/007356 WO2009108162A1 (en) 2008-02-25 2008-06-11 Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation

Publications (1)

Publication Number Publication Date
BRPI0822313A2 true BRPI0822313A2 (pt) 2019-02-26

Family

ID=40380731

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0822313A BRPI0822313A2 (pt) 2008-02-25 2008-06-11 célula solar tendo homojunção p-n de silício cristalino e heterojunções de silício amorfo para apassivação de superfície

Country Status (9)

Country Link
US (1) US20090211627A1 (pt)
EP (2) EP2228834B1 (pt)
JP (1) JP5307818B2 (pt)
CN (1) CN102017188B (pt)
BR (1) BRPI0822313A2 (pt)
CA (2) CA2906462A1 (pt)
MX (1) MX2010009367A (pt)
TW (1) TWI414074B (pt)
WO (1) WO2009108162A1 (pt)

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Also Published As

Publication number Publication date
JP2010538492A (ja) 2010-12-09
EP2215665A1 (en) 2010-08-11
EP2228834B1 (en) 2014-01-15
EP2215665B1 (en) 2014-01-15
CN102017188A (zh) 2011-04-13
WO2009108162A1 (en) 2009-09-03
US20090211627A1 (en) 2009-08-27
CN102017188B (zh) 2015-07-22
CA2716402C (en) 2015-12-08
EP2228834A2 (en) 2010-09-15
EP2228834A3 (en) 2011-06-15
TWI414074B (zh) 2013-11-01
MX2010009367A (es) 2011-03-04
TW200937659A (en) 2009-09-01
CA2906462A1 (en) 2009-09-03
JP5307818B2 (ja) 2013-10-02
CA2716402A1 (en) 2009-09-03

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