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BE575275A - - Google Patents

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Publication number
BE575275A
BE575275A BE575275DA BE575275A BE 575275 A BE575275 A BE 575275A BE 575275D A BE575275D A BE 575275DA BE 575275 A BE575275 A BE 575275A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE575275A publication Critical patent/BE575275A/xx

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10161—Shape being a cuboid with a rectangular active surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/923—Physical dimension
    • Y10S428/924—Composite
    • Y10S428/926—Thickness of individual layer specified
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/929—Electrical contact feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49204—Contact or terminal manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12896—Ag-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
BE575275D 1958-02-03 BE575275A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US712804A US3028663A (en) 1958-02-03 1958-02-03 Method for applying a gold-silver contact onto silicon and germanium semiconductors and article

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BE575275A true BE575275A (fr) 1900-01-01

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US (1) US3028663A (fr)
BE (1) BE575275A (fr)
DE (1) DE1127488B (fr)
FR (1) FR1226492A (fr)
GB (1) GB911667A (fr)
NL (1) NL235742A (fr)

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DE1172378B (de) * 1961-07-14 1964-06-18 Siemens Ag Verfahren zur Herstellung einer elektrisch unsymmetrisch leitenden Halbleiteranordnung
DE1236081B (de) * 1963-02-06 1967-03-09 Itt Ind Ges Mit Beschraenkter Verfahren zur Herstellung von ohmschen Kontakten an Halbleiterbauelementen

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US3108209A (en) * 1959-05-21 1963-10-22 Motorola Inc Transistor device and method of manufacture
GB930091A (en) * 1960-06-24 1963-07-03 Mond Nickel Co Ltd Improvements relating to the production of semi-conductor devices
US3158504A (en) * 1960-10-07 1964-11-24 Texas Instruments Inc Method of alloying an ohmic contact to a semiconductor
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DE1131811B (de) * 1961-05-17 1962-06-20 Intermetall Verfahren zum sperrfreien Kontaktieren des Kollektors von Germanium-Transistoren
FR1306701A (fr) * 1961-09-04 1962-10-19 Electronique & Automatisme Sa Perfectionnements aux potentiomètres
DE1174912B (de) * 1962-01-09 1964-07-30 Bosch Gmbh Robert Verfahren zum Behandeln von Einschmelz-draehten fuer Elektronenroehren
DE1251871B (fr) * 1962-02-06 1900-01-01
US3266137A (en) * 1962-06-07 1966-08-16 Hughes Aircraft Co Metal ball connection to crystals
NL296608A (fr) * 1962-08-15
US3271636A (en) * 1962-10-23 1966-09-06 Bell Telephone Labor Inc Gallium arsenide semiconductor diode and method
US3349476A (en) * 1963-11-26 1967-10-31 Ibm Formation of large area contacts to semiconductor devices
GB1025453A (en) * 1964-01-29 1966-04-06 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
US3361592A (en) * 1964-03-16 1968-01-02 Hughes Aircraft Co Semiconductor device manufacture
US3268309A (en) * 1964-03-30 1966-08-23 Gen Electric Semiconductor contact means
US3290570A (en) * 1964-04-28 1966-12-06 Texas Instruments Inc Multilevel expanded metallic contacts for semiconductor devices
US3325704A (en) * 1964-07-31 1967-06-13 Texas Instruments Inc High frequency coaxial transistor package
DE1274735B (de) * 1964-08-21 1968-08-08 Ibm Deutschland Verfahren zum Herstellen von Legierungskontakten an Halbleiterkoerpern
DE1514806B1 (de) * 1965-04-10 1970-04-23 Telefunken Patent Verfahren zur Herstellung einer sperrenden oder nichtsperrenden Elektrode an einem Halbleiterkoerper sowie einer diese Elektrode kontaktierenden Leitbahn
US3733685A (en) * 1968-11-25 1973-05-22 Gen Motors Corp Method of making a passivated wire bonded semiconductor device
US3751293A (en) * 1969-04-04 1973-08-07 Bell Telephone Labor Inc Method for reducing interdiffusion rates between thin film components
US3654694A (en) * 1969-04-28 1972-04-11 Hughes Aircraft Co Method for bonding contacts to and forming alloy sites on silicone carbide
US3869260A (en) * 1971-08-04 1975-03-04 Ferranti Ltd Manufacture of supports for use with semiconductor devices
JPS59213145A (ja) * 1983-05-18 1984-12-03 Toshiba Corp 半導体装置及びその製造方法
US4702941A (en) * 1984-03-27 1987-10-27 Motorola Inc. Gold metallization process
US4822641A (en) * 1985-04-30 1989-04-18 Inovan Gmbh & Co. Kg Method of manufacturing a contact construction material structure
US4753897A (en) * 1986-03-14 1988-06-28 Motorola Inc. Method for providing contact separation in silicided devices using false gate
US4998158A (en) * 1987-06-01 1991-03-05 Motorola, Inc. Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier
RU2564685C1 (ru) * 2014-08-25 2015-10-10 Олег Петрович Ксенофонтов Способ сплавления

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US2531660A (en) * 1949-08-27 1950-11-28 Bell Telephone Labor Inc Fabrication of piezoelectric crystal units
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2782492A (en) * 1954-02-11 1957-02-26 Atlas Powder Co Method of bonding fine wires to copper or copper alloys
BE540780A (fr) * 1954-08-26 1900-01-01
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1172378B (de) * 1961-07-14 1964-06-18 Siemens Ag Verfahren zur Herstellung einer elektrisch unsymmetrisch leitenden Halbleiteranordnung
DE1236081B (de) * 1963-02-06 1967-03-09 Itt Ind Ges Mit Beschraenkter Verfahren zur Herstellung von ohmschen Kontakten an Halbleiterbauelementen

Also Published As

Publication number Publication date
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GB911667A (en) 1962-11-28
DE1127488B (de) 1962-04-12
FR1226492A (fr) 1960-07-13
US3028663A (en) 1962-04-10

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