AU2001293910A1 - Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix - Google Patents

Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix

Info

Publication number: AU2001293910A1
Authority: AU; Australia
Prior art keywords: optical sensor; matrix; semiconductor layer; photosensitive semiconductor; active matrix
Prior art date: 2000-09-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2001293910A

Other languages

English (en)

Inventor

Eric Sanson

Nicolas Szydlo

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Thales Avionics LCD SA

Original Assignee

Thales Avionics LCD SA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-09-19

Filing date

2001-09-18

Publication date

2002-04-02

2001-09-18 Application filed by Thales Avionics LCD SA filed Critical Thales Avionics LCD SA

2002-04-02 Publication of AU2001293910A1 publication Critical patent/AU2001293910A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

AU2001293910A 2000-09-19 2001-09-18 Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix Abandoned AU2001293910A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
FR0011927		2000-09-19
FR0011927A FR2814281B1 (fr)	2000-09-19	2000-09-19	Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice
PCT/FR2001/002900 WO2002025699A2 (fr)	2000-09-19	2001-09-18	Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice

Publications (1)

Publication Number	Publication Date
AU2001293910A1 true AU2001293910A1 (en)	2002-04-02

Family

ID=8854450

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2001293910A Abandoned AU2001293910A1 (en)	2000-09-19	2001-09-18	Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix

Country Status (7)

Country	Link
US (1)	US6815716B2 (fr)
EP (1)	EP1332519B1 (fr)
JP (1)	JP2004510328A (fr)
AU (1)	AU2001293910A1 (fr)
DE (1)	DE60121785T2 (fr)
FR (1)	FR2814281B1 (fr)
WO (1)	WO2002025699A2 (fr)

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US9176604B2 (en)	2012-07-27	2015-11-03	Apple Inc.	Stylus device
US10048775B2 (en)	2013-03-14	2018-08-14	Apple Inc.	Stylus detection and demodulation
US10845901B2 (en)	2013-07-31	2020-11-24	Apple Inc.	Touch controller architecture
US10067618B2 (en)	2014-12-04	2018-09-04	Apple Inc.	Coarse scan and targeted active mode scan for touch
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FR2681737A1 (fr) *	1991-09-24	1993-03-26	Thomson Csf	Source monofrequence de puissance a fibre optique.
FR2681738B1 (fr) *	1991-09-24	1993-11-05	Thomson Csf	Lasers de puissance a filtre semiconducteur.
FR2686431A1 (fr) *	1992-01-21	1993-07-23	Thomson Csf	Doubleur de frequence optique utilisant des structures quantiques semiconductrices.
FR2715776B1 (fr) *	1994-01-28	1996-03-01	Thomson Csf Semiconducteurs	Laser de grande puissance à deux étages.
FR2739732B1 (fr) *	1995-10-06	1997-10-31	Thomson Csf	Dispositif d'amplification optique
FR2749721B1 (fr) *	1996-06-07	1998-11-27	Thomson Csf	Commutateur electrique a photoconducteur
US5770871A (en) *	1996-06-20	1998-06-23	Xerox Corporation	Sensor array with anticoupling layer between data lines and charge collection electrodes
US6323490B1 (en) *	1998-03-20	2001-11-27	Kabushiki Kaisha Toshiba	X-ray semiconductor detector
JP3447947B2 (ja) *	1998-03-20	2003-09-16	株式会社東芝	Ｘ線撮像装置
FR2784185B1 (fr) *	1998-10-06	2001-02-02	Thomson Csf	Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
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FR2814281B1 (fr) *	2000-09-19	2003-08-29	Thomson Lcd	Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice

2000
- 2000-09-19 FR FR0011927A patent/FR2814281B1/fr not_active Expired - Fee Related
2001
- 2001-09-18 US US10/380,757 patent/US6815716B2/en not_active Expired - Fee Related
- 2001-09-18 JP JP2002529812A patent/JP2004510328A/ja active Pending
- 2001-09-18 AU AU2001293910A patent/AU2001293910A1/en not_active Abandoned
- 2001-09-18 EP EP01974379A patent/EP1332519B1/fr not_active Expired - Lifetime
- 2001-09-18 DE DE60121785T patent/DE60121785T2/de not_active Expired - Fee Related
- 2001-09-18 WO PCT/FR2001/002900 patent/WO2002025699A2/fr active IP Right Grant

Also Published As

Publication number	Publication date
JP2004510328A (ja)	2004-04-02
FR2814281A1 (fr)	2002-03-22
US20040036092A1 (en)	2004-02-26
FR2814281B1 (fr)	2003-08-29
DE60121785T2 (de)	2007-10-18
DE60121785D1 (de)	2006-09-07
EP1332519B1 (fr)	2006-07-26
WO2002025699A3 (fr)	2002-05-16
WO2002025699A2 (fr)	2002-03-28
US6815716B2 (en)	2004-11-09
EP1332519A2 (fr)	2003-08-06

Publication	Publication Date	Title
AU2001293910A1 (en)	2002-04-02	Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix
AU2725001A (en)	2001-06-04	Optical sensors and arrays containing thin film electroluminescent devices
EP0996176B8 (fr)	2005-10-19	Méthode de fabrication d'un dispositif d'affichage émetteur de lumière à matrice active
AU1609601A (en)	2001-06-04	Organic photosensitive optoelectronic device with an exciton blocking layer
AU2003245050A1 (en)	2004-02-02	Thin film phototransistor, active matrix substrate using the phototransistor, and image scanning device using the substrate
AU2002366887A1 (en)	2003-07-09	Active matrix electroluminescent display device
AU6875000A (en)	2001-04-17	Exposure device with laser device
AU2002230068A1 (en)	2002-08-19	Multiple layer optical storage device
AU6875200A (en)	2001-04-17	Exposure device with laser device
AU6436200A (en)	2001-02-19	Active film for chip cards with a display
DE60139971D1 (de)	2009-11-05	Mehrformat-Anzeigevorrichtung mit aktiver Matrix
AU2002359978A1 (en)	2004-02-09	Active matrix display device
AU2001284456A1 (en)	2002-03-22	Substrate transporting device
EP1152294A3 (fr)	2003-09-17	Matériau photosensible pour l'enregistrement d'images
AU2544900A (en)	2000-08-18	Method for fabricating thin film semiconductor devices
AU2002214269A1 (en)	2002-05-21	Optical device, exposure device and device manufacturing method
AU3852900A (en)	2001-04-17	Protective layer for a semiconductor device
EP1215780A3 (fr)	2004-09-22	Dispositif optique à semi-conducteur
AU2002353328A1 (en)	2003-07-09	Active matrix electroluminescent display device
AU1383501A (en)	2001-03-26	Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device
EP1189195A3 (fr)	2004-03-31	Dispositif d'affichage à matrice active
AU2002258511A1 (en)	2002-09-24	Active doped unitary optical amplifier
EP1205787A3 (fr)	2004-03-31	Dispositif d'affichage à matrice active
AU2383301A (en)	2001-07-16	Thin film transistor
AU2003214584A1 (en)	2003-11-10	Active matrix display device